Relevant bibliographies by topics / Diluted magnetic semiconductors

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  2. Dissertations / Theses
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Academic literature on the topic 'Diluted magnetic semiconductors'

Author: Grafiati
Published: 4 June 2021
Last updated: 12 February 2022

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Journal articles on the topic "Diluted magnetic semiconductors"

1

Samarth, N., and J. K. Furdyna. "Diluted Magnetic Semiconductors." MRS Bulletin 13, no. 6 (June 1988): 32–36. http://dx.doi.org/10.1557/s0883769400065477.

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Diluted magnetic semiconductors (DMS) are semiconducting alloys whose lattice is partly made of substitutional magnetic ions. The most extensively studied materials of this type are the alloys, in which a fraction of the group II sublattice is replaced at random by Mn. The entire family of ternary alloys, along with their crystal structure and corresponding ranges of composition, is listed in Table I. Over the past decade, these alloys have attracted a growing scientific interest because of new fundamental effects in semiconductor physics and magnetism in these materials and because of their potential applications in optical nonreciprocal devices, solid state lasers, flat panel displays, infrared detectors, and other optoelectronic applications.The increasing popularity of this field can be attributed to the broad variety of fascinating problems offered by the study of the alloys. To begin with, there is an interest in the semiconducting properties per se — for instance, the understanding of the electronic band structure and its variation with alloy composition. As in other ternary alloys, the band parameters and the lattice constant can be “tuned” by controlling the alloy composition, opening the door to band-gap engineering and lattice matching in the context of epitaxially grown superlattices and het-erostructures. The random distribution of Mn atoms with a well-characterized antiferromagnetic Mn-Mn exchange interaction provides an ideal system for studying fundamental questions in disordered magnetism. The sp-d exchange interaction between the spins of band electrons and the localized moments of the Mn atoms constitutes a unique interplay between semiconductor physics and magnetism. This leads to unusual magneto-transport and magneto-optic phenomena such as an extremely large Faraday rotation, giant negative magneto-resistance, and a magnetic-field-induced metal-insulator transition. Finally, the potential technological importance of DMS is also being recognized. For example, the large Faraday rotation holds promise of DMS applications as optical isolators, modulators, and circulators. We will briefly introduce some of the exciting research problems offered by the study of DMS. More detailed information is available in several extensive reviews and compendia.
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Samarth, N., and J. K. Furdyna. "Diluted magnetic semiconductors." Proceedings of the IEEE 78, no. 6 (June 1990): 990–1003. http://dx.doi.org/10.1109/5.56911.

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Furdyna, J. K. "Diluted magnetic semiconductors." Journal of Applied Physics 64, no. 4 (August 15, 1988): R29—R64. http://dx.doi.org/10.1063/1.341700.

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Hass, K. C., B. E. Larson, H. Ehrenreich, and A. E. Carlsson. "Magnetic interactions in diluted magnetic semiconductors." Journal of Magnetism and Magnetic Materials 54-57 (February 1986): 1283–84. http://dx.doi.org/10.1016/0304-8853(86)90819-x.

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de Jonge, W. J. M., and H. J. M. Swagten. "Magnetic properties of diluted magnetic semiconductors." Journal of Magnetism and Magnetic Materials 100, no. 1-3 (November 1991): 322–45. http://dx.doi.org/10.1016/0304-8853(91)90827-w.

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Kacman, P. "Spin interactions in diluted magnetic semiconductors and magnetic semiconductor structures." Semiconductor Science and Technology 16, no. 4 (March 2, 2001): R25—R39. http://dx.doi.org/10.1088/0268-1242/16/4/201.

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Blinowski, J., P. Kacman, and J. A. Majewski. "Superexchange in Diluted Magnetic Semiconductors." Materials Science Forum 182-184 (February 1995): 779–82. http://dx.doi.org/10.4028/www.scientific.net/msf.182-184.779.

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Ivanov, V. A. "Diluted magnetic semiconductors and spintronics." Bulletin of the Russian Academy of Sciences: Physics 71, no. 11 (November 2007): 1610–12. http://dx.doi.org/10.3103/s1062873807110433.

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Twardowski, A. "Diluted Magnetic III-V Semiconductors." Acta Physica Polonica A 98, no. 3 (September 2000): 203–16. http://dx.doi.org/10.12693/aphyspola.98.203.

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Munekata, H., H. Ohno, S. von Molnar, Armin Segmüller, L. L. Chang, and L. Esaki. "Diluted magnetic III-V semiconductors." Physical Review Letters 63, no. 17 (October 23, 1989): 1849–52. http://dx.doi.org/10.1103/physrevlett.63.1849.

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Dissertations / Theses on the topic "Diluted magnetic semiconductors"

1

Radovanovic, Pavle V. "Synthesis, spectroscopy, and magnetism of diluted magnetic semiconductor nanocrystals /." Thesis, Connect to this title online; UW restricted, 2004. http://hdl.handle.net/1773/8494.

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Peleckis, Germanas. "Studies on diluted oxide magnetic semiconductors for spin electronic applications." Access electronically, 2006. http://www.library.uow.edu.au/adt-NWU/public/adt-NWU20070821.145447/index.html.

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Wang, Weigang. "Spin-dependent transport in magnetic tunnel junctions and diluted magnetic semiconductors." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 184 p, 2009. http://proquest.umi.com/pqdweb?did=1654494821&sid=3&Fmt=2&clientId=8331&RQT=309&VName=PQD.

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Tran, Lien. "InSb semiconductors and (In,Mn)Sb diluted magnetic semiconductors." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2011. http://dx.doi.org/10.18452/16334.

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Im Rahmen dieser Arbeit wurden InSb- und verdünnt-magnetische In_{1-x}Mn_xSb Filme mittels Gasquellen-Molekularstrahlepitaxie hergestellt und deren strukturelle und elektronische Eigenschaften untersucht. Die 2 μm InSb-Dünnschichten wurden sowohl auf GaAs(001)-Substrat als auch um 4° in Richtung [110] fehlgeschnittenem Si(001)-Substrat hergestellt. Optimierte InSb-Schichten direkt auf GaAs zeigen eine hohe kristalline Qualität, niedriges Rauschen und eine Elektronenbeweglichkeit von 41100 cm^2/Vs bei 300 K. Die Ladungsträgerkonzentration beträgt etwa 2,9e16 cm^{-3}. Um InSb-Dünnschichten guter Qualität auf Si-Substrat zu realisieren, wurden fehlgeschnittene Substrate benutzt. Zur Reduzierung der Gitterfehlanpassung wurden Pufferschichten gewachsen. Eine Elektronenmobilität von 24000 cm^2/Vs und Ladungsträgerkonzentration von 2,6e16 cm^{-3} wurden bei 300 K nachgewiesen. Diese Probe enthält ein 0,06 μm GaAs/AlSb-Supergitter als Pufferschicht (Wachstumstemperatur war 340°C). Diese Probe zeigt der höheren Dichte der Microtwins und Stapelfehler als auch den Threading-Versetzungen in der schnittstellennahen Region geschuldet. Die Deep-Level Rauschspektren zeigen die Existenz von Deep-Levels sowohl in GaAs- als auch in Si-basierten Proben. Die InSb-Filme auf Si-Substrat zeigen einen kleineren Hooge-Faktor im Vergleich zu Schichten auf GaAs (300 K). Unter Anwendung der optimierten Wachstumsbedingungen für InSb/GaAs wurden verdünnt-magnetische In_{1-x}Mn_xSb-Schichten (bis zum 1% Mangan) auf GaAs (001)-realisiert. Mn verringert die Gitterkonstante und damit den Grad der Relaxation von (In,Mn)Sb-Filmen. In den Proben befindet sich Mn in zwei magnetischen Formen, sowohl als verdünnt-magnetischer Halbleiter (In,Mn)Sb, als auch als MnSb-Cluster. Die Cluster dominieren auf der Oberfläche. Die Curie-Temperatur, Tc, unterscheidet sich für die beiden Formen. Für (In,Mn)Sb ist Tc kleiner als 50 K. Die MnSb-Cluster zeigen dagegen ein Tc über 300 K.
This dissertation describes the growth by molecular beam epitaxy and the characterization of the semiconductor InSb and the diluted magnetic semiconductor (DMS) In_{1-x}Mn_xSb. The 2 µm-thick InSb films were grown on GaAs (001) substrate and Si (001) offcut by 4° toward (110) substrate. After optimizing the growth conditions, the best InSb films grown directly on GaAs results in a high crystal quality, low noise, and an electron mobility of 41100 cm^2/V s Vs with associated electron concentration of 2.9e16 cm^{-3} at 300 K. In order to successfully grow InSb on Si, tilted substrates and the insertion of buffer layers were used. An electron mobility of 24000 cm^2/V s measured at 300 K, with an associated carrier concentration of 2.6e16 cm^{-3} is found for the best sample that was grown at 340°C with a 0.06 μm-thick GaSb/AlSb superlattice buffer layer. The sample reveals a density of microtwins and stacking faults as well as threading dislocations in the near-interface. Deep level noise spectra indicate the existence of deep levels in both GaAs and Si-based samples. The Si-based samples exhibit the lowest Hooge factor at 300 K, lower than the GaAs-based samples. Taking the optimized growth conditions of InSb/GaAs, the DMS In_{1-x}Mn_xSb/GaAs is prepared by adding Mn (x < 1%) into the InSb during growth. Mn decreases the lattice constant as well as the degree of relaxation of (In,Mn)Sb films. Mn also distributes itself to result in two different and distinct magnetic materials: the DMS (In,Mn)Sb and clusters MnSb. The MnSb clusters dominate only on the surface. For the DMS alloy (In,Mn)Sb, the measured values of Curie temperature Tc appears to be smaller than 50 K, whereas it is greater than 300 K for the MnSb clusters.
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Mishra, Subodha. "Theory of photo-induced ferro-magnetism in dilute magnetic semiconductors." Diss., Columbia, Mo. : University of Missouri-Columbia, 2006. http://hdl.handle.net/10355/4413.

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Thesis (Ph. D.) University of Missouri-Columbia, 2006.
The entire dissertation/thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file (which also appears in the research.pdf); a non-technical general description, or public abstract, appears in the public.pdf file. Title from title screen of research.pdf file (viewed on August 6, 2007) Includes bibliographical references.
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Horsfall, Alton Barrett. "Electrical and magnetic properties of II-VI diluted magnetic semiconductors." Thesis, Durham University, 1997. http://etheses.dur.ac.uk/4984/.

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The electrical and magnetic properties of MOVPE grown epitaxial layers of Hg(_1-x)Mn(_x)Te layers has been investigated using a number of techniques. The samples have been grown by the Inter Diffused Multilayer Process, (IMP) on (100) semi insulating GaAs substrates with ZnTe and CdTe buffer layers. The samples have been shown to show a number of phenomena nopt observed in the bulk material, such as an anomaly in the resistivity, rnagnetoresistance related to the intrinsic magnetism of the material, and saturation of the room temperature magnetisation. In general the samples are of a highly compensated nature with the value of |R(_H)e|(^-1) varying between l0(^14) and 5xI0(^17) cm(^-3) at 20K, the Hall mobilities varying between 8 and 3.5x10(^5) cm(^2)V(^-1)s(^-1) at 20K. Magnetically, the samples generally show a paramagnetic signal that is swamped by the diamagnetic background of the substrate and buffer layers. The paramagnetisrn can be well modelled using a Curie Weiss fit. A number of the samples show a saturation in the magnetisation, which, has been explained via the use of vacancy ordering within MnTe regions in the sample. The susceptibility of the samples has been investigated using a Faraday balance system, and this data has been fitted using; a cluster model for Mn ions within the sample. The photomagnetisation of Cd(_0.9)Mn(_0.1)Te:In has been investigated using a faraday balance system, and modelled using the work of Dietl and Sample, to calculate the number of polarons that had formed on donors in the sample, ΔN(_D)(^MAG) = 1.28x10(^15)cm(^-3). The number of donors in the sample has been measured by means of the Hall effect, ΔN(_D)(^ELEC) = 1.92x10(^15)cm(^-3), and this value compared to that obtained from the model. We have proposed a model to explain this discrepancy based on the concept of band tails in the impurity band.
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Huang, Lunmei. "Computational Material Design : Diluted Magnetic Semiconductors for Spintronics." Doctoral thesis, Uppsala : Acta Universitatis Upsaliensis, 2007. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-7800.

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Norberg, Nicholas S. "Magnetic nanocrystals : synthesis and properties of diluted magnetic semiconductor quantum dots /." Thesis, Connect to this title online; UW restricted, 2006. http://hdl.handle.net/1773/8625.

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Gatuna, Ngigi wa. "Intrinsic vacancy chalcogenides as dilute magnetic semiconductors : theoretical investigation of transition-metal doped gallium selenide /." Thesis, Connect to this title online; UW restricted, 2007. http://hdl.handle.net/1773/10595.

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Miao, Jingqi. "The theory of magnetic polarons and magnetic field effect in diluted magnetic semiconductors." Thesis, University of Hull, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.264955.

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Books on the topic "Diluted magnetic semiconductors"

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Diluted magnetic semiconductors. Singapore: World Scientific, 1991.

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Averous, Michel. Semimagnetic Semiconductors and Diluted Magnetic Semiconductors. Boston, MA: Springer US, 1991.

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Averous, Michel, and Minko Balkanski, eds. Semimagnetic Semiconductors and Diluted Magnetic Semiconductors. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3776-2.

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International School of Materials Science and Technology (1990 Erice, Italy). Semimagnetic semiconductors and diluted magnetic semiconductors. New York: Plenum Press, 1991.

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Jacek, Kossut, and SpringerLink (Online service), eds. Introduction to the Physics of Diluted Magnetic Semiconductors. Berlin, Heidelberg: Springer-Verlag Berlin Heidelberg, 2010.

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Krevet, Rasmus. FIR-laser magnetooptics on Cr-based diluted magnetic semiconductors. Göttingen: Cuvillier Verlag, 1994.

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Gaj, Jan A., and Jacek Kossut, eds. Introduction to the Physics of Diluted Magnetic Semiconductors. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-15856-8.

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Strutz, Thomas. High magnetic field electron spin-lattice relaxation in a diluted magnetic semiconductor: CdMnTe. Konstanz: Hartung-Gorre Verlag, 1991.

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Hausenblas, Monika. Investigation of low energy excitations in novel semiconducting systems by means of far infrared magnetospectroscopy. Konstanz: Hartung-Gorre Verlag, 1992.

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European Workshop on II-VI Compounds (3rd 1994 Linz, Austria). II-IV compounds and semimagnetic semiconductors: Joint proceedings of the Third European Workshop on II-IV Compounds, Linz, Austria, 26-28 September 1994 and the Fourth International Workshop on Semimagnetic (Diluted Magnetic) Semiconductors, Linz, Austria, 26-28 September 1994. Edited by Heinrich H, Mullin J. B, and International Workshop on Semimagnetic (Diluted Magnetic) Semiconductors (4th : 1994 : Linz, Austria). Aedermannsdorf, Switzerland: Trans Tech Publications, 1995.

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Book chapters on the topic "Diluted magnetic semiconductors"

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Wolff, P. A. "Bound Magnetic Polarons in Diluted Magnetic Semiconductors." In Semimagnetic Semiconductors and Diluted Magnetic Semiconductors, 147–68. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3776-2_6.

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Twardowski, A. "Magnetism of Fe-Based Diluted Magnetic Semiconductors." In Semimagnetic Semiconductors and Diluted Magnetic Semiconductors, 253–71. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3776-2_11.

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Hass, K. C. "Band Structure and Theory of Magnetic Interactions in Diluted Magnetic Semiconductors." In Semimagnetic Semiconductors and Diluted Magnetic Semiconductors, 59–82. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3776-2_3.

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de Jonge, W. J. M., and H. J. M. Swagten. "Magnetic Behavior of Diluted Magnetic Semiconductors." In NATO ASI Series, 419–38. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4899-2590-9_48.

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Takeyama, S. "Magnetic Polarons in Diluted Magnetic Semiconductors." In Springer Series in Solid-State Sciences, 179–209. Berlin, Heidelberg: Springer Berlin Heidelberg, 2000. http://dx.doi.org/10.1007/978-3-662-04143-7_6.

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Dietl, T., M. Sawicki, J. Jaroszyński, J. Wróbel, T. Wojtowicz, and A. Lenard. "Localization in Diluted Magnetic Semiconductors." In Localization and Confinement of Electrons in Semiconductors, 127–36. Berlin, Heidelberg: Springer Berlin Heidelberg, 1990. http://dx.doi.org/10.1007/978-3-642-84272-6_14.

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Kossut, J., and W. Dobrowolski. "Properties of diluted magnetic semiconductors." In Narrow-gap II–VI Compounds for Optoelectronic and Electromagnetic Applications, 401–29. Boston, MA: Springer US, 1997. http://dx.doi.org/10.1007/978-1-4613-1109-6_13.

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Konig, Jürgen, Hsiu-Hau Lin, and Allan H. MacDonald. "Ferromagnetism in Diluted Magnetic Semiconductors." In Springer Proceedings in Physics, 232–33. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59484-7_104.

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Averous, M. "Background on Semimagnetic Semiconductors." In Semimagnetic Semiconductors and Diluted Magnetic Semiconductors, 1–22. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3776-2_1.

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Voos, Michel. "Semimagnetic Semiconductor Superlattices." In Semimagnetic Semiconductors and Diluted Magnetic Semiconductors, 237–51. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3776-2_10.

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Conference papers on the topic "Diluted magnetic semiconductors"

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Podoleanu, Adrian Gh, Radu G. Cucu, and David A. Jackson. "Magnetic field sensors utilizing diluted magnetic semiconductors." In SIOEL: Sixth Symposium of Optoelectronics, edited by Teodor Necsoiu, Maria Robu, and Dan C. Dumitras. SPIE, 2000. http://dx.doi.org/10.1117/12.378733.

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Li, M. K., S. J. Lee, S. U. Yuldashev, G. Ihm, T. W. Kang, Jisoon Ihm, and Hyeonsik Cheong. "Phase Transition of Diluted Magnetic Semiconductor." In PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666578.

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Du, Y. W., F. M. Zhang, D Wu, and S. J. Xiong. "Spin transport in Diluted Magnetic Semiconductors." In 2010 IEEE 3rd International Nanoelectronics Conference (INEC). IEEE, 2010. http://dx.doi.org/10.1109/inec.2010.5424472.

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Takahashi, Masao. "Transport properties of diluted magnetic semiconductors." In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994129.

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MIURA, N., Y. H. MATSUDA, and T. IKAIDA. "MEGAGAUSS CYCLOTRON RESONANCE IN SEMICONDUCTOR NANOSTRUCTURES AND DILUTED MAGNETIC SEMICONDUCTORS." In Physical Phenomena at High Magnetic Fields - IV. WORLD SCIENTIFIC, 2002. http://dx.doi.org/10.1142/9789812777805_0137.

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Krevet, R. "Magnetooptics on chromium-based diluted magnetic semiconductors." In 17th International Conference on Infrared and Millimeter Waves. SPIE, 2017. http://dx.doi.org/10.1117/12.2298229.

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Stephanovich, Vladimir A., Elena V. Kirichenko, and Yuri G. Semenov. "Photoinduced magnetization wave in diluted magnetic semiconductors." In Integrated Optoelectronic Devices 2006, edited by Kong-Thon Tsen, Jin-Joo Song, and Hongxing Jiang. SPIE, 2006. http://dx.doi.org/10.1117/12.639900.

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ICHIMURA, M., K. TANIKAWA, S. TAKAHASHI, G. BASKARAN, and S. MAEKAWA. "MAGNETIC IMPURITY STATES AND FERROMAGNETIC INTERACTION IN DILUTED MAGNETIC SEMICONDUCTORS." In Proceedings of the 8th International Symposium. WORLD SCIENTIFIC, 2006. http://dx.doi.org/10.1142/9789812773210_0038.

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Stolichnov, I., S. W. E. Riester, H. J. Trodahl, N. Setter, A. W. Rushforth, K. W. Edmonds, R. P. Campion, C. T. Foxon, B. L. Gallagher, and T. Jungwirth. "Ferroelectric control of ferromagnetism in diluted magnetic semiconductors." In 2008 17th IEEE International Symposium on the Applications of Ferroelectrics (ISAF). IEEE, 2008. http://dx.doi.org/10.1109/isaf.2008.4693725.

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Yamamoto, Y. "ESR study of diluted magnetic semiconductor (Ga,Cr)As." In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994134.

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Reports on the topic "Diluted magnetic semiconductors"

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El-Masry, Nadia A., and S. M. Bedair. Room Temperature Devices of Dilute Magnetic Semiconductors. Fort Belvoir, VA: Defense Technical Information Center, April 2005. http://dx.doi.org/10.21236/ada432896.

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Ullrich, Carsten A. Charge and Spin Transport in Dilute Magnetic Semiconductors. Office of Scientific and Technical Information (OSTI), July 2009. http://dx.doi.org/10.2172/960296.

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Zhang, Weidong, and Dwight Woolard. Magneto-Transpots in Interband Resonant Tunneling Diodes (I-RTDs) and Dilute Magnetic Semiconductor (DMS) I-RTDs. Fort Belvoir, VA: Defense Technical Information Center, March 2011. http://dx.doi.org/10.21236/ada577381.

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Lawniczak-Jablonska, K., [Institute of Physics, Warsaw (Poland)], J. J. Jia, and J. H. Underwood. Resonant inelastic scattering in dilute magnetic semiconductors by x-ray fluorescence spectroscopy. Office of Scientific and Technical Information (OSTI), April 1997. http://dx.doi.org/10.2172/603587.

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