Relevant bibliographies by topics / Diluted magnetic semiconductors - Optical properties

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers

Academic literature on the topic 'Diluted magnetic semiconductors - Optical properties'

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Published: 4 June 2021
Last updated: 17 February 2022

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Journal articles on the topic "Diluted magnetic semiconductors - Optical properties"

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Samarth, N., and J. K. Furdyna. "Diluted Magnetic Semiconductors." MRS Bulletin 13, no. 6 (June 1988): 32–36. http://dx.doi.org/10.1557/s0883769400065477.

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Diluted magnetic semiconductors (DMS) are semiconducting alloys whose lattice is partly made of substitutional magnetic ions. The most extensively studied materials of this type are the alloys, in which a fraction of the group II sublattice is replaced at random by Mn. The entire family of ternary alloys, along with their crystal structure and corresponding ranges of composition, is listed in Table I. Over the past decade, these alloys have attracted a growing scientific interest because of new fundamental effects in semiconductor physics and magnetism in these materials and because of their potential applications in optical nonreciprocal devices, solid state lasers, flat panel displays, infrared detectors, and other optoelectronic applications.The increasing popularity of this field can be attributed to the broad variety of fascinating problems offered by the study of the alloys. To begin with, there is an interest in the semiconducting properties per se — for instance, the understanding of the electronic band structure and its variation with alloy composition. As in other ternary alloys, the band parameters and the lattice constant can be “tuned” by controlling the alloy composition, opening the door to band-gap engineering and lattice matching in the context of epitaxially grown superlattices and het-erostructures. The random distribution of Mn atoms with a well-characterized antiferromagnetic Mn-Mn exchange interaction provides an ideal system for studying fundamental questions in disordered magnetism. The sp-d exchange interaction between the spins of band electrons and the localized moments of the Mn atoms constitutes a unique interplay between semiconductor physics and magnetism. This leads to unusual magneto-transport and magneto-optic phenomena such as an extremely large Faraday rotation, giant negative magneto-resistance, and a magnetic-field-induced metal-insulator transition. Finally, the potential technological importance of DMS is also being recognized. For example, the large Faraday rotation holds promise of DMS applications as optical isolators, modulators, and circulators. We will briefly introduce some of the exciting research problems offered by the study of DMS. More detailed information is available in several extensive reviews and compendia.
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Archer, Thomas, Chaitanya Das Pemmaraju, and Stefano Sanvito. "Magnetic properties of ZrO2-diluted magnetic semiconductors." Journal of Magnetism and Magnetic Materials 316, no. 2 (September 2007): e188-e190. http://dx.doi.org/10.1016/j.jmmm.2007.02.085.

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Kagami, K., M. Takahashi, and K. Kubo. "Transport and Optical Properties of Diluted Magnetic Semiconductors." Journal of Superconductivity 18, no. 1 (February 2005): 121–26. http://dx.doi.org/10.1007/s10948-005-2162-8.

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Ando, K., H. Saito, Zhengwu Jin, T. Fukumura, M. Kawasaki, Y. Matsumoto, and H. Koinuma. "Magneto-optical properties of ZnO-based diluted magnetic semiconductors." Journal of Applied Physics 89, no. 11 (June 2001): 7284–86. http://dx.doi.org/10.1063/1.1356035.

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Hoang, Anh-Tuan. "Optical properties of diluted magnetic semiconductors in coherent potential approximation." Physica B: Condensed Matter 403, no. 10-11 (May 2008): 1803–7. http://dx.doi.org/10.1016/j.physb.2007.10.015.

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Lakshmi, Y. Kalyana, K. Srinivas, B. Sreedhar, M. Manivel Raja, M. Vithal, and P. Venugopal Reddy. "Structural, optical and magnetic properties of nanocrystalline Zn0.9Co0.1O-based diluted magnetic semiconductors." Materials Chemistry and Physics 113, no. 2-3 (February 2009): 749–55. http://dx.doi.org/10.1016/j.matchemphys.2008.08.021.

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Ahmad, Naseem, Shakeel Khan, and Mohd Mohsin Nizam Ansari. "Optical, dielectric and magnetic properties of Mn doped SnO2 diluted magnetic semiconductors." Ceramics International 44, no. 13 (September 2018): 15972–80. http://dx.doi.org/10.1016/j.ceramint.2018.06.024.

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Ohe, Jun-ichiro, Yoshihiro Tomoda, Nejat Bulut, Ryotaro Arita, Kazuma Nakamura, and Sadamichi Maekawa. "Magnetic properties of diluted magnetic semiconductors: Quantum Monte Carlo approach." Journal of Magnetism and Magnetic Materials 322, no. 9-12 (May 2010): 1192–94. http://dx.doi.org/10.1016/j.jmmm.2009.06.037.

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Hwang, Y. H., H. K. Kim, S. Cho, Y. H. Um, and H. Y. Park. "Magneto-optical properties in diluted magnetic semiconductors Cd0.65−yMn0.35NiyTe single crystals." Journal of Magnetism and Magnetic Materials 310, no. 2 (March 2007): 2702–4. http://dx.doi.org/10.1016/j.jmmm.2006.10.999.

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Chuev, M. A., B. A. Aronzon, E. M. Pashaev, M. V. Koval’chuk, I. A. Subbotin, V. V. Rylkov, V. V. Kvardakov, P. G. Medvedev, B. N. Zvonkov, and O. V. Vikhrova. "Diluted magnetic semiconductors: Actual structure and magnetic and transport properties." Russian Microelectronics 37, no. 2 (March 2008): 73–88. http://dx.doi.org/10.1134/s1063739708020017.

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Dissertations / Theses on the topic "Diluted magnetic semiconductors - Optical properties"

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Sun, Yongke. "Theoretical studies of the electronic, magneto-optical, and transport properties of diluted magnetic semiconductors." [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0011604.

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Mokhtari, Abbas. "On the growth, magnetic properties and Magneto-Optical Studies of ZnO based Dilute Magnetic Semiconductors and Magnetite." Thesis, University of Sheffield, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.500218.

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Mendes, Udson Cabral 1984. "Electronic and optical properties of diluted magnetic semiconductors quantum wells and quantum dots = Propriedades eletrônicas e ópticas de poços quânticos e pontos quânticos de semicondutores magnéticos diluídos." [s.n.], 2014. http://repositorio.unicamp.br/jspui/handle/REPOSIP/276958.

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Orientador: José Antônio Brum
Tese (doutorado) - Universidade Estadual de Campinas, Instituto de Física Gleb Wataghin
Made available in DSpace on 2018-08-24T13:58:03Z (GMT). No. of bitstreams: 1 Mendes_UdsonCabral_D.pdf: 12052104 bytes, checksum: 67d2d70413e86cd914ef0145b639ff5b (MD5) Previous issue date: 2014
Resumo: Nesta tese, investigamos teoricamente as propriedades eletrônicas e ópticas de poços quânticos e pontos quânticos de semicondutores magnéticos diluídos. Este estudo é fortemente motivado por muitos resultados experimentais sobre as propriedades ópticas desse materiais. Usando a teoria do funcional da densidade dependente de spin descrevemos os estados eletrônicos como função do campo magnético externo para poços quânticos que possuem barreiras dopadas com impurezas magnéticas. Nosso modelo leva em conta os efeitos de muitos-corpos do gás de buracos e as interações entre portadores e os íons magnéticos. Comparamos nossos resultados com os dados experimentais disponíveis, que apresentam forte oscilações da luz polarizada circularmente como função do campo magnético. Nossos resultados apresentam excelente concordância qualitativa e quantitativa com os resultados experimentais. Mostramos que os efeitos de troca do gás de buraco são responsáveis pela forte oscilação observada na fotoluminescência. Também realizamos uma investigação sistemática dos parâmetros da heteroestrutura afim de aumentar a interação de troca entre portadores e íons de Mn. Com o nosso modelo entedemos os diferentes regimes de relaxação de spin do elétron em poços quânticos com barreiras dopadas com impurezas magnéticas. Nós também investigamos as propriedades eletrônicas e ópticas de pontos quânticos carregados dopados com uma única impureza magnética em seu centro. Usando métodos de diagonalização exata mostramos que os elétrons que não estão diretamente acoplados com o íon de Mn acoplam-se via uma interação indireta que é mediada pela interação elétron-elétron. Este acoplamento indireto entre elétrons e Mn pode ser tanto ferromagnético quanto antiferromagnético dependendo de ambos confinamento e número de camadas eletrônicas confinadas no ponto quântico. Demonstramos que este acoplamento indireto é um efeito importante mesmo quanto o íon de Mn não esta no centro do ponto quântico. O acoplamento indireto existe independentemente do tipo de interação direta entre portadores e a impureza magnética. Também extendemos a teoria de fotoluminescência para essa heteroestrutura. Observamos que a interação indireta entre portadores e íon magnético gera uma estrutura fina em ambos os estados iniciais e finais da emissão, o que nos permite determinar o número de camadas confinadas no ponto quântico e o spin eletrônico. Com esse método de diagonalização exata, explicamos a origem da estrutura fina do biexciton confinado em um ponto quântico dopado com uma única impureza magnética
Abstract: In this thesis, we theoretically investigate the electronic and optical properties of diluted magnetic semiconductors quantum wells and quantum dots. This is strongly motivated by many experimental results on the optical properties of these materials. Using spin-density functional theory we described the electronic states as a function of the external magnetic field for quantum wells which have barriers doped with magnetic impurities. Our model takes into account the many-body effects of the two-dimensional hole gas and the interaction between carriers and the magnetic ions. We compare our findings with the available experimental data, which shows strong oscillations in the circularly polarized light as a function of the magnetic field. Our results show excellent qualitative and quantitative agreement with the experimental data. We show that the hole gas exchange effects are responsible for the strong oscillations observed in the photoluminescence. We perform a systematic investigation of the heterostructure parameters in order to enhance the carriers-Mn exchange interaction. With our model we understand the different regime of the electron¿s spin relaxation in quantum wells with barriers doped with Mn impurities. We also investigate the electronic and optical properties of charged quantum dots doped with a single magnetic impurity in its center. Using an exact diagonalization method we show that the electrons that are not directly coupled with Mn do so via an indirect coupling mediated by electron-electron interaction. This indirect electron-Mn coupling can be either ferromagnetic or antiferromagnetic depending on both quantum dot confinement and the number of electronic confined shells. We also demonstrate that the indirect electron-Mn coupling is an important effect even when Mn is off-center. This coupling exists independently of the type of the direct interaction between carriers and Mn impurity. We also extend the theory of photoluminescence for charged quantum dots containing a single magnetic impurity. We show that the indirect interaction between carriers and magnetic ion generates a fine structure in both initial and final states of the emission, which allows us to determinate the number of confined shells in the quantum dots and the electronic spins. Whit this exact diagonalizationmethod, we explain the origin of the fine structure of a biexciton confined in quantum dot containing a single Mn impurity
Doutorado
Física
Doutor em Ciências
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Ramanathan, Sivakumar. "Optical and electrical properties of compound and transition metal doped compound semiconductor nanowires." VCU Scholars Compass, 2009. http://scholarscompass.vcu.edu/etd/1667.

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Nanotechnology is the science and engineering of creating functional materials by precise control of matter at nanometer (nm) length scale and exploring novel properties at that scale. It is vital to understand the quantum mechanical phenomena manifested at nanometer scale dimensions since that will enable us to precisely engineer quantum mechanical properties to realize novel device functionalities. This dissertation investigates optical and electronic properties of compound and transition metal doped compound semiconductor nanowires with a view to exploiting them for a wide range of applications in semiconductor electronic and optical devices. In this dissertation work, basic concepts of optical and electronic properties at low dimensional structures will be discussed in chapter 1. Chapter 2 discusses the nanofabrication technique employed to fabricate highly ordered nanowires. Using this method, which is based on electrochemical self-assembly techniques, we can fabricate highly ordered and size controlled nanowires and quantum dots of different materials. In Chapter 3, we report size dependent fluorescence spectroscopy of ZnSe and Mn doped ZnSe nanowires fabricated by the above method. The nanowires exhibit blue shift in the emission spectrum due to quantum confinement effect, which increases the effective bandgap of the semiconductor. We found that the fluorescence spectrum of Mn doped ZnSe nanowires shows high luminescence efficiency, which seems to increase with increasing Mn concentration. These results are highly encouraging for applications in multi spectral displays. Chapter 4 investigates field emission results of highly ordered 50 nm tapered ZnO nanowires that were also fabricated by electrochemical self-assembly. Subsequent to fabrication, the nanowires tips are exposed by chemical etching which renders the tips conical in shape. This tapered shape concentrates the electric field lines at the tip of the wires, and that, in turn, increases the emission current density while lowering the threshold field for the onset of field emission. Measurement of the Fowler-Nordheim tunneling current carried out in partial vacuum indicates that the threshold electric field for field emission in 50-nm diameter ZnO nanowires is 15 V/µm. In this study we identified the key constraint that can increase the threshold field and reduce emission current density. In Chapter 5 we report optical and magnetic measurement of Mn-doped ZnO nanowires. Hysterisis measurements carried out at various temperatures show a ferromagnetic behavior with a Curie temperature of ~ 200 K. We also studied Mn-doping of the ZnO nanowires. The room temperature fluorescence spectroscopy of Mn-doped ZnO nanowires shows a red-shift in the spectra compared to the undoped ZnO nanowires possibly due to strain introduced by the dopants in the nanowires. Finally, in Chapter 6, we report our study of the ensemble averaged transverse spin relaxation time (T2*) in InSb thin films and nanowires using electron spin resonance (ESR) measurement. Unfortunately, the nanowires contained too few spins to produce a detectable signal in our apparatus, but the thin films contained enough spins (> 109/cm2) to produce a measurable ESR signal. We found that the T2* decreases rapidly with increasing temperature between 3.5 K and 20 K, which indicates that spin-dephasing is primarily caused by spin-phonon interactions.
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Horsfall, Alton Barrett. "Electrical and magnetic properties of II-VI diluted magnetic semiconductors." Thesis, Durham University, 1997. http://etheses.dur.ac.uk/4984/.

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The electrical and magnetic properties of MOVPE grown epitaxial layers of Hg(_1-x)Mn(_x)Te layers has been investigated using a number of techniques. The samples have been grown by the Inter Diffused Multilayer Process, (IMP) on (100) semi insulating GaAs substrates with ZnTe and CdTe buffer layers. The samples have been shown to show a number of phenomena nopt observed in the bulk material, such as an anomaly in the resistivity, rnagnetoresistance related to the intrinsic magnetism of the material, and saturation of the room temperature magnetisation. In general the samples are of a highly compensated nature with the value of |R(_H)e|(^-1) varying between l0(^14) and 5xI0(^17) cm(^-3) at 20K, the Hall mobilities varying between 8 and 3.5x10(^5) cm(^2)V(^-1)s(^-1) at 20K. Magnetically, the samples generally show a paramagnetic signal that is swamped by the diamagnetic background of the substrate and buffer layers. The paramagnetisrn can be well modelled using a Curie Weiss fit. A number of the samples show a saturation in the magnetisation, which, has been explained via the use of vacancy ordering within MnTe regions in the sample. The susceptibility of the samples has been investigated using a Faraday balance system, and this data has been fitted using; a cluster model for Mn ions within the sample. The photomagnetisation of Cd(_0.9)Mn(_0.1)Te:In has been investigated using a faraday balance system, and modelled using the work of Dietl and Sample, to calculate the number of polarons that had formed on donors in the sample, ΔN(_D)(^MAG) = 1.28x10(^15)cm(^-3). The number of donors in the sample has been measured by means of the Hall effect, ΔN(_D)(^ELEC) = 1.92x10(^15)cm(^-3), and this value compared to that obtained from the model. We have proposed a model to explain this discrepancy based on the concept of band tails in the impurity band.
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Lawless, Martin John. "Magneto-optical properties of strained layer and dilute magnetic semiconductor superlattices." Thesis, University of Oxford, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.334257.

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Norberg, Nicholas S. "Magnetic nanocrystals : synthesis and properties of diluted magnetic semiconductor quantum dots /." Thesis, Connect to this title online; UW restricted, 2006. http://hdl.handle.net/1773/8625.

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Owen, Man Hon Samuel. "Electrical gating effects on the magnetic properties of (Ga,Mn)As diluted magnetic semiconductors." Thesis, University of Cambridge, 2010. https://www.repository.cam.ac.uk/handle/1810/228705.

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The aim of the research project presented in this thesis is to investigate the effects of electrostatic gating on the magnetic properties of carrier-mediated ferromagnetic Ga1-xMnxAs diluted magnetic semiconductors. (Ga,Mn)As can be regarded as a prototype material because of its strong spin-orbit coupling and its crystalline properties which can be described within a simple band structure model. Compressively strained (Ga,Mn)As epilayer with more complex in-plane competing cubic and uniaxial magnetic anisotropies is of particular interest since a small variation of these competing anisotropy fields provide a means for the manipulation of its magnetization via external electric field. An all-semiconductor epitaxial p-n junction field-effect transistor (FET) based on low-doped Ga0.975Mn0.025As was fabricated. It has an in-built n-GaAs back-gate, which, in addition to being a normal gate, enhances the gating effects, especially in the depletion of the epilayer, by decreasing the effective channel thickness by means of a depletion region. A shift in the Curie temperature of ~2 K and enhanced anisotropic magnetoresistance (AMR) (which at saturation reaches ~30%) is achieved with a depletion of a few volts. Persistent magnetization switchings with short electric field pulses are also observed. The magnitude of the switching field is found to decrease with increasing depletion of the (Ga,Mn)As layer. By employing the k . p semiconductor theory approach (performed by our collaborators in Institute of Physics, ASCR, Prague), including strong spin-orbit coupling effects in the host semiconductor valence band, a change in sign of Kc at hole density of approximately 1.5x1020 cm-3 is observed. Below this density, the [110]/[1⁻10] magnetization directions are favoured, consistent with experimental data. A double-gated FET, with an ionic-gel top-gate coupled with a p-n junction back-gate based on the same material, was also employed in an attempt to achieve larger effects through gating. It reaffirms the results obtained and demonstrates enhanced gating effects on the magnetic properties of (Ga,Mn)As.
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De, Ranieri Elisa. "Strain-induced effects on the magnetotransport properties of GaMnAs diluted magnetic semiconductors." Thesis, University of Cambridge, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.608470.

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Railson, Stuart Vaughan. "Optical spectroscopy of Cd←1←←←xMn←xTe heterostructures." Thesis, University of East Anglia, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.318019.

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Books on the topic "Diluted magnetic semiconductors - Optical properties"

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International School of Materials Science and Technology (1990 Erice, Italy). Semimagnetic semiconductors and diluted magnetic semiconductors. New York: Plenum Press, 1991.

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Jacek, Kossut, and SpringerLink (Online service), eds. Introduction to the Physics of Diluted Magnetic Semiconductors. Berlin, Heidelberg: Springer-Verlag Berlin Heidelberg, 2010.

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C, McGill T. Device Physics of Superlattices and Small Structures. Ft. Belvoir: Defense Technical Information Center, 1987.

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Gaj, Jan A., and Jacek Kossut. Introduction to the Physics of Diluted Magnetic Semiconductors. Springer, 2013.

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Semimagnetic Semiconductors and Diluted Magnetic Semiconductors (Ettore Majorana International Science Series: Physical Sciences). Springer, 1991.

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(Editor), Markus Donath, and Wolfgang Nolting (Editor), eds. Local-Moment Ferromagnets: Unique Properties for Modern Applications (Lecture Notes in Physics). Springer, 2005.

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(Editor), John R. Reynolds, S. P. Ermer (Editor), J. W. Perry (Editor), Alex K.-Y. Jen (Editor), and Zhenan Bao (Editor), eds. Electrical, Optical, and Magnetic Properties of Organic Solid-State Materials IV: Symposium Held December 1-5, 1997, Boston, Massachusetts, U.S.A (Materials ... Society Symposia Proceedings, V.488.). Materials Research Society, 1998.

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Bi, J. F., and K. L. Teo. Nanoscale Ge1−xMnxTe ferromagnetic semiconductors. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533053.013.17.

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This article discusses the structure characterizations, magnetic and transport behaviors of the nanoscale ferromagnetic semiconductors Ge1-xMnxTe grown by molecular beam epitaxy with various manganese compositions x ranging from 0.14 to 0.98. After providing an overview of the growth procedure and characterization, the article analyzes the structures of the Ge1-xMnxTe system using X-ray diffraction and high-resolution transmission electron microscopy. It then considers the optical, magnetic and transport properties of the semiconductors and shows that the crystal quality is degraded and the proportion of amorphous phase increases with increasing Mn composition. Nanoclusters and nanoscale grains can be observed when x > 0.24, which greatly affect their magnetic and electronic properties. The magnetic anisotropy is weakened due to different orientations of the clusters embedded in the GeTe host. An anomalous Hall effect is also observed in the samples, which can be attributed to extrinsic skew scattering.
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Book chapters on the topic "Diluted magnetic semiconductors - Optical properties"

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Cibert, J., and D. Scalbert. "Diluted Magnetic Semiconductors: Basic Physics and Optical Properties." In Springer Series in Solid-State Sciences, 389–431. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-78820-1_13.

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Cibert, Joël, and Denis Scalbert. "Diluted Magnetic Semiconductors: Basic Physics and Optical Properties." In Springer Series in Solid-State Sciences, 477–524. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-65436-2_14.

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Kutrowski, M., T. Wojtowicz, S. Kret, G. Karczewski, J. Kossut, R. Fiederling, B. König, et al. "Magnetooptical Properties of Graded Quantum Well Structures Made of Diluted Magnetic Semiconductors." In Optical Properties of Semiconductor Nanostructures, 237–46. Dordrecht: Springer Netherlands, 2000. http://dx.doi.org/10.1007/978-94-011-4158-1_25.

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Kavokin, Kirill. "Coherent Spin Dynamics in Diluted-Magnetic Quantum Wells." In Optical Properties of Semiconductor Nanostructures, 255–68. Dordrecht: Springer Netherlands, 2000. http://dx.doi.org/10.1007/978-94-011-4158-1_27.

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Chang, L. L., D. D. Awschalom, M. R. Freeman, and L. Vina. "Optical and Magnetic Properties of Diluted Magnetic Semiconductor Heterostructures." In Condensed Systems of Low Dimensionality, 165–79. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4684-1348-9_13.

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Murayama, A., and Y. Oka. "Optical Properties and Spin Dynamics of Diluted Magnetic Semiconductor Nanostructures." In Optical Properties of Condensed Matter and Applications, 393–415. Chichester, UK: John Wiley & Sons, Ltd, 2006. http://dx.doi.org/10.1002/0470021942.ch16.

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Limmer, W., H. Leiderer, and W. Gebhardt. "Resonant Raman Scattering by Lo Phonons in II-VI Compounds and Diluted Magnetic Semiconductors." In Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors, 281–92. Boston, MA: Springer US, 1989. http://dx.doi.org/10.1007/978-1-4684-5661-5_28.

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Kossut, J., and W. Dobrowolski. "Properties of diluted magnetic semiconductors." In Narrow-gap II–VI Compounds for Optoelectronic and Electromagnetic Applications, 401–29. Boston, MA: Springer US, 1997. http://dx.doi.org/10.1007/978-1-4613-1109-6_13.

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Lascaray, J. P. "Magnetooptic Properties of Wide Gap II1-xMnxVI Semimagnetic Semiconductors." In Semimagnetic Semiconductors and Diluted Magnetic Semiconductors, 169–90. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3776-2_7.

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da Silva, E. C. F. "Diluted magnetic oxides: magnetic properties." In New Data and Updates for IV-IV, III-V, II-VI and I-VII Compounds, their Mixed Crystals and Diluted Magnetic Semiconductors, 544. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-14148-5_297.

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Conference papers on the topic "Diluted magnetic semiconductors - Optical properties"

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Oka, Yasuo, Kazumasa Takabayashi, Nobuhiro Takahashi, Eiji Shirado, Jinxi Shen, and Izuru Souma. "Magneto-optical properties of diluted magnetic semiconductor nanostructures." In 4th International Conference on Thin Film Physics and Applications, edited by Junhao Chu, Pulin Liu, and Yong Chang. SPIE, 2000. http://dx.doi.org/10.1117/12.408299.

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Savchuk, Andriy I., Alessio Perrone, Ihor D. Stolyarchuk, Oleksandr A. Savchuk, Vitaliy V. Makoviy, Mykhailo M. Smolinsky, and Oleksandra A. Shporta. "Zinc oxide based diluted magnetic semiconductor nanoparticles: Synthesis by laser ablation in liquids, microstructural and optical properties." In THE PHYSICS OF SEMICONDUCTORS: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012. AIP, 2013. http://dx.doi.org/10.1063/1.4848474.

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Ganesan, K., and H. L. Bhat. "Magneto-transport and optical properties of diluted magnetic semiconductor Ga1−xMnxSb." In 2007 International Workshop on Physics of Semiconductor Devices. IEEE, 2007. http://dx.doi.org/10.1109/iwpsd.2007.4472683.

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Sugakov, V. I., and G. V. Vertsimakha. "Effect of fluctuations on optical properties of diluted magnetic semiconductors with quantum wells in exciton region of spectra." In XV International School on Spectroscopy of Molecules and Crystals, edited by Galina A. Puchkovska and Sergey A. Kostyukevych. SPIE, 2002. http://dx.doi.org/10.1117/12.486681.

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Takahashi, Masao. "Transport properties of diluted magnetic semiconductors." In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994129.

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Krasinski, J., P. Papanestor, D. F. Heller, and J. K. Furdyna. "Nonreciprocal optical devices based on diluted (semi) magnetic semiconductors." In Conference on Lasers and Electro-Optics. Washington, D.C.: OSA, 1986. http://dx.doi.org/10.1364/cleo.1986.fq6.

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Nakamura, A., Y. Takeda, N. Imaoka, R. Akimoto, Marília Caldas, and Nelson Studart. "Magnetotransport Properties in Diluted Magnetic Semiconductor p-Be[sub 1−x]Mn[sub x]Te." In PHYSICS OF SEMICONDUCTORS: 29th International Conference on the Physics of Semiconductors. AIP, 2010. http://dx.doi.org/10.1063/1.3295470.

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Chen, P. P., H. Makino, Wei Lu, and Takafumi Yao. "MBE growth and properties of InN and InN-based diluted magnetic semiconductors." In SPIE Proceedings, edited by Junhao Chu, Zongsheng Lai, Lianwei Wang, and Shaohui Xu. SPIE, 2004. http://dx.doi.org/10.1117/12.607268.

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Gan'shina, E., G. Zykov, L. Golik, Z. Kun'kova, A. Rukovishnikov, M. Temiryazeva, Y. Markin, and V. Lesnikov. "Spectroscopic and microscopic investigations of InFeSb diluted magnetic semiconductors prepared by laser ablation." In 2017 IEEE 7th International Conference "Nanomaterials: Application & Properties" (NAP). IEEE, 2017. http://dx.doi.org/10.1109/nap.2017.8190382.

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Kayanuma, K. "Optical Study of Spin Injection Dynamics in Double Quantum Wells of II-VI Diluted Magnetic Semiconductors." In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994631.

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