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Dissertations / Theses on the topic 'Detecteur semiconducteur'

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Published: 4 June 2021

Last updated: 3 February 2022

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1

FASASI, MUSIBAU. "Modelisations des reponses du silicium et du tellure de cadmium aux rayonnements gamma et neutron : applications a la dosimetrie." Université Louis Pasteur (Strasbourg) (1971-2008), 1987. http://www.theses.fr/1987STR13128.

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Modelisation des reponses des detecteurs a semiconducteurs lorsque ceux-ci sont utilises en mode de comptage en vue de leur application a la dosimetrie gamma et neutron (thermique et rapide). A l'aide de trois programmesm de monte carlo, les valeurs optimales des parametres necessaires pour la mise au point des dosimetres individuels sont obtenues

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2

Phi, Hoa Binh. "Realisation d'amplificateurs electriques a haute performance pour detecteurs optiques : application a la detection de la photoconductivite." Toulouse, INSA, 1987. http://www.theses.fr/1987ISAT0023.

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Amplificateurs a tres bas bruit pour photodetecteurs optiques au germanium. Detection du courant photoinduit dans des echantillons semiconducteurs de tres haute impedance. Detection de signaux optiques ultra-rapides

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3

MOGUILINE, ERIC. "Evaluation et developpement de detecteurs semiconducteurs pour la spectroscopie d'absorption x." Université Joseph Fourier (Grenoble), 1996. http://www.theses.fr/1996GRE10240.

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Divers types de detecteurs en silicium ont ete developpes pour la spectroscopie d'absorption x: des photodiodes sont utilisees comme moniteurs d'intensite et de position ; des detecteurs a champ de derive ont ete concus pour l'analyse de la fluorescence x en dispersion d'energie. La premiere partie du memoire rappelle le principe de la spectroscopie d'absorption x et les aspects experimentaux essentiels sont decrits. Les problemes specifiques aux divers modes de detection sont analyses, ainsi que leur incidence sur les caracteristiques des detecteurs. La deuxieme partie concerne les photodiode

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4

Casse, Gianluigi. "The effect of hadron irradiation on the electrical properties of particle detectors made from various silicon materials." Université Joseph Fourier (Grenoble), 1998. http://www.theses.fr/1998GRE10112.

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Les detecteurs au silicium, dont l'utilisation est prevue dans les futures experiences de physique des hautes energies (lhc au cern) devront soutenir un tres haut niveau de radiation. La defaillance des detecteurs plus exposes est attendue apres quelques annees d'operations. Un grand interet est pourtant devolue a l'etude des changements provoques par les radiations dans les detecteurs et a l'amelioration de la resistance aux radiations de ceux-ci. L'introduction d'impuretes dans le cristal de silicium peut influencer la tenue aux radiations. Les impuretes forment des complexes avec les defaut

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5

Gérard, Pascal. "Système de détection utilisant une diode pin pour l'analyse des répartitions énergétique et spatiale d'électrons rétrodiffusés." Toulouse 3, 1993. http://www.theses.fr/1993TOU30022.

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Nous presentons les etudes experimentales et theoriques, dans le domaine des basses energies (inferieures a 50 kev), des distributions angulaires et energetiques des electrons retrodiffuses par des cibles polycristallines d'or et de silicium. L'element principal du dispositif experimental, place dans un microscope electronique a balayage, est un detecteur semiconducteur type diode pin refroidie a 100 k. La mobilite du systeme de detection, autour du point d'impact du faisceau incident, permet une etude systematique de la distribution en energie des electrons retrodiffuses en fonction de leur a

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6

Dezillie, Britta. "Étude de la tenue aux radiations de détecteurs de particules en silicium épitaxial pour leurs utilisaitons au LHC du CERN." Université Joseph Fourier (Grenoble ; 1971-2015), 1997. http://www.theses.fr/1997GRE10146.

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Dans les experiences futures dans le lhc de cern on veut utiliser des detecteurs de silicium de haute precision. Le composent hadronique influence le temps de vie des detecteurs. La tenue aux irradiations du silicium peut etre amelioree par l'etude des defauts. Cette etude implique l'addition des impuretes au silicium afin de former des centres de defauts qui sont actives d'une maniere electrique. Ceux ci controlent les parametres macroscopiques des echantillons. Les ingredients principales a examiner sont l'oxygene et le carbone parce qu'ils se comportent comme consommateurs des vacances et d

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7

Rossi, Giuseppe Germano. "Etude de la réponse au rayonnement X entre 10KeV-100KeV des détecteurs à micro-pistes de germanium avec résolution spatiale et en énergie." Université Joseph Fourier (Grenoble), 1997. http://www.theses.fr/1997GRE10089.

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Dans le cadre d'un developpement d'un detecteur avec resolution spatiale et en energie pour comptage de photons dans des experiences de diffusion compton, nous avons etudie, au sein de l'esrf-grenoble, les performances de deux capteurs de germanium a micro-pistes. Ces deux detecteurs, issus de deux differentes technologies de fabrication, ont une resolution en energie associee a une resolution spatiale correspondante a leur pas de pistes de 200m. Nous avons valide l'utilisation d'une nouvelle plaquette multicouches connectante a tres haute densite les pistes du capteur meme, refroidi a l'azote

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8

Tiphène, Didier. "Etude à basse température (4.2 k) du fonctionnement d'une matrice de détection InSb-Mis, à lecture CID, sous très faible flux de photons : applications astronomiques." Phd thesis, Université Paris Sud - Paris XI, 1987. http://tel.archives-ouvertes.fr/tel-00725271.

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Cette étude révèle le comportement d'une matrice de détection infrarouge portée à la température de l'hélium liquide (4.2K). La Société Anonyme de Télécommunications (France) réalise la matrice de détection 32x32 éléments senseurs, à lecture CID (Charge Injected Devices) sur susbtrat InSb (antimoniure d'indium). Son utilisation à la température de l'hélium liquide est différente de celle prévue par son fabricant (77 K). En particulier, le comportement du courant d'obscurité varie fortement entre ces deux valeurs de T. Seul le courant tunnel est encore actif à la température de l'hélium liquide

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9

Montemont, Guillaume. "Optimisation des performances de détecteurs CdTe et CdZnTe en spectrométrie gamma." Université Joseph Fourier (Grenoble ; 1971-2015), 2000. http://www.theses.fr/2000GRE10172.

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Cette etude porte sur la detection spectrometrique gamma a base de detecteurs en materiaux semi-conducteurs cdte et cdznte, a temperature ambiante. Le but en etait l'amelioration des performances en resolution energetique et efficacite de detection. Pour cela, il a fallu analyser divers phenomenes. La nature du bruit electronique a ete etudiee, ce qui nous a permis d'optimiser son filtrage par l'electronique de traitement. Par ailleurs, en prenant en compte les problemes de transport des charges, nous avons concu des traitements electroniques s'adaptant a la variabilite des signaux mesures. La

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10

Even, Raymond. "Les premiers semiconducteurs moleculaires : les derives radicalaires des phtalocyanines." Paris 6, 1987. http://www.theses.fr/1987PA066161.

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Synthese de composes pc::(2)lu, pc::(2)ln(ln = yb,tm,dy,nd) a l'etat de grande purete et etude de leurs proprietes electriques intrinseques, ainsi que de celles de pcli, sur monocristaux et sur couches minces; mise en evidence de la possibilite de dopage de pc::(2)lu avec des composes organiques donneurs et accepteurs et avec pcli. Etude de l'absorption optique et observation de bandes de transfert de charge intramoleculaire, confirmee par ailleurs par rpe. Possibilite d'application de couches minces de pclu a la detection de gaz

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11

Solomon, Clell J. Jr. "Analysis and characterization of perforated neutron detectors." Thesis, Manhattan, Kan. : Kansas State University, 2007. http://hdl.handle.net/2097/328.

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12

Chang, I. T. H. "Rapidly solidified infrared detector materials." Thesis, University of Oxford, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.303611.

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13

Fronk, Ryan. "Dual-side etched microstructured semiconductor neutron detectors." Diss., Kansas State University, 2017. http://hdl.handle.net/2097/35405.

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Doctor of Philosophy<br>Department of Mechanical and Nuclear Engineering<br>Douglas S. McGregor<br>Interest in high-efficiency replacements for thin-film-coated thermal neutron detectors led to the development of single-sided microstructured semiconductor neutron detectors (MSNDs). MSNDs are designed with micro-sized trench structures that are etched into a vertically-oriented pvn-junction diode, and backfilled with a neutron converting material, such as 6LiF. Neutrons absorbed by the converting material produce a pair of charged-particle reaction products that can be measured by the diode sub

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14

Garnache, Arnaud. "Etude et réalisation de nouveaux types de lasers proche infrarouge pour la spectroscopie d'absorption intracavité laser : dynamique des lasers fortement multimodes." Université Joseph Fourier (Grenoble), 1999. http://www.theses.fr/1999GRE10256.

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Des nouveaux lasers large bande tout solide emettant dans le proche-ir fonctionnant en continu et a temperature ambiante ont ete developpes. Apres une etude fine des cavites lasers et de la dynamique spectro-temporelle, ces systemes ont ete utilises en spectroscopie d'absorption a haute sensibilite et resolution par intracavite laser. Les performances limites ont ete etudiees experimentalement, theoriquement et a l'aide de simulations numeriques. Un systeme laser prometteur base sur l'utilisation de structure a semiconducteur a multipuits quantiques du type vcsel a cavite externe, pompe par di

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15

Bellinger, Steven Lawrence. "Advanced microstructured semiconductor neutron detectors: design, fabrication, and performance." Diss., Kansas State University, 2011. http://hdl.handle.net/2097/14868.

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Doctor of Philosophy<br>Department of Mechanical and Nuclear Engineering<br>Douglas S. McGregor<br>The microstructured semiconductor neutron detector (MSND) was investigated and previous designs were improved and optimized. In the present work, fabrication techniques have been refined and improved to produce three-dimensional microstructured semiconductor neutron detectors with reduced leakage current, reduced capacitance, highly anisotropic deep etched trenches, and increased signal-to-noise ratios. As a result of these improvements, new MSND detection systems function with better gamma-ray d

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16

Bonnet-Gamard, Joël. "Emission stimulée dans les hétérostructures à base de CdHgTe." Université Joseph Fourier (Grenoble), 1996. http://www.theses.fr/1996GRE10150.

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Nous etudions les phenomenes d'emission stimulee dans les heterostructures a base de cdhgte emettant dans l'infrarouge moyen. Nous montrons que, a basse temperature, si les etats extrinseques et de queue de bande dans le gap dominent les spectres de photoluminescence sous faible excitation, leur influence sur les mecanismes d'emission stimulee est faible: l'emission laser apparait toujours pres de la transition intrinseque, le gain sur les etats extrinseques atteignant une valeur insuffisante pour compenser les pertes. Dans un deuxieme temps, nous caracterisons les performances de ces heterost

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17

Cabrera, George. "Broadband RF current detector." FIU Digital Commons, 1994. http://digitalcommons.fiu.edu/etd/1955.

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The problems to be solved in this thesis were 1) development of a broadband RF preamplifier to be used with non-ferrous current probes so that the amplified signal exceeds the errors due to cable pickup, no detection is needed in this application, and 2) development of a self-contained device that amplifies and detects the output from a nonferrous current probe, providing a digital readout of the current. These instruments have been completed and are being tested for use by the National Institutes of Occupational Safety and Health (NIOSH). The self-contained current meter operates at frequenci

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18

Peters, Chris (Christopher Joseph) Carleton University Dissertation Engineering Electrical. "MOSFET based gamma radiation detector." Ottawa, 1992.

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19

Lang, Volker. "Electrically detected magnetic resonance in semiconductor and carbon nanodevices." Thesis, University of Oxford, 2012. http://ora.ox.ac.uk/objects/uuid:614ed1d1-0304-4356-8bd3-eb0ce7bd6c9d.

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Electrically detected magnetic resonance (EDMR) is a sensitive spectroscopic technique, which can be used to readout few to single electron spins in semiconductor and carbon nanodevices for applications in solid state quantum information processing (QIP). Since only electrically active defects contribute to the EDMR signal, this technique can be used further to investigate defects and impurities in photovoltaic devices, in which they limit the sunlight-to-energy conversion efficiency significantly. Here, I employ X-band EDMR for semiconductor defect analysis and identify the most important rec

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20

Santos, Robinson Alves dos. "Otimização da metodologia de preparação do cristal de brometo de Tálio para sua aplicação como detector de radiação." Universidade de São Paulo, 2012. http://www.teses.usp.br/teses/disponiveis/85/85131/tde-03042012-082535/.

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Neste trabalho, cristais de TlBr foram crescidos e purificados pelo método de Bridgman Repetido a partir de sais comerciais de TlBr e caracterizados para serem usados como detectores de radiação à temperatura ambiente. Para avaliar a eficiência de purificação, estudos da diminuição da concentração de impurezas foram feitos após cada crescimento, analisando as impurezas traços por Espectrometria de Massas com Plasma (ICP-MS). Um decréscimo significativo da concentração de impurezas em função do número de purificações foi observado. Os cristais crescidos apresentaram boa qualidade cristalina de

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21

Henderson, Christopher M. Jr. "Characterization of high efficiency neutron detector linear arrays." Thesis, Manhattan, Kan. : Kansas State University, 2009. http://hdl.handle.net/2097/2126.

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22

Kandlakunta, Praneeth. "Gamma Rays Rejection in a Gadolinium based Semiconductor Neutron Detector." The Ohio State University, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=osu1386883923.

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23

Bassignana, Daniela. "New technologies of silicon position-sensitive detectors for future tracker systems." Doctoral thesis, Universitat Autònoma de Barcelona, 2012. http://hdl.handle.net/10803/97361.

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En vista de la nueva generación de colisionadores de alta luminosidad, HL-LHC y ILC, se hace necesaria una investigación más profunda del diseño y de la tecnología de los detectores de radiaciones basados en silicio, al fin de satisfacer las peticiones de los experimentos en maquinas tan sofisticadas. En esta tesis se presentan tecnologías innovadoras de detectores de radiaciones basados en silicio para futuros trazadores. Tres diferentes dispositivos han sido estudiados y diseñados con la ayuda de diferentes herramientas de simulación. Luego, han sido fabricados en la sala blanca del IMB-C

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MARTINS, JOAO F. T. "Desenvolvimento do cristal semicondutor de iodeto de mercúrio para aplicação como detector de radiação." reponame:Repositório Institucional do IPEN, 2011. http://repositorio.ipen.br:8080/xmlui/handle/123456789/10001.

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Made available in DSpace on 2014-10-09T12:33:41Z (GMT). No. of bitstreams: 0<br>Made available in DSpace on 2014-10-09T14:05:35Z (GMT). No. of bitstreams: 0<br>Dissertação (Mestrado)<br>IPEN/D<br>Instituto de Pesquisas Energéticas e Nucleares - IPEN-CNEN/SP

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Schofield, Paul Anthony. "An investigation of the response mechanism of the nitrogen phosphorus detector." Thesis, Manchester Metropolitan University, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.300730.

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The Nitrogen Phosphorus Detector is a sensitive, selective device used in gas chromatography. It responds selectively towards nitrogen and phosphorus containing organic compounds with detection limits in the picogram range. The detector is of great importance for the measurement of trace levels of drugs, pesticides and herbicides in biological matrices and the environment. There is, however, some dispute in the literature regarding the detector's response mechanism. The detector is based on a hydrogen-air diffusion flame. Two electrodes polarise the flame with a potential difference of about 2

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OLIVEIRA, ICIMONE B. de. "Desenvolvimento e caracterizacao do detector semicondutor de iodeto de chumbo." reponame:Repositório Institucional do IPEN, 2001. http://repositorio.ipen.br:8080/xmlui/handle/123456789/10897.

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Made available in DSpace on 2014-10-09T12:45:16Z (GMT). No. of bitstreams: 0<br>Made available in DSpace on 2014-10-09T14:09:48Z (GMT). No. of bitstreams: 1 07289.pdf: 1409533 bytes, checksum: ae80bf28ff4706eac9069ba157863cf9 (MD5)<br>Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)<br>Dissertacao (Mestrado)<br>IPEN/D<br>Instituto de Pesquisas Energeticas e Nucleares - IPEN/CNEN-SP<br>FAPESP:98/05254-9

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27

Parkin, James. "Properties of Cd₁₋ₓMnₓTe as a room temperature semiconductor radiation detector". Thesis, University of Surrey, 2009. http://epubs.surrey.ac.uk/813160/.

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Cadmium Manganese Telluride (CdMnTe) has many properties that make it an excellent candidate for use as a room temperature radiation detector material. It has a highly tunable band gap, can be grown in large single crystals, and has a high quantum efficiency. To realise the material's potential, however, a great deal more needs to be known about it's electronic properties, and the impurities and defects limiting the charge transport properties. This work investigates the optical and electronic properties of both un-doped and doped CdMnTe in an attempt to clarify the energy levels that exist wi

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Wang, Jinghui. "Evaluation of GaN as a Radiation Detection Material." The Ohio State University, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=osu1343316898.

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Kazemi, Shada. "Design, development and fabrication of a new generation semiconductor X-ray detector." Thesis, University of Surrey, 2010. http://epubs.surrey.ac.uk/843693/.

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X-ray detectors are used in a number of areas, namely in astronomy, microscopy, medical imaging diagnostic, biological science and material analysis. Demand is rising significantly within the industry for X-ray detectors that do not require a cooling system, e.g. pin-diode detectors. The elimination of the cooling system will facilitate the design of portable detectors. Development of this technology opens opportunities for the design of new instruments and the manufacture of more specialist detectors for customised applications. The rapid progress of the semiconductor industry has enabled the

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30

Martín, Albarrán María Elena. "A CMOS pixel vertex detector for the Super KEK-B experiment semiconductor tracker." Doctoral thesis, Universitat Autònoma de Barcelona, 2008. http://hdl.handle.net/10803/5778.

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Martins, João Francisco Trencher. "Desenvolvimento do cristal semicondutor de iodeto de mercúrio para aplicação como detector de radiação." Universidade de São Paulo, 2011. http://www.teses.usp.br/teses/disponiveis/85/85131/tde-16092011-133711/.

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Neste trabalho descreve-se o estudo do estabelecimento de uma técnica para o crescimento e preparo de cristais de HgI2, com o intuito de utilizá-los como detectores semicondutores de radiação que operam a temperatura ambiente. Três métodos de crescimento de cristais foram estudados no desenvolvimento deste trabalho: (1) Transporte Físico de Vapor (Physical Vapor Transport PVT), (2) Solução Saturada de HgI2 empregando dois solventes distintos; Dimetil Sulfóxido (DMSO) (a) e acetona (b) e (3) método de Bridgman. A fim de avaliar os cristais de HgI2 desenvolvidos pelos três métodos, medidas sist

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ZUMBIEHL, ALAIN. "Etude et realisation de detecteurs matriciels monolithiques de rayonnement nucleaire a partir de cristaux semiconducteurs cdte et cdznte." Université Louis Pasteur (Strasbourg) (1971-2008), 2000. http://www.theses.fr/2000STR13216.

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Face aux besoins de plus en plus exigeants des systemes d'imagerie bases sur la detection de rayonnement nucleaire, seuls les detecteurs a semiconducteurs semblent repondre au cahier de charges de maniere satisfaisante. Ce memoire a pour but de continuer le developpement des materiaux cdte et cdznte pour ce type d'applications. La premiere partie de cette these est consacree aux caracterisations des proprietes electriques, c'est-a-dire les proprietes de transport des charges (mobilite et temps de vie), la resistivite et le champ electrique. Ces parametres, avec les besoins en detection recherc

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Foster, Jennifer E. "A comparison of the ZnS(Ag) scintillation detector to the silicon semiconductor detector for quantification of alpha radioactivity in aqueous solutions." Connect to this title online, 2006. http://etd.lib.clemson.edu/documents/1175184798/.

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Unruh, Troy Casey. "Development of a neutron diffraction system and neutron imaging system for beamport characterization." Thesis, Manhattan, Kan. : Kansas State University, 2009. http://hdl.handle.net/2097/2324.

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Eckardt, Michael [Verfasser]. "Electrically detected magnetic resonance on fullerene-based organic semiconductor devices and microcrystals / Michael Eckardt." Mainz : Universitätsbibliothek Mainz, 2016. http://d-nb.info/1119827078/34.

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Flinn, Gregory Patrick. "Laser spectroscopy of semiconductor quantum wells : optical pumping and optically detected nuclear magnetic resonance." Thesis, University of Southampton, 1991. https://eprints.soton.ac.uk/399448/.

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This thesis describes the experimental results of optical pumping studies made in some Type 1 GaAs/Al0.3Ga0.7As single quantum wells (QWs), ranging in widths from 50 to 200A. Optical pumping uses circularly polarised light to photocreate spin orientated carriers in the QWs. The polarised carriers, principally the electrons, transfer angular momentum to the nuclear spins of the lattice through the Fermi contact hyperfine interaction. The orientated nuclei act back on the electrons through the same interaction. Studies of the nuclear and carrier spin systems may be effected by monitoring the cir

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Martins, João Francisco Trencher. "Influência de defeitos e da qualidade superficial no desempenho do cristal de iodeto de mercúrio aplicado como detector de radiação." Universidade de São Paulo, 2015. http://www.teses.usp.br/teses/disponiveis/85/85131/tde-21122015-150412/.

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Os compostos semicondutores com alto número atômico e energia de banda proibida larga vêm sendo pesquisados como detectores de radiação X e gama, com alta resolução energética, operando à temperatura ambiente. O denominador comum dos materiais semicondutores, que operam à temperatura ambiente, é a dificuldade em crescer cristais com pureza química elevada e boa estequiometria. O desenvolvimento deste tipo de detectores semicondutores de radiação é ainda um desafio tecnológico e tem deparado com muitos fatores limitantes, tais como: material de partida com qualidade compatível para o uso no cre

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McChesney, John-James Stuart Duncan. "Development of electronic materials for infra-red detector systems." Thesis, Sheffield Hallam University, 1999. http://shura.shu.ac.uk/20035/.

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Indium antimonide (InSb) and gallium antimonide (GaSb) are technologically important III-V semiconductor materials used in infrared detector systems. Yet, the application of these materials is to a certain extent limited, in that the techniques currently used for their growth are both expensive and problematic. Semiconductor electrochemical deposition, which has been successfully applied to the generation of II-VI semiconductor materials, may offer the prospect of overcoming such limitations. This work presents results that represent a significant contribution to the development of electrochem

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Oliveira, Icimone Braga de. "Desenvolvimento do cristal semicondutor de Brometo de Tálio para aplicações como detector de radiação e fotodetector." Universidade de São Paulo, 2006. http://www.teses.usp.br/teses/disponiveis/85/85131/tde-30032007-135609/.

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Neste trabalho, os cristais de TlBr foram crescidos pelo método de Bridgman, a partir de materiais purificados pela técnica de fusão zonal. A eficiência da purificação e avaliação da superfície cristalina em relação ao desempenho como detectores de radiação foi observada. Bons resultados foram obtidos com os aprimoramentos realizados nos processos de purificação, crescimento de cristais e na fabricação dos detectores. A resposta à radiação foi verificada excitando os detectores com fontes de raios gama: 241Am (59 keV), 133Ba (80 e 355 keV), 57Co (122 keV), 22Na (511 keV) e 137Cs (662 keV) à te

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ENNODE, DUFOUR NATHALIE. "Validation theorique et experimentale de detecteurs a semiconducteur, en vue de leur application dans le domaine de la diffraction de rayons x." Université Louis Pasteur (Strasbourg) (1971-2008), 1997. http://www.theses.fr/1997STR13027.

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Dans le domaine de l'etude des materiaux, la diffraction des rayons x permet de connaitre la composition des echantillons testes. Une etude de deux detecteurs a semiconducteur bases, l'un sur un reseau de photodiodes hamamatsu, et pour l'autre, sur une matrice de dispositifs a transfert de charges (ccd) thomson, a montre qu'ils possedent une excellente linearite, une bonne sensibilite et une plage dynamique etendue. Une electronique d'acquisition rapide a ete construite et nous avons developpe un logiciel d'acquisition et de traitement des donnees. Ces capteurs ont donc ete montes sur un banc

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Kandlakunta, Praneeth. "A Proof-of-Principle Investigation for a Neutron-Gamma Discrimination Technique in a Semiconductor Neutron Detector." The Ohio State University, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=osu1332447196.

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Jornet, i. Sala Núria. "Detectores de semiconductor: calibración y aplicaciones a la dosimetría in vivo en pacientes sometidos a tratamientos con radioterapia externa." Doctoral thesis, Universitat Autònoma de Barcelona, 2001. http://hdl.handle.net/10803/3353.

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El objetivo de este estudio es la calibración de diodos, para ser utilizados en dosimetria in vivo en haces de fotones de alta energía, en diversas situaciones, la mayoría de ellas no descritas en la literatura: En primer lugar se calibra un conjunto de diodos para determinar la dosis entrada y salida en la técnica específica de ICT (capítulo 3). Se hace especial hincapié en la calibración de los diodos detrás de protecciones a pulmón de transmisión parcial. En el capítulo 4 se desarrolla un algoritmo de cálculo para calcular las dosis a plano medio a partir de las dosis in vivo en ICT. Se

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Sakai, H., A. Uritani, C. Mori, and T. Iguchi. "Pulse Shape Recognition for CdZnTe Semiconductor Detector by using Multi-Shaping Amplifiers Method with Neural Network Algorithm." IEEE, 1998. http://hdl.handle.net/2237/7308.

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Sakai, H., A. Uritani, C. Mori, and T. Iguchi. "Pulse Shape Recognition for CdZnTe Semiconductor Detector by using Multi-Shaping Amplifiers Method with Neural Network Algorithm." IEEE, 1999. http://hdl.handle.net/2237/7277.

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Eyden, Alison C. "The application of a semiconductor detector in the estimation of the effective dose in radiographic examination of the extremities." Thesis, University of Kent, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.365250.

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Nguyen, Thuyen Huu Manh. "A photovoltaic detector technology based on plasma-induced p-to-n type conversion of long wavelength infrared HgCdTe." University of Western Australia. School of Electrical, Electronic and Computer Engineering, 2005. http://theses.library.uwa.edu.au/adt-WU2005.0098.

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[Truncated abstract] HgCdTe is the leading semiconductor material for the fabrication of high performance infrared photon detectors, in particular, for detection of radiation beyond the near infrared. State-of-the-art infrared detection and imaging systems are currently based around high density focal plane arrays consisting of HgCdTe photodiodes as detector elements. Despite the high performance of HgCdTe infrared detectors, and the many benefits they can offer to industry and society, their utilisation remains limited due to the high cost of production. The chemical composition and narrow b

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Jarrell, Joshua Taylor Jarrell. "Fabrication and Characterization of a Molten Salt Application Silicon Carbide Alpha Detector." The Ohio State University, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=osu1533219324268259.

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Hoghooghi, Nazanin. "Injection-locked semiconductor lasers for realization of novel RF photonics components." Doctoral diss., University of Central Florida, 2012. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/5303.

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This dissertation details the work has been done on a novel resonant cavity linear interferometric modulator and a direct phase detector with channel filtering capability using injection-locked semiconductor lasers for applications in RF photonics. First, examples of optical systems whose performance can be greatly enhanced by using a linear intensity modulator are presented and existing linearized modulator designs are reviewed. The novel linear interferometric optical intensity modulator based on an injection-locked laser as an arcsine phase modulator is introduced and followed by numerical

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MARGARET, MARY FELIX CECILIA. "Etude des detecteurs semiconducteurs pour l'analyse spectrale par la methode multienergie en vue des applications en imagerie x dans la plage energetique 20 - 150 kev." Paris 6, 1994. http://www.theses.fr/1994PA066404.

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La methode multienergie est une methode non destructive d'identification de composes chimiques par l'intermediaire de leur fonction d'attenuation des rayons x sur une bande spectrale comprise entre 20 et 150 kev. A cet effet, les mesures de transmission sont effectuees dans plusieurs bandes spectrales, elle-memes creees par deux procedes differents: soit a l'emission (multispectre), soit a la detection (multidetecteur). La methode multispectre requiert un monodetecteur et la methode multidetecteur un empilement de detecteurs de materiaux et d'epaisseurs differents. Les contraintes imposees par

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Dagnelund, Daniel. "Magneto-optical studies of dilute nitrides and II-VI diluted magnetic semiconductor quantum structures." Doctoral thesis, Linköpings universitet, Funktionella elektroniska material, 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-54695.

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This thesis work aims at a better understanding of magneto-optical properties of dilute nitrides and II-VI diluted magnetic semiconductor quantum structures. The thesis is divided into two parts. The first part gives an introduction of the research fields, together with a brief summary of the scientific results included in the thesis. The second part consists of seven scientific articles that present the main findings of the thesis work. Below is a short summary of the thesis. Dilute nitrides have been of great scientific interest since their development in the early 1990s, because of their un

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