Log in

Relevant bibliographies by topics / Diluted magnetic semiconductors / Journal articles

To see the other types of publications on this topic, follow the link: Diluted magnetic semiconductors.

Journal articles on the topic 'Diluted magnetic semiconductors'

Author: Grafiati

Published: 4 June 2021

Last updated: 15 June 2025

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the top 50 journal articles for your research on the topic 'Diluted magnetic semiconductors.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Browse journal articles on a wide variety of disciplines and organise your bibliography correctly.

1

Chen, Sheng. "Theory And Application of Gallium Nitride Based Dilute Magnetic Semiconductors." Highlights in Science, Engineering and Technology 81 (January 26, 2024): 286–90. http://dx.doi.org/10.54097/26qm0041.

Full text

Abstract:

Semiconductors are key components for the development of Industry 4.0 innovative technologies such as consumer electronics, data centers, intelligent new energy vehicles, and aerospace technology. Academic research on semiconductors can not only promote the development of electronics and electromagnetics, but also meet the demand for high-performance semiconductors in technological development. This paper provides a review of the theoretical and experimental research results on gallium nitride based diluted magnetic semiconductors, and prospects the future application prospects of gallium nitride based diluted magnetic semiconductors. This paper found that the theoretical prediction of gallium nitride based diluted magnetic semiconductors is generally believed to have good temperature conditions and advantages in thermal conductivity, electron mobility, breakdown voltage, and other aspects. The current experimental results also confirm that gallium nitride based diluted magnetic semiconductors can improve the limitations of semiconductors under room temperature conditions. This article believes that this semiconductor material has broad development potential in fields such as intelligent vehicles, aerospace, and cloud computing.

APA, Harvard, Vancouver, ISO, and other styles

2

Samarth, N., and J. K. Furdyna. "Diluted Magnetic Semiconductors." MRS Bulletin 13, no. 6 (1988): 32–36. http://dx.doi.org/10.1557/s0883769400065477.

Full text

Abstract:

Diluted magnetic semiconductors (DMS) are semiconducting alloys whose lattice is partly made of substitutional magnetic ions. The most extensively studied materials of this type are the alloys, in which a fraction of the group II sublattice is replaced at random by Mn. The entire family of ternary alloys, along with their crystal structure and corresponding ranges of composition, is listed in Table I. Over the past decade, these alloys have attracted a growing scientific interest because of new fundamental effects in semiconductor physics and magnetism in these materials and because of their potential applications in optical nonreciprocal devices, solid state lasers, flat panel displays, infrared detectors, and other optoelectronic applications.The increasing popularity of this field can be attributed to the broad variety of fascinating problems offered by the study of the alloys. To begin with, there is an interest in the semiconducting properties per se — for instance, the understanding of the electronic band structure and its variation with alloy composition. As in other ternary alloys, the band parameters and the lattice constant can be “tuned” by controlling the alloy composition, opening the door to band-gap engineering and lattice matching in the context of epitaxially grown superlattices and het-erostructures. The random distribution of Mn atoms with a well-characterized antiferromagnetic Mn-Mn exchange interaction provides an ideal system for studying fundamental questions in disordered magnetism. The sp-d exchange interaction between the spins of band electrons and the localized moments of the Mn atoms constitutes a unique interplay between semiconductor physics and magnetism. This leads to unusual magneto-transport and magneto-optic phenomena such as an extremely large Faraday rotation, giant negative magneto-resistance, and a magnetic-field-induced metal-insulator transition. Finally, the potential technological importance of DMS is also being recognized. For example, the large Faraday rotation holds promise of DMS applications as optical isolators, modulators, and circulators. We will briefly introduce some of the exciting research problems offered by the study of DMS. More detailed information is available in several extensive reviews and compendia.

APA, Harvard, Vancouver, ISO, and other styles

3

Samarth, N., and J. K. Furdyna. "Diluted magnetic semiconductors." Proceedings of the IEEE 78, no. 6 (1990): 990–1003. http://dx.doi.org/10.1109/5.56911.

Full text

APA, Harvard, Vancouver, ISO, and other styles

4

Furdyna, J. K. "Diluted magnetic semiconductors." Journal of Applied Physics 64, no. 4 (1988): R29—R64. http://dx.doi.org/10.1063/1.341700.

Full text

APA, Harvard, Vancouver, ISO, and other styles

5

Fan, Yan. "Recent progress in diluted ferromagnetism for spintronic application." Journal of Physics: Conference Series 2608, no. 1 (2023): 012046. http://dx.doi.org/10.1088/1742-6596/2608/1/012046.

Full text

Abstract:

Abstract With the continuous in-depth research of spintronics, the manufacture of high-performance magnetic random access memory devices and electronic devices that are more energy-efficient and generate less heat has received extensive attention. The traditional ferromagnet TbMnO3 is basically Tc at room temperature, which seriously limits its application. Since the discovery of diluted magnetic semiconductor materials at room temperature, such as AlNTiO2, ZnO, SnO2, etc., they have received increasing attention. Although these dopants can form ferromagnetism above-room temperature, the ferromagnetic mechanism and ferromagnetic properties are different. In this regard, we reviewed the current progress in the research on above room temperature dilute magnetic semiconductor materials; discussed the ferromagnetic mechanism of dilute magnetic semiconductors; summarized the problems and challenges, and advantages and disadvantages of different kinds of dilute magnetic semiconductor materials used in new memory devices; and prospected the application potential of spintronic devices.

APA, Harvard, Vancouver, ISO, and other styles

6

Ved M. V., Dorokhin M. V., Lesnikov V. P., et al. "Circularly polarized electroluminescence at room temperature in heterostructures based on GaAs:Fe diluted magnetic semiconductor." Technical Physics Letters 48, no. 13 (2022): 76. http://dx.doi.org/10.21883/tpl.2022.13.53370.18836.

Full text

Abstract:

In this work, we demonstrate the possibility of using a diluted magnetic semiconductor GaAs:Fe as a ferromagnetic injector in a spin light-emitting diode based on a GaAs/InGaAs quantum well heterostructure. It is shown that in such a device it is possible to observe partially circularly polarized electroluminescence at room temperature. Keywords: spin light-emitting diodes, diluted magnetic semiconductors, A3B5 semiconductors, spin injection.

APA, Harvard, Vancouver, ISO, and other styles

7

Jiao, Yu Zhang, Xin Chao Wang, Tao Zhang, Ke Fu Yao, Zheng Jun Zhang, and Na Chen. "Magnetic Semiconductors from Ferromagnetic Amorphous Alloys." Materials Science Forum 1107 (December 6, 2023): 111–16. http://dx.doi.org/10.4028/p-jim2w4.

Full text

Abstract:

Utilizing both charge and spin degrees of freedom of electrons simultaneously in magnetic semiconductors promises new device concepts by creating an opportunity to realize data processing, transportation and storage in one single spintronic device. Unlike most of the traditional diluted magnetic semiconductors, which obtain intrinsic ferromagnetism by adding magnetic elements to non-magnetic semiconductors, we attempt to develop room temperature magnetic semiconductors via a metal-semiconductor transition by introducing oxygen into three different ferromagnetic amorphous alloy systems. These magnetic semiconductors show different conduction types determined primarily by the compositions of the selected amorphous ferromagnetic alloy systems. These findings may pave a new way to realize magnetic semiconductor-based spintronic devices that work at room temperature.

APA, Harvard, Vancouver, ISO, and other styles

8

Hass, K. C., B. E. Larson, H. Ehrenreich, and A. E. Carlsson. "Magnetic interactions in diluted magnetic semiconductors." Journal of Magnetism and Magnetic Materials 54-57 (February 1986): 1283–84. http://dx.doi.org/10.1016/0304-8853(86)90819-x.

Full text

APA, Harvard, Vancouver, ISO, and other styles

9

de Jonge, W. J. M., and H. J. M. Swagten. "Magnetic properties of diluted magnetic semiconductors." Journal of Magnetism and Magnetic Materials 100, no. 1-3 (1991): 322–45. http://dx.doi.org/10.1016/0304-8853(91)90827-w.

Full text

APA, Harvard, Vancouver, ISO, and other styles

10

Kacman, P. "Spin interactions in diluted magnetic semiconductors and magnetic semiconductor structures." Semiconductor Science and Technology 16, no. 4 (2001): R25—R39. http://dx.doi.org/10.1088/0268-1242/16/4/201.

Full text

APA, Harvard, Vancouver, ISO, and other styles

11

Ivanov, V. A. "Diluted magnetic semiconductors and spintronics." Bulletin of the Russian Academy of Sciences: Physics 71, no. 11 (2007): 1610–12. http://dx.doi.org/10.3103/s1062873807110433.

Full text

APA, Harvard, Vancouver, ISO, and other styles

12

Blinowski, J., P. Kacman, and J. A. Majewski. "Superexchange in Diluted Magnetic Semiconductors." Materials Science Forum 182-184 (February 1995): 779–82. http://dx.doi.org/10.4028/www.scientific.net/msf.182-184.779.

Full text

APA, Harvard, Vancouver, ISO, and other styles

13

Munekata, H., H. Ohno, S. von Molnar, Armin Segmüller, L. L. Chang, and L. Esaki. "Diluted magnetic III-V semiconductors." Physical Review Letters 63, no. 17 (1989): 1849–52. http://dx.doi.org/10.1103/physrevlett.63.1849.

Full text

APA, Harvard, Vancouver, ISO, and other styles

14

Bryksa, V. P. "Diluted magnetic A1-xMnxB semiconductors." Semiconductor Physics, Quantum Electronics and Optoelectronics 7, no. 2 (2004): 119–28. http://dx.doi.org/10.15407/spqeo7.02.119.

Full text

APA, Harvard, Vancouver, ISO, and other styles

15

Twardowski, A. "Diluted Magnetic III-V Semiconductors." Acta Physica Polonica A 98, no. 3 (2000): 203–16. http://dx.doi.org/10.12693/aphyspola.98.203.

Full text

APA, Harvard, Vancouver, ISO, and other styles

16

Bhattacharjee, A. K. "Chromium-based diluted magnetic semiconductors." Physical Review B 49, no. 19 (1994): 13987–90. http://dx.doi.org/10.1103/physrevb.49.13987.

Full text

APA, Harvard, Vancouver, ISO, and other styles

17

Tripathi, G. S., B. G. Mahanty, and S. N. Behera. "Photomaganetization in diluted magnetic semiconductors." Phase Transitions 78, no. 1-3 (2005): 229–37. http://dx.doi.org/10.1080/01411590412331316564.

Full text

APA, Harvard, Vancouver, ISO, and other styles

18

SAMARTH, N., and J. K. FURDYNA. "ChemInform Abstract: Diluted Magnetic Semiconductors." ChemInform 22, no. 15 (2010): no. http://dx.doi.org/10.1002/chin.199115305.

Full text

APA, Harvard, Vancouver, ISO, and other styles

19

KOSSUT, J., and W. DOBROWOLSKI. "ChemInform Abstract: Diluted Magnetic Semiconductors." ChemInform 27, no. 25 (2010): no. http://dx.doi.org/10.1002/chin.199625325.

Full text

APA, Harvard, Vancouver, ISO, and other styles

20

Samarth, N., and J. K. Furdyna. "Erratum to: Diluted Magnetic Semiconductors." MRS Bulletin 13, no. 8 (1988): 29. http://dx.doi.org/10.1557/bf03546436.

Full text

APA, Harvard, Vancouver, ISO, and other styles

21

Hagston, W. E., T. Stirner, and J. Miao. "Localized magnetic polarons in diluted magnetic semiconductors." Journal of Applied Physics 82, no. 11 (1997): 5653–57. http://dx.doi.org/10.1063/1.366426.

Full text

APA, Harvard, Vancouver, ISO, and other styles

22

Hagston, W. E., T. Stirner, J. P. Goodwin, and P. Harrison. "Magnetic-field effects in diluted magnetic semiconductors." Physical Review B 50, no. 8 (1994): 5255–63. http://dx.doi.org/10.1103/physrevb.50.5255.

Full text

APA, Harvard, Vancouver, ISO, and other styles

23

Mohanty, Sunita, and S. Ravi. "Magnetic properties of -based diluted magnetic semiconductors." Solid State Communications 150, no. 33-34 (2010): 1570–74. http://dx.doi.org/10.1016/j.ssc.2010.05.045.

Full text

APA, Harvard, Vancouver, ISO, and other styles

24

Archer, Thomas, Chaitanya Das Pemmaraju, and Stefano Sanvito. "Magnetic properties of ZrO2-diluted magnetic semiconductors." Journal of Magnetism and Magnetic Materials 316, no. 2 (2007): e188-e190. http://dx.doi.org/10.1016/j.jmmm.2007.02.085.

Full text

APA, Harvard, Vancouver, ISO, and other styles

25

Maksymowicz, L. J., M. Lubecka, R. Szymczak, W. Powroźnik, and H. Jankowski. "Magnetic parameters of diluted magnetic semiconductors CdCr2Se4." Journal of Magnetism and Magnetic Materials 242-245 (April 2002): 924–27. http://dx.doi.org/10.1016/s0304-8853(01)01321-x.

Full text

APA, Harvard, Vancouver, ISO, and other styles

26

Shapira, Y. "Diluted Magnetic Semiconductors in High Magnetic Fields." Acta Physica Polonica A 87, no. 1 (1995): 107–17. http://dx.doi.org/10.12693/aphyspola.87.107.

Full text

APA, Harvard, Vancouver, ISO, and other styles

27

MIURA, N., Y. H. MATSUDA, and T. IKAIDA. "MEGAGAUSS CYCLOTRON RESONANCE IN SEMICONDUCTOR NANOSTRUCTURES AND DILUTED MAGNETIC SEMICONDUCTORS." International Journal of Modern Physics B 16, no. 20n22 (2002): 3399–404. http://dx.doi.org/10.1142/s0217979202014565.

Full text

Abstract:

We report the latest results of cyclotron resonance experiments on semiconductor nanostructures and diluted magnetic semiconductors (DMS) in very high magnetic fields up to 600 T produced by magnetic flux compression and the single turn coiled technique. Many new features were observed in the very high field range, such as characteristic behavior of low dimensional electrons, carrier dynamics or electron-electron interaction effects in quantum wells and quantum dot samples. In PbSe/PdEuTe quantum dots, which were regularly arranged to form an fcc superlattice, we observed an absorption peak with a splitting and a wavelength dependence of the absorption intensity. In DMS, such as CdMnTe and InMnAs, change of the carrier effective mass with Mn doping was studied in detail. We found anomalous mass increase with doping of magnetic ions. The amount of the observed mass increase cannot be explained by the k·p theory and suggests the importance of d-s or d-p hybridization.

APA, Harvard, Vancouver, ISO, and other styles

28

Dietl. "FERROMAGNETIC TRANSITION IN DILUTED MAGNETIC SEMICONDUCTORS." Condensed Matter Physics 2, no. 3 (1999): 495. http://dx.doi.org/10.5488/cmp.2.3.495.

Full text

APA, Harvard, Vancouver, ISO, and other styles

29

Slobodskyy, Dugaev, and Vieira. "FERROMAGNETIC ORDERING IN DILUTED MAGNETIC SEMICONDUCTORS." Condensed Matter Physics 5, no. 3 (2002): 531. http://dx.doi.org/10.5488/cmp.5.3.531.

Full text

APA, Harvard, Vancouver, ISO, and other styles

30

Harrison, P., J. M. Fatah, T. Stirner, and W. E. Hagston. "Alloy nonrandomness in diluted magnetic semiconductors." Journal of Applied Physics 79, no. 3 (1996): 1684–88. http://dx.doi.org/10.1063/1.360954.

Full text

APA, Harvard, Vancouver, ISO, and other styles

31

Sato, K., P. H. Dederichs, H. Katayama-Yoshida, and J. Kudrnovský. "Exchange interactions in diluted magnetic semiconductors." Journal of Physics: Condensed Matter 16, no. 48 (2004): S5491—S5497. http://dx.doi.org/10.1088/0953-8984/16/48/003.

Full text

APA, Harvard, Vancouver, ISO, and other styles

32

Felici, A. C., F. Lama, M. Piacentini, et al. "Photoacoustic spectroscopy of diluted magnetic semiconductors." Journal of Applied Physics 80, no. 12 (1996): 6925–30. http://dx.doi.org/10.1063/1.363766.

Full text

APA, Harvard, Vancouver, ISO, and other styles

33

Furdyna, J. K. "Diluted magnetic semiconductors: Issues and opportunities." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 4, no. 4 (1986): 2002–9. http://dx.doi.org/10.1116/1.574016.

Full text

APA, Harvard, Vancouver, ISO, and other styles

34

Triki, M., and S. Jaziri. "Electron states in diluted magnetic semiconductors." Superlattices and Microstructures 38, no. 2 (2005): 122–29. http://dx.doi.org/10.1016/j.spmi.2005.04.002.

Full text

APA, Harvard, Vancouver, ISO, and other styles

35

Jaroszyński, J., and T. Dietl. "Mesoscopic phenomena in diluted magnetic semiconductors." Materials Science and Engineering: B 84, no. 1-2 (2001): 81–87. http://dx.doi.org/10.1016/s0921-5107(01)00574-8.

Full text

APA, Harvard, Vancouver, ISO, and other styles

36

Bouzerar, Richard, and Georges Bouzerar. "Unified picture for diluted magnetic semiconductors." EPL (Europhysics Letters) 92, no. 4 (2010): 47006. http://dx.doi.org/10.1209/0295-5075/92/47006.

Full text

APA, Harvard, Vancouver, ISO, and other styles

37

Larson, B. E., K. C. Hass, H. Ehrenreich, and A. E. Carlsson. "Exchange mechanisms in diluted magnetic semiconductors." Solid State Communications 56, no. 4 (1985): 347–50. http://dx.doi.org/10.1016/0038-1098(85)90399-0.

Full text

APA, Harvard, Vancouver, ISO, and other styles

38

Furdyna, J. K. "Shallow centers in diluted magnetic semiconductors." Solid State Communications 53, no. 12 (1985): 1097–101. http://dx.doi.org/10.1016/0038-1098(85)90886-5.

Full text

APA, Harvard, Vancouver, ISO, and other styles

39

Seshadri, Ram. "Zinc oxide-based diluted magnetic semiconductors." Current Opinion in Solid State and Materials Science 9, no. 1-2 (2005): 1–7. http://dx.doi.org/10.1016/j.cossms.2006.03.002.

Full text

APA, Harvard, Vancouver, ISO, and other styles

40

Timm, Carsten. "Disorder effects in diluted magnetic semiconductors." Journal of Physics: Condensed Matter 15, no. 50 (2003): R1865—R1896. http://dx.doi.org/10.1088/0953-8984/15/50/r03.

Full text

APA, Harvard, Vancouver, ISO, and other styles

41

Rodriguez, S., and A. K. Ramdas. "Raman scattering by diluted magnetic semiconductors." Pure and Applied Chemistry 59, no. 10 (1987): 1269–84. http://dx.doi.org/10.1351/pac198759101269.

Full text

APA, Harvard, Vancouver, ISO, and other styles

42

Karpov, V. G., and E. I. Tsidil’kovskii. "Band tails in diluted magnetic semiconductors." Physical Review B 49, no. 7 (1994): 4539–48. http://dx.doi.org/10.1103/physrevb.49.4539.

Full text

APA, Harvard, Vancouver, ISO, and other styles

43

Dietl, T., G. Grabecki, and J. Jaroszynski. "Mesoscopic phenomena in diluted magnetic semiconductors." Semiconductor Science and Technology 8, no. 1S (1993): S141—S146. http://dx.doi.org/10.1088/0268-1242/8/1s/032.

Full text

APA, Harvard, Vancouver, ISO, and other styles

44

Blinowski, J., and P. Kacman. "Kinetic exchange in diluted magnetic semiconductors." Physical Review B 46, no. 19 (1992): 12298–304. http://dx.doi.org/10.1103/physrevb.46.12298.

Full text

APA, Harvard, Vancouver, ISO, and other styles

45

Kudrnovský, J., V. Drchal, G. Bouzerar, and R. Bouzerar. "Ordering effects in diluted magnetic semiconductors." Phase Transitions 80, no. 4-5 (2007): 333–50. http://dx.doi.org/10.1080/01411590701228265.

Full text

APA, Harvard, Vancouver, ISO, and other styles

46

Lewicki, A., J. Spałek, J. K. Furdyna, and R. R. Gała̧zka. "Superexchange in diluted magnetic (semimagnetic) semiconductors." Journal of Magnetism and Magnetic Materials 54-57 (February 1986): 1221–22. http://dx.doi.org/10.1016/0304-8853(86)90790-0.

Full text

APA, Harvard, Vancouver, ISO, and other styles

47

Bhattacharjee, A. K. "Orbital exchange in diluted magnetic semiconductors." Journal of Crystal Growth 138, no. 1-4 (1994): 895–99. http://dx.doi.org/10.1016/0022-0248(94)90927-x.

Full text

APA, Harvard, Vancouver, ISO, and other styles

48

CHOI, HEON-JIN, HAN-KYU SEONG, and UNGKIL KIM. "DILUTED MAGNETIC SEMICONDUCTOR NANOWIRES." Nano 03, no. 01 (2008): 1–19. http://dx.doi.org/10.1142/s1793292008000848.

Full text

Abstract:

An idea for simultaneously manipulating spin and charge in a single semiconductor medium has resulted in the development of diluted magnetic semiconductors (DMSs), which exhibits surprisingly room temperature ferromagnetic signatures despite having controversial ferromagnetic origin. However, achievement of truly room temperature ferromagnetism by carrier mediation is still the subject of intense research to develop the practical spin-based devices. Nanowires with one-dimensional nanostructure, which offers thermodynamically stable features and typically single crystalline and defect free, have a number of advantages over thin films with respect to studying ferromagnetism in DMSs. This review focuses primarily on our works on GaN -based DMS nanowires, i.e., Mn -doped GaN , Mn -doped AlGaN and Cu -doped GaN nanowires. These DMS nanowires have room temperature ferromagnetism by the local magnetic moment of doping elements that are in a divalent state and in tetrahedral coordination, thus substituting Ga in the wurtzite-type network structure of host materials. Importantly, our evidences indicate that the magnetism is originated from the ferromagnetic interaction driven by the carrier. These outcomes suggest that nanowires are ideal building blocks to address the magnetism in DMS due to their thermodynamic stability, single crystallinity, free of defects and free standing nature from substrate. Nanowires themselves are ideal building blocks for nanodevices and, thus, it would also be helpful in developing DMS-based spin devices.

APA, Harvard, Vancouver, ISO, and other styles

49

Yuan, Ye, Yufang Xie, Ning Yuan, et al. "The Al Doping Effect on Epitaxial (In,Mn)As Dilute Magnetic Semiconductors Prepared by Ion Implantation and Pulsed Laser Melting." Materials 14, no. 15 (2021): 4138. http://dx.doi.org/10.3390/ma14154138.

Full text

Abstract:

One of the most attractive characteristics of diluted ferromagnetic semiconductors is the possibility to modulate their electronic and ferromagnetic properties, coupled by itinerant holes through various means. A prominent example is the modification of Curie temperature and magnetic anisotropy by ion implantation and pulsed laser melting in III–V diluted magnetic semiconductors. In this study, to the best of our knowledge, we performed, for the first time, the co-doping of (In,Mn)As diluted magnetic semiconductors by Al by co-implantation subsequently combined with a pulsed laser annealing technique. Additionally, the structural and magnetic properties were systematically investigated by gradually raising the Al implantation fluence. Unexpectedly, under a well-preserved epitaxial structure, all samples presented weaken Curie temperature, magnetization, as well as uniaxial magnetic anisotropies when more aluminum was involved. Such a phenomenon is probably due to enhanced carrier localization introduced by Al or the suppression of substitutional Mn atoms.

APA, Harvard, Vancouver, ISO, and other styles

50

Hagston, W. E., T. Stirner, P. Harrison, O. F. Holbrook, and J. P. Goodwin. "Impurity-bound magnetic polarons in diluted magnetic semiconductors." Physical Review B 50, no. 8 (1994): 5264–71. http://dx.doi.org/10.1103/physrevb.50.5264.

Full text

APA, Harvard, Vancouver, ISO, and other styles

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!