Relevant bibliographies by topics / Dielectric Materials

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Dielectric Materials'

Author: Grafiati
Published: 4 June 2021
Last updated: 6 September 2023

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Journal articles on the topic "Dielectric Materials"

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Singh, Rajenda, and Richard K. Ulrich. "High and Low Dielectric Constant Materials." Electrochemical Society Interface 8, no. 2 (June 1, 1999): 26–30. http://dx.doi.org/10.1149/2.f06992if.

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Silicon-based dielectrics (SiO2, Si3N4, SiOxNy etc.) have been widely used as the key dielectrics in the manufacturing of silicon integrated circuits (ICs) and virtually all other semiconductor devices. Dielectrics having a value of dielectric constant k × 8.854 F/cm more than that of silicon nitride (k > 7) are classified as high dielectric constant materials, while those with a value of k less than the dielectric constant of silicon dioxide (k < 3.9) are classified as the low dielectric constant materials. The minimum value of (k) is one for air. The highest value of k has been reported for relaxor ferroelectric (k = 24,700 at 1 kHz).
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Sathyakam, P. Uma, and Partha S. Mallick. "Future Dielectric Materials for CNT Interconnects - Possibilities and Challenges." Journal of Nano Research 52 (May 2018): 21–42. http://dx.doi.org/10.4028/www.scientific.net/jnanor.52.21.

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Carbon nanotube (CNT) interconnects are emerging as the ultimate choice for next generation ultra large scale integrated (ULSI) circuits. Significant progress in precise growth of aligned CNTs and integration of multiwalled CNT interconnects into a test chip make them promising candidates for future nanoelectronic chips. Tremendous research efforts were made on silicon based ultra-low-k dielectrics for Cu interconnects, but, the most recent advancements in polymer based composites as dielectric materials open up fresh challenges in the use of low-k dielectrics for CNT interconnects. This paper reviews the emerging polymer composites like Boron Nitride Nanotubes, Graphene/Polyimide composites, Metal Organic Frameworks and small diameter CNTs. Many reviews are already exists on the synthesis, fabrication, dielectric, mechanical, chemical and thermal properties of these materials. In this review, we have explained the specific properties of these materials and the necessities for integrating them into CNT interconnects to meet the requirements of future IC designers.Keywords: low-k dielectric materials, ultra low-k dielectrics, carbon nanotubes, interconnects, dielectric constant,
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BERSUKER, GENNADI, BYOUNG HUN LEE, and HOWARD R. HUFF. "Novel Dielectric Materials for Future Transistor Generations." International Journal of High Speed Electronics and Systems 16, no. 01 (March 2006): 221–39. http://dx.doi.org/10.1142/s012915640600362x.

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Relations between the electronic properties of high-k materials and electrical characteristics of high-k transistor are discussed. It is pointed out that the intrinsic limitations of these materials from the standpoint of gate dielectric applications are related to the presence of d-electrons, which facilitate high values of the dielectric constant. It is shown that the presence of structural defects responsible for electron trapping and fixed charges, and the dielectrics' tendency for crystallization and phase separation induce threshold voltage instability and mobility degradation in high-k transistors. The quality of the SiO 2-like layer at the high-k/ Si substrate interface, as well as dielectric interaction with the gate electrode, may significantly affect device characteristics.
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Baklanov, Mikhail R., and Karen Maex. "Porous low dielectric constant materials for microelectronics." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 364, no. 1838 (November 29, 2005): 201–15. http://dx.doi.org/10.1098/rsta.2005.1679.

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Materials with a low dielectric constant are required as interlayer dielectrics for the on-chip interconnection of ultra-large-scale integration devices to provide high speed, low dynamic power dissipation and low cross-talk noise. The selection of chemical compounds with low polarizability and the introduction of porosity result in a reduced dielectric constant. Integration of such materials into microelectronic circuits, however, poses a number of challenges, as the materials must meet strict requirements in terms of properties and reliability. These issues are the subject of the present paper.
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Zhao, Cuijiao, Xiaonan Wei, Yawen Huang, Jiajun Ma, Ke Cao, Guanjun Chang, and Junxiao Yang. "Preparation and unique dielectric properties of nanoporous materials with well-controlled closed-nanopores." Physical Chemistry Chemical Physics 18, no. 28 (2016): 19183–93. http://dx.doi.org/10.1039/c6cp00465b.

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Although general porous materials have a low dielectric constant, their uncontrollable opened porous structure results in high dielectric loss and poor barrier properties, thus limiting their application as interconnect dielectrics.
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Phillips, Jonathan. "Theoretical and experimental basis for the super dielectric model of dielectric materials." Physics Essays 33, no. 3 (September 11, 2020): 306–18. http://dx.doi.org/10.4006/0836-1398-33.3.306.

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Two theories of the fields generated by charges on parallel plate capacitors, the standard model (SM) found in virtually all text books and the recently proposed super dielectric material-theory (SDM-Theory), are described, and contrasted, in terms of theory and experimentally tested predictions. Only the SDM-Theory model is found to be consistent with thermodynamics, basic field theory, and experimental results. According to the SM, dielectrics in the volume between the electrodes of a parallel plate capacitor store the energy in a capacitor in the form of greatly, relative to the no dielectric case, increased electric field strength. This model is shown to be inconsistent with path independent changes in state property (e.g., voltage), and predicts, incorrectly, that dielectric material outside the volume between the electrodes will have no effect on any measurable properties such as capacitance and energy density. In contrast, according to SDM-Theory, a theory shown to be consistent with path independent changes in state properties, as well as “conservative field theory,” the increased stored energy in the presence of dielectrics is not associated with energy in fields, but rather it is due to the “extra” charges stored on the electrodes. The extra charge is required to create a given net field in the presence of a dielectric. Indeed, according to SDM-Theory, the effect of dielectric material, because its polarization is opposite to the electrodes, reduces the net field at all points in space, including within the volume of the dielectric. This is the absolute opposite of the “action” of a dielectric predicated by the SM. In the SDM-Theory, at a given capacitor voltage, virtually identical net fields exist with and without a dielectric, but the capacitance (amount of stored charge) and stored energy, a linear function of the amount of stored charge, of the latter configuration can be many orders of magnitude greater. Moreover, SDM-Theory predicts, consistent with recent observations, that dielectric material external to the volume between electrodes should be nearly as effective at increasing capacitance, etc., as the same dielectric material between the electrodes.
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Yang, Bingbing, Yiqian Liu, Shun Lan, Lvye Dou, Ce-Wen Nan, and Yuan-Hua Lin. "High-entropy design for dielectric materials: Status, challenges, and beyond." Journal of Applied Physics 133, no. 11 (March 21, 2023): 110904. http://dx.doi.org/10.1063/5.0138877.

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Dielectric materials featured with polarization at an applied electric field have been demonstrated with a wide range of applications such as energy storage and conversion, thus triggering tremendous efforts in scientific and industrial research. To date, numerous strategies have been explored to improve the performance of dielectric materials; especially, the recently reported high-entropy design enabling flexible composition configuration and tunable functional properties has attracted increasing attention. In this contribution, we review the very recent investigations and applications of high-entropy design for dielectric materials, including dielectric energy storage, electrocalorics, piezoelectrics, and ferroelectrics, and address the challenges and remaining concerns. Finally, we suggest future research directions for the preparation and in-depth structure characterization of high-entropy dielectric materials. This review will provide a holistic view of the most state-of-the-art high-entropy dielectric materials and envision prospects of high-entropy design for dielectrics.
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Busch, Brett W., Olivier Pluchery, Yves J. Chabal, David A. Muller, Robert L. Opila, J. Raynien Kwo, and Eric Garfunkel. "Materials Characterization of Alternative Gate Dielectrics." MRS Bulletin 27, no. 3 (March 2002): 206–11. http://dx.doi.org/10.1557/mrs2002.72.

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AbstractContinued scaling of microelectronic devices is demanding that alternatives to SiO2 as the gate dielectric be developed soon. This in turn has placed enormous pressure on the abilities of physical characterization techniques to address critical issues such as film and interface structure and composition, transport properties, and thermal or chemical stability. This article summarizes the strengths and capabilities of four techniques used for the materials characterization of alternative gate dielectrics: scanning transmission electron microscopy (STEM) in conjunction with electron energy-loss spectroscopy (EELS), medium-energy ion scattering (MEIS), infrared-absorption spectroscopy (IRAS), and x-ray photoelectron spectroscopy (XPS). The complementary nature of these techniques has allowed for a detailed picture of the various properties of alternative gate dielectrics, and in particular of the dielectric/silicon interface. Critical issues and features of several important alternative gate dielectrics, ZrO2, AI2O3, Y2O3, and Gd2O3, are explored in light of the well-studied SiO2/Si system.
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Anju Balaraman, Anina, and Soma Dutta. "Inorganic dielectric materials for energy storage applications: a review." Journal of Physics D: Applied Physics 55, no. 18 (January 19, 2022): 183002. http://dx.doi.org/10.1088/1361-6463/ac46ed.

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Abstract The intricacies in identifying the appropriate material system for energy storage applications have been the biggest struggle of the scientific community. Countless contributions by researchers worldwide have now helped us identify the possible snags and limitations associated with each material/method. This review intends to briefly discuss state of the art in energy storage applications of dielectric materials such as linear dielectrics, ferroelectrics, anti-ferroelectrics, and relaxor ferroelectrics. Based on the recent studies, we find that the eco-friendly lead-free dielectrics, which have been marked as inadequate to compete with lead-based systems, are excellent for energy applications. Moreover, some promising strategies to improve the functional properties of dielectric materials are discussed.
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Lu, Feng Ming, Jiang Shao, Xiao Yu Liu, and Xing Hao Wang. "Research on TDDB Effect in High-k Materials." Advanced Materials Research 548 (July 2012): 203–8. http://dx.doi.org/10.4028/www.scientific.net/amr.548.203.

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With continual scaling of ICs, the thickness of gate oxide becomes thinner and thinner which affects the reliability of semiconductor device greatly. The mechanism of time-dependent dielectric breakdown (TDDB) was analyzed. Six mathematical models of TDDB which were divided according to the position of defects and the physical property of charged particles were discussed. Then the dielectric breakdown characteristic of high k dielectrics and the relationships between the breakdown electric field, field acceleration parameter and dielectric constant were analyzed in detail. Finally, the relationships and mathematical models were verified by experimental data which provided theoretical basis for the choosing and use of high k materials.
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Dissertations / Theses on the topic "Dielectric Materials"

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Blandin, Christopher. "Production of dielectric materials." Thesis, Atlanta, Ga. : Georgia Institute of Technology, 2008. http://hdl.handle.net/1853/26568.

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Thesis (M. S.)--Mechanical Engineering, Georgia Institute of Technology, 2009.
Committee Chair: Colton, Jonathan; Committee Member: Schultz, John; Committee Member: Zhou, Min. Part of the SMARTech Electronic Thesis and Dissertation Collection.
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Barelli, Eleonora. "Dielectric relaxation in biological materials." Bachelor's thesis, Alma Mater Studiorum - Università di Bologna, 2015. http://amslaurea.unibo.it/9102/.

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The study of dielectric properties concerns storage and dissipation of electric and magnetic energy in materials. Dielectrics are important in order to explain various phenomena in Solid-State Physics and in Physics of Biological Materials. Indeed, during the last two centuries, many scientists have tried to explain and model the dielectric relaxation. Starting from the Kohlrausch model and passing through the ideal Debye one, they arrived at more com- plex models that try to explain the experimentally observed distributions of relaxation times, including the classical (Cole-Cole, Davidson-Cole and Havriliak-Negami) and the more recent ones (Hilfer, Jonscher, Weron, etc.). The purpose of this thesis is to discuss a variety of models carrying out the analysis both in the frequency and in the time domain. Particular attention is devoted to the three classical models, that are studied using a transcendental function known as Mittag-Leffler function. We highlight that one of the most important properties of this function, its complete monotonicity, is an essential property for the physical acceptability and realizability of the models. Lo studio delle proprietà dielettriche riguarda l’immagazzinamento e la dissipazione di energia elettrica e magnetica nei materiali. I dielettrici sono importanti al fine di spiegare vari fenomeni nell’ambito della Fisica dello Stato Solido e della Fisica dei Materiali Biologici. Infatti, durante i due secoli passati, molti scienziati hanno tentato di spiegare e modellizzare il rilassamento dielettrico. A partire dal modello di Kohlrausch e passando attraverso quello ideale di Debye, sono giunti a modelli più complessi che tentano di spiegare la distribuzione osservata sperimentalmente di tempi di rilassamento, tra i quali modelli abbiamo quelli classici (Cole-Cole, Davidson-Cole e Havriliak-Negami) e quelli più recenti (Hilfer, Jonscher, Weron, etc.). L’obiettivo di questa tesi è discutere vari modelli, conducendo l’analisi sia nel dominio delle frequenze sia in quello dei tempi. Particolare attenzione è rivolta ai tre modelli classici, i quali sono studiati utilizzando una funzione trascendente nota come funzione di Mittag-Leffler. Evidenziamo come una delle più importanti proprietà di questa funzione, la sua completa monotonia, è una proprietà essenziale per l’accettabilità fisica e la realizzabilità dei modelli.
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Pliakostathis, Konstantinos. "Novel dielectric resonator antennas based on high permettivity dielectric materials." Thesis, University of Essex, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.410507.

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Cho, Taiheui. "Anisotropy of low dielectric constant materials and reliability of Cu/low-k interconnects /." Digital version accessible at:, 2000. http://wwwlib.umi.com/cr/utexas/main.

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Gulia, Kiran. "Pulsed laser processing of dielectric materials." Thesis, Heriot-Watt University, 2007. http://hdl.handle.net/10399/2035.

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The thesis investigates the wavelength dependent laser ablp..~ion in dielectric materials used for the fabrication ofhigh density Printed Circuit Boards (PCBs) in the electronics industry. Here the market for consumer and industrial products of ever-rising complexity has led to a demand for increased miniaturisation and low costs of multilevel printed circuit boards (PCBs) interconnected by microvias, which electrically connect the various circuit layers. Laser machining offers a potential solution to this need. The main objective of the research is to investigate the wavelength-dependence of the laser machining/drilling efficiency of two important sets of PCB materials, categorised as Organics and Ceramics using a carbon dioxide laser which can be tuned across its emission spectrum in the 9flm - 11 flm spectral region.. The organics include commercially available electronic materials with trade names such as Kapton, ArIon, FR4 and RCC and the ceramics materials studied are alumina and low temperature cofired ceramic (LTCC). The aim is to determine the optimum laser wavelength for maximum processing efficiency Le. to find the wavelength where the laser parameters are best matched to the optical, thermal and mechanical properties of each of the materials. A CO2 laser machining system was constructed which incorporated a novel laser source developed in the research programmes. The laser source was a MOPA system with a line-tuneable cw oscillator and a five pass power planar waveguide rf discharge-excited power operating in the so-called enhanced power regime to produce maximum peak power. An Acousto-optic modulator between the master oscillator and the amplifier allowed convenient control of pulse amplitude and duration. The system enabled the wavelength dependent studies on the wavelength and pulse energy dependence of the laser ablation properties (e.g. ablation threshold fluence and ablation rates) - to derive the so-called 'ablation spectrum' of the selected materials A comparison is made of the wavelength dependence of ablation with the room temperature absorption spectrum measured for each material using ellipsometry. It was observed that the 'ablation spectrum' information does not always appear to match the simple expectations derived from the room temperature 'absorption spectrum' of the material. This disparity in results is likely due to the change of absorption properties of • material because of rise in temperature, chemical decomposition or melting of material during ablation. However, the room temperature absorption spectrum (while not adequate alone), did provide a useful guide to the selection of a sub-set of the 40+ lines that would otherwise have to be studied. The results may be of direct application in the electronics industry to increase the efficiency oflaser machining.
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Zhou, Yuan. "Modeling and Simulation of Dielectric Materials." University of Akron / OhioLINK, 2007. http://rave.ohiolink.edu/etdc/view?acc_num=akron1185810210.

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Killian, Tyler Norton Rao S. M. "Numerical modeling of very thin dielectric materials." Auburn, Ala, 2008. http://repo.lib.auburn.edu/EtdRoot/2008/SUMMER/Electrical_and_Computer_Engineering/Thesis/Killian_Tyler_16.pdf.

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Martini, David M. "Metallization and Modification of Low-k Dielectric Materials." Thesis, University of North Texas, 2008. https://digital.library.unt.edu/ark:/67531/metadc9754/.

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Aluminum was deposited onto both Teflon AF and Parylene AF surfaces by chemical vapor deposition of trimethylaluminum. This work shows that similar thin film (100 Angstroms) aluminum oxide adlayers form on both polymers at the low temperature dosing conditions used in the studies. Upon anneal to room temperature and above, defluorination of the polymer surfaces increased and resulted in fluorinated aluminum oxide adlayers; the adlayers were thermally stable to the highest temperatures tested (600 K). Angle-resolved spectra showed higher levels of fluorination toward the polymer/adlayer interface region. Copper films were also deposited at low temperature onto Teflon AF using a copper hexafluoroacetylacetonate-cyclooctadiene precursor. Annealing up to 600 K resulted in the loss of precursor ligands and a shift to metallic copper. As with aluminum adlayers, some polymer defluorination and resulting metal (copper) fluoride was detected. Parylene AF and polystyrene films surfaces were modified by directly dosing with water vapor passed across a hot tungsten filament. Oxygen incorporation into polystyrene occurred exclusively at aromatic carbon sites, whereas oxygen incorporation into parylene occurred in both aromatic and aliphatic sites. Oxygen x-ray photoelectron spectra of the modified polymers were comparable, indicating that similar reactions occurred. The surface oxygenation of parylene allowed enhanced reactivity toward aluminum chemical vapor deposition. Silicon-carbon (Si-Cx) films were formed by electron beam bombardment of trimethylvinylsilane films which were adsorbed onto metal substrates at low temperatures in ultra-high vacuum. Oxygen was also added to the films by coadsorbing water before electron beam bombardment; the films were stable to more than 700 K, with increasing silicon-oxygen bond formation at elevated temperatures. Copper metal was sputter deposited in small increments onto non-oxygenated films. X-ray photoelectric spectra show three-dimensional copper growth (rather than layer-by-layer growth), indicating only weak interaction between the copper and underlying films. Annealing at elevated temperatures caused coalescence or growth of the copper islands, with spectra indicating metallic copper rather than copper oxide.
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Anwar, M. "Spectroscopic investigations of amorphous complex dielectric materials." Thesis, Brunel University, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.234036.

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Yu, Chuying. "Dielectric materials for high power energy storage." Thesis, Queen Mary, University of London, 2017. http://qmro.qmul.ac.uk/xmlui/handle/123456789/24852.

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Energy storage is currently gaining considerable attention due to the current energy crisis and severe air pollution. The development of new and clean forms of energy and related storing devices is in high demanded. Dielectric capacitors, exhibiting high power density, long life and cycling life, are potential candidates for portable devices, transport vehicles and stationary energy resources applications. However, the energy density of dielectric capacitors is relatively low compared to that of traditional batteries, which inhibits their future development. In the current work, three types of dielectrics, namely antiferroelectric samarium-doped BiFeO3 (Bi1-xSmxFeO3), linear dielectric (potential antiferroelectric) BiNbO4 and incipient ferroelectric TiO2, have been investigated to develop their potential as energy storage capacitors. For the samarium-doped BiFeO3 (Bi1-xSmxFeO3) system, the effect of samarium content in the A-site (x=0.15, 0.16, 0.165 and 0.18) on the structural phase transitions and electrical properties across the Morphotropic Phase Boundary (MPB) were studied. A complex coexistence of rhombohedral R3c, orthorhombic Pbam and orthorhombic Pnma was found in the selected compositions. The R3c phase is the structure of pure BiFeO3, the Pbam phase has a PbZrO3-like antiferroelectric structure and the Pnma phase has a SmFeO3-like paraelectric structure. The presence of the PbZrO3-like antiferroelectric structure was confirmed by the observation of the 14{110}, 14{001}, 12{011} and 12{111} superlattice reflections in the transmission electron microscopy diffraction patterns. The weight fractions of the three phases varied with different calcination conditions and Sm substitution level. By increasing the calcination temperature, the weight fractions of the Pbam increased, while that of the R3c decreased. The fraction of the Pnma phase is mainly derived by the Sm concentration and is barely affected by the calcination temperature. The increase of Sm concentration, determined an increase of the weight fraction of the Pnma phase and a decrease of the Pbam and the R3c phases. Temperature dependent dielectric measurements and high temperature XRD of Bi0.85Sm0.15FeO3 revealed several phase transitions. The drastic weight fraction change between the Pbam and the Pnma phase around 200 °C is assumed as the Curie transition of the antiferroelectric Pbam phase. The transition at 575 °C is related to the diminishing of the R3c phase and is suggested as the Curie transition of the ferroelectric R3c phase. The Curie point of the antiferroelectric Pbam phase and the ferroelectric R3c phase in the Bi1-xSmxFeO3 ceramics shifted towards lower temperature with an increase of the Sm concentration. Current peaks were obtained in current-electric field loops in Bi0.85Sm0.15FeO3, which are correlated to domain switching in the R3c phase. The ferroelectric behavior was suppressed in Bi1-xSmxFeO3 (x=0.16, 0.165, 0.18), which is due to the gradually diminished contribution from the R3c phase. The system Bi0.82Sm0.18FeO3 showed the highest energy density of 0.64 J cm-3 (error bar ±0.02). For the BiNbO4 system, single phase α-BiNbO4 (space group Pnna) and β-BiNbO4 (space group P-1) powder and ceramics were produced. The longstanding issue related to the sequence of the temperature-induced phase transitions has been clarified. It is demonstrated that the β phase powder could be converted back to the  phase when annealed in the temperature range 800 °C -1000 °C with certain incubation time. The β to  phase transition is a slow kinetic process because sufficient temperature and time are required for the transition. In bulk ceramics with β phase, this transformation is impeded by inner stress, while it is favored by graphite-induced reducing atmosphere. A high temperature  phase has been revealed and the structure has been resolved. The structure of the  phase is monoclinic with a space group of P21/c. The lattice parameters are: a = 7.7951(1) Å, b = 5.64993(9) Å, c = 7.9048(1) Å,  = 104.691(2) Z=4. The volume is 336.76 (2) Å3. The calculated density is 7.217 g cm-3. The phase relationships among ,  and  phases have been clarified. It was found that the  phase (for both powder and ceramic) transforms into the  phase at 1040 °C on heating, and that the  phase always transforms into the  phase at 1000 °C on cooling. Meanwhile, a reversible first-order  to  phase transition is observed at ca. 1000 °C for both powder and ceramic if no incubation is processed on heating. The electric properties of both α- and - BiNbO4 have been investigated. The breakdown field of both ceramics were too low to observe any possible field-induced transition. As a result, linear P-E loops were obtained in each phase. The energy densities of α- and - BiNbO4 ceramics are 0.03 and 0.04 J cm-3 (error bar ±0.001), respectively. For the TiO2 system, ceramics were produced by conventional sintering and spark plasma sintering (SPS). Compared to conventional sintering, SPS technique produced dense ceramics without using sintering aids and avoided abnormal grain growth. Relaxation behavior related to the oxygen hopping among vacant sites is observed in the temperature range of 200 to 600 °C. TiO2 exhibits ultra-low loss at terahertz frequencies due to the reduced contribution of oxygen vacancies relaxation. TiO2 has a high breakdown field, but still has low polarization. The highest energy density obtained inTiO2 ceramics is 0.3 J cm-3 (error bar ±0.01).
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Books on the topic "Dielectric Materials"

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M, Nair K., American Ceramic Society Meeting, and Advances in Dielectric Materials and Multilayer Electronic Devices Symposium (2000 : St. Louis, Missouri)., eds. Dielectric materials and devices. Westerville, Ohio: American Ceramic Society, 2002.

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Juan, Martinez-Vega, ed. Dielectric materials for electric engineering. London, U.K: ISTE, 2010.

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Juan, Martinez-Vega, ed. Dielectric materials for electric engineering. London, U.K: ISTE, 2010.

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S, Rathore Hazara, and Electrochemical Society. Dielectric Science and Technology Division., eds. Proceedings of the Second International Symposium on Low and High Dielectric Constant Materials: Materials Science, Processing, and Reliability Issues. Pennington, NJ: Electrochemical Society, 1997.

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Gallot-Lavallée, Olivier. Dielectric Materials and Electrostatics. Hoboken, NJ USA: John Wiley & Sons, Inc., 2013. http://dx.doi.org/10.1002/9781118753491.

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Huff, H. R., and D. C. Gilmer, eds. High Dielectric Constant Materials. Berlin, Heidelberg: Springer Berlin Heidelberg, 2005. http://dx.doi.org/10.1007/b137574.

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Von Hippel, Arthur R. 1898-, ed. Dielectric materials and applications. Boston: Artech House, 1995.

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Mikhail, Baklanov, Green Martin, and Maex Karen, eds. Dielectric films for advanced microelectronics. Chichester, England: John Wiley & Sons, 2007.

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(Firm), Knovel, and ScienceDirect (Online service), eds. Dielectric materials for wireless communication. Amsterdam: Elsevier, 2008.

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Martinez-Vega, Juan, ed. Dielectric Materials for Electrical Engineering. Hoboken, NJ USA: John Wiley & Sons, Inc., 2013. http://dx.doi.org/10.1002/9781118557419.

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Book chapters on the topic "Dielectric Materials"

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Matsushita, Teruo. "Dielectric Materials." In Electricity and Magnetism, 75–97. Tokyo: Springer Japan, 2013. http://dx.doi.org/10.1007/978-4-431-54526-2_4.

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Gupta, Tapan. "Dielectric Materials." In Copper Interconnect Technology, 67–110. New York, NY: Springer New York, 2009. http://dx.doi.org/10.1007/978-1-4419-0076-0_2.

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Kern, Werner. "Dielectric Materials." In Microelectronic Materials and Processes, 247–73. Dordrecht: Springer Netherlands, 1989. http://dx.doi.org/10.1007/978-94-009-0917-5_6.

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Matsushita, Teruo. "Dielectric Materials." In Electricity and Magnetism, 89–118. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-82150-0_4.

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Kantorovich, Lev. "Dielectric materials." In Quantum Theory of the Solid State: An Introduction, 421–69. Dordrecht: Springer Netherlands, 2004. http://dx.doi.org/10.1007/978-1-4020-2154-1_8.

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Hill, Robert M. "Dielectric Properties and Materials." In Electronic Materials, 253–65. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3818-9_17.

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Imai, Takahiro. "Special Considerations for Clay-Based Materials." In Dielectric Polymer Nanocomposites, 65–93. Boston, MA: Springer US, 2009. http://dx.doi.org/10.1007/978-1-4419-1590-0_3.

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Imai, Takahiro. "Special Considerations for Clay-Based Materials." In Dielectric Polymer Nanocomposites, 65–93. Boston, MA: Springer US, 2009. http://dx.doi.org/10.1007/978-1-4419-1591-7_3.

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Varghese, J., and M. T. Sebastian. "Dielectric Inks." In Microwave Materials and Applications 2V Set, 457–80. Chichester, UK: John Wiley & Sons, Ltd, 2017. http://dx.doi.org/10.1002/9781119208549.ch10.

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Wallace, Robert M. "Dielectric Materials for Microelectronics." In Springer Handbook of Electronic and Photonic Materials, 1. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-48933-9_27.

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Conference papers on the topic "Dielectric Materials"

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Kohl, Paul A., and Sue Ann Bidstrup Allen. "Nano-Micro Scale Characterization of Dielectric Materials." In ASME 2001 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2001. http://dx.doi.org/10.1115/imece2001/epp-24707.

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Abstract Thin films of dielectric materials are used as insulating layers in microelectronic systems, including integrated circuits and printed circuit boards. Polymer and spin-on-glasses are widely used as coatings and interlevel dielectrics. The dielectric permitivity and loss are the electrical properties of most interest. However, characterization and optimization of the mechanical properties is essential to the successful implementation and usage of these insulators. In this presentation, thin-film structures for measuring direction-dependent properties (dielectric constant, elastic modulus, and coefficient of thermal expansion), and nano-indentation results on spin-on-glass materials will be presented. Significant improvement in the fracture toughness of nanoporous methylsilsesquioxane glass films has been demonstrated upon introduction of porosity into the films.
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Cao, Yang, Qin Chen, Daniel Qi Tan, and Patricia C. Irwin. "Nanostructured dielectric materials." In 2010 10th IEEE International Conference on Solid Dielectrics (ICSD). IEEE, 2010. http://dx.doi.org/10.1109/icsd.2010.5568104.

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Rodrigues, F. F., J. C. Pascoa, and M. Trancossi. "Experimental Analysis of Alternative Dielectric Materials for DBD Plasma Actuators." In ASME 2018 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2018. http://dx.doi.org/10.1115/imece2018-87455.

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Dielectric Barrier Discharge plasma actuators are simple devices with great potential for active flow control applications. They have very interesting features which have made them a topic of interest for many researchers, for instance they present very low mass, fast response time, low cost, easy implementation and they are fully electronic with no moving parts. The dielectric material used in the construction of these devices present an important role in their performance. The variety of dielectrics studied in the literature is very restrict and the majority of the authors make use of Kapton, Teflon, Macor ceramic or PMMA. Furthermore, several authors reported difficulties in the durability of the dielectric layer when actuators operate at high levels of voltage and frequency. Considering this background, the present study focus on the experimental testing of alternative dielectric materials which can be used for DBD plasma actuators fabrication. Considering this, plasma actuators with dielectric layers made of Poly-Isobutylene rubber, Poly-Lactic acid and Acetoxy Silicon were experimentally tested. Although these dielectric materials are not commonly used in plasma actuators, their values of dielectric strength and dielectric permittivity indicate they can be good solutions. The plasma actuators facbricated with these alternative dielectric materials were experimentally analysed in terms of electrical characteristics and induced flow velocity, and the obtained results were compared with an actuator made of Kapton which is, currently, the most common dielectric material for plasma actuators. The effectiveness of the actuators was estimated and the advantages and disadvantages of the use of each dielectric material were discussed.
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"Biodielectric materials, new and functional dielectric and electronic materials, eco-friendly dielectric materials and recycling." In Proceedings of 2005 International Symposium on Electrical Insulating Materials, 2005. (ISEIM 2005). IEEE, 2005. http://dx.doi.org/10.1109/iseim.2005.193485.

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Opris, Dorina, Martin Molberg, Christiane Lo¨we, Frank Nu¨esch, Christopher Plummer, and Yves Leterrier. "Improved Materials for Dielectric Elastomer Actuators." In ASME 2008 9th Biennial Conference on Engineering Systems Design and Analysis. ASMEDC, 2008. http://dx.doi.org/10.1115/esda2008-59193.

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Dielectric elastomers are an emerging class of electroactive polymers for electromechanical transduction. A broad application of dielectric elastomer actuators (DEA) is limited by the high voltage necessary to drive such devices. The development of novel elastomers offering better intrinsic electromechanical properties is one way to solve the problem. Therefore we prepared composites from thermoplastic or thermoset silicone elastomers and organic fillers as phthalocyanines or doped polyaniline (PANI). We studied the mechanical properties of silicones, synthesized, modified and characterized phthalocyanines and doped PANI. The influence of humidity onto the dielectric properties of CuPc(COOH)8 and ZnPc(COOH)8 was analyzed in detail. First measurements of silicone/PANI blends results in a hundredfold increase for the dielectric constant and an electromechanically strain of 8.5%.
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Kutsenko, V. P., U. A. Skripnik, N. F. Tregubov, K. L. Shevchenko, and A. F. Yanenko. "Radiometric survey of dielectric materials." In 2010 20th International Crimean Conference "Microwave & Telecommunication Technology" (CriMiCo 2010). IEEE, 2010. http://dx.doi.org/10.1109/crmico.2010.5632771.

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Sommer-Larsen, Peter, and Anne L. Larsen. "Materials for dielectric elastomer actuators." In Smart Structures and Materials, edited by Yoseph Bar-Cohen. SPIE, 2004. http://dx.doi.org/10.1117/12.539500.

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Cheng, Pengfei, Hanchen Liu, Lixun Song, and Caijuan Xia. "Dielectric response of CaCu3Ti4O12 materials." In 2011 Second International Conference on Mechanic Automation and Control Engineering. IEEE, 2011. http://dx.doi.org/10.1109/mace.2011.5988735.

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Opris, Dorina M., Jose Enrico Q. Quinsaat, Simon Dünki, Yee Song Ko, Mihaela Alexandru, Carmen Racles, and Frank A. Nüesch. "Dielectric materials, design and realization." In SPIE Smart Structures and Materials + Nondestructive Evaluation and Health Monitoring, edited by Yoseph Bar-Cohen. SPIE, 2015. http://dx.doi.org/10.1117/12.2086134.

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Struempler, Ralf G., Jakob Rhyner, Felix Greuter, and Petra Kluge-Weiss. "Nonlinear dielectric composites." In Smart Structures & Materials '95, edited by A. Peter Jardine. SPIE, 1995. http://dx.doi.org/10.1117/12.209804.

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Reports on the topic "Dielectric Materials"

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Geyer, Richard G. Dielectric characterization and reference materials. Gaithersburg, MD: National Institute of Standards and Technology, 1990. http://dx.doi.org/10.6028/nist.tn.1338.

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Medina, Richard, John Penn, and Richard Albanese. Dielectric Response Data on Materials of Military Consequence. Fort Belvoir, VA: Defense Technical Information Center, August 2002. http://dx.doi.org/10.21236/ada405996.

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Banks, H. T., and Gabriella A. Pinter. High Frequency Pulse Propagation in Nonlinear Dielectric Materials. Fort Belvoir, VA: Defense Technical Information Center, November 2003. http://dx.doi.org/10.21236/ada446718.

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Ueberall, Herbert. Dielectric Materials Containing Conducting Wires: Effect on Polarization. Fort Belvoir, VA: Defense Technical Information Center, December 1997. http://dx.doi.org/10.21236/ada336531.

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Gandy, Jonathan W. Characterization of Micron-Scale Nanotublar Super Dielectric Materials. Fort Belvoir, VA: Defense Technical Information Center, September 2015. http://dx.doi.org/10.21236/ad1008933.

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Author, Not Given. Advanced Gate Dielectric Materials for Next-Generation Integrated Circuits. Office of Scientific and Technical Information (OSTI), October 2018. http://dx.doi.org/10.2172/1483866.

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Cuddihy, E. F. Concept for the intrinsic dielectric strength of electrical insulation materials. Office of Scientific and Technical Information (OSTI), April 1985. http://dx.doi.org/10.2172/5633930.

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Baker-Jarvis, James. Dielectric and conductor-loss characterization and measurements on electronic packaging materials. Gaithersburg, MD: National Bureau of Standards, 2001. http://dx.doi.org/10.6028/nist.tn.1520.

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Duke, J. R. Jr, P. G. Apen, and M. Hoisington. Development of structural materials exhibiting dielectric and magnetic loss at radio frequencies. Office of Scientific and Technical Information (OSTI), October 1996. http://dx.doi.org/10.2172/380369.

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Baker-Jarvis, James. Dielectric and magnetic properties of printed wiring boards and other substrate materials. Gaithersburg, MD: National Bureau of Standards, 1999. http://dx.doi.org/10.6028/nist.tn.1512.

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