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Journal articles on the topic 'Deep level transient spectroscopy'

Author: Grafiati

Published: 4 June 2021

Last updated: 6 September 2023

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1

Okumura, Tsugunori. "DLTS: Deep Level Transient Spectroscopy." HYBRIDS 7, no. 5 (1991): 29–36. http://dx.doi.org/10.5104/jiep1985.7.5_29.

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2

Garcia-Perez, F., F. J. Sanchez, and F. Sandoval. "Deep Level Transient Spectroscopy System." IFAC Proceedings Volumes 22, no. 18 (1989): 285–90. http://dx.doi.org/10.1016/s1474-6670(17)52855-4.

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3

Fourches, N. "Deep level transient spectroscopy based on conductance transients." Applied Physics Letters 58, no. 4 (1991): 364–66. http://dx.doi.org/10.1063/1.104635.

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4

Kamyczek, Paulina, Ewa Placzek-Popko, Eunika Zielony, and Zbigniew Zytkiewicz. "Deep levels in GaN studied by deep level transient spectroscopy and Laplace transform deep-level spectroscopy." Materials Science-Poland 31, no. 4 (2013): 572–76. http://dx.doi.org/10.2478/s13536-013-0138-0.

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5

Henry, P. M., J. M. Meese, J. W. Farmer, and C. D. Lamp. "Frequency‐scanned deep‐level transient spectroscopy." Journal of Applied Physics 57, no. 2 (1985): 628–30. http://dx.doi.org/10.1063/1.334753.

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6

Laird, J. S., R. A. Bardos, C. Jagadish, D. N. Jamieson, and G. J. F. Legge. "Scanning ion deep level transient spectroscopy." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 158, no. 1-4 (1999): 464–69. http://dx.doi.org/10.1016/s0168-583x(99)00329-8.

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7

Manion, S. J., G. Costrini, M. A. Emanuel, J. J. Coleman, and K. Hess. "Hot electron deep level transient spectroscopy." Superlattices and Microstructures 1, no. 6 (1985): 481–83. http://dx.doi.org/10.1016/s0749-6036(85)80018-5.

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8

Su, Z., and J. W. Farmer. "Single scan deep‐level transient spectroscopy." Journal of Applied Physics 68, no. 8 (1990): 4068–70. http://dx.doi.org/10.1063/1.346244.

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9

Breitenstein, O., and J. Heydenreich. "Scanning deep level transient spectroscopy (SDLTS)." Scanning 7, no. 6 (1985): 273–89. http://dx.doi.org/10.1002/sca.4950070602.

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10

Scheffler, L., Vl Kolkovsky, and J. Weber. "Isolated Ti in Si: Deep level transient spectroscopy, minority carrier transient spectroscopy, and high-resolution Laplace deep level transient spectroscopy studies." Journal of Applied Physics 117, no. 4 (2015): 045713. http://dx.doi.org/10.1063/1.4906855.

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11

Calleja, Enrique, and Ignacio Izpura. "Deep Level Transient Spectroscopy of DX Centers." Defect and Diffusion Forum 108 (February 1994): 75–96. http://dx.doi.org/10.4028/www.scientific.net/ddf.108.75.

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12

Giakoumakis, G. E., E. K. Evangelou, and N. G. Alexandropoulos. "Deep Level Transient Spectroscopy techniques and systems." Acta Physica Hungarica 74, no. 1-2 (1994): 129–38. http://dx.doi.org/10.1007/bf03055244.

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13

Wada, K., K. Ikuta, J. Osaka, and N. Inoue. "Analysis of scanning deep level transient spectroscopy." Applied Physics Letters 51, no. 20 (1987): 1617–19. http://dx.doi.org/10.1063/1.98573.

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14

Szatkowski, J., E. Płaczek-Popko, J. Fiałkowski, et al. "Cd0.8Mn0.2Te:(In/Al) – deep level transient spectroscopy." Physica B: Condensed Matter 292, no. 1-2 (2000): 114–16. http://dx.doi.org/10.1016/s0921-4526(00)00484-1.

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15

Szatkowski, J., E. Płaczek-Popko, A. Hajdusianek, S. Kuźmiński, B. Bieg, and P. Becla. "Deep Level Transient Spectroscopy Studies of CdMnTe." Acta Physica Polonica A 87, no. 2 (1995): 387–90. http://dx.doi.org/10.12693/aphyspola.87.387.

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16

Hjalmarson, Harold P., G. A. Samara, and John W. Farmer. "An improved deep level transient spectroscopy method." Journal of Applied Physics 63, no. 5 (1988): 1801–4. http://dx.doi.org/10.1063/1.339874.

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17

Atiq, M., Nazir A. Naz, and Akbar Ali. "Deep Level Transient Spectroscopy of AlGaInP LEDs." Journal of Modern Physics 05, no. 18 (2014): 2075–79. http://dx.doi.org/10.4236/jmp.2014.518203.

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18

Pandian, V., and V. Kumar. "Single‐gate deep level transient spectroscopy technique." Journal of Applied Physics 67, no. 1 (1990): 560–63. http://dx.doi.org/10.1063/1.345192.

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19

Dyba, P., E. Placzek-Popko, E. Zielony, et al. "Deep Levels in GaN p-n Junctions Studied by Deep Level Transient Spectroscopy and Laplace Transform Deep-Level Spectroscopy." Acta Physica Polonica A 119, no. 5 (2011): 669–71. http://dx.doi.org/10.12693/aphyspola.119.669.

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20

Boughaba, S., and D. Mathiot. "Deep level transient spectroscopy characterization of tungsten‐related deep levels in silicon." Journal of Applied Physics 69, no. 1 (1991): 278–83. http://dx.doi.org/10.1063/1.347708.

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21

Witte, H., A. Krtschil, M. Lisker, et al. "Fermi Level Pinning at GaN-interfaces: Correlation of electrical admittance and transient spectroscopy." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 936–42. http://dx.doi.org/10.1557/s1092578300005299.

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In GaN layers grown by molecular beam epitaxy as well as metal organic vapor phase epitaxy significant differences were found in the appearance of deep defects detected by thermal admittance spectroscopy as compared for deep level transient spectroscopy measurements. While, thermal admittance spectroscopy measurements which were made under zero bias conditions only show thermal emissions at activation energies between 130 and 170 meV, further deep levels existing in these GaN layers were evidenced by transient spectrocopy. This discrepancy is explained by a pinning effect of the Fermi level at

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22

Bollmann, Joachim, and Andre Venter. "Admittance spectroscopy or deep level transient spectroscopy: A contrasting juxtaposition." Physica B: Condensed Matter 535 (April 2018): 237–41. http://dx.doi.org/10.1016/j.physb.2017.07.048.

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23

Zhou, Jie, Lin Jun Wang, Xiao Xiang Sun, et al. "Deep Level Transient Spectroscopy System Designed by LabVIEW." Advanced Materials Research 765-767 (September 2013): 2324–28. http://dx.doi.org/10.4028/www.scientific.net/amr.765-767.2324.

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Deep level transient spectroscopy (DLTS) and photo induced current transient spectroscopy (PICTS) are commonly used methods for the identification semiconductor impurities and defects. In this paper, a measurement system of DLTS and PICTS has been developed by LabVIEW. A series of different instruments construct this systems hardware (signal generator; current amplifier; capacitance meter; oscilloscope,etc.) while software is also easy to program by LabVIEW. This system demonstrates high generality for both DLTS and PICTS, and data acquired can be stored or read in computer. By contrast, it is

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24

Anand, S., N. Carlsson, M‐E Pistol, L. Samuelson, and W. Seifert. "Deep level transient spectroscopy of InP quantum dots." Applied Physics Letters 67, no. 20 (1995): 3016–18. http://dx.doi.org/10.1063/1.114937.

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25

Nanu, Marian, Florence Boulch, Joop Schoonman, and Albert Goossens. "Deep-level transient spectroscopy of TiO2∕CuInS2 heterojunctions." Applied Physics Letters 87, no. 24 (2005): 242103. http://dx.doi.org/10.1063/1.2140611.

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26

Peaker, A. R., V. P. Markevich, I. D. Hawkins, B. Hamilton, K. Bonde Nielsen, and K. Gościński. "Laplace deep level transient spectroscopy: Embodiment and evolution." Physica B: Condensed Matter 407, no. 15 (2012): 3026–30. http://dx.doi.org/10.1016/j.physb.2011.08.107.

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27

Stievenard, D., and D. Vuillaume. "Profiling of defects using deep level transient spectroscopy." Journal of Applied Physics 60, no. 3 (1986): 973–79. http://dx.doi.org/10.1063/1.337340.

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28

Abbate, A., K. J. Han, I. V. Ostrovskii, and P. Das. "Acousto-electric deep-level transient spectroscopy in semiconductors." Solid-State Electronics 36, no. 5 (1993): 697–703. http://dx.doi.org/10.1016/0038-1101(93)90237-k.

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29

Laird, J. S., C. Jagadish, D. N. Jamieson, and G. J. F. Legge. "Scanning ion deep level transient spectroscopy: I. Theory." Journal of Physics D: Applied Physics 39, no. 7 (2006): 1342–51. http://dx.doi.org/10.1088/0022-3727/39/7/003.

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30

Ball, C. A. B., and A. B. Conibear. "Simulated lock‐in amplifier deep level transient spectroscopy." Review of Scientific Instruments 62, no. 11 (1991): 2831–32. http://dx.doi.org/10.1063/1.1142169.

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31

Marshall, A., and H. G. Maguire. "Deep level transient spectroscopy: instrumentation induced anomalous characteristics." IEEE Transactions on Instrumentation and Measurement 37, no. 4 (1988): 596–99. http://dx.doi.org/10.1109/19.9821.

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32

Morimoto, Jun, Michihiro Fudamoto, Kenichiro Tahira, Tatsuo Kida, Seiji Kato, and Toru Miyakawa. "Spectral Analysis of Deep Level Transient Spectroscopy (SADLTS)." Japanese Journal of Applied Physics 26, Part 1, No. 10 (1987): 1634–40. http://dx.doi.org/10.1143/jjap.26.1634.

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33

Usami, A., K. Kaneko, A. Ito, T. Wada, and S. I. Ishigami. "Deep-level transient spectroscopy study of bonded wafers." Semiconductor Science and Technology 9, no. 7 (1994): 1366–69. http://dx.doi.org/10.1088/0268-1242/9/7/012.

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34

Fan, Jiwei, and Robert Freer. "Deep level transient spectroscopy of SnO2-based varistors." Applied Physics Letters 90, no. 9 (2007): 093511. http://dx.doi.org/10.1063/1.2710752.

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35

Pal, D., S. Pal, and D. N. Bose. "Deep level transient spectroscopy of anisotropic semiconductor GaTe." Bulletin of Materials Science 17, no. 4 (1994): 347–54. http://dx.doi.org/10.1007/bf02745221.

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36

Engström, O., and M. Kaniewska. "Deep Level Transient Spectroscopy in Quantum Dot Characterization." Nanoscale Research Letters 3, no. 5 (2008): 179–85. http://dx.doi.org/10.1007/s11671-008-9133-5.

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37

Evangelou, E. K., A. D. Horevas, G. E. Giakoumakis, and N. G. Alexandropoulos. "A microcomputer based deep level transient spectroscopy system." Solid State Communications 80, no. 4 (1991): 247–49. http://dx.doi.org/10.1016/0038-1098(91)90017-p.

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38

Hanak, Thomas R., Assem M. Bakry, Donald j. Dunlavy, Fouad Abou-Elfotouh, Richard K. Ahrenkiel, and Michael L. Timmons. "Deep-level transient spectroscopy of AlGaAs and CuInSe2." Solar Cells 27, no. 1-4 (1989): 347–56. http://dx.doi.org/10.1016/0379-6787(89)90043-4.

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39

Bury, P., I. Jamnicky, and J. Ďurček. "Acoustic Deep-Level Transient Spectroscopy of MIS Structures." Physica Status Solidi (a) 126, no. 1 (1991): 151–61. http://dx.doi.org/10.1002/pssa.2211260117.

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40

Kolev, P. V., M. J. Deen, and N. Alberding. "Averaging and recording of digital deep-level transient spectroscopy transient signals." Review of Scientific Instruments 69, no. 6 (1998): 2464–74. http://dx.doi.org/10.1063/1.1148975.

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41

Shaban, E. H. "Non-exponential capacitance transient in deep level transient spectroscopy (DLTS) measurements." Solid-State Electronics 39, no. 2 (1996): 321–22. http://dx.doi.org/10.1016/0038-1101(95)00153-0.

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42

Buchwald, Walter R., Robert E. Peale, Perry C. Grant, Julie V. Logan, Preston T. Webster, and Christian P. Morath. "The Sliding-Aperture Transform and Its Applicability to Deep-Level Transient Spectroscopy." Applied Sciences 12, no. 11 (2022): 5317. http://dx.doi.org/10.3390/app12115317.

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A mathematical method is presented for the extraction of defect parameters from the multiexponential decays generated during deep-level transient spectroscopy experiments. Such transient phenomenon results from the ionization of charge trapped in defects located in the depletion width of a semiconductor diode. From digitized transients acquired at fixed temperatures, this method produces a rate–domain spectral signature associated with all defects in the semiconductor. For signal-to-noise ratio of 1000, defect levels with carrier emission rates differing by as little as 1.5 times may be distin

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43

Ballandovich, V. S. "Deep-level transient spectroscopy of radiation-induced levels in 6H-SiC." Semiconductors 33, no. 11 (1999): 1188–92. http://dx.doi.org/10.1134/1.1187846.

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44

Hanak, Thomas R., Richard K. Ahrenkiel, Donald J. Dunlavy, Assem M. Bakry, and Michael L. Timmons. "A new method to analyze multiexponential transients for deep‐level transient spectroscopy." Journal of Applied Physics 67, no. 9 (1990): 4126–32. http://dx.doi.org/10.1063/1.344973.

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45

Pearce, N. O., B. Hamilton, A. R. Peaker, and R. A. Craven. "Application of deep level transient spectroscopy to metal‐oxide‐semiconductor relaxation transients." Journal of Applied Physics 62, no. 2 (1987): 576–81. http://dx.doi.org/10.1063/1.339785.

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46

Berg, L., L. Schnorr, L. Merces, J. Bettini, C. C. Bof Bufon, and T. Heinzel. "Transient photocapacitance spectroscopy on Au/TiO₂ Schottky diodes with rolled-up nanomembrane electrodes." Journal of Applied Physics 133, no. 6 (2023): 065704. http://dx.doi.org/10.1063/5.0132445.

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Rolled-up nanomembrane electrodes are used to prepare optically transparent [Formula: see text] Schottky diodes suitable for deep level transient photocapacitance spectroscopy. It is demonstrated that both the binding energy and the capture cross section of the oxygen vacancy can be extracted from the photocapacitance transients using a rate equation model. The values are consistent with those obtained from conventional deep level transient spectroscopy, taken from the same sample. Furthermore, information about the capture process can be extracted.

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47

Zhang, Rong, Kai Yang, Guoyi Qing, et al. "Profiling the Deep Levels inSiGe/Si Microstructure by Small-Pulse Deep Level Transient Spectroscopy." Materials Science Forum 196-201 (November 1995): 485–90. http://dx.doi.org/10.4028/www.scientific.net/msf.196-201.485.

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48

Halder, N. C., and T. Goodman. "Deep levels in low temperature GaAs probed by field effect deep level transient spectroscopy." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 17, no. 1 (1999): 60. http://dx.doi.org/10.1116/1.590517.

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49

Yoshino, J., Y. Okamoto, J. Morimoto, and T. Miyakawa. "Distribution of deep levels in Si:Au by spectral analysis of deep-level transient spectroscopy." Applied Physics A: Materials Science & Processing 66, no. 3 (1998): 323–25. http://dx.doi.org/10.1007/s003390050673.

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50

Kato, Masashi, Kosuke Kito, and Masaya Ichimura. "Characterization of Deep Levels in High-Resistive 6H-SiC by Current Deep Level Transient Spectroscopy." Materials Science Forum 615-617 (March 2009): 381–84. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.381.

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We measured the temperature dependence of the electrical resistivity for two high-purity undoped 6H-SiC bulk wafers with resistivities of 1.5103 cm and 8.3108 cm at room temperature. We also characterized the deep levels affecting the semi-insulating property by current deep level transient spectroscopy (I-DLTS) and photo induced current level transient spectroscopy (PICTS) measurements. The activation energies of the resistivity were 0.11 eV and 0.59 eV for the samples with lower and higher resistivities, respectively. In I-DLTS and PICTS spectra, the sample with lower resistivity shows

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