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Dissertations / Theses on the topic 'Defects in semiconductors'

Author: Grafiati

Published: 4 June 2021

Last updated: 15 February 2022

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1

Hong, Sang Jeen. "Real-time malfunction diagnosis and prognosis of reactive ion etching using neural networks." Diss., Available online, Georgia Institute of Technology, 2004:, 2003. http://etd.gatech.edu/theses/available/etd-04082004-180227/unrestricted/hong%5Fsang%5Fj%5F200312%5Fphd.pdf.

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2

Wasenczuk, Adam. "Defects in epitaxial II-VI semiconductors." Thesis, University of Southampton, 1998. https://eprints.soton.ac.uk/426603/.

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3

Cobden, David Henry. "Individual defects in mesoscopic transistors." Thesis, University of Cambridge, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.386908.

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4

Gladney, Dewey Clinton. "Simulating radiation-induced defects on semiconductor devices." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2004. http://library.nps.navy.mil/uhtbin/hyperion/04Sep%5FGladney.pdf.

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5

Doolittle, William Alan. "Fundamental understanding, characterization, passivation and gettering of electrically active defects in silicon." Diss., Georgia Institute of Technology, 1996. http://hdl.handle.net/1853/15710.

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6

Gatti, Fabio Garcia. "Uma contribuição para caracterização de níveis de energia de impurezas em AlxGa1-xAs tipo n." Universidade de São Paulo, 2000. http://www.teses.usp.br/teses/disponiveis/76/76132/tde-05052010-153410/.

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Neste trabalho apresentamos medidas de fotocondutividade, decaimento da fotocondutividade persistente, resistência em função da temperatura em amostras de AlxGa1-xAs de gap direto e indireto, dopadas com Si. Comparamos as teorias de Brooks-Herring e Takimoto, ambas referentes ao espalhamento por impurezas ionizadas, e sua aplicabilidade para nosso material. Interpretamos a presença de um estado de energia intermediário nos cálculos da energia de ativação baseado nos resultados de concentração de elétrons livres em função da temperatura .como devido ao defeito D-. Nos resultados de decaimento d

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7

Höglund, Andreas. "Electronic Structure Calculations of Point Defects in Semiconductors." Doctoral thesis, Uppsala universitet, Fysiska institutionen, 2007. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-7926.

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In this thesis point defects in semiconductors are studied by electronic structure calculations. Results are presented for the stability and equilibrium concentrations of native defects in GaP, InP, InAs, and InSb, for the entire range of doping conditions and stoichiometry. The native defects are also studied on the (110) surfaces of InP, InAs, and InSb. Comparing the relative stability at the surface and in the bulk, it is concluded that the defects have a tendency to migrate to the surface. It is found that the cation vacancy is not stable, but decomposes into an anion antisite-anion vacanc

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8

Höglund, Andreas. "Electronic structure calculations of point defects in semiconductors /." Uppsala : Acta Universitatis Upsaliensis, 2007. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-7926.

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9

Goss, Jonathan Paul. "A first principles study of defects in semiconductors." Thesis, University of Exeter, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.361336.

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10

Ewels, Christopher Paul. "Density functional modelling of point defects in semiconductors." Thesis, University of Exeter, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.388588.

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11

Eberlein, Thomas Andreas Georg. "Point and extended defects in Group IV semiconductors." Thesis, University of Exeter, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.398963.

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12

Elsherif, Osama S. "Electrical characterisation of defects in wide bandgap semiconductors." Thesis, Sheffield Hallam University, 2012. http://shura.shu.ac.uk/19622/.

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Defects usually have a very large influence on the semiconductor material properties and hence on fabricated electronic devices. The nature and properties of defects in semiconducting materials can be investigated by applying electrical characterization techniques such as thermal admittance spectroscopy (TAS), deep level transient spectroscopy (DLTS) and high resolution Laplace-DLTS measurements. This dissertation presents the electrical characterisation of two different wide bandgap semiconducting materials (polycrystalline diamond and GaN) which have both recently attracted a great deal of a

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13

Almrabet, Meftah M. "Electrically active defects in novel Group IV semiconductors." Thesis, Sheffield Hallam University, 2006. http://shura.shu.ac.uk/19253/.

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This thesis presents the electrical characterisation of defects in novel group IV semiconducting materials: semiconducting diamond and silicon germanium (SiGe) virtual substrates. Several methods to clean diamond surfaces are introduced, which lead to the fabrication of a diamond Schottky diode with acceptable characteristics. Current-Voltage (I-V) and Capacitance-Voltage (C-V) measurements were carried out to study the electrical properties of both the diamond and SiGe Schottky diodes. Deep level transient spectroscopy (DLTS) and Laplace DLTS were then carried out to investigate the deep elec

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14

Bertram, Uwe Christoph. "Theoretical studies of Cs impurities in semiconductors." Thesis, University of Cambridge, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.319587.

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15

Claybourn, M. "Transient spectroscopy of II-VI semiconductors." Thesis, Durham University, 1985. http://etheses.dur.ac.uk/9298/.

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DLTS, ODLTS and DLOS have been used to characterise the main deep level trapping centres in some II-VI semiconductors; these were single crystal CdS, (ZnCd)S, CdSe, CdTe and ZnS, and polycrystalline CdS films. Undoped, single crystal CdS contained four electron traps as detected by DLTS, at 0.29eV, 0.41eV, 0.61eV and 0.74eV below the conduction band (CB). The first two were observed in all samples and were due to native defects. The two states of highest energy were found only in material that had been annealed in S or Cd vapours. The 0.61ev level could be photoinduced by illumination at photo

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16

Lui, Mei-ki Pattie. "Acceptor defects in P-type gallium antimonide materials." Click to view the E-thesis via HKUTO, 2005. http://sunzi.lib.hku.hk/hkuto/record/B31648368.

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17

Or, Chun-tat. "Optical characterization of defects in GaN /." Hong Kong : University of Hong Kong, 2001. http://sunzi.lib.hku.hk/hkuto/record.jsp?B23768770.

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18

Sitch, Paul Kirst. "Ab-initio calculations of dislocation related properties in semiconductors." Thesis, University of Exeter, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.240399.

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19

Lui, Mei-ki Pattie, and 雷美琪. "Acceptor defects in P-type gallium antimonide materials." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2005. http://hub.hku.hk/bib/B31648368.

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20

Port, Ruth Isabel. "Structural defects in MOVPE grown CdTe/GaAs." Thesis, Durham University, 1995. http://etheses.dur.ac.uk/5476/.

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This work presents a study of the character and distribution of structural defects in (00l)CdTe buffer layers grown on GaAs substrates by metal organic vapour phase epitaxy (MOVPE). These are of importance as hybrid substrates for the growth of Cd(_x)Hg(1-x)Te (CMT), a prominent infrared detector material. The 14.5% mismatch between CdTe and GaAs leads to a high-density of dislocations at the CdTe/GaAs interface, and threading through the layer. The presence of linear and planar defects is detrimental to the performance of CMT devices and it is desirable to reduce the density of dislocations t

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21

Mui, Wing-ki, and 梅詠琪. "Studies of Ga vacancy related defects in GaSb." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2002. http://hub.hku.hk/bib/B31226541.

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22

Coomer, Byron James Fraser. "A first principles study of radiation defects in semiconductors." Thesis, University of Exeter, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.326953.

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23

Collins, Reuben T. McGill T. C. "Electronic properties of heterostructures and defects in compound semiconductors /." Diss., Pasadena, Calif. : California Institute of Technology, 1985. http://resolver.caltech.edu/CaltechETD:etd-03262008-142511.

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24

Edwardson, Charlene. "Positron studies of defects in thin films and semiconductors." Thesis, University of Bath, 2013. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.577748.

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Positron studies of defects in thin films and semiconductors are reviewed. The results obtained from experimental studies of Doppler broadening of annihilation radiation (DBAR) from variable energies are presented. Normalisation methods for the DBAR parameters S and W have been developed, allowing for direct comparisons of the results for different samples taken over long periods of time. The evaluation of the P:V parameter, the peak-to-valley ratio in a full annihilation spectrum, has been improved via a correction method that produced a fourfold increase in sensitivity to o-Ps annihilation.

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25

Capaz, Rodrigo Barbosa 1968. "Ab initio studies of semiconductors : defects, surfaces and interfaces." Thesis, Massachusetts Institute of Technology, 1996. http://hdl.handle.net/1721.1/10812.

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26

Pi, Xiaodong. "Positron annihilation spectroscopy of sub-surface defects in semiconductors." Thesis, University of Bath, 2003. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.426150.

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27

Sun, Baozhou. "Vibrational lifetimes of hydrogen and oxygen defects in semiconductors." W&M ScholarWorks, 2005. https://scholarworks.wm.edu/etd/1539623477.

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Characterization of defect and impurity reactions, dissociation, and migration in semiconductors requires a detailed understanding of the rates and pathways of vibrational energy flow and of the coupling mechanisms between local modes and the phonon bath of the host material. Information on the inelastic microscopic interaction can be obtained by measuring the lifetime of local vibrational modes. This dissertation presents lifetime measurements of hydrogen and oxygen defects in semiconductors by means of time-resolved infrared pump-probe spectroscopy.;First, we measured the vibrational lifetim

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28

Irvine, A. C. "Lattice defects in As-grown and irradiated GaAs, AlGaAs and InGaGs." Thesis, University of Sussex, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.334991.

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The alloying of two or more semiconducting compounds is a powerful means of tailoring the properties of semiconductor devices, since material parameters generally display a continuous shift with composition. For the same reason, observing the characteristics of a defect across a range of alloys is a useful way of gaining infonnation on the defect's microscopic structure. In this work, Schottky diodes are employed to study lattice defects, both as-grown and created by irradiation, in the alloys AlxGal-~ (O~x~O.27) and InxGal_~ (O~x~O.18), grown by the Metal~rganic Chemical Vapour-phase Depositi

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29

Zhu, Congyong. "Deep level defects study of arsenic implanted ZnO single crystal." Click to view the E-thesis via HKUTO, 2008. http://sunzi.lib.hku.hk/hkuto/record/B40987759.

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30

Zhu, Congyong, and 朱從佣. "Deep level defects study of arsenic implanted ZnO single crystal." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2008. http://hub.hku.hk/bib/B40987759.

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31

柯俊達 and Chun-tat Or. "Optical characterization of defects in GaN." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2001. http://hub.hku.hk/bib/B31226607.

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32

Deane, Steven Charles. "The kinetics and equilibria of defects in hydrogenated amorphous silicon thin film transistors." Thesis, University of Cambridge, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.239729.

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33

Neto, Frederico Ayres de Oliveira. "Propriedades estruturais, eletrônicas e ópticas dos materiais semicondutores \"HgI IND.2\" e \"ZnI IND.2\" e de defeitos em \"HgI IND.2\"." Universidade de São Paulo, 2005. http://www.teses.usp.br/teses/disponiveis/43/43134/tde-05122006-114829/.

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O iodeto de mercúrio em sua fase vermelha, \"alfa\"-\"HgI IND.2, é um material semicondutor que desperta grande interesse tecnológico devido à sua potencial aplicação como detector, a temperatura ambiente, de raios-\"gama\" e X. Sua imediata aplicação como detector de radiação, no entanto, ainda sofre algumas restrições devido às dificuldades de controle sobre a concentração de defeitos pontuais e extensos, durante sua síntese, e sua fácil degradação quando exposto ao ambiente. A presença destes defeitos gera uma redução na mobilidade de portadores de carga, diminuindo a eficiência de detecção

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34

Stehr, Jan Eric [Verfasser]. "Point defects in oxide and nitride semiconductors / Jan Eric Stehr." Gießen : Universitätsbibliothek, 2011. http://d-nb.info/1063178371/34.

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35

Fujita, Naomi. "Modelling of point and extended defects in Group IV semiconductors." Thesis, University of Exeter, 2009. http://hdl.handle.net/10036/90563.

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In this thesis first-principles calculations of point and extended defects in diamond and silicon are reported. In single crystal diamond grown by chemical vapour deposition (CVD) dislocations are observed as mixed-type 45° and edge-type dislocations lying along <100> with 1/2<110> Burgers vectors. Results are presented on the core structures, core energies and electrical properties of both types of dislocations and their interaction with nitrogen is investigated. Then the focus turns to the brown diamond problem. Despite concerted research efforts, the origin of the brown colouration of diamo

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36

Chilton, Neil Barry. "A slow positron implantation spectroscopy study of defects in semiconductors." Thesis, University of East Anglia, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.303017.

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37

Cavaco, Ana Margarida Rocha de Oliveira. "Radiation-induced defects in quantum-size structures of A3B5 semiconductors." Doctoral thesis, Universidade de Aveiro, 2011. http://hdl.handle.net/10773/3728.

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Doutoramento em Física<br>As estruturas quânticas de semicondutores, nomeadamente baseadas em GaAs, têm tido nos últimos vinte anos um claro desenvolvimento. Este desenvolvimento deve-se principalmente ao potencial tecnológico que estas estruturas apresentam. As aplicações espaciais, em ambientes agressivos do ponto de vista do nível de radiação a que os dispositivos estão sujeitos, motivaram todo o desenrolar de estudos na área dos defeitos induzidos pela radiação. As propriedades dos semicondutores e dos dispositivos de semicondutores são altamente influenciadas pela presença de defe

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38

Fell, Timothy S. "A quantitative EBIC study of dislocations and their interaction with impurities in silicon." Thesis, University of Oxford, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.305415.

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39

Boucher, Jason. "Studies of GaAs Solar Cells Grown by Close-Spaced Vapor Transport." Thesis, University of Oregon, 2017. http://hdl.handle.net/1794/22284.

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While photovoltaic (PV) manufacturing is on track to provide a substantial portion of world electricity generation, the growth of the industry is likely to be lower than desired to meet targets designed to mitigate climate change. Many different PV technologies have been developed, but PV modules based on Si are the dominant technology due to its low cost and relatively high energy conversion efficiencies. PV modules based on III-V materials are primarily used for aerospace applications due to their high cost and record-setting efficiencies. Traditional manufacturing techniques for III-V PV re

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40

Leary, Paul William. "A first principles study of light impurities in semiconductors." Thesis, University of Exeter, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.390165.

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41

Armstrong, Andrew M. "Investigation of deep level defects in GaN:C, GaN:Mg and pseudomorphic AlGaN/GaN films." Columbus, Ohio : Ohio State University, 2006. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1164038818.

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42

Dixon, Richard H. "The characterisation of defects in III-V semiconducting compounds by electron microscopy." Thesis, University of Surrey, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.279689.

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43

Beglitis, N. "First-principles studies of surface defects of model metal-oxide semiconductors." Thesis, University College London (University of London), 2011. http://discovery.ucl.ac.uk/1324515/.

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In this thesis, three different model metal-oxide semiconductor systems will be discussed. First, the impact of hydroxyl vacancies, OHvac, on the geometry, electronic structure, and mechanical properties of single-walled aluminosilicate, (Al2SiO7H4)N, and aluminogermanate, (Al2GeO7H4)36, nanotubes is investigated. It is found that, with the exception of one OHvac localised on the outer wall of the (Al2GeO7H4)36 tube, these defects induce occupied and empty states in the band gap. Those states are found to be highly localised both in energy and in real space. Different magnetisation states are

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44

Vasheghani, Farahani Sepehr. "Optical and electronic properties of defects and dopants in oxide semiconductors." Thesis, University of Warwick, 2013. http://wrap.warwick.ac.uk/58463/.

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Interest in semiconductor materials has continually grown over the past 60 years due to their potential use in electronic and optoelectronic device structures. Oxide semiconductors are a particular class of materials that also combine conductivity with optical transparency, properties not usually found in the same material. These transparent conducting oxides (TCOs) have been among the first oxide materials to benefit from the availability of improved epitaxial growth techniques, although perovskite oxides and heterostructures have also proved to be opening a new era of high mobility structure

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45

Al-Abdulmalik, Dana A. "Evolution of vacancy-type defects in semiconductors : a positron annihilation study." Thesis, University of Bath, 2007. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.442881.

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46

Jokela, Slade Joseph. "Stability and structure of hydrogen defects in zinc oxide." Online access for everyone, 2006. http://www.dissertations.wsu.edu/Dissertations/Fall2006/s_jokela_122106.pdf.

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47

Benjamin, Anne Laura. "Scanning Tunneling Microscopy Studies of Defects in Semiconductors: Inter-Defect and Host Interactions of Zn, Er, Mn, V, and Co Single-Atom Defects in GaAs(110)." The Ohio State University, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=osu15254254578788.

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48

Huang, Yan, and 黃燕. "Some studies of structural and point defects in gallium nitride and their influence in determining the properties of the bulk material,its Schottky contacts, P-N junctions and heterostructures." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2005. http://hub.hku.hk/bib/B31559670.

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49

Mari, Ruaz Hussain. "DLTS characterisation of defects in III-V compound semiconductors grown by MBE." Thesis, University of Nottingham, 2011. http://eprints.nottingham.ac.uk/14211/.

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The interest in the growth of III-V compound semiconductors such as GaAs and AlGaAs on high index planes has increased tremendously over the last few years. The structural, optical and electrical properties III-V based structures are found to improve by, growing on (nil) planes. For example the amphoteric nature of silicon (Si) facilitates the Molecular Beam Epitaxy (MBE) growth of p-type GaAs/AlGaAs heterostructures on (311)A that have higher hole mobilities than those based on the conventional Be-doped p-type on (100) GaAs plane. The incorporation of intentional impurities, such as Si or Be

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50

Vaseashta, Ashok K. "Photonic studies of defects and amorphization in ion beam damaged GaAs surfaces." Diss., This resource online, 1990. http://scholar.lib.vt.edu/theses/available/etd-08082007-170507/.

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