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Relevant bibliographies by topics / Diluted magnetic semiconductor

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Academic literature on the topic 'Diluted magnetic semiconductor'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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Journal articles on the topic "Diluted magnetic semiconductor"

1

Lashkarev, G. V. "Diluted magnetic layered semiconductor InSe:Mn with high Curie temperature." Semiconductor Physics Quantum Electronics and Optoelectronics 14, no. 3 (September 25, 2011): 263–68. http://dx.doi.org/10.15407/spqeo14.03.263.

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CHOI, HEON-JIN, HAN-KYU SEONG, and UNGKIL KIM. "DILUTED MAGNETIC SEMICONDUCTOR NANOWIRES." Nano 03, no. 01 (February 2008): 1–19. http://dx.doi.org/10.1142/s1793292008000848.

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An idea for simultaneously manipulating spin and charge in a single semiconductor medium has resulted in the development of diluted magnetic semiconductors (DMSs), which exhibits surprisingly room temperature ferromagnetic signatures despite having controversial ferromagnetic origin. However, achievement of truly room temperature ferromagnetism by carrier mediation is still the subject of intense research to develop the practical spin-based devices. Nanowires with one-dimensional nanostructure, which offers thermodynamically stable features and typically single crystalline and defect free, have a number of advantages over thin films with respect to studying ferromagnetism in DMSs. This review focuses primarily on our works on GaN -based DMS nanowires, i.e., Mn -doped GaN , Mn -doped AlGaN and Cu -doped GaN nanowires. These DMS nanowires have room temperature ferromagnetism by the local magnetic moment of doping elements that are in a divalent state and in tetrahedral coordination, thus substituting Ga in the wurtzite-type network structure of host materials. Importantly, our evidences indicate that the magnetism is originated from the ferromagnetic interaction driven by the carrier. These outcomes suggest that nanowires are ideal building blocks to address the magnetism in DMS due to their thermodynamic stability, single crystallinity, free of defects and free standing nature from substrate. Nanowires themselves are ideal building blocks for nanodevices and, thus, it would also be helpful in developing DMS-based spin devices.

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Gunshor, R. L., N. Otsuka, M. Yamanishi, L. A. Kolodziejski, T. C. Bonsett, R. B. Bylsma, S. Datta, W. M. Becker, and J. K. Furdyna. "Diluted magnetic semiconductor superlattices." Journal of Crystal Growth 72, no. 1-2 (July 1985): 294–98. http://dx.doi.org/10.1016/0022-0248(85)90161-7.

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Samarth, N., and J. K. Furdyna. "Diluted Magnetic Semiconductors." MRS Bulletin 13, no. 6 (June 1988): 32–36. http://dx.doi.org/10.1557/s0883769400065477.

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Diluted magnetic semiconductors (DMS) are semiconducting alloys whose lattice is partly made of substitutional magnetic ions. The most extensively studied materials of this type are the alloys, in which a fraction of the group II sublattice is replaced at random by Mn. The entire family of ternary alloys, along with their crystal structure and corresponding ranges of composition, is listed in Table I. Over the past decade, these alloys have attracted a growing scientific interest because of new fundamental effects in semiconductor physics and magnetism in these materials and because of their potential applications in optical nonreciprocal devices, solid state lasers, flat panel displays, infrared detectors, and other optoelectronic applications.The increasing popularity of this field can be attributed to the broad variety of fascinating problems offered by the study of the alloys. To begin with, there is an interest in the semiconducting properties per se — for instance, the understanding of the electronic band structure and its variation with alloy composition. As in other ternary alloys, the band parameters and the lattice constant can be “tuned” by controlling the alloy composition, opening the door to band-gap engineering and lattice matching in the context of epitaxially grown superlattices and het-erostructures. The random distribution of Mn atoms with a well-characterized antiferromagnetic Mn-Mn exchange interaction provides an ideal system for studying fundamental questions in disordered magnetism. The sp-d exchange interaction between the spins of band electrons and the localized moments of the Mn atoms constitutes a unique interplay between semiconductor physics and magnetism. This leads to unusual magneto-transport and magneto-optic phenomena such as an extremely large Faraday rotation, giant negative magneto-resistance, and a magnetic-field-induced metal-insulator transition. Finally, the potential technological importance of DMS is also being recognized. For example, the large Faraday rotation holds promise of DMS applications as optical isolators, modulators, and circulators. We will briefly introduce some of the exciting research problems offered by the study of DMS. More detailed information is available in several extensive reviews and compendia.

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Kacman, P. "Spin interactions in diluted magnetic semiconductors and magnetic semiconductor structures." Semiconductor Science and Technology 16, no. 4 (March 2, 2001): R25—R39. http://dx.doi.org/10.1088/0268-1242/16/4/201.

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Wang, Zewen, and Wanqi Jie. "Magnetic properties of diluted magnetic semiconductor Hg0.89Mn0.11Te." Journal of Wuhan University of Technology-Mater. Sci. Ed. 30, no. 6 (December 2015): 1130–33. http://dx.doi.org/10.1007/s11595-015-1283-6.

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MIURA, N., Y. H. MATSUDA, and T. IKAIDA. "MEGAGAUSS CYCLOTRON RESONANCE IN SEMICONDUCTOR NANOSTRUCTURES AND DILUTED MAGNETIC SEMICONDUCTORS." International Journal of Modern Physics B 16, no. 20n22 (August 30, 2002): 3399–404. http://dx.doi.org/10.1142/s0217979202014565.

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We report the latest results of cyclotron resonance experiments on semiconductor nanostructures and diluted magnetic semiconductors (DMS) in very high magnetic fields up to 600 T produced by magnetic flux compression and the single turn coiled technique. Many new features were observed in the very high field range, such as characteristic behavior of low dimensional electrons, carrier dynamics or electron-electron interaction effects in quantum wells and quantum dot samples. In PbSe/PdEuTe quantum dots, which were regularly arranged to form an fcc superlattice, we observed an absorption peak with a splitting and a wavelength dependence of the absorption intensity. In DMS, such as CdMnTe and InMnAs, change of the carrier effective mass with Mn doping was studied in detail. We found anomalous mass increase with doping of magnetic ions. The amount of the observed mass increase cannot be explained by the k·p theory and suggests the importance of d-s or d-p hybridization.

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Portavoce, A., S. Bertaina, O. Abbes, L. Chow, and V. Le Thanh. "About Ge(Mn) diluted magnetic semiconductor." Materials Letters 119 (March 2014): 68–70. http://dx.doi.org/10.1016/j.matlet.2014.01.021.

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Sun, Shih-Jye, and Hsiu-Hau Lin. "Diluted magnetic semiconductor at finite temperature." Physics Letters A 327, no. 1 (June 2004): 73–77. http://dx.doi.org/10.1016/j.physleta.2004.04.026.

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König, Jürgen, Hsiu-Hau Lin, and Allan H. MacDonald. "Theory of Diluted Magnetic Semiconductor Ferromagnetism." Physical Review Letters 84, no. 24 (June 12, 2000): 5628–31. http://dx.doi.org/10.1103/physrevlett.84.5628.

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Dissertations / Theses on the topic "Diluted magnetic semiconductor"

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Radovanovic, Pavle V. "Synthesis, spectroscopy, and magnetism of diluted magnetic semiconductor nanocrystals /." Thesis, Connect to this title online; UW restricted, 2004. http://hdl.handle.net/1773/8494.

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Kneip, Martin K. "Magnetization dynamics in diluted magnetic semiconductor heterostructures." kostenfrei, 2008. http://hdl.handle.net/2003/25822.

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Peleckis, Germanas. "Studies on diluted oxide magnetic semiconductors for spin electronic applications." Access electronically, 2006. http://www.library.uow.edu.au/adt-NWU/public/adt-NWU20070821.145447/index.html.

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Norberg, Nicholas S. "Magnetic nanocrystals : synthesis and properties of diluted magnetic semiconductor quantum dots /." Thesis, Connect to this title online; UW restricted, 2006. http://hdl.handle.net/1773/8625.

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Ankiewicz, Amélia Olga Gonçalves. "Properties of self-assembled diluted magnetic semiconductor nanostructures." Doctoral thesis, Universidade de Aveiro, 2010. http://hdl.handle.net/10773/2681.

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Doutoramento em Engenharia Física
Este trabalho centra-se na investigação da possibilidade de se conseguir um semicondutor magnético diluído (SMD) baseado em ZnO. Foi levado a cabo um estudo detalhado das propriedades magnéticas e estruturais de estruturas de ZnO, nomeadamente nanofios (NFs), nanocristais (NCs) e filmes finos, dopadas com metais de transição (MTs). Foram usadas várias técnicas experimentais para caracterizar estas estruturas, designadamente difracção de raios-X, microscopia electrónica de varrimento, ressonância magnética, SQUID, e medidas de transporte. Foram incorporados substitucionalmente nos sítios do Zn iões de Mn2+ e Co2+ em ambos os NFs e NCs de ZnO. Revelou-se para ambos os iões dopantes, que a incorporação é heterogénea, uma vez que parte do sinal de ressonância paramagnética electrónica (RPE) vem de iões de MTs em ambientes distorcidos ou enriquecidos com MTs. A partir das intensidades relativas dos espectros de RPE e de modificações da superfície, demonstra-se ainda que os NCs exibem uma estrutura core-shell. Os resultados, evidenciam que, com o aumento da concentração de MTs, a dimensão dos NCs diminui e aumentam as distorções da rede. Finalmente, no caso dos NCs dopados com Mn, obteve-se o resultado singular de que a espessura da shell é da ordem de 0.3 nm e de que existe uma acumulação de Mn na mesma. Com o objectivo de esclarecer o papel dos portadores de carga na medição das interacções ferromagnéticas, foram co-dopados filmes de ZnO com Mn e Al ou com Co e Al. Os filmes dopados com Mn, revelaram-se simplesmente paramagnéticos, com os iões de Mn substitucionais nos sítios do Zn. Por outro lado, os filmes dopados com Co exibem ferromagnetismo fraco não intrínseco, provavelmente devido a decomposição spinodal. Foram ainda efectuados estudos comparativos com filmes de ligas de Zn1-xFexO. Como era de esperar, detectaram-se segundas fases de espinela e de óxido de ferro nestas ligas; todas as amostras exibiam curvas de histerese a 300 K. Estes resultados suportam a hipótese de que as segundas fases são responsáveis pelo comportamento magnético observado em muitos sistemas baseados em ZnO. Não se observou nenhuma evidência de ferromagnetismo mediado por portadores de carga. As experiências mostram que a análise de RPE permite demonstrar directamente se e onde estão incorporados os iões de MTs e evidenciam a importância dos efeitos de superfície para dimensões menores que ~15 nm, para as quais se formam estruturas core-shell. As investigações realizadas no âmbito desta tese demonstram que nenhuma das amostras de ZnO estudadas exibiram propriedades de um SMD intrínseco e que, no futuro, são necessários estudos teóricos e experimentais detalhados das interacções de troca entre os iões de MTs e os átomos do ZnO para determinar a origem das propriedades magnéticas observadas.
This work focuses on the study of the possibility of achieving an intrinsic diluted magnetic semiconductor (DMS) based on ZnO. Detailed investigations of the structural and magnetic properties of transition metal (TM) doped ZnO structures, namely nanowires (NWs), nanocrystals (NCs), and thin films, were carried out. Various experimental techniques, such as X-ray diffraction, scanning electron microscopy, transmission electron microscopy, magnetic resonance, SQUID, and transport measurements were employed to structurally and magnetically characterize these samples. For both the ZnO NWs and NCs, Mn and Co ions were successfully incorporated as substitutional Mn2+ or Co2+, respectively, on Zn sites. For both types of doping, the TM incorporation was heterogeneous, since part of the electron paramagnetic resonance (EPR) spectrum stemmed from TM ions in distorted or TM enriched environments. Furthermore, in the case of the NCs, the relative intensities of the EPR spectra and surface modifications showed that the NCs exhibit a core-shell structure. Moreover, the results evidence decreasing NC size and increasing lattice distortions for increasing TM content. Finally, in the case of the Mn doped NCs, we were able to obtain the unique result that the shell thickness is very small, in the order of 0.3 nm, and that there is an accumulation of the Mn ions in the shell. To clarify the role of charge carriers in mediating ferromagnetic interactions, Mn, Al and Co, Al co-doped ZnO films were investigated. The Mn doped ZnO samples were clearly paramagnetic, the Mn ions being substitutional on Zn sites. On the other hand, the Co doped samples exhibited weak ferromagnetic order, which we believe to most probably arise from spinodal decomposition. Additionally, comparative investigations of Fe alloyed ZnO films were performed. As expected, second phases of spinel and iron oxide were found, and the samples exhibited ferromagnetic hysteresis loops at 300 K. These results support the indication that secondary phases are accountable for the magnetic behaviour detected in many ZnO systems. No evidence of carrier mediated ferromagnetism was observed. The experiments show that the EPR analysis allows us to directly demonstrate whether and where the TM ions are incorporated and evidence the importance of the surface effects at material dimensions below ~15 nm, for which coreshell structures are formed. The research carried out in the framework of this thesis demonstrates that for all studied samples, ZnO did not exhibit the behaviour of an intrinsic DMS, and in the future very detailed element specific investigations, both experimental and theoretical, of the exchange interactions of the transition metal ions with the ZnO host are necessary to assert the nature of the magnetic properties.

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Kneip, Martin [Verfasser]. "Magnetization Dynamics in Diluted Magnetic Semiconductor Heterostructures / Martin Kneip." München : GRIN Verlag, 2009. http://d-nb.info/1187730718/34.

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7

Dagnelund, Daniel. "Magneto-optical studies of dilute nitrides and II-VI diluted magnetic semiconductor quantum structures." Doctoral thesis, Linköpings universitet, Funktionella elektroniska material, 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-54695.

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This thesis work aims at a better understanding of magneto-optical properties of dilute nitrides and II-VI diluted magnetic semiconductor quantum structures. The thesis is divided into two parts. The first part gives an introduction of the research fields, together with a brief summary of the scientific results included in the thesis. The second part consists of seven scientific articles that present the main findings of the thesis work. Below is a short summary of the thesis. Dilute nitrides have been of great scientific interest since their development in the early 1990s, because of their unusual fundamental physical properties as well as their potential for device applications. Incorporation of a small amount of N in conventional Ga(In)As or Ga(In)P semiconductors leads to dramatic modifications in both electronic and optical properties of the materials. This makes the dilute nitrides ideally suited for novel optoelectronic devices such as light emitting devices for fiber-optic communications, highly efficient visible light emitting devices, multi-junction solar cells, etc. In addition, diluted nitrides open a window for combining Si-based electronics with III-V compounds-based optoelectronics on Si wafers, promising for novel optoelectronic integrated circuits. Full exploration and optimization of this new material system in device applications requires a detailed understanding of their physical properties. Papers I and II report detailed studies of effects of post-growth rapid thermal annealing (RTA) and growth conditions (i.e. presence of N ions, N2 flow, growth temperature and In alloying) on the formation of grown-in defects in Ga(In)NP. High N2 flow and bombardment of impinging N ions on grown sample surface is found to facilitate formation of defects, such as Ga interstitial (Gai) related defects, revealed by optically detected magnetic resonance (ODMR). These defects act as competing carrier recombination centers, which efficiently decrease photoluminescence (PL) intensity. Incorporation of a small amount of In (e.g. 5.1%) in GaNP seems to play a minor role in the formation of the defects. In GaInNP with 45% of In, on the other hand, the defects were found to be abundant. Effect of RTA on the defects is found to depend on initial configurations of Gai related defects formed during the growth. In Paper III, the first identification of an interfacial defect at a heterojunction between two semiconductors (i.e. GaP/GaNP) is presented. The interface nature of the defect is clearly manifested by the observation of ODMR lines originating from only two out of four equivalent <111> orientations. Based on its resolved hyperfine interaction between an unpaired electronic spin (S=1/2) and a nuclear spin (I=1/2), the defect is concluded to involve a P atom at its core with a defect/impurity partner along a <111> direction. Defect formation is shown to be facilitated by N ion bombardment. In Paper IV, the effects of post-growth hydrogenation on the efficiency of the nonradiative (NR) recombination centers in GaNP are studied. Based on the ODMR results, incorporation of H is found to increase the efficiency of the NR recombination via defects such as Ga interstitials. In Paper V, we report on our results from a systematic study of layered structures containing an InGaNAs/GaAs quantum well, by the optically detected cyclotron resonance (ODCR) technique. By monitoring PL emissions from various layers, the predominant ODCR peak is shown to be related to electrons in GaAs/AlAs superlattices. This demonstrates the role of the SL as an escape route for the carriers confined within the InGaNAs/GaAs single quantum well. The last two papers are within a relatively new field of spintronics which utilizes not only the charge (as in conventional electronics) but also the quantum mechanical property of spin of the electron. Spintronics offers a pathway towards integration of information storage, processing and communications into a single technology. Spintronics also promises advantages over conventional charge-based electronics since spin can be manipulated on a much shorter time scale and at lower cost of energy. Success of semiconductor-based spintronics relies on our ability to inject spin polarized electrons or holes into semiconductors, spin transport with minimum loss and reliable spin detection. In Papers VI and VII, we study the efficiency and mechanism for carrier/exciton and spin injection from a diluted magnetic semiconductor (DMS) ZnMnSe quantum well into nonmagnetic CdSe quantum dots (QD’s) by means of spin-polarized magneto PL combined with tunable laser spectroscopy. By means of a detailed rate equation analysis presented in Paper VI, the injected spin polarization is deduced to be about 32%, decreasing from 100% before the injection. The observed spin loss is shown to occur during the spin injection process. In Paper VII, we present evidence that energy transfer is the dominant mechanism for carrier/exciton injection from the DMS to the QD’s. This is based on the fact that carrier/exciton injection efficiency is independent of the width of the ZnSe tunneling barrier inserted between the DMS and QD’s. In sharp contrast, spin injection efficiency is found to be largely suppressed in the structures with wide barriers, pointing towards increasing spin loss.

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GURUNG, TAK BAHADUR. "OPTICAL IMAGING OF EXCITON MAGNETIC POLARONS IN DILUTED MAGNETIC SEMICONDUCTOR QUANTUM DOTS." University of Cincinnati / OhioLINK, 2006. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1155658535.

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Enaya, Hani. "Nonvolatile Spin Memory based on Diluted Magnetic Semiconductor and Hybrid Semiconductor Ferromagnetic Nanostructures." NCSU, 2008. http://www.lib.ncsu.edu/theses/available/etd-05222008-214407/.

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The feasibility of nonvolatile spin-based memory device concepts is explored. The first memory device concept utilizes the electrically controlled paramagnetic-ferromagnetic transition in a diluted magnetic semiconductor layer (quantum well or dot) when the ferromagnetism in the diluted magnetic semiconductor is mediated by itinerant holes. The specific structure under consideration consists of a diluted magnetic semiconductor quantum well (or quantum dot) and a nonmagnetic quantum well, which acts as a hole reservoir, separated by a permeable barrier. The quantitative analysis is done by calculating the free energy of the system. Formation of two stable states at the same external conditions, i.e., bistability, is found feasible at temperatures below the Curie temperature with proper band engineering. The effects of scaling the magnetic quantum well to quantum dot on bistability are analyzed. The bit retention time, i.e., lifetime, with respect to spontaneous leaps between the two stable states is calculated. The write/erase and read operations are discussed as well as the dissipation energy. Also, potential logic operations are proposed. In the second memory concept, the active region is a semiconductor quantum dot sharing an interface with a dielectric magnetic layer. The operating principle of the device is based on the spontaneous magnetic symmetry breaking due to exchange interaction between the magnetic ions in the magnetic layer and the spins of the itinerant holes in the quantum dot. Room temperature operation is possible given the availability of insulating ferromagnetic or antiferromagnetic materials whose Curie temperature is above room temperature. The specific range of material parameters where bistability is achieved is found. Analysis is extended to different quantum dot and magnetic dielectric materials and designs. Influence of material choice and design on the memory robustness, i.e., lifetime, is discussed.

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Stirner, Thomas. "Theory of excitons and magnetic polarons in diluted magnetic semiconductor quantum well structures." Thesis, University of Hull, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.262406.

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Books on the topic "Diluted magnetic semiconductor"

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Strutz, Thomas. High magnetic field electron spin-lattice relaxation in a diluted magnetic semiconductor: CdMnTe. Konstanz: Hartung-Gorre Verlag, 1991.

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Diluted magnetic semiconductors. Singapore: World Scientific, 1991.

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Averous, Michel. Semimagnetic Semiconductors and Diluted Magnetic Semiconductors. Boston, MA: Springer US, 1991.

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Averous, Michel, and Minko Balkanski, eds. Semimagnetic Semiconductors and Diluted Magnetic Semiconductors. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3776-2.

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International School of Materials Science and Technology (1990 Erice, Italy). Semimagnetic semiconductors and diluted magnetic semiconductors. New York: Plenum Press, 1991.

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Krevet, Rasmus. FIR-laser magnetooptics on Cr-based diluted magnetic semiconductors. Göttingen: Cuvillier Verlag, 1994.

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Jacek, Kossut, and SpringerLink (Online service), eds. Introduction to the Physics of Diluted Magnetic Semiconductors. Berlin, Heidelberg: Springer-Verlag Berlin Heidelberg, 2010.

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Gaj, Jan A., and Jacek Kossut, eds. Introduction to the Physics of Diluted Magnetic Semiconductors. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-15856-8.

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The physics of dilute magnetic alloys. Cambridge: Cambridge University Press, 2012.

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Hausenblas, Monika. Investigation of low energy excitations in novel semiconducting systems by means of far infrared magnetospectroscopy. Konstanz: Hartung-Gorre Verlag, 1992.

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Book chapters on the topic "Diluted magnetic semiconductor"

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Voos, Michel. "Semimagnetic Semiconductor Superlattices." In Semimagnetic Semiconductors and Diluted Magnetic Semiconductors, 237–51. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3776-2_10.

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Ramdas, A. K. "Magneto-optic Phenomena in Diluted Magnetic Semiconductors." In High Magnetic Fields in Semiconductor Physics II, 464–72. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-83810-1_71.

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Béjar, Manuel, David Sánchez, Gloria Platero, and A. H. Macdonald. "Spin Transport in Diluted Magnetic Semiconductor Superlattices." In Recent Trends in Theory of Physical Phenomena in High Magnetic Fields, 167–81. Dordrecht: Springer Netherlands, 2003. http://dx.doi.org/10.1007/978-94-010-0221-9_14.

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Chang, L. L., D. D. Awschalom, M. R. Freeman, and L. Vina. "Optical and Magnetic Properties of Diluted Magnetic Semiconductor Heterostructures." In Condensed Systems of Low Dimensionality, 165–79. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4684-1348-9_13.

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Kavokin, Kirill. "Coherent Spin Dynamics in Diluted-Magnetic Quantum Wells." In Optical Properties of Semiconductor Nanostructures, 255–68. Dordrecht: Springer Netherlands, 2000. http://dx.doi.org/10.1007/978-94-011-4158-1_27.

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Furdyna, J. K., S. Lee, M. Dobrowolska, T. Wojtowicz, and X. Liu. "Band-Offset Engineering in Magnetic/Non-Magnetic Semiconductor Quantum Structures." In Introduction to the Physics of Diluted Magnetic Semiconductors, 103–60. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-15856-8_4.

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Kutrowski, M., T. Wojtowicz, S. Kret, G. Karczewski, J. Kossut, R. Fiederling, B. König, et al. "Magnetooptical Properties of Graded Quantum Well Structures Made of Diluted Magnetic Semiconductors." In Optical Properties of Semiconductor Nanostructures, 237–46. Dordrecht: Springer Netherlands, 2000. http://dx.doi.org/10.1007/978-94-011-4158-1_25.

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Homonnay, Z., K. Nomura, E. Kuzmann, A. Vértes, Y. Hirose, and T. Hasegawa. "57Co-emission Mössbauer study on diluted magnetic semiconductor TiO2 films." In ICAME 2007, 483–88. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-78697-9_63.

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Murayama, A., and Y. Oka. "Optical Properties and Spin Dynamics of Diluted Magnetic Semiconductor Nanostructures." In Optical Properties of Condensed Matter and Applications, 393–415. Chichester, UK: John Wiley & Sons, Ltd, 2006. http://dx.doi.org/10.1002/0470021942.ch16.

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Stirner, T., and W. E. Hagston. "Dynamical aspects of exciton magnetic polaron formation in diluted magnetic semiconductor quantum wells." In Springer Proceedings in Physics, 270–71. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59484-7_123.

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Conference papers on the topic "Diluted magnetic semiconductor"

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Grubin, H. L. "Diluted magnetic semiconductor superlattices." In Defense and Security Symposium, edited by Dwight L. Woolard, R. Jennifer Hwu, Mark J. Rosker, and James O. Jensen. SPIE, 2006. http://dx.doi.org/10.1117/12.665364.

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Barmawi, M. "Spin injection using Diluted Magnetic Semiconductor." In 2009 International Conference on Instrumentation, Communications, Information Technology, and Biomedical Engineering (ICICI-BME). IEEE, 2009. http://dx.doi.org/10.1109/icici-bme.2009.5417237.

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Li, M. K., S. J. Lee, S. U. Yuldashev, G. Ihm, T. W. Kang, Jisoon Ihm, and Hyeonsik Cheong. "Phase Transition of Diluted Magnetic Semiconductor." In PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666578.

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MIURA, N., Y. H. MATSUDA, and T. IKAIDA. "MEGAGAUSS CYCLOTRON RESONANCE IN SEMICONDUCTOR NANOSTRUCTURES AND DILUTED MAGNETIC SEMICONDUCTORS." In Physical Phenomena at High Magnetic Fields - IV. WORLD SCIENTIFIC, 2002. http://dx.doi.org/10.1142/9789812777805_0137.

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Rani, Anita, Kulwinder Kaur, and Ranjan Kumar. "Cd0.9375Mn0.0625S diluted magnetic semiconductor: A DFT study." In ADVANCED MATERIALS AND RADIATION PHYSICS (AMRP-2015): 4th National Conference on Advanced Materials and Radiation Physics. AIP Publishing LLC, 2015. http://dx.doi.org/10.1063/1.4929249.

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Grubin, H. L., and Dwight L. Woolard. "Multilayered diluted magnetic semiconductor structures and 2DEG." In Optics East 2005, edited by James O. Jensen and Jean-Marc Thériault. SPIE, 2005. http://dx.doi.org/10.1117/12.633578.

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Zou, Jin, Yong Wang, Faxian Xiu, Zuoming Zhao, and Kang L. Wang. "Structural characteristics of GeMn diluted magnetic semiconductor nanostructures." In 2012 Conference on Optoelectronic and Microelectronic Materials & Devices (COMMAD). IEEE, 2012. http://dx.doi.org/10.1109/commad.2012.6472336.

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Oka, Yasuo, Kazumasa Takabayashi, Nobuhiro Takahashi, Eiji Shirado, Jinxi Shen, and Izuru Souma. "Magneto-optical properties of diluted magnetic semiconductor nanostructures." In 4th International Conference on Thin Film Physics and Applications, edited by Junhao Chu, Pulin Liu, and Yong Chang. SPIE, 2000. http://dx.doi.org/10.1117/12.408299.

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Pruthi, Navneet K., and Anita Rani. "Ab-initio study of diluted magnetic semiconductor Cd0.9375Mn0.0625Se." In DAE SOLID STATE PHYSICS SYMPOSIUM 2018. AIP Publishing, 2019. http://dx.doi.org/10.1063/1.5113297.

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Miyagawa, Hayato, Nakaba Funaki, Shyun Koshiba, Naoshi Takahashi, Masaichiro Mizumaki, and Motohiro Suzuki. "Magnetic moment in diluted magnetic semiconductor GaGdAs measured by HX-MCD." In 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)]. IEEE, 2016. http://dx.doi.org/10.1109/iciprm.2016.7528641.

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Reports on the topic "Diluted magnetic semiconductor"

1

El-Masry, Nadia A., and S. M. Bedair. Room Temperature Devices of Dilute Magnetic Semiconductors. Fort Belvoir, VA: Defense Technical Information Center, April 2005. http://dx.doi.org/10.21236/ada432896.

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2

Ullrich, Carsten A. Charge and Spin Transport in Dilute Magnetic Semiconductors. Office of Scientific and Technical Information (OSTI), July 2009. http://dx.doi.org/10.2172/960296.

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3

Zhang, Weidong, and Dwight Woolard. Magneto-Transpots in Interband Resonant Tunneling Diodes (I-RTDs) and Dilute Magnetic Semiconductor (DMS) I-RTDs. Fort Belvoir, VA: Defense Technical Information Center, March 2011. http://dx.doi.org/10.21236/ada577381.

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4

Lawniczak-Jablonska, K., [Institute of Physics, Warsaw (Poland)], J. J. Jia, and J. H. Underwood. Resonant inelastic scattering in dilute magnetic semiconductors by x-ray fluorescence spectroscopy. Office of Scientific and Technical Information (OSTI), April 1997. http://dx.doi.org/10.2172/603587.

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