Academic literature on the topic 'Degenerate semiconductors'

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Journal articles on the topic "Degenerate semiconductors"

1

Khan, Arif, and Atanu Das. "Diffusivity-Mobility Relationship for Heavily Doped Semiconductors with Non-Uniform Band Structures." Zeitschrift für Naturforschung A 65, no. 10 (2010): 882–86. http://dx.doi.org/10.1515/zna-2010-1017.

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A general relationship between the diffusivity and the mobility in degenerate semiconductors with non-uniform energy band structures has been presented. The relationship is general enough to be applicable to both non-degenerate and degenerate semiconductors. It is suitable for the study of electrical transport in heavily doped semiconductors and semiconductor devices.
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2

Khan, Arif, and Atanu Das. "General Diffusivity-Mobility Relationship for Heavily Doped Semiconductors." Zeitschrift für Naturforschung A 64, no. 3-4 (2009): 257–62. http://dx.doi.org/10.1515/zna-2009-3-414.

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Abstract A relationship between diffusivity and mobility in degenerate semiconductors is presented. The relationship is general enough to be applicable to both non-degenerate and degenerate semiconductors. It is suitable for the investigation of the electrical transport in heavily doped semiconductors
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3

Preezant, Yevgeni, Yohai Roichman, and Nir Tessler. "Amorphous organic devices degenerate semiconductors." Journal of Physics: Condensed Matter 14, no. 42 (2002): 9913–24. http://dx.doi.org/10.1088/0953-8984/14/42/306.

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4

Das, Atanu, and Arif Khan. "The Diffusivity-Mobility Relationship of Heavily Doped Semiconductors Exhibiting a Non-Parabolic Band Structure and Bandgap Narrowing." Zeitschrift für Naturforschung A 62, no. 10-11 (2007): 605–8. http://dx.doi.org/10.1515/zna-2007-10-1108.

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A relationship between the mobility and diffusivity of semiconductors exhibiting bandgap narrowing has been presented. The relationship is general and applicable to both non-degenerate and degenerate semiconductors under an applied bias. It is suitable for the investigation of the electrical transport in heavily doped semiconductors.
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5

Dmitriev, A. P., E. Borovitskaya, M. E. Levinshtein, S. L. Rumyantsev, and M. S. Shur. "Low frequency noise in degenerate semiconductors." Journal of Applied Physics 90, no. 1 (2001): 301–5. http://dx.doi.org/10.1063/1.1379556.

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6

Keyes, R. W. "Potentials and junctions in degenerate semiconductors." Solid-State Electronics 32, no. 2 (1989): 159–64. http://dx.doi.org/10.1016/0038-1101(89)90183-4.

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7

Lax, M., and B. I. Halperin. "Impurity band tails in degenerate semiconductors." International Journal of Quantum Chemistry 1, S1 (2009): 767. http://dx.doi.org/10.1002/qua.560010683.

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8

Aktsipetrov, O. A., I. M. Baranova, K. N. Evtyukhov, T. V. Murzina, and I. V. Chernyĭ. "Reflected second harmonic in degenerate semiconductors: nonlinear electroreflection under surface degeneracy conditions." Soviet Journal of Quantum Electronics 22, no. 9 (1992): 807–14. http://dx.doi.org/10.1070/qe1992v022n09abeh003603.

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9

Mondal, M., and K. P. Gnatak. "Effect of carrier degeneracy on the screening length in degenerate tetragonal semiconductors." physica status solidi (b) 135, no. 1 (1986): 239–51. http://dx.doi.org/10.1002/pssb.2221350125.

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10

Nagaev, É. L. "Phase separation in degenerate magnetic oxide semiconductors." Physics of the Solid State 40, no. 11 (1998): 1873–77. http://dx.doi.org/10.1134/1.1130676.

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