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Journal articles on the topic 'Diluted magnetic III-V semiconductors'

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Published: 4 June 2021
Last updated: 2 February 2022

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1

Twardowski, A. "Diluted Magnetic III-V Semiconductors." Acta Physica Polonica A 98, no. 3 (2000): 203–16. http://dx.doi.org/10.12693/aphyspola.98.203.

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2

Munekata, H., H. Ohno, S. von Molnar, Armin Segmüller, L. L. Chang, and L. Esaki. "Diluted magnetic III-V semiconductors." Physical Review Letters 63, no. 17 (1989): 1849–52. http://dx.doi.org/10.1103/physrevlett.63.1849.

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3

Dietl, Tomasz, and Hideo Ohno. "Ferromagnetic III–V and II–VI Semiconductors." MRS Bulletin 28, no. 10 (2003): 714–19. http://dx.doi.org/10.1557/mrs2003.211.

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AbstractRecent years have witnessed extensive research aimed at developing functional, tetrahedrally coordinated ferromagnetic semiconductors that could combine the resources of semiconductor quantum structures and ferromagnetic materials systems and thus lay the foundation for semiconductor spintronics. Spin-injection capabilities and tunability of magnetization by light and electric field in Mn-based III–V and II–VI diluted magnetic semiconductors are examples of noteworthy accomplishments. This article reviews the present understanding of carrier-controlled ferromagnetism in these compounds with a focus on mechanisms determining Curie temperatures and accounting for magnetic anisotropy and spin stiffness as a function of carrier density, strain, and confinement. Materials issues encountered in the search for semiconductors with a Curie point above room temperature are addressed, emphasizing the question of solubility limits and self-compensation that can lead to precipitates and point defects. Prospects associated with compounds containing magnetic ions other than Mn are presented.
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4

Ohno, H., H. Munekata, S. von Molnár, and L. L. Chang. "New III‐V diluted magnetic semiconductors (invited)." Journal of Applied Physics 69, no. 8 (1991): 6103–8. http://dx.doi.org/10.1063/1.347780.

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5

Munekata, H., H. Ohno, R. R. Ruf, R. J. Gambino, and L. L. Chang. "P-Type diluted magnetic III–V semiconductors." Journal of Crystal Growth 111, no. 1-4 (1991): 1011–15. http://dx.doi.org/10.1016/0022-0248(91)91123-r.

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6

Ohno, H. "Mn-Based III-V Diluted Magnetic (Semimagnetic) Semiconductors." Materials Science Forum 182-184 (February 1995): 443–50. http://dx.doi.org/10.4028/www.scientific.net/msf.182-184.443.

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7

Turek, I., J. Kudrnovský, V. Drchal, and P. Weinberger. "Residual resistivity of diluted III–V magnetic semiconductors." Journal of Physics: Condensed Matter 16, no. 48 (2004): S5607—S5614. http://dx.doi.org/10.1088/0953-8984/16/48/017.

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8

HOANG, ANH TUAN, and DUC ANH LE. "OPTICAL CONDUCTIVITY OF (III, Mn)V DILUTED MAGNETIC SEMICONDUCTORS." Modern Physics Letters B 21, no. 02n03 (2007): 69–77. http://dx.doi.org/10.1142/s0217984907012591.

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The coherent potential approximation (CPA) is used on a minimal model of diluted magnetic semiconductors (DMS), where the carrier feels a nonmagnetic potential at a magnetic impurity site, and its spin interacts with the localized spins of the magnetic impurities through exchange interactions. The CPA equations for one particle Green function are derived and the optical conductivity dependence on the system parameters and temperature is investigated. For illustration, the case of Ga 1-x Mn x As is considered and compared with experimental data.
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9

Ohno, H. "Diluted Magnetic III–V Semiconductors and Its Transport Properties." Japanese Journal of Applied Physics 32, S3 (1993): 459. http://dx.doi.org/10.7567/jjaps.32s3.459.

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10

von Molnár, S., H. Munekata, H. Ohno, and L. L. Chang. "New diluted magnetic semiconductors based on III–V compounds." Journal of Magnetism and Magnetic Materials 93 (February 1991): 356–64. http://dx.doi.org/10.1016/0304-8853(91)90361-d.

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11

Munekata, H., T. Penney, and L. L. Chang. "Diluted magnetic III–V semiconductor structures." Surface Science 267, no. 1-3 (1992): 342–48. http://dx.doi.org/10.1016/0039-6028(92)91151-z.

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12

Van Bockstal, L., A. Van Esch, R. Bogaerts, et al. "Magnetic interactions with charge carriers in III–V diluted magnetic semiconductors." Physica B: Condensed Matter 246-247 (May 1998): 258–61. http://dx.doi.org/10.1016/s0921-4526(97)00910-1.

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13

Drchal, V., J. Kudrnovský, I. Turek, F. Máca, and P. Weinberger. "Phase stability and ordering in diluted magnetic III–V semiconductors." Philosophical Magazine 84, no. 18 (2004): 1889–905. http://dx.doi.org/10.1080/14786430310001657364.

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14

Hayashi, T., M. Tanaka, T. Nishinaga, and H. Shimada. "Magnetic and magnetotransport properties of new III-V diluted magnetic semiconductors: GaMnAs." Journal of Applied Physics 81, no. 8 (1997): 4865–67. http://dx.doi.org/10.1063/1.364859.

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15

Ohno, H. "Preparation and properties of III-V based new diluted magnetic semiconductors." Advances in Colloid and Interface Science 71-72, no. 1-3 (1997): 61–75. http://dx.doi.org/10.1016/s0001-8686(97)00010-9.

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16

Ohno, Hideo. "Preparation and properties of III-V based new diluted magnetic semiconductors." Advances in Colloid and Interface Science 71-72 (September 1997): 61–75. http://dx.doi.org/10.1016/s0001-8686(97)90010-5.

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17

Mašek, J., I. Turek, V. Drchal, J. Kudrnovský, and F. Máca. "Correlated Doping in Semiconductors: the Role of Donors in III-V Diluted Magnetic Semiconductors." Acta Physica Polonica A 102, no. 4-5 (2002): 673–78. http://dx.doi.org/10.12693/aphyspola.102.673.

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18

Yuan, Ye, Yufang Xie, Ning Yuan, et al. "The Al Doping Effect on Epitaxial (In,Mn)As Dilute Magnetic Semiconductors Prepared by Ion Implantation and Pulsed Laser Melting." Materials 14, no. 15 (2021): 4138. http://dx.doi.org/10.3390/ma14154138.

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One of the most attractive characteristics of diluted ferromagnetic semiconductors is the possibility to modulate their electronic and ferromagnetic properties, coupled by itinerant holes through various means. A prominent example is the modification of Curie temperature and magnetic anisotropy by ion implantation and pulsed laser melting in III–V diluted magnetic semiconductors. In this study, to the best of our knowledge, we performed, for the first time, the co-doping of (In,Mn)As diluted magnetic semiconductors by Al by co-implantation subsequently combined with a pulsed laser annealing technique. Additionally, the structural and magnetic properties were systematically investigated by gradually raising the Al implantation fluence. Unexpectedly, under a well-preserved epitaxial structure, all samples presented weaken Curie temperature, magnetization, as well as uniaxial magnetic anisotropies when more aluminum was involved. Such a phenomenon is probably due to enhanced carrier localization introduced by Al or the suppression of substitutional Mn atoms.
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19

Munekata, H. "Epitaxy of III–V diluted magnetic semiconductor materials." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 8, no. 2 (1990): 176. http://dx.doi.org/10.1116/1.584849.

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20

Katsumoto, S., T. Hayashi, Y. Hashimoto, et al. "Magnetism and metal-insulator transition in III-V based diluted magnetic semiconductors." Materials Science and Engineering: B 84, no. 1-2 (2001): 88–95. http://dx.doi.org/10.1016/s0921-5107(01)00575-x.

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21

Iye, Y., A. Oiwa, A. Endo, et al. "Metal–insulator transition and magnetotransport in III–V compound diluted magnetic semiconductors." Materials Science and Engineering: B 63, no. 1-2 (1999): 88–95. http://dx.doi.org/10.1016/s0921-5107(99)00057-4.

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22

Kamatani, T., and H. Akai. "Electronic structure of superlattices of II–VI/III–V diluted magnetic semiconductors." Physica E: Low-dimensional Systems and Nanostructures 10, no. 1-3 (2001): 157–60. http://dx.doi.org/10.1016/s1386-9477(01)00073-x.

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23

Sato, K., P. H. Dederics, and H. Katayama-Yoshida. "Curie temperatures of III–V diluted magnetic semiconductors calculated from first principles." Europhysics Letters (EPL) 61, no. 3 (2003): 403–8. http://dx.doi.org/10.1209/epl/i2003-00191-8.

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24

Ohno, H., H. Munekata, T. Penney, S. von Molnár, and L. L. Chang. "Magnetotransport properties ofp-type (In,Mn)As diluted magnetic III-V semiconductors." Physical Review Letters 68, no. 17 (1992): 2664–67. http://dx.doi.org/10.1103/physrevlett.68.2664.

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25

Dakhlaoui, H., and S. Jaziri. "Magnetic properties in III–V diluted magnetic semiconductor quantum wells." Physica B: Condensed Matter 355, no. 1-4 (2005): 401–7. http://dx.doi.org/10.1016/j.physb.2004.11.068.

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26

BHATT, R. N., CHENGGANG ZHOU, MALCOLM KENNETT, MONA BERCIU, and XIN WAN. "DISORDER AND FRUSTRATION IN DILUTED MAGNETIC SEMICONDUCTORS AT LOW CARRIER DENSITIES." International Journal of Modern Physics B 19, no. 01n03 (2005): 5–7. http://dx.doi.org/10.1142/s0217979205027858.

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We examine the effects of positional disorder of the magnetic ion in III-V Diluted Magnetic Semiconductors such as ( Ga , Mn ) As at low carrier densities on the nature of the low-temperature ordered magnetic state, using numerical mean field and Monte Carlo methods. We find that positional disorder leads to a highly inhomogeneous ferromagnetic order in the low carrier density limit, with unusual thermodynamic and magnetic behavior. Spin-orbit coupling presented in the valence band leads to frustration in the hole-doped system, but does not significantly affect the low temperature magnetization.
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27

Thai, Vu Kim, Le Duc Anh, and Hoang Anh Tuan. "Effect of the direct exchange interaction between magnetic impurities on magnetization in diluted magnetic semiconductors." Communications in Physics 22, no. 1 (2012): 53–58. http://dx.doi.org/10.15625/0868-3166/22/1/186.

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We consider a model of III-V diluted magnetic semiconductors where both of the exchange interaction between carrier and impurity spins, and the direct exchange interaction between magnetic impurities are taken into account. The magnetization as a function of temperature for a wide range of model parameters is calculated and discussed. We show that for a degenerate carrier system the suppression of the magnetization is sensitive to the antiferromagnetic coupling constant and the impurity concentration.
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28

Stephanovich, V. A., and Yu G. Semenov. "The Magnetic Domain Structure Properties in Diluted Magnetic Semiconductors." Ukrainian Journal of Physics 65, no. 10 (2020): 881. http://dx.doi.org/10.15407/ujpe65.10.881.

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We present a comprehensive analysis of the domain structure formation in the ferromagneticphase of diluted magnetic semiconductors (DMS) of the p-type. Our analysis is carried outon the base of the effective magnetic free energy of DMS calculated by us earlier. This freeenergy, substituting DMS (a disordered magnet) by an effective ordered substance, permits usto apply the standard phenomenological approach to the domain structure calculation. Usingthe coupled system of Maxwell equations with those obtained by the minimization of the freeenergy functional, we show the existence of the critical ratio vcr of concentration of chargecarriers and magnetic ions such that the sample critical thickness Lcr (such that the sampleis monodomain at L < Lcr) diverges as v → vcr. At v > vcr, the sample is monodomain. Thisfeature makes DMS different from conventional ordered magnets, as it gives a possibility tocontrol the sample critical thickness and the emerging domain structure period by a variationof v. As the concentration of magnetic impurities grows, vcr → ∞, restoring a conventionalbehavior of ordered magnets. Above facts have been revealed by the examination of the tem-perature of the transition to an inhomogeneous magnetic state (stripe domain structure) inthe slab of a p-type DMS with finite thickness L. Our theory can be easily generalized for anarbitrary disordered magnet.
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29

Kaushik, Hari Shankar, Anuradha Sharma, and Mamta Sharma. "Optically Induced Ferromagnetism in III-V Dilute Magnetic Semiconductors." Integrated Ferroelectrics 203, no. 1 (2019): 67–73. http://dx.doi.org/10.1080/10584587.2019.1674967.

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30

Ohno, H., H. Munekata, T. Penney, S. von Molnár, and L. Chang. "Partial Ferromagnetic Order in p-Type (In, Mn) as Diluted Magnetic III-V Semiconductors." Materials Science Forum 117-118 (January 1993): 297–302. http://dx.doi.org/10.4028/www.scientific.net/msf.117-118.297.

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31

Hayashi, T., M. Tanaka, T. Nishinaga, H. Shimada, H. Tsuchiya, and Y. Otuka. "(GaMn)As: GaAs-based III–V diluted magnetic semiconductors grown by molecular beam epitaxy." Journal of Crystal Growth 175-176 (May 1997): 1063–68. http://dx.doi.org/10.1016/s0022-0248(96)00937-2.

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32

Shen, A., F. Matsukura, Y. Sugawara, et al. "Epitaxy and properties of diluted magnetic III–V semiconductor heterostructures." Applied Surface Science 113-114 (April 1997): 183–88. http://dx.doi.org/10.1016/s0169-4332(96)00865-3.

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33

Saito, H., W. Zaets, R. Akimoto, K. Ando, Y. Mishima, and M. Tanaka. "Magnetic and transport properties of III–V diluted magnetic semiconductor Ga1−xCrxAs." Journal of Applied Physics 89, no. 11 (2001): 7392–94. http://dx.doi.org/10.1063/1.1359475.

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34

Hashimoto, Y., T. Hayashi, S. Katsumoto, and Y. Iye. "Effect of low-temperature annealing on the crystallinity of III–V-based diluted magnetic semiconductors." Journal of Crystal Growth 237-239 (April 2002): 1334–38. http://dx.doi.org/10.1016/s0022-0248(01)02063-2.

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35

Soo, Y. L., S. W. Huang, Z. H. Ming, Y. H. Kao, H. Munekata, and L. L. Chang. "III-V diluted magnetic semiconductor: Substitutional doping of Mn in InAs." Physical Review B 53, no. 8 (1996): 4905–9. http://dx.doi.org/10.1103/physrevb.53.4905.

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36

Munekata, H., T. Abe, S. Koshihara, et al. "Light-induced ferromagnetism in III-V-based diluted magnetic semiconductor heterostructures." Journal of Applied Physics 81, no. 8 (1997): 4862–64. http://dx.doi.org/10.1063/1.364889.

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37

SOUMA, SATOFUMI, SEUNG JOO LEE, and TAE WON KANG. "NUMERICAL STUDY OF FERROMAGNETISM IN DILUTED MAGNETIC SEMICONDUCTOR QUANTUM-WELLS." International Journal of Modern Physics B 19, no. 19 (2005): 3151–60. http://dx.doi.org/10.1142/s0217979205031973.

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We study the ferromagnetism in III-V diluted magnetic semiconductor (DMS) quantum-wells theoretically and numerically taking into account the occupation of multiple subbands by holes in quantum wells. Starting from the mean-field theory of carrier-induced ferromagnetism in III-V DMS along with the exchange-correlation interaction of holes within the local spin density approximation, we found that the ferromagnetic transition temperature Tc of DMS quantum-wells exhibits step-function-like dependence on the hole density, reflecting the quasi-two-dimensional nature of systems. Moreover, the temperature dependence of the spin polarization shows quite distinct characteristics depending on the hole density.
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38

Ul Haq, Bakhtiar, R. Ahmed, A. Shaari, R. Hussain, and Mazmira binti Mohamad. "DFT Investigations of Ti, V Doped ZnO Based Diluted Magnetic Semiconductors." Advanced Materials Research 1107 (June 2015): 502–7. http://dx.doi.org/10.4028/www.scientific.net/amr.1107.502.

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The injection impurity element into ZnO has added new dimension to its versatile applications particularly in spintronics and optoelectronics. In this work, we are reporting effect of non magnetic Ti, and magnetic V impurities in ZnO. The substitution of impurity atoms have been done in ground state wurtzite (WZ) and meta stable zinc-blende (ZB) structure. Our investigations have revealed a small difference in WZ and ZB geometries of contaminated ZnO reflecting on the possibility of their experimental fabrication. Spin polarized electronic structures resembled nonmagnetic nature of Ti:ZnO in WZ and magnetic nature in ZB geometry. Similarly introduction of V in to ZnO induced magnetization in ZnO in both WZ and ZB geometry. For these investigations, we have adapted DFT approach using FP-L(APW+lo) method implemented in WIEN2k code.
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39

Zaets, Wadim, Hidekazu Saito, and Koji Ando. "Growth and properties of new III–V diluted magnetic semiconductor Ga1−xCrxAs." Journal of Crystal Growth 237-239 (April 2002): 1339–43. http://dx.doi.org/10.1016/s0022-0248(01)02169-8.

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40

Abe, E., F. Matsukura, H. Yasuda, Y. Ohno, and H. Ohno. "Molecular beam epitaxy of III–V diluted magnetic semiconductor (Ga,Mn)Sb." Physica E: Low-dimensional Systems and Nanostructures 7, no. 3-4 (2000): 981–85. http://dx.doi.org/10.1016/s1386-9477(00)00100-4.

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41

Munekata, H., L. L. Chang, A. Krol, et al. "Local Mn structures in III—V diluted magnetic semiconductor (In,Mn)As." Journal of Crystal Growth 127, no. 1-4 (1993): 528–31. http://dx.doi.org/10.1016/0022-0248(93)90676-n.

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42

Liu, Hongbo, Yang Liu, Lili Yang, et al. "Role of oxygen vacancies in V-doped ZnO diluted magnetic semiconductors." Journal of Materials Science: Materials in Electronics 26, no. 4 (2015): 2466–70. http://dx.doi.org/10.1007/s10854-015-2707-y.

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43

Tanaka, M., T. Hayashi, T. Nishinaga, and H. Shimada. "Epitaxial Growth, Magnetic and Transport Properties of a New III-V Diluted Magnetic Semiconductor: GaMnAs." Journal of the Magnetics Society of Japan 21, no. 4_2 (1997): 393–96. http://dx.doi.org/10.3379/jmsjmag.21.393.

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44

Karar, N., and S. Basu. "Synthesis and growth of Ga1−xFexSb, a new III–V diluted magnetic semiconductor." Materials Science and Engineering: B 60, no. 1 (1999): 21–24. http://dx.doi.org/10.1016/s0921-5107(99)00018-5.

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45

Kim, Nammee, S. J. Lee, and T. W. Kang. "Study on phase transitions of III-Mn-V diluted magnetic semiconductor quantum wires." Physics Letters A 302, no. 5-6 (2002): 341–44. http://dx.doi.org/10.1016/s0375-9601(02)01168-4.

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46

Dakhlaoui, H., and S. Jaziri. "Spin-dependent transmission of holes in III–V diluted magnetic semiconductor based heterostructure." Microelectronics Journal 37, no. 8 (2006): 690–94. http://dx.doi.org/10.1016/j.mejo.2005.11.002.

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47

TOROPOV, A. A., YA V. TERENT'EV, A. V. LEBEDEV, et al. "SPIN DYNAMICS IN III-V/II-VI: Mn HETEROVALENT QUANTUM WELLS." International Journal of Modern Physics B 23, no. 12n13 (2009): 2739–49. http://dx.doi.org/10.1142/s0217979209062293.

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We report on the spectroscopic magnetooptical studies of spin dynamics in diluted magnetic semiconductor (DMS) GaAs / AlGaAs / ZnSe / ZnCdMnSe heterovalent double quantum wells (QW). The transients of circularly polarized photoluminescence in an external magnetic field are detected in the structures with different widths of the GaAs QW. The analysis of the data, performed within the rate-equation model, has allowed separate estimations of the spin relaxation rate of localized electrons and holes. The spin flip of the electrons confined in the DMS ZnCdMnSe QW is faster than 20 ps, whereas the spin flip of the heavy hole localized in the GaAs QW is as long as ~9 ns. The long spin flip of the holes is presumably governed by their strong 3-dimensional localization.
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48

Mamouni, N., A. El Kenz, H. Ez-Zahraouy, M. Loulidi, A. Benyoussef, and M. Bououdina. "Stabilization of ferromagnetism in (Cr, V) co-doped ZnO diluted magnetic semiconductors." Journal of Magnetism and Magnetic Materials 340 (August 2013): 86–90. http://dx.doi.org/10.1016/j.jmmm.2013.03.025.

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49

Hou, Qingyu, Chunwang Zhao, and Lingfeng Qu. "Effects of V heavy doping on the magnetic and optical properties in anatase TiO2." International Journal of Modern Physics B 31, no. 01 (2017): 1650240. http://dx.doi.org/10.1142/s0217979216502404.

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A half-metal diluted magnetic semiconductor (DMS) can be formed in heavy V-doped TiO2. Contradictory experimental results in the literature have reported about the absorption spectra blueshift and redshift results in heavy V-doped TiO2. This study aims to reveal the mechanism of half-metal DMS in heavy V-doped TiO2 and solve the problem of absorption spectra blueshift and redshift in the doping system. In this study, models of the unit cells of pure anatase TiO2 and two V heavy-doped supercells of Ti[Formula: see text]V[Formula: see text]O2 and Ti[Formula: see text]V[Formula: see text]O2 were constructed based on density functional theory, which uses the first-principles plane-wave ultrasoft pseudopotential method. All models were obtained through geometry optimization. Local density approximation [Formula: see text] was used to calculate the band structure, density of states (DOS), orbital charge and absorption spectrum of the doping system. The calculated results under the condition of electron spin showed that in the heavy doping concentration range, the volume of supercells increases, the total energy and formation energy decrease and the stability of the supercells increases as V doping concentration increases. Furthermore, the interaction of [Formula: see text]–[Formula: see text] states is weaker than that of [Formula: see text]–[Formula: see text] states, which results in the valence band maximum shifting toward the low-energy region, and also the optical bandgap becomes narrower as well as the redshift and intensity of the absorption spectrum become more notable. Noticeably, the hybrid coupling effect of Ti-3[Formula: see text] and V-3[Formula: see text] states becomes stronger, and the magnetic moment increases. The Fermi levels of spin-up band structure within the conduction band, which form the [Formula: see text]-type degenerate semiconductors, and the Fermi levels of spin-down band structure within the bandgap indicate that the doping system has semiconductor features. Therefore, V-doped anatase TiO2 is an extremely promising DMS because of its high electron polarizability of nearly 100%. The calculation results are consistent with the experimental data; these results explain the problems reasonably and adequately. Therefore, the research findings can help solve the contradiction of the redshift and blueshift in the preparation of photocatalysts and half-metal diluted magnetic semiconductors of V heavy-doped anatase TiO2.
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50

Dakhlaoui, Hassen, and Sihem Jaziri. "Theoretical study of the magnetoresistance under electric field in III–V diluted magnetic semiconductor." Journal of Magnetism and Magnetic Materials 293, no. 1 (2005): 215–19. http://dx.doi.org/10.1016/j.jmmm.2005.02.014.

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