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Journal articles on the topic 'Defects in semiconductors'

Author: Grafiati

Published: 4 June 2021

Last updated: 15 February 2022

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1

Gösele, Ulrich M., and Teh Y. Tan. "Point Defects and Diffusion in Semiconductors." MRS Bulletin 16, no. 11 (1991): 42–46. http://dx.doi.org/10.1557/s0883769400055512.

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Semiconductor devices generally contain n- and p-doped regions. Doping is accomplished by incorporating certain impurity atoms that are substitutionally dissolved on lattice sites of the semiconductor crystal. In defect terminology, dopant atoms constitute extrinsic point defects. In this sense, the whole semiconductor industry is based on controlled introduction of specific point defects. This article addresses intrinsic point defects, ones that come from the native crystal. These defects govern the diffusion processes of dopants in semiconductors. Diffusion is the most basic process associat

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2

Batstone, J. L. "Structural and electronic properties of defects in semiconductors." Proceedings, annual meeting, Electron Microscopy Society of America 53 (August 13, 1995): 4–5. http://dx.doi.org/10.1017/s0424820100136398.

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The development of growth techniques such as metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy during the last fifteen years has resulted in the growth of high quality epitaxial semiconductor thin films for the semiconductor device industry. The III-V and II-VI semiconductors exhibit a wide range of fundamental band gap energies, enabling the fabrication of sophisticated optoelectronic devices such as lasers and electroluminescent displays. However, the radiative efficiency of such devices is strongly affected by the presence of optically and electrically active defect

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3

Mehrer, Helmut. "Diffusion and Point Defects in Elemental Semiconductors." Diffusion Foundations 17 (July 2018): 1–28. http://dx.doi.org/10.4028/www.scientific.net/df.17.1.

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Elemental semiconductors play an important role in high-technology equipment used in industry and everyday life. The first transistors were made in the 1950ies of germanium. Later silicon took over because its electronic band-gap is larger. Nowadays, germanium is the base material mainly for γ-radiation detectors. Silicon is the most important semiconductor for the fabrication of solid-state electronic devices (memory chips, processors chips, ...) in computers, cellphones, smartphones. Silicon is also important for photovoltaic devices of energy production.Diffusion is a key process in the fab

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4

Suezawa, Masashi. "Defects in Semiconductors." Materia Japan 36, no. 9 (1997): 837–39. http://dx.doi.org/10.2320/materia.36.837.

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5

Dannefaer, S. "Defects in semiconductors." Radiation Effects and Defects in Solids 111-112, no. 1-2 (1989): 65–76. http://dx.doi.org/10.1080/10420158908212982.

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6

McCluskey, Matthew D., and Anderson Janotti. "Defects in Semiconductors." Journal of Applied Physics 127, no. 19 (2020): 190401. http://dx.doi.org/10.1063/5.0012677.

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7

Brillson, Leonard, Jonathan Cox, Hantian Gao, et al. "Native Point Defect Measurement and Manipulation in ZnO Nanostructures." Materials 12, no. 14 (2019): 2242. http://dx.doi.org/10.3390/ma12142242.

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This review presents recent research advances in measuring native point defects in ZnO nanostructures, establishing how these defects affect nanoscale electronic properties, and developing new techniques to manipulate these defects to control nano- and micro- wire electronic properties. From spatially-resolved cathodoluminescence spectroscopy, we now know that electrically-active native point defects are present inside, as well as at the surfaces of, ZnO and other semiconductor nanostructures. These defects within nanowires and at their metal interfaces can dominate electrical contact properti

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8

Zeng, Haibo, Xue Ning, and Xiaoming Li. "An insight into defect relaxation in metastable ZnO reflected by a unique luminescence and Raman evolutions." Physical Chemistry Chemical Physics 17, no. 29 (2015): 19637–42. http://dx.doi.org/10.1039/c5cp02392k.

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9

Yakubovich, Boris. "Influence of penetrating radiations on electrical low frequency noise of semiconductors." ADVANCES IN APPLIED PHYSICS 9, no. 3 (2021): 181–86. http://dx.doi.org/10.51368/2307-4469-2021-9-3-181-186.

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The influence of penetrating radiations on the electrical low-frequency noise of semiconductors is studied. Expression is calculated that determines the number of structural defects in semiconductors arising from exposure to penetrating radia-tion. General form expression is calculated for the spectrum of electrical low-frequency noise in semiconductors when exposed to penetrating radiation. Quanti-tative relationship was established between the spectrum of electrical low-frequency noise and the development of disturbances in the structure of semicon-ductors caused by penetrating radiations. T

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10

Antonelli, A., J. F. Justo, and A. Fazzio. "Point defect interactions with extended defects in semiconductors." Physical Review B 60, no. 7 (1999): 4711–14. http://dx.doi.org/10.1103/physrevb.60.4711.

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11

Kawasuso, Atsuo, and Masayuki Hasegawa. "Defects in Bulk Semiconductors." Materia Japan 35, no. 2 (1996): 130–39. http://dx.doi.org/10.2320/materia.35.130.

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12

Robertson, J. "Defects in amorphous semiconductors." Philosophical Magazine B 51, no. 2 (1985): 183–92. http://dx.doi.org/10.1080/13642818508240562.

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13

Callaway, Joseph, and A. James Hughes. "Localized defects in semiconductors." International Journal of Quantum Chemistry 1, S1 (2009): 769–71. http://dx.doi.org/10.1002/qua.560010684.

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14

Komninou, Philomela. "Extended Defects in Semiconductors." physica status solidi (c) 10, no. 1 (2013): 7–9. http://dx.doi.org/10.1002/pssc.201360154.

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15

Seibt, Michael, and Martin Kittler. "Extended Defects in Semiconductors." physica status solidi (c) 12, no. 8 (2015): 1065–66. http://dx.doi.org/10.1002/pssc.201570099.

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16

Alexander, H. "Extended Defects in Semiconductors." Crystal Research and Technology 28, no. 1 (1993): K8—K9. http://dx.doi.org/10.1002/crat.2170280126.

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17

McKernan, Stuart, and C. Barry Carter. "Planar defects in AIN." Proceedings, annual meeting, Electron Microscopy Society of America 47 (August 6, 1989): 432–33. http://dx.doi.org/10.1017/s0424820100154135.

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Aluminum nitride has recently become the subject of much interest as a technologically useful ceramic. The mechanical strength, high thermal conductivity and large electrical resistivity and a relatively small thermal expansion coefficient, make this material extremely well suited as a semiconductor substrate material. AlN has the hexagonal, wurtzite structure rather than the cubic structure of the more common semiconductors. It is also a polar material. The characterization of microstructural defects in this material is obviously necessary to the understanding of the materials properties.In s

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18

HUNG, VU VAN, and LE DAI THANH. "MELTING CURVE OF SEMICONDUCTORS WITH DEFECTS: PRESSURE DEPENDENCE." International Journal of Modern Physics B 26, no. 07 (2012): 1250050. http://dx.doi.org/10.1142/s0217979212500506.

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The high-pressure melting curve of semiconductors with defects has been studied using statistical moment method (SMM). In agreement with experiments and with DFT calculations we obtain a negative slope for the high-pressure melting curve. We have derived a new equation for the melting curve of the defect semiconductors. The melting was investigated at different high pressures, and the SMM calculated melting temperature of Si, AlP, AlAs and GaP crystals with defects being in good agreement with previous experiments.

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19

Lee, Donghun, and Jay A. Gupta. "Perspectives on deterministic control of quantum point defects by scanned probes." Nanophotonics 8, no. 11 (2019): 2033–40. http://dx.doi.org/10.1515/nanoph-2019-0212.

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AbstractControl over individual point defects in solid-state systems is becoming increasingly important, not only for current semiconductor industries but also for next generation quantum information science and technologies. To realize the potential of these defects for scalable and high-performance quantum applications, precise placement of defects and defect clusters at the nanoscale is required, along with improved control over the nanoscale local environment to minimize decoherence. These requirements are met using scanned probe microscopy in silicon and III-V semiconductors, which sugges

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20

Estreicher, Stefan K., T. Michael Gibbons, and Michael Stavola. "Isotope-Dependent Phonon Trapping at Defects in Semiconductors." Solid State Phenomena 205-206 (October 2013): 209–12. http://dx.doi.org/10.4028/www.scientific.net/ssp.205-206.209.

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Unexpectedly large isotope effects have been reported for the vibrational lifetimes of the H-C stretch mode of the CH2*defect in Si and the asymmetric stretch of interstitial O in Si as well. First-principles theory can explain these effects. The results imply that defects trap phonons for lengths of time that depend on the defect and sometimes on its isotopic composition. Some consequences of phonon trapping are discussed.

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21

Jäger, Wolfgang. "Diffusion and Defect Phenomena in III-V Semiconductors and their Investigation by Transmission Electron Microscopy." Diffusion Foundations 17 (July 2018): 29–68. http://dx.doi.org/10.4028/www.scientific.net/df.17.29.

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This article reviews the studies of diffusion and defect phenomena induced by high-concentration zinc diffusion in the single-crystal III-V compound semiconductors GaAs, GaP, GaSb and InP by methods of transmission electron microscopy and their consequences for numerical modelling of Zn (and Cd) diffusion concentration profiles. Zinc diffusion from the vapour phase into single-crystal wafers has been chosen as a model case for interstitial-substitutional dopant diffusion in these studies. The characteristics of the formation of diffusion-induced extended defects and of the temporal evolution o

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22

Hautojärvi, Pekka J. "Defects in Metals and Semiconductors." Materials Science Forum 363-365 (April 2001): 698–700. http://dx.doi.org/10.4028/www.scientific.net/msf.363-365.698.

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23

Stiévenard, Didier. "Irradiation Induced Defects in Semiconductors." Solid State Phenomena 30-31 (January 1992): 229–76. http://dx.doi.org/10.4028/www.scientific.net/ssp.30-31.229.

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24

Bourgoin, J. C. "Metastable Defects in Compound Semiconductors." Solid State Phenomena 71 (October 1999): 73–92. http://dx.doi.org/10.4028/www.scientific.net/ssp.71.73.

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25

Lambrecht, Walter. "Dopants and Defects in Semiconductors." Materials Today 15, no. 7-8 (2012): 349. http://dx.doi.org/10.1016/s1369-7021(12)70146-3.

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26

Seebauer, Edmund G., and Meredith C. Kratzer. "Charged point defects in semiconductors." Materials Science and Engineering: R: Reports 55, no. 3-6 (2006): 57–149. http://dx.doi.org/10.1016/j.mser.2006.01.002.

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27

Höche, H. R., H. S. Leipner, and G. Stadermann. "Line Defects in AIIIBV Semiconductors." physica status solidi (a) 98, no. 2 (1986): 503–10. http://dx.doi.org/10.1002/pssa.2210980221.

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28

Deicher, M. "Dynamics of defects in semiconductors." Hyperfine Interactions 79, no. 1-4 (1993): 681–700. http://dx.doi.org/10.1007/bf00567596.

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29

Walukiewicz, W. "Amphoteric native defects in semiconductors." Applied Physics Letters 54, no. 21 (1989): 2094–96. http://dx.doi.org/10.1063/1.101174.

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30

Rajan, Krishna. "Defects in Strained Layer Semiconductors." JOM 39, no. 6 (1987): 24–25. http://dx.doi.org/10.1007/bf03258056.

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31

Estreicher, Stefan K., T. Michael Gibbons, M. Bahadir Bebek, and Alexander L. Cardona. "Heat Flow and Defects in Semiconductors: beyond the Phonon Scattering Assumption." Solid State Phenomena 242 (October 2015): 335–43. http://dx.doi.org/10.4028/www.scientific.net/ssp.242.335.

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It is universally accepted that defects in materials scatter thermal phonons, and that this scattering is the reason why defects reduce the flow of heat relative to the defect-free material. However, ab-initio molecular-dynamics simulations which include defect dynamics show that the interactions between thermal phonons and defects involve the coupling between bulk (delocalized) and defect-related (localized) oscillators. Defects introduce Spatially-Localized Modes (SLMs) which trap thermal phonons for dozens to hundreds of periods of oscillation, much longer than the lifetimes of bulk excitat

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32

Cochrane, J., and P. Carpenter. "Characterization of Semiconductors Grown in a Rotating Magnetic Field." Microscopy and Microanalysis 7, S2 (2001): 568–69. http://dx.doi.org/10.1017/s1431927600028919.

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Many different techniques have been used in attempts to minimize defects in single crystal semiconductors. This study examines semiconductors grown in the presence of a rotating magnetic field (RMF). The RMF method is commonly used in metallurgy to stir an electrically conducting liquid during the casting process which can reduce the effects of buoyancy driven convection and enhance the mass transfer process. The variation of heat and mass transfer processes by RMF can be controlled by selecting a specific frequency and strength of the magnetic field. Both numerical modeling and space-based cr

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33

Nolte, David, and Michael Melloch. "Bandgap and Defect Engineering for Semiconductor Holographic Materials: Photorefractive Quantum Wells and Thin Films." MRS Bulletin 19, no. 3 (1994): 44–49. http://dx.doi.org/10.1557/s0883769400039683.

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Bandgap engineering of thin semiconductor layers and defect engineering combine to form photorefractive (PR) quantum well structures. PR quantum wells are semi-insulating thin films useful for dynamic holography and other coherent and incoherent optical applications. As materials for thin-film dynamic holography, they have high nonlinear-optical sensitivity and high speed.The PR effect translates a spatially varying irradiance, from the interference of two or more coherent light beams, into a refractive index grating. The multiple-step PR process begins with photoexcitation of charge carriers,

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34

Dietl, Tomasz, and Hideo Ohno. "Ferromagnetic III–V and II–VI Semiconductors." MRS Bulletin 28, no. 10 (2003): 714–19. http://dx.doi.org/10.1557/mrs2003.211.

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AbstractRecent years have witnessed extensive research aimed at developing functional, tetrahedrally coordinated ferromagnetic semiconductors that could combine the resources of semiconductor quantum structures and ferromagnetic materials systems and thus lay the foundation for semiconductor spintronics. Spin-injection capabilities and tunability of magnetization by light and electric field in Mn-based III–V and II–VI diluted magnetic semiconductors are examples of noteworthy accomplishments. This article reviews the present understanding of carrier-controlled ferromagnetism in these compounds

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35

Poklonski, N. A., S. A. Vyrko, A. I. Kovalev, I. I. Anikeev, and N. I. Gorbachuk. "Design of Peltier Element Based on Semiconductors with Hopping Electron Transfer via Defects." Devices and Methods of Measurements 12, no. 1 (2021): 13–22. http://dx.doi.org/10.21122/2220-9506-2021-12-1-13-22.

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The study of thermoelectric properties of crystalline semiconductors with structural defects is of practical interest in the development of radiation-resistant Peltier elements. In this case, the spectrum of energy levels of hydrogen-like impurities and intrinsic point defects in the band gap (energy gap) of crystal plays an important role.The purpose of this work is to analyze the features of the single-electron band model of semiconductors with hopping electron migration both via atoms of hydrogen-like impurities and via their own point triplecharged intrinsic defects in the c- and v-bands,

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36

LEE, Hyun Seok. "Defects and Optoelectronic Properties in 2D Semiconductors." Physics and High Technology 29, no. 9 (2020): 11–14. http://dx.doi.org/10.3938/phit.29.031.

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Two-dimensional (2D) van der Waals semiconductors have potential for various optoelectronic applications, owing to their unique optical and electrical properties at an atomic layer thickness. A stable excitonic emission from 2D monolayer semiconductors at room temperature, owing to a reduced dielectric screening effect, opens new fields of research on excitonics and valleytronics. Moreover, their low dimensionality without surface dangling bonds allows for unique quantum transport phenomena via artificial van der Waals stacking using a versatile library of 2D materials. In this article, the au

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37

Hsu, Julia W. P. "Semiconductor Defect Studies Using Scanning Probes." Microscopy and Microanalysis 6, S2 (2000): 704–5. http://dx.doi.org/10.1017/s1431927600036011.

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Understanding how defects alter physical properties of materials has lead to improvements in materials growth as well as device performance. Transmission electron microscopy (TEM) provides an invaluable tool for structural characterization of defects. Our current knowledge of crystallographic defects, such as dislocations, would not have been possible without TEM. Recently, scanning tunneling microscopy and scanning force microscopy (SFM) have shown the capability of imaging surface defects with atomic or near-atomic resolution in topographic images. What is more important is to gain knowledge

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38

Nguyen, Thien-Phap, Cédric Renaud, and Chun-Hao Huang. "Electrically Active Defects in Organic Semiconductors." Journal of the Korean Physical Society 52, no. 5 (2008): 1550–53. http://dx.doi.org/10.3938/jkps.52.1550.

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39

Mascher, Peter. "Bulk Studies of Defects in Semiconductors." Materials Science Forum 363-365 (April 2001): 30–34. http://dx.doi.org/10.4028/www.scientific.net/msf.363-365.30.

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40

Hung, Vu Van, and Le Dai Thanh. "Thermodynamic Properties of Semiconductors with Defects." Materials Sciences and Applications 02, no. 09 (2011): 1225–32. http://dx.doi.org/10.4236/msa.2011.29166.

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41

Hautojärvi, P. "Positron Spectroscopy of Defects in Semiconductors." Le Journal de Physique IV 05, no. C1 (1995): C1–3—C1–14. http://dx.doi.org/10.1051/jp4:1995101.

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42

WILSHAW, P. R., T. S. FELL, and M. D. COTEAU. "EBIC CONTRAST OF DEFECTS IN SEMICONDUCTORS." Le Journal de Physique IV 01, no. C6 (1991): C6–3—C6–14. http://dx.doi.org/10.1051/jp4:1991601.

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43

Li, W., and J. D. Patterson. "Deep defects in narrow-gap semiconductors." Physical Review B 50, no. 20 (1994): 14903–10. http://dx.doi.org/10.1103/physrevb.50.14903.

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44

Masterov, V. F., S. I. Bondarevskii, F. S. Nasredinov, N. P. Seregin, and P. P. Seregin. "Antistructural defects in PbTe-type semiconductors." Semiconductors 33, no. 7 (1999): 710–11. http://dx.doi.org/10.1134/1.1187765.

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45

Bar-Yam, Y., and J. D. Joannopoulos. "Theories of defects in amorphous semiconductors." Journal of Non-Crystalline Solids 97-98 (December 1987): 467–74. http://dx.doi.org/10.1016/0022-3093(87)90110-4.

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46

Weber, J�rg. "Molecule-like defects in crystalline semiconductors." Applied Physics A Solids and Surfaces 48, no. 1 (1989): 1. http://dx.doi.org/10.1007/bf00617757.

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47

Robertson, J. "Theory of defects in amorphous semiconductors." Journal of Non-Crystalline Solids 77-78 (December 1985): 37–46. http://dx.doi.org/10.1016/0022-3093(85)90605-2.

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48

Potin, V., P. Vermaut, P. Ruterana, and G. Nouet. "Extended defects in wurtzite nitride semiconductors." Journal of Electronic Materials 27, no. 4 (1998): 266–75. http://dx.doi.org/10.1007/s11664-998-0398-3.

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49

Watkins, G. D. "Intrinsic defects in II–VI semiconductors." Journal of Crystal Growth 159, no. 1-4 (1996): 338–44. http://dx.doi.org/10.1016/0022-0248(95)00680-x.

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50

McKenan, Stuart, M. Grant Norton, and C. Barry Carter. "Low-energy surfaces and interfaces in aluminum nitride." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 4 (1990): 350–51. http://dx.doi.org/10.1017/s0424820100174886.

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As a potential semiconductor substrate material, aluminum nitride (AIN) has recently become the subject of much research. In particular, the nature of the defects which occur in this material is yet to be fully understood. The mechanical strength, high thermal conductivity and large electrical resistivity and a relatively small thermal expansion coefficient, of the defect-free, single crystal material make it extremely well suited for use as a semiconductor substrate material. The polycrystalline AIN contains grain- boundaries, second phases, and many internal defects, all of which may produce

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