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Relevant bibliographies by topics / Defects and doping of semiconductors

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Academic literature on the topic 'Defects and doping of semiconductors'

Author: Grafiati

Published: 4 June 2021

Last updated: 14 February 2022

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Journal articles on the topic "Defects and doping of semiconductors"

1

Gösele, Ulrich M., and Teh Y. Tan. "Point Defects and Diffusion in Semiconductors." MRS Bulletin 16, no. 11 (1991): 42–46. http://dx.doi.org/10.1557/s0883769400055512.

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Semiconductor devices generally contain n- and p-doped regions. Doping is accomplished by incorporating certain impurity atoms that are substitutionally dissolved on lattice sites of the semiconductor crystal. In defect terminology, dopant atoms constitute extrinsic point defects. In this sense, the whole semiconductor industry is based on controlled introduction of specific point defects. This article addresses intrinsic point defects, ones that come from the native crystal. These defects govern the diffusion processes of dopants in semiconductors. Diffusion is the most basic process associated with the introduction of dopants into semiconductors. Since silicon and gallium arsenide are the most widely used semiconductors for microelectronic and optoelectronic device applications, this article will concentrate on these two materials and comment only briefly on other semiconductors.A main technological driving force for dealing with intrinsic point defects stems from the necessity to simulate dopant diffusion processes accurately. Intrinsic point defects also play a role in critical integrated circuit fabrication processes such as ion-implantation or surface oxidation. In these processes, as well as during crystal growth, intrinsic point defects may agglomerate and negatively impact the performance of electronic or photovoltaic devices. If properly controlled, point defects and their agglomerates may also be used to accomplish positive goals such as enhancing device performance or processing yield.

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2

Mehrer, Helmut. "Diffusion and Point Defects in Elemental Semiconductors." Diffusion Foundations 17 (July 2018): 1–28. http://dx.doi.org/10.4028/www.scientific.net/df.17.1.

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Elemental semiconductors play an important role in high-technology equipment used in industry and everyday life. The first transistors were made in the 1950ies of germanium. Later silicon took over because its electronic band-gap is larger. Nowadays, germanium is the base material mainly for γ-radiation detectors. Silicon is the most important semiconductor for the fabrication of solid-state electronic devices (memory chips, processors chips, ...) in computers, cellphones, smartphones. Silicon is also important for photovoltaic devices of energy production.Diffusion is a key process in the fabrication of semiconductor devices. This chapter deals with diffusion and point defects in silicon and germanium. It aims at making the reader familiar with the present understanding rather than painstakingly presenting all diffusion data available a good deal of which may be found in a data collection by Stolwijk and Bracht [1], in the author’s textbook [2], and in recent review papers by Bracht [3, 4]. We mainly review self-diffusion, diffusion of doping elements, oxygen diffusion, and diffusion modes of hybrid foreign elements in elemental semiconductors.Self-diffusion in elemental semiconductors is a very slow process compared to metals. One of the reasons is that the equilibrium concentrations of vacancies and self-interstitials are low. In contrast to metals, point defects in semiconductors exist in neutral and in charged states. The concentrations of charged point defects are therefore affected by doping [2 - 4].

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3

Bai, Jin Rui, and Rui Xiang Hou. "The Study of Surface Morphology and Roughness of Silicon Wafers Treated by Plasma." Materials Science Forum 980 (March 2020): 88–96. http://dx.doi.org/10.4028/www.scientific.net/msf.980.88.

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Plasma is generally used for the doping of semiconductors. During plasma doping process, plasma interacts with the surface of semiconductor. As a result, defects are induced in the surface region. In this work, the surface morphology and roughness of silicon wafer caused by plasma treatment is studied by use of atom force microscope (AFM). It is found that, during the plasma process, each of the processing time of plasma, location of silicon wafer in plasma and the way of placement of silicon wafer has an influence on the surface morphology and roughness and the reason is discussed. The interaction between plasma and the surface of silicon wafer is qualitatively discussed.

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4

Boscherini, Federico, D. De Salvador, G. Bisognin, and G. Ciatto. "New Opportunities to Study Defects by Soft X-Ray Absorption Fine Structure." Solid State Phenomena 131-133 (October 2007): 473–78. http://dx.doi.org/10.4028/www.scientific.net/ssp.131-133.473.

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X-ray absorption fine structure can determine the local structure of most atoms in the periodic table. The great recent improvements in the performance of synchrotron radiation sources and techniques and advances in the simulations of the spectra have opened new opportunities, especially in the study of dilute systems in the soft X-ray range. In this contribution we will show some recent results that demonstrate how semiconductor physics may greatly benefit from such progress. In fact, doping or alloying of semiconductors with light elements, that have K absorption edges in the soft X-ray range, is widely employed to tune semiconductor properties. X-ray absorption fine structure investigations on such systems can give an important contribution towards the understanding and optimization of technological processes.

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5

Li, Bang Lin, Hao Lin Zou, Hong Qun Luo, David Tai Leong, and Nian Bing Li. "Layered MoS2 defect-driven in situ synthesis of plasmonic gold nanocrystals visualizes the planar size and interfacial diversity." Nanoscale 12, no. 22 (2020): 11979–85. http://dx.doi.org/10.1039/d0nr02838j.

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MoS<sub>2</sub> edge and planar defects guide the spontaneous growth of plasmonic gold nanostructures, contributing to the homogeneous doping of semiconductors on metal nanocrystals with modulated optical characteristics.

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6

REDFIELD, DAVID. "DEFECTS IN AMORPHOUS Si:H — THE REHYBRIDIZED TWO-SITE (RTS) MODEL." Modern Physics Letters B 05, no. 14n15 (1991): 933–39. http://dx.doi.org/10.1142/s0217984991001167.

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A comprehensive model for the metastable defects in amorphous Si:H is developed by adapting a recent theory for several kinds of defects in crystalline semiconductors, particularly the DX center in AlGaAs. This new model accounts in a unified way for all of the major observations of defects induced by light, quenching, doping, or compensation; as well as for their anneal. The stretched-exponential time dependence of defect densities with light exposure or annealing, and saturation of the density are also explained. This model is based on foreign atoms rather than on breaking of Si-Si bonds, and in undoped materials it is suggested that unintentional impurities are the source.

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7

Ge, Xiang-Hong, Xing-Xing Ding, Bao-He Yuan, Xian-Sheng Liu, Yong-Guang Cheng, and Er-Jun Liang. "AC Impedence Properties of Multifunction Ceramics ZrScMo2VO12." Science of Advanced Materials 13, no. 4 (2021): 615–19. http://dx.doi.org/10.1166/sam.2021.3966.

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Alternating current (AC) impedance properties of negative expansion material ZrScMo2VO12 are studied with electrochemical impedance spectroscopy. The conductivity is measured as 2.49×10-4 Ohm-1cm-1K at 673 K and 4.15×10-4 Ohm-1cm-1K at 773 K. We have also elucidated that the conduction of ZrScMo2VO12 come from defects and the co-doping of N and P type in semiconductors. The Schottky defect and Frenkel defect in the material lead to O2- ion conduction, and co-doping leads to electron conduction. And the grain boundary barrier could limit the conduction of electron and hole. This work may be useful for the application exploration of ZrScMo2VO12 in fuel cell and corresponding energy conversion fields.

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8

Lien, Der-Hsien, Shiekh Zia Uddin, Matthew Yeh, et al. "Electrical suppression of all nonradiative recombination pathways in monolayer semiconductors." Science 364, no. 6439 (2019): 468–71. http://dx.doi.org/10.1126/science.aaw8053.

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Defects in conventional semiconductors substantially lower the photoluminescence (PL) quantum yield (QY), a key metric of optoelectronic performance that directly dictates the maximum device efficiency. Two-dimensional transition-metal dichalcogenides (TMDCs), such as monolayer MoS2, often exhibit low PL QY for as-processed samples, which has typically been attributed to a large native defect density. We show that the PL QY of as-processed MoS2 and WS2 monolayers reaches near-unity when they are made intrinsic through electrostatic doping, without any chemical passivation. Surprisingly, neutral exciton recombination is entirely radiative even in the presence of a high native defect density. This finding enables TMDC monolayers for optoelectronic device applications as the stringent requirement of low defect density is eased.

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9

MIMILA-ARROYO, J., and S. W. BLAND. "HYDROGEN CO-DOPING IN III-V SEMICONDUCTORS: DOPANT PASSIVATION AND CARBON REACTIVATION KINETICS IN C-GaAs." Modern Physics Letters B 15, no. 17n19 (2001): 585–92. http://dx.doi.org/10.1142/s0217984901002063.

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Hydrogen in semiconductors is an electrically active impurity whose interaction with lattice point defects and impurities, might produce a strong modification on their physical behavior, changing some material properties, influencing as well, device performance. In this work we will review the main effects of hydrogen co-doping on the properties crystalline semiconductors, discuss on the driving force on the process of hydrogen incorporation in carbon doped GaAs, growth in the presence of hydrogen. A detailed model on the carbon reactivation kinetics, carbon doping efficiency and carbon-hydrogen complexes behavior in MOCVD-GaAs epitaxial layers will be presented. Finally, we will discuss the probable relation between the beta evolution of the high frequency and high power n-GaInP/p-GaAs/n-GaAs hetero-junction bipolar transistor (HBT), and the hydrogen co-doping of the C:GaAs, constituting its base.

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10

Pearton, S. J., C. R. Abernathy, G. T. Thaler, et al. "Effects of defects and doping on wide band gap ferromagnetic semiconductors." Physica B: Condensed Matter 340-342 (December 2003): 39–47. http://dx.doi.org/10.1016/j.physb.2003.09.003.

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