Relevant bibliographies by topics / Defect recombination

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Defect recombination'

Author: Grafiati
Published: 21 December 2024

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Journal articles on the topic "Defect recombination"

1

Saeed, Faisal, Muhammad Haseeb Khan, Haider Ali Tauqeer, et al. "Numerical Investigation of Photo-Generated Carrier Recombination Dynamics on the Device Characteristics for the Perovskite/Carbon Nitride Absorber-Layer Solar Cell." Nanomaterials 12, no. 22 (2022): 4012. http://dx.doi.org/10.3390/nano12224012.

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The nitrogenated holey two-dimensional carbon nitride (C2N) has been efficaciously utilized in the fabrication of transistors, sensors, and batteries in recent years, but lacks application in the photovoltaic industry. The C2N possesses favorable optoelectronic properties. To investigate its potential feasibility for solar cells (as either an absorber layer/interface layer), we foremost detailed the numerical modeling of the double-absorber-layer–methyl ammonium lead iodide (CH3NH3PbI3) –carbon nitride (C2N) layer solar cell and subsequently provided in-depth insight into the active-layer-asso
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Lausch, Dominik, Ronny Bakowskie, Michael Lorenz, S. Schweizer, Kai Petter, and Christian Hagendorf. "Classification of Recombination-Active Defects in Multicrystalline Solar Cells Made from Upgraded Metallurgical Grade (UMG) Silicon." Solid State Phenomena 178-179 (August 2011): 88–93. http://dx.doi.org/10.4028/www.scientific.net/ssp.178-179.88.

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In this contribution a classification of recombination active defects in multicrystalline silicon solar cells made from electronic grade (eg) and upgraded metallurgical grade (umg) silicon feedstock is introduced. On a macroscopic scale the classification is performed by using forward and reversed biased electroluminescence imaging (EL / ReBEL) and imaging of sub-band defect luminescence (ELsub). The luminescence behavior due to structural defects already present in the wafer can be divided into two groups based on their recombination and prebreakdown behavior. As a first step towards a more d
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Xu, Xin, Zhenyuan Wu, Zebin Zhao, et al. "First-principles study of detrimental iodine vacancy in lead halide perovskite under strain and electron injection." Applied Physics Letters 121, no. 9 (2022): 092106. http://dx.doi.org/10.1063/5.0107441.

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Vacancy defects are universally regarded to be the main defect that limits the photoelectric conversion efficiency of perovskite solar cells. In perovskite, iodine vacancy dominates the defect proportion due to its low formation energy. However, the defect property of iodine vacancy (VI) is still in dispute. Ideally, the VI defect is considered to be a shallow level defect near conduction band minimum, meaning that it does not act as a Shockley–Read–Hall (SRH) nonradiative recombination center. Herein, we find a direct correlation between compressive strain and VI defect behavior. The compress
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Voronkov, Vladimir V., and Robert Falster. "Light-Induced Boron-Oxygen Recombination Centres in Silicon: Understanding their Formation and Elimination." Solid State Phenomena 205-206 (October 2013): 3–14. http://dx.doi.org/10.4028/www.scientific.net/ssp.205-206.3.

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Lifetime-degrading recombination centres those that emerge in the presence of excess carriers in boron and oxygen containing silicon - show a peculiar dependence on the concentrations of the relevant impurities, B and O, and on the hole concentrationp0(net doping) in materials that contain compensating donors (phosphorus or Thermal Donors) or added Ga acceptors. The data indicate involvement of both substitutional (Bs) and interstitial (Bi) boron atoms in the major recombination centres observed in p-Si. A suggested model ascribes degradation to the presence of a BiBsO latent defect inherited
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Storasta, L., F. H. C. Carlsson, Peder Bergman, and Erik Janzén. "Recombination Enhanced Defect Annealing in 4H-SiC." Materials Science Forum 483-485 (May 2005): 369–72. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.369.

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Recombination enhanced defect annealing of intrinsic defects in 4H-SiC, created by low energy electron irradiation, has been observed. A reduction the defect concentration at temperature lower than the normal annealing temperature of 400º C and 800°C is observed after either above bandgap laser excitation or forward biasing of a pin-diode. The presence of the defects has been studied both electrically and optically using capacitance transient spectroscopy and low temperature photoluminescence. Photoluminescence measurements show that several lines, normally detected after electron irradiation,
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Klein, Paul B., Rachael L. Myers-Ward, Kok Keong Lew, et al. "Temperature Dependence of the Carrier Lifetime in 4H-SiC Epilayers." Materials Science Forum 645-648 (April 2010): 203–6. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.203.

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The temperature dependence of the carrier lifetime was measured in n-type 4H-SiC epilayers of varying Z1/2 deep defect concentrations and layer thicknesses in order to investigate the recombination processes controlling the carrier lifetime in low- Z1/2 material. The results indicate that in more recently grown layers with lower deep defect concentrations, surface recombination tends to dominate over carrier capture by other bulk defects. Low-injection lifetime measurements were also found to provide a convenient method to assess the surface band bending and surface trap density in samples wit
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Пещерова, С. М., Е. Б. Якимов, А. И. Непомнящих та ін. "Зависимость объемных электрофизических свойств мультикремния от параметров разориентации зерен". Физика и техника полупроводников 53, № 1 (2019): 59. http://dx.doi.org/10.21883/ftp.2019.01.46988.8814.

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AbstractThe recombination activity of intragrain defects in multicrystalline silicon is investigated by the electron or laser beam induced current methods. The interrelation of the grain orientation with the character of the distribution of intragrain defects (dislocations and impurity inclusions) and their recombination activity is revealed. The defect grain structure is investigated using various etching procedures to reveal the defects. It is shown that the defect density and distribution in the grains depend on their orientation relative the growth axis. Therefore, it is intragrain defects
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Grant, Nicholas E., Fiacre E. Rougieux, and Daniel Macdonald. "Low Temperature Activation of Grown-In Defects Limiting the Lifetime of High Purity n-Type Float-Zone Silicon Wafers." Solid State Phenomena 242 (October 2015): 120–25. http://dx.doi.org/10.4028/www.scientific.net/ssp.242.120.

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We investigate the recombination activity of a bulk silicon defect limiting the lifetime of high qualityn-type float-zone (FZ) silicon wafers. By isochronal annealing between 200 and 1100 °C, a defect was found to become activated upon annealing at 450–700 °C, causing an order of magnitude reduction in the bulk lifetime. From photoluminescence imaging, it was evident that recombination active circular patterns were present in these low lifetime samples, suggesting the defect (s) originates from the growth conditions of the ingot. When the samples were passivated by SiNx:H films, a substantial
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Harada, Tomoki, Tetsuo Ikari, and Atsuhiko Fukuyama. "Development of laser heterodyne photothermal displacement method for mapping carrier nonradiative recombination centers in semiconductors." Journal of Applied Physics 131, no. 19 (2022): 195701. http://dx.doi.org/10.1063/5.0085041.

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The laser heterodyne photothermal displacement (LH-PD) method was used to characterize the nonradiative recombination centers of semiconductors, such as defects and deep-lying electronic levels. When a semiconductor surface is irradiated with a modulated continuous wave laser, the irradiated area is periodically heated and expanded owing to the nonradiative recombination of the photoexcited carriers. The LH-PD can measure an absolute value of surface displacement and its time variation at various excitation beam frequencies [Formula: see text]. Si and GaAs substrate samples were used to confir
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Hara, Tomohiko, and Yoshio Ohshita. "Analysis of recombination centers near an interface of a metal–SiO2–Si structure by double carrier pulse deep-level transient spectroscopy." AIP Advances 12, no. 9 (2022): 095316. http://dx.doi.org/10.1063/5.0106319.

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This paper proposes a new double carrier pulse deep-level transient spectroscopy (DC-DLTS) method that is applicable for evaluating metal–insulator–semiconductor (MIS) structures and the recombination centers in carrier-selective contact solar cells. Specifically, this study evaluated recombination characteristics of defects induced in bulk Si near SiO2/Si interfaces by reactive plasma deposition (RPD). In this method, a pulse voltage was first applied to inject majority carriers. Subsequently, a second pulse voltage was applied, which allowed minority carriers to be injected into the MIS stru
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Dissertations / Theses on the topic "Defect recombination"

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Puttisong, Yuttapoom. "Spin-dependent Recombination in GaNAs." Thesis, Linköping University, Linköping University, Department of Physics, Chemistry and Biology, 2009. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-19355.

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<p>Spin filtering properties of novel GaNAs alloys are reported in this thesis. Spin-dependent recombination (SDR) in GaNAs via a deep paramagnetic defect center is intensively studied.  By using the optical orientation photoluminescence (PL) technique, GaNAs is shown to be able to spin filter electrons injected from GaAs, which is a useful functional property for integratition with future electronic devices.  The spin filtering ability is found to degrade in narrow GaNAs quantum well (QW) structures which is attributed to (i) acceleration of band-to-band recombination competing with the SDR p
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Thomas, Mélissa. "Origins of Cellular Lethality Resulting From a Defect in Homologous Recombination in Human Cells." Thesis, université Paris-Saclay, 2021. http://www.theses.fr/2021UPASL027.

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La recombinaison homologue (RH) est impliquée dans la réparation des cassures double brin à l'ADN, et dans la gestion des fourches de réplication bloquées. Rad51 et BRCA2 en sont deux protéines pivots.J'ai montré que l'inhibition de la RH ainsi que la surexpression de Rad51 sont létales dans les cellules humaines, mais qu'un faible nombre de cellules arrivent à survivre. De plus, dans plusieurs cancers, les gènes de la RH sont mutés (BRCA1/2 dans les cancers du sein et de l'ovaire) ou la surexpression d'un gène de la RH est observée. Mon projet a pour but d'identifier les mécanismes et les cau
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Turcu, Mircea Cassian. "Defect energies, band alignments, and charge carrier recombination in polycrystalline Cu(In,Ga)(Se,S)2 alloys." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2004. http://nbn-resolving.de/urn:nbn:de:swb:14-1086247686828-95497.

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This work investigates the defect energies, band alignments, and charge carrier recombination in polycrystalline Cu(In1-xGax)(Se1-ySy)2 chalcopyrite thin films and the interrelationship with the alloy composition. Photoluminescence spectroscopy of investigated Cu-poor Cu(In,Ga)(Se,S)2 layers generally shows broad emission lines with the corresponding maxima shifting towards higher energies under decreasing temperature or under increasing excitation power. Admittance spectroscopy of Cu-poor ZnO/CdS/Cu(In,Ga)(Se,S)2 chalcopyrite devices shows that the activation energies of the dominant defect d
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Turcu, Mircea Cassian. "Defect energies, band alignments, and charge carrier recombination in polycrystalline Cu(In,Ga)(Se,S)2 alloys." Doctoral thesis, Technische Universität Dresden, 2003. https://tud.qucosa.de/id/qucosa%3A24342.

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This work investigates the defect energies, band alignments, and charge carrier recombination in polycrystalline Cu(In1-xGax)(Se1-ySy)2 chalcopyrite thin films and the interrelationship with the alloy composition. Photoluminescence spectroscopy of investigated Cu-poor Cu(In,Ga)(Se,S)2 layers generally shows broad emission lines with the corresponding maxima shifting towards higher energies under decreasing temperature or under increasing excitation power. Admittance spectroscopy of Cu-poor ZnO/CdS/Cu(In,Ga)(Se,S)2 chalcopyrite devices shows that the activation energies of the dominant defect d
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Santos, Samantha Fonseca dos. "Theoretical and computational studies of dissociative recombination of H₃⁺ with low kinetic energy electrons time-independent and time-dependent approach /." Orlando, Fla. : University of Central Florida, 2009. http://purl.fcla.edu/fcla/etd/CFE0002668.

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PATRIZI, LAURA. "ANALYSIS OF B LYMPHOCYTES IN MOUSE MODEL LIGASE IV WITH HYPOMORPHIC MUTATION IN VDJ RECOMBINATION ASSOCIATED WITH GROWTH DEFECT." Doctoral thesis, Università degli Studi di Milano, 2010. http://hdl.handle.net/2434/150193.

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The major mechanism for the repair of DNA doublestrand breaks (DSBs) in mammalian cells is non-homologous end-joining (NHEJ), a process that involves the DNA-dependent protein kinase , XRCC4 and DNA ligase IV. Rodent cells and mice defective in these components are radiation-sensitive and defective in V(D)J-recombination, showing that NHEJ also functions to rejoin DSBs introduced during lymphocyte development. We have generated a knock-in mouse model with a homozygous Lig4 arginine to histidine (R278H) mutation that corresponds to the mutation identified in the first LIG4-deficient patient, wh
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Lam, N. D., S. Kim, J. J. Lee, K. R. Choi, M. H. Doan, and H. Lim. "Enhanced Luminescence of InGaN / GaN Vertical Light Emitting Diodes with an InGaN Protection Layer." Thesis, Sumy State University, 2013. http://essuir.sumdu.edu.ua/handle/123456789/35210.

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We have investigated the effectiveness of a thin n-In0.2Ga0.8N layer inserted in the bottom n-GaN layer of InGaN/GaN blue light emitting diodes (LEDs) for the protection of multiple quantum wells during the laser lift-off process for vertical LED fabrication. The photoluminescence properties of the InGaN/GaN lateral LEDs are nearly identical irrespective of the existence of the n-In0.2Ga0.8N insertion layer in the bottom n-GaN layer. However, such an insertion is found to effectively increase the photoluminescence intensity of the multiple quantum well and the carrier lifetime of the vert
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Turcu, Mircea C. [Verfasser]. "Defect energies, band alignments, and charge carrier recombination in polycrystalline Cu(In,Ga)(Se,S)2 alloys / Mircea C Turcu." Aachen : Shaker, 2004. http://d-nb.info/1170529550/34.

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Steingrube, Silke [Verfasser]. "Recombination models for defects in silicon solar cells / Silke Steingrube." Hannover : Technische Informationsbibliothek und Universitätsbibliothek Hannover (TIB), 2011. http://d-nb.info/1015460577/34.

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RUCCI, FRANCESCA. "Murine models of hypomorphic defects of v(d)j recombination." Doctoral thesis, Università degli Studi di Milano, 2009. http://hdl.handle.net/2434/155853.

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V(D)J recombination is the process by which the subgenic elements of T and B cell receptors are assembled. The Rag1 and Rag2 proteins initiate this process by cleaving the DNA, whereas the Non Homologous End-Joining pathway (that includes Ku70/80, XRCC4, LigIV, DNA-PKcs and Cernunnos)mediates DNA joining. Rag1 and Rag2 null mutations cause SCID with complete lack of T and B lymphocytes in humans. Hypomorphic mutations that reduce, but do not abrogate, V(D)J recombination activity, may lead to Omenn syndrome (OS) or to “leaky SCID”, both of which are characterized by activated, anergic and auto
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Books on the topic "Defect recombination"

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Orton, J. W. The electrical characterization of semiconductors: Measurement of minority carrier properties. Academic Press, 1990.

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Davidson, J. A. Minority carrier processes and recombination at point and extended defects in silicon. UMIST, 1996.

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Multiphonon Recombination at Defects in Semiconductors. University of Cambridge ESOL Examinations, 2002.

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Orton, J. W., and P. Blood. The Electrical Characterization of Semiconductors: Measurement of Minority Carrier Properties (Techniques of Physics). Academic Press, 1992.

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Voll, Reinhard E., and Barbara M. Bröker. Innate vs acquired immunity. Oxford University Press, 2013. http://dx.doi.org/10.1093/med/9780199642489.003.0048.

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The innate and the adaptive immune system efficiently cooperate to protect us from infections. The ancient innate immune system, dating back to the first multicellular organisms, utilizes phagocytic cells, soluble antimicrobial peptides, and the complement system for an immediate line of defence against pathogens. Using a limited number of germline-encoded pattern recognition receptors including the Toll-like, RIG-1-like, and NOD-like receptors, the innate immune system recognizes so-called pathogen-associated molecular patterns (PAMPs). PAMPs are specific for groups of related microorganisms
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Book chapters on the topic "Defect recombination"

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Storasta, L., F. H. C. Carlsson, J. Peder Bergman, and Erik Janzén. "Recombination Enhanced Defect Annealing in 4H-SiC." In Materials Science Forum. Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-963-6.369.

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Redfield, David. "Recombination-Enhanced Defect Formation and Annealing in a-Si:H." In Disordered Semiconductors. Springer US, 1987. http://dx.doi.org/10.1007/978-1-4613-1841-5_67.

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Takagi, Hidekazu. "Extension of the Quantum Defect Theory and Its Application to Electron and Molecular Ion Collisions." In Dissociative Recombination of Molecular Ions with Electrons. Springer US, 2003. http://dx.doi.org/10.1007/978-1-4615-0083-4_17.

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Marino, F., S. Gialanella, and R. Delorenzo. "Defect Recombination Phenomena in Melt-Spun Ordered Alloys of the Fe-Al System." In Ordering and Disordering in Alloys. Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-011-2886-5_16.

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van der Burg, Mirjam, Andrew R. Gennery, and Qiang Pan-Hammarström. "Class-Switch Recombination Defects." In Humoral Primary Immunodeficiencies. Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-91785-6_15.

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Durandy, A., and Sven Kracker. "Immunoglobulin Class Switch Recombination Defects." In Encyclopedia of Medical Immunology. Springer New York, 2020. http://dx.doi.org/10.1007/978-1-4614-8678-7_34.

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Durandy, A., and S. Kracker. "Immunoglobulin Class Switch Recombination Defects." In Encyclopedia of Medical Immunology. Springer New York, 2019. http://dx.doi.org/10.1007/978-1-4614-9209-2_34-1.

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Bryant, Helen E., and Sydney Shall. "Synthetic Lethality with Homologous Recombination Repair Defects." In Cancer Drug Discovery and Development. Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-14151-0_13.

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Kracker, Sven, Pauline Gardës, and Anne Durandy. "Inherited Defects of Immunoglobulin Class Switch Recombination." In Advances in Experimental Medicine and Biology. Springer New York, 2010. http://dx.doi.org/10.1007/978-1-4419-6448-9_15.

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Wilshaw, P. R., T. S. Fell, and G. R. Booker. "Recombination at Dislocations in Silicon and Gallium Arsenide." In Point and Extended Defects in Semiconductors. Springer US, 1989. http://dx.doi.org/10.1007/978-1-4684-5709-4_18.

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Conference papers on the topic "Defect recombination"

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Benchiheb, Nedjoua, Asma Benchiheb, Yasmina Saidi, and Hamza Lidjici. "Emitter Thickness and Solar Cell Efficiency: The Role of Deep-Level Defects and Auger Recombination." In 2024 3rd International Conference on Advanced Electrical Engineering (ICAEE). IEEE, 2024. https://doi.org/10.1109/icaee61760.2024.10783184.

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Seghier, D., T. M. Arinbjarnason, and H. P. Gislason. "Deep-defect related generation-recombination noise in GaAs." In 2004 13th International Conference on Semiconducting and Insulating Materials. IEEE, 2004. http://dx.doi.org/10.1109/sim.2005.1511426.

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Lee, Jin Hee, and Je-Hyung Kim. "Point and planar defect complex in SiC nanowires for high-performance quantum emitters." In Integrated Photonics Research, Silicon and Nanophotonics. Optica Publishing Group, 2022. http://dx.doi.org/10.1364/iprsn.2022.iw2b.5.

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We investigate SiC nanowires that host point defects coupled to a few-layered stacking fault. These point-planar defect complexes exhibit outstanding optical properties of high brightness, fast recombination time, and a high Debye-Waller factor.
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Khaital, Yu L., Joseph Salzman, and R. Beserman. "Kinetics of gradual degradation in semiconductor lasers." In OSA Annual Meeting. Optica Publishing Group, 1988. http://dx.doi.org/10.1364/oam.1988.mj7.

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Gradual degradation in semiconductor lasers is caused by the creation and migration of point defects which require jumping of atoms from their initial position to disordered ones (with activation energy E a of a few electron volts). The injection of a nonequilibrium electron-hole plasma may increase the probability of structural changes and reduce their activation energy by δE ≃ F c − F v through nonradiative recombination1 (F c and F v are the quasi-Fermi levels). Such enhancement is possible only if the recombination is synchronized with the atom jump event, and the released energy δE is loc
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Bonfiglió, A., M. Vanzi, M. B. Casu, F. Magistrali, M. Maini, and G. Salmini. "Interpretation of Sudden Failures in Pump Laser Diodes." In ISTFA 1997. ASM International, 1997. http://dx.doi.org/10.31399/asm.cp.istfa1997p0189.

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Abstract The occurrence of sudden failures has been reported for 980 nm SL SQW InGaAs pump lasers. The post-mortem analysis reveals failure modes that are consistent with the formation of defects at the active area. The problem calls for two separate efforts: monitoring the degradation at suitable time resolution and structural characterization of defects. This article reports about the optical power and overall voltage monitoring results during a constant current lifetest, in which "sudden failures" switched off the lasers in a few hours, after 1500 hours of regular life, and about their inte
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Lee, Jin Hee, and Je-Hyung Kim. "Strong Zero-Phonon Transition from Defects in SiC Nanowires with Stacking Faults." In Quantum 2.0. Optica Publishing Group, 2023. http://dx.doi.org/10.1364/quantum.2023.qw2a.27.

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We study SiC nanowires that host point defects coupled to a few-layered stacking fault. These point-planar defect complexes exhibit outstanding optical properties of high brightness, fast recombination time, and a high Debye-Waller factor.
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Askari, Syed Sadique Anwer, Manoj Kumar, and Mukul Kumar Das. "Effects of Interface defect on the performance of ZnO/p-Si heterojunction solar cell." In JSAP-OSA Joint Symposia. Optica Publishing Group, 2017. http://dx.doi.org/10.1364/jsap.2017.6p_a410_12.

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The study and optimization of emitter zinc oxide/crystalline silicon heterointerface with a focus on recombination has been identified as the most important issue to fully utilize the potential of ZnO/Si heterojunction solar cell [1]. ZnO/Si interface properties are very crucial to the performance of solar cell due to the fact that the interface is located inside the space charge region. Front surface recombination of Si or the interface recombination velocity of ZnO/Si interface is the most important parameter in this simulation that dictates the efficiency of solar cell. It is known that the
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Verezub, N., and A. Prostomolotov. "DEFECT FORMATION IN DISLOCATION-FREE SILICON SINGLE CRYSTALS." In Mathematical modeling in materials science of electronic component. LCC MAKS Press, 2022. http://dx.doi.org/10.29003/m3091.mmmsec-2022/132-135.

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The physical concepts of defect formation processes in dislocation-free silicon single crystals are discussed. Mathematical models of these processes are considered for various temperature ranges realized during their growth. Near the crystallization temperature, the processes of fast recombination and transfer of intrinsic point defects (vacancies and interstitial silicon atoms) are considered in detail, the calculation results of which are verified by the experimental data of the carrier lifetime map in a silicon single crystal 150 mm in diameter grown by Czochralski method
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Racko, J., R. Granzner, P. Benko, et al. "Model of coupled defect level recombination with participation of multiphonons." In 2014 10th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM). IEEE, 2014. http://dx.doi.org/10.1109/asdam.2014.6998674.

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Gfroerer, T. H., P. R. Simov, B. A. West, and M. W. Wanlass. "Defect-related trapping and recombination in metamorphic GaAs0.72P0.28 grown on GaAs." In 2008 33rd IEEE Photovolatic Specialists Conference (PVSC). IEEE, 2008. http://dx.doi.org/10.1109/pvsc.2008.4922904.

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Reports on the topic "Defect recombination"

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Schild, David, and Claudia Wiese. Overexpressed of RAD51 suppresses recombination defects: a possible mechanism to reverse genomic instability. Office of Scientific and Technical Information (OSTI), 2009. http://dx.doi.org/10.2172/983266.

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