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Journal articles on the topic 'Diluted magnetic semiconductors'

Author: Grafiati

Published: 4 June 2021

Last updated: 26 July 2025

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1

Chen, Sheng. "Theory And Application of Gallium Nitride Based Dilute Magnetic Semiconductors." Highlights in Science, Engineering and Technology 81 (January 26, 2024): 286–90. http://dx.doi.org/10.54097/26qm0041.

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Semiconductors are key components for the development of Industry 4.0 innovative technologies such as consumer electronics, data centers, intelligent new energy vehicles, and aerospace technology. Academic research on semiconductors can not only promote the development of electronics and electromagnetics, but also meet the demand for high-performance semiconductors in technological development. This paper provides a review of the theoretical and experimental research results on gallium nitride based diluted magnetic semiconductors, and prospects the future application prospects of gallium nitr

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2

Samarth, N., and J. K. Furdyna. "Diluted Magnetic Semiconductors." MRS Bulletin 13, no. 6 (1988): 32–36. http://dx.doi.org/10.1557/s0883769400065477.

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Diluted magnetic semiconductors (DMS) are semiconducting alloys whose lattice is partly made of substitutional magnetic ions. The most extensively studied materials of this type are the alloys, in which a fraction of the group II sublattice is replaced at random by Mn. The entire family of ternary alloys, along with their crystal structure and corresponding ranges of composition, is listed in Table I. Over the past decade, these alloys have attracted a growing scientific interest because of new fundamental effects in semiconductor physics and magnetism in these materials and because of their p

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3

Samarth, N., and J. K. Furdyna. "Diluted magnetic semiconductors." Proceedings of the IEEE 78, no. 6 (1990): 990–1003. http://dx.doi.org/10.1109/5.56911.

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4

Furdyna, J. K. "Diluted magnetic semiconductors." Journal of Applied Physics 64, no. 4 (1988): R29—R64. http://dx.doi.org/10.1063/1.341700.

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5

Fan, Yan. "Recent progress in diluted ferromagnetism for spintronic application." Journal of Physics: Conference Series 2608, no. 1 (2023): 012046. http://dx.doi.org/10.1088/1742-6596/2608/1/012046.

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Abstract With the continuous in-depth research of spintronics, the manufacture of high-performance magnetic random access memory devices and electronic devices that are more energy-efficient and generate less heat has received extensive attention. The traditional ferromagnet TbMnO3 is basically Tc at room temperature, which seriously limits its application. Since the discovery of diluted magnetic semiconductor materials at room temperature, such as AlNTiO2, ZnO, SnO2, etc., they have received increasing attention. Although these dopants can form ferromagnetism above-room temperature, the ferro

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6

Ved M. V., Dorokhin M. V., Lesnikov V. P., et al. "Circularly polarized electroluminescence at room temperature in heterostructures based on GaAs:Fe diluted magnetic semiconductor." Technical Physics Letters 48, no. 13 (2022): 76. http://dx.doi.org/10.21883/tpl.2022.13.53370.18836.

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In this work, we demonstrate the possibility of using a diluted magnetic semiconductor GaAs:Fe as a ferromagnetic injector in a spin light-emitting diode based on a GaAs/InGaAs quantum well heterostructure. It is shown that in such a device it is possible to observe partially circularly polarized electroluminescence at room temperature. Keywords: spin light-emitting diodes, diluted magnetic semiconductors, A3B5 semiconductors, spin injection.

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7

Jiao, Yu Zhang, Xin Chao Wang, Tao Zhang, Ke Fu Yao, Zheng Jun Zhang, and Na Chen. "Magnetic Semiconductors from Ferromagnetic Amorphous Alloys." Materials Science Forum 1107 (December 6, 2023): 111–16. http://dx.doi.org/10.4028/p-jim2w4.

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Utilizing both charge and spin degrees of freedom of electrons simultaneously in magnetic semiconductors promises new device concepts by creating an opportunity to realize data processing, transportation and storage in one single spintronic device. Unlike most of the traditional diluted magnetic semiconductors, which obtain intrinsic ferromagnetism by adding magnetic elements to non-magnetic semiconductors, we attempt to develop room temperature magnetic semiconductors via a metal-semiconductor transition by introducing oxygen into three different ferromagnetic amorphous alloy systems. These m

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8

Hass, K. C., B. E. Larson, H. Ehrenreich, and A. E. Carlsson. "Magnetic interactions in diluted magnetic semiconductors." Journal of Magnetism and Magnetic Materials 54-57 (February 1986): 1283–84. http://dx.doi.org/10.1016/0304-8853(86)90819-x.

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9

de Jonge, W. J. M., and H. J. M. Swagten. "Magnetic properties of diluted magnetic semiconductors." Journal of Magnetism and Magnetic Materials 100, no. 1-3 (1991): 322–45. http://dx.doi.org/10.1016/0304-8853(91)90827-w.

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10

Kacman, P. "Spin interactions in diluted magnetic semiconductors and magnetic semiconductor structures." Semiconductor Science and Technology 16, no. 4 (2001): R25—R39. http://dx.doi.org/10.1088/0268-1242/16/4/201.

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11

Ivanov, V. A. "Diluted magnetic semiconductors and spintronics." Bulletin of the Russian Academy of Sciences: Physics 71, no. 11 (2007): 1610–12. http://dx.doi.org/10.3103/s1062873807110433.

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12

Blinowski, J., P. Kacman, and J. A. Majewski. "Superexchange in Diluted Magnetic Semiconductors." Materials Science Forum 182-184 (February 1995): 779–82. http://dx.doi.org/10.4028/www.scientific.net/msf.182-184.779.

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13

Munekata, H., H. Ohno, S. von Molnar, Armin Segmüller, L. L. Chang, and L. Esaki. "Diluted magnetic III-V semiconductors." Physical Review Letters 63, no. 17 (1989): 1849–52. http://dx.doi.org/10.1103/physrevlett.63.1849.

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14

Bryksa, V. P. "Diluted magnetic A1-xMnxB semiconductors." Semiconductor Physics, Quantum Electronics and Optoelectronics 7, no. 2 (2004): 119–28. http://dx.doi.org/10.15407/spqeo7.02.119.

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15

Twardowski, A. "Diluted Magnetic III-V Semiconductors." Acta Physica Polonica A 98, no. 3 (2000): 203–16. http://dx.doi.org/10.12693/aphyspola.98.203.

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16

Bhattacharjee, A. K. "Chromium-based diluted magnetic semiconductors." Physical Review B 49, no. 19 (1994): 13987–90. http://dx.doi.org/10.1103/physrevb.49.13987.

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17

Tripathi, G. S., B. G. Mahanty, and S. N. Behera. "Photomaganetization in diluted magnetic semiconductors." Phase Transitions 78, no. 1-3 (2005): 229–37. http://dx.doi.org/10.1080/01411590412331316564.

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18

SAMARTH, N., and J. K. FURDYNA. "ChemInform Abstract: Diluted Magnetic Semiconductors." ChemInform 22, no. 15 (2010): no. http://dx.doi.org/10.1002/chin.199115305.

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19

KOSSUT, J., and W. DOBROWOLSKI. "ChemInform Abstract: Diluted Magnetic Semiconductors." ChemInform 27, no. 25 (2010): no. http://dx.doi.org/10.1002/chin.199625325.

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20

Samarth, N., and J. K. Furdyna. "Erratum to: Diluted Magnetic Semiconductors." MRS Bulletin 13, no. 8 (1988): 29. http://dx.doi.org/10.1557/bf03546436.

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21

Hagston, W. E., T. Stirner, and J. Miao. "Localized magnetic polarons in diluted magnetic semiconductors." Journal of Applied Physics 82, no. 11 (1997): 5653–57. http://dx.doi.org/10.1063/1.366426.

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22

Hagston, W. E., T. Stirner, J. P. Goodwin, and P. Harrison. "Magnetic-field effects in diluted magnetic semiconductors." Physical Review B 50, no. 8 (1994): 5255–63. http://dx.doi.org/10.1103/physrevb.50.5255.

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23

Mohanty, Sunita, and S. Ravi. "Magnetic properties of -based diluted magnetic semiconductors." Solid State Communications 150, no. 33-34 (2010): 1570–74. http://dx.doi.org/10.1016/j.ssc.2010.05.045.

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24

Archer, Thomas, Chaitanya Das Pemmaraju, and Stefano Sanvito. "Magnetic properties of ZrO2-diluted magnetic semiconductors." Journal of Magnetism and Magnetic Materials 316, no. 2 (2007): e188-e190. http://dx.doi.org/10.1016/j.jmmm.2007.02.085.

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25

Maksymowicz, L. J., M. Lubecka, R. Szymczak, W. Powroźnik, and H. Jankowski. "Magnetic parameters of diluted magnetic semiconductors CdCr2Se4." Journal of Magnetism and Magnetic Materials 242-245 (April 2002): 924–27. http://dx.doi.org/10.1016/s0304-8853(01)01321-x.

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26

Shapira, Y. "Diluted Magnetic Semiconductors in High Magnetic Fields." Acta Physica Polonica A 87, no. 1 (1995): 107–17. http://dx.doi.org/10.12693/aphyspola.87.107.

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27

MIURA, N., Y. H. MATSUDA, and T. IKAIDA. "MEGAGAUSS CYCLOTRON RESONANCE IN SEMICONDUCTOR NANOSTRUCTURES AND DILUTED MAGNETIC SEMICONDUCTORS." International Journal of Modern Physics B 16, no. 20n22 (2002): 3399–404. http://dx.doi.org/10.1142/s0217979202014565.

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We report the latest results of cyclotron resonance experiments on semiconductor nanostructures and diluted magnetic semiconductors (DMS) in very high magnetic fields up to 600 T produced by magnetic flux compression and the single turn coiled technique. Many new features were observed in the very high field range, such as characteristic behavior of low dimensional electrons, carrier dynamics or electron-electron interaction effects in quantum wells and quantum dot samples. In PbSe/PdEuTe quantum dots, which were regularly arranged to form an fcc superlattice, we observed an absorption peak wi

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28

Dietl. "FERROMAGNETIC TRANSITION IN DILUTED MAGNETIC SEMICONDUCTORS." Condensed Matter Physics 2, no. 3 (1999): 495. http://dx.doi.org/10.5488/cmp.2.3.495.

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29

Slobodskyy, Dugaev, and Vieira. "FERROMAGNETIC ORDERING IN DILUTED MAGNETIC SEMICONDUCTORS." Condensed Matter Physics 5, no. 3 (2002): 531. http://dx.doi.org/10.5488/cmp.5.3.531.

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30

Harrison, P., J. M. Fatah, T. Stirner, and W. E. Hagston. "Alloy nonrandomness in diluted magnetic semiconductors." Journal of Applied Physics 79, no. 3 (1996): 1684–88. http://dx.doi.org/10.1063/1.360954.

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31

Sato, K., P. H. Dederichs, H. Katayama-Yoshida, and J. Kudrnovský. "Exchange interactions in diluted magnetic semiconductors." Journal of Physics: Condensed Matter 16, no. 48 (2004): S5491—S5497. http://dx.doi.org/10.1088/0953-8984/16/48/003.

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32

Felici, A. C., F. Lama, M. Piacentini, et al. "Photoacoustic spectroscopy of diluted magnetic semiconductors." Journal of Applied Physics 80, no. 12 (1996): 6925–30. http://dx.doi.org/10.1063/1.363766.

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33

Furdyna, J. K. "Diluted magnetic semiconductors: Issues and opportunities." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 4, no. 4 (1986): 2002–9. http://dx.doi.org/10.1116/1.574016.

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34

Triki, M., and S. Jaziri. "Electron states in diluted magnetic semiconductors." Superlattices and Microstructures 38, no. 2 (2005): 122–29. http://dx.doi.org/10.1016/j.spmi.2005.04.002.

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35

Jaroszyński, J., and T. Dietl. "Mesoscopic phenomena in diluted magnetic semiconductors." Materials Science and Engineering: B 84, no. 1-2 (2001): 81–87. http://dx.doi.org/10.1016/s0921-5107(01)00574-8.

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36

Bouzerar, Richard, and Georges Bouzerar. "Unified picture for diluted magnetic semiconductors." EPL (Europhysics Letters) 92, no. 4 (2010): 47006. http://dx.doi.org/10.1209/0295-5075/92/47006.

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37

Larson, B. E., K. C. Hass, H. Ehrenreich, and A. E. Carlsson. "Exchange mechanisms in diluted magnetic semiconductors." Solid State Communications 56, no. 4 (1985): 347–50. http://dx.doi.org/10.1016/0038-1098(85)90399-0.

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38

Furdyna, J. K. "Shallow centers in diluted magnetic semiconductors." Solid State Communications 53, no. 12 (1985): 1097–101. http://dx.doi.org/10.1016/0038-1098(85)90886-5.

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39

Seshadri, Ram. "Zinc oxide-based diluted magnetic semiconductors." Current Opinion in Solid State and Materials Science 9, no. 1-2 (2005): 1–7. http://dx.doi.org/10.1016/j.cossms.2006.03.002.

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40

Timm, Carsten. "Disorder effects in diluted magnetic semiconductors." Journal of Physics: Condensed Matter 15, no. 50 (2003): R1865—R1896. http://dx.doi.org/10.1088/0953-8984/15/50/r03.

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41

Rodriguez, S., and A. K. Ramdas. "Raman scattering by diluted magnetic semiconductors." Pure and Applied Chemistry 59, no. 10 (1987): 1269–84. http://dx.doi.org/10.1351/pac198759101269.

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42

Karpov, V. G., and E. I. Tsidil’kovskii. "Band tails in diluted magnetic semiconductors." Physical Review B 49, no. 7 (1994): 4539–48. http://dx.doi.org/10.1103/physrevb.49.4539.

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43

Dietl, T., G. Grabecki, and J. Jaroszynski. "Mesoscopic phenomena in diluted magnetic semiconductors." Semiconductor Science and Technology 8, no. 1S (1993): S141—S146. http://dx.doi.org/10.1088/0268-1242/8/1s/032.

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44

Blinowski, J., and P. Kacman. "Kinetic exchange in diluted magnetic semiconductors." Physical Review B 46, no. 19 (1992): 12298–304. http://dx.doi.org/10.1103/physrevb.46.12298.

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45

Kudrnovský, J., V. Drchal, G. Bouzerar, and R. Bouzerar. "Ordering effects in diluted magnetic semiconductors." Phase Transitions 80, no. 4-5 (2007): 333–50. http://dx.doi.org/10.1080/01411590701228265.

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46

Lewicki, A., J. Spałek, J. K. Furdyna, and R. R. Gała̧zka. "Superexchange in diluted magnetic (semimagnetic) semiconductors." Journal of Magnetism and Magnetic Materials 54-57 (February 1986): 1221–22. http://dx.doi.org/10.1016/0304-8853(86)90790-0.

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47

Bhattacharjee, A. K. "Orbital exchange in diluted magnetic semiconductors." Journal of Crystal Growth 138, no. 1-4 (1994): 895–99. http://dx.doi.org/10.1016/0022-0248(94)90927-x.

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48

CHOI, HEON-JIN, HAN-KYU SEONG, and UNGKIL KIM. "DILUTED MAGNETIC SEMICONDUCTOR NANOWIRES." Nano 03, no. 01 (2008): 1–19. http://dx.doi.org/10.1142/s1793292008000848.

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An idea for simultaneously manipulating spin and charge in a single semiconductor medium has resulted in the development of diluted magnetic semiconductors (DMSs), which exhibits surprisingly room temperature ferromagnetic signatures despite having controversial ferromagnetic origin. However, achievement of truly room temperature ferromagnetism by carrier mediation is still the subject of intense research to develop the practical spin-based devices. Nanowires with one-dimensional nanostructure, which offers thermodynamically stable features and typically single crystalline and defect free, hav

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49

Yuan, Ye, Yufang Xie, Ning Yuan, et al. "The Al Doping Effect on Epitaxial (In,Mn)As Dilute Magnetic Semiconductors Prepared by Ion Implantation and Pulsed Laser Melting." Materials 14, no. 15 (2021): 4138. http://dx.doi.org/10.3390/ma14154138.

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One of the most attractive characteristics of diluted ferromagnetic semiconductors is the possibility to modulate their electronic and ferromagnetic properties, coupled by itinerant holes through various means. A prominent example is the modification of Curie temperature and magnetic anisotropy by ion implantation and pulsed laser melting in III–V diluted magnetic semiconductors. In this study, to the best of our knowledge, we performed, for the first time, the co-doping of (In,Mn)As diluted magnetic semiconductors by Al by co-implantation subsequently combined with a pulsed laser annealing te

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50

Hagston, W. E., T. Stirner, P. Harrison, O. F. Holbrook, and J. P. Goodwin. "Impurity-bound magnetic polarons in diluted magnetic semiconductors." Physical Review B 50, no. 8 (1994): 5264–71. http://dx.doi.org/10.1103/physrevb.50.5264.

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