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Dissertations / Theses on the topic 'Dielectrics'

Author: Grafiati

Published: 4 June 2021

Last updated: 25 July 2025

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1

Fromille, Samuel S. IV. "Novel Concept for High Dielectric Constant Composite Electrolyte Dielectrics." Thesis, Monterey, California. Naval Postgraduate School, 2013. http://hdl.handle.net/10945/53408.

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Approved for public release<br>This research was part of an ongoing program studying the concept of multi-material dielectrics (MMD) with dielectric constants much higher than homogenous materials. MMD described in this study have dielectric constants six orders of magnitude greater than the best single materials. This is achieved by mixing conductive particles with an insulating surface layer into a composite matrix phase composed of high surface area ceramic powder and aqueous electrolyte. Specifically examined in this study was micron-scale nickel powder treated in hydrogen peroxide (H2O2)

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2

Grove, Nicole R. "Characterization of functionalized polynorbornenes as interlevel dielectrics." Diss., Georgia Institute of Technology, 1997. http://hdl.handle.net/1853/11204.

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3

Balu, Venkatasubramani. "Barium strontium titanate thin film capacitors for high-density memories /." Digital version accessible at:, 1999. http://wwwlib.umi.com/cr/utexas/main.

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4

Hu, Chuan. "Study of the thermal properties of low k dielectric thin films /." Full text (PDF) from UMI/Dissertation Abstracts International, 2000. http://wwwlib.umi.com/cr/utexas/fullcit?p9992820.

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5

Duong, Danny. "The complex dielectric properties of aqueous ammonia from 2 GHz - 8.5 GHz in support of the NASA Juno mission." Thesis, Georgia Institute of Technology, 2011. http://hdl.handle.net/1853/42891.

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A new model for the complex dielectric constant, ε, of aqueous ammonia (NH4OH) has been developed based on laboratory measurements in the frequency range between 2-8.5 GHz for ammonia concentrations of 0-8.5 %NH3/volume and temperatures between 277-297 K. The new model has been validated for temperatures up to 313 K, but may be consistently extrapolated up to 475 K and ammonia concentrations up to 20 %NH3/volume. The model fits 60.26 % of all laboratory measurements within 2σ uncertainty. The new model is identical to the Meissner and Wentz (2004) model of the complex dielectric constant of pu

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6

Cicerrella, Elizabeth. "Dielectric functions and optical bandgaps of high-K dielectrics by far ultraviolet spectroscopic ellipsometry /." Full text open access at:, 2006. http://content.ohsu.edu/u?/etd,2.

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7

Cho, Taiheui. "Anisotropy of low dielectric constant materials and reliability of Cu/low-k interconnects /." Digital version accessible at:, 2000. http://wwwlib.umi.com/cr/utexas/main.

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8

Ahchawarattaworn, Jutharat. "Perovskite oxynitride dielectrics." Thesis, University of Newcastle Upon Tyne, 2011. http://hdl.handle.net/10443/1186.

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The synthesis, crystal structures and dielectric properties of perovskite oxynitrides of the type LnTiO2N (Ln = La, Nd and mixtures) and ATaO2N (A = Ca, Sr, Ba and mixtures), have been investigated. The end-member oxynitrides and their associated LaxNd1-xTiO2N, CaxSr1-xTaO2N and BaxSr1-xTaO2N solid solutions were successfully prepared by ammonolysis of the appropriate precursor oxides at temperatures in the range 900-1200ºC. The complete range of LaxNd1-xTiO2N solid solution are orthorhombic perovskites, which show a small increase in unit cell parameters with increasing La content across the

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9

Saura, Mas Xavier. "Filamentos conductores de ruptura dieléctrica en aislantes delgados." Doctoral thesis, Universitat Autònoma de Barcelona, 2014. http://hdl.handle.net/10803/285732.

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La industria micro y nanoelectrónica requiere de múltiples líneas de investigación para la introducción de continuas mejoras en los dispositivos en términos de rendimiento, funcionalidad y escalabilidad. Una de estas mejoras se centra en la idea de utilizar el fenómeno de la ruptura dieléctrica como principio de operación de dispositivos electrónicos. Esta idea ha generado mucho interés recientemente, especialmente en el campo de las memorias no volátiles. Así, la investigación realizada a lo largo de esta tesis doctoral gira en torno a la ruptura dieléctrica de óxidos de alta permitividad y

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10

Cousins, Jesse. "Simulation of the Variability in Microelectronic Capacitors having Polycrystalline Dielectrics with Columnar Microstructure." Fogler Library, University of Maine, 2003. http://www.library.umaine.edu/theses/pdf/CousinsJL2003.pdf.

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11

Bae, Choelhwyi. "GaN-dielectric interface formation for gate dielectrics and passivation layers using remote plasma processing." NCSU, 2003. http://www.lib.ncsu.edu/theses/available/etd-05082003-023332/.

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In previous studies, device quality Si-SiO2 interfaces and dielectric bulk films (SiO2) were prepared using a two-step process; i) remote plasma-assisted oxidation (RPAO) to form a superficially interfacial oxide (~0.6 nm) and ii) remote plasma enhanced chemical vapor deposition (RPECVD) to deposit the oxide film. The same approach has been applied to the GaN-SiO2 system. After a 300 oC remote N2/He plasma treatment of the GaN surface, residual C and Cl were reduced below Auger electron spectroscopy (AES) detection, and the AES peak ratio of O KLL and N KLL was ~0.06 or ~0.1 monolayer of oxyge

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12

Tavassolian, Negar. "Dielectric charging in capacitive RF MEMS switches with silicon nitride and silicon dioxide." Diss., Georgia Institute of Technology, 2011. http://hdl.handle.net/1853/39504.

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Capacitive radio frequency (RF) micro-electromechanical (MEMS) switches are among the most promising applications in MEMS systems. They have been introduced in the last 15-20 years as a practical alternative over traditional semiconductor switches. Low-cost RF MEMS switches are prime candidates for replacing the conventional GaAs Field Effect Transistors (FET) and pin diode switches in RF and microwave communication systems, mainly due to their low insertion loss, good isolation, linear characteristic and low power consumption. Unfortunately, their commercialization is currently hindered by re

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13

Kleemann, Tobias A. "An investigation into solid dielectrics." Thesis, University of Southampton, 2012. https://eprints.soton.ac.uk/346911/.

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Direct measurement techniques for the investigation of electrical processes in solid dielectrics are reviewed and their respective strengths and weaknesses are discussed, particularly the complementary nature of thermally stimulated current measurements. The successful design and construction of a new Thermally Stimulated Discharge Current (TSDC) Spectrometer at the University of Southampton is presented and its correct function validated with experimental measurements of the well known and often characterized synthetic polymers low density polyethylene (LDPE) and polyethylene terephtalate (PE

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14

Addington, J. Shawn. "Wideband electrical characterization of multilayer low-loss dielectric materials." Thesis, This resource online, 1992. http://scholar.lib.vt.edu/theses/available/etd-10312009-020154/.

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15

Hasegawa, Keisuke. "The effect of geometry and surface morphology on the optical properties of metal-dielectric systems /." Connect to title online (Scholars' Bank) Connect to title online (ProQuest), 2008. http://hdl.handle.net/1794/8581.

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Thesis (Ph. D.)--University of Oregon, 2008.<br>Typescript. Includes vita and abstract. Includes bibliographical references (leaves 127-133). Also available online in Scholars' Bank; and in ProQuest, free to University of Oregon users.

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16

Hare, Richard W. "Modelling space charge in solid dielectrics." Thesis, University of Bristol, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.482030.

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17

Lu, Yi. "High-k dielectrics for CMOS application." Thesis, University of Liverpool, 2006. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.437492.

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18

Tear, Gareth Richard. "Shock properties of homogeneous anisotropic dielectrics." Thesis, Imperial College London, 2016. http://hdl.handle.net/10044/1/53828.

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Anisotropy, the directional dependence of a physical quantity, is present in numerous physical processes involved in the shock compression of solid materials. The effect that a particular property’s anisotropy has on the propagation of a shock wave is obscured by other effects such as those from strain rate and material heterogeneity. Recent studies have focussed on single- and bi-crystal metals to understand the effect of crystal anisotropy on the mechanics of shock wave propagation. This thesis extends this work to optically transparent non-metallic dielectric single crystals by developing a

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19

Murad, S. N. A. "High-ĸ gate dielectrics on germanium." Thesis, Queen's University Belfast, 2014. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.680229.

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Germanium is an attractive channel material for MOSFETs because of its higher mobility than silicon. Ge02 has been investigated as an interfacial layer for high-K gate stacks on germanium. Thermally grown Ge02 layers have been prepared at 550°C to minimize GeO volatilization. Ge02 growth has been performed in both pure O2 ambient and O2 diluted with N2. Ge02 thickness has been scaled down to approximately 3 nm. This is the first time ever Ge02 has been scaled using dilution method. MOS capacitors have been fabricated using Ge02 grown in various ambient and different thicknesses with a standard

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20

Truong, L. H. "Dielectrics for high temperature superconducting applications." Thesis, University of Southampton, 2013. https://eprints.soton.ac.uk/355538/.

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This thesis is concerned with the development of condition monitoring for future design of high temperature superconducting (HTS) power apparatus. In particular, the use of UHF sensing for detecting PD activity within HTS has been investigated. Obtained results indicate that fast current pulses during PD in LN2 radiate electromagnetic waves which can be captured by the UHF sensor. PD during a negative streamer in LN2 appears in the form of a series of pulses less than 1 μs apart. This sequence cannot be observed using conventional detection method due to its bandwidth limitation. Instead, a sl

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21

Blanchard, John L. "Integral equation analysis of artificial dielectrics." The Ohio State University, 1991. http://rave.ohiolink.edu/etdc/view?acc_num=osu1314649696.

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22

Mathew, Anoop. "Interfacial phenomena in high-kappa dielectrics." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 118 p, 2009. http://proquest.umi.com/pqdweb?did=1654501721&sid=4&Fmt=2&clientId=8331&RQT=309&VName=PQD.

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23

Jan, Saeed Ullah. "Dielectrics for high temperature capacitors applications." Thesis, University of Leeds, 2015. http://etheses.whiterose.ac.uk/11528/.

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Most of the dielectric materials developed in this thesis were relaxor dielectrics with very broad, frequency dependent peaks in relative permittivity-temperature, εr – T, plots. In some cases, plateau-like permittivity plots with very wide temperature ranges of stable permittivity varying by no more than ±15 % were obtained through compositional engineering of the relaxor base material using high levels of lattice substitution of cations of different charge and size to the host lattice. The solid solution series (1–x)Na0.5Bi0.5TiO3 – xBa0.8Ca0.2TiO3 [(1–x)NBT–xBCT] was studied initially: it s

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24

Xu, Yifan. "Studies on field effect transistors with conjugated polymer and high permittivity gate dielectrics using pulsed plasma polymerization." Connect to resource, 2005. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1124219179.

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Thesis (Ph. D.)--Ohio State University, 2005.<br>Title from first page of PDF file. Document formatted into pages; contains xx, 187 p.; also includes graphics (some col.). Includes bibliographical references (p. 174-187). Available online via OhioLINK's ETD Center

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25

Pothukuchi, Suresh V. "Development of a polymer-metal nanocomposite dielectric by in situ reduction for embedded capacitor application." Thesis, Available online, Georgia Institute of Technology, 2004:, 2003. http://etd.gatech.edu/theses/available/etd-04072004-180141/unrestricted/pothukuchi%5Fsuresh%5Fv%5F200312%5Fms.pdf.

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26

Yang, Fan. "Characterization of HFO2 Capacitors." Fogler Library, University of Maine, 2003. http://www.library.umaine.edu/theses/pdf/YangF2003.pdf.

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27

Taechakumput, Pouvanart. "Novel high-K dielectrics for MOS applications." Thesis, University of Liverpool, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.490807.

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The ever increasing demand for improved performance of silicon based microelectronics, at a lower cost, has resulted in an aggressive reduction, or scaling, in the dimensions of the metal-oxide-semiconductor field effect transistors (MOSFET) in integrated circuits (IC). Silicon oxynitride-based gate dielectrics (SiON) have been u~ed in MOSFETs, due to their stable high quality interface with the silicon channel and excellent electrical isolation properties. However, the transistor feature size the gate dielectric has recently been reduced to the point where direct electron tunnelling effects a

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28

McElcheran, Clare. "Understanding Femtosecond Laser Modification of Bulk Dielectrics." Thesis, University of Ottawa (Canada), 2009. http://hdl.handle.net/10393/28633.

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The minimum spacing of a plasma waveguide was calculated and applied to the formation of periodic nanocracks. The minimum spacing decreased with decreasing plasma frequency but was found to have limited effect on the spacing of the nanocracks. An extension to a standard Finite-Difference Time-Domain method was created to include nonlinear processes and the dynamic build up of the electron plasma. The ionized area produced in the simulation agrees with experiment. The existence of a self-limited absorption effect on a Gaussian pulse in time was verified in the simulations. The region was elonga

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29

Chambers, James Joseph. "REACTIONS FOR YTTRIUM SILICATE HIGH-K DIELECTRICS." NCSU, 2000. http://www.lib.ncsu.edu/theses/available/etd-20000721-183205.

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<p>CHAMBERS, JAMES JOSEPH. Reactions for Yttrium SilicateHigh-k Dielectrics. (Under the advisement of Dr. GregoryN. Parsons.)The continued scaling of metal-oxide-semiconductor-field-effect-transistors (MOSFETs) will require replacing the silicon dioxide gate dielectric with an alternate high dielectric constant (high-k) material. We have exploited the high reactivity of yttrium with both silicon and oxygen to form yttrium silicate high-k dielectrics. Yttrium silicate films with composition of (Y)<SUB>1-x</SUB> and x = 0.32 to 0.87 are formed by oxidizing yttrium on silicon where yttrium reacts

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30

Wubs, Cornelis Martijn. "Quantum optics and multiple scattering in dielectrics." [S.l : Amsterdam : s.n.] ; Universiteit van Amsterdam [Host], 2003. http://dare.uva.nl/document/70167.

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31

Farnsworth, Kimberly Dawn Richards. "Variable frequency microwave curing of polymer dielectrics." Diss., Georgia Institute of Technology, 1999. http://hdl.handle.net/1853/10928.

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32

Jubber, Michael G. "Laser production of patterned interconnects and dielectrics." Thesis, Heriot-Watt University, 1991. http://hdl.handle.net/10399/825.

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33

Bugler-Lamb, Samuel Lloyd. "The quantum vacuum near time-dependent dielectrics." Thesis, University of Exeter, 2017. http://hdl.handle.net/10871/29879.

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The vacuum, as described by Quantum Field Theory, is not as empty as classical physics once led us to believe. In fact, it is characterised by an infinite energy stored in the ground state of its constituent fields. This infinite energy has real, tangible effects on the macroscopic clusters of matter that make up our universe. Moreover, the configuration of these clusters of matter within the vacuum in turn influences the form of the vacuum itself and so forth. In this work, we shall consider the changes to the quantum vacuum brought about by the presence of time-dependent dielectrics. Such ch

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34

Zhang, Xuewei. "Keer electro-optic measurements in liquid dielectrics." Thesis, Massachusetts Institute of Technology, 2014. http://hdl.handle.net/1721.1/91035.

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Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2014.<br>This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.<br>Cataloged from student-submitted PDF version of thesis.<br>Includes bibliographical references.<br>Kerr electro-optic technique has been used to measure the electric field distribution in high voltage stressed dielectric liquids, where the difference between refractive indices for light polarized parallel and perpendicular to

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35

Althobaiti, Mohammed. "Characterization of high-κ dielectrics on germanium". Thesis, University of Liverpool, 2016. http://livrepository.liverpool.ac.uk/2009749/.

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This study explores and describes the interface properties of various high-k materials deposited on the Ge substrate. Deposition/ growth of these material films has been achieved using multiple techniques such as atomic layer deposition (ALD), molecular beam epitaxy and thermal growth. High dielectrics (k) materials based on metal (4d and 5d) such as Y2O3, ZrO2, HfO2, Ta2O5, and from the lanthanide series, La2O3 and Tm2O3 were deposited on germanium and characterized to find out interface quality and band offset between Ge substrate and the oxides. Additionally, Al2O3 was considered, both as a

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36

Ali, Rizwan. "Resistive Switching in Porous Low-k Dielectrics." Thesis, Virginia Tech, 2018. http://hdl.handle.net/10919/83462.

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Integrating nanometer-sized pores into low-k ILD films is one of the approaches to lower the RC signal delay and thus help sustain the continued scaling of microelectronic devices. While increasing porosity of porous dielectrics lowers the dielectric constant (k), it also creates many reliability and implementation issues. One of the problems is the little understood metal ion diffusion and drift in porous media. Here, we present a rigorous simulation method of Cu diffusion based on Master equation with elementary jump probabilities within the contiguous dielectric film, along the pore boundar

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37

Kramer, Bradley Allen. "Spiral antenna miniaturization with high-contrast dielectrics." The Ohio State University, 2004. http://rave.ohiolink.edu/etdc/view?acc_num=osu1407225517.

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38

Dubov, Mykhaylo. "Direct femtosecond laser inscription in transparent dielectrics." Thesis, Aston University, 2011. http://publications.aston.ac.uk/18274/.

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Since 1996 direct femtosecond inscription in transparent dielectrics has become the subject of intensive research. This enabling technology significantly expands the technological boundaries for direct fabrication of 3D structures in a wide variety of materials. It allows modification of non-photosensitive materials, which opens the door to numerous practical applications. In this work we explored the direct femtosecond inscription of waveguides and demonstrated at least one order of magnitude enhancement in the most critical parameter - the induced contrast of the refractive index in a standa

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39

Branch, Greg. "Nonlinear pulsed power technology." Thesis, University of Oxford, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.386897.

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40

Afshar-Hanaii, Nasser. "Some aspects of submicron CMOS technology." Thesis, University of Southampton, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.358782.

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41

Espinosa, James Charles. "Dielectric breakdown of water /." Full text (PDF) from UMI/Dissertation Abstracts International, 2000. http://wwwlib.umi.com/cr/utexas/fullcit?p3004261.

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42

Ukirde, Vaishali. "Evaluation of hydrogen trapping in HfO2 high-κ dielectric thin films". Thesis, University of North Texas, 2006. https://digital.library.unt.edu/ark:/67531/metadc5596/.

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Hafnium based high-κ dielectrics are considered potential candidates to replace SiO2 or SiON as the gate dielectric in complementary metal oxide semiconductor (CMOS) devices. Hydrogen is one of the most significant elements in semiconductor technology because of its pervasiveness in various deposition and optimization processes of electronic structures. Therefore, it is important to understand the properties and behavior of hydrogen in semiconductors with the final aim of controlling and using hydrogen to improve electronic performance of electronic structures. Trap transformations under annea

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43

Rotaru, Andrei. "Novel polar dielectrics with the tetragonal tungsten bronze structure." Thesis, University of St Andrews, 2013. http://hdl.handle.net/10023/4184.

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There is great interest in the development of new polar dielectric ceramics and multiferroic materials with new and improved properties. A family of tetragonal tungsten bronze (TTB) relaxors of composition Ba₆M³⁺Nb₉O₃₀ (M³⁺ = Ga³⁺, Sc³⁺ and In³⁺, and also their solid solutions) were studied in an attempt to understand their dielectric properties to enable design of novel polar TTB materials. A combination of electrical measurements (dielectric and impedance spectroscopy) and powder diffraction (X-ray and neutron) studies as a function of temperature was employed for characterising the dynamic

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44

Quevedo-Lopez, Manuel Angel. "Materials properties of hafnium and zirconium silicates: Metal interdiffusion and dopant penetration studies." Thesis, University of North Texas, 2002. https://digital.library.unt.edu/ark:/67531/metadc3221/.

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Hafnium and Zirconium based gate dielectrics are considered potential candidates to replace SiO2 or SiON as the gate dielectric in CMOS processing. Furthermore, the addition of nitrogen into this pseudo-binary alloy has been shown to improve their thermal stability, electrical properties, and reduce dopant penetration. Because CMOS processing requires high temperature anneals (up to 1050 °C), it is important to understand the diffusion properties of any metal associated with the gate dielectric in silicon at these temperatures. In addition, dopant penetration from the doped polysilicon gate in

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45

Lupina, Grzegorz. "Praseodymium silicate high-k dielectrics on Si(001)." [S.l.] : [s.n.], 2006. http://se6.kobv.de:8000/btu/volltexte/2007/42.

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46

Hinkle, Christopher. "Fixed Charge Reduction and Tunneling in Stacked Dielectrics." NCSU, 2005. http://www.lib.ncsu.edu/theses/available/etd-07252005-181136/.

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Stacked gate dielectrics using high-k materials were deposited using a RPECVD method. Aluminum oxide, hafnium oxide, hafnium silicate, nitrided films of each of the above, and multi-layer stacks of the above as well as silicon dioxide were deposited. These films were analyzed using AES, XPS, NRA, RBS, SIMS, XAS, cathodoluminescence, spectroscopic ellipsometry, capacitance-voltage, and current-voltage techniques. Fixed charge was found to be present in all high-k films and was practically impossible to reduce in a significant way. Nitridation of the films was unsuccessful at reducing the charge

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47

Manepalli, Rahul Nagaraj. "Electron beam curing of thin film polymer dielectrics." Diss., Georgia Institute of Technology, 2000. http://hdl.handle.net/1853/11036.

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48

Brownlee, Kellee Renee. "Evaluation of low stress dielectrics for board applications." Thesis, Georgia Institute of Technology, 2002. http://hdl.handle.net/1853/20040.

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49

Winkler, Thomas Torsten [Verfasser]. "Laser amplification in excited dielectrics / Thomas Torsten Winkler." Kassel : Universitätsbibliothek Kassel, 2018. http://d-nb.info/1155438558/34.

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50

Kennedy, Gary Paul. "Gate dielectrics for ULSI produced by plasma anodisation." Thesis, University of Liverpool, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.240311.

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