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Relevant bibliographies by topics / Diluted magnetic III-V semiconductors

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Academic literature on the topic 'Diluted magnetic III-V semiconductors'

Author: Grafiati

Published: 4 June 2021

Last updated: 2 February 2022

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Journal articles on the topic "Diluted magnetic III-V semiconductors"

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Twardowski, A. "Diluted Magnetic III-V Semiconductors." Acta Physica Polonica A 98, no. 3 (2000): 203–16. http://dx.doi.org/10.12693/aphyspola.98.203.

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Munekata, H., H. Ohno, S. von Molnar, Armin Segmüller, L. L. Chang, and L. Esaki. "Diluted magnetic III-V semiconductors." Physical Review Letters 63, no. 17 (1989): 1849–52. http://dx.doi.org/10.1103/physrevlett.63.1849.

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Dietl, Tomasz, and Hideo Ohno. "Ferromagnetic III–V and II–VI Semiconductors." MRS Bulletin 28, no. 10 (2003): 714–19. http://dx.doi.org/10.1557/mrs2003.211.

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AbstractRecent years have witnessed extensive research aimed at developing functional, tetrahedrally coordinated ferromagnetic semiconductors that could combine the resources of semiconductor quantum structures and ferromagnetic materials systems and thus lay the foundation for semiconductor spintronics. Spin-injection capabilities and tunability of magnetization by light and electric field in Mn-based III–V and II–VI diluted magnetic semiconductors are examples of noteworthy accomplishments. This article reviews the present understanding of carrier-controlled ferromagnetism in these compounds with a focus on mechanisms determining Curie temperatures and accounting for magnetic anisotropy and spin stiffness as a function of carrier density, strain, and confinement. Materials issues encountered in the search for semiconductors with a Curie point above room temperature are addressed, emphasizing the question of solubility limits and self-compensation that can lead to precipitates and point defects. Prospects associated with compounds containing magnetic ions other than Mn are presented.

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Ohno, H., H. Munekata, S. von Molnár, and L. L. Chang. "New III‐V diluted magnetic semiconductors (invited)." Journal of Applied Physics 69, no. 8 (1991): 6103–8. http://dx.doi.org/10.1063/1.347780.

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Munekata, H., H. Ohno, R. R. Ruf, R. J. Gambino, and L. L. Chang. "P-Type diluted magnetic III–V semiconductors." Journal of Crystal Growth 111, no. 1-4 (1991): 1011–15. http://dx.doi.org/10.1016/0022-0248(91)91123-r.

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Ohno, H. "Mn-Based III-V Diluted Magnetic (Semimagnetic) Semiconductors." Materials Science Forum 182-184 (February 1995): 443–50. http://dx.doi.org/10.4028/www.scientific.net/msf.182-184.443.

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Turek, I., J. Kudrnovský, V. Drchal, and P. Weinberger. "Residual resistivity of diluted III–V magnetic semiconductors." Journal of Physics: Condensed Matter 16, no. 48 (2004): S5607—S5614. http://dx.doi.org/10.1088/0953-8984/16/48/017.

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HOANG, ANH TUAN, and DUC ANH LE. "OPTICAL CONDUCTIVITY OF (III, Mn)V DILUTED MAGNETIC SEMICONDUCTORS." Modern Physics Letters B 21, no. 02n03 (2007): 69–77. http://dx.doi.org/10.1142/s0217984907012591.

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The coherent potential approximation (CPA) is used on a minimal model of diluted magnetic semiconductors (DMS), where the carrier feels a nonmagnetic potential at a magnetic impurity site, and its spin interacts with the localized spins of the magnetic impurities through exchange interactions. The CPA equations for one particle Green function are derived and the optical conductivity dependence on the system parameters and temperature is investigated. For illustration, the case of Ga 1-x Mn x As is considered and compared with experimental data.

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Ohno, H. "Diluted Magnetic III–V Semiconductors and Its Transport Properties." Japanese Journal of Applied Physics 32, S3 (1993): 459. http://dx.doi.org/10.7567/jjaps.32s3.459.

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von Molnár, S., H. Munekata, H. Ohno, and L. L. Chang. "New diluted magnetic semiconductors based on III–V compounds." Journal of Magnetism and Magnetic Materials 93 (February 1991): 356–64. http://dx.doi.org/10.1016/0304-8853(91)90361-d.

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Dissertations / Theses on the topic "Diluted magnetic III-V semiconductors"

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Rajaram, Rekha. "Study of magnetism in dilute magnetic semiconductors based on III-V nitrides /." May be available electronically:, 2007. http://proquest.umi.com/login?COPT=REJTPTU1MTUmSU5UPTAmVkVSPTI=&clientId=12498.

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Stanciu, Victor. "Magnetism of Semiconductors and Metallic Multilayers." Doctoral thesis, Uppsala : Acta Universitatis Upsaliensis : Univ.-bibl. [distributör], 2005. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-5844.

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Tanaka, Hiroki. "Zeeman Splitting Caused by Localized sp-d Exchange Interaction in Ferromagnetic GaMnAs Observed by Magneto-Optical Characterization." Ohio University / OhioLINK, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1441982108.

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Yuan, Ye. "The interplay between localization and magnetism in III-Mn-V dilute ferromagnetic semiconductors." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2018. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-232203.

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III-Mn-V dilute ferromagnetic semiconductors (DFSs) have been treated as a candidate material for semiconductor spintronics due to their intrinsic ferromagnetism mediated by holes. In this thesis, three different Mn doped III-V DFSs, (In,Mn)As, (Ga,Mn)As, and (Ga,Mn)P, have been produced by ion implantation and pulsed laser melting. The comparison of magnetic anisotropy, magnetization, Curie temperature, as well as the electrical property is performed between three different materials to understand the nature of hole-mediated ferromagnetism in DFSs. An in-plane magnetic easy axis is observed in (Ga,Mn)As and (Ga,Mn)P, while an out-of-plane magnetic easy axis is found in (In,Mn)As due to the contribution of different inner strain resulting from the lattice mismatch between the DFS layer and the corresponding substrate. Most importantly, the direct proof of interplay between localization and magnetism is provided by a systematic comparison between (Ga,Mn)As and (In,Mn)As. When the Mn concentration is increased in the regime of the insulator-metal transition, the long-range ferromagnetic coupling is gradually built up accompanied with the appearance of metallic features. The generation of long-range global ferromagnetism is strongly influenced by the p-d coupling between hole and Mn local spins: The global ferromagnetism (metallic feature) happens at lower Mn concentration in (In,Mn)As than in (Ga,Mn)As due to the stronger p-d coupling from the smaller lattice parameter of GaAs. Moreover, for the case of (Ga,Mn)P with the strongest p-d coupling in comparison with (In,Mn)As and in (Ga,Mn)As, the super-exchange model has to be considered, since metallic features does not appear at the highest obtainable Mn concentration. Through the comparison between three different DFS materials, our findings strongly advocate for the heterogeneous model of electronic states at the localization boundary and point to the crucial role of weakly localized holes in mediating efficient spin-spin interactions even on the insulator side of the insulator-metal transition at least for (In,Mn)As and in (Ga,Mn)As.

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Railson, Stuart Vaughan. "Optical spectroscopy of Cdâ†1â†â†â†xMnâ†xTe heterostructures." Thesis, University of East Anglia, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.318019.

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Priest, Andrew Nicholas. "Inter-band magneto-optical studies of III-V semiconductors." Thesis, University of Oxford, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.299229.

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Walsh, Kevin Anthony Peter. "Relaxation and field-cycling nuclear magnetic resonance studies of doped III-V semiconductors." Thesis, University of Surrey, 1992. http://epubs.surrey.ac.uk/843507/.

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Nuclear Magnetic Resonance Field Cycling has been further developed as a spectroscopy for impurities in III-V semiconductors. It has been used to investigate the quadrupolar and hyperfine interactions around impurity sites in GaAs and InP. Large low field relaxation peaks in the range 0 to 100 Gauss have been observed in matrix nuclei resulting from deep level impurities and broader peaks up to 1000 Gauss from shallow level impurities. The temperature dependences, from 4K to 300K, of the spin-lattice relaxation times of the matrix nuclei in doped III-V semiconductors have been measured and interpreted in terms of Korringa and quadrupolar relaxation. A detailed theory of the field-cycling experiments based on the cross-coupling of energy levels of the matrix nuclei has been developed. In addition, the spin-lattice relaxation rates have been used to understand the dynamics of cross-coupling. Anomalous field-cycling spectra have been observed in optically irradiated InP:Co and low frequency (< 1MHz) irradiated InP:S. These have been investigated in depth and possible models to interpret the results have been developed. Finally, a system has been designed and constructed to investigate NMR and related phenomena in two-dimensional electron gas systems.

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Yuan, Ye [Verfasser], Manfred [Akademischer Betreuer] Helm, and Shengqiang [Gutachter] Zhou. "The interplay between localization and magnetism in III-Mn-V dilute ferromagnetic semiconductors / Ye Yuan ; Gutachter: Shengqiang Zhou ; Betreuer: Manfred Helm." Dresden : Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2018. http://d-nb.info/1151127779/34.

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Frougier, Julien. "Toward Spin-LED and Spin-VECSEL operations at magnetic remanence." Thesis, Paris 11, 2014. http://www.theses.fr/2014PA112175/document.

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Cette thèse de doctorat propose d'explorer un nouveau paradigme de propagation de l'information de spin sur de très longues distances après encodage sur la polarisation de lumière cohérente. L'objectif principal de ce manuscrit est de fournir une étude détaillée de l'injection de spin dans des composants optoélectroniques III-V à géométrie verticale. Pour atteindre cet objectif, nous nous concentrons sur l'étude de l'injection optique et électrique de spin dans des structures « Light Emitting Diodes » (LEDs) et des structures « Vertical External Cavity Surface Emitting Lasers » (VECSELs) à base de semiconducteurs III-V. Nos investigations et résultats sont présentés suivant trois axes majeurs.La première partie regroupe un état de l'art sur l'injection de spin dans les composants optoélectroniques III-V et se concentre sur les phénomènes physiques engagés dans la conversion d'une accumulation de spin en information de polarisation lumineuse. Une discussion sur l'injection et le transport de spin dans des structures semi-conductrices est suivie par une analyse orientée-composant sur l'injection de spin dans les LEDs et les VCSELs.La deuxième axe s'articule autour de notre travail expérimental sur le développement et l'optimisation sur LEDs III-V d'un injecteur de spin MgO/CoFeB/Ta ultra-fin présentant une aimantation perpendiculaire à la rémanence magnétique. Nous nous focalisons en premier lieu sur l'optimisation de la barrière tunnel MgO pour maximiser l'injection de porteurs polarisés en spin et détaillons par la suite le développement et la caractérisation d’un injecteur de spin possédant une aimantation perpendiculaire à la rémanence magnétique.La troisième partie contient le travail principal de cette thèse de doctorat. Elle est entièrement consacrée à notre recherche expérimentale sur l'injection de spin dans les structures « Vertical External Cavity Surface Emitting Lasers ». Nous commençons par introduire un model vectoriel permettant la compréhension théorique de la sélection de polarisation dans les structures VECSELs injectées en spin. Nous rapportons ensuite la mesure de biréfringence d'une structure VECSEL designée pour le pompage optique en utilisant une technique expérimentale originale basée sur la mesure du décalage en fréquence entre les deux modes de polarisation orthogonaux TE et TM. Ultérieurement, nos observations et résultats sur l'injection optique de spin dans les VECSELs sont détaillés, analysés et commentés. L'étude est étendue à l'estimation des temps de vie caractéristiques du système par mesures de Photoluminescence résolues en temps afin d'évaluer l'efficacité de conversion de l'information de spin. Pour finir, les résultats préliminaires sur l'injection électrique de spin dans les VECSELs sont présentés<br>This Ph.D Thesis proposes to explore a new paradigm of spin-information propagation over very long distances after encoding on coherent light polarization. The main objective of this manuscript is to provide a detailed study of spin-injection into III-V semiconductor based opto-electronic devices with vertical geometries. To achieve this goal, we focus on the study of optical and electrical spin-injection in III-V semiconductor based Light Emitting Diodes (LEDs) and Vertical External Cavity Surface Emitting Lasers (VECSELs). Our investigations and results are presented on three axes.The first part regroups a state-of-the-art of spin-injection into semiconductors optoelectronic devices and focuses on the physical phenomena engaged in the conversion of a spin accumulation into light polarization information. A discussion on spin-injection and spin-transport into III-V semiconductor structures is followed by a more device-oriented review on spin-injection in LEDs and VCSELs.The second axis is articulated around our experimental work on the development and the optimization on III-V semiconductors LEDs of an ultra-thin MgO/CoFeB/Ta spin-injector with perpendicular magnetization at magnetic remanence. We focus on the MgO tunnel barrier optimization for maximizing the spin-injection efficiency and further detailed the development and the characterization of the spin-injector with perpendicular magnetization at remanence.Finally, the third part contains the main work of this Ph.D thesis. It is fully dedicated to our experimental research on spin-injection in Vertical External Cavity Surface Emitting Laser structures. A vectorial model allowing the theoretical understanding of polarization selection in spin-injected VECSELs is first introduced. Next, we report the birefringence measurement of a VECSEL designed for optical pumping using an original frequency detuning measurement between the two orthogonal TE- and TM-modes. Afterward, our observations and results on optical spin-injection in VECSELs are displayed, analyzed and commented. The study is farther extended to the measurement of the system's characteristic lifetimes using Time Resolved Photo-Luminescence in order to evaluate the spin-information conversion efficiency. Finally the preliminary results on electrical spin-injection experiment are presented

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Meeker, Michael A. "Spin and Carrier Relaxation Dynamics in InAsP Ternary Alloys, the Spin-orbit-split Hole Bands in Ferromagnetic InMnSb and InMnAs, and Reflectrometry Measurements of Valent Doped Barium Titanate." Diss., Virginia Tech, 2016. http://hdl.handle.net/10919/83494.

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This dissertation focuses on projects where optical techniques were employed to characterize novel materials, developing concepts toward next generation of devices. The materials that I studied included InAsP, InMnSb and InMnAs, and BT-BCN. I have employed several advanced time resolved and magneto-optical techniques to explore unexplored properties of these structures. The first class of the materials were the ternary alloys InAsP. The electron g-factor of InAsP can be tuned, even allowing for g=0, making InAsP an ideal candidate for quantum communication devices. Furthermore, InAsP shows promises for opto-electronics and spintronics, where the development of devices requires extensive knowledge of carrier and spin dynamics. Thus, I have performed time and polarization resolved pump-probe spectroscopy on InAsP with various compositions. The carrier and spin relaxation time in these structures were observed and demonstrated tunability to the excitation wavelengths, composition and temperature. The sensitivity to these parameters provide several avenues to control carrier and spin dynamics in InAsP alloys. The second project focused on the ferromagnetic narrow gap semiconductors InMnAs and InMnSb. The incorporation of Mn can lead to ferromagnetic behavior of InMnAs and InMnSb, and enhance the g-factors, making them ideal candidates for spintronics devices. When grown using Molecular Beam Epitaxy (MBE), the Curie temperature (textit{$T_c$}) of these structures is textless 100 K, however structures grown using Metalorganic Vapor phase Epitaxy (MOVPE) have textit{$T_c$} textgreater 300 K. Magnetic circular dichroism was performed on MOVPE grown InMnAs and InMnSb. Comparison of the experimental results with the theoretical calculations provides a direct method to map the band structure, including the temperature dependence of the spin-orbit split-off band to conduction band transition and g-factors, as well as the estimated sp-d electron/hole coupling parameters. My final project was on the lead-free ferroelectric BT-BCN. Ferroelectric materials are being investigated for high speed, density, nonvolatile and energy efficient memory devices; however, commercial ferroelectric memories typically contain lead, and use a destructive reading method. Reflectometry measurements were used in order to determine the refractive index of BT-BCN with varying thicknesses, which can provide a means to nondestructively read ferroelectric memory through optical methods.<br>Ph. D.

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Books on the topic "Diluted magnetic III-V semiconductors"

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Rössler, U., ed. New Data and Updates for IV-IV, III-V, II-VI and I-VII Compounds, their Mixed Crystals and Diluted Magnetic Semiconductors. Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-14148-5.

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Goumri-Said, Souraya. Investigation of electronic, magnetic and elastic properties using first principles calculations and new empirical approach: Application to III-V, II-VI semiconductors and perovskite-like fluorides materials, 2006. Transworld Research Network, 2006.

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Glazov, M. M. Hyperfine Interaction of Electron and Nuclear Spins. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198807308.003.0004.

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This chapter discusses the key interaction–hyperfine coupling–which underlies most of phenomena in the field of electron and nuclear spin dynamics. This interaction originates from magnetic interaction between the nuclear and electron spins. For conduction band electrons in III–V or II–VI semiconductors, it is reduced to a Fermi contact interaction whose strength is proportional to the probability of finding an electron at the nucleus. A more complex situation is realized for valence band holes where hole Bloch functions vanish at the nuclei. Here the hyperfine interaction is of the dipole–dipole type. The modification of the hyperfine coupling Hamiltonian in nanosystems is also analyzed. The chapter contains also an overview of experimental data aimed at determination of the hyperfine interaction parameters in semiconductors and semiconductor nanostructures.

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Book chapters on the topic "Diluted magnetic III-V semiconductors"

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da Silva, E. C. F. "Diluted magnetic oxides: magnetic properties." In New Data and Updates for IV-IV, III-V, II-VI and I-VII Compounds, their Mixed Crystals and Diluted Magnetic Semiconductors. Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-14148-5_297.

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Kamatani, T., and H. Akai. "Electronic structure of superlattices of II–VI/III–V diluted magnetic semiconductors." In Springer Proceedings in Physics. Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59484-7_112.

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Kilanski, L., R. Szymczak, E. Dynowska, et al. "Magnetic Interactions and Magnetotransport in Ge1-X TM x Te Diluted Magnetic Semiconductors." In Proceedings of the III Advanced Ceramics and Applications Conference. Atlantis Press, 2015. http://dx.doi.org/10.2991/978-94-6239-157-4_6.

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Matsukura, F. "Ga1-xCrxAs: magnetic phases, Curie temperature, magnetic circular dichroism." In New Data and Updates for IV-IV, III-V, II-VI and I-VII Compounds, their Mixed Crystals and Diluted Magnetic Semiconductors. Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-14148-5_94.

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Matsukura, F. "Al1-xMnxAs: magnetic phases." In New Data and Updates for IV-IV, III-V, II-VI and I-VII Compounds, their Mixed Crystals and Diluted Magnetic Semiconductors. Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-14148-5_55.

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Matsukura, F. "Ga1-xCrxSb: magnetic phases." In New Data and Updates for IV-IV, III-V, II-VI and I-VII Compounds, their Mixed Crystals and Diluted Magnetic Semiconductors. Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-14148-5_200.

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Dietl, T. "Pb 1-x Eu x Se: g-factors of magnetic ions." In New Data and Updates for IV-IV, III-V, II-VI and I-VII Compounds, their Mixed Crystals and Diluted Magnetic Semiconductors. Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-14148-5_212.

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Meyer, B. K. "ZnO: exciton binding energies." In New Data and Updates for IV-IV, III-V, II-VI and I-VII Compounds, their Mixed Crystals and Diluted Magnetic Semiconductors. Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-14148-5_332.

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Meyer, B. K. "ZnO: ionization energies, capture cross sections." In New Data and Updates for IV-IV, III-V, II-VI and I-VII Compounds, their Mixed Crystals and Diluted Magnetic Semiconductors. Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-14148-5_333.

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Meyer, B. K. "ZnO: acceptor binding energies." In New Data and Updates for IV-IV, III-V, II-VI and I-VII Compounds, their Mixed Crystals and Diluted Magnetic Semiconductors. Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-14148-5_334.

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Conference papers on the topic "Diluted magnetic III-V semiconductors"

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Wolos, A., M. Zajac, J. Gosk, et al. "Diluted Magnetic III-V Semiconductors With Mn For Possible Spintronic Applications." In PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. AIP, 2007. http://dx.doi.org/10.1063/1.2730329.

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TAKAHASHI, MASAO. "OPTICAL BAND EDGE OF II-VI AND III-V BASED DILUTED MAGNETIC SEMICONDUCTORS." In Proceedings of the International Symposium on Mesoscopic Superconductivity and Spintronics — In the Light of Quantum Computation. WORLD SCIENTIFIC, 2005. http://dx.doi.org/10.1142/9789812701619_0066.

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Peleckis, G., X. Wang, S. Dou, and Q. Yao. "Magnetic and transport properties of transition metal ion doped diluted magnetic semiconductors In2-xTMxO3 (TM = Cr, Mn, Fe, V)." In INTERMAG 2006 - IEEE International Magnetics Conference. IEEE, 2006. http://dx.doi.org/10.1109/intmag.2006.375645.

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Fumagalli, P., H. Munekata, and R. J. Gambino. "Magneto-optical Study On Diluted Magnetic III-v Heterostructures." In 1993 Digests of International Magnetics Conference. IEEE, 1993. http://dx.doi.org/10.1109/intmag.1993.642219.

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Davies, Ryan, Mat Ivill, Jennifer Hite, et al. "Gd-doped III-nitride Dilute Magnetic Semiconductor Materials." In 2008 MRS Fall Meetin. Materials Research Society, 2008. http://dx.doi.org/10.1557/proc-1111-d03-05.

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Asahi, Hajime, Y. K. Zhou, Mamoru Hashimoto, R. Asano, and Hiroyuki Tanaka. "New III-V-based magnetic semiconductors and their optical and magnetic properties." In Integrated Optoelectronics Devices, edited by Manijeh Razeghi and Gail J. Brown. SPIE, 2003. http://dx.doi.org/10.1117/12.482476.

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Koyama, T., K. Nishibayashi, A. Murayama, et al. "Spin Dynamics of Type-II Excitons in Diluted Magnetic Double Quantum Wells." In PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. AIP, 2007. http://dx.doi.org/10.1063/1.2729967.

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Jeon, H. C., S. J. Lee, T. W. Kang, Marília Caldas, and Nelson Studart. "Microstructural, magnetic, and optical properties of the self-assembled (III[sub 1−x]Mn[sub x])V quantum structure." In PHYSICS OF SEMICONDUCTORS: 29th International Conference on the Physics of Semiconductors. AIP, 2010. http://dx.doi.org/10.1063/1.3295474.

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Imanaka, Y., K. Takehana, T. Takamasu, et al. "Cyclotron resonance in 2D electron systems of II-VI diluted magnetic semiconductors." In 2007 Joint 32nd International Conference on Infrared and Millimeter Waves and the 15th International Conference on Terahertz Electronics (IRMMW-THz). IEEE, 2007. http://dx.doi.org/10.1109/icimw.2007.4516834.

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Wang, Keqiang, Jiri Stehlik, and Jian-Qing Wang. "Spin-dependent transport characteristics across magnetic nanoscale junctions through doped IV and III/V semiconductors." In 2008 2nd IEEE International Nanoelectronics Conference. IEEE, 2008. http://dx.doi.org/10.1109/inec.2008.4585660.

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