Academic literature on the topic 'Detecteur semiconducteur'

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Journal articles on the topic "Detecteur semiconducteur"

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Brodyn, M. S. "Dual-Energy Semiconductor Detector of X-Rays and Gamma Radiation." Science and innovation 10, no. 2 (2014): 45–49. http://dx.doi.org/10.15407/scine10.02.045.

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Chow, Colin Ming Earn, Hongyi Yu, John R. Schaibley, et al. "Monolayer Semiconductor Auger Detector." Nano Letters 20, no. 7 (2020): 5538–43. http://dx.doi.org/10.1021/acs.nanolett.0c02190.

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Fortenberry, R. M., A. J. Lowery, and R. S. Tucker. "Up to 16 dB improvement in detected voltage using two-section semiconductor optical amplifier detector." Electronics Letters 28, no. 5 (1992): 474. http://dx.doi.org/10.1049/el:19920299.

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Schmidt, Sharon K., Ronald L. Cook, and Anthony F. Sammells. "Semiconductor Redox Polymer Detector Junctions." Journal of The Electrochemical Society 133, no. 8 (1986): 1617–20. http://dx.doi.org/10.1149/1.2108977.

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Baker, K. L., R. E. Stewart, P. T. Steele, S. P. Vernon, and W. W. Hsing. "Ultrafast semiconductor x-ray detector." Applied Physics Letters 101, no. 3 (2012): 031107. http://dx.doi.org/10.1063/1.4736411.

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Ochs, T. R., B. L. Beatty, S. L. Bellinger, et al. "Wearable detector device utilizing microstructured semiconductor neutron detector technology." Radiation Physics and Chemistry 155 (February 2019): 164–72. http://dx.doi.org/10.1016/j.radphyschem.2018.08.028.

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Mustafaev, A. G., G. A. Mustafaev, and N. V. Cherkesova. "Modeling of Semiconductor Thermal Neutron Detector." Nano- i Mikrosistemnaya Tehnika 20, no. 12 (2018): 707–12. http://dx.doi.org/10.17587/nmst.20.707-712.

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Kastalsky, A., S. Luryi, and B. Spivak. "Semiconductor high-energy radiation scintillation detector." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 565, no. 2 (2006): 650–56. http://dx.doi.org/10.1016/j.nima.2006.05.125.

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Pentoney, Stephen L., Richard N. Zare, and Jeff F. Quint. "Semiconductor radioisotope detector for capillary electrophoresis." Journal of Chromatography A 480 (January 1989): 259–70. http://dx.doi.org/10.1016/s0021-9673(01)84293-x.

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Sengupta, D. L., T. K. Sarkar, and D. Sen. "Centennial of the semiconductor diode detector." Proceedings of the IEEE 86, no. 1 (1998): 235–43. http://dx.doi.org/10.1109/5.658775.

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Dissertations / Theses on the topic "Detecteur semiconducteur"

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FASASI, MUSIBAU. "Modelisations des reponses du silicium et du tellure de cadmium aux rayonnements gamma et neutron : applications a la dosimetrie." Université Louis Pasteur (Strasbourg) (1971-2008), 1987. http://www.theses.fr/1987STR13128.

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Modelisation des reponses des detecteurs a semiconducteurs lorsque ceux-ci sont utilises en mode de comptage en vue de leur application a la dosimetrie gamma et neutron (thermique et rapide). A l'aide de trois programmesm de monte carlo, les valeurs optimales des parametres necessaires pour la mise au point des dosimetres individuels sont obtenues
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Phi, Hoa Binh. "Realisation d'amplificateurs electriques a haute performance pour detecteurs optiques : application a la detection de la photoconductivite." Toulouse, INSA, 1987. http://www.theses.fr/1987ISAT0023.

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Amplificateurs a tres bas bruit pour photodetecteurs optiques au germanium. Detection du courant photoinduit dans des echantillons semiconducteurs de tres haute impedance. Detection de signaux optiques ultra-rapides
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MOGUILINE, ERIC. "Evaluation et developpement de detecteurs semiconducteurs pour la spectroscopie d'absorption x." Université Joseph Fourier (Grenoble), 1996. http://www.theses.fr/1996GRE10240.

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Divers types de detecteurs en silicium ont ete developpes pour la spectroscopie d'absorption x: des photodiodes sont utilisees comme moniteurs d'intensite et de position ; des detecteurs a champ de derive ont ete concus pour l'analyse de la fluorescence x en dispersion d'energie. La premiere partie du memoire rappelle le principe de la spectroscopie d'absorption x et les aspects experimentaux essentiels sont decrits. Les problemes specifiques aux divers modes de detection sont analyses, ainsi que leur incidence sur les caracteristiques des detecteurs. La deuxieme partie concerne les photodiode
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Casse, Gianluigi. "The effect of hadron irradiation on the electrical properties of particle detectors made from various silicon materials." Université Joseph Fourier (Grenoble), 1998. http://www.theses.fr/1998GRE10112.

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Les detecteurs au silicium, dont l'utilisation est prevue dans les futures experiences de physique des hautes energies (lhc au cern) devront soutenir un tres haut niveau de radiation. La defaillance des detecteurs plus exposes est attendue apres quelques annees d'operations. Un grand interet est pourtant devolue a l'etude des changements provoques par les radiations dans les detecteurs et a l'amelioration de la resistance aux radiations de ceux-ci. L'introduction d'impuretes dans le cristal de silicium peut influencer la tenue aux radiations. Les impuretes forment des complexes avec les defaut
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Gérard, Pascal. "Système de détection utilisant une diode pin pour l'analyse des répartitions énergétique et spatiale d'électrons rétrodiffusés." Toulouse 3, 1993. http://www.theses.fr/1993TOU30022.

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Nous presentons les etudes experimentales et theoriques, dans le domaine des basses energies (inferieures a 50 kev), des distributions angulaires et energetiques des electrons retrodiffuses par des cibles polycristallines d'or et de silicium. L'element principal du dispositif experimental, place dans un microscope electronique a balayage, est un detecteur semiconducteur type diode pin refroidie a 100 k. La mobilite du systeme de detection, autour du point d'impact du faisceau incident, permet une etude systematique de la distribution en energie des electrons retrodiffuses en fonction de leur a
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Dezillie, Britta. "Étude de la tenue aux radiations de détecteurs de particules en silicium épitaxial pour leurs utilisaitons au LHC du CERN." Université Joseph Fourier (Grenoble ; 1971-2015), 1997. http://www.theses.fr/1997GRE10146.

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Dans les experiences futures dans le lhc de cern on veut utiliser des detecteurs de silicium de haute precision. Le composent hadronique influence le temps de vie des detecteurs. La tenue aux irradiations du silicium peut etre amelioree par l'etude des defauts. Cette etude implique l'addition des impuretes au silicium afin de former des centres de defauts qui sont actives d'une maniere electrique. Ceux ci controlent les parametres macroscopiques des echantillons. Les ingredients principales a examiner sont l'oxygene et le carbone parce qu'ils se comportent comme consommateurs des vacances et d
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Rossi, Giuseppe Germano. "Etude de la réponse au rayonnement X entre 10KeV-100KeV des détecteurs à micro-pistes de germanium avec résolution spatiale et en énergie." Université Joseph Fourier (Grenoble), 1997. http://www.theses.fr/1997GRE10089.

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Dans le cadre d'un developpement d'un detecteur avec resolution spatiale et en energie pour comptage de photons dans des experiences de diffusion compton, nous avons etudie, au sein de l'esrf-grenoble, les performances de deux capteurs de germanium a micro-pistes. Ces deux detecteurs, issus de deux differentes technologies de fabrication, ont une resolution en energie associee a une resolution spatiale correspondante a leur pas de pistes de 200m. Nous avons valide l'utilisation d'une nouvelle plaquette multicouches connectante a tres haute densite les pistes du capteur meme, refroidi a l'azote
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Tiphène, Didier. "Etude à basse température (4.2 k) du fonctionnement d'une matrice de détection InSb-Mis, à lecture CID, sous très faible flux de photons : applications astronomiques." Phd thesis, Université Paris Sud - Paris XI, 1987. http://tel.archives-ouvertes.fr/tel-00725271.

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Cette étude révèle le comportement d'une matrice de détection infrarouge portée à la température de l'hélium liquide (4.2K). La Société Anonyme de Télécommunications (France) réalise la matrice de détection 32x32 éléments senseurs, à lecture CID (Charge Injected Devices) sur susbtrat InSb (antimoniure d'indium). Son utilisation à la température de l'hélium liquide est différente de celle prévue par son fabricant (77 K). En particulier, le comportement du courant d'obscurité varie fortement entre ces deux valeurs de T. Seul le courant tunnel est encore actif à la température de l'hélium liquide
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Montemont, Guillaume. "Optimisation des performances de détecteurs CdTe et CdZnTe en spectrométrie gamma." Université Joseph Fourier (Grenoble ; 1971-2015), 2000. http://www.theses.fr/2000GRE10172.

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Cette etude porte sur la detection spectrometrique gamma a base de detecteurs en materiaux semi-conducteurs cdte et cdznte, a temperature ambiante. Le but en etait l'amelioration des performances en resolution energetique et efficacite de detection. Pour cela, il a fallu analyser divers phenomenes. La nature du bruit electronique a ete etudiee, ce qui nous a permis d'optimiser son filtrage par l'electronique de traitement. Par ailleurs, en prenant en compte les problemes de transport des charges, nous avons concu des traitements electroniques s'adaptant a la variabilite des signaux mesures. La
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Even, Raymond. "Les premiers semiconducteurs moleculaires : les derives radicalaires des phtalocyanines." Paris 6, 1987. http://www.theses.fr/1987PA066161.

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Synthese de composes pc::(2)lu, pc::(2)ln(ln = yb,tm,dy,nd) a l'etat de grande purete et etude de leurs proprietes electriques intrinseques, ainsi que de celles de pcli, sur monocristaux et sur couches minces; mise en evidence de la possibilite de dopage de pc::(2)lu avec des composes organiques donneurs et accepteurs et avec pcli. Etude de l'absorption optique et observation de bandes de transfert de charge intramoleculaire, confirmee par ailleurs par rpe. Possibilite d'application de couches minces de pclu a la detection de gaz
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Books on the topic "Detecteur semiconducteur"

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Fossum, Eric R. Hybridization of detector array and integrated circuit for readout. National Aeronautics and Space Administration, 1992.

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Hard X-Ray, Gamma-Ray, and Neutron Detector Physics (Conference) (15th 2013 San Diego, Calif.). Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XV: 26-28 August 2013, San Diego, California, United States. Edited by Fiederle, Michael, editor of compilation and SPIE (Society). SPIE, 2013.

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James, R. B., Larry A. Franks, and Arnold Burger. Hard x-ray, gamma-ray, and neutron detector physics XII: 2-4 August 2010, San Diego, California, United States. Edited by SPIE (Society). SPIE, 2010.

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(Society), SPIE, ed. Hard X-ray, gamma-ray, and neutron detector physics XI: 3-6 August 2009, San Diego, California, United States. SPIE, 2009.

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(Society), SPIE, ed. Hard X-ray, gamma-ray, and neutron detector physics XIII: 22-24 August 2011, San Diego, California, United States. SPIE, 2011.

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James, R. B., Larry A. Franks, and Arnold Burger. Hard x-ray, gamma-ray, and neutron detector physics XII: 2-4 August 2010, San Diego, California, United States. Edited by SPIE (Society). SPIE, 2010.

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Society of Photo-optical Instrumentation Engineers, ed. Hard X-ray and gamma-ray detector physics IX: 27-29 August 2007, San Diego, California, USA. SPIE, 2007.

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Spieler, Helmuth. Semiconductor Detector Systems (Semiconductor Science and Technology). Oxford University Press, USA, 2005.

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Hirohata, A., and J. Y. Kim. Optically Induced and Detected Spin Current. Oxford University Press, 2017. http://dx.doi.org/10.1093/oso/9780198787075.003.0006.

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This chapter presents an alternative method of injecting spin-polarized electrons into a nonmagnetic semiconductor through photoexcitation. This method uses circularly-polarized light, whose energy needs to be the same as, or slightly larger than, the semiconductor band-gap, to excite spin-polarized electrons. This process will introduce a spin-polarized electron-hole pair, which can be detected as electrical signals. Such an optically induced spin-polarized current can only be generated in a direct band-gap semiconductor due to the selection rule described in the following sections. This intr
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Green, Stuart, Robert G. Zamenhof, and Denise E. Delahunty. Radiation measurement. Oxford University Press, 2015. http://dx.doi.org/10.1093/med/9780199655212.003.0004.

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The ability to make accurate and reproducible measurements requires a detailed knowledge of radiation detection mechanisms, quantities to be measured, basic measurement techniques, and assessment of measurement uncertainties. The chapter begins with an overview of the operational dose quantities and the mechanisms by which measurements are traced to a suitable primary standard. This is followed by some tips on detector selection for both dose rate and contamination applications, before a more detailed description of the basic functional characteristics of gas detectors, scintillation detectors
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Book chapters on the topic "Detecteur semiconducteur"

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Lutz, Gerhard. "Detector Technology." In Semiconductor Radiation Detectors. Springer Berlin Heidelberg, 2007. http://dx.doi.org/10.1007/978-3-540-71679-2_10.

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Owens, Alan. "Detector Fabrication." In Semiconductor Radiation Detectors. CRC Press, 2019. http://dx.doi.org/10.1201/b22251-6.

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Owens, Alan. "Detector Characterization." In Semiconductor Radiation Detectors. CRC Press, 2019. http://dx.doi.org/10.1201/b22251-7.

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Takeuchi, Wataru, Atsuro Suzuki, Yuichiro Ueno, et al. "Semiconductor Detector-Based Scanners for Nuclear Medicine." In Perspectives on Nuclear Medicine for Molecular Diagnosis and Integrated Therapy. Springer Japan, 2016. http://dx.doi.org/10.1007/978-4-431-55894-1_4.

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Frühwirth, Rudolf, and Are Strandlie. "Tracking Detectors." In Pattern Recognition, Tracking and Vertex Reconstruction in Particle Detectors. Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-65771-0_1.

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AbstractThe chapter gives an overview of particle detectors, with the emphasis on tracking detectors. The working principles and the calibration of gaseous, semiconductor, and fiber detectors are explained, followed by a brief review of detector alignment. As an illustration, the tracking systems of the four experiments at the LHC and two non-LHC experiments, Belle II and CBM, are presented.
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Dixit, Awakash, Vikash Porwal, Aditya K. Mamgain, and S. K. Mishra. "High Resolution Quadrant Detector Based Tip-tilt Sensor for Adaptive Optics." In Physics of Semiconductor Devices. Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_126.

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Ogawa, K., T. Ishikawa, K. Shuto, N. Motomura, and H. Kobayashi. "Performance of Semiconductor Gamma-Camera System with CdZnTe Detector." In IFMBE Proceedings. Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-540-89208-3_198.

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Jakšić, Zoran. "Introduction: A Path to an Ideal Photonic Infrared Detector." In Micro and Nanophotonics for Semiconductor Infrared Detectors. Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-09674-2_1.

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Fukizawa, Mizuho, and Koichi Ogawa. "SPECT imaging with a semiconductor detector and a diverging collimator." In IFMBE Proceedings. Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-540-89208-3_200.

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Gerlach-Meyer, Ursula, Eberhard Gmelin, and Hans J. Queisser. "Ballistic Electron Transport Detected by Seebeck Voltage Measurements on Semiconductor Micro-Contacts." In Proceedings of the 17th International Conference on the Physics of Semiconductors. Springer New York, 1985. http://dx.doi.org/10.1007/978-1-4615-7682-2_296.

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Conference papers on the topic "Detecteur semiconducteur"

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Andrews, S. R., and R. T. Harley. "Optically Detected Tunnelling Between Quantum Wells." In Semiconductor Conferences, edited by Gottfried H. Doehler and Joel N. Schulman. SPIE, 1987. http://dx.doi.org/10.1117/12.940832.

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Shah, Kanai S. "Tl-based semiconductor and scintillators (Conference Presentation)." In Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVIII, edited by Michael Fiederle, Arnold Burger, Larry Franks, and Ralph B. James. SPIE, 2016. http://dx.doi.org/10.1117/12.2240060.

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He, Zhong. "Pixelated semiconductor detectors for gamma-ray spectroscopy." In Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXIII, edited by Nerine J. Cherepy, Michael Fiederle, and Ralph B. James. SPIE, 2021. http://dx.doi.org/10.1117/12.2596224.

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Payne, Stephen A., Erik Swanberg, Sean O'Neal, et al. "Cathode waveform analysis of TlBr semiconductor detectors (Conference Presentation)." In Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXI, edited by Arnold Burger, Ralph B. James, and Stephen A. Payne. SPIE, 2019. http://dx.doi.org/10.1117/12.2530334.

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Becla, Piotr, Amlan Datta, and Shariar Motakef. "Large area thallium bromide semiconductor radiation detectors with thallium contacts." In Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XX, edited by Michael Fiederle, Arnold Burger, Ralph B. James, and Stephen A. Payne. SPIE, 2018. http://dx.doi.org/10.1117/12.2319351.

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Roy, Utpal N., Giuseppe Camarda, Yonggang Cui, et al. "CdZnTeSe: An emerging room-temperature semiconductor detector material (Conference Presentation)." In Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XX, edited by Michael Fiederle, Arnold Burger, Ralph B. James, and Stephen A. Payne. SPIE, 2018. http://dx.doi.org/10.1117/12.2324148.

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Toufanian, Reyhaneh, Amlan Datta, Piotr Becla, Bianca Boschetti, and Shariar Motakef. "Cesium lead bromide semiconductor-based gamma detectors: challenges and solutions." In Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXIII, edited by Nerine J. Cherepy, Michael Fiederle, and Ralph B. James. SPIE, 2021. http://dx.doi.org/10.1117/12.2596533.

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Burdick, Bill, Jeff Erlbaum, Kaustubh Nagarkar, et al. "Highly Manufacturable and Reliable CZT Detectors." In ASME 2013 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems. American Society of Mechanical Engineers, 2013. http://dx.doi.org/10.1115/ipack2013-73314.

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Cadmium Zinc Telluride (CZT) based radiation detectors have been developed over the past decade and are, increasingly, being used in security and healthcare applications. Improvements in radiation detector performance, size, and cost have been achieved; however, the manufacturability and reliability of the individual CZT detector package continues to limit widespread use and new applications. To date, most CZT detector packages are designed, manufactured, and tested to requirements defined by manufacturers, rather than military, commercial, or industry standards, as is common for semiconductor
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Gutmann, R. J., J. M. Borrego, C. S. Lo, M. C. Heimlich, and O. Paz. "Microwave-Detected Photoconductivity-Transient Spectroscopy For Non-Destructive Evaluation Of Gaas Wafers." In Semiconductor Conferences, edited by Orest J. Glembocki, Fred H. Pollak, and Jin-Joo Song. SPIE, 1987. http://dx.doi.org/10.1117/12.940903.

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Brambilla, A., P. Ouvrier-Buffet, G. Gonon, J. Rinkel, L. Verger, and C. Boudou. "CdTe and CdZnTe semiconductor detector arrays for fast spectroscopic x-ray imaging." In Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XI. SPIE, 2009. http://dx.doi.org/10.1117/12.830059.

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Reports on the topic "Detecteur semiconducteur"

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Schmidt, Sharon K., Ronald L. Cook, and Anthony F. Sammells. Characterization of Illuminated Semiconductor/Solid-Electrolyte Junctions. Semiconductor Redox Polymer Detector Junctions. Defense Technical Information Center, 1985. http://dx.doi.org/10.21236/ada167665.

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Bellinger, Steven L. Wide-Bandgap Microstructured Semiconductor Neutron Detector Final Technical Report. Office of Scientific and Technical Information (OSTI), 2018. http://dx.doi.org/10.2172/1423867.

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Roecker, Caleb Daniel, and Richard C. Schirato. Wide Bandgap Semiconductor Detector Optimization for Flash X-Ray Measurements. Office of Scientific and Technical Information (OSTI), 2017. http://dx.doi.org/10.2172/1409799.

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Chen, Ying. Optically Detected Magnetic Resonance Studies on π-conjugated semiconductor systems. Office of Scientific and Technical Information (OSTI), 2011. http://dx.doi.org/10.2172/1048514.

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Knoll, G. F. Advanced radiation detector development: Advanced semiconductor detector development: Development of a oom-temperature, gamma ray detector using gallium arsenide to develop an electrode detector. Office of Scientific and Technical Information (OSTI), 1995. http://dx.doi.org/10.2172/125360.

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Knoll, G. F. Advanced semiconductor detector development: Development of a room-temperature, gamma ray detector using gallium arsenide to develop an electrode detector. Progress report, September 30, 1994--September 29, 1995. Office of Scientific and Technical Information (OSTI), 1995. http://dx.doi.org/10.2172/111840.

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Knoll, G. F. Advanced radiation detector development: Advanced semiconductor detector development: Development of a room-temperature, gamma ray detector using gallium arsenide to develop an electrode detector. Annual progress report, September 30, 1994--September 29, 1995. Office of Scientific and Technical Information (OSTI), 1995. http://dx.doi.org/10.2172/188626.

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Semendy, Fred, Patrick Taylor, Gregory Meissner, and Priyalal Wijewarnasuriya. MSM-Metal Semiconductor Metal Photo-detector Using Black Silicon Germanium (SiGe) for Extended Wavelength Near Infrared Detection. Defense Technical Information Center, 2012. http://dx.doi.org/10.21236/ada568787.

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Sfyrla, Anna. Search for WW and WZ production in lepton, neutrino plus jets final states at CDF Run II and Silicon module production and detector control system for the ATLAS SemiConductor Tracker. Office of Scientific and Technical Information (OSTI), 2008. http://dx.doi.org/10.2172/935479.

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