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Journal articles on the topic 'Degenerate semiconductors'

Author: Grafiati

Published: 6 September 2023

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1

Khan, Arif, and Atanu Das. "Diffusivity-Mobility Relationship for Heavily Doped Semiconductors with Non-Uniform Band Structures." Zeitschrift für Naturforschung A 65, no. 10 (2010): 882–86. http://dx.doi.org/10.1515/zna-2010-1017.

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A general relationship between the diffusivity and the mobility in degenerate semiconductors with non-uniform energy band structures has been presented. The relationship is general enough to be applicable to both non-degenerate and degenerate semiconductors. It is suitable for the study of electrical transport in heavily doped semiconductors and semiconductor devices.

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2

Khan, Arif, and Atanu Das. "General Diffusivity-Mobility Relationship for Heavily Doped Semiconductors." Zeitschrift für Naturforschung A 64, no. 3-4 (2009): 257–62. http://dx.doi.org/10.1515/zna-2009-3-414.

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Abstract A relationship between diffusivity and mobility in degenerate semiconductors is presented. The relationship is general enough to be applicable to both non-degenerate and degenerate semiconductors. It is suitable for the investigation of the electrical transport in heavily doped semiconductors

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3

Preezant, Yevgeni, Yohai Roichman, and Nir Tessler. "Amorphous organic devices degenerate semiconductors." Journal of Physics: Condensed Matter 14, no. 42 (2002): 9913–24. http://dx.doi.org/10.1088/0953-8984/14/42/306.

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4

Das, Atanu, and Arif Khan. "The Diffusivity-Mobility Relationship of Heavily Doped Semiconductors Exhibiting a Non-Parabolic Band Structure and Bandgap Narrowing." Zeitschrift für Naturforschung A 62, no. 10-11 (2007): 605–8. http://dx.doi.org/10.1515/zna-2007-10-1108.

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A relationship between the mobility and diffusivity of semiconductors exhibiting bandgap narrowing has been presented. The relationship is general and applicable to both non-degenerate and degenerate semiconductors under an applied bias. It is suitable for the investigation of the electrical transport in heavily doped semiconductors.

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5

Dmitriev, A. P., E. Borovitskaya, M. E. Levinshtein, S. L. Rumyantsev, and M. S. Shur. "Low frequency noise in degenerate semiconductors." Journal of Applied Physics 90, no. 1 (2001): 301–5. http://dx.doi.org/10.1063/1.1379556.

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6

Keyes, R. W. "Potentials and junctions in degenerate semiconductors." Solid-State Electronics 32, no. 2 (1989): 159–64. http://dx.doi.org/10.1016/0038-1101(89)90183-4.

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7

Lax, M., and B. I. Halperin. "Impurity band tails in degenerate semiconductors." International Journal of Quantum Chemistry 1, S1 (2009): 767. http://dx.doi.org/10.1002/qua.560010683.

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8

Aktsipetrov, O. A., I. M. Baranova, K. N. Evtyukhov, T. V. Murzina, and I. V. Chernyĭ. "Reflected second harmonic in degenerate semiconductors: nonlinear electroreflection under surface degeneracy conditions." Soviet Journal of Quantum Electronics 22, no. 9 (1992): 807–14. http://dx.doi.org/10.1070/qe1992v022n09abeh003603.

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9

Mondal, M., and K. P. Gnatak. "Effect of carrier degeneracy on the screening length in degenerate tetragonal semiconductors." physica status solidi (b) 135, no. 1 (1986): 239–51. http://dx.doi.org/10.1002/pssb.2221350125.

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10

Nagaev, É. L. "Phase separation in degenerate magnetic oxide semiconductors." Physics of the Solid State 40, no. 11 (1998): 1873–77. http://dx.doi.org/10.1134/1.1130676.

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11

Ferrante, G., M. Zarcone, and S. A. Uryupin. "Infrared radiation harmonic generation in degenerate semiconductors." European Physical Journal B 42, no. 1 (2004): 11–16. http://dx.doi.org/10.1140/epjb/e2004-00353-0.

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12

da Costa, Wilson B., and Nelson Studart. "Interacting many-polaron system in degenerate semiconductors." Physical Review B 47, no. 11 (1993): 6356–62. http://dx.doi.org/10.1103/physrevb.47.6356.

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13

Nagaev, E. L. "High-temperature resistivity of degenerate ferromagnetic semiconductors." Physics Letters A 255, no. 4-6 (1999): 336–42. http://dx.doi.org/10.1016/s0375-9601(99)00188-7.

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14

ABDALLAH, N. BEN, and H. CHAKER. "THE HIGH FIELD ASYMPTOTICS FOR DEGENERATE SEMICONDUCTORS." Mathematical Models and Methods in Applied Sciences 11, no. 07 (2001): 1253–72. http://dx.doi.org/10.1142/s0218202501001252.

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The high field limit for the semiconductor Boltzmann equation with Pauli exclusion terms is investigated. The limit problem is shown to have a unique solution for every given density. The proof relies on a linearization procedure together with a continuation argument. The density is finally proven to converge in the high field limit towards the solution of a nonlinear hyperbolic equation.

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15

Shimakawa, K., S. Narushima, H. Hosono, and H. Kawazoe. "Electronic transport in degenerate amorphous oxide semiconductors." Philosophical Magazine Letters 79, no. 9 (1999): 755–61. http://dx.doi.org/10.1080/095008399176823.

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16

Orazem, M. E. "Electron and hole transport in degenerate semiconductors." AIChE Journal 32, no. 5 (1986): 765–72. http://dx.doi.org/10.1002/aic.690320506.

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17

Al-Yousef, Haifa A., Sh M. Khalil, and Alkesh Punjabi. "Degeneracy in Magneto-Active Dense Plasma." Advances in Mathematical Physics 2020 (January 23, 2020): 1–6. http://dx.doi.org/10.1155/2020/6495807.

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Degenerate dense plasmas are of great interest due to their important applications in modern technology and astrophysics. Such plasmas have generated a lot of interest in the last decade owing to their importance in many areas of physics such as semiconductors, metals, microelectronics, carbon nanotubes, quantum dots, and quantum wells. Besides, degenerate plasmas present very interesting features for fusion burning waves’ ignition and propagation. In this paper, we investigated the effects of static magnetic field on energy states and degeneracy of electrons in dense plasma. Using perturbation theory, two cases are considered, strongly and weakly magnetized electrons. Strong magnetic field will not eliminate completely the degeneracy, but it functions to reduce degeneracy. Perturbed energy eigenvalues ΔE are calculated to high accuracy. Besides, regardless of whether the perturbed state is degenerate or not, the energy ΔE is given by considering the average of orbital and spin coupling Ws=ℵrL→·S→ with respect to the eigenfunction Ψn,l,m,ms. Here L→ is the angular momentum vector, S→ is the spin vector of electrons, and ℵr is the energy of spin orbit coupling in plasma, which plays a crucial role in the study of energy states and degeneracy of plasma electrons.

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18

Das, Atanu, and Arif Khan. "Carrier Concentrations in Degenerate Semiconductors Having Band Gap Narrowing." Zeitschrift für Naturforschung A 63, no. 3-4 (2008): 193–98. http://dx.doi.org/10.1515/zna-2008-3-413.

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The density-of-states effective mass approximation and the conduction-band effective mass approximation are employed to formulate carrier concentrations and the diffusivity-mobility relationship (DMR) for heavily doped n-semiconductors exhibiting band gap narrowing. These are very suitable for the investigation of electrical transport also in heavily doped p-semiconductors. Numerical calculations indicate that the DMR depends on a host of parameters including the temperature, carrier degeneracy, and the non-parabolicity of the band structure.

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19

Tanguy, C., and M. Combescot. "Direct auger recombination in degenerate direct gap semiconductors." Solid State Communications 57, no. 7 (1986): 539–41. http://dx.doi.org/10.1016/0038-1098(86)90626-5.

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20

Sargent, M., A. E. Paul, and S. W. Koch. "Nearly degenerate multiwave mixing in quasi-equilibrium semiconductors." Optics Communications 103, no. 5-6 (1993): 417–21. http://dx.doi.org/10.1016/0030-4018(93)90167-4.

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21

Nagaev, E. L. "Degenerate ferromagnetic LaMnO3-based semiconductors without double exchange." Physics Letters A 219, no. 1-2 (1996): 111–16. http://dx.doi.org/10.1016/0375-9601(96)00467-7.

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22

Greiner, A., L. Varani, L. Reggiani, M. C. Vecchi, T. Kuhn, and P. Golinelli. "Carrier Thermal Conductivity: Analysis and Application to Submicron-Device Simulation." VLSI Design 8, no. 1-4 (1998): 59–64. http://dx.doi.org/10.1155/1998/27140.

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Within a correlation-function (CF) formalism, the kinetic coefficientsof charge carriers in semiconductors are studied under different conditions. For the case of linear response in equilibrium, thetransitions from the non-degenerate to the degenerate regimes as wellas from ballistic to diffusive conditions are discussed within ananalytical model. Generalizing the method to high-field transport innondegenerate semiconductors, the CFs are determined by Monte Carlo (MC) calculations for bulk silicon from which the appropriate thermalconductivity has been obtained and included into the hydrodynamic code HEIELDS. For an n+nn+ submicron structure the temperatureand velocity profiles of the carriers have been calculated with HFIELDS.

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23

JÜNGEL, ANSGAR. "ON THE EXISTENCE AND UNIQUENESS OF TRANSIENT SOLUTIONS OF A DEGENERATE NONLINEAR DRIFT-DIFFUSION MODEL FOR SEMICONDUCTORS." Mathematical Models and Methods in Applied Sciences 04, no. 05 (1994): 677–703. http://dx.doi.org/10.1142/s0218202594000388.

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We analyze the degenerate transient multi-dimensional quasi-hydrodynamic model for semiconductors with general recombination rate. We present existence results for general nonlinear diffusivities for the nondegenerate and the degenerate Dirichlet-Neumann mixed boundary value problem. Uniqueness of solutions of the nondegenerate system can be proved in the Dirichlet boundary case. Concerning the degenerate problem uniqueness can only be shown under some conditions on the initial and boundary data or on the electric field.

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24

Wang, Yong, Takeo Ohsawa, Fahad Alnjiman, Jean-Francois Pierson, and Naoki Ohashi. "Electrical properties of zinc nitride and zinc tin nitride semiconductor thin films toward photovoltaic applications." High Temperature Materials and Processes 41, no. 1 (2022): 343–52. http://dx.doi.org/10.1515/htmp-2022-0028.

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Abstract Zn3N2 (ZN) and ZnSnN2 (ZTN) are a promising class of nitride semiconductors for photovoltaic and light-emitting-diode applications due to their particular electrical and optical properties, elemental abundance and non-toxicity. So far, most of the experimental results show the degenerate carrier concentration. However, we find that low-temperature growth of these films in a chamber with ultra-high background vacuum can attain a non-degenerate electrical conductivity. This work provides the recent progress of the electrical properties of ZN and ZTN semiconductor thin films. The origins for the high carrier concentrations in ZN and ZTN have been discussed, demonstrating that non-intentional oxygen and hydrogen-related defects play significant roles in such high carrier concentrations. The strategies to suppress the carrier concentrations have also been addressed, such as ultra-high vacuum conditions and low temperature growth.

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25

Tripathi, G. S., and S. K. Shadangi. "Many-body theory of effective mass in degenerate semiconductors." International Journal of Modern Physics B 32, no. 07 (2018): 1850082. http://dx.doi.org/10.1142/s0217979218500820.

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We derive the many-body theory of the effective mass in the effective mass representation (EMR). In the EMR, we need to solve the equation of motion of an electron in the presence of electron–electron interactions, where the wavefunction is expanded over a complete set of Luttinger–Kohn wavefunctions. We use the Luttinger–Ward thermodynamic potential and the Green’s function perturbation to derive an expression for the band effective mass by taking into account the electron–electron interactions. Both quasi-particle and the correlation contributions are considered. We show that had we considered only the quasi-particle contribution, we would have missed important cancellations. Thus the correlated motion of electrons has important effects in the renormalization of the effective mass. Considering the exchange self-energy in the band model, we derive a tractable expression for the band effective mass. We apply the theory to n-type degenerate semiconductors, PbTe and SnTe, and analyze the impact of the theory on the anisotropic effective mass of the conduction bands in these systems.

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26

Umehara, Masakatsu. "Crystallization of dense magnetic polarons in degenerate magnetic semiconductors." Physical Review B 36, no. 1 (1987): 574–86. http://dx.doi.org/10.1103/physrevb.36.574.

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27

Zhang, Y. J., Z. Q. Li, and J. J. Lin. "Electron-electron scattering in three-dimensional highly degenerate semiconductors." EPL (Europhysics Letters) 103, no. 4 (2013): 47002. http://dx.doi.org/10.1209/0295-5075/103/47002.

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28

Kuleev, I. G. "Normal quasiparticle scattering and kinetic effects in degenerate semiconductors." Physics of the Solid State 44, no. 2 (2002): 223–34. http://dx.doi.org/10.1134/1.1451005.

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29

Mohammad, S. Noor, and Ronald L. Carter. "Mobility—diffusivity relationship for degenerate semiconductors under mechanical stress." Philosophical Magazine B 72, no. 1 (1995): 13–18. http://dx.doi.org/10.1080/13642819508239060.

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30

Gomila, G., T. González, and L. Reggiani. "Enhanced shot-noise in mesoscopic non-degenerate diffusive semiconductors." Physica B: Condensed Matter 314, no. 1-4 (2002): 189–92. http://dx.doi.org/10.1016/s0921-4526(01)01350-3.

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31

Patra, S. N., and D. P. Bhattacharya. "Piezoelectric interaction in degenerate semiconductors at low lattice temperatures." Physica B: Condensed Matter 325 (January 2003): 17–25. http://dx.doi.org/10.1016/s0921-4526(02)01273-5.

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32

Chung, Wei-Ye, and D. K. Ferry. "Dynamic screening for ionized impurity scattering in degenerate semiconductors." Solid-State Electronics 31, no. 9 (1988): 1369–74. http://dx.doi.org/10.1016/0038-1101(88)90100-1.

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33

Gupta, Rita, and B. K. Ridley. "High-field transport with hot phonons in degenerate semiconductors." Solid-State Electronics 32, no. 12 (1989): 1241–45. http://dx.doi.org/10.1016/0038-1101(89)90221-9.

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34

Yang, Hongbin, Eric Garfunkel, and Philip Batson. "Carrier Collective Excitations in Degenerate Semiconductors Studied by EELS." Microscopy and Microanalysis 26, S2 (2020): 1924–26. http://dx.doi.org/10.1017/s1431927620019844.

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35

Gifeisman, Sh N., and V. P. Koropchanu. "Shallow acceptors in ionic semiconductors with a degenerate band." Soviet Physics Journal 34, no. 1 (1991): 40–42. http://dx.doi.org/10.1007/bf00914120.

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36

Rangel-Huerta, A., and M. A. Rodríguez-Meza. "Kinetic theory of thermotransport of polar semiconductors: Degenerate limit." physica status solidi (c) 2, no. 10 (2005): 3525–28. http://dx.doi.org/10.1002/pssc.200461709.

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37

Srivastava, K. S., Achla Sinha, Reena Srivastava, and Ajay Tandon. "Interaction Between Two Surface Excitations in Degenerate Polar Semiconductors." physica status solidi (b) 146, no. 1 (1988): 141–47. http://dx.doi.org/10.1002/pssb.2221460114.

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38

Lu, Xu, Wei Yao, Guiwen Wang, et al. "Band structure engineering in highly degenerate tetrahedrites through isovalent doping." Journal of Materials Chemistry A 4, no. 43 (2016): 17096–103. http://dx.doi.org/10.1039/c6ta07015a.

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It can be difficult to reduce the electrical resistivity of highly degenerate semiconductors due to their high carrier concentration, impeding the further increase in their thermoelectric power factor.

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39

PANTKE, KARL-HEINZ, and JØRN M. HVAM. "NONLINEAR QUANTUM BEAT SPECTROSCOPY IN SEMICONDUCTORS." International Journal of Modern Physics B 08, no. 01n02 (1994): 73–120. http://dx.doi.org/10.1142/s021797929400004x.

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We review quantum beats from extended electronic states in bulk semiconductors and multiple quantum well structures obtained by nonlinear spectroscopy. The nonlinear methods are degenerate four-wave mixing, photon echo and nonlinear transmission. The role of the spectral resolution of the nonlinear signal emitted from a four-wave mixing process is discussed in detail. Results obtained by linear methods like fluorescence or transmission are briefly discussed.

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40

Bahadur, Ali, Tehseen Ali Anjum, Mah Roosh, et al. "Magnetic, Electronic, and Optical Studies of Gd-Doped WO3: A First Principle Study." Molecules 27, no. 20 (2022): 6976. http://dx.doi.org/10.3390/molecules27206976.

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Tungsten trioxide (WO3) is mainly studied as an electrochromic material and received attention due to N-type oxide-based semiconductors. The magnetic, structural, and optical behavior of pristine WO3 and gadolinium (Gd)-doped WO3 are being investigated using density functional theory. For exchange-correlation potential energy, generalized gradient approximation (GGA+U) is used in our calculations, where U is the Hubbard potential. The estimated bandgap of pure WO3 is 2.5 eV. After the doping of Gd, some states cross the Fermi level, and WO3 acts as a degenerate semiconductor with a 2 eV bandgap. Spin-polarized calculations show that the system is antiferromagnetic in its ground state. The WO3 material is a semiconductor, as there is a bandgap of 2.5 eV between the valence and conduction bands. The Gd-doped WO3’s band structure shows few states across the Fermi level, which means that the material is metal or semimetal. After the doping of Gd, WO3 becomes the degenerate semiconductor with a bandgap of 2 eV. The energy difference between ferromagnetic (FM) and antiferromagnetic (AFM) configurations is negative, so the Gd-doped WO3 system is AFM. The pure WO3 is nonmagnetic, where the magnetic moment in the system after doping Gd is 9.5599575 μB.

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41

FUCHS, F., and F. POUPAUD. "ASYMPTOTICAL AND NUMERICAL ANALYSIS OF DEGENERACY EFFECTS ON THE DRIFT-DIFFUSION EQUATIONS FOR SEMICONDUCTORS." Mathematical Models and Methods in Applied Sciences 05, no. 08 (1995): 1093–111. http://dx.doi.org/10.1142/s0218202595000577.

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A current approximation for modeling electron transport in semiconductor devices is to assume small electron density. Through this method nondegenerate models are obtained. Here we present an asymptotical analysis of that approximation on the drift-diffusion equation. The numerical approximations of the degenerate and nondegenerate equations are then compared. A modified Scharfetter-Gummel scheme which integrates the degenerate drift-diffusion equation is proposed for comparison.

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42

Ricci, Francesco, Alexander Dunn, Anubhav Jain, Gian-Marco Rignanese, and Geoffroy Hautier. "Gapped metals as thermoelectric materials revealed by high-throughput screening." Journal of Materials Chemistry A 8, no. 34 (2020): 17579–94. http://dx.doi.org/10.1039/d0ta05197g.

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Gapped metals present in their band structure a gap near the Fermi level. This key feature makes these metals comparable to degenerate semiconductors and thus suitable as thermoelectrics. The present screening searches them systematically.

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43

Jyegal, Jang. "Thermal Energy Diffusion Incorporating Generalized Einstein Relation for Degenerate Semiconductors." Applied Sciences 7, no. 8 (2017): 773. http://dx.doi.org/10.3390/app7080773.

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44

Efanov, A. V. "Wave functions of hot excitons in semiconductors with degenerate bands." Semiconductors 42, no. 6 (2008): 642–47. http://dx.doi.org/10.1134/s106378260806002x.

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45

Idrish Miah, M. "Spin-dependent Hall effect in degenerate semiconductors: a theoretical study." Physica Scripta 78, no. 4 (2008): 045302. http://dx.doi.org/10.1088/0031-8949/78/04/045302.

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46

Portier, Josik, Guy Campet, Armel Poquet, Corinne Marcel, and M. A. Subramanian. "Degenerate semiconductors in the light of electronegativity and chemical hardness." International Journal of Inorganic Materials 3, no. 7 (2001): 1039–43. http://dx.doi.org/10.1016/s1466-6049(01)00074-5.

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47

Kleinpenning, T. G. M., та J. Bisschop. "On the noise parameter α in degenerate semiconductors and metals". Physica B+C 128, № 1 (1985): 84–87. http://dx.doi.org/10.1016/0378-4363(85)90088-9.

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48

Zamponi, Nicola, and Ansgar Jüngel. "Global existence analysis for degenerate energy-transport models for semiconductors." Journal of Differential Equations 258, no. 7 (2015): 2339–63. http://dx.doi.org/10.1016/j.jde.2014.12.007.

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49

Auslender, M. I., and V. Yu Irkhin. "Density-of-states and tunneling phenomena in degenerate ferromagnetic semiconductors." Solid State Communications 56, no. 8 (1985): 701–3. http://dx.doi.org/10.1016/0038-1098(85)90782-3.

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50

Nagaev, E. L. "Resistivity and magnetoresistance of degenerate ferromagnetic semiconductors with double exchange." Physics Letters A 215, no. 5-6 (1996): 321–25. http://dx.doi.org/10.1016/0375-9601(96)00190-9.

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