Relevant bibliographies by topics / Die-bonding sintering

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers

Academic literature on the topic 'Die-bonding sintering'

Author: Grafiati
Published: 4 June 2021
Last updated: 8 February 2022

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the lists of relevant articles, books, theses, conference reports, and other scholarly sources on the topic 'Die-bonding sintering.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Journal articles on the topic "Die-bonding sintering"

1

Ishikawa, Dai, Hideo Nakako, Yuki Kawana, Chie Sugama, Motohiro Negishi, and Yoshinori Ejiri. "Bondability Evaluation of Pressureless Sintering Copper Die-Bonding Paste." Journal of The Japan Institute of Electronics Packaging 21, no. 3 (May 1, 2018): 224–33. http://dx.doi.org/10.5104/jiep.21.224.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Xiao, Kewei, Jesus N. Calata, Hanguang Zheng, Khai D. T. Ngo, and Guo-Quan Lu. "Large-area Nanosilver Die-attach by Hot-pressing Below 200°C and 5 MPa." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2012, HITEC (January 1, 2012): 000129–34. http://dx.doi.org/10.4071/hitec-2012-tp25.

Full text
Abstract:
Sintered nanoscale silver joint is an emerging lead-free die-attach solution for high-temperature packaging because of silver's high melting temperature. For bonding small chips, the nanosilver solution can be achieved with a simple heating profile under atmospheric pressure. However, for bonding large-area chips, e.g. > 1 cm2 IGBT chips, uniaxial pressure of a few MPa has been found necessary during the sintering stage of the bonding process, which is carried out at temperatures below 275°C. Hot-pressing at high temperatures can cause significant wear and tear on the processing equipment, resulting in high maintenance cost. In this study, we ran a series of experiments aimed at lowering the hot-pressing temperature. Specifically, we examined a process involving hot-press drying, followed by sintering without any applied pressure. A fractional factorial design of experiments was used to identify the importance and interaction of various processing parameters, such as hot-pressing pressure/temperature/time and sintering temperature/time, on the final bond quality of sintered nanosilver joints. Based on the results, a simpler process, consisting of hot-press drying at 180°C under 3 MPa, followed by sintering at 275°C under atmospheric pressure was found to produce attachments with die-shear strength in excess of 30 MPa.
APA, Harvard, Vancouver, ISO, and other styles
3

Buttay, Cyril, Amandine Masson, Jianfeng Li, Mark Johnson, Mihai Lazar, Christophe Raynaud, and Hervé Morel. "Die Attach of Power Devices Using Silver Sintering – Bonding Process Optimisation and Characterization." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, HITEN (January 1, 2011): 000084–90. http://dx.doi.org/10.4071/hiten-paper7-cbuttay.

Full text
Abstract:
Silver sintering is becoming an attractive alternative to soldering, especially for high temperature applications. Indeed, the increase in operating temperature requires new soldering alloys with even higher melting points. Silver sintering, on the contrary, is a solution which only require moderate (<300°C) process temperature. In this paper, we present the implementation of a die attach technique based on sintering of some silver paste, with a special focus on the practical considerations. A good quality bond can be achieved by paying attention to the assembly process.
APA, Harvard, Vancouver, ISO, and other styles
4

Zhang, Hongwen, and Ning-Cheng Lee. "Perspectives of High-Temperature Pb-Free Bonding Materials." International Symposium on Microelectronics 2018, no. 1 (October 1, 2018): 000088–98. http://dx.doi.org/10.4071/2380-4505-2018.1.000088.

Full text
Abstract:
Abstract High lead solders have been used as die-attach and interconnect materials in discrete power packages. Due to the demand of SiC devices serving the high-power market and the harmful effects of Pb to human health and the environment, alternative Pb-free solders, novel bonding materials, as well as solutions have been studied extensively in recent years. The exemption of using high-Pb solders has been extended again to 2021, although it could be terminated at any time if a new technology or material were to be accepted by the industry. This paper presents potential materials and technologies for high-temperature Pb-free die-attachment, focusing on alternative solders. Sintering materials and transient liquid phase bonding (TLPB) materials have been briefly covered as well. AuSn, AuSi, and AuGe solders have shown to be exceptionally high in cost, which limited their application. BiAg- and BiCu-based solders—the BiAgX® family including solder paste, solder wire, and solder preform—improved wetting and exhibited remelting temperatures of 262°C and 270°C, respectively. The acceptable reliability performance on temperature cycling and thermal aging, as well as low material cost, has made them the most competitive candidates for low-power discrete die-attach devices. SnSbAgCu, with well-designed compositions in recent studies, offers a remelting temperature above 320°C. SnSbAgCu is targeted in markets for mid-to-high power devices. Reliability testing for other recently designed SnSbAgCu pastes for various die-attach vehicles is being studied. ZnAl has a remelting temperature above 380°C and an extremely low material cost (comparable to or even lower than the high-lead solders). Although the bonding process is stringent, the excellent thermomechanical behavior and the superior thermal/electrical conductivity have allowed ZnAl to be a potential candidate for high-temperature/high-power die-attach that is competitive with AuSi and AuGe solders. Sintering materials form bonds through solid state interdiffusion, while TLPB materials create a joint through solid-liquid interdiffusion, in which the remelting temperature is enhanced by forming massive IMCs. The desired high thermal/electrical/mechanical/melting performances, as well as the relatively low processing temperature (<350°C), are shining the sintering materials (especially Ag-sintering materials). The intrinsic high porosity (>20%) and the evolution of pores from pressureless sintering may overshadow the reliability. In addition, the immaturity of the processing (time/temperature/pressure/atmosphere/equipment availability, etc.) may deter the industrial adoption of sintering materials. So far, none of these materials or technologies is ideal to satisfy all the requirements of the variety of high-temperature, Pb-free die-attach applications in terms of processing, reliability, and cost. However, each material and solution has the potential to be a niche within this broader categorization.
APA, Harvard, Vancouver, ISO, and other styles
5

Jin, Howard (Hwail), Kewei Xu, Loreto Naungayan, and Jose Quinones. "High Thermal Conductive Die Attach Paste Using Polymer and Micron Size Silver for Power Semiconductor Package." International Symposium on Microelectronics 2016, no. 1 (October 1, 2016): 000326–31. http://dx.doi.org/10.4071/isom-2016-wp41.

Full text
Abstract:
Abstract Power semiconductor package manufactures and electronic device suppliers have been looking for Pb-free alternative to traditional high Pb solder die attach adhesives. Lead solders have high thermal conductivity, 30–50W/mK, and known process with some difficulties in high volume mass production such as void, bond line control, and requiring reducing atmosphere such as forming gas. Lead is now categorized as hazardous substance to human body and environment and its products are scheduled to be banned within a few years. Standard silver epoxy pastes and Electrically Conductive Adhesives (ECSs) are other forms of die attach adhesives but the thermal conductivity is not adequate for Power devices. Eutectic gold-tin solder (80Au20Sn) has 57W/mK but it is high cost material. Currently Silver sintering material has become popular for electronic device because it has high thermal conductivity (150~250W/mK) by using nano silver sintering. But it requires high bonding temperature and pressure. It makes brittle bonding structure and has limitation in die size due to high stress. New silver sintering material in this paper is composed of micron size silver and organic polymer. This technology overcomes all the limitations of conventional silver epoxy, eutectic gold thin solder and silver sintering product by using the unique design of polymer composition. This new silver sintering technology using polymer and micron size silver is a cost effective solution to replace Pb solder for power device and the thermal performance is almost same as nano silver sintering products. The application process is the same as standard silver epoxy and does not require new equipment. It is a cost effective drop in solution.
APA, Harvard, Vancouver, ISO, and other styles
6

Kang, Hyejun, Ashutosh Sharma, and Jae Pil Jung. "Recent Progress in Transient Liquid Phase and Wire Bonding Technologies for Power Electronics." Metals 10, no. 7 (July 11, 2020): 934. http://dx.doi.org/10.3390/met10070934.

Full text
Abstract:
Transient liquid phase (TLP) bonding is a novel bonding process for the joining of metallic and ceramic materials using an interlayer. TLP bonding is particularly crucial for the joining of the semiconductor chips with expensive die-attached materials during low-temperature sintering. Moreover, the transient TLP bonding occurs at a lower temperature, is cost-effective, and causes less joint porosity. Wire bonding is also a common process to interconnect between the power module package to direct bonded copper (DBC). In this context, we propose to review the challenges and advances in TLP and ultrasonic wire bonding technology using Sn-based solders for power electronics packaging.
APA, Harvard, Vancouver, ISO, and other styles
7

Bhogaraju, Sri Krishna, Omid Mokhtari, Jacopo Pascucci, Fosca Conti, and Gordon Elger. "Improved sinterability of particles to substrates by surface modifications on substrate metallization." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2019, HiTen (July 1, 2019): 000066–70. http://dx.doi.org/10.4071/2380-4491.2019.hiten.000066.

Full text
Abstract:
Abstract Sintering under pressure has been in the forefront of the research and development over the past decade as an alternative to high temperature soldering and die-attach bonding for high temperature electronics. However, high bonding pressure is a deterrent to mass industrialization due to the high costs involved in the design of special tooling and complex process control parameters. Further, it can cause device cracking, especially while working with sensitive high power optoelectronics devices (e.g. high power light emitting diodes). Therefore, alternatives to enhance sinterability are highly requested. Substrate metallization is observed to play an important role while sintering. An innovative low cost method to have nanostructured surface modifications on the substrates is realized and presented here. The method is applied to enhance sinterability of Cu particles to substrate. Shear tests on samples with surface modified substrates are promising with results of ca. 25 MPa, which is 24% better than sintering on unmodified bare Cu substrate. Sintering was enabled by in-house developed hybrid Cu paste under pressureless sintering conditions of 300°C, for 60 min, and under N2 atmosphere.
APA, Harvard, Vancouver, ISO, and other styles
8

Fuentes-Pacheco, L., and M. Campos. "Bonding evolution with sintering temperature in low alloyed steels with chromium." Science of Sintering 41, no. 2 (2009): 161–73. http://dx.doi.org/10.2298/sos0902161f.

Full text
Abstract:
At present, high performance PM steels for automotive applications follow a processing route that comprises die compaction of water-atomized powder, followed by sintering and secondary treatments, and finishing operations. This study examines Cr-alloyed sintered steels with two level of alloying. In chromium-alloyed steels, the surface oxide on the powder is of critical importance for developing the bonding between the particles during sintering. Reduction of this oxide depends mainly on three factors: temperature, dew point of the atmosphere, and carbothermic reduction provided by the added graphite. The transformation of the initial surface oxide evolves sequence as temperature increases during sintering, depending on the oxide composition. Carbothermic reduction is supposed to be the controlling mechanism, even when sintering in hydrogen-containing atmospheres. The effect of carbothermic reduction can be monitored by investigating the behavior of the specimens under tensile testing, and studying the resultant fracture surfaces.
APA, Harvard, Vancouver, ISO, and other styles
9

Gao, Yue, Hao Zhang, Wanli Li, Jinting Jiu, Shijo Nagao, Tohru Sugahara, and Katsuaki Suganuma. "Die Bonding Performance Using Bimodal Cu Particle Paste Under Different Sintering Atmospheres." Journal of Electronic Materials 46, no. 7 (March 27, 2017): 4575–81. http://dx.doi.org/10.1007/s11664-017-5464-2.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Shen, Zhenzhen, Aleksey Reiderman, and Casey Anude. "Pressure-less AgNP Sintering for High-power MCM Assembly for Extreme Environment Applications." International Symposium on Microelectronics 2015, no. 1 (October 1, 2015): 000342–48. http://dx.doi.org/10.4071/isom-2015-wp14.

Full text
Abstract:
Silver nano-particle (AgNP) sintering has been a promising bonding material for high-temperature applications. There is an increasing demand for designs implemented as multi-chip module (MCM) in the high-temperature markets, like the oil and gas industry, primarily because of MCM's smaller size, higher-performance capability, and higher overall reliability when compared to traditional high Tg printed circuit boards. In this work, pressure-less AgNP sintering paste was used in the assembly of multi-chip modules. The assemblies included die-mounted on aluminum nitride and alumina substrates that were metallized with various thin and thick films. Sintered silver nano-particle attachments were also attempted for surface-mounted technology (SMT) chip components. Different assembly parameters such as bonding line thickness and sintering profiles were evaluated to discover the optimal assembly process window that would yield acceptable reliability for 250°C and higher ambient temperature applications. The assemblies were subjected to various tests including thermal cycling, high-ramp rate thermal shocks, and high-temperature storage tests. Shear strength measurements and analysis of the cross sections and fracture surfaces were performed to understand failure mechanisms. One of the findings was a certain and unique failure mode associated with bonding of thin-film gold metallized surfaces using pressure-less silver nano-particles sintering. That failure mode begins after a short exposure to temperatures of 200°C and higher. However, silver nano-particle sintering on substrates metallized with thin-film silver and some thick-film formulations yields dramatically better results.
APA, Harvard, Vancouver, ISO, and other styles
More sources

Dissertations / Theses on the topic "Die-bonding sintering"

1

Canaud, Pauline. "Le frittage des poudres submicroniques du composé Ag3Sn, une alternative au brasage par fusion : synthèse de la phase en milieu polyol et premiers essais." Thesis, Université Paris-Saclay (ComUE), 2017. http://www.theses.fr/2017SACLV033.

Full text
Abstract:
L’étude de ce mémoire concerne l’élaboration d'un alliage alternatif sans plomb pour l’électronique de puissance, celui-ci sera utilisé à des fins de brasures. Les brasures actuelles sont composées d’alliages comportant du plombet sont peu résistantes en cas de travail à haute température. Ces systèmes seront progressivement éliminés, ils ne respectent plus la Directive Européenne sur l’environnement (RoHS) et les normes de santé publique en raison de la toxicité du plomb (cancérogène, mutagène, accumulation dans l’environnement …). Le travail a été réalisé avec l’alliage Ag-Sn, l’objectif principal de cette thèse a été d’élaborer le composé Ag3Sn, en raison de sa grande résistance thermique (température de fusion élevée de 480°C). Ses meilleures performances sont avantageuses pour les brasures situées dans des environnements difficiles comme l’aéronautique ou l’automobile. La première partie de ce manuscrit détaille la synthèse du composé Ag3Sn réalisée via la méthode polyol, une voie de chimie douce. Il s’agit d’une technique différente des techniques classiques, comme la voie métallurgique. La synthèse a été réalisée en plusieurs étapes et une méthode d’approches successives a été utilisée afin de déterminer les paramètres de synthèse optimums.Deux protocoles particuliers se détachent et ils permettent d’élaborer des phases résistantes à haute température. Lepremier permet d’élaborer une phase pure d' Ag3Sn, tandis que le second permet d’élaborer deux phases de solutionssolides. Les composés ont été caractérisés par DRX, par imagerie MEB-FEG et MET et par analyse thermogravimétrique.La seconde partie de ce travail est la consolidation de ce composé Ag3Sn par une technique de frittage particulière :le die-bonding, afin de réaliser la connexion entre la puce électronique et un susbtrat de cuivre recouvert d'argent.Une étape de dépôt des poudres sur le substrat a été nécessaire avant de réaliser la consolidation, elle a été réalisée selon différentes techniques : le spin-coating ou le dépôt par sérigraphie. Puis, les paramètres de frittage par die-bonding ont été affinés selon les techniques de dépôt. Enfin, des essais de cisaillement ont été réalisés sur certains échantillons
The study of this memoir concerns the development of an alternative lead-free alloy for power electronics, which will be used for solders. Nowadays, current solders are composed of alloys containing lead, and aren't resistant at high work temperature. These systems will be phased out, because they no longer comply with the European RoHS Directive and public health standards due to the toxicity of lead (carcinogenic, mutagenic, accumulation in the environment, etc.). This work was carried out with the Ag-Sn alloy, and the main objective was to develop the elaboration of the Ag3Sn compound, due to its high thermal resistance (high melting point of 480°C). Its best performance is an advantage for solders located in difficult work environments such as aeronautics or automobile. First part of this thesis describes the synthesis of Ag3Sn compound with the polyol process, a soft-chemistry routine. It is different from the conventional techniques, like the metallurgical way. Polyol synthesis was realized by following several steps. A method of successive approaches wasdetermine optimum synthesis parameters. Two specific protocols stand out, and they allow the development of high-temperature resistant phases. The first one allows the elaboration of an Ag3Sn pure phase, an the second one allows the development of two compounds of solid solutions. The compounds were characterized by XRD, FEG-SEM, TEM and thermogravimetric analysis. The second part of this work is the consolidation of the Ag3Sn compound with a special sintering technique : the die-bonding, in order to realize the connexion between the electronic chip and the copper substrate coated silver. A first step of depositing powder on the substrate was necessary before carrying out the implementation. It was carried out with various techniques : spin-coating orthe serigraphy deposition. Then, sintering parameters were refined according to the deposition techniques. Finally, shear tests were performed on different samples
APA, Harvard, Vancouver, ISO, and other styles

Book chapters on the topic "Die-bonding sintering"

1

Zhang, Zheng, Chuangtong Chen, Dongjin Kim, Aiji Suetake, Shijo Nagao, and Katsuaki Suganuma. "Bonding and High-Temperature Storage Performance of Die Attachment with Ag Paste Sintering on Bare Direct Bonding Aluminum (DBA) Substrate." In TMS 2020 149th Annual Meeting & Exhibition Supplemental Proceedings, 697–706. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-36296-6_65.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Chen, S., and H. Zhang. "Silver Sintering and Soldering: Bonding Process and Comparison." In Die-Attach Materials for High Temperature Applications in Microelectronics Packaging, 1–33. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-99256-3_1.

Full text
APA, Harvard, Vancouver, ISO, and other styles

Conference papers on the topic "Die-bonding sintering"

1

Ishikawa, Dai, Hideo Nakako, Yuki Kawana, Chie Sugama, Motohiro Negishi, Yoshinori Ejiri, Suguru Ueda, et al. "Copper Die-Bonding Sinter Paste: Sintering and Bonding Properties." In 2018 7th Electronic System-Integration Technology Conference (ESTC). IEEE, 2018. http://dx.doi.org/10.1109/estc.2018.8546455.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Fujino, M., H. Narusawa, Y. Kuramochi, E. Higurashi, T. Suga, T. Shiratori, and M. Mizukoshi. "Transient Liquid-Phase Sintering using Tin and Silver Powder Mixture for Die Bonding." In 2015 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2015. http://dx.doi.org/10.7567/ssdm.2015.ps-2-7.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Liu, Zhihui, Yaozhong Sun, Zhuo Chen, Junhui Li, and Wenhui Zhu. "Sintering Of Hybrid Nano Sliver Paste Achieve Cone-Structured Cu Bonding in die attachment." In 2018 19th International Conference on Electronic Packaging Technology (ICEPT). IEEE, 2018. http://dx.doi.org/10.1109/icept.2018.8480425.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Takemasa, Tetsu, Minoru Ueshima, Jinting Jiu, and Katsuaki Suganuma. "Die-bonding performance and mechanism based on the sintering of micro Ag paste for high power devices." In 2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO). IEEE, 2016. http://dx.doi.org/10.1109/nano.2016.7751487.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Fan, Guangyu, Christine Labarbera, Ning-Cheng Lee, Zachary Boushie, and Nicole Lockwood. "Pressureless Sintering Process of Ag Sinter Paste Bonding Ag Si Die on Bare Cu DBC Using Convection Reflow Oven in Nitrogen for Die Attach." In 2020 IEEE 70th Electronic Components and Technology Conference (ECTC). IEEE, 2020. http://dx.doi.org/10.1109/ectc32862.2020.00212.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Bai, John G., Zach Z. Zhang, Jesus N. Calata, and Guo-Quan Lu. "Low-Temperature Sintering of Nanoscale Silver Pastes for High-Performance and Highly-Reliable Device Interconnection." In ASME 2005 International Mechanical Engineering Congress and Exposition. ASMEDC, 2005. http://dx.doi.org/10.1115/imece2005-79187.

Full text
Abstract:
In this paper, we report our development on making of nanoscale silver pastes and their low-temperature sintering for semiconductor device interconnections. The nanoscale silver pastes were prepared by dispersing 30-nm silver powder under ultrasonic vibration and mechanical agitation in an organic vehicle. Sintering of the silver paste prints at 280°C for 10 minutes resulted in a density of ~80% in the air ambient. Some important properties of the low-temperature sintered silver include ~2.4 W/K-cm for thermal conductivity, ~3.8 × 10−6 Ω-cm for electrical resistivity, and ~9 GPa for the effective elastic modulus. SiC Schottky rectifiers attached to either silver- or gold-coated direct bond copper (DBC) substrates show low forward voltage drops. The silver joints do not contain large voids but rather uniformly distributed microscale pores. Die-shear tests showed that bonding strengths of the silver joints were around 21 MPa on the gold-coated DBC substrates and 38 MPa on the silver-coated DBC substrates, respectively. The latter is comparable to that of reflowed eutectic lead-tin solder joints. Based on the findings in this work, the low-temperature sintering of nanoscale silver pastes is promising to be a high performance and highly-reliable semiconductor device bonding solution for high power packages.
APA, Harvard, Vancouver, ISO, and other styles
7

Huang, Hai-Jun, Xue Wu, Min-Bo Zhou, and Xin-Ping Zhang. "A highly reliable die bonding approach for high power devices by low temperature pressureless sintering using a novel Cu nanoparticle paste." In 2020 IEEE 70th Electronic Components and Technology Conference (ECTC). IEEE, 2020. http://dx.doi.org/10.1109/ectc32862.2020.00266.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Huang, Hai-Jun, Min-Bo Zhou, and Xin-Ping Zhang. "Extraordinarily enhanced sintering performance of pressureless sinterable Cu nanoparticle paste for achieving robust die-attach bonding by using reducing hybrid solvent." In 2021 IEEE 71st Electronic Components and Technology Conference (ECTC). IEEE, 2021. http://dx.doi.org/10.1109/ectc32696.2021.00104.

Full text
APA, Harvard, Vancouver, ISO, and other styles
You might also be interested in the extended bibliographies on the topic 'Die-bonding sintering' for particular source types:
Journal articles
We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!

To the bibliography