Log in

Relevant bibliographies by topics / Dielectrics / Journal articles

To see the other types of publications on this topic, follow the link: Dielectrics.

Journal articles on the topic 'Dielectrics'

Author: Grafiati

Published: 4 June 2021

Last updated: 25 July 2025

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the top 50 journal articles for your research on the topic 'Dielectrics.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Browse journal articles on a wide variety of disciplines and organise your bibliography correctly.

1

Yang, Zhijie, Dong Yue, Yuanhang Yao, et al. "Energy Storage Application of All-Organic Polymer Dielectrics: A Review." Polymers 14, no. 6 (2022): 1160. http://dx.doi.org/10.3390/polym14061160.

Full text

Abstract:

With the wide application of energy storage equipment in modern electronic and electrical systems, developing polymer-based dielectric capacitors with high-power density and rapid charge and discharge capabilities has become important. However, there are significant challenges in synergistic optimization of conventional polymer-based composites, specifically in terms of their breakdown and dielectric properties. As the basis of dielectrics, all-organic polymers have become a research hotspot in recent years, showing broad development prospects in the fields of dielectric and energy storage. Th

APA, Harvard, Vancouver, ISO, and other styles

2

Shabgard, Mohammad Reza, Hossein Faraji, Behnam Khosrozade, Hadi Eivazi-Bagheri та Keivan Amini. "Study the Effects of Dielectric Type on the Machining Characteristics of γ-Ti Al in Electrical Discharge Machining". International Journal of Engineering Research in Africa 33 (листопад 2017): 40–49. http://dx.doi.org/10.4028/www.scientific.net/jera.33.40.

Full text

Abstract:

The current study surveys the results of using deionized water and kerosene as dielectrics in the machining outputs of γ-TiAl intermetallic compound obtained in electric discharge machining. Influences of these different dielectrics properties on machining speed, tool wear, surface cracks and roughness were compared. Scanning electron microscopy micrographs were prepared to investigate influences of dielectrics on the surface characteristics of electrically discharged samples. Results indicate which by kerosene dielectric; the material removal rate (MRR) is further compared to another one. But

APA, Harvard, Vancouver, ISO, and other styles

3

Gebremedhn, W. Wagaye. "Performance Investigation of Coaxial Cable with Transmission Line Parameters Based on Lossy Dielectric Medium." Indonesian Journal of Electrical Engineering and Computer Science 11, no. 2 (2018): 424–28. https://doi.org/10.11591/ijeecs.v11.i2.pp424-428.

Full text

Abstract:

This paper presents the analysis of high performance for coaxial cable with transmission line parameters. The modeling for performance of coaxial cable contains many parameters, in this paper will discuss the more effective parameter is the type of dielectric mediums. This analysis of the performance related to dielectric mediums with respect to dielectric losses and its effect upon cable properties, dielectrics versus characteristic impedance, and the attenuation in the coaxial line for different dielectrics. The analysis depends on a simple mathematical model for coaxial cables to test the i

APA, Harvard, Vancouver, ISO, and other styles

4

Li, Xuechen, Yuqi Ge, Wenjie Wan, et al. "Comparative study on atmospheric pressure helium barrier discharges with the planar dielectric surfaces and the wavy ones simulated by a fluid model." Physica Scripta 100, no. 7 (2025): 075602. https://doi.org/10.1088/1402-4896/addc49.

Full text

Abstract:

Abstract As a popular plasma source at atmospheric pressure, dielectric barrier discharge (DBD) has been extensively used in various application fields, which normally operates in a uniform mode or a filamentary mode depending on the experimental conditions. Previous studies revealed that the uniform mode transitions to the filamentary mode when one planar dielectric is replaced by a wavy dielectric [Plasma Process. Polym. 17 1900182 (2019)]. In their paper gap width varies for different positions along the radial directions. Hence, it is hard to know whether the surface morphology or the gap

APA, Harvard, Vancouver, ISO, and other styles

5

Singh, Rajenda, and Richard K. Ulrich. "High and Low Dielectric Constant Materials." Electrochemical Society Interface 8, no. 2 (1999): 26–30. http://dx.doi.org/10.1149/2.f06992if.

Full text

Abstract:

Silicon-based dielectrics (SiO2, Si3N4, SiOxNy etc.) have been widely used as the key dielectrics in the manufacturing of silicon integrated circuits (ICs) and virtually all other semiconductor devices. Dielectrics having a value of dielectric constant k × 8.854 F/cm more than that of silicon nitride (k > 7) are classified as high dielectric constant materials, while those with a value of k less than the dielectric constant of silicon dioxide (k < 3.9) are classified as the low dielectric constant materials. The minimum value of (k) is one for air. The highest value of k has been reporte

APA, Harvard, Vancouver, ISO, and other styles

6

Wagaye, Gebremedhn Wubet. "Performance Investigation of Coaxial Cable with Transmission Line Parameters Based on Lossy Dielectric Medium." Indonesian Journal of Electrical Engineering and Computer Science 11, no. 2 (2018): 424. http://dx.doi.org/10.11591/ijeecs.v11.i2.pp424-428.

Full text

Abstract:

<p>This paper presents the analysis of high performance for coaxial cable with transmission line parameters. The modeling for performance of coaxial cable contains many parameters, in this paper will discuss the more effective parameter is the type of dielectric mediums. This analysis of the performance related to dielectric mediums with respect to dielectric losses and its effect upon cable properties, dielectrics versus characteristic impedance, and the attenuation in the coaxial line for different dielectrics. The analysis depends on a simple mathematical model for coaxial cables to t

APA, Harvard, Vancouver, ISO, and other styles

7

Su, Yipin, Xudong Shen, Zinan Zhao, Bin Wu, and Weiqiu Chen. "Electromechanical Deformations and Bifurcations in Soft Dielectrics: A Review." Materials 17, no. 7 (2024): 1499. http://dx.doi.org/10.3390/ma17071499.

Full text

Abstract:

Dielectric elastomers have attracted considerable attention both from academia and industry alike over the last two decades due to their superior mechanical properties. In parallel, research on the mechanical properties of dielectrics has been steadily advancing, including the theoretical, experimental, and numerical aspects. It has been recognized that the electromechanical coupling property of dielectric materials can be utilized to drive deformations in functional devices in a more controllable and intelligent manner. This paper reviews recent advances in the theory of dielectrics, with spe

APA, Harvard, Vancouver, ISO, and other styles

8

Chi, Xiaohong, Wenfeng Liu, Shengtao Li, and Xiaohong Zhang. "The Effect of Humidity on Dielectric Properties of PP-Based Nano-Dielectric." Materials 12, no. 9 (2019): 1378. http://dx.doi.org/10.3390/ma12091378.

Full text

Abstract:

Nano-dielectrics are sensitive to humidity and easily degraded in damp environment because of the high surface energy of nanoparticles. In order to study the effect of humidity on the dielectric properties of nano-dielectric, polypropylene (PP) was modified by polyolefin elastomer (POE) and nano-SiO2, and the samples with obvious filling concentration were pre-selected by breakdown strength for damp aging. The aging experiments were carried out in different relative humidity. The dielectric properties of new, hygroscopic saturation and samples after drying were measured and analyzed. It is fou

APA, Harvard, Vancouver, ISO, and other styles

9

Wallace, Robert M., and Glen Wilk. "Alternative Gate Dielectrics for Microelectronics." MRS Bulletin 27, no. 3 (2002): 186–91. http://dx.doi.org/10.1557/mrs2002.70.

Full text

Abstract:

AbstractThis brief article sets the context for the March 2002 issue of MRS Bulletin focusing on Alternative Gate Dielectrics for Microelectronics. Contributors are several experts from industry and academia engaged in the search for manufacturable solutions for a suitable alternative gate dielectric to SiO2 using high-dielectric-constant (high-ĸ) materials. Issues discussed in the articles include thermodynamics criteria for materials selection, materials interactions in the construction of the transistor gate stack, characterization of alternative materials, determination of suitable band of

APA, Harvard, Vancouver, ISO, and other styles

10

Meza-Arroyo, Javier, and Rafael Ramírez-Bon. "Organic–Inorganic Hybrid Dielectric Layers for Low-Temperature Thin-Film Transistors Applications: Recent Developments and Perspectives." Technologies 13, no. 1 (2025): 20. https://doi.org/10.3390/technologies13010020.

Full text

Abstract:

This paper reviews the recent development of organic–inorganic hybrid dielectric materials for application as gate dielectrics in thin-film transistors (TFTs). These hybrid materials consist of the blending of high-k inorganic dielectrics with polymers, and their resulting properties depend on the amount and type of interactions between the organic and inorganic phases. The resulting amorphous networks, characterized by crosslinked organic and inorganic phases, can be tailored for specific applications, including gate dielectrics in TFTs. As dielectric materials, they offer a synergistic combi

APA, Harvard, Vancouver, ISO, and other styles

11

Huang, Jing-Kai, Yi Wan, Junjie Shi та ін. "(Invited, Digital Presentation) Heterogeneous Integration of Ultrahigh-Κ Single-Crystalline SrTiO₃ Membranes for Two-Dimensional Electronics". ECS Meeting Abstracts MA2022-02, № 36 (2022): 1315. http://dx.doi.org/10.1149/ma2022-02361315mtgabs.

Full text

Abstract:

Even though competitive 2D field-effect transistors (FETs) with the scaled channel dimensions have been demonstrated, it still is a challenge to integrate 2D semiconductors and high-κ dielectrics without deteriorating their interfaces, while decreasing capacitance equivalent thickness (CET) of dielectrics to maintain the gate controllability. In particular, the dielectric/channel interface is one of the predominant factors to affect device performance, including carrier mobility, switching behavior, and drifts of device parameters. This is often caused by the nature of dielectrics used, and th

APA, Harvard, Vancouver, ISO, and other styles

12

Gunawan, Vincensius. "The Lateral Surface Phonon Modes in Bi-layer Dielectrics with Different Values of Permittivity." International Journal of Scientific Research and Management (IJSRM) 12, no. 11 (2024): 96–99. http://dx.doi.org/10.18535/ijsrm/v12i011.pe01.

Full text

Abstract:

Surface phonon polaritons were electromagnetic waves that propagated at the surface of dielectrics. These polaritons had many attentions since the frequency can reach in the order of terahertz. Hence, it can be employ in terahertz technology. One of the general method to study polaritons was by solving Maxwell's equations. The results were dispersion relation which showed the characteristic of the polaritons. In this study, we analyze polaritons of a bilayer dielectric which was comprised of two dielectrics which had different permittivities. We set the thickness of each dielectric was smaller

APA, Harvard, Vancouver, ISO, and other styles

13

Bai, Xiran, Michael J. Jewell, Steve K. Lamoreaux, Reina H. Maruyama, and Karl van Bibber. "On the use of dielectric elements in axion searches with microwave resonant cavities." Journal of Instrumentation 18, no. 07 (2023): P07017. http://dx.doi.org/10.1088/1748-0221/18/07/p07017.

Full text

Abstract:

Abstract This study explores the primary effects of dielectric materials in a resonant cavity-based search for axion dark matter. While dielectrics prove beneficial in numerous cases, their incorporation may lead to less-than-optimal performance, especially for the lowest TM mode. Additionally, the stronger confinement of the electric field inside the dielectrics can exacerbate mode mixings, in particular for higher-order modes. Case studies have been carried out using a combination of analytical solutions and numerical simulations. The findings indicate dielectric cavities employing the TM010

APA, Harvard, Vancouver, ISO, and other styles

14

Choi, Junhwan, and Hocheon Yoo. "Combination of Polymer Gate Dielectric and Two-Dimensional Semiconductor for Emerging Field-Effect Transistors." Polymers 15, no. 6 (2023): 1395. http://dx.doi.org/10.3390/polym15061395.

Full text

Abstract:

Two-dimensional (2D) materials are considered attractive semiconducting layers for emerging field-effect transistors owing to their unique electronic and optoelectronic properties. Polymers have been utilized in combination with 2D semiconductors as gate dielectric layers in field-effect transistors (FETs). Despite their distinctive advantages, the applicability of polymer gate dielectric materials for 2D semiconductor FETs has rarely been discussed in a comprehensive manner. Therefore, this paper reviews recent progress relating to 2D semiconductor FETs based on a wide range of polymeric gate

APA, Harvard, Vancouver, ISO, and other styles

15

Biju, Anjitha, Maria Joseph, V. N. Archana, Navya Joseph, and M. R. Anantharaman. "High Dielectric Constant Liquid Dielectrics Based on Magnetic Nanofluids." Journal of Nanofluids 12, no. 4 (2023): 1141–50. http://dx.doi.org/10.1166/jon.2023.1973.

Full text

Abstract:

Magnetic nanofluids are increasingly finding new applications. They can be employed as liquid dielectrics. The advantage of having a liquid dielectric is that high dielectric constant can be achieved by a judicious choice of the base liquid. The dielectric constant can be tuned with the help of an external magnetic field too. Superparamagnetic iron oxide nanoparticles were dispersed in polar carriers, namely water, polyvinyl alcohol, ethylene glycol, and a nonpolar carrier like kerosene to obtain stable magnetic fluids after ensuring the crystallographic phase purity along with appropriate mag

APA, Harvard, Vancouver, ISO, and other styles

16

Булярский, С. В., В. С. Белов, Г. Г. Гусаров, А. В. Лакалин, К. И. Литвинова та А. П. Орлов. "Определение механизмов протекания тока в структурах из двух слоев диэлектриков". Физика и техника полупроводников 57, № 2 (2023): 122. http://dx.doi.org/10.21883/ftp.2023.02.55335.3545.

Full text

Abstract:

Diodes of type Metal-Dielectric 1-Dielectric 2-Metal are promising for use in devices paired with antennas-rectennas. To create diodes with the characteristics required for operation, it is necessary to understand the mechanisms of current transport in both dielectrics and their contacts with metals. To solve this problem, it is necessary to develop an algorithm for dividing the general current-voltage characteristic into characteristics of individual contacts, the analysis of which will also allow us to investigate the problems of the properties of defects in the dielectrics that make up the

APA, Harvard, Vancouver, ISO, and other styles

17

Shin, Jaemin, Tyafur Pathan, Guanyu Zhou, and Christopher L. Hinkle. "(Invited) Bulk Traps in Layered 2D Gate Dielectrics." ECS Transactions 113, no. 2 (2024): 25–33. http://dx.doi.org/10.1149/11302.0025ecst.

Full text

Abstract:

In this work, we synthesize new 2D layered dielectrics and fabricate metal-insulator-metal (MIM) capacitors to determine their viability for scaled gate dielectrics (ZrNCl, HfNCl, BiOCl, and Mg(OH)2) in transition metal dichalcogenide-based transistors. While successful synthesis and fabrication was demonstrated, the properties of the dielectrics were decidedly underwhelming for device applications. The dielectric constants, in most cases, were only marginally better than SiO2 (k = 4-6), the leakage currents were too high due to poor band offsets, and most importantly, the bulk trap density, a

APA, Harvard, Vancouver, ISO, and other styles

18

Gunawan, Vincensius. "Numerical study of vegetable oil as dielectric in the generation of surface plasmon polaritons in metal: The case of double interfaces." International Journal of Scientific Research and Management 10, no. 06 (2022): 16–19. http://dx.doi.org/10.18535/ijsrm/v10i6.p01.

Full text

Abstract:

Modified electromagnetic waves which is resulted from coupling of surface plasmon and initial electromagnetic waves are called surface plasmon polaritons (SPP). These type of polaritons are generated at the interface between metal and dielectric. Many studies are performed since SPP have potential application in many fields. The process of generating SPP was usually using dielectrics in the form of solid. However, the usage of liquid dielectric in generating SPP is very rare. In this study, we predict numerically the usage of liquid dielectrics by solving the dispersion relation of the SPP. Th

APA, Harvard, Vancouver, ISO, and other styles

19

Sathyakam, P. Uma, and Partha S. Mallick. "Future Dielectric Materials for CNT Interconnects - Possibilities and Challenges." Journal of Nano Research 52 (May 2018): 21–42. http://dx.doi.org/10.4028/www.scientific.net/jnanor.52.21.

Full text

Abstract:

Carbon nanotube (CNT) interconnects are emerging as the ultimate choice for next generation ultra large scale integrated (ULSI) circuits. Significant progress in precise growth of aligned CNTs and integration of multiwalled CNT interconnects into a test chip make them promising candidates for future nanoelectronic chips. Tremendous research efforts were made on silicon based ultra-low-k dielectrics for Cu interconnects, but, the most recent advancements in polymer based composites as dielectric materials open up fresh challenges in the use of low-k dielectrics for CNT interconnects. This paper

APA, Harvard, Vancouver, ISO, and other styles

20

Kim, Dae-Cheol, and Young-Geun Ha. "Self-Assembled Hybrid Gate Dielectrics for Ultralow Voltage of Organic Thin-Film Transistors." Journal of Nanoscience and Nanotechnology 21, no. 3 (2021): 1761–65. http://dx.doi.org/10.1166/jnn.2021.19083.

Full text

Abstract:

We developed self-assembled hybrid dielectric materials via a facile and low-temperature solution process. These dielectrics are used to facilitate ultralow operational voltage of organic thinfilm transistors. Self-assembly of bifunctional phosphonic acid and ultrathin hafnium oxide layers results in the self-assembled hybrid dielectrics. Additionally, the surface property of the top layer of hafnium oxide can be tuned by phosphonic acid-based self-assembled molecules to improve the function of the organic semiconductors. These novel hybrid dielectrics demonstrate great dielectric properties a

APA, Harvard, Vancouver, ISO, and other styles

21

Lee, Yih-Shing, Yu-Hsin Wang, Tsung-Cheng Tien, Tsung-Eong Hsieh, and Chun-Hung Lai. "Electrical Characteristics and Stability Improvement of Top-Gate In-Ga-Zn-O Thin-Film Transistors with Al2O3/TEOS Oxide Gate Dielectrics." Coatings 10, no. 12 (2020): 1146. http://dx.doi.org/10.3390/coatings10121146.

Full text

Abstract:

In this work, two stacked gate dielectrics of Al2O3/tetraethyl-orthosilicate (TEOS) oxide were deposited by using the equivalent capacitance with 100-nm thick TEOS oxide on the patterned InGaZnO layers to evaluate the electrical characteristics and stability improvement of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) devices, including positive bias stress (PBS) and negative bias stress (NBS) tests. Three different kinds of gate dielectrics (Al2O3, TEOS, Al2O3/TEOS) were used to fabricate four types of devices, differing by the gate dielectric, as well as its thick

APA, Harvard, Vancouver, ISO, and other styles

22

Sawa, G. "Dielectric Breakdown in Solid Dielectrics." IEEE Transactions on Electrical Insulation EI-21, no. 6 (1986): 841–46. http://dx.doi.org/10.1109/tei.1986.348991.

Full text

APA, Harvard, Vancouver, ISO, and other styles

23

Ling, H. C., M. F. Yan, and W. W. Rhodes. "High dielectric constant and small temperature coefficient bismuth-based dielectric compositions." Journal of Materials Research 5, no. 8 (1990): 1752–62. http://dx.doi.org/10.1557/jmr.1990.1752.

Full text

Abstract:

We have studied the crystal structure and the dielectric properties of a scries of Bi-based ceramic compositions as a function of compositional variation and sintering temperature. These dielectrics have dielectric constants hetween 70 and 165 and their temperature coefficients are within ±500 × 10−6/°C. The precise temperature coefficient can be controlled via compositional changes such that dielectrics with temperature coefficients within ±50 × 10−6/°C are easily obtainable. The room temperature dissipation factor is smaller than 0.001 or equivalently, the Q value is greater than 1000. The e

APA, Harvard, Vancouver, ISO, and other styles

24

Krishnan, Bharat, Hrishikesh Das, Yaroslav Koshka, Igor Sankin, P. A. Martin, and Michael S. Mazzola. "Process-Dependent Charges and Traps in Dielectrics on SiC." Materials Science Forum 527-529 (October 2006): 995–98. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.995.

Full text

Abstract:

Dielectric charges and charge stability were compared in different dielectrics formed on SiC by different processing techniques. The concentration and transient behavior of the interface and trapped charges were investigated. Strong hysteresis and flat-band voltage drift under applied bias were observed in some of the samples. They are attributed to the trapping of the charge injected in the dielectrics. Differences in charge injection, charge trapping, and capture/emission of carriers by interface traps were pronounced for the investigated SiO2 and Si3N4 dielectrics.

APA, Harvard, Vancouver, ISO, and other styles

25

MARACHEVSKY, VALERY N. "CASIMIR ENERGY AND REALISTIC MODEL OF DILUTE DIELECTRIC BALL." Modern Physics Letters A 16, no. 15 (2001): 1007–16. http://dx.doi.org/10.1142/s0217732301004078.

Full text

Abstract:

The Casimir energy of a dilute homogeneous nonmagnetic dielectric ball at zero temperature is derived analytically for the first time for an arbitrary physically possible frequency dispersion of dielectric permittivity ε(iω). A microscopic model of dielectrics is considered, divergences are absent in calculations because an average interatomic distance λ is a physical cutoff in the theory. This fact has been overlooked earlier, which led to divergences in various macroscopic approaches to the Casimir energy of connected dielectrics.

APA, Harvard, Vancouver, ISO, and other styles

26

Feng, Mengjia, Tiandong Zhang, Chunhui Song, et al. "Improved Energy Storage Performance of All-Organic Composite Dielectric via Constructing Sandwich Structure." Polymers 12, no. 9 (2020): 1972. http://dx.doi.org/10.3390/polym12091972.

Full text

Abstract:

Improving the energy storage density of dielectrics without sacrificing charge-discharge energy storage efficiency and reliability is crucial to the performance improvement of modern electrical and electronic systems, but traditional methods of doping high-dielectric ceramics cannot achieve high energy storage densities without sacrificing reliability and storage efficiency. Here, an all-organic energy storage dielectric composed of ferroelectric and linear polymer with a sandwich structure is proposed and successfully prepared by the electrostatic spinning method. Additionally, the effect of

APA, Harvard, Vancouver, ISO, and other styles

27

Irokawa, Yoshihiro, Mari Inoue, Toshihide Nabatame, and Yasuo Koide. "Comparison of Hydrogen-Induced Oxide Charges Among GaN Metal-Oxide-Semiconductor Capacitors with Al₂O₃, HfO₂, or Hf_0.57Si_0.43O_x Gate Dielectrics." ECS Journal of Solid State Science and Technology 11, no. 8 (2022): 085010. http://dx.doi.org/10.1149/2162-8777/ac8a70.

Full text

Abstract:

The effect of hydrogen on GaN metal-oxide-semiconductor (MOS) capacitors with Al2O3, HfO2, or Hf0.57Si0.43O x gate dielectrics was studied using capacitance–voltage (C–V) measurements. Hydrogen exposure shifted all the C–V curves toward the negative bias direction, and the hydrogen response of the devices was reversible. When the hydrogen-containing ambient atmosphere was changed to N2, the C–V characteristics were found to gradually revert to the initial values in N2. Application of a reverse gate bias accelerated the reversion compared with that in the absence of a bias, indicating that hydr

APA, Harvard, Vancouver, ISO, and other styles

28

Bulyarskiy S. V., Belov V. S., Gusarov G. G., Lakalin A.V., Litvinova K. I., and Orlov A. P. "Determining the mechanisms of current flow in structures of two-layer dielectrics." Semiconductors 57, no. 2 (2023): 124. http://dx.doi.org/10.21883/sc.2023.02.55958.3545.

Full text

Abstract:

Diodes of type Metal-Dielectric 1-Dielectric 2-Metal are promising for use in devices paired with antennas-rectennas. To create diodes with the characteristics required for operation, it is necessary to understand the mechanisms of current transport in both dielectrics and their contacts with metals. To solve this problem, it is necessary to develop an algorithm for dividing the general current-voltage characteristic into characteristics of individual contacts, the analysis of which will also allow us to investigate the problems of the properties of defects in the dielectrics that make up the

APA, Harvard, Vancouver, ISO, and other styles

29

Dmitrikov, Vladimir F., and Dmitry V. Shushpanov. "Equivalent circuit of a dielectric in a wide frequency range (0 Hz – 500 MHz)." Physics of Wave Processes and Radio Systems 25, no. 3 (2022): 43–57. http://dx.doi.org/10.18469/1810-3189.2022.25.3.43-57.

Full text

Abstract:

Based on the measured impedance of the dielectrics an equivalent high frequency (0 Hz - 500 MHz) circuit model was built. The equivalent circuit model was built taking into account the physical processes occurring in the dielectric. The attempt explaining why the frequency characteristics (modulus and phase) of the dielectric complex impedance have such a character in a wide frequency band (up to 500 MHz) was made. It was shown that for constructing an equivalent circuit model (structure and parameters), measuring only the dielectrics resistance modulus is not enough. It is also necessary to m

APA, Harvard, Vancouver, ISO, and other styles

30

Lakes, R. S. "Static and dynamic effects of chirality in dielectric media." Modern Physics Letters B 30, no. 24 (2016): 1650319. http://dx.doi.org/10.1142/s021798491650319x.

Full text

Abstract:

Chiral dielectrics are considered from the perspective of continuum representations of spatial heterogeneity. Static effects in isotropic chiral dielectrics are predicted, provided the electric field has nonzero third spatial derivatives. The effects are compared with static chiral phenomena in Cosserat elastic materials which obey generalized continuum constitutive equations. Dynamic monopole-like magnetic induction is predicted in chiral dielectric media.

APA, Harvard, Vancouver, ISO, and other styles

31

Gunawan, Vincensius. "The surface plasmon polaritons in metal which is immersed in vegetable oil: The effect of metal thickness." Journal of Physics: Conference Series 2498, no. 1 (2023): 012028. http://dx.doi.org/10.1088/1742-6596/2498/1/012028.

Full text

Abstract:

Abstract The liquid dielectrics have been widely used in transformer technology. However, there is very limited information in the usage of liquid dielectrics in optics, especially in generating surface plasmon polaritons (SPP) at the interface between conductor and dielectrics. In this study, we immersed conductor in liquid dielectrics and predicted the generation of SPP. Here, we used vegetable oils as liquid dielectric, since vegetable oil was relatively cheap and environment friendly. Using Maxwell equations and the continuity of the fields at the interface, the dispersion relation was der

APA, Harvard, Vancouver, ISO, and other styles

32

Schlom, Darrell G., and Jeffrey H. Haeni. "A Thermodynamic Approach to Selecting Alternative Gate Dielectrics." MRS Bulletin 27, no. 3 (2002): 198–204. http://dx.doi.org/10.1557/mrs2002.71.

Full text

Abstract:

AbstractAs a first step in the identification of suitable alternative gate dielectrics for metal oxide semiconductor field-effect transistors (MOSFETs), we have used tabulated thermodynamic data to comprehensively assess the thermodynamic stability of binary oxides and nitrides in contact with silicon at temperatures from 300 K to 1600 K. Sufficient data exist to conclude that the vast majority of binary oxides and nitrides are thermodynamically unstable in contact with silicon. The dielectrics that remain are candidate materials for alternative gate dielectrics. Of these remaining candidates,

APA, Harvard, Vancouver, ISO, and other styles

33

Sal, Bilal Abu. "Synthesis and Structural Properties of Nanocomposites Based on Synthetic Opals and Active Dielectrics." Applied Physics Research 12, no. 1 (2019): 19. http://dx.doi.org/10.5539/apr.v12n1p19.

Full text

Abstract:

This work is devoted to generalize and analyze the previouse results of new photonic-crystalline nanomaterials based on synthetic opals and active dielectrics. Data were characterized by X-ray diffraction and Raman spectroscopy. Active dielectrics infiltrated into the pores of the opal from the melt. The phase structure composition of the infiltrated materials into the pores of the opal matrix were analyzed. The results of x-ray diffraction and Raman spectra allowed to establish the crystal state of active dielectrics in the pores of the opal. The Raman spectra of some opal-active dielectric n

APA, Harvard, Vancouver, ISO, and other styles

34

Gunawan, Vincensius. "The Surface Plasmon Polaritons at the Metal which is Sandwiched between Two Different Dielectrics (Dielectric 1/ Metal/ Dielectric 2)." International Journal of Scientific Research and Management (IJSRM) 13, no. 06 (2025): 100–103. https://doi.org/10.18535/ijsrm/v13i06.pe01.

Full text

Abstract:

Electromagnetic waves that propagated at the interface between metal and dielectrics were widely known as surface plasmon polaritons (SPP). This type of polaritons attracted many people to study since the frequency was in the terahertz region. Hence, it can be utilized in the terahertz technology. The properties of polaritons were represented by dispersion relation. The method to derive the formulation of surface polaritons was by solving Maxwell's equations, then it was followed by analyzing continuity of the fields at the involved interfaces. The derived dispersion relation was solved numeri

APA, Harvard, Vancouver, ISO, and other styles

35

Tlhabologo, Bokang Agripa, Ravi Samikannu, and Modisa Mosalaosi. "Alternative liquid dielectrics in power transformer insulation: a review." Indonesian Journal of Electrical Engineering and Computer Science 23, no. 3 (2021): 1761. http://dx.doi.org/10.11591/ijeecs.v23.i3.pp1761-1777.

Full text

Abstract:

Transformer liquid dielectrics evolved where mineral oil has been the dominant choice until emergence of synthetic esters and natural esters. Natural ester-based oils have been under extensive investigations to enhance their properties for replacing petroleum-based mineral oil, which is non-biodegradable and has poor dielectric properties. This paper focuses on exposition of natural ester oil application in mixed transformer liquid dielectrics. Physical, chemical, electrical, and ageing characteristics of these dielectrics and the dissolved gas analysis (DGA) were reviewed. Physical properties

APA, Harvard, Vancouver, ISO, and other styles

36

Tlhabologo, Bokang Agripa, Ravi Samikannu, and Modisa Mosalaosi. "Alternative liquid dielectrics in power transformer insulation: a review." Indonesian Journal of Electrical Engineering and Computer Science 23, no. 3 (2021): 1761–77. https://doi.org/10.11591/ijeecs.v23.i3.pp1761-1777.

Full text

Abstract:

Transformer liquid dielectrics evolved where mineral oil has been the dominant choice until emergence of synthetic esters and natural esters. Natural ester-based oils have been under extensive investigations to enhance their properties for replacing petroleum-based mineral oil, which is nonbiodegradable and has poor dielectric properties. This paper focuses on exposition of natural ester oil application in mixed transformer liquid dielectrics. Physical, chemical, electrical, and ageing characteristics of these dielectrics and the dissolved gas analysis (DGA) were reviewed. Physical properties

APA, Harvard, Vancouver, ISO, and other styles

37

Liu, Chong, and Xiao Li Fan. "Methods to Improve Properties of Gate Dielectrics in Metal-Oxide-Semiconductor." Advanced Materials Research 463-464 (February 2012): 1341–45. http://dx.doi.org/10.4028/www.scientific.net/amr.463-464.1341.

Full text

Abstract:

This essay aims to introduce development of gate dielectrics. In present-day society, Si-based MOS has met its physical limitation. Scientists are trying to find a better material to reduce the thickness and dimension of MOS devices. While substrate materials are required to have a higher mobility, gate dielectrics are expected to have high k, low Dit and low leakage current. I conclude dielectrics in both Si-based and Ge-based MOS devices and several measures to improve the properties of these gate dielectric materials. I also introduce studies on process in our group and some achievements we

APA, Harvard, Vancouver, ISO, and other styles

38

Sun, Zhongheng. "Comparison and analysis of gate dielectrics for SiC MOSFET." Applied and Computational Engineering 23, no. 1 (2023): 223–29. http://dx.doi.org/10.54254/2755-2721/23/20230659.

Full text

Abstract:

SiC MOSFET has been widely used for its characteristics of lower on-off resistance, less switching loss, higher working frequency, and high-temperature resistance. With the scale down of Moore's Law, better gate dielectrics should be selected to improve the breakdown voltage and reduce the gate-drain current to ensure a good working mode of MOSFETs. The traditional gate dielectric is SiO2 but their dielectric constant is low and the interface characteristics at the junction of SiO2 and SiC are poor so various emerging materials have been created to replace the traditional SiO2. Emerging gate d

APA, Harvard, Vancouver, ISO, and other styles

39

Lo, Wai, Arvind Kamath, Shreyas Kher, Craig Metzner, Jianguo Wen, and Zhihao Chen. "Deposition and characterization of HfO2 high k dielectric films." Journal of Materials Research 19, no. 6 (2004): 1775–82. http://dx.doi.org/10.1557/jmr.2004.0247.

Full text

Abstract:

As the scaling of complementary metal-oxide-semiconductor (CMOS) transistors proceeds, the thickness of the SiO2 gate dielectrics shrinks rapidly and results in higher gate leakage currents. High k dielectric materials are acknowledged to be the possible solutions to this challenge, as their higher k values (e.g., 15–50) raise the physical thickness of the dielectrics that provide similar equivalent thickness of a thinner SiO2 film. In order for the high k materials to be applicable in CMOS devices, there should exist deposition technologies that can deposit highly uniform films over Si wafers

APA, Harvard, Vancouver, ISO, and other styles

40

Zhao, Cuijiao, Xiaonan Wei, Yawen Huang, et al. "Preparation and unique dielectric properties of nanoporous materials with well-controlled closed-nanopores." Physical Chemistry Chemical Physics 18, no. 28 (2016): 19183–93. http://dx.doi.org/10.1039/c6cp00465b.

Full text

Abstract:

Although general porous materials have a low dielectric constant, their uncontrollable opened porous structure results in high dielectric loss and poor barrier properties, thus limiting their application as interconnect dielectrics.

APA, Harvard, Vancouver, ISO, and other styles

41

Busch, Brett W., Olivier Pluchery, Yves J. Chabal, et al. "Materials Characterization of Alternative Gate Dielectrics." MRS Bulletin 27, no. 3 (2002): 206–11. http://dx.doi.org/10.1557/mrs2002.72.

Full text

Abstract:

AbstractContinued scaling of microelectronic devices is demanding that alternatives to SiO2 as the gate dielectric be developed soon. This in turn has placed enormous pressure on the abilities of physical characterization techniques to address critical issues such as film and interface structure and composition, transport properties, and thermal or chemical stability. This article summarizes the strengths and capabilities of four techniques used for the materials characterization of alternative gate dielectrics: scanning transmission electron microscopy (STEM) in conjunction with electron ener

APA, Harvard, Vancouver, ISO, and other styles

42

Dou, Lvye, Yuan-Hua Lin, and Ce-Wen Nan. "An Overview of Linear Dielectric Polymers and Their Nanocomposites for Energy Storage." Molecules 26, no. 20 (2021): 6148. http://dx.doi.org/10.3390/molecules26206148.

Full text

Abstract:

As one of the most important energy storage devices, dielectric capacitors have attracted increasing attention because of their ultrahigh power density, which allows them to play a critical role in many high-power electrical systems. To date, four typical dielectric materials have been widely studied, including ferroelectrics, relaxor ferroelectrics, anti-ferroelectrics, and linear dielectrics. Among these materials, linear dielectric polymers are attractive due to their significant advantages in breakdown strength and efficiency. However, the practical application of linear dielectrics is usu

APA, Harvard, Vancouver, ISO, and other styles

43

Li, He, Yao Zhou, Yang Liu, Li Li, Yi Liu, and Qing Wang. "Dielectric polymers for high-temperature capacitive energy storage." Chemical Society Reviews 50, no. 11 (2021): 6369–400. http://dx.doi.org/10.1039/d0cs00765j.

Full text

Abstract:

The growing demand for advanced electronics requires dielectrics operating at high temperatures. The development of high-temperature dielectric polymers is reviewed from the perspective of structure design, dielectric and capacitive performance.

APA, Harvard, Vancouver, ISO, and other styles

44

Wada, Masayuki, Sylvain Garaud, I. Ferain, et al. "Impact of Galvanic Corrosion on Metal Gate Stacks." Solid State Phenomena 145-146 (January 2009): 215–18. http://dx.doi.org/10.4028/www.scientific.net/ssp.145-146.215.

Full text

Abstract:

High-k gate dielectrics (HK), such as HfO2 or HfSiON, are being considered as the gate dielectric option for the 45nm node and beyond. In order to alleviate the Fermi-level pinning issue and to enhance the CET (Capacitive Effective Thickness) by generating the depletion layer in poly-Silicon gate, metal gate electrodes with proper work functions (WF) have to be used on the high-k dielectrics.

APA, Harvard, Vancouver, ISO, and other styles

45

Saito, Yoshito, Tomoyuki Nakamura, Kenichi Nada, Harunobu Sano, and Isao Sakaguchi. "Hydrogen migration in BaTiO₃-based dielectrics under high humidity and electric field bias." Applied Physics Express 15, no. 2 (2022): 021002. http://dx.doi.org/10.35848/1882-0786/ac481a.

Full text

Abstract:

Abstract This study investigates the possibility of hydrogen migration in BaTiO3-based dielectrics to improve the electrical reliability of multi-layer ceramic capacitors under conditions of high temperature, humidity, and electric field bias. It was observed that the deuterium in the dielectric drifted and migrated with the electric field, suggesting that deuterium exists as D+. The activation energy was found to be 0.34 eV, which is lower than that observed in previous studies. This finding offers a better understanding of the mechanism behind the migration of deuterium in a dielectric, whic

APA, Harvard, Vancouver, ISO, and other styles

46

Xie, Juan, Hanxing Liu, Zhonghua Yao, et al. "Achieving ultrahigh energy storage performance in bismuth magnesium titanate film capacitors via amorphous-structure engineering." Journal of Materials Chemistry C 7, no. 43 (2019): 13632–39. http://dx.doi.org/10.1039/c9tc04121d.

Full text

APA, Harvard, Vancouver, ISO, and other styles

47

Bachman, Mark A., Jerry Liao, John Osenbach, Zafer Kutlu, Jaeyun Gim, and Danny Brady. "Large Die Size Lead Free Flip Chip Ball Grid Array Packaging Considerations for 40nm Fab Technology." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2012, DPC (2012): 000570–85. http://dx.doi.org/10.4071/2012dpc-ta23.

Full text

Abstract:

To reduce the RC latency, leading edge silicon nodes employ porous SiO2 dielectrics in the interconnect stack. Introduction of porosity lowers the dielectric constant, k, but also significantly decreases both the elastic modulus and fracture toughness of the dielectric. As such, devices manufactured in silicon processes that use low K (90nm, 65nm, and 55nm) and even more so extremely low K ( 45nm, 40nm, and 28nm) interlayer dielectrics are substantially more prone to fracture as a result of package induced stresses than non porous higher K dielectrics. Since the package stresses scale with die

APA, Harvard, Vancouver, ISO, and other styles

48

Petzelt, Jan. "Infrared and THz spectroscopy of nanostructured dielectrics." Processing and Application of Ceramics 3, no. 3 (2009): 145–55. http://dx.doi.org/10.2298/pac0903145p.

Full text

Abstract:

Results achieved using the infrared/THz spectroscopy of various inhomogeneous dielectrics in the Department of Dielectrics, Institute of Physics, Prague, during the last decade are briefly reviewed. The discussion concerns high-permittivity ceramics with inevitable low-permittivity dead layers along the grain boundaries, relaxor ferroelectrics with highly anisotropic polar nano-regions, classical matrix-type composites, core-shell composites, filled nanoporous glasses, polycrystalline and epitaxial thin films, heterostructures and superlattices on dielectric substrates. The analysis using mode

APA, Harvard, Vancouver, ISO, and other styles

49

Gridnev, S. A. "Dielectric Relaxation in Disordered Polar Dielectrics." Ferroelectrics 266, no. 1 (2002): 507–45. http://dx.doi.org/10.1080/00150190211307.

Full text

APA, Harvard, Vancouver, ISO, and other styles

50

Gridnev, S. A. "Dielectric Relaxation in Disordered Polar Dielectrics." Ferroelectrics 266, no. 1 (2002): 171–209. http://dx.doi.org/10.1080/00150190211452.

Full text

APA, Harvard, Vancouver, ISO, and other styles

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!