Journal articles: 'Dielectric Applications'

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Biju, Anjitha, Maria Joseph, V. N. Archana, Navya Joseph, and M. R. Anantharaman. "High Dielectric Constant Liquid Dielectrics Based on Magnetic Nanofluids." Journal of Nanofluids 12, no. 4 (May 1, 2023): 1141–50. http://dx.doi.org/10.1166/jon.2023.1973.

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Magnetic nanofluids are increasingly finding new applications. They can be employed as liquid dielectrics. The advantage of having a liquid dielectric is that high dielectric constant can be achieved by a judicious choice of the base liquid. The dielectric constant can be tuned with the help of an external magnetic field too. Superparamagnetic iron oxide nanoparticles were dispersed in polar carriers, namely water, polyvinyl alcohol, ethylene glycol, and a nonpolar carrier like kerosene to obtain stable magnetic fluids after ensuring the crystallographic phase purity along with appropriate magnetic characteristics of the dispersant. The fluids were then subjected to dielectric studies using an automated homemade dielectric setup. The dielectric permittivity and dielectric loss at different frequencies with and without an external magnetic field were evaluated. The studies indicate that magnetic nanofluids based on polar carriers are excellent liquid dielectrics over a wide range of frequencies with the incorporation of iron oxide nanoparticles. The application of an external magnetic field enhances the dielectric constant considerably. These magnetic nanofluids can be employed as liquid dielectrics for applications. It has been found that kerosene based magneto fluids have a low dielectric constant while Polyvinyl alcohol based fluids exhibit the highest dielectric constant.

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Buchberger, Christian, Florian Pfeiffer, and Erwin Biebl. "Dielectric corner reflectors for mmWave applications." Advances in Radio Science 17 (September 19, 2019): 197–203. http://dx.doi.org/10.5194/ars-17-197-2019.

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Abstract. Using dielectrics instead of conventional metallic structures, this article investigates the properties of the proposed dielectric corner reflectors for use in a number of millimeter wave (mmWave) applications. Material characterizations of different typical plastics using transmission measurements are presented, as well as an analysis of their respective radar cross section (RCS) when used as corner reflectors. They exhibit similar behavior as conventional metallic ones, while intrinsic dielectric losses reduce the overall RCS. Additionally, two use cases are presented. One shows the potential capabilities by combining a dielectric with a metallic corner reflector to increase its opening angle. The other gives rise to the possibility of using several single dielectric reflectors in array configurations to further increase the overall RCS, while introducing grating lobes.

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Silva Neto, L. P., J. O. Rossi, and A. R. Silva. "Applications of PZT Dielectric Ceramics in High-Energy Storage Systems." Materials Science Forum 727-728 (August 2012): 505–10. http://dx.doi.org/10.4028/www.scientific.net/msf.727-728.505.

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The barium and strontium titanate (BST) ceramics have been used with great success as excellent dielectrics in the construction of high voltage (HV) commercial ceramic capacitors with reduced dimensions because of their high dielectric constant. However, the main point of this paper is to investigate other type of ceramic known as PZT (Lead Zirconate Titanate) normally used as piezoelectric sensors in industrial applications. The idea herein is to use the PZT ceramics as HV dielectrics for applications in high-energy storage systems by de-poling their piezoelectric properties in order to avoid dielectric damage and losses at high frequencies. For this, de-poled PZT-4 ceramic samples (30 mm × 2 mm) were submitted to HV tests, in which their dielectric breakdown strength and dielectric constant variation with the applied voltage were assessed. These results obtained confirmed the use of PZT in applications that require reasonable dielectric constant stability (< 15 %) with voltage and HV dielectric breakdown (40 kV/cm) for compact high-energy storage devices.

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Yang, Zhijie, Dong Yue, Yuanhang Yao, Jialong Li, Qingguo Chi, Qingguo Chen, Daomin Min, and Yu Feng. "Energy Storage Application of All-Organic Polymer Dielectrics: A Review." Polymers 14, no. 6 (March 14, 2022): 1160. http://dx.doi.org/10.3390/polym14061160.

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With the wide application of energy storage equipment in modern electronic and electrical systems, developing polymer-based dielectric capacitors with high-power density and rapid charge and discharge capabilities has become important. However, there are significant challenges in synergistic optimization of conventional polymer-based composites, specifically in terms of their breakdown and dielectric properties. As the basis of dielectrics, all-organic polymers have become a research hotspot in recent years, showing broad development prospects in the fields of dielectric and energy storage. This paper reviews the research progress of all-organic polymer dielectrics from the perspective of material preparation methods, with emphasis on strategies that enhance both dielectric and energy storage performance. By dividing all-organic polymer dielectrics into linear polymer dielectrics and nonlinear polymer dielectrics, the paper describes the effects of three structures (blending, filling, and multilayer) on the dielectric and energy storage properties of all-organic polymer dielectrics. Based on the above research progress, the energy storage applications of all-organic dielectrics are summarized and their prospects discussed.

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Gurav, Abhijit, Xilin Xu, Jim Magee, Paul Staubli, John Bultitude, and Travis Ashburn. "Advanced Ceramic Capacitor Solutions for High Temperature Applications." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2013, HITEN (January 1, 2013): 000025–32. http://dx.doi.org/10.4071/hiten-ma14.

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For high temperature applications at 150°C or above, such as those in electronics for down-hole drilling, geothermal energy generation and power electronics, a robust dielectric material is necessary for capacitors. Ceramic capacitors using X7R and X8R type dielectrics are designed for applications up to 125°C and 150°C, respectively. At temperatures above 150°C, these X7R/X8R types of ceramic capacitors typically suffer from degradation of reliability performance and severe reduction in capacitance, especially when bias is applied. Recently, a Class-I dielectric material has been developed using Nickel electrodes for high temperature application up to 200–250°C. Due to its linear dielectric nature, this material exhibits highly stable capacitance as a function of temperature and voltage. This paper will report electrical properties and reliability test data on these Class-I type ceramic capacitors in SMD chip and leaded configurations at 150–200°C and above, and discuss possible mechanisms behind the robust reliability of this high temperature dielectric.

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Anju Balaraman, Anina, and Soma Dutta. "Inorganic dielectric materials for energy storage applications: a review." Journal of Physics D: Applied Physics 55, no. 18 (January 19, 2022): 183002. http://dx.doi.org/10.1088/1361-6463/ac46ed.

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Abstract The intricacies in identifying the appropriate material system for energy storage applications have been the biggest struggle of the scientific community. Countless contributions by researchers worldwide have now helped us identify the possible snags and limitations associated with each material/method. This review intends to briefly discuss state of the art in energy storage applications of dielectric materials such as linear dielectrics, ferroelectrics, anti-ferroelectrics, and relaxor ferroelectrics. Based on the recent studies, we find that the eco-friendly lead-free dielectrics, which have been marked as inadequate to compete with lead-based systems, are excellent for energy applications. Moreover, some promising strategies to improve the functional properties of dielectric materials are discussed.

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You, Yong, Chenhao Zhan, Ling Tu, Yajie Wang, Weibin Hu, Renbo Wei, and Xiaobo Liu. "Polyarylene Ether Nitrile-Based High-k Composites for Dielectric Applications." International Journal of Polymer Science 2018 (July 10, 2018): 1–15. http://dx.doi.org/10.1155/2018/5161908.

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Flexible polymer-based composites exhibiting high dielectric constant as well as low dielectric loss have been intensively investigated for their potential utilization in electronics and electricity industry and energy storage. Resulting from the polar -CN on the side chain, polyarylene ether nitrile (PEN) shows relatively high dielectric constant which has been extensively investigated as one of the hot spots as dielectric materials. However, the dielectric constant of PEN is still much lower than the ceramic dielectrics such as BaTiO3, TiO2, and Al2O3. In this review, recent and in-progress advancements in the designing and preparing strategies to obtain high-k PEN-based nanocomposites are summarized. According to the types of the added fillers, the effects of organic fillers, dielectric ceramic fillers, and conductive fillers on electric properties of PEN-based composites are investigated. In addition, other factors including the structures and sizes of the additive, the compatibility between the additive agent and the PEN, and the interface which affects the dielectric properties of the obtained composite materials are investigated. Finally, challenges facing in the design of more effective strategies for the high-k PEN-based dielectric materials are discussed.

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Agbabiaka, Okikiola Ganiu, Miracle Hope Adegun, Kit-Ying Chan, Heng Zhang, Xi Shen, and Jang-Kyo Kim. "BN-PVDF/rGO-PVDF Laminate Nanocomposites for Energy Storage Applications." Nanomaterials 12, no. 24 (December 19, 2022): 4492. http://dx.doi.org/10.3390/nano12244492.

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The increasing demand for high energy storage devices calls for concurrently enhanced dielectric constants and reduced dielectric losses of polymer dielectrics. In this work, we rationally design dielectric composites comprising aligned 2D nanofillers of reduced graphene oxide (rGO) and boron nitride nanosheets (BNNS) in a polyvinylidene fluoride (PVDF) matrix through a novel press-and-fold technique. Both nanofillers play different yet complementary roles: while rGO is designed to enhance the dielectric constant through charge accumulation at the interfaces with polymer, BNNS suppress the dielectric loss by preventing the mobility of free electrons. The microlaminate containing eight layers each of rGO/PVDF and BNNS/PVDF films exhibits remarkable dielectric performance with a dielectric constant of 147 and an ultralow dielectric loss of 0.075, due to the synergistic effect arising from the alternatingly electrically conductive and insulating films. Consequently, a maximum energy density of 3.5 J/cm3—about 18 times the bilayer composite counterpart—is realized. The high thermal conductivities of both nanofillers and their alignment endow the microlaminate with an excellent in-plane thermal conductivity of 6.53 Wm−1K−1, potentially useful for multifunctional applications. This work offers a simple but effective approach to fabricating a composite for high dielectric energy storage using two different 2D nanofillers.

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Barman, Jitesh, Wan Shao, Biao Tang, Dong Yuan, Jan Groenewold, and Guofu Zhou. "Wettability Manipulation by Interface-Localized Liquid Dielectrophoresis: Fundamentals and Applications." Micromachines 10, no. 5 (May 16, 2019): 329. http://dx.doi.org/10.3390/mi10050329.

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Electric field-based smart wetting manipulation is one of the extensively used techniques in modern surface science and engineering, especially in microfluidics and optofluidics applications. Liquid dielectrophoresis (LDEP) is a technique involving the manipulation of dielectric liquid motion via the polarization effect using a non-homogeneous electric field. The LDEP technique was mainly dedicated to the actuation of dielectric and aqueous liquids in microfluidics systems. Recently, a new concept called dielectrowetting was demonstrated by which the wettability of a dielectric liquid droplet can be reversibly manipulated via a highly localized LDEP force at the three-phase contact line of the droplet. Although dielectrowetting is principally very different from electrowetting on dielectrics (EWOD), it has the capability to spread a dielectric droplet into a thin liquid film with the application of sufficiently high voltage, overcoming the contact-angle saturation encountered in EWOD. The strength of dielectrowetting depends on the ratio of the penetration depth of the electric field inside the dielectric liquid and the difference between the dielectric constants of the liquid and its ambient medium. Since the introduction of the dielectrowetting technique, significant progress in the field encompassing various real-life applications was demonstrated in recent decades. In this paper, we review and discuss the governing forces and basic principles of LDEP, the mechanism of interface localization of LDEP for dielectrowetting, related phenomenon, and their recent applications, with an outlook on the future research.

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Naik, Tejas R., Veena R. Naik, and Nisha P. Sarwade. "Novel Materials as Interlayer Low-K Dielectrics for CMOS Interconnect Applications." Applied Mechanics and Materials 110-116 (October 2011): 5380–83. http://dx.doi.org/10.4028/www.scientific.net/amm.110-116.5380.

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Scaling down the integrated circuits has resulted in the arousal of number of problems like interaction between interconnect, crosstalk, time delay etc. These problems can be overcome by new designs and by use of corresponding novel materials, which may be a solution to these problems. In the present paper we try to put forward very recent development in the use of novel materials as interlayer dielectrics (ILDs) having low dielectric constant (k) for CMOS interconnects. The materials presented here are porous and hybrid organo-inorganic new generation interlayer dielectric materials possessing low dielectric constant and better processing properties.

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Zaid, Hasnah Mohd, Muhammad Adil, and Lee Kean Chuan. "The Effect of Calcination Temperature on Dielectric Properties of ZnO and Al₂O₃ Nanoparticles at Radio Frequencies." Key Engineering Materials 708 (September 2016): 9–13. http://dx.doi.org/10.4028/www.scientific.net/kem.708.9.

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The dielectric properties of ZnO and Al2O3 are dependent upon various factors such as chemical composition, method of synthesis, grain size, particle size distribution and porosity. A low dielectric constant is often desirable for several applications, whilst for enhanced oil recovery application, high loss dielectrics is required rendering the particles as surface-active agent. In this study, the dependence of the dielectric properties on the calcination temperature of ZnO and Al2O3 nanoparticles is determined as a function of two applied radio frequencies of 18.82 MHz and 167.32 MHz. The experimental results indicate that the nanoparticles of different phases can significantly improve the densification and their dielectric properties. Detailed analysis of the results showed that rotational polarization is the major contributor to the enhanced dielectric behavior of the nanoparticles at the applied frequencies.

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Li, Qi, Feihua Liu, Tiannan Yang, Matthew R. Gadinski, Guangzu Zhang, Long-Qing Chen, and Qing Wang. "Sandwich-structured polymer nanocomposites with high energy density and great charge–discharge efficiency at elevated temperatures." Proceedings of the National Academy of Sciences 113, no. 36 (August 22, 2016): 9995–10000. http://dx.doi.org/10.1073/pnas.1603792113.

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The demand for a new generation of high-temperature dielectric materials toward capacitive energy storage has been driven by the rise of high-power applications such as electric vehicles, aircraft, and pulsed power systems where the power electronics are exposed to elevated temperatures. Polymer dielectrics are characterized by being lightweight, and their scalability, mechanical flexibility, high dielectric strength, and great reliability, but they are limited to relatively low operating temperatures. The existing polymer nanocomposite-based dielectrics with a limited energy density at high temperatures also present a major barrier to achieving significant reductions in size and weight of energy devices. Here we report the sandwich structures as an efficient route to high-temperature dielectric polymer nanocomposites that simultaneously possess high dielectric constant and low dielectric loss. In contrast to the conventional single-layer configuration, the rationally designed sandwich-structured polymer nanocomposites are capable of integrating the complementary properties of spatially organized multicomponents in a synergistic fashion to raise dielectric constant, and subsequently greatly improve discharged energy densities while retaining low loss and high charge–discharge efficiency at elevated temperatures. At 150 °C and 200 MV m−1, an operating condition toward electric vehicle applications, the sandwich-structured polymer nanocomposites outperform the state-of-the-art polymer-based dielectrics in terms of energy density, power density, charge–discharge efficiency, and cyclability. The excellent dielectric and capacitive properties of the polymer nanocomposites may pave a way for widespread applications in modern electronics and power modules where harsh operating conditions are present.

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Ghule, B., and M. Laad. "Polymer Composites with Improved Dielectric Properties: A Review." Ukrainian Journal of Physics 66, no. 2 (March 4, 2021): 166. http://dx.doi.org/10.15407/ujpe66.2.166.

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Materials exhibiting high dielectric constant (k) values find applications in capacitors, gate dielectrics, dielectric elastomers, energy storage device, while materials with low dielectric constant are required in electronic packaging and other such applications. Traditionally, high k value materials are associated with high dielectric losses, frequency-dependent dielectric behavior, and high loading of a filler. Materials with low k possess a low thermal conductivity. This creates the new challenges in the development of dielectric materials in both kinds of applications. Use of high dielectric constant filler materials increases the dielectric constant. In this study,the factors affecting the dielectric constant and the dielectric strength of polymer composites are explored. The present work aims to study the effect of various parameters affecting the dielectric properties of the materials. The factors selected in this study are the type of a polymer, type of a filler material used, size, shape, loading level and surface modification of a filler material, and method of preparation of the polymer composites. The study is focused on the dielectric enhancement of polymer nanocomposites used in the field of energy storage devices. The results show that the core-shell structured approach for high dielectric constant materials incorporated in a polymer matrix improves the dielectric constant of the polymer composite.

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Meena, Jagan Singh, Min-Ching Chu, Ranjodh Singh, Chung-Shu Wu, Umesh Chand, Hsin-Chiang You, Po-Tsun Liu, Han-Ping D. Shieh, and Fu-Hsiang Ko. "Polystyrene-block-poly(methylmethacrylate) composite material film as a gate dielectric for plastic thin-film transistor applications." RSC Adv. 4, no. 36 (2014): 18493–502. http://dx.doi.org/10.1039/c4ra01517g.

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Low-temperature process PS-b-PMMA composite film as gate dielectric deposited over plastic substrate, which exhibits high surface energy, high air stability, very low leakage current and better dielectric constant compared to their conventional polymer dielectrics for use in ZnO–TFT applications.

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Gunawan, Vincensius. "Numerical study of vegetable oil as dielectric in the generation of surface plasmon polaritons in metal: The case of double interfaces." International Journal of Scientific Research and Management 10, no. 06 (June 24, 2022): 16–19. http://dx.doi.org/10.18535/ijsrm/v10i6.p01.

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Modified electromagnetic waves which is resulted from coupling of surface plasmon and initial electromagnetic waves are called surface plasmon polaritons (SPP). These type of polaritons are generated at the interface between metal and dielectric. Many studies are performed since SPP have potential application in many fields. The process of generating SPP was usually using dielectrics in the form of solid. However, the usage of liquid dielectric in generating SPP is very rare. In this study, we predict numerically the usage of liquid dielectrics by solving the dispersion relation of the SPP. The dispersion relation was derived using Maxwell equations and the continuity of the fields at the interfaces. The metal was immersed in the liquid dielectrics. We used parameters of castor oil as liquid dielectric in the numerical calculation. We found that the dispersion relation had two branches. One branch represented in phase condition while the other branch illustrated out of phase condition. This result agree with the previous research using solid dielectric.

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Liu, Di-Fan, Qi-Kun Feng, Yong-Xin Zhang, Shao-Long Zhong, and Zhi-Min Dang. "Prediction of high-temperature polymer dielectrics using a Bayesian molecular design model." Journal of Applied Physics 132, no. 1 (July 7, 2022): 014901. http://dx.doi.org/10.1063/5.0094746.

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Machine learning has shown its great potential in the accelerated discovery of advanced materials in the field of computational molecular design. High-temperature polymer dielectrics are urgently required with the emerging applications of energy-storage dielectric film capacitors under high-temperature conditions. Here, we demonstrate the successful prediction of polymers with a high dielectric constant ( ɛ) and high glass transition temperature ( Tg) using a Bayesian molecular design model. The model is trained on a joint data set containing 382 computed ɛ values using density functional perturbation theory and experimentally measured Tg values of ∼7000 polymers to build relative quantitative structure–property relationships and identify the promising polymers with specific desired range of dielectric constant and glass transition temperature. From the hypothetical polymer candidates, ten promising polymers are proposed based on their predicted properties and synthetic accessibility score for high-temperature dielectric film capacitors’ application. Moreover, 250k novel polymer structures are generated with the model to support future polymer informatics research. This work contributes to the successful prediction of high-temperature polymer dielectrics using machine learning models.

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Chaouchi, A., M. Saidi, S. d’Astorg, and S. Marinel. "CaZn1/3Nb2/3O3-based dielectric ceramics for silver co-sintering applications." Science of Sintering 44, no. 3 (2012): 299–305. http://dx.doi.org/10.2298/sos1203299c.

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The Ca(Zn1/3Nb2/3)O3 (CZN) complex perovskite oxide has been studied for its attractive dielectric properties (?r=34, Qxf=15 890GHz, ?f=-48 ppm.?C-1) for applications such as multilayer ceramics capacitors or hyperfrequency resonators. Nevertheless, high temperatures (>1250?C) are required to obtain well dense CZN ceramic, prohibiting any silver co-sintering (Tf (Ag) = 961?C). For that reason, the sintering temperature lowering of CZN by glass phase?s additions has been investigated. This material is finally sinterable at low temperature with combined glass phase -lithium salt additions, and exhibits, at 1MHz, very low dielectric losses, a relatively high dielectric constant with a good stability versus temperature. The 2%weight of ZnO-SiO2-B2O3 glass phase and 1%wt of LiF added CZN sample sintered at 920?C exhibits a relative density higher than 95% and attractive dielectric properties: a dielectric constant ?r of 22, low dielectrics losses (tan (?)< 10-3), a temperature coefficient of the permittivity ??<100 ppm.?C-1, and an insulating resistivity higher than 1013?.cm. Its interesting properties and its co-sinterability with silver electrodes make this ceramic suitable for L.T.C.C applications.

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Kelele, Kiflom Gebremedhn, Aschalew Tadesse, Tegene Desalegn, Suresh Ghotekar, Ruthramurthy Balachandran, and Hanabe Chowdappa Ananda Murthy. "Synthesis and characterizations of metal ions doped barium strontium titanate (BST) nanomaterials for photocatalytic and electrical applications: A mini review." International Journal of Materials Research 112, no. 8 (August 1, 2021): 665–77. http://dx.doi.org/10.1515/ijmr-2020-8149.

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Abstract The ferroelectric barium strontium titanate (Ba1-xSrxTiO3) is a homogeneous solid solution prepared from the mixture of barium titanate (BaTiO3), strontium titanate (SrTiO3) and titanium (IV) isopropoxide. Barium strontium titanate (BST) nanomaterials with improved permittivity and dielectric properties due to their nano-properties have attracted great interest for extensive and versatile applications as super capacitors, dielectrics, ceramics and catalysts. Introduction of metal ion dopants into the parent system of BST significantly alters its structural, morphological, electrical, optical and dielectric characteristics. This review is aimed at addressing synthesis, characterization methods, photocatalytic and electrical applications of metal ions doped BST nanomaterials. The effect of doping BST, through metal ions, on its properties and application with most probable reasons have been thoroughly discussed.

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Yang, Bingbing, Yiqian Liu, Shun Lan, Lvye Dou, Ce-Wen Nan, and Yuan-Hua Lin. "High-entropy design for dielectric materials: Status, challenges, and beyond." Journal of Applied Physics 133, no. 11 (March 21, 2023): 110904. http://dx.doi.org/10.1063/5.0138877.

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Dielectric materials featured with polarization at an applied electric field have been demonstrated with a wide range of applications such as energy storage and conversion, thus triggering tremendous efforts in scientific and industrial research. To date, numerous strategies have been explored to improve the performance of dielectric materials; especially, the recently reported high-entropy design enabling flexible composition configuration and tunable functional properties has attracted increasing attention. In this contribution, we review the very recent investigations and applications of high-entropy design for dielectric materials, including dielectric energy storage, electrocalorics, piezoelectrics, and ferroelectrics, and address the challenges and remaining concerns. Finally, we suggest future research directions for the preparation and in-depth structure characterization of high-entropy dielectric materials. This review will provide a holistic view of the most state-of-the-art high-entropy dielectric materials and envision prospects of high-entropy design for dielectrics.

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Hacker, Nigel P. "Organic and Inorganic Spin-On Polymers for Low-Dielectric-Constant Applications." MRS Bulletin 22, no. 10 (October 1997): 33–38. http://dx.doi.org/10.1557/s0883769400034175.

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Low-dielectric-constant materials (k < 3.0) have the advantage of facilitating manufacture of higher performance integrated-circuit (IC) devices with minimal increases in chip size. The reduced capacitance given by these materials permits shrinkage of spacing between metal lines to below 0.25 μm and the ability to decrease the number of levels of metal in a device. The technologies being considered for low-k applications are chemical vapor deposition (CVD) or spin-on of polymeric materials. For both types of processes, there are methods and materials capable of giving k < 3.0 dielectric stacks. This article will focus on the spin-on approach and discuss the properties of both organic and inorganic spin-on polymers.While CVD SiO2 has been the mainstay of the industry, spin-on materials are appropriate for many dielectric applications. Polyimides have applications as electrical insulators, and traditional spin-on silicates or siloxanes (k > 3.0) have served as planarizing dielectrics during the last 15 years. The newer spin-on polymers have greatly enhanced mechanical, thermal, and chemical properties, exhibiting lower dielectric constants than the traditional materials.

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Pietrikova, Alena, Kornel Ruman, Tibor Rovensky, and Igor Vehec. "Impact analysis of LTCC materials on microstrip filters’ behaviour up to 13 GHz." Microelectronics International 32, no. 3 (August 3, 2015): 122–25. http://dx.doi.org/10.1108/mi-01-2015-0003.

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Purpose – The purpose of this paper is to consider the adequacy of various microstrip filters’ behaviour based on different low-temperature co-fired ceramic (LTCC) dielectrics in the high frequency (HF) area up to 13 GHz. Design/methodology/approach – Low pass, band pass and band stop filters for ultra-wideband radar systems were designed, simulated, fabricated and measured using three various dielectric substrates: Dupont GreenTape 951, Dupont GreenTape 9K7 and Murata LFC. Findings – It is not possible to unambiguously determine the most suitable LTCC dielectric for these filter design because, in general, all designed filters fulfilled requirements (attenuation, cut off frequencies) with minimal divergences, but temperature-stable dielectric and physical properties of Murata LFC make them a promising ceramic for HF application (repeatability of realised experiments). Originality/value – The novelty of this work lies in unconventional usage of LTCC as material with defined dielectric properties proper for HF applications.

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Modes, Christina, Stefan Malkmus, and Frieder Gora. "High K Low Loss Dielectrics Co-Fireable with LTCC." Active and Passive Electronic Components 25, no. 2 (2002): 141–45. http://dx.doi.org/10.1080/08827510212346.

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Rapid growth in the application of LTCC technology for RF wireless is clearly driven by the trend of miniaturization and mobile communication systems. This technology provides the possibility of integration of passive components in a cost effective way. Heraeus has implemented compatible high permitivity and low loss dielectrics with NPO performance into modified Heraeus CT700 low temperature co-fired ceramic tape system. The majority of commercially available microwave dielectrics show increasing firing temperatures>200 °Cwhich make them incompatible with Ag metallizations or show high dielectric loss which limit their usage in RF wireless applications. This development work demonstrates the integration of a low loss, high permittivityε=60dielectric tape into a conventional Ag bearing LTCC structure. The concept of a dual sintering process is introduced and the resultant mechanical benefits with regard to tape fired shrinkage are explained in detail. Permittivity and dielectric loss data at RF for the new structure are presented. These high K and low loss dielectrics along with a comprehensive material system developed by Heraeus will support customers in meeting the challenges of reducing cost and enhancing the performance of RF devices for high frequency applications.

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Fofana, Issouf, and U. Rao. "Engineering Dielectric Liquid Applications." Energies 11, no. 10 (October 15, 2018): 2756. http://dx.doi.org/10.3390/en11102756.

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Takada, T., T. Mizutani, and T. Tanaka. "Advances in dielectric applications." IEEE Transactions on Dielectrics and Electrical Insulation 8, no. 1 (February 2001): 1–2. http://dx.doi.org/10.1109/tdei.2001.910419.

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Kim, Min-Jin, Cheol-Jun Kim, and Bo-Soo Kang. "Mechanism of the Wake-Up and the Split-Up in AlOx/Hf0.5Zr0.5Ox Film." Nanomaterials 13, no. 14 (July 24, 2023): 2146. http://dx.doi.org/10.3390/nano13142146.

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Dielectric layers are widely used in ferroelectric applications such as memory and negative capacitance devices. The wake-up and the split-up phenomena in the ferroelectric hafnia are well-known challenges in early-stage device reliability. We found that the phenomena even occur in the bilayer, which is composed of the hafnia and the dielectrics. The phenomena are known to be affected mainly by oxygen vacancies of hafnia. Dielectric layers, which are often metal oxides, are also prone to be affected by oxygen vacancies. To study the effect of the dielectric layer on the wake-up and the split-up phenomena, we fabricated ferroelectric thin-film capacitors with dielectric layers of various thicknesses and measured their field-cycling behaviors. We found that the movement of oxygen vacancies in the dielectric layer was predominantly affected by the polarization state of the ferroelectric layer. In addition, the mechanism of the field-cycling behavior in the bilayer is similar to that in ferroelectric thin films. Our results can be applied in ferroelectric applications that use dielectric layers.

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Wei, Peng Fei. "Dielectric Properties of Na₂O Doped Cao-B₂O₃-SiO₂ System Glass-Ceramics." Advanced Materials Research 750-752 (August 2013): 492–96. http://dx.doi.org/10.4028/www.scientific.net/amr.750-752.492.

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The behavior of dielectric and microwave properties against sintering temperature was been carried out on CaO-B2O3-SiO2glass-ceramics with Na2O addition by XRD and SEM. The results show that 0.5 wt.% Na2O addition is advantageous to improve the dielectric and microwave properties due to increasing the major crystalline CaSiO3. With further increasing Na2O content, α-SiO2is the predominant crystalline phase instead of CaSiO3. The CBS glass-ceramics with 0.5 wt.% Na2O sintered at 875°C has a bulk density of 2.51g·cm-3, and which possesses good dielectric properties:εr=6.2,tanδ=1.9×10-3(10 MHz) and low dielectric constant below 2×10-3over a wide frequency range. The proposed dielectrics can find applications in microwave devices, which require low dielectric loss and low dielectric constant.

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Park, Se Yeon, Moonjeong Jang, Wooseok Song, Sun Sook Lee, Dae Ho Yoon, and Ki-Seok An. "Boosted dielectric performance of organic–inorganic nanocomposites based on BaTiO₃ via 2D TiO₂ templates." Functional Composites and Structures 3, no. 4 (December 1, 2021): 045009. http://dx.doi.org/10.1088/2631-6331/ac4279.

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Abstract Organic–inorganic hybrid dielectrics composed of nanoscale ceramic fillers in polymer matrices have attracted considerable attention because they can overcome the inherent limitations such as the low dielectric constant, high dielectric loss, and low film density associated with mechanically flexible pristine polymer materials. Barium titanate (BaTiO3), a representative perovskite-based material with a high permittivity, is suitable for applications as nanofillers in nanocomposite dielectrics. X-ray diffraction combined with Raman analysis suggest that a two-step hydrothermal synthesis, which uses synthesized TiO2 nanosheets as a template, is an effective method for the synthesis of pure BaTiO3 nanoparticles compared with other methods. Ultrasonic treatment is employed to disperse BaTiO3 nanoparticles with different concentrations in polyvinyl alcohol (PVA) polymer, and the dielectric performance of the nanocomposite films has been examined. In this study, 20 wt% BaTiO3–PVA nanocomposite dielectric showed superior capacitance and dielectric constant performance, i.e. five times higher than that of the pristine PVA.

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Sahu, Kriti Ranjan, and Udayan De. "Dielectric Properties of Rhombohedral PbNb2O6." Journal of Solid State Physics 2013 (November 7, 2013): 1–9. http://dx.doi.org/10.1155/2013/451563.

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Dielectric materials are needed in many electrical and electronic applications. So, basic characterizations need to be done for all dielectrics. PbNb2O6 (PN) is ferroelectric and piezoelectric only in its orthorhombic phase, with potential high temperature applications. So, its rhombohedral phase, frequently formed as an undesirable impurity in the preparation of orthorhombic PN, has been ignored with respect to possible dielectric characterizations. Here, essentially single phase rhombohedral PN has been prepared, checking structure from XRD Rietveld Analysis, and the real and imaginary parts of permittivity measured in an Impedance Spectrometer (IS) up to ~700∘C and over 20 Hz to 5.5 MHz range, for heating and some cooling runs. Variations, with temperature, of relaxation time constant (τ), AC and DC conductivity, bulk resistance, activation energy and capacitance have been explored from our IS data.

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Zhang, Wenjie, Zhaohui Zeng, Tao Cheng, Tianhao Fei, Zhiwei Fu, Xiaoyan Liu, Jingyi Zhang, and Jia-Yue Yang. "Finite Temperature Ultraviolet-Visible Dielectric Functions of Tantalum Pentoxide: A Combined Spectroscopic Ellipsometry and First-Principles Study." Photonics 9, no. 7 (June 22, 2022): 440. http://dx.doi.org/10.3390/photonics9070440.

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Tantalum pentoxide (Ta2O5) has demonstrated promising applications in gate dielectrics and microwave communication devices with its intrinsically high dielectric constant and low dielectric loss. Although there are numerous studies on the dielectric properties of Ta2O5, few studies have focused on the influence of external environmental changes (i.e., temperature and pressure) on the dielectric properties and the underlying physics is not fully understood. Herein, we synthesize Ta2O5 thin films using the magnetron sputtering method, measure the ultraviolet-visible dielectric function at temperatures varying from 300 to 873 K by spectroscopic ellipsometry (SE), and investigate the temperature influence on the dielectric function from first principles. SE experiments observe that temperature has a nontrivial influence on the ultraviolet-visible dielectric function, accompanying the consistently decreased amplitude and increased broadening width for the dominant absorption peak. First-principles calculations confirm that the dominant absorption peak originates from the aggregated energy states near the valence band maximum (VBM) and conduction band minimum (CBM), and the theoretically predicted dielectric functions demonstrate good agreement with the SE experiments. Moreover, by performing first-principles molecular dynamics simulations, the finite-temperature dielectric function is predicted and its change trend with increasing temperature agrees overall with the SE measurements. This work explores the physical origins of temperature influence on the ultraviolet-visible dielectric function of Ta2O5, aimed at promoting its applications in the field of micro-/nanoelectronics.

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Wang, Yuxin, Xingyi Huang, Tao Li, Zhongwu Wang, Liqiang Li, Xiaojun Guo, and Pingkai Jiang. "Novel crosslinkable high-k copolymer dielectrics for high-energy-density capacitors and organic field-effect transistor applications." J. Mater. Chem. A 5, no. 39 (2017): 20737–46. http://dx.doi.org/10.1039/c7ta06005j.

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Novel dielectric materials using crosslinkable high-kcopolymers were prepared with high energy density and high efficiency. They were also applied as OFET gate dielectrics to achieve low-voltage operation.

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Susarla, Sandhya, Thierry Tsafack, Peter Samora Owuor, Anand B. Puthirath, Jordan A. Hachtel, Ganguli Babu, Amey Apte, et al. "High-K dielectric sulfur-selenium alloys." Science Advances 5, no. 5 (May 2019): eaau9785. http://dx.doi.org/10.1126/sciadv.aau9785.

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Upcoming advancements in flexible technology require mechanically compliant dielectric materials. Current dielectrics have either high dielectric constant, K (e.g., metal oxides) or good flexibility (e.g., polymers). Here, we achieve a golden mean of these properties and obtain a lightweight, viscoelastic, high-K dielectric material by combining two nonpolar, brittle constituents, namely, sulfur (S) and selenium (Se). This S-Se alloy retains polymer-like mechanical flexibility along with a dielectric strength (40 kV/mm) and a high dielectric constant (K = 74 at 1 MHz) similar to those of established metal oxides. Our theoretical model suggests that the principal reason is the strong dipole moment generated due to the unique structural orientation between S and Se atoms. The S-Se alloys can bridge the chasm between mechanically soft and high-K dielectric materials toward several flexible device applications.

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ZHANG, QIWEI, JIWEI ZHAI, and LING BING KONG. "RELAXOR FERROELECTRIC MATERIALS FOR MICROWAVE TUNABLE APPLICATIONS." Journal of Advanced Dielectrics 02, no. 01 (January 2012): 1230002. http://dx.doi.org/10.1142/s2010135x12300022.

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With strong dependences of dielectric constant on external applied electric fields, relaxor barium zirconium titanate ( BaZr x Ti 1-x O 3 or BZT) and barium stannate titanate ( BaSn x Ti 1-x O 3 or BTS), in both bulk ceramic and thin film forms, are increasingly being recognized as potential candidates of microwave tunable materials for device applications. This paper is aimed to review the recent progress in understanding the dielectric properties (such as tunability, dielectric loss and dielectric constant) of these relaxor materials. However, due to their relatively high dielectric constant and loss tangent, pure Ba(Zr,Ti)O3 and Ba(Sn,Ti)O3 do not fully satisfy the requirements of practical device applications. Therefore, various strategies have been developed to improve the dielectric properties of these two groups of relaxor materials. In this paper, we first discussed the dielectric tunability characteristics of pure Ba(Zr,Ti)O3 and Ba(Sn,Ti)O3 and then summarized the strategies that have been used, including (i) small amount acceptor or donor doping (such as rare-earth ions and transition metal ions) and (ii) forming composites with low loss and low dielectric constant microwave dielectric materials (such as MgO , MgTiO3 and so on). At the same time, the relationship between relaxor behavior and dielectric tunability was also discussed.

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Zhang, Mingxin, Cong Zhang, Yahan Yang, Hang Ren, Junmo Zhang, Xiaoli Zhao, Yanhong Tong, Qingxin Tang, and Yichun Liu. "Highly Stable Nonhydroxyl Antisolvent Polymer Dielectric: A New Strategy towards High-Performance Low-Temperature Solution-Processed Ultraflexible Organic Transistors for Skin-Inspired Electronics." Research 2021 (December 8, 2021): 1–12. http://dx.doi.org/10.34133/2021/9897353.

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Scarcity of the antisolvent polymer dielectrics and their poor stability have significantly prevented solution-processed ultraflexible organic transistors from low-temperature, large-scale production for applications in low-cost skin-inspired electronics. Here, we present a novel low-temperature solution-processed PEI-EP polymer dielectric with dramatically enhanced thermal stability, humidity stability, and frequency stability compared with the conventional PVA/c-PVA and c-PVP dielectrics, by incorporating polyethyleneimine PEI as crosslinking sites in nonhydroxyl epoxy EP. The PEI-EP dielectric requires a very low process temperature as low as 70°C and simultaneously possesses the high initial decomposition temperature (340°C) and glass transition temperature (230°C), humidity-resistant dielectric properties, and frequency-independent capacitance. Integrated into the solution-processed C8-BTBT thin-film transistors, the PEI-EP dielectric enables the device stable operation in air within 2 months and in high-humidity environment from 20 to 100% without significant performance degradation. The PEI-EP dielectric transistor array also presents weak hysteresis transfer characteristics, excellent electrical performance with 100% operation rate, high mobility up to 7.98 cm2 V-1 s-1 (1 Hz) and average mobility as high as 5.3 cm2 V-1 s-1 (1 Hz), excellent flexibility with the normal operation at the bending radius down to 0.003 mm, and foldable and crumpling-resistant capability. These results reveal the great potential of PEI-EP polymer as dielectric of low-temperature solution-processed ultraflexible organic transistors and open a new strategy for the development and applications of next-generation low-cost skin electronics.

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Ahmad, R., M. S. Shamsudin, M. Salina, S. M. Sanip, M. Rusop, and Z. Awang. "Characterization of MgZnO Thin Film for 1 GHz MMIC Applications." Advanced Materials Research 832 (November 2013): 310–15. http://dx.doi.org/10.4028/www.scientific.net/amr.832.310.

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MgZnO thin films are proposed as a new dielectric material for 1 GHz monolithic microwave integrated circuit (MMIC) applications. The high permittivity of this material enables size reduction; furthermore this can be fabricated using a low cost processing method. In this work, MgZnO/Pt/Si thin films were synthesized using a sol-gel spin coating method. The samples were annealed at various temperatures with the effects on physical and electrical properties investigated at direct current (DC) and high frequencies. The physical properties of MgZnO thin film were analyzed using X-Ray diffraction, with the improvements shown in crystalline structure and grain size with increasing temperature up to 700 °C. DC resistivity of 77 Ωcm at higher annealing temperature obtained using a four point probe station. In order to prove the feasibility at high frequencies, a test structure consisting of a 50 Ω transmission line and capacitors with 50 × 50 μm electrode area were patterned on the films using electron beam lithography. The radio frequency (RF) properties were measured using aWiltron 37269Avector network analyzer andCascade Microtechon-wafer probes measured over a frequency range of 0.5 to 3 GHz. The dielectric constant, loss tangent and return loss, S11improve with the increment annealing temperature. The dielectric constant was found to be 18.8, with loss tangent of 0.02 at 1 GHz. These give a corresponding size reduction of ten times compared to conventional dielectrics, silicon nitride (Si3N4). These indicate that the material is suitable to be implemented as a new dielectric material for 1GHz MMIC applications.

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PEREL'MAN, M. E., and R. ENGLMAN. "SOME EXTENSIONS AND APPLICATIONS OF DISPERSION RELATIONS." Modern Physics Letters B 14, no. 25n26 (November 10, 2000): 907–17. http://dx.doi.org/10.1142/s0217984900001142.

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The rationale of dispersion relations (DR) is traced to von Neumann's "state properties" and is given a unifying formulation by the introduction of "equations of restriction". Some questions surrounding reciprocal relations in the time domain are discussed. Then, extensions of DR to multi-variable cases are formulated through extended "equations of restrictions", which may be exact or approximate. These equations are applied to nonlocal dielectrics (admitting of polariton modes), which are shown to obey (in general) light-cone causality, though cases might occur in which a modification of the postulated dielectric functions is needed.

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Lee, Wei William, and Paul S. Ho. "Low-Dielectric-Constant Materials for ULSI Interlayer-Dielectric Applications." MRS Bulletin 22, no. 10 (October 1997): 19–27. http://dx.doi.org/10.1557/s0883769400034151.

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Continuing improvement of microprocessor performance historically involves a decrease in the device size. This allows greater device speed, an increase in device packing density, and an increase in the number of functions that can reside on a single chip. However higher packing density requires a much larger increase in the number of interconnects. This has led to an increase in the number of wiring levels and a reduction in the wiring pitch (sum of the metal line width and the spacing between the metal lines) to increase the wiring density. The problem with this approach is that—as device dimensions shrink to less than 0.25 μm (transistor gate length)—propagation delay, crosstalk noise, and power dissipation due to resistance-capacitance (RC) coupling become significant due to increased wiring capacitance, especially interline capacitance between the metal lines on the same metal level. The smaller line dimensions increase the resistivity (R) of the metal lines, and the narrower interline spacing increases the capacitance (C) between the lines. Thus although the speed of the device will increase as the feature size decreases, the interconnect delay becomes the major fraction of the total delay and limits improvement in device performance.To address these problems, new materials for use as metal lines and interlayer dielectrics (ILD) as well as alternative architectures have been proposed to replace the current Al(Cu) and SiO2 interconnect technology.

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Choi, Junhwan, and Hocheon Yoo. "Combination of Polymer Gate Dielectric and Two-Dimensional Semiconductor for Emerging Field-Effect Transistors." Polymers 15, no. 6 (March 10, 2023): 1395. http://dx.doi.org/10.3390/polym15061395.

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Two-dimensional (2D) materials are considered attractive semiconducting layers for emerging field-effect transistors owing to their unique electronic and optoelectronic properties. Polymers have been utilized in combination with 2D semiconductors as gate dielectric layers in field-effect transistors (FETs). Despite their distinctive advantages, the applicability of polymer gate dielectric materials for 2D semiconductor FETs has rarely been discussed in a comprehensive manner. Therefore, this paper reviews recent progress relating to 2D semiconductor FETs based on a wide range of polymeric gate dielectric materials, including (1) solution-based polymer dielectrics, (2) vacuum-deposited polymer dielectrics, (3) ferroelectric polymers, and (4) ion gels. Exploiting appropriate materials and corresponding processes, polymer gate dielectrics have enhanced the performance of 2D semiconductor FETs and enabled the development of versatile device structures in energy-efficient ways. Furthermore, FET-based functional electronic devices, such as flash memory devices, photodetectors, ferroelectric memory devices, and flexible electronics, are highlighted in this review. This paper also outlines challenges and opportunities in order to help develop high-performance FETs based on 2D semiconductors and polymer gate dielectrics and realize their practical applications.

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Hayes, Colin O., Kevin Wang, Rosemary Bell, Colin Calabrese, Jeff Kong, Jennie Paik, Lingyun Wei, Kirk Thompson, Michael Gallagher, and Robert K. Barr. "Low Loss Photodielectric Materials for 5G HS/HF Applications." International Symposium on Microelectronics 2019, no. 1 (October 1, 2019): 000037–41. http://dx.doi.org/10.4071/2380-4505-2019.1.000037.

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Abstract Fifth generation network technology, often referred to as 5G, holds great potential for higher communication speeds, higher data transmission rates and improved connectivity, however, current dielectric materials lack sufficiently low dielectric loss (Df) at desired form factors for next-generation devices. While photoimageable dielectrics will certainly play a role in 5G manufacturing, many of the chemistries that have evolved and are suitable for photodielectrics (aqueous developed and polar solvent developed materials) have a Df that is too high for a 5G devices. Arylalkyl thermoset polymers (ATPs) have long been known for its low dielectric properties and found use in many high frequency applications, especially GaAs devices. An existing ATP photodielectric, CYCLOTENE™ 4000 Series Dielectric is characterized and compared to a newly designed experimental platform herein called 5G-XP-1. The platform developed utilizes new monomer and polymer chemistry to deliver a system capable of low temperature cure within 1 hour between 170–200°C, self-priming adhesion on silicon, copper, silicon nitride and polyimide and low Df at high frequency in a full formulation (<0.005 20–40GHz). 5G-XP-1 is deposited as a spin on photodielectric material but is still capable of achieving a variety of final film thicknesses from 15–25 μm. More importantly the formulation can achieve high aspect ratio imaging with 1:1 AR vias using an i-Line Karl Süss Mask Aligner. Moreover, this photodielectric material can be developed using environmentally-friendly solvents, such as esters like propylene glycol monomethyl ether acetate (PGMEA). The new experimental material 5G-XP-1 spin on photodielectric material demonstrates considerable promise for next-generation 5G devices, with future improvements on mechanical properties already in progress.

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39

Scaife, B. K. P. "Dielectric Materials, Measurements and Applications." Power Engineering Journal 3, no. 2 (1989): 92. http://dx.doi.org/10.1049/pe:19890016.

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Nelson, Stuart O. "Agricultural Applications of Dielectric Spectroscopy." Journal of Microwave Power and Electromagnetic Energy 39, no. 2 (January 2004): 75–85. http://dx.doi.org/10.1080/08327823.2004.11688510.

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Scaife, B. K. P. "Dielectric Materials, Measurements and Applications." Electronics and Power 31, no. 1 (1985): 84. http://dx.doi.org/10.1049/ep.1985.0055.

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42

Smith, C. W. "Dielectric Materials, Measurements and Applications." IEE Review 35, no. 3 (1989): 98. http://dx.doi.org/10.1049/ir:19890047.

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Cummings, Karen A., and Subhash H. Risbud. "Dielectric materials for window applications." Journal of Physics and Chemistry of Solids 61, no. 4 (April 2000): 551–60. http://dx.doi.org/10.1016/s0022-3697(99)00253-x.

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Nelson, S. O. "Agricultural applications of dielectric measurements." IEEE Transactions on Dielectrics and Electrical Insulation 13, no. 4 (August 2006): 688–702. http://dx.doi.org/10.1109/tdei.2006.1667726.

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Gorzkowski, E. P., and M. J. Pan. "Dielectric Composites for Naval Applications." JOM 66, no. 2 (December 10, 2013): 261–69. http://dx.doi.org/10.1007/s11837-013-0824-8.

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Yang, Ziqi, Bing Wang, Yizhe Li, and David A. Hall. "Enhancement of Nonlinear Dielectric Properties in BiFeO3–BaTiO3 Ceramics by Nb-Doping." Materials 15, no. 8 (April 14, 2022): 2872. http://dx.doi.org/10.3390/ma15082872.

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BiFeO3–BaTiO3 (BF–BT) ceramics exhibit great potential for diverse applications in high temperature piezoelectric transducers, temperature-stable dielectrics and pulsed-power capacitors. Further optimization of functional properties for different types of applications can be achieved by modification of processing parameters or chemical composition. In the present work, the influence of pentavalent niobium substitution for trivalent ferric ions on the structure, microstructure and dielectric properties of 0.7BF–0.3BT ceramics was investigated systematically. Doping with niobium led to incremental reductions in grain size (from 7.0 to 1.3 µm) and suppression of long-range ferroelectric ordering. It was found that core-shell type microstructural features became more prominent as the Nb concentration increased, which were correlated with the formation of distinct peaks in the dielectric permittivity–temperature relationship, at ~470 and 600 °C, which were attributed to the BT-rich shell and BF-rich core regions, respectively. Nb-doping of BF–BT ceramics yielded reduced electronic conductivity and dielectric loss, improved electrical breakdown strength and enhanced dielectric energy storage characteristics. These effects are attributed to the charge compensation of pentavalent Nb donor defects by bismuth vacancies, which suppresses the formation of oxygen vacancies and the associated electron hole conduction mechanism. The relatively high recoverable energy density (Wrec = 2.01 J cm−3) and energy storage efficiency (η = 68%) of the 0.7BiFeO3–0.3BaTiO3 binary system were achieved at 75 °C under an electric field of 15 kV mm−1. This material demonstrates the greatest potential for applications in energy storage capacitors and temperature-stable dielectrics.

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Farrokhi, Maryam, Rahim Faez, Saeed Haji Nasiri, and Bita Davoodi. "Effect of Varying Dielectric Constant on Relative Stability for Graphene Nanoribbon Interconnects." Applied Mechanics and Materials 229-231 (November 2012): 201–4. http://dx.doi.org/10.4028/www.scientific.net/amm.229-231.201.

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The remarkable properties of graphene nanoribbons (GNRs) make them attractive for nano-scale devices applications, especially for transistor and interconnect. Furthermore, for reduction interconnects signal delay, low dielectric constant materials are being introduced to replace conventional dielectrics in next generation IC technologies. With these regards, studding the effect of varying dielectric constant (ɛr) on relative stability of graphene nanoribbons interconnect is an important viewpoint in performance evaluation of system. In this paper, Nyquist stability analysis based on transmission line modeling (TLM) for graphene nanoribbon interconnects is investigated. In this analysis, the dependence of the degree of relative stability for multilayer GNR (MLGNR) interconnects on the dielectric constant has been acquired. It is shown that, increasing the dielectric constant of each ribbon, MLGNR interconnects become more stable.

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BERSUKER, GENNADI, BYOUNG HUN LEE, and HOWARD R. HUFF. "Novel Dielectric Materials for Future Transistor Generations." International Journal of High Speed Electronics and Systems 16, no. 01 (March 2006): 221–39. http://dx.doi.org/10.1142/s012915640600362x.

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Relations between the electronic properties of high-k materials and electrical characteristics of high-k transistor are discussed. It is pointed out that the intrinsic limitations of these materials from the standpoint of gate dielectric applications are related to the presence of d-electrons, which facilitate high values of the dielectric constant. It is shown that the presence of structural defects responsible for electron trapping and fixed charges, and the dielectrics' tendency for crystallization and phase separation induce threshold voltage instability and mobility degradation in high-k transistors. The quality of the SiO 2-like layer at the high-k/ Si substrate interface, as well as dielectric interaction with the gate electrode, may significantly affect device characteristics.

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Lo, Wai, Arvind Kamath, Shreyas Kher, Craig Metzner, Jianguo Wen, and Zhihao Chen. "Deposition and characterization of HfO2 high k dielectric films." Journal of Materials Research 19, no. 6 (June 2004): 1775–82. http://dx.doi.org/10.1557/jmr.2004.0247.

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As the scaling of complementary metal-oxide-semiconductor (CMOS) transistors proceeds, the thickness of the SiO2 gate dielectrics shrinks rapidly and results in higher gate leakage currents. High k dielectric materials are acknowledged to be the possible solutions to this challenge, as their higher k values (e.g., 15–50) raise the physical thickness of the dielectrics that provide similar equivalent thickness of a thinner SiO2 film. In order for the high k materials to be applicable in CMOS devices, there should exist deposition technologies that can deposit highly uniform films over Si wafers with diameters as large as 200 mm. This report discusses the deposition process and the correlation between the growth conditions, structural and dielectric properties of HfO2, which is one of the most promising high k dielectric materials. Judging from the thickness uniformity, surface roughness, k value, and interfacial density of state of the HfO2 films, the metalorganic chemical vapor deposition technique was identified to be suitable for growing HfO2 films targeted at applications as CMOS gate dielectrics.

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Seongtae Kwon, W. Hackenberger, E. Alberta, E. Furman, and M. Lanagan. "Nonlinear dielectric ceramics and their applications to capacitors and tunable dielectrics." IEEE Electrical Insulation Magazine 27, no. 2 (March 2011): 43–55. http://dx.doi.org/10.1109/mei.2011.5739422.

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Journal articles on the topic 'Dielectric Applications'

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