Relevant bibliographies by topics / Defect properties

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Defect properties'

Author: Grafiati
Published: 4 June 2021
Last updated: 1 February 2022

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Journal articles on the topic "Defect properties"

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Liang, Yingjing, Hongfa Qin, Jianzhang Huang, Sha Huan, and David Hui. "Mechanical properties of boron nitride sheet with randomly distributed vacancy defects." Nanotechnology Reviews 8, no. 1 (November 12, 2019): 210–17. http://dx.doi.org/10.1515/ntrev-2019-0019.

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Abstract Defects and temperature effects on the mechanical properties of hexagonal boron nitride sheet (h-BN) containing randomly distributed defects are investigated by molecular dynamics simulations and the reasons of the results are discussed. Results show that defect deteriorate the mechanical performance of BNNS. The mechanical properties are reduced by increasing percentage of vacancy defects including fracture strength, fracture strain and Young’s modulus. Simulations also indicate that the mechanical properties decrease with the temperature increasing. Moreover, defects affect the stable configuration at high temperature. With the percentage of defect increases the nanostructures become more and more unstable. Positions of the defect influent the mechanical properties. The higher the temperature and the percentage of defect are, the stronger the position of the randomly distributed defect affects the mechanical properties. The study provides a theoretical basis for the preparation and performance optimization of BNNSs.
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JIANG, B., J. L. PENG, L. A. BURSILL, and H. WANG. "MICROSTRUCTURE AND PROPERTIES OF FERROELECTRIC Bi4Ti3O12 THIN FILMS." Modern Physics Letters B 13, no. 26 (November 10, 1999): 933–45. http://dx.doi.org/10.1142/s0217984999001147.

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The film morphology and defect structure of ferroelectric bismuth titanate thin films are studied by high resolution transmission electron microscopy. As-grown and RTA-processed thin films have similar defect structures, consisting of stacking faults and complex intergrowth defect structures. The as-grown specimens prepared at low temperature had smaller particle size with higher density of these defects compared to RTA-processed samples. Detailed atomic structure models for the stacking faults and intergrowth defect structures are proposed and the computer-simulated images are compared with experiment.
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Sozykin, Sergey Anatolevich, Valeriy Petrovich Beskachko, and G. P. Vyatkin. "Atomic Structure and Mechanical Properties of Defective Carbon Nanotube (7,7)." Materials Science Forum 843 (February 2016): 78–84. http://dx.doi.org/10.4028/www.scientific.net/msf.843.78.

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The article presents the results of first-principle modeling of a defectless (7,7) carbon nanotube and (7,7) nanotubes containing single and double vacancy defects, as well as Stone–Wales defects. These types of defects are often found in real nanotubes and affect their properties. We have established that reliable results can be obtained by using models of more than 1.5 nm in length. It turned out that a single vacancy defect has the least influence on Young modulus, and double n type vacancy defect in the most influential. The elongation at break also depends on the defect type and is 30-60% less than for perfect tubes.
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Sun, S. P., Y. F. Hu, X. P. Li, Y. Chen, H. J. Wang, Y. Yu, Y. Jiang, and D. Q. Yi. "The effect of point defect on mechanical properties of MoSi2." International Journal of Modern Physics B 31, no. 16-19 (July 26, 2017): 1744081. http://dx.doi.org/10.1142/s0217979217440817.

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The effect of point defect on mechanical properties of MoSi2 has been investigated by the first-principles. The elastic constants, mechanical modulus, hardness and thermodynamic properties of MoSi2 with four different single point defects have been calculated. By comparing with the defect-free MoSi2, it is found that the bulk modulus/shear modulus ratio (B/G) of MoSi2 with a single point defect increases slightly while the Debye temperature decreases drastically, which indicates that MoSi2 with some point defects have relatively good ductility. The calculated three-dimensional (3D) contours of elastic modulus and these projections on the (001) and (010) planes show that the directionality of Young’s modulus and shear modulus is unapparent for MoSi2 with a point defect (V[Formula: see text] and Mo[Formula: see text]) but it is relatively obvious for MoSi2 with V[Formula: see text] and Si[Formula: see text]. It suggests that V[Formula: see text] and Si[Formula: see text] can strengthen the anisotropy in elasticity. The electronic properties of C11[Formula: see text] MoSi2 with different single point defects have been studied to reveal further the influencing mechanism of point defect on mechanical properties. This work should help reveal the interrelation between intrinsic defects and service performance of MoSi2.
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Zhao, Peng Cheng, Yu Bao Niu, Shuo Qin, and Yang Tao Yu. "Effect of Bucking on the Mechanical Properties of Honeycomb Sandwich Structure." Applied Mechanics and Materials 484-485 (January 2014): 705–7. http://dx.doi.org/10.4028/www.scientific.net/amm.484-485.705.

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Static compression test on the Honeycomb sandwich structure with surface core defect carry out in this paper. The specimen divided into four groups, one had no defect, one had circle defect, the other two groups had rectangular defect in different direction. In the process of loading the strain gauge which located on the specimen surface in each group record the strain transformation of the specimen surface. Through the Static load test on the fatigue testing machine, fracture load of each specimen was record. According to the data, how the size and shape of the defect influence the compression static strength of Honeycomb sandwich was discussed, and inspecting defects direction how to affect the structural static strength by means of theoretical analysis and data fitting, meanwhile the shape of the defects in structure how to effect buckling was discussed too.
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Jadi, Supri, and A. Setiadi. "Structural Shifting and Electronic Properties of Stone-Wales Defect in Armchair Edge (5,5) Carbon Nanotube." Advanced Materials Research 772 (September 2013): 380–85. http://dx.doi.org/10.4028/www.scientific.net/amr.772.380.

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Stone Wales (SW) defect is one type of topological defect on the CNT, in this study we performed first principles calculations of SW defects in armchair edge (5,5) carbon nanotube (CNT) by the density functional theory (DFT). Two different defects were studied such as longitudinal and circumference types. Our calculation results show that a longitudinal SW defect is more stable than circumference SW defect. However barrier energy as parameter to control the SW defect in CNT was studied, in calculation we applied Nudge Elastic Band (NEB) method to find minimum energy path (MEP) and barrier energy for SW defect transitions. The result shows that barrier energy of circumference SW defect is lower than another one. We also found that in the case of circumference SW defect, armchair edge (5,5) CNT become semiconductor with the band gap of 0.0544 eV.
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Wolff, J., M. Franz, A. Broska, B. Köhler, and Th Hehenkamp. "Defect types and defect properties in FeAl alloys." Materials Science and Engineering: A 239-240 (December 1997): 213–19. http://dx.doi.org/10.1016/s0921-5093(97)00584-4.

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Lowitzer, Stephan, Dan J. Wilson, Björn Winkler, Victor Milman, and Julian D. Gale. "Defect properties of albite." Physics and Chemistry of Minerals 35, no. 3 (December 5, 2007): 129–35. http://dx.doi.org/10.1007/s00269-007-0204-4.

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Kamei, Koji, Ling Guo, Kenji Momose, and Hitoshi Osawa. "Structure of Straight-Line Defect and its Effect on the Electrical Properties of Schottky Barrier Diodes." Materials Science Forum 858 (May 2016): 213–16. http://dx.doi.org/10.4028/www.scientific.net/msf.858.213.

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We have investigated the “straight-line defect,” which has not been classified separately and is quite similar to the carrot defect. We found that the straight-line defect differed structurally from the carrot defect. The presence of a particle on the substrate-epi layer interface seemed to be the cause of the defect; a layer of poly-type (3C-SiC) extended from the particle to the epi-layer surface. The straight-line defect likely resulted from shape change from the 3C-SiC triangular defect. This change in shape from triangular to straight-line defects depended on the C/Si ratio. To investigate the electrical characteristics, we fabricated a Schottky barrier diode (SBD) structure on a silicon carbide (SiC) epi wafer. With application of a high voltage, destruction occurred on both the upstream and the downstream side of the step flow of straight-line defects in the reverse voltage test. This reverse direction characteristic differed from that observed with triangular defects.
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Li, Bao Long, Li Jun Zhou, and Jian Gao Guo. "Influence of Defects on Elastic Buckling Properties of Single-Layered Graphene Sheets." Key Engineering Materials 636 (December 2014): 11–14. http://dx.doi.org/10.4028/www.scientific.net/kem.636.11.

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Molecular structural mechanics based finite element method has been applied to study the effects of two types of Stone-Wales (SW) defects and vacancy defect on elastic buckling properties of single-layered graphene sheets (SLGSs). The defect effect factors of critical buckling stresses are calculated for the defective SLGSs with different chirality and geometrical dimensions. It is proved that defect effect factors are size-dependent and chirality-dependent. The results show that the vacancy defects will always weaken the SLGSs’ stability, and two types of SW defects have different effects on zigzag and armchair SLGSs. What’s more, the positions of defects also have remarkable influence on the critical buckling stress of SLGSs.
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Dissertations / Theses on the topic "Defect properties"

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Vuong, Amanda. "Nanocarbon : defect architectures and properties." Thesis, University of Surrey, 2017. http://epubs.surrey.ac.uk/845194/.

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The allotropes of carbon make its solid phases amongst the most diverse of any element. It can occur naturally as graphite and diamond, which have very different properties that make them suitable for a wide range of technological and commercial purposes. Recent developments in synthetic carbon include Highly Oriented Pyrolytic Graphite (HOPG) and nano-carbons, such as fullerenes, nanotubes and graphene. The main industrial application of bulk graphite is as an electrode material in steel production, but in purified nuclear graphite form, it is also used as a moderator in Advanced Gas-cooled Reactors across the United Kingdom. Both graphene and graphite are damaged over time when subjected to bombardment by electrons, neutrons or ions, and these have a wide range of effects on their physical and electrical properties, depending on the radiation flux and temperature. This research focuses on intrinsic defects in graphene and dimensional change in nuclear graphite. The method used here is computational chemistry, which complements physical experiments. Techniques used comprise of density functional theory (DFT) and molecular dynamics (MD), which are discussed in chapter 2 and chapter 3, respectively. The succeeding chapters describe the results of simulations performed to model defects in graphene and graphite. Chapter 4 presents the results of ab initio DFT calculations performed to investigate vacancy complexes that are formed in AA stacked bilayer graphene. In AB stacking, carbon atoms surrounding the lattice vacancies can form interlayer structures with sp2 bonding that are lower in energy compared to in-plane reconstructions. From the investigation of AA stacking, sp2 interlayer bonding of adjacent multivacancy defects in registry creates a type of stable sp2 bonded wormhole between the layers. Also, a new class of mezzanine structure characterised by sp3 interlayer bonding, resembling a prismatic vacancy loop has also been identified. The mezzanine, which is a V6 hexavacancy variant, where six sp3 carbon atoms sit midway between two carbon layers and bond to both, is substantially more stable than any other vacancy aggregate in AA stacked layers. Chapter 5 presents the results of ab initio DFT calculations performed to investigate the wormhole and mezzanine defect that were identified in chapter 4 and the ramp defect discovered by Trevethan et al. DFT calculations were performed on these defects in twisted bilayer graphene. From the investigation of vacancy complexes in twisted bilayer graphene, it is found that vacancy complexes are unstable in the twisted region and are more favourable in formation energy when the stacking arrangement is close to AA or AB stacking. It has also been discovered that the ramp defect is more stable in the twisted bilayer graphene compared to the mezzanine defect. Chapter 6 presents the results of ab initio DFT calculations performed to investigate a form of extending defect, prismatic edge dislocation. Suarez-Martinez et al.’s research suggest the armchair core is disconnected from any other layer, whilst the zigzag core is connected. In the investigation here, the curvature of the mezzanine defect allows it to swing between the armchair, zigzag and Klein in the AA stacking. For the AB stacking configuration, the armchair and zigzag core are connected from any other layer. Chapter 7 present results of MD simulations using the adaptive intermolecular reactive empirical bond order (AIREBO) potential to investigate the dimensional change of graphite due to the formation of vacancies present in a single crystal. It has been identified that there is an expansion along the c-axis, whilst a contraction along the a- and b- axes due to the coalescence of vacancy forming in-plane and between the layers. The results here are in good agreement with experimental studies of low temperature irradiation. The final chapter gives conclusions to this work.
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Weight, Braden Michael. "Inspection of Excited State Properties in Defected Carbon Nanotubes from Multiple Exciton Generation to Defect-Defect Interactions." Thesis, North Dakota State University, 2020. https://hdl.handle.net/10365/31784.

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Covalent SP3-hybridization defects in single-walled carbon nanotubes (CNTs) have been prevalent in recent experimental and theoretical studies for their interesting photophysical properties. These systems are able to act as excellent sources of single, infrared photons, even at room temperature, making them marketable for applications to sensing, telecommunications, and quantum information. This work was motivated by recent experimental studies on controllable defect placement and concentration as well as investigating carrier multiplication (CM) using DFT-based many-body perturbation theory (MBPT) methods to describe excitonic relaxation processes. We find that pristine CNTs do not yield appreciable MEG at the minimum threshold of twice the optical gap 2Eg, but covalent functionalization allows for improved MEG at the threshold. Finally, we see that defect-defect interactions within CNT systems can be modeled simply as HJ-aggregates in an effective Hamiltonian model, which is shown to be valid for certain, highly-redshifted defect configurations at low defect-defect separation lengths.
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Dogo, Harun. "Point defect properties in iron chromium alloys." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2006. http://library.nps.navy.mil/uhtbin/hyperion/06Sep%5FDogo.pdf.

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Thesis (M.S. in Applied Physics)--Naval Postgraduate School, September 2006.
Thesis Advisor(s): Craig Smith, Xavier Maruyama. "September 2006." Includes bibliographical references (p. 57-59). Also available in print.
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Ashley, Nicholas J. "Defect Properties of Binary Non-Oxide Ceramics." Thesis, Imperial College London, 2009. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.520879.

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Smith, A. G. H. "Structural and defect properties of strontium titanate." Thesis, University College London (University of London), 2012. http://discovery.ucl.ac.uk/1344085/.

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Strontium titanate is a material of considerable interest, with many applications. Though it has been extensively studied experimentally and computationally, there are unresolved issues regarding the structure and defect properties. Experimental examination is challenging due to the propensity of the material to form small domains. Even when single crystals are available, the observed behaviour is an average of these local domains. In this thesis we undertook an extensive computational investigation of strontium titanate. The material is known to undergo a second order phase transition from cubic (Pm-3m) to tetragonal (I4/mcm) at ~105 K. We began the investigation by examining the tetragonal phase. Using plane-wave DFT with the LDA, PBE and PBEsol density functionals, we mapped out in three dimensions the I4/mcm space group and fitted the resultant potential energy surfaces to polynomials. Extensive analysis was performed and expectation values for the 0 K octahedral rotation angle were calculated as being between 4.6° and 6.1° for the three functionals. We continued by carrying out an extensive study, where we examined many different low symmetry saddle points, and minima using the PBEsol functional (which was found to have produced the best results). A total of 38 structures (many of which are unique) were examined in detail and the vibrational and imaginary modes involved in the transitions between higher and lower symmetry structures were identified and described. We identified the lowest energy structure as being monoclinic, with a rhombohedral structure at slightly higher energy. We also note that, as the energy differences are so small between these lower symmetry structures (~0.1 meV per formula unit), it is unlikely that these phases will appear in nature. In the final results chapter we present three new sets of classical pair potentials for modelling strontium titanate. We applied these potentials to model vacancy type defects and investigated the transition pathway for oxygen and strontium migration between adjacent sites. We calculated migration barriers of between 0.96 and 1.35 eV for oxygen and between 3.17 and 3.20 eV for strontium, which are improved estimates over previous pair potential results.
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Wilson, Daniel John. "Defect and surface properties of the silver halides." Thesis, University College London (University of London), 2005. http://discovery.ucl.ac.uk/1446536/.

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In this thesis, state-of-the-art density functional theory calculations have been performed to study a number of properties of the rocksalt-structured silver halides which can broadly be defined as photographically-relevant. These involve point defects and their interaction with free electrons and holes, created upon excitation by actinic light. In our initial calculations, we studied the primary intrinsic point defects within the bulk of the material, in both charged and neutral forms, using the supercell technique. We have correctly predicted the dominance of the Frenkel defect in both AgCl and AgBr, and have found that the lowest energy configuration for the interstitial cation defect in both materials involved a second cation, forming a Ag22+ split-interstitial species, orientated in a 111 direction. We then extended this work by applying a hybrid QM/MM embedding technique to model two systems: the first represented the ideal (100) surface, while the second represented a 'realistic' finite cluster. With the first, we have calculated defect structures and formation energies on the flat surface, and have examined the well-known space-charge layer. With our finite cluster, we studied extended surface defects (steps, kinks etc.) and their interaction with individual point defects. We have also calculated trap depths, and the localisation of holes and electrons at each of the sites. We have determined that, regardless of their location, an electron diffusely localises around the interstitial cation and strongly localises on the anion vacancy, while the corresponding hole becomes trapped around the cation vacancy on a nearest-neighbour cation. However, overall, we consider the positive kink on the surface to be the most likely electron trap, due to its relative abundance and its position within the band gap. Finally, we have investigated the properties of the latent pre-image centre, which plays a key role in the photographic process.
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Bruce, J. M. "Self-diffusion and point defect studies in plastic crystals." Thesis, University of Strathclyde, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.382256.

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Shi, Hongting. "Defect structure and optical properties of alkaline earth fluorides." Doctoral thesis, [S.l.] : [s.n.], 2007. http://deposit.ddb.de/cgi-bin/dokserv?idn=984572015.

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Chirkov, Andrey S., and Andrei V. Nazarov. "N-body potentials in simulation of point defect properties." Universitätsbibliothek Leipzig, 2016. http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-195230.

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Chirkov, Andrey, and Andrei Nazarov. "N-body potentials in simulation of point defect properties." Universitätsbibliothek Leipzig, 2016. http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-194546.

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This work is devoted to simulation of the diffusion features of point defects in bcc metals. The properties of point defects have been investigated with the usage of many-body interatomic potentials. This approach, based on the density-functional theory, permitted us to derive more adequate diffusion features of solids. The investigation is carried out within the framework of the Finnis-Sinclair formalism, developed for an assembly of N atoms and represents the second-moment approximation of the tight-binding theory. We used a new model, based on the molecular static method for simulating the atomic structure near the defect and vacancy migration in pure metals. This approach gives the opportunity to simulate the formation and the migration volumes of the point defects, taking into consideration the influence of pressure on structure and consequently on energy. The diffusion characteristics of bcc α-Fe and anomalous β-Zr have been simulated. The preliminary results of this research were presented and taken for publishing on the international conference “Diffusion in solids” (DiSo-2005) in May 2005.
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Books on the topic "Defect properties"

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Gundtoft, Hans Erik. Examination of Fibre Composites by Ultrasound for Defect Inspection and Determination of Material Properties. Roskilde, Denmark: Riso National Laboratory, 1988.

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P, George Easo, Materials Research Society, and Materials Research Society Meeting, eds. Defect properties and related phenomena in intermetallic alloys: Symposium held December 3-5, 2002, Boston, Massachusetts, U.S.A. Warrendale, Pa: Materials Research Society, 2003.

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Defects in solids. Hoboken, NJ: Wiley, 2008.

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O, Mason Thomas, Routbort Jules L, and American Ceramic Society Meeting, eds. Point defects and related properties of ceramics. Westerville, Ohio: American Ceramic Society, 1991.

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Chikawa, J., K. Sumino, and K. Wada, eds. Defects and Properties of Semiconductors. Dordrecht: Springer Netherlands, 1986. http://dx.doi.org/10.1007/978-94-009-4766-5.

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Varotsos, Panayiotis A. Thermodynamics of point defects and their relation with bulk properties. Amsterdam: North-Holland, 1986.

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Ban, Adrian I. Defects of properties in mathematics: Quantitative characterizations. Singapore: World Scientific, 2002.

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Schüle, W. About properties of point defects in metals. Luxembourg: Commission of the European Communities, 1986.

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Kikoin, K. A. Transition metal impurities in semiconductors: Electronic structure and physical properties. Singapore: World Scientific, 1994.

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Lecture notes on equilibrium point defects and thermophysical properties of metals. Singapore: World Scientific, 2000.

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Book chapters on the topic "Defect properties"

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Hartog, H. W. "Spectroscopic Properties of Defect Solids." In Defects and Disorder in Crystalline and Amorphous Solids, 435–55. Dordrecht: Springer Netherlands, 1994. http://dx.doi.org/10.1007/978-94-011-1942-9_20.

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M.N.N., Miranda, and M. A. Silva. "Moisture Effective Diffusivity in Porous Media with Different Physical Properties." In Defect and Diffusion Forum, 207–12. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/3-908451-36-1.207.

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Zarbout, Kamel, Gérard Moya, Jean Bernardini, Denise Moya-Siesse, A. Si Ahmed, Jerzy Kansy, and Dominique Gœuriot. "Consequences of Silicon Segregation on the Dielectric Properties of Sintered Alumina." In Defect and Diffusion Forum, 281–0. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/3-908451-17-5.281.

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Schweiger, H., R. Podloucky, W. Püschl, M. Spanl, and W. Pfeiler. "Point Defect Energies in L12-Ordered Ni3Al." In Properties of Complex Inorganic Solids 2, 187–97. Boston, MA: Springer US, 2000. http://dx.doi.org/10.1007/978-1-4615-1205-9_15.

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Abo-Elsoud, M., and H. Ismail. "Effect of γ-Irradiation on the Mechanical Properties of Al-Cu Alloy." In Defect and Diffusion Forum, 105–10. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/3-908451-28-0.105.

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Dubinin, N. E., L. D. Son, and N. A. Vatolin. "Thermodynamic Properties of Liquid Binary Transition-Metal Alloys in the Bretonnet-Silbert Model." In Defect and Diffusion Forum, 105–10. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-35-3.105.

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Harvey, J. F., E. H. Poindexter, D. C. Morton, F. C. Rong, R. A. Lux, and R. Tsu. "Porous Silicon Electroluminescence Mechanisms and Defect Analysis." In Optical Properties of Low Dimensional Silicon Structures, 179–90. Dordrecht: Springer Netherlands, 1993. http://dx.doi.org/10.1007/978-94-011-2092-0_21.

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Eror, Nicholas G. "Defect Structure and Transport Properties of Titanates." In Transport in Nonstoichiometric Compounds, 505–16. Boston, MA: Springer US, 1985. http://dx.doi.org/10.1007/978-1-4613-2519-2_38.

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Meng, Xiang Ti, Qiang Huang, Xing Yu Wang, Yong Nan Zheng, Ping Fan, and Sheng Yun Zhu. "Change of Properties of CMOS Image Sensor Irradiated with 9 and 16 MeV Protons." In Defect and Diffusion Forum, 7–14. Stafa: Trans Tech Publications Ltd., 2008. http://dx.doi.org/10.4028/3-908451-54-x.7.

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Ugaste, Ü., Tony Laas, and T. Škled-Gorbatšova. "The Influence of Thermodynamic Properties of Alloys on Effective Interdiffusion Coefficients in Ternary Systems." In Defect and Diffusion Forum, 141–46. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-35-3.141.

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Conference papers on the topic "Defect properties"

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Dewald, James L. "Defect Analysis of Carbon Nanotubes." In ELECTRONIC PROPERTIES OF NOVEL NANOSTRUCTURES: XIX International Winterschool/Euroconference on Electronic Properties of Novel Materials. AIP, 2005. http://dx.doi.org/10.1063/1.2103855.

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Pandey, Chhama, Ramesh Sharma, and Yamini Sharma. "Thermoelectric properties of defect chalcopyrites." In DAE SOLID STATE PHYSICS SYMPOSIUM 2016. Author(s), 2017. http://dx.doi.org/10.1063/1.4980633.

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Stehr, J. E., M. Devika, N. Koteeswara Reddy, C. W. Tu, W. M. Chen, and I. A. Buyanova. "Defect properties of ZnO nanowires." In INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013: Proceedings of the 27th International Conference on Defects in Semiconductors, ICDS-2013. AIP Publishing LLC, 2014. http://dx.doi.org/10.1063/1.4865651.

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Pathak, Nimai, Suryansh Saxena, and R. M. Kadam. "Defect mediated optical properties in ZnAl2O4 phosphor." In DAE SOLID STATE PHYSICS SYMPOSIUM 2017. Author(s), 2018. http://dx.doi.org/10.1063/1.5029048.

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Pfeiffer, R. "Defect Free Inner Tubes in DWCNTs." In MOLECULAR NANOSTRUCTURES: XVII International Winterschool Euroconference on Electronic Properties of Novel Materials. AIP, 2003. http://dx.doi.org/10.1063/1.1628038.

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Bogoboyashchyy, V. V. "Defect structure and diffusion of defects in narrow-gap Hg 1-x Cd x Te crystals." In Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, edited by Fiodor F. Sizov, Johanna V. Gumenjuk-Sichevska, and Sergey A. Kostyukevych. SPIE, 2003. http://dx.doi.org/10.1117/12.502286.

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Mannodi-Kanakkithodi, Arun, Michael Toriyama, Fatih G. Sen, Michael J. Davis, Robert F. Klie, and Maria K. Y. Chan. "Machine learning defect properties in Cd-based chalcogenides." In 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC). IEEE, 2019. http://dx.doi.org/10.1109/pvsc40753.2019.8981266.

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Robertson, J., and Y. Guo. "Defect Properties and Materials Selection for Oxide RRAM." In 2015 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2015. http://dx.doi.org/10.7567/ssdm.2015.o-3-3.

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Nowotny, M. K., T. Bak, and J. Nowotny. "Defect disorder and semiconducting properties of titanium dioxide." In SPIE Optics + Photonics, edited by Lionel Vayssieres. SPIE, 2006. http://dx.doi.org/10.1117/12.674549.

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"Defect Engineering to Optimize Properties in Transparent Conductors." In SVC TechCon 2016. Society of Vacuum Coaters, 2016. http://dx.doi.org/10.14332/svc16.proc.0003.

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Reports on the topic "Defect properties"

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Van Vechten, James A., and John F. Wager. Point Defects in Semiconductors: Microscopic Identification, Metastable Properties, Defect Migration, and Diffusion. Fort Belvoir, VA: Defense Technical Information Center, March 1989. http://dx.doi.org/10.21236/ada206947.

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Allen, P. G., and W. G. Wolfer. Review of Calculations on Point Defect Properties in Delta-Pu. Office of Scientific and Technical Information (OSTI), September 2015. http://dx.doi.org/10.2172/1223841.

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Andersson, Anders David Ragnar, Christopher Richard Stanek, Mark J. Noordhoek, Theodore M. Besmann, Simon C. Middleburgh, E. J. Lahoda, Aleksandr Chernatynskiy, and Robin W. Grimes. Modeling defect and fission gas properties in U-Si fuels. Office of Scientific and Technical Information (OSTI), April 2017. http://dx.doi.org/10.2172/1352406.

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Andersson, Anders David Ragnar, Christopher Richard Stanek, Mark Noordhoek, Theodore Besmann, Simon C. Middleburgh, E. J. Lahoda, Aleksandr Chernatynskiy, and Robin W. Grimes. Modeling defect and fission gas properties in U-Si fuels. Office of Scientific and Technical Information (OSTI), April 2017. http://dx.doi.org/10.2172/1356094.

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Andersson, Anders David. Density functional theory calculations of defect and fission gas properties in U-Si fuels. Office of Scientific and Technical Information (OSTI), February 2016. http://dx.doi.org/10.2172/1237246.

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Groeneveld, Andrew B., Stephanie G. Wood, and Edgardo Ruiz. Estimating Bridge Reliability by Using Bayesian Networks. Engineer Research and Development Center (U.S.), February 2021. http://dx.doi.org/10.21079/11681/39601.

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Abstract:
As part of an inspection, bridge inspectors assign condition ratings to the main components of a bridge’s structural system and identify any defects that they observe. Condition ratings are necessarily somewhat subjective, as they are influenced by the experience of the inspectors. In the current work, procedures were developed for making inferences on the reliability of reinforced concrete girders with defects at both the cross section and the girder level. The Bayesian network (BN) tools constructed in this work use simple structural m echanics to model the capacity of girders. By using expert elicitation, defects observed during inspection are correlated with underlying deterioration mechanisms. By linking these deterioration mechanisms with reductions in mechanical properties, inferences on the reliability of a bridge can be made based on visual observation of defects. With more development, this BN tool can be used to compare conditions of bridges relative to one another and aid in the prioritization of repairs. However, an extensive survey of bridges affected by deterioration mechanisms is needed to confidently establish valid relationships between deterioration severity and mechanical properties.
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Eastman, Micah. Properties of Carbon Nanotubes: Defects, Adsorbates, and Gas Sensing. Portland State University Library, January 2000. http://dx.doi.org/10.15760/etd.5659.

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Bastea, S. Determining thermochemical properties of halogenated metals: On enabling the rapid assessment of agent defeat formulations. Office of Scientific and Technical Information (OSTI), June 2014. http://dx.doi.org/10.2172/1149562.

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Armstrong, Andrew M., Sylvie Aubry, Eric Arthur Shaner, Michael P. Siegal, Qiming Li, Reese E. Jones, Tyler Westover, et al. Impact of defects on the electrical transport, optical properties and failure mechanisms of GaN nanowires. Office of Scientific and Technical Information (OSTI), September 2010. http://dx.doi.org/10.2172/991531.

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Zaug, J. M., S. Bastea, E. Stavrou, M. R. Armstrong, J. C. Crowhurst, and H. B. Radousky. Determining thermochemical properties of halogenated metals: On enabling the rapid assessment of agent defeat formulations. Office of Scientific and Technical Information (OSTI), July 2015. http://dx.doi.org/10.2172/1241983.

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