Journal articles: 'Defects and doping of semiconductors'

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Gösele, Ulrich M., and Teh Y. Tan. "Point Defects and Diffusion in Semiconductors." MRS Bulletin 16, no. 11 (1991): 42–46. http://dx.doi.org/10.1557/s0883769400055512.

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Semiconductor devices generally contain n- and p-doped regions. Doping is accomplished by incorporating certain impurity atoms that are substitutionally dissolved on lattice sites of the semiconductor crystal. In defect terminology, dopant atoms constitute extrinsic point defects. In this sense, the whole semiconductor industry is based on controlled introduction of specific point defects. This article addresses intrinsic point defects, ones that come from the native crystal. These defects govern the diffusion processes of dopants in semiconductors. Diffusion is the most basic process associated with the introduction of dopants into semiconductors. Since silicon and gallium arsenide are the most widely used semiconductors for microelectronic and optoelectronic device applications, this article will concentrate on these two materials and comment only briefly on other semiconductors.A main technological driving force for dealing with intrinsic point defects stems from the necessity to simulate dopant diffusion processes accurately. Intrinsic point defects also play a role in critical integrated circuit fabrication processes such as ion-implantation or surface oxidation. In these processes, as well as during crystal growth, intrinsic point defects may agglomerate and negatively impact the performance of electronic or photovoltaic devices. If properly controlled, point defects and their agglomerates may also be used to accomplish positive goals such as enhancing device performance or processing yield.

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Mehrer, Helmut. "Diffusion and Point Defects in Elemental Semiconductors." Diffusion Foundations 17 (July 2018): 1–28. http://dx.doi.org/10.4028/www.scientific.net/df.17.1.

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Elemental semiconductors play an important role in high-technology equipment used in industry and everyday life. The first transistors were made in the 1950ies of germanium. Later silicon took over because its electronic band-gap is larger. Nowadays, germanium is the base material mainly for γ-radiation detectors. Silicon is the most important semiconductor for the fabrication of solid-state electronic devices (memory chips, processors chips, ...) in computers, cellphones, smartphones. Silicon is also important for photovoltaic devices of energy production.Diffusion is a key process in the fabrication of semiconductor devices. This chapter deals with diffusion and point defects in silicon and germanium. It aims at making the reader familiar with the present understanding rather than painstakingly presenting all diffusion data available a good deal of which may be found in a data collection by Stolwijk and Bracht [1], in the author’s textbook [2], and in recent review papers by Bracht [3, 4]. We mainly review self-diffusion, diffusion of doping elements, oxygen diffusion, and diffusion modes of hybrid foreign elements in elemental semiconductors.Self-diffusion in elemental semiconductors is a very slow process compared to metals. One of the reasons is that the equilibrium concentrations of vacancies and self-interstitials are low. In contrast to metals, point defects in semiconductors exist in neutral and in charged states. The concentrations of charged point defects are therefore affected by doping [2 - 4].

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Bai, Jin Rui, and Rui Xiang Hou. "The Study of Surface Morphology and Roughness of Silicon Wafers Treated by Plasma." Materials Science Forum 980 (March 2020): 88–96. http://dx.doi.org/10.4028/www.scientific.net/msf.980.88.

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Plasma is generally used for the doping of semiconductors. During plasma doping process, plasma interacts with the surface of semiconductor. As a result, defects are induced in the surface region. In this work, the surface morphology and roughness of silicon wafer caused by plasma treatment is studied by use of atom force microscope (AFM). It is found that, during the plasma process, each of the processing time of plasma, location of silicon wafer in plasma and the way of placement of silicon wafer has an influence on the surface morphology and roughness and the reason is discussed. The interaction between plasma and the surface of silicon wafer is qualitatively discussed.

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Boscherini, Federico, D. De Salvador, G. Bisognin, and G. Ciatto. "New Opportunities to Study Defects by Soft X-Ray Absorption Fine Structure." Solid State Phenomena 131-133 (October 2007): 473–78. http://dx.doi.org/10.4028/www.scientific.net/ssp.131-133.473.

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X-ray absorption fine structure can determine the local structure of most atoms in the periodic table. The great recent improvements in the performance of synchrotron radiation sources and techniques and advances in the simulations of the spectra have opened new opportunities, especially in the study of dilute systems in the soft X-ray range. In this contribution we will show some recent results that demonstrate how semiconductor physics may greatly benefit from such progress. In fact, doping or alloying of semiconductors with light elements, that have K absorption edges in the soft X-ray range, is widely employed to tune semiconductor properties. X-ray absorption fine structure investigations on such systems can give an important contribution towards the understanding and optimization of technological processes.

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Li, Bang Lin, Hao Lin Zou, Hong Qun Luo, David Tai Leong, and Nian Bing Li. "Layered MoS2 defect-driven in situ synthesis of plasmonic gold nanocrystals visualizes the planar size and interfacial diversity." Nanoscale 12, no. 22 (2020): 11979–85. http://dx.doi.org/10.1039/d0nr02838j.

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MoS<sub>2</sub> edge and planar defects guide the spontaneous growth of plasmonic gold nanostructures, contributing to the homogeneous doping of semiconductors on metal nanocrystals with modulated optical characteristics.

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REDFIELD, DAVID. "DEFECTS IN AMORPHOUS Si:H — THE REHYBRIDIZED TWO-SITE (RTS) MODEL." Modern Physics Letters B 05, no. 14n15 (1991): 933–39. http://dx.doi.org/10.1142/s0217984991001167.

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A comprehensive model for the metastable defects in amorphous Si:H is developed by adapting a recent theory for several kinds of defects in crystalline semiconductors, particularly the DX center in AlGaAs. This new model accounts in a unified way for all of the major observations of defects induced by light, quenching, doping, or compensation; as well as for their anneal. The stretched-exponential time dependence of defect densities with light exposure or annealing, and saturation of the density are also explained. This model is based on foreign atoms rather than on breaking of Si-Si bonds, and in undoped materials it is suggested that unintentional impurities are the source.

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Ge, Xiang-Hong, Xing-Xing Ding, Bao-He Yuan, Xian-Sheng Liu, Yong-Guang Cheng, and Er-Jun Liang. "AC Impedence Properties of Multifunction Ceramics ZrScMo2VO12." Science of Advanced Materials 13, no. 4 (2021): 615–19. http://dx.doi.org/10.1166/sam.2021.3966.

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Alternating current (AC) impedance properties of negative expansion material ZrScMo2VO12 are studied with electrochemical impedance spectroscopy. The conductivity is measured as 2.49×10-4 Ohm-1cm-1K at 673 K and 4.15×10-4 Ohm-1cm-1K at 773 K. We have also elucidated that the conduction of ZrScMo2VO12 come from defects and the co-doping of N and P type in semiconductors. The Schottky defect and Frenkel defect in the material lead to O2- ion conduction, and co-doping leads to electron conduction. And the grain boundary barrier could limit the conduction of electron and hole. This work may be useful for the application exploration of ZrScMo2VO12 in fuel cell and corresponding energy conversion fields.

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Lien, Der-Hsien, Shiekh Zia Uddin, Matthew Yeh, et al. "Electrical suppression of all nonradiative recombination pathways in monolayer semiconductors." Science 364, no. 6439 (2019): 468–71. http://dx.doi.org/10.1126/science.aaw8053.

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Defects in conventional semiconductors substantially lower the photoluminescence (PL) quantum yield (QY), a key metric of optoelectronic performance that directly dictates the maximum device efficiency. Two-dimensional transition-metal dichalcogenides (TMDCs), such as monolayer MoS2, often exhibit low PL QY for as-processed samples, which has typically been attributed to a large native defect density. We show that the PL QY of as-processed MoS2 and WS2 monolayers reaches near-unity when they are made intrinsic through electrostatic doping, without any chemical passivation. Surprisingly, neutral exciton recombination is entirely radiative even in the presence of a high native defect density. This finding enables TMDC monolayers for optoelectronic device applications as the stringent requirement of low defect density is eased.

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MIMILA-ARROYO, J., and S. W. BLAND. "HYDROGEN CO-DOPING IN III-V SEMICONDUCTORS: DOPANT PASSIVATION AND CARBON REACTIVATION KINETICS IN C-GaAs." Modern Physics Letters B 15, no. 17n19 (2001): 585–92. http://dx.doi.org/10.1142/s0217984901002063.

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Hydrogen in semiconductors is an electrically active impurity whose interaction with lattice point defects and impurities, might produce a strong modification on their physical behavior, changing some material properties, influencing as well, device performance. In this work we will review the main effects of hydrogen co-doping on the properties crystalline semiconductors, discuss on the driving force on the process of hydrogen incorporation in carbon doped GaAs, growth in the presence of hydrogen. A detailed model on the carbon reactivation kinetics, carbon doping efficiency and carbon-hydrogen complexes behavior in MOCVD-GaAs epitaxial layers will be presented. Finally, we will discuss the probable relation between the beta evolution of the high frequency and high power n-GaInP/p-GaAs/n-GaAs hetero-junction bipolar transistor (HBT), and the hydrogen co-doping of the C:GaAs, constituting its base.

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10

Pearton, S. J., C. R. Abernathy, G. T. Thaler, et al. "Effects of defects and doping on wide band gap ferromagnetic semiconductors." Physica B: Condensed Matter 340-342 (December 2003): 39–47. http://dx.doi.org/10.1016/j.physb.2003.09.003.

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Medvedeva, Julia E., and Bishal Bhattarai. "Hydrogen doping in wide-bandgap amorphous In–Ga–O semiconductors." Journal of Materials Chemistry C 8, no. 43 (2020): 15436–49. http://dx.doi.org/10.1039/d0tc03370g.

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Microscopic mechanisms of the formation of H defects and their role in passivation of under-coordinated atoms, short- and long-range structural transformations, and the resulting electronic properties of amorphous In–Ga–O with In : Ga = 6 : 4 are investigated using computationally-intensive ab initio molecular dynamics simulations and accurate density-functional calculations.

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Lysochenko, S. V., Yu S. Zharkikh, O. G. Kukharenko, O. V. Tretiak, and M. G. Tolmachov. "Hall Study of Conductive Channels Formed in Germanium by Beams of High-Energy Light Ions." Ukrainian Journal of Physics 66, no. 1 (2021): 62. http://dx.doi.org/10.15407/ujpe66.1.62.

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The implantation of the high-energy ions of H+ or He+ in germanium leads to the creation of buried conductive channels in its bulk with equal concentrations of acceptor centers. These centers are the structure defects of the crystal lattice which arise in the course of deceleration of high-energy particles. This method of introducing electrically active defects is similar to the doping of semiconductors by acceptor-type impurities. It has been established that the density of defects increases with the implantation dose till ≈5×10^15 cm−2. The further increase of the implantation dose does not affect the level of doping. In the range of applied doses (10^12–6×10^16) cm−2, the Hall mobility of holes in the formed conducting channels is practically independent of the implanted dose and is about (2-3)×10^4 cm2/Vs at 77 K. The doping ofthe germanium by high-energy ions of H+ or He+ to obtain conducting regions with high hole mobility can be used in the microelectronics technology.

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Jäger, Wolfgang. "Diffusion and Defect Phenomena in III-V Semiconductors and their Investigation by Transmission Electron Microscopy." Diffusion Foundations 17 (July 2018): 29–68. http://dx.doi.org/10.4028/www.scientific.net/df.17.29.

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This article reviews the studies of diffusion and defect phenomena induced by high-concentration zinc diffusion in the single-crystal III-V compound semiconductors GaAs, GaP, GaSb and InP by methods of transmission electron microscopy and their consequences for numerical modelling of Zn (and Cd) diffusion concentration profiles. Zinc diffusion from the vapour phase into single-crystal wafers has been chosen as a model case for interstitial-substitutional dopant diffusion in these studies. The characteristics of the formation of diffusion-induced extended defects and of the temporal evolution of the defect microstructure correlate with the experimentally determined Zn profiles whose shapes depend on the chosen diffusion conditions. General phenomena observed for all semiconductors are the formation of dislocation loops, precipitates, voids, and dislocations and of Zn-rich precipitates in the diffusion regions. The formation of extended defects near the diffusion front can be explained as result of point defect supersaturations generated by interstitial-substitutional zinc exchange via the kick-out mechanism. The defects may act as sinks for dopants and as sources and sinks for point defects during the continuing diffusion process, thereby providing a path to establishing defect-mediated local point defect equilibria. The investigations established a consistent picture of the formation and temporal evolution of defects and the mechanisms of zinc diffusion in these semiconductors for diffusion conditions leading to high-concentration Zn concentrations. Based on these results, numerical modelling of anomalously shaped dopant concentration profiles leads to satisfactory quantitative results and yields information on type and charge states of the point defect species involved, also for near-surface Zn concentration profiles and the absence of extended defects.

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14

Peng, Qing, Nanjun Chen, Danhong Huang, Eric Heller, David Cardimona, and Fei Gao. "First-Principles Assessment of the Structure and Stability of 15 Intrinsic Point Defects in Zinc-Blende Indium Arsenide." Crystals 9, no. 1 (2019): 48. http://dx.doi.org/10.3390/cryst9010048.

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Point defects are inevitable, at least due to thermodynamics, and essential for engineering semiconductors. Herein, we investigate the formation and electronic structures of fifteen different kinds of intrinsic point defects of zinc blende indium arsenide (zb-InAs ) using first-principles calculations. For As-rich environment, substitutional point defects are the primary intrinsic point defects in zb-InAs until the n-type doping region with Fermi level above 0.32 eV is reached, where the dominant intrinsic point defects are changed to In vacancies. For In-rich environment, In tetrahedral interstitial has the lowest formation energy till n-type doped region with Fermi level 0.24 eV where substitutional point defects In A s take over. The dumbbell interstitials prefer < 110 > configurations. For tetrahedral interstitials, In atoms prefer 4-As tetrahedral site for both As-rich and In-rich environments until the Fermi level goes above 0.26 eV in n-type doped region, where In atoms acquire the same formation energy at both tetrahedral sites and the same charge state. This implies a fast diffusion along the t − T − t path among the tetrahedral sites for In atoms. The In vacancies V I n decrease quickly and monotonically with increasing Fermi level and has a q = − 3 e charge state at the same time. The most popular vacancy-type defect is V I n in an As-rich environment, but switches to V A s in an In-rich environment at light p-doped region when Fermi level below 0.2 eV. This study sheds light on the relative stabilities of these intrinsic point defects, their concentrations and possible diffusions, which is expected useful in defect-engineering zb-InAs based semiconductors, as well as the material design for radiation-tolerant electronics.

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15

Lombos, B. A. "Deep levels in semiconductors." Canadian Journal of Chemistry 63, no. 7 (1985): 1666–71. http://dx.doi.org/10.1139/v85-279.

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The role of deep-lying trapping centers in semi-insulating GaAs, polysilicon and polycrystalline tin oxide transparent electrode has been systematically investigated. It was demonstrated that some of the peculiar transport properties of these semiconductors can be elucidated by deep level compensation. A multilevel model is presented to determine the position of the Fermi level as a function of impurity concentrations. These include, quantitatively, the deep-lying levels which have been introduced by doping in the case of GaAs and by grain boundaries in the case of polycrystalline films. In the latter cases the dangling bonds, associated to lattice defects, are characterized by energy levels which are localized in the energy gap. These dangling bonds can act as electron traps when empty and hole traps when occupied. These are the deep levels.In each of the investigated three cases, this concept permitted the elucidation of some of the transport properties of these semiconductors.

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Keßler, P., K. Lorenz, and R. Vianden. "Implanted Impurities in Wide Band Gap Semiconductors." Defect and Diffusion Forum 311 (March 2011): 167–79. http://dx.doi.org/10.4028/www.scientific.net/ddf.311.167.

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Wide band gap semiconductors, mainly GaN, have experienced much attention due to their application in photonic devices and high-power or high-temperature electronic devices. Especially the synthesis of InxGa1-xN alloys has been studied extensively because of their use in LEDs and laser diodes. Here, In is added during the growth process and devices are already very successful on a commercial scale. Indium in nitride ternary and quaternary alloys plays a special role; however, the mechanisms leading to more efficient light emission in In-containing nitrides are still under debate. Therefore, the behaviour of In in GaN and AlN, the nitride semiconductor with the largest bandgap is an important field of study. In is also an important impurity in another wide band gap semiconductor – the II-VI compound ZnO where it acts as an n-type dopant. In this context the perturbed angular correlation technique using implantation of the probe111In is a unique tool to study the immediate lattice environment of In in the wurtzite lattice of these wide band gap semiconductors. For the production of GaN and ZnO based electronic circuits one would normally apply the ion implantation technique, which is the most widely used method for selective area doping of semiconductors like Si and GaAs. However, this technique suffers from the fact that it invariably produces severe lattice damage in the implanted region, which in nitride semiconductors has been found to be very difficult to recover by annealing. The perturbed angular correlation technique is employed to monitor the damage recovery around implanted atoms and the properties of hitherto known impurity – defect complexes will be described and compared to proposed structure models.

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Kozlov, V. A., and V. V. Kozlovski. "Doping of semiconductors using radiation defects produced by irradiation with protons and alpha particles." Semiconductors 35, no. 7 (2001): 735–61. http://dx.doi.org/10.1134/1.1385708.

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Liang, Xin Xiang, Zhi Qun Cheng, and Min Shi Jia. "Ballistic Effect and Application in Circuit Design of Wide Band-Gap Semiconductor." Applied Mechanics and Materials 644-650 (September 2014): 3597–600. http://dx.doi.org/10.4028/www.scientific.net/amm.644-650.3597.

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With manufacturing technology innovation and progress of electronic devices of semiconductors, dimensions of electronic devices get smaller nowadays. There has been processing of 90nm and 20nm in production. With in-depth research, scientists are more and more interested in molecular devices. Since the size of molecular devices is small, electrons transfer by ballistic transport. In semiconductor devices, when the transport distance is at micrometer or smaller sizes, the ballistic transport phenomena of electrons and holes of carriers occur. This transfer form is not affected by lattice defects, doping, and interaction of crystal interfaces. Since there is no interference of these interactions, carrier’s velocity can be faster several times than common electronic devices, resulting in the doubled operating speed of these devices. Although it is difficult to achieve pure ballistic transport, when the size of semiconductor devices is close to the mean free path of carriers, the speed of carriers will still be greatly improved.

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Barnett, Joel, Richard Hill, and Prashant Majhi. "Achieving Ultra-Shallow Junctions in Future CMOS Devices by a Wet Processing Technique." Solid State Phenomena 187 (April 2012): 33–36. http://dx.doi.org/10.4028/www.scientific.net/ssp.187.33.

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The continued scaling of CMOS devices to the sub-16 nm technology node will likely be achieved with new architectures, such as FinFETs and high mobility substrates, including compound semiconductors (III-V). At these technology nodes, abrupt channel doping profiles with high dopant activation will be needed under low thermal budget environments for III-V materials. Ion implantation into III-V materials presents a problem as it induces crystal damage, which can alter the stoichiometry in a manner that is difficult to recover. The residual damage can lead to higher junction leakage and lower dopant activation. This paper presents a potentially defect-free alternative, mono-layer doping (MLD), which utilizes wet processing techniques.

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Li, Chun Ping, Hao Ran Ba, and Kun Jin. "Effects of Fe Doping on the Crystal Structures and Photoluminescence of ZnO Nanorods." Key Engineering Materials 636 (December 2014): 105–9. http://dx.doi.org/10.4028/www.scientific.net/kem.636.105.

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The 5% Fe-doped ZnO nanorods (Zn0.95Fe0.05O) were prepared successfully by the wet-chemical synthesis method. Structure and morphology characterization were demonstrated by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Laser power dependent photoluminescence (PL) spectra were measured to study the electronic structures of the Fe-doped ZnO-based diluted magnetic semiconductors. The contraction of lattice constant and structured green-yellow-red emissions were analyzed. Such investigations confirmed that the induced defects or impurities originating from Fe ions.

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Chrobak, Dariusz, Michał Trębala, Artur Chrobak, and Roman Nowak. "Origin of Nanoscale Incipient Plasticity in GaAs and InP Crystal." Crystals 9, no. 12 (2019): 651. http://dx.doi.org/10.3390/cryst9120651.

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In this article, we exhibit the influence of doping on nanoindentation-induced incipient plasticity in GaAs and InP crystals. Nanoindentation experiments carried out on a GaAs crystal show a reduction in contact pressure at the beginning of the plastic deformation caused by an increase in Si doping. Given that the substitutional Si defects cause a decrease in the pressure of the GaAs-I → GaAs-II phase transformation, we concluded that the elastic–plastic transition in GaAs is a phase-change-driven phenomenon. In contrast, Zn- and S-doping of InP crystals cause an increase in contact pressure at the elastic–plastic transition, revealing its dislocation origin. Our mechanical measurements were supplemented by nanoECR experiments, which showed a significant difference in the flow of the electrical current at the onset of plastic deformation of the semiconductors under consideration.

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An, Dao Khac. "Important Features of Anomalous Single-Dopant Diffusion and Simultaneous Diffusion of Multi-Dopants and Point Defects in Semiconductors." Defect and Diffusion Forum 268 (November 2007): 15–36. http://dx.doi.org/10.4028/www.scientific.net/ddf.268.15.

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This paper summarizes some of the main results obtained concerning aspects of anomalous single-dopant diffusion and the simultaneous diffusion of multi-diffusion species in semiconductors. Some important explanations of theoretical/practical aspects have been investigated, such as anomalous phenomena, general diffusivity expressions, general non-linear diffusion equations, modified Arrhenius equations and lowered activation energy have been offered in the case of the anomalous fast diffusion for single-dopant diffusion process. Indeed, a single diffusion process is always a complex system involving many interacting factors; conventional diffusion theory could not be applied to its investigation. The author has also investigated a system of multi-diffusion species with mutual interactions between them. More concretely, irreversible thermodynamics theory was used to investigate the simultaneous diffusion of dopants (As, B) and point defects (V, I) in Si semiconductors. Some attempts at theory development were made, such as setting up a system of general diffusion equations for the simultaneous diffusion of multi-diffusion species involving mutual interactions between them, such as the pair association and disassociation mechanisms which predominated during the simultaneous diffusion of dopants and point defects. The paper then gives some primary results of the numerical solution of distributions of dopants (B, As) and point defects (V, I) in Si semiconductor, using irreversible thermodynamics theory. Finally, several applications of simultaneous diffusion to semiconductor technology devices are also offered.

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Sands, T. "Application of Cross-Sectional Transmission Electron Microscopy to the Characterization of Ion-Implanted Semiconductors." Proceedings, annual meeting, Electron Microscopy Society of America 43 (August 1985): 292–95. http://dx.doi.org/10.1017/s0424820100118357.

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Direct implantation of dopant ions is the most precise method for obtaining a desired dopant profile in a semiconductor substrate. However, in order to achieve satisfactory electrical properties, lattice defects introduced by the energetic dopant ions and by the subsequent annealing process must be confined or eliminated. Because of the many parameters which can be varied during implantation and annealing, it is not generally feasible to survey all conditions. Consequently, the most efficient approach is to understand the mechanisms of defect formation and annealing so that guidelines for choosing a set of implantation/annealing conditions can be determined.Since implantation depths are usually much less than one micron, suitable defect characterization techniques must demonstrate high spatial resolution. Cross-sectional transmission electron microscopy (XTEM) is one such technique. With a resolution (lateral and depth) of ∼0.2nm, the atomic structure of implantation-related defects is accessible.

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Queisser, Hans J. "Order and Disorder in Semiconductors." MRS Bulletin 20, no. 12 (1995): 43–49. http://dx.doi.org/10.1557/s0883769400045899.

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The pervasive impetus of modern semiconductor technology has become an accepted fact. Scientific mastering of materials and processes has increased tremendously within a short time frame. Technological control has been derived from this scientific base. An industry with more than $100 billion worth of silicon devices per annum in 1994 as well as incredibly high growth rates of production and applications is an economic reality in addition to being a matter of international industrial policy. The materials aspect of using perfected single crystals and applying local doping control provides the basis of this unusual success. Earlier usage of materials differed remarkably. Bronze and steel are used for their specific bulk properties. Shaping and connecting pieces is at the heart of iron-age or bronze-age technologies. Integration inside a regular spatial array of a host crystal is the semiconductor principle. The “Royal Road” to modern microelectronics consists of initially procuring a perfected single-crystal host, then locally establishing electrical and optical properties inside the host by specific replacements of host atoms by foreign “dopants.” The somewhat disparaging expression of defect as a generic term for all deviations from the host perfection does not really convey the power of this “doping doctrine” for semiconducting materials. The early pioneers of germanium and silicon however, placed great emphasis on the experimental verification that n-type and p-type doping by elements of the adjacent columns in the periodic table were accompanied by changes in the lattice parameter with atomic substitution of the host atoms as the guiding principle.

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Williams, J. S. "Subsurface Processing of Electronic Materials Assisted by Atomic Displacements." MRS Bulletin 17, no. 6 (1992): 47–51. http://dx.doi.org/10.1557/s0883769400041464.

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In the early years of doping of semiconductors by ion implantation, atomic displacements and residual lattice damage were considered undesirable byproducts of an otherwise controllable doping process. Steps were taken to minimize disorder during implantation and/or to remove it as completely as possible during a subsequent annealing process. In many cases, such as boron- or phosphorus-implanted silicon, annealing temperatures exceeding 900°C were necessary to achieve the desirable electrical properties. Indeed, removal of implantation damage remains a crucial issue, particularly as device dimensions shrink and the need has arisen for substantially lower processing temperatures. The advent of high-energy (MeV) implantation in specific processing steps and the increasing use of more complex (often multilayer) compound semiconductors has added further to the need to understand and control ion damage and its annealing in semiconductors.Over the past decade, there has been a growing realization that implantation induced atomic displacements and defects can have significant advantages in processing. For example, it was realized early that ion damage, and resultant defect fluxes to and from lattice disruptions, can “getter” and trap undesirable impurities that would otherwise interfere with device operation. More recently, it has been possible to use ion beams to tailor damage structures and form amorphous-crystalline superlattices, to remove pre-existing damage and induce crystallization of amorphous layers at very low temperatures, to form ultrapure amorphous silicon for studying thermodynamic properties of this phase, or to mix films with semiconductors and form stable compounds such as silicides. Indeed, ion damage has been used to electrically isolate devices, to form optical waveguides and cavities, and to improve the junction properties of deeply doped layers. These issues are briefly reviewed in this article.

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Sasaki, Shun, Shailesh Madisetti, Vadim Tokranov, et al. "Group III-Sb Metamorphic Buffer on Si for p-Channel all-III-V CMOS: Electrical Properties, Growth and Surface Defects." MRS Proceedings 1790 (2015): 13–18. http://dx.doi.org/10.1557/opl.2015.515.

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ABSTRACTGroup III-Sb compound semiconductors are promising materials for future CMOS circuits. Especially, In1-xGaxSb is considered as a complimentary p-type channel material to n-type In1-xGaxAs MOSFET due to the superior hole transport properties and similar chemical properties in III-Sb’s to those of InGaAs. The heteroepitaxial growth of In1-xGaxSb on Si substrate has significant advantage for volume fabrication of III-V ICs. However large lattice mismatch between InGaSb and Si results in many growth-related defects (micro twins, threading dislocations and antiphase domain boundaries); these defects also act as deep acceptor levels. Accordingly, unintentional doping in InGaSb films causes additional scattering, increase junction leakages and affects the interface properties. In this paper, we studied the correlations between of defects and hole carrier densities in GaSb and strained In1-xGaxSb quantum well layers by using various designs of metamorphic superlattice buffers.

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Bublik, Vladimir T., Marina I. Voronova, and Kirill D. Shcherbachev. "Capabilities of X-ray diffuse scattering method for study of microdefects in semiconductor crystals." Modern Electronic Materials 4, no. 4 (2018): 125–34. http://dx.doi.org/10.3897/j.moem.4.4.47197.

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The capabilities of X-ray diffuse scattering (XRDS) method for the study of microdefects in semiconductor crystals have been overviewed. Analysis of the results has shown that the XRDS method is a highly sensitive and information valuable tool for studying early stages of solid solution decomposition in semiconductors. A review of the results relating to the methodological aspect has shown that the most consistent approach is a combination of XRDS with precision lattice parameter measurements. It allows one to detect decomposition stages that cannot be visualized using transmission electron microscopy (TEM) and moreover to draw conclusions as to microdefect formation mechanisms. TEM-invisible defects that are coherent with the matrix and have smeared boundaries with low displacement field gradients may form due to transmutation doping as a result of neutron irradiation and relaxation of disordered regions accompanied by redistribution of point defects and annihilation of interstitial defects and vacancies. For GaP and InP examples, a structural microdefect formation mechanism has been revealed associated with the interaction of defects forming during the decomposition and residual intrinsic defects. Analysis of XRDS intensity distribution around the reciprocal lattice site and the related evolution of lattice constant allows detecting different decomposition stages: first, the formation of a solution of Frenkel pairs in which concentration fluctuations develop, then the formation of matrix-coherent microdefects and finally coherency violation and the formation of defects with sharp boundaries. Fundamentally, the latter defects can be precipitating particles. Study of the evolution of diffuse scattering iso-intensity curves in GaP, GaAs(Si) and Si(O) has allowed tracing the evolution of microdefects from matrix-coherent ones to microdefects with smeared coherency resulting from microdefect growth during the decomposition of non-stoichiometric solid solutions heavily supersaturated with intrinsic (or impurity) components.

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Gracia-Espino, E., F. López-Urías, H. Terrones, and M. Terrones. "Doping (10, 0)-Semiconductor Nanotubes with Nitrogen and Vacancy Defects." Materials Express 1, no. 2 (2011): 127–35. http://dx.doi.org/10.1166/mex.2011.1014.

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Kazmi, Jamal, Poh Choon Ooi, Boon Tong Goh, et al. "Bi-doping improves the magnetic properties of zinc oxide nanowires." RSC Advances 10, no. 39 (2020): 23297–311. http://dx.doi.org/10.1039/d0ra03816d.

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Room-temperature ferromagnetism in the large and direct bandgap diluted magnetic semiconductor zinc oxide (ZnO) is attributed to the intrinsic defects and p-orbital–p-orbital (p–p) coupling interaction.

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Justo, J. F., T. M. Schmidt, A. Fazzio, and A. Antonelli. "Segregation of dopant atoms on extended defects in semiconductors." Physica B: Condensed Matter 302-303 (January 2001): 403–7. http://dx.doi.org/10.1016/s0921-4526(01)00462-8.

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CHOI, HEON-JIN, HAN-KYU SEONG, and UNGKIL KIM. "DILUTED MAGNETIC SEMICONDUCTOR NANOWIRES." Nano 03, no. 01 (2008): 1–19. http://dx.doi.org/10.1142/s1793292008000848.

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An idea for simultaneously manipulating spin and charge in a single semiconductor medium has resulted in the development of diluted magnetic semiconductors (DMSs), which exhibits surprisingly room temperature ferromagnetic signatures despite having controversial ferromagnetic origin. However, achievement of truly room temperature ferromagnetism by carrier mediation is still the subject of intense research to develop the practical spin-based devices. Nanowires with one-dimensional nanostructure, which offers thermodynamically stable features and typically single crystalline and defect free, have a number of advantages over thin films with respect to studying ferromagnetism in DMSs. This review focuses primarily on our works on GaN -based DMS nanowires, i.e., Mn -doped GaN , Mn -doped AlGaN and Cu -doped GaN nanowires. These DMS nanowires have room temperature ferromagnetism by the local magnetic moment of doping elements that are in a divalent state and in tetrahedral coordination, thus substituting Ga in the wurtzite-type network structure of host materials. Importantly, our evidences indicate that the magnetism is originated from the ferromagnetic interaction driven by the carrier. These outcomes suggest that nanowires are ideal building blocks to address the magnetism in DMS due to their thermodynamic stability, single crystallinity, free of defects and free standing nature from substrate. Nanowires themselves are ideal building blocks for nanodevices and, thus, it would also be helpful in developing DMS-based spin devices.

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Смагин, В. П., та А. А. Исаева. "Фотолюминесценция низкоразмерных композитных структур полиметилметакрилат/(Zn,Cd,Mn,Eu)S". Журнал технической физики 91, № 5 (2021): 808. http://dx.doi.org/10.21883/jtf.2021.05.50693.291-20.

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A colloidal technology for the synthesis and doping of low-dimensional structures based on zinc and cadmium sulfides directly in the medium of an acrylic monomer is implemented in the process of obtaining optically transparent compositions of polymethylmethacrylate/(Zn,Cd,Mn,Eu)S. It is shown that the photoluminescence of the compositions is associated with a system of levels of structural defects of semiconductor particles located in its band gap, which are formed during successive doping of ZnS and CdS layers with Mn2+ and Eu3+ ions, and with intraband 5D0 → 7F1,2,4 transitions of 4f-electrons of Eu3+ ions. Photoluminescence excitation it occurs as a result of the transition of electrons from the valence band of a semiconductor to the levels of defects in its structure and partial energy transfer to the excited energy levels of Eu3+ ions.

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Смагин, В. П., та А. А. Исаева. "Фотолюминесценция низкоразмерных композитных структур полиметилметакрилат/(Zn,Cd,Mn,Eu)S". Журнал технической физики 91, № 5 (2021): 808. http://dx.doi.org/10.21883/jtf.2021.05.50693.291-20.

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A colloidal technology for the synthesis and doping of low-dimensional structures based on zinc and cadmium sulfides directly in the medium of an acrylic monomer is implemented in the process of obtaining optically transparent compositions of polymethylmethacrylate/(Zn,Cd,Mn,Eu)S. It is shown that the photoluminescence of the compositions is associated with a system of levels of structural defects of semiconductor particles located in its band gap, which are formed during successive doping of ZnS and CdS layers with Mn2+ and Eu3+ ions, and with intraband 5D0 → 7F1,2,4 transitions of 4f-electrons of Eu3+ ions. Photoluminescence excitation it occurs as a result of the transition of electrons from the valence band of a semiconductor to the levels of defects in its structure and partial energy transfer to the excited energy levels of Eu3+ ions.

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Xiang, Gang, and Xi Zhang. "The Co-Doping Effect of Si and Mn on the Dilute Ferromagnetic Semiconductor Thin Films." Advanced Materials Research 233-235 (May 2011): 2624–28. http://dx.doi.org/10.4028/www.scientific.net/amr.233-235.2624.

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The co-doping effect of Si and Mn have been studied in the low temperature grown ferromagnetic semiconductor (Ga,Mn)As thin films. It is found that Si doping decreases the Curie temperatures of the ferromagnetic sample due to carrier compensation and defects formation. The transport studies show that the Si incorporation increases the resistivity of the (Ga,Mn)As thin films, and increase the planar Hall resistance while increases the resistance transitions in the magnetic samples.

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Lee, Seung Hwan, Hongkwan Park, Soyeon Kim, Woohyun Son, In Woo Cheong, and Jung Hyun Kim. "Transparent and flexible organic semiconductor nanofilms with enhanced thermoelectric efficiency." J. Mater. Chem. A 2, no. 20 (2014): 7288–94. http://dx.doi.org/10.1039/c4ta00700j.

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This paper describes a sequential doping/dedoping method for the enhancement of thermoelectric properties of organic semiconductor that also permits the fabrication of transparent and flexible thermoelectric nanofilms. This method allows a precise control of oxidation level without deterioration of the film surface defects.

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Xiang, Gang, and Xi Zhang. "The Effect of Be and Mn Co-Doping on the Magnetic and Transport Properties of Ferromagnetic Semiconductor Thin Films." Advanced Materials Research 239-242 (May 2011): 127–31. http://dx.doi.org/10.4028/www.scientific.net/amr.239-242.127.

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The co-doping effect of Be and Mn have been studied in the ferromagnetic semiconductor (Ga,Mn)As thin films. The measurement of magnetic properties shows that the Be doping decreases the Curie temperatures of the ferromagnetic sample due to defects formation. The transport studies show that the Be incorporation decreases the resistivity of the (Ga,Mn)As thin films. It is found that Be incorporation decreases the planar Hall resistance but increases the resistance transitions in the magnetic samples.

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Wang, Huiru, Jiawei He, Yongye Xu, et al. "Impact of hydrogen dopant incorporation on InGaZnO, ZnO and In2O3 thin film transistors." Physical Chemistry Chemical Physics 22, no. 3 (2020): 1591–97. http://dx.doi.org/10.1039/c9cp05050g.

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Kao, Chyuan-Haur, Yen-Lin Su, Wei-Jen Liao, et al. "Effects of CF4 Plasma Treatment on Indium Gallium Oxide and Ti-doped Indium Gallium Oxide Sensing Membranes in Electrolyte–Insulator–Semiconductors." Crystals 10, no. 9 (2020): 810. http://dx.doi.org/10.3390/cryst10090810.

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Electrolyte–insulator–semiconductor (EIS) sensors, used in applications such as pH sensing and sodium ion sensing, are the most basic type of ion-sensitive field-effect transistor (ISFET) membranes. Currently, some of the most popular techniques for synthesizing such sensors are chemical vapor deposition, reactive sputtering and sol-gel deposition. However, there are certain limitations on such techniques, such as reliability concerns and isolation problems. In this research, a novel design of an EIS membrane consisting of an optical material of indium gallium oxide (IGO) was demonstrated. Compared with conventional treatment such as annealing, Ti doping and CF4 plasma treatment were incorporated in the fabrication of the film. Because of the effective treatment of doping and plasma treatment, the defects were mitigated and the membrane capacitance was boosted. Therefore, the pH sensitivity can be increased up to 60.8 mV/pH. In addition, the hysteresis voltage can be improved down to 2.1 mV, and the drift voltage can be suppressed to as low as 0.23 mV/h. IGO-based membranes are promising for future high-sensitivity and -stability devices integrated with optical applications.

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Ao, Lei, Anh Pham, Xiao Tao Zu, and Sean Li. "Engineering the Electronic and Magnetic Properties of Sc₂CF₂ MXene Material through Vacancy Doping and Lattice Straining." Materials Science Forum 900 (July 2017): 61–64. http://dx.doi.org/10.4028/www.scientific.net/msf.900.61.

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MXenes is a new group of two-dimensional materials via etching of the ‘A’ element from MAX phases. Depending on the functional group, MXenes can be semiconductors or metals. In this paper, first-principles calculations have been performed to investigate the effects of single vacancy defects on a semiconducting MXene, Sc2CF2 monolayer. The theoretical results show that V-Sc can induce magnetism in the host monolayer, while V-C and V-F result in n-type conductivity. For V-Sc doped Sc2CF2, tensile strains enhance the total magnetic moment which remains constant with applied compressive strains. As a result, by manipulating the fabrication parameters, the magnetic and conductive properties of Sc2CF2 can be tuned without the need of chemical doping.

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Yang, Guixia, Kunlin Wu, Jianyong Liu, et al. "Enhanced Low-Neutron-Flux Sensitivity Effect in Boron-Doped Silicon." Nanomaterials 10, no. 5 (2020): 886. http://dx.doi.org/10.3390/nano10050886.

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Space particle irradiation produces ionization damage and displacement damage in semiconductor devices. The enhanced low dose rate sensitivity (ELDRS) effect caused by ionization damage has attracted wide attention. However, the enhanced low-particle-flux sensitivity effect and its induction mechanism by displacement damage are controversial. In this paper, the enhanced low-neutron-flux sensitivity (ELNFS) effect in Boron-doped silicon and the relationship between the ELNFS effect and doping concentration are further explored. Boron-doped silicon is sensitive to neutron flux and ELNFS effect could be greatly reduced by increasing the doping concentration in the flux range of 5 × 109–5 × 1010 n cm−2 s−1. The simulation based on the theory of diffusion-limited reactions indicated that the ELNFS in boron-doped silicon might be caused by the difference in the concentration of remaining vacancy-related defects (Vr) under different neutron fluxes. The ELNFS effect in silicon becomes obvious when the (Vr) is close to the boron doping concentration and decreased with the increase in boron doping concentration due to the remaining vacancy-related defects being covered. These conclusions are confirmed by the p+-n-p Si-based bipolar transistors since the ELNFS effect in the low doping silicon increased the reverse leakage of the bipolar transistors and the common-emitter current gain (β) dominated by highly doped silicon remained unchanged with the decrease in the neutron flux. Our work demonstrates that the ELNFS effect in boron-doped silicon can be well explained by noise diagnostic analysis together with electrical methods and simulation, which thus provide the basis for detecting the enhanced low-particle-flux damage effect in other semiconductor materials.

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Gupta, Akanksha, Rui Zhang, Pramod Kumar, Vinod Kumar, and Anup Kumar. "Nano-Structured Dilute Magnetic Semiconductors for Efficient Spintronics at Room Temperature." Magnetochemistry 6, no. 1 (2020): 15. http://dx.doi.org/10.3390/magnetochemistry6010015.

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In recent years, many efforts have been made to develop advanced metal oxide semiconductor nanomaterials with exotic magnetic properties for modern applications w.r.t traditional analogues. Dilute magnetic semiconductor oxides (DMSOs) are promising candidates for superior control over the charge and spin degrees of freedom. DMSOs are transparent, wide band gap materials with induced ferromagnetism in doping, with a minor percentage of magnetic 3d cation to create a long-range antiferromagnetic order. Although significant efforts have been carried out to achieve DMSO with ferromagnetic properties above room temperature, it is a great challenge that still exists. However, TiO2, SnO2, ZnO and In2O3 with wide band gaps of 3.2, 3.6, 3.2 and 2.92 eV, respectively, can host a broad range of dopants to generate various compositions. Interestingly, a reduction in the size of these binary oxides can induce ferromagnetism, even at room temperature, due to the grain boundary, presence of defects and oxygen vacancies. The present review provides a panorama of the structural analysis and magnetic properties of DMSOs based on binary metal oxides nanomaterials with various ferromagnetic or paramagnetic dopants, e.g., Co, V, Fe and Ni, which exhibit enhanced ferromagnetic behaviors at room temperature.

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Hoàng Văn, Dũng, Anh Tuấn Thanh Phạm, Thư Nguyễn Bảo Lê, Trương Hữu Nguyễn, Thắng Bách Phan, and Vinh Cao Trần. "Investigating the existence of oxygen interstitial in CuCr1􀀀xMgxO2 [0.00 X 0.30] thermoelectric materials by X-Ray photoelectron spectroscopy [XPS]." Science and Technology Development Journal - Natural Sciences 5, no. 2 (2021): first. http://dx.doi.org/10.32508/stdjns.v5i2.973.

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Climate change is promoting researches on materials which is capable of converting environmentally friendly energy, in which materials that convert heat into electricity are receiving significant attention, because their ability of converting heat to electricity not only generates the electricity but also contributes to slow down the consumption of fossil fuel. The existence of point defects in the semiconductors greatly effected properties of materials, especially thermoelectric properties. Therefore, the study of defects in materials is a popular research trend today. In this study, we focus on evaluating the existence of oxygen interstitial in CuCr1􀀀xMgxO2 [0.00 x 0.30] compounds, because oxygen interstitial greatly affected the thermoelectric properties of this material. Based on X-ray photoelectron spectroscopy (XPS) analysis, at the large ratio of Mg impurity x = 0.15, the compound had the highest percentage of oxygen interstitial and was also a good thermoelectric material. In addition, it could be also seen that CuCrO2 material being doped a large Mg doping ratio (x = 0.15) was suitable for thermal-to-electrical applications rather than the ones with a small ratio (x 0.05).

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He, Q. L., S. Y. Li, F. Gao, Z. Zhu, X. Hu, and H. Z. Song. "High temperature thermoelectric properties of Bi2−xNaxSr2Co2Oy ceramics." Modern Physics Letters B 29, no. 27 (2015): 1550159. http://dx.doi.org/10.1142/s0217984915501596.

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The Na doping effects on the high temperature thermoelectric properties of [Formula: see text] ([Formula: see text] = 0, 0.05, 0.10, 0.15, 0.20 and 0.30) ceramics were investigated from 343 K to 973 K. When [Formula: see text], the electrical resistivity of [Formula: see text] decreases with increasing Na doping amount due to the hole-doping effect, which exhibits metallic electrical conductivity behavior. While, at the temperature range of 480–830 K, the samples with [Formula: see text] exhibit semiconductor electrical conductivity behavior instead. The Seebeck coefficients are improved by Na doping at lower temperature, but they decrease slightly at higher temperature except for [Formula: see text]. Roughly, the thermal conductivity is depressed by the doping defects. As an overall result, the dimensionless figure of merit [Formula: see text] of [Formula: see text] reaches the maximum value of 0.3 K at 973 K, which is nearly twice the value of the undoped sample [Formula: see text].

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Смагин, В. П., А. А. Исаева та Н. С. Еремина. "Фотолюминесценция квантовых точек Zn-=SUB=-1-x-y-=/SUB=-Cu-=SUB=-x-=/SUB=-Eu-=SUB=-y-=/SUB=-S/EuL-=SUB=-3-=/SUB=- в полиакрилатной матрице". Журнал технической физики 128, № 5 (2020): 651. http://dx.doi.org/10.21883/os.2020.05.49326.326-19.

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Zinc sulfide is one of the most popular luminescent semiconductors of group A(II)B(VI). Doping ZnS quantum dots with Ln3+ ions makes it possible to form nanoscale structures in a semiconductor matrix containing isolated centers of narrow-band luminescence. The introduction of quantum dots into the acrylate matrix further stabilizes the particles and allows them to form their morphology. Nanoscale structures of Zn1-x-yCuxEuyS/EuL3, where L − trifluoroacetate are anions, were synthesized by the method of emerging reagents in situ in the medium of methyl methacrylate (MMA). ZnS doping was performed by simultaneous introduction of soluble precursors of zinc sulfide, as well as copper and europium trifluoroacetates into the acrylate reaction mixture. Polymer optically transparent compositions of PMMA/Zn1-x-yCuxEuyS/EuL3 were obtained by radical polymerization of MMA in the block. The excitation of luminescence of compositions is associated with Interzone electron transitions in ZnS, with a system of levels that form alloying ions in the forbidden zone of ZnS, as well as with their own energy absorption by Eu3+ ions. Broadband luminescence of compositions is caused by intracrystalline defects formed in ZnS during doping. Narrow-band luminescence occurs as a result OF 5D0→7Fj electronic transitions in Eu3+ ions associated with quantum dots, as well as being in the polymer matrix independently of them. The transfer of energy from the donor levels of the semiconductor matrix to the levels of Eu3+ ions, followed by its release in the form of luminescence, was confirmed by the imposition of absorption bands doped with ZnS and excitation bands of luminescence compositions, as well as an increase in the intensity of narrow-band luminescence of Eu3+ ions while reducing the intensity of a wide band of recombination luminescence of doped ZnS. A decrease in the intensity of the ZnS recombination luminescence band with an increase in the concentration of Eu3+ >1.0∙10-3 mol/L ions is also associated with the formation of a layer of complex europium compounds on the particle surface that prevent the passage of exciting radiation to the particle core.

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Ebert, Ph. "Incorporation of dopant atoms and defects in semiconductors: a microscopic view." Physica B: Condensed Matter 340-342 (December 2003): 1159–65. http://dx.doi.org/10.1016/j.physb.2003.10.005.

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Pearton, Stephen J., and Chihping Kuo. "GaN and Related Materials for Device Applications." MRS Bulletin 22, no. 2 (1997): 17–21. http://dx.doi.org/10.1557/s0883769400032516.

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The addition of GaN, A1N, InN, and related alloys to the family of device-quality semiconductors has opened up new opportunities in short-wavelength (visible and ultraviolet [uv]) photonic devices for display and data-storage applications, solar-blind uv detectors, and high-temperature/high-power electronics. Silicon will of course continue to dominate in microelectronics applications, and InP and GaAs and their related alloys will be the mainstays of long-wavelength lightwave communication systems and red, orange, and yellow light-emitting-diode (LED) technology, respectively. There are however many existing and emerging uses for wide-bandgap semiconductors with good electrical and optical characteristics. The purpose of this issue of MRS Bulletin is to furnish a background and summary on the exciting new developments involving GaN and related materials.Strong efforts on the synthesis and device aspects of GaN took place in the 1960s and 1970s because of the potential for realization of blue lasers and LEDs that would extend the existing wavelength range of photonic devices. Progress was hampered because of several severe materials problems. First there was no bulk crystal growth technology for producing substrates, and epitaxial material was grown on highly lattice-mismatched substrates such as sapphire. This heteroepitaxial material was invariably highly conducting because of residual shallow donor defects or impurities. These high n-type backgrounds, combined with the relatively deep ionization levels of all of the common p-type dopant impurities, prevented the achievement of p-type doping and therefore of bipolar or injection devices.

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Bhowmik, Gourav, Katherine Gruenewald, Girish Malladi, Tyler Mowll, Carl Ventrice, and Mengbing Huang. "Tunable Photoluminescence of Atomically Thin MoS2 via Nb Doping." MRS Advances 4, no. 10 (2019): 609–14. http://dx.doi.org/10.1557/adv.2019.24.

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ABSTRACTThe emergence of 2D materials has led to increased attention on correlating the structural, optical, and optoelectronic properties of atomically thin transition metal chalcogenides like MoS2. We demonstrate the tunability of the photoluminescence (PL) properties of bulk MoS2 via implantation of Nb ions. Raman spectroscopy is used to confirm the p-type doping. The PL intensity of MoS2 is drastically enhanced by the adsorption of p-type dopants. X-ray photoelectron spectroscopy (XPS) is used to study the change of MoS2 structure post-implantation. Our results provide a new route for modulating the optical properties of two-dimensional semiconductors. The strong and stable PL from defect sites of MoS2 created by Nb ion implantation may have promising applications in optoelectronic devices.

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Nishi, Koji, Akihiro Ikeda, Daichi Marui, Hiroshi Ikenoue, and Tanemasa Asano. "n- and p-Type Doping of 4H-SiC by Wet-Chemical Laser Processing." Materials Science Forum 778-780 (February 2014): 645–48. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.645.

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Silicon carbide (SiC) is a promising semiconductor for high-power devices due to its superior material properties; high breakdown field, high electron saturation velocity, and high thermal conductivity. To implement SiC power devices, pn junction must be formed in the SiC. However, ion implantation for impurity doping has several issues for the SiC. For example, while a high-temperature (~1700 °C) post-implantation annealing is required to electrically activate implanted species [, it induces generation of crystallographic defects in the SiC, such as segregation of carbon atoms at the surface from the SiC bulk [. Therefore, development of new technology for local doping of SiC is highly demanded.

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Wang, Shiwei, Weiqiang Bo, Min Zhong, et al. "Effect of Cr Content on the Properties of Magnetic Field Processed Cr-Doped ZnO-Diluted Magnetic Semiconductors." Journal of Nanomaterials 2012 (2012): 1–7. http://dx.doi.org/10.1155/2012/501069.

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Cr-doped ZnO-diluted magnetic semiconductor (DMS) nanocrystals with various Cr contents were synthesized by hydrothermal method under high magnetic field. The result indicated that both the amount of Cr contents and high magnetic field significantly influenced crystal structure, morphology, and magnetic property of Cr-doped ZnO DMSs. When the Cr contents increased from 1 at% to 5 at%, the morphology of grains sequentially changed from flower-like to rod-like and then to the flake-like form. All the samples remained hexagonal wurtzite structure after Cr ions were doped into the ZnO crystal lattice. The Cr doping led to the increasing amount of defects and even enhanced the magnetic property of the matrix materials. All the Cr-doped ZnO DMSs obtained under high magnetic field exhibited obvious ferromagnetic behavior at room temperature. The results have also shown the successful substitution of the Cr3+ions for the Zn2+ions in the crystal lattice.

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MOHANTY, SUNITA, MANORANJAN KAR, and S. RAVI. "FERROMAGNETISM IN MECHANICALLY MILLED PURE SnO2." International Journal of Modern Physics B 27, no. 08 (2013): 1350025. http://dx.doi.org/10.1142/s0217979213500252.

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Pure SnO 2 based wide band gap semiconductors were prepared by mechanical alloying method by using steel and tungsten carbide vials. They were further annealed at 900°C. The XRD patterns could be refined by using P42/ mnm space group with typical lattice parameters a = b = 4.7322 Å and c = 3.1848 Å. The as milled powders obtained from both the vials exhibit room temperature ferromagnetism (FM) without any transition element doping. However upon annealing, the FM was destroyed in one of the samples. The observed FM is explained in terms of oxygen vacancy and defects induced electrons and exchange interaction between them. The ferromagnetic transition temperature obtained from the temperature variation of magnetization was found to be 915 K. The initial magnetization data could be analyzed in terms of bound magnetic polaron model. The resonance field shift in electron spin resonance spectrum is explained in terms of observed ferromagnetism.

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Journal articles on the topic 'Defects and doping of semiconductors'

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