Relevant bibliographies by topics / Deep reactive ion etching (DRIE)

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  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers

Academic literature on the topic 'Deep reactive ion etching (DRIE)'

Author: Grafiati
Published: 4 June 2021
Last updated: 2 February 2022

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Journal articles on the topic "Deep reactive ion etching (DRIE)"

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TEO, SELIN H. G., A. Q. LIU, G. L. SIA, C. LU, J. SINGH, and M. B. YU. "DEEP REACTIVE ION ETCHING FOR PILLAR TYPE NANOPHOTONIC CRYSTAL." International Journal of Nanoscience 04, no. 04 (2005): 567–74. http://dx.doi.org/10.1142/s0219581x05003590.

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Experimental results and techniques developed for time multiplexed deep reactive ion etching of nano-photonic crystals are presented. Specifically, the high aspect ratio pillar type two-dimensional photonic crystal (PhC) structure on silicon is fabricated and studied for its high potential in application to lightwave circuits and also for discussion of the many unique challenges involved in its fabrication process as opposed to standard larger scale devices. In the experiments, patterns of nano-dots were first obtained using deep UV lithography and transferred to a silicon oxide hardmask prior
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Gerlt, Michael S., Nino F. Läubli, Michel Manser, Bradley J. Nelson, and Jürg Dual. "Reduced Etch Lag and High Aspect Ratios by Deep Reactive Ion Etching (DRIE)." Micromachines 12, no. 5 (2021): 542. http://dx.doi.org/10.3390/mi12050542.

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Deep reactive ion etching (DRIE) with the Bosch process is one of the key procedures used to manufacture micron-sized structures for MEMS and microfluidic applications in silicon and, hence, of increasing importance for miniaturisation in biomedical research. While guaranteeing high aspect ratio structures and providing high design flexibility, the etching procedure suffers from reactive ion etching lag and often relies on complex oxide masks to enable deep etching. The reactive ion etching lag, leading to reduced etch depths for features exceeding an aspect ratio of 1:1, typically causes a he
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Baracu, Angela M., Christopher A. Dirdal, Andrei M. Avram, et al. "Metasurface Fabrication by Cryogenic and Bosch Deep Reactive Ion Etching." Micromachines 12, no. 5 (2021): 501. http://dx.doi.org/10.3390/mi12050501.

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The research field of metasurfaces has attracted considerable attention in recent years due to its high potential to achieve flat, ultrathin optical devices of high performance. Metasurfaces, consisting of artificial patterns of subwavelength dimensions, often require fabrication techniques with high aspect ratios (HARs). Bosch and Cryogenic methods are the best etching candidates of industrial relevance towards the fabrication of these nanostructures. In this paper, we present the fabrication of Silicon (Si) metalenses by the UV-Nanoimprint Lithography method and cryogenic Deep Reactive Ion E
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Song, Ying, and Min Zou. "Superhydrophobic surfaces by dynamic nanomasking and deep reactive ion etching." Proceedings of the Institution of Mechanical Engineers, Part N: Journal of Nanoengineering and Nanosystems 221, no. 2 (2007): 41–48. http://dx.doi.org/10.1243/17403499jnn106.

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This paper reports a study on fabricating superhydrophobic surfaces with micro- and nanohierarchical topography by dynamic nanomasking (DNM) and deep reactive ion etching (DRIE). In this study, thin layers of gold (Au) were sputtered on silicon (Si) wafers followed by annealing the samples in a conventional furnace to break the thin films into Au nanoparticles attached to the Si surfaces. These randomly distributed nanoparticles served as dynamic nanomasks during DRIE processes, in which sulphur hexafluoride (SF6) and octofluorocyclobutane (C4F8) were used as etching and polymerization gases,
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Bolton, Chris J. W., Olivia Howells, Gareth J. Blayney, et al. "Hollow silicon microneedle fabrication using advanced plasma etch technologies for applications in transdermal drug delivery." Lab on a Chip 20, no. 15 (2020): 2788–95. http://dx.doi.org/10.1039/d0lc00567c.

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Evans, Laura J., and Glenn M. Beheim. "Deep Reactive Ion Etching (DRIE) of High Aspect Ratio SiC Microstructures Using a Time-Multiplexed Etch-Passivate Process." Materials Science Forum 527-529 (October 2006): 1115–18. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1115.

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High aspect ratio silicon carbide (SiC) microstructures are needed for microengines and other harsh environment micro-electro-mechanical systems (MEMS). Previously, deep reactive ion etching (DRIE) of low aspect ratio (AR ≤1) deep (>100 *m) trenches in SiC has been reported. However, existing DRIE processes for SiC are not well-suited for definition of high aspect ratio features because such simple etch-only processes provide insufficient control over sidewall roughness and slope. Therefore, we have investigated the use of a time-multiplexed etch-passivate (TMEP) process, which alternates e
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Zhong, Hao, Dong Yang Li, Yu Hao Song, Wei Li, Xiang Dong Jiang, and Ya Dong Jiang. "Nano-Structured Silicon: Fabrication, Optical Property, Defect States and Device Application." Materials Science Forum 947 (March 2019): 66–70. http://dx.doi.org/10.4028/www.scientific.net/msf.947.66.

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We use two different methods to fabricate nanostructured silicon on the surface of C-Si: femtosecond laser etching (FLE) and deep reactive ion etching (DRIE) combined with plasma immersion ion implantation (PIII). Nanocone silicon arrays of dense and random distribution are obtained by FLE. Meanwhile, cylindroid silicon nanostructures of excellent regularity and uniform coverage are achieved by DRIE. These nanostructured silicon materials show a remarkable enhancement on absorptance at near-infrared wavelength. Moreover, the minority carriers lifetime measurement is also carried out to evaluat
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Shi, Gui Xiong, Shi Xing Jia, Guo Qin Jiang, and Jian Zhu. "Research of Micro-Inertial Device High-Aspect-Ratio Etching Parameters." Key Engineering Materials 609-610 (April 2014): 706–9. http://dx.doi.org/10.4028/www.scientific.net/kem.609-610.706.

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This is mainly due to the high chemical reactivity and spontaneous etching nature of the fluorine radicals towards silicon, and the high volatility of the silicon fluorides as reaction products. Anisotropy can only be achieved by the inclusion of sidewall passivation schemes to the process. The existing approaches to deep reactive ion etching (DRIE) of silicon are distinguished by the way sidewall passivation is achieved, the key to anisotropy and overall performance of the etch process. Cryogenic etching and the so-called Bosch process with alternating etch and passivation cycles are the two
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Huff, Michael. "Recent Advances in Reactive Ion Etching and Applications of High-Aspect-Ratio Microfabrication." Micromachines 12, no. 8 (2021): 991. http://dx.doi.org/10.3390/mi12080991.

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This paper reviews the recent advances in reaction-ion etching (RIE) for application in high-aspect-ratio microfabrication. High-aspect-ratio etching of materials used in micro- and nanofabrication has become a very important enabling technology particularly for bulk micromachining applications, but increasingly also for mainstream integrated circuit technology such as three-dimensional multi-functional systems integration. The characteristics of traditional RIE allow for high levels of anisotropy compared to competing technologies, which is important in microsystems device fabrication for a n
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Liu, Yang, Ling Yun Wang, Ting Ping Lei, Jiang Du, Yi Wen Jiang, and Dao Heng Sun. "Design and Simulation of a Differential and Decoupled Micromachined Gyroscope." Key Engineering Materials 483 (June 2011): 674–78. http://dx.doi.org/10.4028/www.scientific.net/kem.483.674.

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In this paper, a differential and decoupled micromachined gyroscope fabricated by through-etching the silicon substrate anodically bonded on the glass substrate was presented. The decoupled structure can make the sense mode frequency match with the drive mode frequency and reduce the quadrature error. The sensitivity is further improved by differential detection using antiphase oscillation of double masses along the drive axis. Finite-element simulation is performed with ANSYS software to analyze the vibration mode. The device employs silicon-on-glass gyroscope sensor chip processed with Deep
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Dissertations / Theses on the topic "Deep reactive ion etching (DRIE)"

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Chung, Charles Choi. "Thermomigrated Junction Isolation of Deep Reactive Ion Etched, Single Crystal Silicon Devices, and its Application to Inertial Navigation Systems." Diss., Georgia Institute of Technology, 2004. http://hdl.handle.net/1853/5120.

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The introduction of deep reactive ion etching (DRIE) technology has greatly expanded the accessible design space for microscopic systems. Structures that are hundreds of micrometers tall with aspect ratios of 40:1, heretofore impossible, can now be achieved. However, this technology is primarily a forming technology, sculpting structures from a substrate. This work seeks to complement deep reactive ion etching by developing an electrical isolation technology to enable electro-mechanical function in these new deep reactive ion etched structures. The objective of the research is twofold. The
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Perng, John Kangchun. "High Aspect-Ratio Nanoscale Etching in Silicon using Electron Beam Lithography and Deep Reactive Ion Etching (DRIE) Technique." Thesis, Georgia Institute of Technology, 2006. http://hdl.handle.net/1853/11543.

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This thesis reports the characterization and development of nanolithography using Electron Beam Lithography system and nanoscale plasma etching. The standard Bosch process and a modified three-pulse Bosch process were developed in STS ICP and Plasma ICP system separately. The limit of the Bosch process at the nanoscale regime was investigated and documented. Furthermore, the effect of different control parameters on the process were studied and summarized in this report. 28nm-wide trench with aspect-ratio of 25 (smallest trench), and 50nm-wide trench with aspect ratio of 37 (highest aspect-rat
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Yung, Chi-Fan 1973. "A process technology for realizing integrated inertial sensors using deep reactive ion etching (DRIE) and aligned wafer bonding." Thesis, Massachusetts Institute of Technology, 1999. http://hdl.handle.net/1721.1/80148.

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Aydemir, Akin. "Deep-trench Rie Optimization For High Performance Mems Microsensors." Master's thesis, METU, 2007. http://etd.lib.metu.edu.tr/upload/12608719/index.pdf.

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This thesis presents the optimization of deep reactive ion etching process (DRIE) to achieve high precision 3-dimensional integrated micro electro mechanical systems (MEMS) sensors with high aspect ratio structures. Two optimization processes have been performed to achieve 20 &amp<br>#956<br>m depth for 1 &amp<br>#956<br>m opening for a dissolved wafer process (DWP) and to achieve 100 &amp<br>#956<br>m depth for 1 &amp<br>#956<br>m opening for silicon-on-glass (SOG) process. A number of parameters affecting the etch rate and profile angle are investigated, including the step times, etch step p
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Shearrow, Anne M. "Ionic liquid-mediated sol-gel sorbents for capillary microextraction and challenges in glass microfabrication." [Tampa, Fla] : University of South Florida, 2009. http://purl.fcla.edu/usf/dc/et/SFE0002988.

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Morgan, Brian C. "Development of a deep silicon phase Fresnel lens using gray-scale lithography and deep reactive ion etching." College Park, Md. : University of Maryland, 2004. http://hdl.handle.net/1903/240.

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Thesis (M.S.) -- University of Maryland, College Park, 2004.<br>Thesis research directed by: Dept. of Electrical and Computer Engineering. Title from t.p. of PDF. Includes bibliographical references. Published by UMI Dissertation Services, Ann Arbor, Mich. Also available in paper.
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Gould, Parker Andrew, and Mitchell David Hsing. "Design, fabrication, and characterization of a compact deep reactive ion etching system for MEMS processing." Thesis, Massachusetts Institute of Technology, 2014. http://hdl.handle.net/1721.1/93835.

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Thesis: S.M., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2014.<br>Cataloged from PDF version of thesis.<br>Includes bibliographical references (pages 123-126).<br>A general rule of thumb for new semiconductor fabrication facilities (Fabs) is that revenues from the first year of production must match the capital cost of building the fab itself. With modem Fabs routinely exceeding $1 billion to build, this rule serves as a significant barrier to entry for groups seeking to commercialize new semiconductor devices aimed at smaller market segme
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Diaz, Jaime O. (Jaime Oscar Diaz Villamil). "A feature-to-wafer-scale model of etch-rate non-uniformity in deep reactive ion etching/." Thesis, Massachusetts Institute of Technology, 2010. http://hdl.handle.net/1721.1/61572.

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Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2010.<br>Cataloged from PDF version of thesis.<br>Includes bibliographical references (p. 76-77).<br>Deep Reactive Ion Etching (DRIE) is an inherently complex dry etching process commonly used in the semiconductor manufacturing industry. This work presents a new modeling approach to capture global etch rate variation in DRIE by integrating wafer- and feature-scale nonuniformity models that are grounded on an ion-neutral synergy model for etch rate. Our method focuses on diffusive tran
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Malik, Adnan Muhammad. "Development of High Aspect Ratio Nano-Focusing Si and Diamond Refractive X-ray optics using deep reactive ion etching." Thesis, University of Oxford, 2013. http://ora.ox.ac.uk/objects/uuid:588ca438-e4c6-4d51-8f13-30bcb3c437a3.

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This thesis is devoted to the development of nano-focusing refractive optics for high energy X-rays using planar microelectronic technology. The availability of such optics is the key for the exploitation of high brilliance third and fourth generation X-ray sources. Advancements in the quality of optics available are commensurate with advancements in the fabrication technology. The fabrication process directly influences the quality and performance, so must be understood and controlled. In the first part of this thesis, the development of high aspect ratio Si kinoform lenses is examined. It is
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Dhru, Shailini Rajiv. "Process Development For The Fabrication Of Mesoscale Electrostatic Valve Assembly." Master's thesis, University of Central Florida, 2007. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/4244.

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This study concentrates on two of the main processes involved in the fabrication of electrostatic valve assembly, thick resist photolithography and wet chemical etching of a polyamide film. The electrostatic valve has different orifice diameters of 25, 50, 75 and 100 &#956;m. These orifice holes are to be etched in the silicon wafer with deep reactive ion etching. The photolithography process is developed to build a mask of 15 &#956;m thick resist pattern on silicon wafer. This photo layer acts as a mask for deep reactive ion etching. Wet chemical etching process is developed to etch kapton po
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Book chapters on the topic "Deep reactive ion etching (DRIE)"

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Evans, Laura J., and Glenn M. Beheim. "Deep Reactive Ion Etching (DRIE) of High Aspect Ratio SiC Microstructures Using a Time-Multiplexed Etch-Passivate Process." In Silicon Carbide and Related Materials 2005. Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.1115.

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Matsumoto, Sohei, Andreas Klein, and Ryutaro Maeda. "Bi-Directional Valve-Less Micropump Fabricated Using Deep Reactive Ion Etching." In Micro Total Analysis Systems 2000. Springer Netherlands, 2000. http://dx.doi.org/10.1007/978-94-017-2264-3_43.

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Gray, Bonnie L., Scott D. Collins, and Rosemary L. Smith. "Interlocking Mechanical and Microfluidic Interconnections Fabricated by Deep Reactive Ion Etching." In Micro Total Analysis Systems 2001. Springer Netherlands, 2001. http://dx.doi.org/10.1007/978-94-010-1015-3_64.

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Schilp, A., M. Hausner, M. Puech, N. Launay, H. Karagoezoglu, and F. Laermer. "Advanced Etch Tool for High Etch Rate Deep Reactive Ion Etching in Silicon Micromachining Production Environment." In Advanced Microsystems for Automotive Applications 2001. Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-18253-2_21.

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Laermer, Franz, Sami Franssila, Lauri Sainiemi, and Kai Kolari. "Deep reactive ion etching." In Handbook of Silicon Based MEMS Materials and Technologies. Elsevier, 2020. http://dx.doi.org/10.1016/b978-0-12-817786-0.00016-5.

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Laermer, Franz, Sami Franssila, Lauri Sainiemi, and Kai Kolari. "Deep Reactive Ion Etching." In Handbook of Silicon Based MEMS Materials and Technologies. Elsevier, 2010. http://dx.doi.org/10.1016/b978-0-8155-1594-4.00023-1.

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"Deep Reactive Ion Etching." In Introduction to Microfabrication. John Wiley & Sons, Ltd, 2010. http://dx.doi.org/10.1002/9781119990413.ch21.

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Laermer, Franz, Sami Franssila, Lauri Sainiemi, and Kai Kolari. "Deep Reactive Ion Etching." In Handbook of Silicon Based MEMS Materials and Technologies. Elsevier, 2015. http://dx.doi.org/10.1016/b978-0-323-29965-7.00021-x.

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Beheim, Glenn. "Deep Reactive Ion Etching for Bulk Micromachining of Silicon Carbide." In The MEMS Handbook. CRC Press, 2001. http://dx.doi.org/10.1201/9781420050905.ch21.

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Conference papers on the topic "Deep reactive ion etching (DRIE)"

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Ayón, A. A., X. Zhang, and R. Khanna. "Ultra Deep Anisotropic Silicon Trenches Using Deep Reactive Ion Etching (DRIE)." In 2000 Solid-State, Actuators, and Microsystems Workshop. Transducer Research Foundation, Inc., 2000. http://dx.doi.org/10.31438/trf.hh2000.82.

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Zhang, Shawn X. D., Ronald Hon, and S. W. Ricky Lee. "Fabrication of Sub-Micron Silicon Vias by Deep Reactive Ion Etching." In ASME 2005 Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems collocated with the ASME 2005 Heat Transfer Summer Conference. ASMEDC, 2005. http://dx.doi.org/10.1115/ipack2005-73299.

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Deep reactive ion etching (DRIE) is a major microfabrication process for micro-electro-mechanical system (MEMS) devices. In recent years DRIE is also applied to make through-silicon-vias (TSVs) for 3D packaging. Typical DRIE-formed TSVs are in the range of a few microns to tens of microns. In the present study, silicon vias with diameters in the sub-micron range (0.5 μm and 0.8 μm) are attempted. For comparison purposes, larger silicon vias (1 μm and 3 μm) are fabricated as well. In this paper, the microfabrication processes are described. The experimental results and comparisons in terms of v
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Zhang-Cheng Hao and Wei Hong. "Developing terahertz filters using the deep reactive ion etching (DRIE) process." In 2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP). IEEE, 2016. http://dx.doi.org/10.1109/imws-amp.2016.7588426.

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Jensen, Soren, Jonas M. Jensen, Ulrich J. Quaade, and Ole Hansen. "Uniformity-improving dummy structures for deep reactive ion etching (DRIE) processes." In MOEMS-MEMS Micro & Nanofabrication, edited by Mary-Ann Maher and Harold D. Stewart. SPIE, 2005. http://dx.doi.org/10.1117/12.588552.

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Cochran, Kevin R., Lawrence Fan, and Don L. DeVoe. "High-power optical microswitch fabricated by deep reactive ion etching (DRIE)." In Micromachining and Microfabrication, edited by James H. Smith. SPIE, 2003. http://dx.doi.org/10.1117/12.477927.

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Miki, N., C. J. Teo, L. Ho, and X. Zhang. "Precision Fabrication of High-Speed Micro-Rotors using Deep Reactive Ion Etching (DRIE)." In 2002 Solid-State, Actuators, and Microsystems Workshop. Transducer Research Foundation, Inc., 2002. http://dx.doi.org/10.31438/trf.hh2002.66.

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Gould, P. A., M. D. Hsing, H. Q. Li, K. K. Gleason, and M. A. Schmidt. "AN ultra-low cost deep reactive ion etching (drie) tool for flexible, small volume manufacturing." In TRANSDUCERS 2015 - 2015 18th International Solid-State Sensors, Actuators and Microsystems Conference. IEEE, 2015. http://dx.doi.org/10.1109/transducers.2015.7181414.

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Phinney, Leslie M., Bonnie B. McKenzie, James A. Ohlhausen, Thomas E. Buchheit, and Randy J. Shul. "Characterization of SOI MEMS Sidewall Roughness." In ASME 2011 International Mechanical Engineering Congress and Exposition. ASMEDC, 2011. http://dx.doi.org/10.1115/imece2011-62593.

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Deep reactive ion etching (DRIE) of silicon enables high aspect ratio, deep silicon features that can be incorporated into the fabrication of microelectromechanical systems (MEMS) sensors and actuators. The DRIE process creates silicon structures and consists of three steps: conformal polymer deposition, ion sputtering, and chemical etching. The sequential three step process results in sidewalls with roughness that varies with processing conditions. This paper reports the sidewall roughness for DRIE etched MEMS as a function of trench width from 5 μm to 500 μm for a 125 μm thick device layer c
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Jones, Debbie G., and Albert P. Pisano. "Fabrication of Ultra Thick Ferromagnetic Structures in Silicon." In ASME 2004 International Mechanical Engineering Congress and Exposition. ASMEDC, 2004. http://dx.doi.org/10.1115/imece2004-61909.

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A novel fabrication process is presented to create ultra thick ferromagnetic structures in silicon. The structures are fabricated by electroforming NiFe into silicon templates patterned with deep reactive ion etching (DRIE). Thin films are deposited into photoresist molds for characterization of an electroplating cell. Results show that electroplated films with a saturation magnetization above 1.6 tesla and compositions of approximately 50/50 NiFe can be obtained through agitation of the electrolyte. Scanning electron microscopy (SEM) images show that NiFe structures embedded in a 500 μm thick
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Zhao, Yanzhu, Xiaosong Wu, Yong-Kyu Yoon, et al. "Fabrication of Micromachined Mold Masters for 3-D, High-Aspect-Ratio Cell Culturing Scaffolds." In ASME 2005 International Mechanical Engineering Congress and Exposition. ASMEDC, 2005. http://dx.doi.org/10.1115/imece2005-81991.

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In this paper, three approaches to micromachined mold master structures for molding of a wafer-scale bone culturing platform are compared and contrasted. The processes investigated are a silicon deep-reactive ion etching (DRIE) process, an SU-8/polydimethylsiloxane(PDMS) process, and a multi-step SU-8 process. Upon comparison of the advantages and disadvantages of each approach, a wafer-scale implementation of bone cell culturing substrates is successfully demonstrated using the two-step SU-8 process, and successful duplication of hydrogels based on these molds is demonstrated.
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