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1
Radovanovic, Pavle V. "Synthesis, spectroscopy, and magnetism of diluted magnetic semiconductor nanocrystals /." Thesis, Connect to this title online; UW restricted, 2004. http://hdl.handle.net/1773/8494.
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Peleckis, Germanas. "Studies on diluted oxide magnetic semiconductors for spin electronic applications." Access electronically, 2006. http://www.library.uow.edu.au/adt-NWU/public/adt-NWU20070821.145447/index.html.
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Wang, Weigang. "Spin-dependent transport in magnetic tunnel junctions and diluted magnetic semiconductors." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 184 p, 2009. http://proquest.umi.com/pqdweb?did=1654494821&sid=3&Fmt=2&clientId=8331&RQT=309&VName=PQD.
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Tran, Lien. "InSb semiconductors and (In,Mn)Sb diluted magnetic semiconductors." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2011. http://dx.doi.org/10.18452/16334.
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Im Rahmen dieser Arbeit wurden InSb- und verdünnt-magnetische In_{1-x}Mn_xSb Filme mittels Gasquellen-Molekularstrahlepitaxie hergestellt und deren strukturelle und elektronische Eigenschaften untersucht. Die 2 μm InSb-Dünnschichten wurden sowohl auf GaAs(001)-Substrat als auch um 4° in Richtung [110] fehlgeschnittenem Si(001)-Substrat hergestellt. Optimierte InSb-Schichten direkt auf GaAs zeigen eine hohe kristalline Qualität, niedriges Rauschen und eine Elektronenbeweglichkeit von 41100 cm^2/Vs bei 300 K. Die Ladungsträgerkonzentration beträgt etwa 2,9e16 cm^{-3}. Um InSb-Dünnschichten guter Qualität auf Si-Substrat zu realisieren, wurden fehlgeschnittene Substrate benutzt. Zur Reduzierung der Gitterfehlanpassung wurden Pufferschichten gewachsen. Eine Elektronenmobilität von 24000 cm^2/Vs und Ladungsträgerkonzentration von 2,6e16 cm^{-3} wurden bei 300 K nachgewiesen. Diese Probe enthält ein 0,06 μm GaAs/AlSb-Supergitter als Pufferschicht (Wachstumstemperatur war 340°C). Diese Probe zeigt der höheren Dichte der Microtwins und Stapelfehler als auch den Threading-Versetzungen in der schnittstellennahen Region geschuldet. Die Deep-Level Rauschspektren zeigen die Existenz von Deep-Levels sowohl in GaAs- als auch in Si-basierten Proben. Die InSb-Filme auf Si-Substrat zeigen einen kleineren Hooge-Faktor im Vergleich zu Schichten auf GaAs (300 K). Unter Anwendung der optimierten Wachstumsbedingungen für InSb/GaAs wurden verdünnt-magnetische In_{1-x}Mn_xSb-Schichten (bis zum 1% Mangan) auf GaAs (001)-realisiert. Mn verringert die Gitterkonstante und damit den Grad der Relaxation von (In,Mn)Sb-Filmen. In den Proben befindet sich Mn in zwei magnetischen Formen, sowohl als verdünnt-magnetischer Halbleiter (In,Mn)Sb, als auch als MnSb-Cluster. Die Cluster dominieren auf der Oberfläche. Die Curie-Temperatur, Tc, unterscheidet sich für die beiden Formen. Für (In,Mn)Sb ist Tc kleiner als 50 K. Die MnSb-Cluster zeigen dagegen ein Tc über 300 K.<br>This dissertation describes the growth by molecular beam epitaxy and the characterization of the semiconductor InSb and the diluted magnetic semiconductor (DMS) In_{1-x}Mn_xSb. The 2 µm-thick InSb films were grown on GaAs (001) substrate and Si (001) offcut by 4° toward (110) substrate. After optimizing the growth conditions, the best InSb films grown directly on GaAs results in a high crystal quality, low noise, and an electron mobility of 41100 cm^2/V s Vs with associated electron concentration of 2.9e16 cm^{-3} at 300 K. In order to successfully grow InSb on Si, tilted substrates and the insertion of buffer layers were used. An electron mobility of 24000 cm^2/V s measured at 300 K, with an associated carrier concentration of 2.6e16 cm^{-3} is found for the best sample that was grown at 340°C with a 0.06 μm-thick GaSb/AlSb superlattice buffer layer. The sample reveals a density of microtwins and stacking faults as well as threading dislocations in the near-interface. Deep level noise spectra indicate the existence of deep levels in both GaAs and Si-based samples. The Si-based samples exhibit the lowest Hooge factor at 300 K, lower than the GaAs-based samples. Taking the optimized growth conditions of InSb/GaAs, the DMS In_{1-x}Mn_xSb/GaAs is prepared by adding Mn (x < 1%) into the InSb during growth. Mn decreases the lattice constant as well as the degree of relaxation of (In,Mn)Sb films. Mn also distributes itself to result in two different and distinct magnetic materials: the DMS (In,Mn)Sb and clusters MnSb. The MnSb clusters dominate only on the surface. For the DMS alloy (In,Mn)Sb, the measured values of Curie temperature Tc appears to be smaller than 50 K, whereas it is greater than 300 K for the MnSb clusters.
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Mishra, Subodha. "Theory of photo-induced ferro-magnetism in dilute magnetic semiconductors." Diss., Columbia, Mo. : University of Missouri-Columbia, 2006. http://hdl.handle.net/10355/4413.
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Thesis (Ph. D.) University of Missouri-Columbia, 2006.<br>The entire dissertation/thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file (which also appears in the research.pdf); a non-technical general description, or public abstract, appears in the public.pdf file. Title from title screen of research.pdf file (viewed on August 6, 2007) Includes bibliographical references.
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Horsfall, Alton Barrett. "Electrical and magnetic properties of II-VI diluted magnetic semiconductors." Thesis, Durham University, 1997. http://etheses.dur.ac.uk/4984/.
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The electrical and magnetic properties of MOVPE grown epitaxial layers of Hg(_1-x)Mn(_x)Te layers has been investigated using a number of techniques. The samples have been grown by the Inter Diffused Multilayer Process, (IMP) on (100) semi insulating GaAs substrates with ZnTe and CdTe buffer layers. The samples have been shown to show a number of phenomena nopt observed in the bulk material, such as an anomaly in the resistivity, rnagnetoresistance related to the intrinsic magnetism of the material, and saturation of the room temperature magnetisation. In general the samples are of a highly compensated nature with the value of |R(_H)e|(^-1) varying between l0(^14) and 5xI0(^17) cm(^-3) at 20K, the Hall mobilities varying between 8 and 3.5x10(^5) cm(^2)V(^-1)s(^-1) at 20K. Magnetically, the samples generally show a paramagnetic signal that is swamped by the diamagnetic background of the substrate and buffer layers. The paramagnetisrn can be well modelled using a Curie Weiss fit. A number of the samples show a saturation in the magnetisation, which, has been explained via the use of vacancy ordering within MnTe regions in the sample. The susceptibility of the samples has been investigated using a Faraday balance system, and this data has been fitted using; a cluster model for Mn ions within the sample. The photomagnetisation of Cd(_0.9)Mn(_0.1)Te:In has been investigated using a faraday balance system, and modelled using the work of Dietl and Sample, to calculate the number of polarons that had formed on donors in the sample, ΔN(_D)(^MAG) = 1.28x10(^15)cm(^-3). The number of donors in the sample has been measured by means of the Hall effect, ΔN(_D)(^ELEC) = 1.92x10(^15)cm(^-3), and this value compared to that obtained from the model. We have proposed a model to explain this discrepancy based on the concept of band tails in the impurity band.
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Huang, Lunmei. "Computational Material Design : Diluted Magnetic Semiconductors for Spintronics." Doctoral thesis, Uppsala : Acta Universitatis Upsaliensis, 2007. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-7800.
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Norberg, Nicholas S. "Magnetic nanocrystals : synthesis and properties of diluted magnetic semiconductor quantum dots /." Thesis, Connect to this title online; UW restricted, 2006. http://hdl.handle.net/1773/8625.
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Gatuna, Ngigi wa. "Intrinsic vacancy chalcogenides as dilute magnetic semiconductors : theoretical investigation of transition-metal doped gallium selenide /." Thesis, Connect to this title online; UW restricted, 2007. http://hdl.handle.net/1773/10595.
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Miao, Jingqi. "The theory of magnetic polarons and magnetic field effect in diluted magnetic semiconductors." Thesis, University of Hull, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.264955.
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Brieler, Felix [Verfasser]. "Nanostructured diluted magnetic semiconductors within mesoporous silica / Felix Brieler." Gießen : Universitätsbibliothek, 2012. http://d-nb.info/1063954878/34.
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Liu, Mingde. "Magnetization-steps spectroscopy in dilute magnetic semiconductors and in molecular magnetism /." Thesis, Connect to Dissertations & Theses @ Tufts University, 1998.
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Thesis (Ph.D.)--Tufts University, 1998 .<br>Adviser: Yaacov Shapira. Submitted to the Dept. of Physics. Includes bibliographical references. Access restricted to members of the Tufts University community. Also available via the World Wide Web;
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Owen, Man Hon Samuel. "Electrical gating effects on the magnetic properties of (Ga,Mn)As diluted magnetic semiconductors." Thesis, University of Cambridge, 2010. https://www.repository.cam.ac.uk/handle/1810/228705.
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The aim of the research project presented in this thesis is to investigate the effects of electrostatic gating on the magnetic properties of carrier-mediated ferromagnetic Ga1-xMnxAs diluted magnetic semiconductors. (Ga,Mn)As can be regarded as a prototype material because of its strong spin-orbit coupling and its crystalline properties which can be described within a simple band structure model. Compressively strained (Ga,Mn)As epilayer with more complex in-plane competing cubic and uniaxial magnetic anisotropies is of particular interest since a small variation of these competing anisotropy fields provide a means for the manipulation of its magnetization via external electric field. An all-semiconductor epitaxial p-n junction field-effect transistor (FET) based on low-doped Ga0.975Mn0.025As was fabricated. It has an in-built n-GaAs back-gate, which, in addition to being a normal gate, enhances the gating effects, especially in the depletion of the epilayer, by decreasing the effective channel thickness by means of a depletion region. A shift in the Curie temperature of ~2 K and enhanced anisotropic magnetoresistance (AMR) (which at saturation reaches ~30%) is achieved with a depletion of a few volts. Persistent magnetization switchings with short electric field pulses are also observed. The magnitude of the switching field is found to decrease with increasing depletion of the (Ga,Mn)As layer. By employing the k . p semiconductor theory approach (performed by our collaborators in Institute of Physics, ASCR, Prague), including strong spin-orbit coupling effects in the host semiconductor valence band, a change in sign of Kc at hole density of approximately 1.5x1020 cm-3 is observed. Below this density, the [110]/[1⁻10] magnetization directions are favoured, consistent with experimental data. A double-gated FET, with an ionic-gel top-gate coupled with a p-n junction back-gate based on the same material, was also employed in an attempt to achieve larger effects through gating. It reaffirms the results obtained and demonstrates enhanced gating effects on the magnetic properties of (Ga,Mn)As.
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Ali, Bakhtyar. "Study of titanium dioxide based dilute magnetic semiconductors the role of defects and dopants /." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 85 p, 2008. http://proquest.umi.com/pqdweb?did=1597633311&sid=20&Fmt=2&clientId=8331&RQT=309&VName=PQD.
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Railson, Stuart Vaughan. "Optical spectroscopy of Cdâ†1â†â†â†xMnâ†xTe heterostructures." Thesis, University of East Anglia, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.318019.
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De, Ranieri Elisa. "Strain-induced effects on the magnetotransport properties of GaMnAs diluted magnetic semiconductors." Thesis, University of Cambridge, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.608470.
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Liu, William K. "Electron spin dynamics in quantum dots, and the roles of charge transfer excited states in diluted magnetic semiconductors /." Thesis, Connect to this title online; UW restricted, 2007. http://hdl.handle.net/1773/8588.
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Kaspar, Tiffany C. "Materials and magnetic studies of cobalt-doped anatase titanium dioxide and perovskite strontium titanate as potential dilute magnetic semiconductors /." Thesis, Connect to this title online; UW restricted, 2004. http://hdl.handle.net/1773/9902.
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Zhou, Shengqiang. "Transition metal implanted ZnO: a correlation between structure and magnetism." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2008. http://nbn-resolving.de/urn:nbn:de:bsz:14-ds-1209998012687-36583.
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Nowadays ferromagnetism is often found in potential diluted magnetic semiconductor systems. However, many authors question the origin of this ferromagnetism, i.e. if the observed ferromagnetism stems from ferromagnetic precipitates rather than from carriermediated magnetic coupling of ionic impurities, as required for a diluted magnetic semiconductor. In this thesis, this question will be answered for transition-metal implanted ZnO single crystals. Magnetic secondary phases, namely metallic Fe, Co and Ni nanocrystals, are formed inside ZnO. They are - although difficult to detect by common approaches of structural analysis - responsible for the observed ferromagnetism. Particularly Co and Ni nanocrystals are crystallographically oriented with respect to the ZnO matrix. Their structure phase transformation and corresponding evolution of magnetic properties upon annealing have been established. Finally, an approach, pre-annealing ZnO crystals at high temperature before implantation, has been demonstrated to sufficiently suppress the formation of metallic secondary phases.
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Stanciu, Victor. "Magnetism of Semiconductors and Metallic Multilayers." Doctoral thesis, Uppsala : Acta Universitatis Upsaliensis : Univ.-bibl. [distributör], 2005. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-5844.
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Bergqvist, Lars. "Electronic Structure and Statistical Methods Applied to Nanomagnetism, Diluted Magnetic Semiconductors and Spintronics." Doctoral thesis, Uppsala University, Department of Physics, 2005. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-5732.
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<p>This thesis is divided in three parts. In the first part, a study of materials aimed for spintronics applications is presented. More specifically, calculations of the critical temperature in diluted magnetic semiconductors (DMS) and half-metallic ferromagnets are presented using a combination of electronic structure and statistical methods. It is shown that disorder and randomness of the magnetic atoms in DMS materials play a very important role in the determination of the critical temperature.</p><p>The second part treats materials in reduced dimensions. Studies of multilayer and trilayer systems are presented. A theoretical model that incorporates interdiffusion in a multilayer is developed that gives better agreement with experimental observations. Using Monte Carlo simulations, the observed magnetic properties in the trilayer system Ni/Cu/Co at finite temperatures are qualitatively reproduced.</p><p>In the third part, electronic structure calculations of complex Mn-based compounds displaying noncollinear magnetism are presented. The calculations reproduce with high accuracy the observed magnetic properties in these compounds. Furthermore, a model based on the electronic structure of the necessary conditions for noncollinear magnetism is presented.</p>
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Mak, Chee-Leung. "Light scattering study of the diluted magnetic semiconductors Zn1-xCoxSe and Zn1-xFexSe /." The Ohio State University, 1993. http://rave.ohiolink.edu/etdc/view?acc_num=osu1487843688959851.
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Titov, Andrey. "Electronic properties of the diluted magnetic semiconductors : Ga1-xMnxN, Ga1-xMnxAs, Ge1-xMnx." Université Joseph Fourier (Grenoble), 2006. http://www.theses.fr/2006GRE10285.
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Les propriétés électroniques de (Ga,Mn)N ont été étudiées par spectroscopie d'absorption des rayons X au seuil K du Mn. Des calculs ab-initio ont été utilisés pour interpréter les spectres d'absorption de (Ga,Mn)N. Deux pré-pics sont présents dans le seuil du Mn: le premier pré-pic est attribué aux transitions électronique vers les états 3d du Mn de spin up, tandis que le second pré-pic correspond aux transitions vers les états 3d du Mn de spin down. Cette interprétation nous permet de déterminer que l'état électronique du Mn dans (Ga,Mn)N est Mn3+: deux pré-pics sont présents dans les spectres d'absorption du Mn3+ et un seul pré-pic reste dans les spectres du Mn2+. Ce changement des spectres a été vérifié expérimentalement sur des échantillons de (Zn,Mn2+)Te et (Ga,Mn2+)As. De plus, cette interprétation permet d'étudier la distribution du Mn dans (Ga,Mn)N: la forme des spectres d'absorption suggère que la distribution du Mn est homogène dans nos échantillons de (Ga,Mn)N<br>Electronic properties of the diluted magnetic semiconductor (Ga,Mn)N were studied by x-ray absorption spectroscopy at the K-edge of Mn. The measured x-ray absorption spectra were further interpreted using the ab-initio calculations. Two pre-edge absorption lines are observed in the x-ray absorption spectra: the first line was attributed to electronic transitions into 3d states of Mn of spin up, while the second line corresponds to transitions into 3d states of Mn of spin down. This interpretation allows us to determine the valence state of Mn: two absorption lines are present in the pre-edge structure of Mn3+ and only one line remains in case of Mn2+. Such a change of the pre-edge structure was checked experimentally on (Zn,Mn2+)Te and on (Ga,Mn2+)As. In addition, the distribution of Mn in (Ga,Mn)N can be studied using the interpretation: the shape of the spectra points to a homogeneous distribution of Mn in our (Ga,Mn)N samples
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Gupta, Shalini. "Growth of novel wide bandgap room temperature ferromagnetic semiconductor for spintronic applications." Diss., Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/33809.
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This work presents the development of a GaN-based dilute magnetic semiconductor (DMS) by metal organic chemical vapor deposition (MOCVD) that is ferromagnetic at room temperature (RT), electrically conductive, and possesses magnetic properties that can be tuned by n- and p-doping. The transition metal series (TM: Cr, Mn, and Fe) along with the rare earth (RE) element, Gd, was investigated in this work as the magnetic ion source for the DMS. Single- phase and strain-free GaTMN films were obtained. Optical measurements revealed that Mn is a deep acceptor in GaN, while Hall measurements showed that these GaTMN films were semi-insulating, making carrier mediated exchange unlikely. Hysteresis curves were obtained for all the GaTMN films, and by analyzing the effect of n- and p-dopants on the magnetic properties of these films it was determined that the magnetization is due to magnetic clusters. These findings are supported by the investigation of the effect of TM dopants in GaN nanostructures which reveal that TMs enhance nucleation resulting in superparamagnetic nanostructures. Additionally, this work presents the first report on the development of GaGdN by MOCVD providing an alternate route to developing a RT DMS. Room temperature magnetization results revealed that the magnetization strength increases with Gd concentration and can be enhanced by n- and p-doping, with holes being more efficient at stabilizing the ferromagnetic signal. The GaGdN films obtained in this work are single-phase, unstrained, and conductive making them suitable for the development of multifunctional devices that integrate electrical, optical, and magnetic properties.
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Wang, Jie. "Carrier concentration determination in GaMnAs by optical techniques /." View abstract or full-text, 2006. http://library.ust.hk/cgi/db/thesis.pl?PHYS%202006%20WANGJ.
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Guo, Bicheng. "Chemical synthesis and characterization of CdMnS and CdMnSe quantum dots /." View abstract or full-text, 2004. http://library.ust.hk/cgi/db/thesis.pl?PHYS%202004%20GUO.
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Thesis (M. Phil.)--Hong Kong University of Science and Technology, 2004.<br>Includes bibliographical references (leaves 63-66). Also available in electronic version. Access restricted to campus users.
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Sun, Yongke. "Theoretical studies of the electronic, magneto-optical, and transport properties of diluted magnetic semiconductors." [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0011604.
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Fan, Junpeng. "Synthesis and advanced structural and magnetic characterization of mesoporous transition metal–doped sno2 powders and films." Doctoral thesis, Universitat Autònoma de Barcelona, 2017. http://hdl.handle.net/10803/457982.
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Aquesta Tesi doctoral comprèn la síntesi mitjançant nanoemmotllament (de l’anglès, nanocasting) i autoassemblatge per evaporació induïda (de l’anglès, evaporation–induced self–assembly) i la caracterització exhaustiva de pols i capes de SnO2 mesoporós dopat amb Ni i Cu. L’origen de les propietats magnètiques d’aquests materials es discuteix en detall.
En primer lloc, es van sintetitzar per nanoemmotllament a partir de motlles de sílice KIT–6, pols mesoporosa ordenada de SnO2 dopada amb diferents quantitats de Ni. Es va verificar la replicació correcta del motlle de sílice mitjançant microscòpia electrònica de rastreig. No es van detectar fases extres atribuïbles a Ni o NiO en els corresponents difractogrames excepte per a la mostra amb el dopatge més alt (9 at.% Ni), per a la qual es va observar la presència de NiO com a fase secundària. Es va estudiar l’estat d’oxidació i la distribució espaial de Ni en la pols mitjançant espectroscòpia fotoelectrònica de raigs X i espectroscòpia de pèrdua d’energia d’electrons, respectivament. Les mostres dopades amb Ni presenten resposta ferromagnètica tant a temperatura ambient com a baixa temperatura, com a conseqüència de la presència d’espins no compensats a la superfície de nanopartícules de NiO i vacants d’oxigen.
En segon lloc, es van sintetitzar capes primes continues i mesoporoses de SnO2 dopades amb Ni a partir de diferents relacions molars [Ni(II)]/[Sn(IV)] mitjançant un procés d’autoassemblatge sol–gel, utilitzant el copolímer tribloc P–123 com a agent director d’estructura. Una caracterització estructural profunda va evidenciar l’obtenció d’una estructura nanoporosa 3–D, de gruix comprès entre els 100 i 150 nm, i mida de porus de 10 nm. Els experiments de difracció de raigs X d’incidència rasant van posar de manifest que el Ni ocupava posicions substitucionals en la xarxa tipus rutil del SnO2, tot i que les anàlisis per dispersió d’energies de raigs X també van revelar la presència de petits clústers de NiO en les capes produïdes a partir de les relacions molars [Ni(II)]/[Sn(IV)] més elevades. Convé remarcar que les propietats magnètiques de les capes mesoporoses varien significativament en funció del percentatge de dopant. Les capes de SnO2 no dopades presenten un comportament diamagnètic, mentre que les dopades amb Ni mostren un clar senyal paramagnètic amb una petita contribució ferromagnètica.
En tercer lloc, també es van estudiar les propietats magnètiques de pols mesoporosa ordenada de SnO2 dopada amb Cu, obtinguda mitjançant nanoemmotllament a partir de sílice KIT–6. Per bé que una eventual contaminació amb impureses de Fe or la presència de vacants d’oxigen podrien explicar el comportament ferromagnètic observat a temperatura ambient, el ferromagnetisme a baixa temperatura es va atribuir únicament a la naturalesa nanoestructurada de les nanopartícules antiferromagnètiques de CuO formades (espins no compensats i shape–mediated spin canting). La menor temperatura de bloqueig, situada entre 30 i 50 K, i l’existència de petits desplaçaments verticals en els cicles d’histèresi van confirmar efectes de mida en les nanopartícules de CuO<br>This Thesis dissertation covers the synthesis by means of nanocasting and evaporation–induced self–assembly (EISA) methods as well as the advanced characterization of Ni, Cu–doped mesoporous SnO2 powders and films. The origin of the magnetic properties in these materials is also discussed in detail.
Firstly, ordered mesoporous SnO2 powders doped with different Ni amounts were synthesized by nanocasting from mesoporous KIT–6 silica. Successful replication of the silica template was verified by scanning electron microscopy. No extra phases attributed to Ni or NiO were detected in the corresponding X–ray diffractograms except for the sample with the highest doping amount (e.g., 9 at.% Ni), for which NiO as secondary phase was observed. The oxidation state and spatial distribution of Ni in the powders was investigated by X–ray photoelectron spectroscopy and electron energy loss spectroscopy, respectively. Ni–containing powders exhibit ferromagnetic response at low and room temperatures, due to uncompensated spins at the surface of NiO nanoparticles and the occurrence of oxygen vacancies.
Secondly, continuous mesoporous Ni–doped SnO2 thin films were synthesized from variable [Ni(II)]/[Sn(IV)] molar ratios through a sol–gel based self–assembly process, using P–123 triblock copolymer as a structure directing agent. A deep structural characterization revealed a truly 3–D nanoporous structure with thickness in the range of 100–150 nm, and average pore size about 10 nm. Grazing incidence X–ray diffraction experiments indicated that Ni had successfully substituted Sn in the rutile–type lattice, although energy–dispersive X–ray analyses also revealed the occurrence of small NiO clusters in the films produced from high [Ni(II)]/[Sn(IV)] molar ratios. Interestingly, the magnetic properties of these mesoporous films significantly vary as a function of the doping percentage. The undoped SnO2 films exhibit a diamagnetic behaviour, whereas a clear paramagnetic signal with small ferromagnetic contribution dominates the magnetic response of the Ni–doped mesoporous films.
Thirdly, the magnetic properties of ordered mesoporous Cu–doped SnO2 powders, prepared by hard–templating from KIT–6 silica, were also studied. While Fe contamination or the presence of oxygen vacancies might be a plausible explanation of the room temperature ferromagnetism, the low–temperature ferromagnetism was mainly and uniquely assigned to the nanoscale nature of the formed antiferromagnetic CuO nanoparticles (uncompensated spins and shape–mediated spin canting). The reduced blocking temperature, which resided between 30 and 5 K, and small vertical shifts in the hysteresis loops confirmed size effects in the CuO nanoparticles.
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Zhou, Shengqiang. "Transition metal implanted ZnO: a correlation between structure and magnetism." Doctoral thesis, Technische Universität Dresden, 2007. https://tud.qucosa.de/id/qucosa%3A23718.
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Nowadays ferromagnetism is often found in potential diluted magnetic semiconductor systems. However, many authors question the origin of this ferromagnetism, i.e. if the observed ferromagnetism stems from ferromagnetic precipitates rather than from carriermediated magnetic coupling of ionic impurities, as required for a diluted magnetic semiconductor. In this thesis, this question will be answered for transition-metal implanted ZnO single crystals. Magnetic secondary phases, namely metallic Fe, Co and Ni nanocrystals, are formed inside ZnO. They are - although difficult to detect by common approaches of structural analysis - responsible for the observed ferromagnetism. Particularly Co and Ni nanocrystals are crystallographically oriented with respect to the ZnO matrix. Their structure phase transformation and corresponding evolution of magnetic properties upon annealing have been established. Finally, an approach, pre-annealing ZnO crystals at high temperature before implantation, has been demonstrated to sufficiently suppress the formation of metallic secondary phases.
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Tran, Lien [Verfasser], T. [Akademischer Betreuer] Masselink, H. [Akademischer Betreuer] Riechert, and G. [Akademischer Betreuer] Salamo. "InSb semiconductors and (In,Mn)Sb diluted magnetic semiconductors : growth and properties / Lien Tran. Gutachter: T. Masselink ; H. Riechert ; G. Salamo." Berlin : Humboldt Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2011. http://d-nb.info/1015081541/34.
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Bombeck, Michael [Verfasser], Manfred [Akademischer Betreuer] Bayer, and Metin [Gutachter] Tolan. "High frequency magneto-acoustics in diluted magnetic semiconductors / Michael Bombeck. Betreuer: Manfred Bayer. Gutachter: Metin Tolan." Dortmund : Universitätsbibliothek Dortmund, 2014. http://d-nb.info/1101476400/34.
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Bombeck, Michael [Verfasser], Manfred Akademischer Betreuer] Bayer, and Metin [Gutachter] [Tolan. "High frequency magneto-acoustics in diluted magnetic semiconductors / Michael Bombeck. Betreuer: Manfred Bayer. Gutachter: Metin Tolan." Dortmund : Universitätsbibliothek Dortmund, 2014. http://nbn-resolving.de/urn:nbn:de:101:1-201605242288.
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Cygorek, Moritz [Verfasser], and Vollrath Martin [Akademischer Betreuer] Axt. "Quantum kinetic description of the spin dynamics in diluted magnetic semiconductors / Moritz Cygorek ; Betreuer: Vollrath Martin Axt." Bayreuth : Universität Bayreuth, 2017. http://d-nb.info/1127127349/34.
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Linneweber, Thorben [Verfasser], Ute [Akademischer Betreuer] Löw, and Florian [Gutachter] Gebhard. "Ab-initio Gutzwiller-DFT studies of diluted magnetic semiconductors / Thorben Linneweber ; Gutachter: Florian Gebhard ; Betreuer: Ute Löw." Dortmund : Universitätsbibliothek Dortmund, 2016. http://d-nb.info/1128401169/34.
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Linneweber, Thorben [Verfasser], Ute Akademischer Betreuer] Löw, and Florian [Gutachter] [Gebhard. "Ab-initio Gutzwiller-DFT studies of diluted magnetic semiconductors / Thorben Linneweber ; Gutachter: Florian Gebhard ; Betreuer: Ute Löw." Dortmund : Universitätsbibliothek Dortmund, 2016. http://nbn-resolving.de/urn:nbn:de:101:1-20170324909.
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Laura, M. Robinson. "USING TIME-RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY TO EXAMINE EXCITON DYNAMICS IN II-VI SEMICONDUCTOR NANOSTRUCTURES." University of Cincinnati / OhioLINK, 2001. http://rave.ohiolink.edu/etdc/view?acc_num=ucin980259259.
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Marin, Ivan Silvestre Paganini. "Propriedades eletrônicas de heteroestruturas semicondutoras magnéticas diluídas." Universidade de São Paulo, 2007. http://www.teses.usp.br/teses/disponiveis/76/76132/tde-21082008-111614/.
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Neste trabalho e apresentado um estudo, via teoria de massa efetiva multibanda autoconsistente de heteroestruturas de semicondutores magnéticos diluídos, generalizada para incluir parâmetros de diferentes materiais. A interacao magnética e descrita por um modelo de campo médio baseado no mecanismo de troca indireta, com a possibilidade de inclusão de diferentes íons magnéticos. As equacoes de massa efetiva são resolvidas de forma autoconsistente com o auxílio da equacao de Poisson. As interacoes de spin-órbita e de troca-correlacao, na aproximacao de densidade local, são incluídas no cálculo. O método e aplicado para o estudo das estruturas de bandas e densidades de carga com separacao por spin do portador de heteroestruturas com dopagem tipo-n e tipo-p, variando a geometria dos pocos magnéticos e também o período da super-rede, as densidades de portadores e as concentracoes de íons magnéticos. Solucoes autoconsistentes da equacao de massa efetiva são encontradas para o oxido semicondutor (Zn,Co)O. Será mostrada a separacao de portadores por spin em funcao dos parâmetros variados, simulando diversas concentracoes possíveis, utilizadas em sistemas descritos na literatura, e será analisado o comportamento dos perfis de potencial. Usando os dados obtidos, um diagrama de fases será traçado com base na polarizacao total ou parcial dos portadores, e o seu comportamento será discutido. Também serão mostradas as estruturas de bandas, os perfis de potencial e as distribuicoes de carga do semicondutor (GaMn)As, variando as densidades de portadores e a direcao do campo magnético intrínseco, gerado pela dopagem com íons magnéticos. Os resultados obtidos neste trabalho podem servir de guia para futuras experiências e para o desenvolvimento de dispositivos com semicondutores magnéticos diluídos baseados em (Zn,Co)O e (Ga,Mn)As. Os métodos aqui descritos são gerais e podem ser utilizados para outros materiais.<br>This work presents a self-consistent multiband effective mass theory applied to diluted magnetic semiconductor heterostructures, generalized to include parameters of different ma- terials. The magnetic interaction is described by a mean-field approximation based on indirect- exchange mecanism, with the possibility of inclusion of different magnetic ions. The effective mass equations are solved self-consistently with the help of the Poisson equation. Spin-orbit and exchange-correlation interactions are included in the simulation in the local density appro- ximation. The method is used to study band structures and charge densities separated by spin in n- and p-type heterostructures. The magnetic well\'s geometry, the superlattice period, the carrier density and the magnetic ion concentration are changed. Self-consistent solutions of the effective mass equation are found for the semiconductor oxide (Zn,Co)O. Charge separation by spin will be show in function of the variation of the simulation parameters, simulating several ion concentrations and charge densities used in systems described in literature, and the potenti- als profiles will be analised. Using the data obtained a phase diagram will be plotted, based on the carrier total or partial carrier polarization, and a model for the behavior of the phase diagram will be discussed. It will also be shown band structures, potential profiles and charge densities of the (Ga,Mn)As semiconductor, varying it carrier density and the direction of the intrinsic magnetic field, generated by the magnetic ions that doped the heterostructure. The results ob- tained in this work can be used as a guide in future experiences and development of devices with diluted magnetic semiconductors based on (Zn,Co)O and (Ga,Mn)As. The methods here described are general and can be used for other materials.
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Fang, Mei. "Properties of Multifunctional Oxide Thin Films Despostied by Ink-jet Printing." Doctoral thesis, KTH, Teknisk materialfysik, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-102021.
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Ink-jet printing offers an ideal answer to the emerging trends and demands of depositing at ambient temperatures picoliter droplets of oxide solutions into functional thin films and device components with a high degree of pixel precision. It is a direct single-step mask-free patterning technique that enables multi-layer and 3D patterning. This method is fast, simple, easily scalable, precise, inexpensive and cost effective compared to any of other methods available for the realization of the promise of flexible, and/or stretchable electronics of the future on virtually any type of substrate. Because low temperatures are used and no aggressive chemicals are required for ink preparation, ink-jet technique is compatible with a very broad range of functional materials like polymers, proteins and even live cells, which can be used to fabricate inorganic/organic/bio hybrids, bio-sensors and lab-on-chip architectures. After a discussion of the essentials of ink-jet technology, this thesis focuses particularly on the art of designing long term stable inks for fabricating thin films and devices especially oxide functional components for electronics, solar energy conversion, opto-electronics and spintronics. We have investigated three classes of inks: nanoparticle suspension based, surface modified nanoparticles based, and direct precursor solution based. Examples of the films produced using these inks and their functional properties are: 1) In order to obtain magnetite nanoparticles with high magnetic moment and narrow size distribution in suspensions for medical diagnostics, we have developed a rapid mixing technique and produced nanoparticles with moments close to theoretical values (APL 2011 and Nanotechnology 2012). The suspensions produced have been tailored to be stable over a long period of time. 2)In order to design photonic band gaps, suspensions of spherical SiO2 particles were produced by chemical hydrolysis (JAP 2010 and JNP 2011 - not discussed in the thesis). 3) Using suspension inks, (ZnO)1-x(TiO2)x composite films have been printed and used to fabricate dye sensitized solar cells (JMR 2012). The thickness and the composition of the films can be easily tailored in the inkjet printing process. Consequently, the solar cell performance is optimized. We find that adding Ag nanoparticles improves the ‘metal-bridge’ between the TiO2 grains while maintaining the desired porous structure in the films. The photoluminescence spectra show that adding Ag reduces the emission intensity by a factor of two. This indicates that Ag atoms act as traps to capture electrons and inhibit recombination of electron-hole pairs, which is desirable for photo-voltaic applications. 4) To obtain and study room temperature contamination free ferromagnetic spintronic materials, defect induced and Fe doped MgO and ZnO were synthesized ‘in-situ’ by precursor solution technique (preprints). It is found that the origin of magnetism in these materials (APL 2012 and MRS 2012) is intrinsic and probably due to charge transfer hole doping. 5) ITO thin films were fabricated via inkjet printing directly from liquid precursors. The films are highly transparent (transparency >90% both in the visible and IR range, which is rather unique as compared to any other film growth technique) and conductive (resistivity can be ~0.03 Ω•cm). The films have nano-porous structure, which is an added bonus from ink jetting that makes such films applicable for a broad range of applications. One example is in implantable biomedical components and lab-on-chip architectures where high transparency of the well conductive ITO electrodes makes them easily compatible with the use of quantum dots and fluorescent dyes. In summary, the inkjet patterning technique is incredibly versatile and applicable for a multitude of metal and oxide deposition and patterning. Especially in the case of using acetate solutions as inks (a method demonstrated for the first time by our group), the oxide films can be prepared ‘in-situ’ by direct patterning on the substrate without any prior synthesis stages, and the fabricated films are stoichiometric, uniform and smooth. This technique will most certainly continue to be a versatile tool in industrial manufacturing processes for material deposition in the future, as well as a unique fabrication tool for tailorable functional components and devices.<br><p>QC 20120907</p>
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Wang, Lei. "Exploratory synthesis and characterization of a new class of mixed-anion framework chalcohalides and oxyhalide and its potential applications for diluted magnetic semiconductors." Connect to this title online, 2007. http://etd.lib.clemson.edu/documents/1181668846/.
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Hellsvik, Johan. "Atomistic Spin Dynamics, Theory and Applications." Doctoral thesis, Uppsala universitet, Materialteori, 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-120103.
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The topic of this Thesis is magnetization dynamics on atomic length scales. A computational scheme, Atomistic Spin Dynamics, based on density functional theory, the adiabatic approximation and the atomic moment approximation is presented. Simulations are performed for chemically disordered systems, antiferromagnets and ferrimagnets and also systems with reduced dimensionality The autocorrelation function of the archetypical spin glass alloy CuMn is sampled in simulations following a quenching protocol. The aging regime can be clearly identified and the dependence of the relaxation on the damping parameter is investigated. The time evolution of pair correlation and autocorrelation functions has been studied in simulations of the dilute magnetic semiconductor GaMnAs. The dynamics reveal a substantial short ranged magnetic order even at temperatures at or above the ordering temperature. The dynamics for different concentrations of As antisites are discussed. Antiferromagnets offer opportunities for ultrafast switching, this is studied in simulations of an artificial antiferromagnet. For the right conditions, the cooperative effect of applied field torque and and the torque from the other sublattice enables very fast switching. The dynamics of bcc Fe precessing in a strong uniaxial anisotropy are investigated. It is demonstrated that the magnetization can shrink substantially due to a spin wave instability. The dynamics of a two-component model ferrimagnet at finite temperature are investigated. At temperatures where the magnetic system is close to the magnetic and angular momentum compensations points of the ferrimagnet, the relaxation in a uniaxial easy exis anisotropy resembles results in recent experiments on ferrimagnetic resonance. The different cases of uniaxial or colossal magnetic anisotropy in nanowires at different temperatures are compared. The magnon softening in a ferromagnetic monolayer is investigated, giving results that compare well with recent experiments. The effect of lattice relaxation can be treated in first principles calculations. Subsequent simulations captures the softening of magnons caused by reduced dimensionality and temperature.<br>Felaktigt tryckt som Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology 706
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Pereira, MaurÃcio de Sousa. "SÃntese e caracterizaÃÃo estrutural de Ãxidos semicondutores magnÃticos diluÃdos do tipo SnO2 dopados com Mn, Fe e Co produzidos pelo mÃtodo sol-gel protÃico." Universidade Federal do CearÃ, 2013. http://www.teses.ufc.br/tde_busca/arquivo.php?codArquivo=9604.
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Conselho Nacional de Desenvolvimento CientÃfico e TecnolÃgico<br>O desenvolvimento de semicondutores magnÃticos tÃm despertado crescente interesse dos pesquisadores devido suas promissoras aplicaÃÃo na spintrÃnica. Estes semicondutores podem ser produzidos a partir da dopagem de semicondutor nÃo magnÃtico com Ãons de metais de transiÃÃo. Neste trabalho, difraÃÃo de raios-x e espectroscopia no infravermelho foram utilizados para estudar as caracterÃsticas estruturais de Ãxidos semicondutores magnÃticos diluÃdos nanoestruturados do tipo SnO2 dopados com Fe, Co ou Mn, produzidos pelo mÃtodo sol-gel proteico. PadrÃes nanoestruturados de SnO2 sem dopagem foram produzidos com temperaturas de calcinaÃÃo de 300, 350 e 400ÂC para servir de base de comparaÃÃo. Foram sintetizadas sÃries de amostras com fÃrmula geral Sn1−x Mx O2−δ , onde M Ã o elemento magnÃtico (Fe, Co ou Mn) e x a concentraÃÃo de dopante, com as mesmas temperaturas de calcinaÃÃo e com trÃs concentraÃÃes de dopante (5, 10 e 20%). A difraÃÃo de raios-x foi utilizada para identificar as fases do composto assim como calcular os parÃmetros estruturais, tamanhos de cristalito e microdeformaÃÃes residuais. A anÃlise indicou que a sÃntese resultou na obtenÃÃo de compostos com estrutura SnO2 com dimensÃes nanomÃtricas. Amostras calcinadas a 400ÂC apresentaram a presenÃa de fases espÃrias. A dopagem foi confirmada pela variaÃÃo dos parÃmetros de rede dos compostos em funÃÃo do tipo e concentraÃÃo dos dopantes. Os modos vibracionais das ligaÃÃes quÃmicas nos compostos foram identificados por espectroscopia infravermelho. Com base nesta anÃlise, foi possÃvel estudar o comportamento energÃtico das ligaÃÃes iÃnicas quando os elementos dopantes estÃo incorporados em sÃtios de Ãons Sn4+ na matriz hospedeira.<br>The development of magnetic semiconductors has arisen growing attention due to their promising applications in spintronics. These materials can be produced by doping of a
non-magnetic semiconductor with magnetic ions of transition metals. In this work, x-ray diffraction and infrared spectroscopy were used to study the structural characteristics of nanostructured Fe, Co or Mn-doped SnO2 oxide diluted magnetic semiconductors. The material was produced by a protein based sol-gel method called proteic sol-gel. To provide a basis for comparison, nanostructured standards of undoped SnO2 were produced with calcination temperatures of 300, 350 and 400◦ C. Samples of Sn1−x Mx O2−δ , where M is the magnetic dopant (Fe, Co or Mn) and x the dopant concentration, were prepared with the same calcination temperatures and x = 5, 10 and 20%. X-ray diffraction was used to identify the crystalline phases in the samples as well as to calculate structural parameters,
particle sizes and residual microstrain. The analysis indicated that the synthesis resulted in nanosized compounds with the SnO2 structure. Samples calcined at 400◦ C presented the presence od spurious phases. Doping was confirmed by the variation of lattice parameters of compounds as a function of type and concentration of dopants. Vibrational modes of chemical bonds were identified by infrared spectroscopy. Based on this analysis,
it was possible to study the energetic behavior of ionic bonds when doping elements are incorporated in Sn4+ sites in the host matrix.
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Mendes, Udson Cabral 1984. "Electronic and optical properties of diluted magnetic semiconductors quantum wells and quantum dots = Propriedades eletrônicas e ópticas de poços quânticos e pontos quânticos de semicondutores magnéticos diluídos." [s.n.], 2014. http://repositorio.unicamp.br/jspui/handle/REPOSIP/276958.
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Orientador: José Antônio Brum<br>Tese (doutorado) - Universidade Estadual de Campinas, Instituto de Física Gleb Wataghin<br>Made available in DSpace on 2018-08-24T13:58:03Z (GMT). No. of bitstreams: 1
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Previous issue date: 2014<br>Resumo: Nesta tese, investigamos teoricamente as propriedades eletrônicas e ópticas de poços quânticos e pontos quânticos de semicondutores magnéticos diluídos. Este estudo é fortemente motivado por muitos resultados experimentais sobre as propriedades ópticas desse materiais. Usando a teoria do funcional da densidade dependente de spin descrevemos os estados eletrônicos como função do campo magnético externo para poços quânticos que possuem barreiras dopadas com impurezas magnéticas. Nosso modelo leva em conta os efeitos de muitos-corpos do gás de buracos e as interações entre portadores e os íons magnéticos. Comparamos nossos resultados com os dados experimentais disponíveis, que apresentam forte oscilações da luz polarizada circularmente como função do campo magnético. Nossos resultados apresentam excelente concordância qualitativa e quantitativa com os resultados experimentais. Mostramos que os efeitos de troca do gás de buraco são responsáveis pela forte oscilação observada na fotoluminescência. Também realizamos uma investigação sistemática dos parâmetros da heteroestrutura afim de aumentar a interação de troca entre portadores e íons de Mn. Com o nosso modelo entedemos os diferentes regimes de relaxação de spin do elétron em poços quânticos com barreiras dopadas com impurezas magnéticas. Nós também investigamos as propriedades eletrônicas e ópticas de pontos quânticos carregados dopados com uma única impureza magnética em seu centro. Usando métodos de diagonalização exata mostramos que os elétrons que não estão diretamente acoplados com o íon de Mn acoplam-se via uma interação indireta que é mediada pela interação elétron-elétron. Este acoplamento indireto entre elétrons e Mn pode ser tanto ferromagnético quanto antiferromagnético dependendo de ambos confinamento e número de camadas eletrônicas confinadas no ponto quântico. Demonstramos que este acoplamento indireto é um efeito importante mesmo quanto o íon de Mn não esta no centro do ponto quântico. O acoplamento indireto existe independentemente do tipo de interação direta entre portadores e a impureza magnética. Também extendemos a teoria de fotoluminescência para essa heteroestrutura. Observamos que a interação indireta entre portadores e íon magnético gera uma estrutura fina em ambos os estados iniciais e finais da emissão, o que nos permite determinar o número de camadas confinadas no ponto quântico e o spin eletrônico. Com esse método de diagonalização exata, explicamos a origem da estrutura fina do biexciton confinado em um ponto quântico dopado com uma única impureza magnética<br>Abstract: In this thesis, we theoretically investigate the electronic and optical properties of diluted magnetic semiconductors quantum wells and quantum dots. This is strongly motivated by many experimental results on the optical properties of these materials. Using spin-density functional theory we described the electronic states as a function of the external magnetic field for quantum wells which have barriers doped with magnetic impurities. Our model takes into account the many-body effects of the two-dimensional hole gas and the interaction between carriers and the magnetic ions. We compare our findings with the available experimental data, which shows strong oscillations in the circularly polarized light as a function of the magnetic field. Our results show excellent qualitative and quantitative agreement with the experimental data. We show that the hole gas exchange effects are responsible for the strong oscillations observed in the photoluminescence. We perform a systematic investigation of the heterostructure parameters in order to enhance the carriers-Mn exchange interaction. With our model we understand the different regime of the electron¿s spin relaxation in quantum wells with barriers doped with Mn impurities. We also investigate the electronic and optical properties of charged quantum dots doped with a single magnetic impurity in its center. Using an exact diagonalization method we show that the electrons that are not directly coupled with Mn do so via an indirect coupling mediated by electron-electron interaction. This indirect electron-Mn coupling can be either ferromagnetic or antiferromagnetic depending on both quantum dot confinement and the number of electronic confined shells. We also demonstrate that the indirect electron-Mn coupling is an important effect even when Mn is off-center. This coupling exists independently of the type of the direct interaction between carriers and Mn impurity. We also extend the theory of photoluminescence for charged quantum dots containing a single magnetic impurity. We show that the indirect interaction between carriers and magnetic ion generates a fine structure in both initial and final states of the emission, which allows us to determinate the number of confined shells in the quantum dots and the electronic spins. Whit this exact diagonalizationmethod, we explain the origin of the fine structure of a biexciton confined in quantum dot containing a single Mn impurity<br>Doutorado<br>Física<br>Doutor em Ciências
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Chey, Chan Oeurn. "Synthesis of ZnO and transition metals doped ZnO nanostructures, their characterization and sensing applications." Doctoral thesis, Linköpings universitet, Fysik och elektroteknik, 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-113237.
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Nanotechnology is a technology of the design and the applications of nanoscale materials with their fundamentally new properties and functions. Nanosensor devices based on nanomaterials provide very fast response, low-cost, long-life time, easy to use for unskilled users, and provide high-efficiency. 1-D ZnO nanostructures materials have great potential applications in various sensing applications. ZnO is a wide band gap (3.37 eV at room temperature) semiconductor materials having large exciton binding energy (60 meV) and excellent chemical stability, electrical, optical, piezoelectric and pyroelectric properties. By doping the transition metals (TM) into ZnO matrix, the properties of ZnO nanostructures can be tuned and its room temperature ferromagnetic behavior can be enhanced, which provide the TM-doped ZnO nanostructures as promising candidate for optoelectronic, spintronics and high performance sensors based devices. The synthesis of ZnO and TM-doped ZnO nanostructures via the low temperature hydrothermal method is considered a promising technique due to low cost, environmental friendly, simple solution process, diverse 1-D ZnO nanostructures can be achieved, and large scale production on any type of substrate, and their properties can be controlled by the growth parameters. However, to synthesize 1-D ZnO and TM-doped ZnO nanostructures with controlled shape, structure and uniform size distribution on large area substrates with desirable properties, low cost and simple processes are of high interest and it is a big challenge at present. The main purpose of this dissertation aims to develop new techniques to synthesize 1-D ZnO and (Fe, Mn)-doped ZnO nanostructures via the hydrothermal method, to characterize and to enhance their functional properties for developing sensing devices such as biosensors for clinical diagnoses and environmental monitoring applications, piezoresistive sensors and UV photodetector. The first part of the dissertation deals with the hydrothermal synthesis of ZnO nanostructures with controlled shape, structure and uniform size distribution under different conditions and their structural characterization. The possible parameters affecting the growth which can alter the morphology, uniformity and properties of the ZnO nanostructures were investigated. Well-aligned ZnO nanorods have been fabricated for high sensitive piezoresistive sensor. The development of creatinine biosensor for clinical diagnoses purpose and the development of glucose biosensor for indirect determination of mercury ions for an inexpensive and unskilled users for environmental monitoring applications with highly sensitive, selective, stable, reproducible, interference resistant, and fast response time have been fabricated based on ZnO nanorods. The second part of the dissertation presents a new hydrothermal synthesis of (Fe, Mn)-doped-ZnO nanostructures under different preparation conditions, their properties characterization and the fabrication of piezoresistive sensors and UV photodetectors based devices were demonstrated. The solution preparation condition and growth parameters that influences on the morphology, structures and properties of the nanostructures were investigated. The fabrication of Mn-doped-ZnO NRs/PEDOT:PSS Schottky diodes used as high performance piezoresistive sensor and UV photodetector have been studied and Fe-doped ZnO NRs/FTO Schottky diode has also been fabricated for high performance of UV photodetector. Finally, a brief outlook into future challenges and relating new opportunities are presented in the last part of the dissertation.
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MACHADO, Lucius Vinicius Rocha. "Avaliação do tipo de precursor e da dopagem no sistema Zn1-ₓFeₓO visando a obtenção de semicondutores magnéticos diluídos (SMDs)". Universidade Federal de Campina Grande, 2015. http://dspace.sti.ufcg.edu.br:8080/jspui/handle/riufcg/1038.
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Previous issue date: 2015-12-18<br>Esse trabalho teve como objetivo, avaliar a influência do tipo de precursor, fonte de íons de ferro, e sua concentração na dopagem do sistema Zn1-xFexO de modo a se obter um produto com ferrimagnetismo a temperatura ambiente para uso como semicondutor magnético diluído. Para esse fim, inicialmente avaliou-se a influência do tipo de precursor (nitrato de ferro III, sulfato de ferro II e acetato de ferro II) sobre a estrutura, morfologia, propriedades térmicas e magnéticas do sistema Zn1-xFexO com concentração de íons de Fe2+ e Fe3+ de 0,4 mol. Posteriormente avaliou-se o efeito da concentração de íons de ferro III variando de 0,05 a 0,4 mol sobre a estrutura e magnetismo do sistema Zn1- xFexO. Durante as reações para obtenção do produto foram feitas medições de temperatura e do tempo de reação. As amostras foram caracterizadas por: difração de raios X, análise química por fluorescência de raios X por energia dispersiva, microscopia eletrônica de varredura com mapeamento por EDS, distribuição granulométrica, análise por adsorção de nitrogênio, magnetometria de amostra vibrante e análise termogravimétrica. Os resultados mostraram que o tipo de precursor influenciou diretamente na estrutura, morfologia e magnetismos das amostras, sendo o precursor nitrato de ferro III o que possibilitou à formação de um material ferrimagnético a temperatura ambiente. Para as amostras dopadas, os espectros de DRX mostraram que até a concentração de 0,20 mol de íons ferro III resultou num sistema monofásico com comportamento ferrimagnético à temperatura ambiente, o que caracterizou a formação de um semicondutor magnético diluído. Para demais concentrações foi observado traços da fase FeFe2O4 e que às interações de troca entre os íons Fe - Fe e possivelmente o aumento da concentração de vacância de oxigênio na rede do ZnO suprimiu o comportamento ferrimagnético pela competição do comportamento ferrimagnético/paramagnético. Portanto, pode-se concluir que o precursor nitrato de ferro III com concentração de até 0,20 mol foi a melhor condição para obtenção de produto com característica para uso como semicondutor magnético diluído usando a técnica de síntese por reação de combustão.<br>The objective of this study is to evaluate the influence the type of precursor, source of iron ions, and its concentration in the doping Zn1-xFexO system in order to obtain a product with ferromagnetism at room temperature for use as magnetic semiconductor diluted. For this purpose, it was firstly evaluated the influence of the type of precursor (iron III nitrate, iron sulfate II, iron acetate II) on the structure, morphology, thermal and magnetic properties of Zn1-xFexO system concentration of Fe2+ and Fe3+ ions of 0.4 mol. After that, it was evaluated the effect of concentration of iron III ions ranging from 0.05 to 0.4 mol on the structure and magnetism of Zn1-xFexO system. During the reactions, there were made measurements of temperature and time. The samples were characterized by: X-ray diffraction, chemical analysis by fluorescence X-ray energy dispersive, scanning electron microscopy, with mapping by EDS, particle size analysis, analysis by nitrogen adsorption, vibrating sample magnetometer and thermal gravimetric analysis. The results have shown that the type of precursor influenced directly the structure, morphology and magnetism of the samples and the precursor of iron nitrate III was the one which favored the obtention of the ferromagnetism material monophasic at room temperature. For the doped samples, the XRD spectra showed that the concentrations until 0.20 mol of iron III ions resulted in a monophasic system with ferromagnetic behavior at room temperature, which characterized the formation of a diluted magnetic semiconductor. For the other concentrations, it was observed traces of MnFe2O4 phase and that the exchange interactions between the ionsFe - Fe and possibly the increasing of oxygen vacancy concentration in ZnO network suppressed the ferromagnetic behavior by the competition of ferromagnetic / paramagnetic one. Therefore, it can be concluded that the precursor of iron III nitrate concentration to 0.20 mol was the best condition for obtaining a product with characteristics for use as a dilute magnetic semiconductor using the synthetic technique by combustion.
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Schell, Juliana. "Investigação de parâmetros hiperfinos dos óxidos semicondutores SnO2 e TiO2 puros e dopados com metais de transição 3d pela espectroscopia de correlação angular gama-gama perturbada." Universidade de São Paulo, 2015. http://www.teses.usp.br/teses/disponiveis/85/85131/tde-24032015-135507/.
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O presente trabalho teve como objetivo utilizar a técnica nuclear de Correlação Angular γ-γ Perturbada (CAP) para a medida de interações hiperfinas em filmes finos e amostras em pó de óxidos semicondutores SnO2 e TiO2 puros e dopados com metais de transição para uma investigação sistemática de defeitos estruturais e do magnetismo sob o ponto de vista atômico tendo como principal motivação a candidatura à aplicação desses óxidos em spintrônica. O trabalho também teve como foco a preparação e caracterização das amostras por meio de técnicas convencionais, como difração de raios X, microscopia eletrônica de varredura, espectroscopia de energia dispersiva e medidas de magnetização. Amostras puras dos filmes foram medidas mediante a variação sistemática da temperatura de tratamento térmico e do campo magnético aplicado. Tais medidas foram realizadas no HISKP, na Universidade de Bonn (Rheinische Friedrich-Wilhelms-Universität Bonn), através de implantação de íons de 111In(111Cd) ou 181Hf(181Ta); no IPEN, por sua vez, essas medidas foram realizadas após a difusão dos mesmos núcleos de prova. Outra parte das medidas CAP foram feitas através de implantação de íons de 111mCd(111Cd) e 117Cd(117In) no Isotope Mass Separator On-Line (ISOLDE) do Centre Européen Recherche Nucléaire (CERN). As medidas foram realizadas nos intervalos de temperatura de 8 K a 1173 K. Para análise de ferromagnetismo, medidas foram feitas à temperatura ambiente com e sem aplicação de campo magnético externo. Após a comparação dos resultados das medidas macroscópicas e atômicas das amostras, foi possível concluir que há uma correlação entre os defeitos, o magnetismo e a mobilidade dos portadores de carga nos semicondutores aqui estudados. Um passo adiante na busca de semicondutores, cujo ordenamento magnético possibilite o seu uso na eletrônica baseada em spin. Alguns resultados já foram publicados, incluindo resultados obtidos na Universidade de Bonn durante o período de doutorado sanduíche [1-7].<br>This study aimed the use of nuclear technique Perturbed γ-γ Angular Correlation Spectroccopy (PAC) to measure the hyperfine interactions in thin films and powder samples of SnO2 and TiO2 pure and doped with transition metals to obtain a systematic investigation of defects and magnetism from an atomic point of view with the main motivation the application in spintronics. The work also focused on the preparation and characterization of samples by conventional techniques such as X-ray diffraction, scanning electron microscopy, energy dispersive spectroscopy and magnetization measurements. Pure samples of the films were measured by the systematic variation of thermal treatment and applied magnetic field. These measurements were performed in HISKP at the University of Bonn (Rheinische Friedrich-Wilhelms-Universität Bonn) using 111In(111Cd) or 181Hf (181Ta); at IPEN, in turn, these measurements were performed after the diffusion of the same probe nuclei. Another part of PAC measurements were carried out using 111mCd(111Cd) and 117Cd (117In) in Isotope Mass Separator On-Line (ISOLDE) at Centre Européen Recherche Nucléaire (CERN). The measurements were performed from 8 K to 1173 K. After comparing results from macroscopic techniques with those from PAC, it was concluded that there is a correlation between the defects, magnetism and the mobility of charge carriers in semiconductors studied here. A step forward in the search for semiconductors, whose magnetic ordering allows its use in electronics based on spin. Some results have been published, including results obtained at the University of Bonn for the sandwich doctorate period [1-7].
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Le, thi Giang. "Synthèse par épitaxie et propriétés magnétiques des semiconducteurs ferromagnétiques dilués à base de GeMn." Thesis, Aix-Marseille, 2012. http://www.theses.fr/2012AIXM4026.
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Le développement des dispositifs issus de l'électronique de spin nécessite de nouveaux matériaux qui permettent d'injecter de manière efficace le courant polarisé en spin dans des semiconducteurs. Parmi de nombreux matériaux utilisés comme injecteurs de spin, les semiconducteurs ferromagnétiques dilués (DMS), obtenus en dopant des semiconducteurs avec des impuretés magnétiques tels que Mn ou Co, sont considérés comme des candidats potentiels pour l'injection de spin. Ces matériaux dopés deviennent ferromagnétiques tout en conservant leurs propriétés semiconductrices. Par conséquent, ils présentent une similarité d'impédance électrique par rapport aux substrats semiconducteurs, ce qui rend efficace l'injection de courant polarisé en spin dans ces derniers. Dans ce contexte, l'objectif principal de cette thèse consiste à étudier la cinétique de croissance des semiconducteurs ferromagnétiques dilués GeMn. Nous cherchons à déterminer les paramètres clés de la croissance des couches de GeMn, à savoir la température du substrat, et la concentration en Mn. Pour la fabrication de dispositifs électroniques fonctionnels, le challenge crucial est d'obtenir des DMS ayant une température de Curie (TC) bien supérieure à la température ambiante. Nous nous sommes donc concentrés sur la cinétique de formation de la phase nanocolonnaire GeMn possédant une TC au-delà de 400 K<br>The development of active spintronic devices requires new materials, which enable to efficiently inject spin-polarized currents into non-magnetic semiconductors. Among numerous materials that can be used as spin injectors, diluted magnetic semiconductors (DMS), obtained by doping standard semiconductors with magnetic impurities, such as Mn or Co, have emerged as potential candidates for spin injection. The materials become ferromagnetic while conserving their semiconducting properties. They exhibit therefore natural impedance match to host semiconductors and are expected to efficiently inject spin-polarized currents into semiconductors. In this context, the main objectives of this thesis work consist in studying the growth kinetics of GeMn-based diluted magnetic semiconductors. We aim at determining the main growth parameters, such as the substrate temperature and the Mn concentration, that govern the growth process of GeMn layers. Since for device applications it is crucial to obtain DMS exhibiting a Curie temperature (TC) well above room temperature, we have focused our attention to the kinetic formation of the GeMn nanocolumn phase, which exhibits a Curie temperature higher than 400 K
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Dagnelund, Daniel. "Magneto-optical studies of dilute nitrides and II-VI diluted magnetic semiconductor quantum structures." Doctoral thesis, Linköpings universitet, Funktionella elektroniska material, 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-54695.
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This thesis work aims at a better understanding of magneto-optical properties of dilute nitrides and II-VI diluted magnetic semiconductor quantum structures. The thesis is divided into two parts. The first part gives an introduction of the research fields, together with a brief summary of the scientific results included in the thesis. The second part consists of seven scientific articles that present the main findings of the thesis work. Below is a short summary of the thesis. Dilute nitrides have been of great scientific interest since their development in the early 1990s, because of their unusual fundamental physical properties as well as their potential for device applications. Incorporation of a small amount of N in conventional Ga(In)As or Ga(In)P semiconductors leads to dramatic modifications in both electronic and optical properties of the materials. This makes the dilute nitrides ideally suited for novel optoelectronic devices such as light emitting devices for fiber-optic communications, highly efficient visible light emitting devices, multi-junction solar cells, etc. In addition, diluted nitrides open a window for combining Si-based electronics with III-V compounds-based optoelectronics on Si wafers, promising for novel optoelectronic integrated circuits. Full exploration and optimization of this new material system in device applications requires a detailed understanding of their physical properties. Papers I and II report detailed studies of effects of post-growth rapid thermal annealing (RTA) and growth conditions (i.e. presence of N ions, N2 flow, growth temperature and In alloying) on the formation of grown-in defects in Ga(In)NP. High N2 flow and bombardment of impinging N ions on grown sample surface is found to facilitate formation of defects, such as Ga interstitial (Gai) related defects, revealed by optically detected magnetic resonance (ODMR). These defects act as competing carrier recombination centers, which efficiently decrease photoluminescence (PL) intensity. Incorporation of a small amount of In (e.g. 5.1%) in GaNP seems to play a minor role in the formation of the defects. In GaInNP with 45% of In, on the other hand, the defects were found to be abundant. Effect of RTA on the defects is found to depend on initial configurations of Gai related defects formed during the growth. In Paper III, the first identification of an interfacial defect at a heterojunction between two semiconductors (i.e. GaP/GaNP) is presented. The interface nature of the defect is clearly manifested by the observation of ODMR lines originating from only two out of four equivalent <111> orientations. Based on its resolved hyperfine interaction between an unpaired electronic spin (S=1/2) and a nuclear spin (I=1/2), the defect is concluded to involve a P atom at its core with a defect/impurity partner along a <111> direction. Defect formation is shown to be facilitated by N ion bombardment. In Paper IV, the effects of post-growth hydrogenation on the efficiency of the nonradiative (NR) recombination centers in GaNP are studied. Based on the ODMR results, incorporation of H is found to increase the efficiency of the NR recombination via defects such as Ga interstitials. In Paper V, we report on our results from a systematic study of layered structures containing an InGaNAs/GaAs quantum well, by the optically detected cyclotron resonance (ODCR) technique. By monitoring PL emissions from various layers, the predominant ODCR peak is shown to be related to electrons in GaAs/AlAs superlattices. This demonstrates the role of the SL as an escape route for the carriers confined within the InGaNAs/GaAs single quantum well. The last two papers are within a relatively new field of spintronics which utilizes not only the charge (as in conventional electronics) but also the quantum mechanical property of spin of the electron. Spintronics offers a pathway towards integration of information storage, processing and communications into a single technology. Spintronics also promises advantages over conventional charge-based electronics since spin can be manipulated on a much shorter time scale and at lower cost of energy. Success of semiconductor-based spintronics relies on our ability to inject spin polarized electrons or holes into semiconductors, spin transport with minimum loss and reliable spin detection. In Papers VI and VII, we study the efficiency and mechanism for carrier/exciton and spin injection from a diluted magnetic semiconductor (DMS) ZnMnSe quantum well into nonmagnetic CdSe quantum dots (QD’s) by means of spin-polarized magneto PL combined with tunable laser spectroscopy. By means of a detailed rate equation analysis presented in Paper VI, the injected spin polarization is deduced to be about 32%, decreasing from 100% before the injection. The observed spin loss is shown to occur during the spin injection process. In Paper VII, we present evidence that energy transfer is the dominant mechanism for carrier/exciton injection from the DMS to the QD’s. This is based on the fact that carrier/exciton injection efficiency is independent of the width of the ZnSe tunneling barrier inserted between the DMS and QD’s. In sharp contrast, spin injection efficiency is found to be largely suppressed in the structures with wide barriers, pointing towards increasing spin loss.
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Baykov, Vitaly. "Point defect interactions and structural stability of compounds." Doctoral thesis, Stockholm Stockholm : Materialvetenskap, Kungliga Tekniska högskolan, 2007. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-4605.
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Giddings, Alexander Devin. "Dilute magnetic semiconductor nanostructures." Thesis, University of Nottingham, 2008. http://eprints.nottingham.ac.uk/10521/.
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The prospect of a new generation of electronic devices based on the fundamental quantum property of angular momentum, known as spin, has led to the rapidly developing field of spintronics. It is envisioned that these advanced devices will have significant advantages over traditional charge based electronics in properties such as speed, power consumption and long coherence times. By combining the properties of magnetics with that of semiconductors, the novel class of materials known as dilute magnetic semiconductors (DMSs) are considered a promising system for exhibiting spintronic functionality. These materials are created by using molecular beam epitaxy (MBE) to incorporate into traditional semiconductors a quantity of transition metal atoms sufficient that ferromagnetism is exhibited. The most widely studied DMS is (Ga,Mn)As which has well characterised behaviour and can be processed using standard III-V fabrication techniques, thus providing an excellent basis for further study. In this research the properties of (Ga,Mn)As based systems are studied as the material dimensions are reduced to nanometre length scales. Three complementary approaches are used for this purpose. The first is to use ultra-high-resolution electron-beam lithography to construct devices. By being able to selectively remove material, laterally patterned structures can have sizes as small as 10 nm. The second approach is to exploit the atomic layer growth of MBE to allow the construction of epilayers and heterostructures with well defined vertical compositions. Thirdly, a theoretical k.p kinetic-exchange model allows the simulation of multilayer structures and an exploration of the parameter spaces available in such materials. Two systems are considered: lateral nanoconstricted magnetic tunnel junctions and vertically defined magnetic superlattices. The nanoconstrictions are analysed using low temperature magnetotransport techniques and novel anisotropic magnetoresistance (MR) effects are measured. Primarily, tunnelling anisotropic magnetoresistance (TAMR) is observed, demonstrating that it is a generic property of ferromagnetic tunnel devices and is therefore of wide interest for other spintronic systems. Secondarily, anisotropic switching behaviour is observed and is interpreted as Coulomb blockade anisotropic magnetoresistance (CBAMR). Additionally, the significance of the processing stages and material properties are highlighted. The magnetic superlattices are firstly considered on a theoretical basis in order to determine structural parameters in which a new MR effect might be observed. This effect derives from the interlayer exchange coupling (IEC) between the magnetic layers which can either be in parallel or opposed orientations. Based on the calculations, samples are measured using low temperature magnetotransport and magnetometry techniques in order to explore the possibility of some of the dramatic properties predicted in magnetic superlattice structures.
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Khazen, Khashayar. "Ferromagnetic resonance investigation of GaMnAs nanometric layers." Paris 6, 2008. https://tel.archives-ouvertes.fr/tel-00329331v2.
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Cette thèse est dédiée à l’étude des propriétés magnétiques des couches nanométriques de GaMnAs par Résonance ferromagnétique (RFM). Trois séries des échantillons sont étudiées afin d' élucider l’influence des contraintes, la concentration des trous et la concentration de manganèse, sur les propriétés magnétiques de GaMnAs. Dans la première série, les échantillons de Ga1-xMnxAs avec x=0. 07 déposés sur les substrats de GaAs (en compression) et GaInAs (en extension) sont étudiés. Les résultats des mesures de l’aimantation, la résistivité et l’effet de Hall sont présentés. Les axes faciles de l’aimantation et le type d’anisotropie sont déterminés par mesures RFM. Les variations angulaires des spectres RFM sont étudiées en détails et le facteur g, la température de Curie et les constantes d’anisotropie sont déterminées en fonction de la température. La résonance des ondes de spin sont également observées et interprétées. Les observations sont comparées aux modèles phénoménologiques proposés et le spin stiffness et l’intégrale d’échange entre les ions de manganèse sont déduits. La deuxième étude concerne une série des échantillons de GaMnAs avec même niveau de dopage de Mn de 7% concentration atomique dont les concentrations de trous étaient variées via la passivation par l’hydrogène. Les concentrations des trous sont déduites des mesures d’effet Hall sous la condition de forts champs appliqués et à très basses températures. Les concentrations de trous mesurés correspondent aux différents régimes de conductivités ; de régime isolant aux régimes bande d’impureté et métallique. Les échantillons sont caractérisés par magnétométrie SQUID et les mesures de résistivité. L’aimantation en fonction de la concentration de trous est comparée aux prédictions du modèle RKKY. Les mesures de ERDA sont appliquées à la fin de déterminer la concentration de hydrogène dans l’échantillon ferromagnétique avec la concentration de trous la plus faible dans la série. La structure des domaines de cet échantillon est étudiée par microscopie magnéto-optique d’effet Kerr. Les spectres RFM sont analysés en détail et la concentration de trous correspondant à la formation de l’ordre ferromagnétique est estimée à 1019cm-3. Les facteurs g dépendent de la concentration de trous et la température. La relation entre les facteurs g et les polarisations de trous des échantillons calculées théoriquement est présentée. L’étude d’anisotropie des échantillons est fournie la détermination des constantes d’anisotropie magnétocrystallines en fonction de la concentration de trous et la température. Leurs variations sont comparées aux modèles théoriques. Les surfaces d’énergie sont déduites des constantes d’anisotropie magnétocrystallines mesurées, sont calculées en fonction de l’aimantation et les orientations et les grandeurs du champ appliqué. L’influence d’augmentation du niveau de dopage, de 7% à 21% concentration atomique est étudiée dans la troisième série des échantillons. Contrairement des prédictions théoriques, la température de Curie n’est pas augmentée en dessous de 180K. Les paramètres de RFM sont comparés à ceux des échantillon standard de GaMnAs avec 7% concentration atomique de Mn. La raison est attribuée au haut niveau de la compensation magnétique. Les mesures sont également comparées aux prédictions théoriques basées sur les approximations de champ moyen. La relaxation de l’aimantation est étudiée en fonction des contraintes, la concentration de trous et Mn aussi bien que la température. Les constantes de damping, sont trouvées d’être anisotropes. Cette anisotropie, dépend fortement aux procès dont contribution est la dominante pour une configuration particulaire du système<br>This thesis is dedicated to the study of the magnetic properties of GaMnAs nanometric layers by the ferromagnetic resonance (FMR) technique. Three series of samples have been studied to investigate independently the influence of the strain, the hole concentration and the Mn concentration on the magnetic properties of GaMnAs. In the first series, the Ga1-xMnxAs samples with x=0. 07, grown on GaAs (compressive strain) and GaInAs (tensile strain) substrates are studied. The results of magnetization, resistivity and Hall effect measurements are presented. From the FMR measurements the easy axes of magnetization and the type of magnetic anisotropy are determined. The angular variations of the FMR spectra are studied in detail and the g-factor, Curie temperature and the magnetocrystalline anisotropy constants are determined as function of temperature. Spin wave resonance were equally observed and interpreted. The observations are compared to the proposed phenomenological models and the spin stiffness and the exchange integral between the Mn ions are deducedThe second study concerns a series of GaMnAs samples with the same Mn doping level of 7% atomic concentration in which the hole concentrations was varied via a hydrogen passivation technique. The hole concentrations are deduced from Hall effect measurements in high fields and low temperatures. The measured hole concentrations correspond to different conductivity regimes from insulating to impurity band and metallic regimes. The samples are characterized by SQUID magnetometry and resistivity measurements. The magnetization as a function of hole concentration is compared to the predictions of the RKKY model. ERDA measurements are performed to determine the concentration of hydrogen in the ferromagnetic sample with the lowest hole concentration. The domain structure of this samples is investigated by magneto-optical Kerr effect microscopy. The FMR spectra are analyzed in details and the hole concentration corresponding to the onset of ferromagnetism is estimated to 1019cm-3. The g-factors depend on the hole concentration and temperature. The relation between the g-factors and the theoretically calculated hole polarization of the samples is presented. The anisotropy studies of the samples have provided the investigation of the magnetocrystalline anisotropy constants as a function of the hole concentration and the temperature. Their variations are compared to the theoretical models. The energy surfaces deduced from the measured magnetocrytalline anisotropy constants are calculated as a function of magnetization and applied field orientations and magnitudes. The influence of increasing the doping level from 7% to 21% atomic concentration is studied in the third series of samples. Contrary to the theoretical predictions, the critical temperature is not increased above 180K. The FMR parameters are compared to those of standard GaMnAs sample doped with 7%atomic concentration of Mn. The reason for no further increase in TC is attributed to high level of magnetic compensation. The measurements are also compared to the theoretical predictions based on the mean field approximations. The relaxation of the magnetization is studied as a function of strain, hole concentration, Mn concentration as well as temperature. The damping constants were found to be anisotropic. This anisotropy however depends strongly on the process whose contribution is dominant for a specific configuration of the system