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Journal articles on the topic 'Diode en silicium'

Author: Grafiati

Published: 24 May 2025

Last updated: 31 July 2025

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1

Il’yaschenko, D. P., Dmitry A. Chinakhov, and Y. M. Gotovschik. "Investigating the Influence of the Power Supply Type upon the Properties of the Weld Joints under Manual Arc Welding." Advanced Materials Research 1040 (September 2014): 837–44. http://dx.doi.org/10.4028/www.scientific.net/amr.1040.837.

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The given work considers the influence of the power supply type (diode rectifier DR-306 and inverter Nebula-315) upon the chemical composition, microstructure, mechanical properties of weld joints and upon health characteristics of the manual arc welding process.It has been ascertained that the power supply type has a significant influence upon the weld joints properties and health characteristics of the manual arc welding process. Using a new generation inverter power supply allows less heat input into the weld bead, thus, decreasing silicium and manganese burning, improving impact resistance

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2

Notton, Gilles, Ionut Caluianu, Iolanda Colda, and Sorin Caluianu. "Influence d’un ombrage partiel sur la production électrique d’un module photovoltaïque en silicium monocristallin." Journal of Renewable Energies 13, no. 1 (2023): 49–62. http://dx.doi.org/10.54966/jreen.v13i1.177.

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Le développement du marché photovoltaïque nécessite de connaître parfaitement la production électrique de ces systèmes sur différents sites en particulier pour estimer sa rentabilité économique. Cette estimation précise ne peut se faire qu’en prenant en compte les effets d’ombrage qui ont des conséquences dramatiques sur la puissance électrique délivrée. Dans cet article, nous avons testé un modèle double-diode de courbes I-V sur un module photovoltaïque au silicium monocristallin (BP585F) sous des conditions normales d’éclairement; puis après une brève explication du comportement électrique d

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3

Lu, W., K. L. Pey, N. Singh, et al. "Effect of Nickel Silicide Induced Dopant Segregation on Vertical Silicon Nanowire Diode Performance." MRS Proceedings 1439 (2012): 89–94. http://dx.doi.org/10.1557/opl.2012.845.

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ABSTRACTIn this work, Dopant Segregated Schottky Barrier (DSSB) and Schottky Barrier (SB) vertical silicon nanowire (VSiNW) diodes were fabricated on p-type Si substrate using CMOS-compatible processes to investigate the effects of segregated dopants at the silicide/silicon interface and different annealing processes on nickel silicide formation in DSSB VSiNW diodes. With segregated dopants at the silicide/silicon interface, VSiNW diodes showed higher on-current, due to an enhanced carrier tunneling, and much lower leakage current. This can be attributed to the altered energy bands caused by t

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4

Abdesselem, S., A. Ouhab, and M. S. Aida. "Influence de la température de substrat sur la croissance et les propriétés des films minces de silicium amorphe déposés par pulvérisation cathodique." Canadian Journal of Physics 81, no. 11 (2003): 1293–302. http://dx.doi.org/10.1139/p03-101.

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We deposit thin films of a-Si:H by RF diode spray on substrate with temperatures varying from 200 to 500 °C. Knowing that this deposition method is violent when compared with the plasma-assisted deposition method, we have used low RF power to limit the energy of the Ar ions bombarding the surface of the growing film. Characterization of the films by UVvisible absorption spectroscopy suggests that the influence of the substrate temperature can be classified into three different regimes: (i) low temperature, Ts < 300 °C: the films show a strong disorder, the hydrogen is bound only in the pol

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5

Miakonkikh, Andrey, Alexander Rogozhin, Petr Solyankin, and Konstantin Rudenko. "Experimental study silicon low-dimensional structures for generation of THz radiation." ITM Web of Conferences 30 (2019): 08012. http://dx.doi.org/10.1051/itmconf/20193008012.

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Capabilities of precision technologies for manufacturing on SOI wafers of silicon low-dimensional structures for terahertz generation are investigated. The design of diode device based on array of silicon nanowires or on ultrathin (<10 nm) silicon layer are proposed. This generating silicon diode includes nano-sized elements with ballistic transport of carriers, which is coupled to a metal antenna made from silicide layer.

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6

Diawara, Yacouba, John F. Currie, S. Iraj Najafi, and John L. Brebner. "Détecteur photovoltaïque au silicium amorphe." Canadian Journal of Physics 68, no. 3 (1990): 317–20. http://dx.doi.org/10.1139/p90-050.

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We present here the results obtained for a hydrogenated amorphous silicon photovoltaic detector fabricated by plasma-enhanced chemical vapor deposition and integrated on a glass planar waveguide. Capacitance measurements of (Al, Cr) – a-Si:H – n+a-Si:H – Al multilayer Schottky diodes were used to model the devices and to deduce the properties of a-Si:H layer. A response time of 30 ns full width at half maximum in unbiased operation was obtained when tested using short (4 ns) guided light pulses; the response time value was obtained without external polarization, thus making the device autonomo

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7

Musaeva, S. N., E. A. Kerimov, N. F. Kazımov, and S. I. Huseynova. "Platinum Silicide-Silicon Schottky Diode Characteristics." Modern Electronic Technology 2, no. 2 (2018): 41. http://dx.doi.org/10.26549/met.v2i2.850.

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Abstrat: Photoelectric measurements are used to obtain additional information on the transportation mechanism of Schottky barrier structures.The main purpose of the study is to investigate the photoelectric properties of Shottky diodes based on PtSi - n - Si and PtSi - p - Si contacts.

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8

Kim, Kihyun, Yehwan Kang, Seungbok Yun, et al. "Reduced On-Resistance and Improved 4H-SiC Junction Barrier Schottky Diodes Performance by Laser Annealing on C-Face Ohmic Regions in Thin Structures." Coatings 12, no. 6 (2022): 777. http://dx.doi.org/10.3390/coatings12060777.

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In this study, we investigated the characteristics of the n-type Ni/SiC ohmic contact using the laser annealing process on thin wafers. The electrical behavior of the ohmic contacts was tested in 4H-SiC JBS diode devices. As a result, a wafer thickness of 100 μm in the 4H-SiC JBS diode achieved a forward voltage of 1.33 V at 20 A with a laser annealing process using Ni silicide. Using a laser annealing process on a wafer thickness of 100 μm, an on-resistance decrease of almost 22% was demonstrated. Based on our experimental results, we suggest an alternative laser annealing fabrication scheme

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9

Kikuchi, Akira. "Nickel Silicide Formation and Related Schottky Barrier Diode Characteristics." Journal of The Electrochemical Society 136, no. 4 (1989): 1162–65. http://dx.doi.org/10.1149/1.2096827.

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10

Vassilevski, Konstantin, Irina P. Nikitina, Praneet Bhatnagar, et al. "High Temperature Operation of Silicon Carbide Schottky Diodes with Recoverable Avalanche Breakdown." Materials Science Forum 527-529 (October 2006): 931–34. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.931.

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4H-SiC diodes with nickel silicide (Ni2Si) and molybdenum (Mo) Schottky contacts have been fabricated and characterised at temperature up to 400°C. Room temperature boron implantation has been used to form a single zone junction termination extension. Both Ni2Si and Mo diodes revealed unchanging ideality factors and barrier heights (1.45 and 1.3 eV, respectively) at temperatures up to 400°C. Soft recoverable breakdowns were observed both in Ni2Si and Mo Schottky diodes at voltages above 1450 V and 3400 V depending on the epitaxial structure used. These values are about 76% and 94% of the ideal

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11

Spurny, F., R. Medioni, L. Plawinski, and Q. Chau. "Dosimétrie passive des neutrons rapides au moyen des diodes de silicium." Radioprotection 35, no. 1 (2000): 21–29. http://dx.doi.org/10.1051/radiopro:2000102.

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12

Vassilevski, Konstantin, Irina P. Nikitina, Alton B. Horsfall, Nicolas G. Wright, and C. Mark Johnson. "4.6 kV, 10.5 mOhm×cm² Nickel Silicide Schottky Diodes on Commercial 4H-SiC Epitaxial Wafers." Materials Science Forum 645-648 (April 2010): 897–900. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.897.

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4H-SiC diodes with 0.60 mm2 nickel silicide Schottky contacts were fabricated on commercial epitaxial layers. At room temperature, the diodes have specific on-resistances (RON-SP) down to 10.5 mΩcm2 and blocking voltages (VBL) up to 4.6 kV, which is equal to 93 % of the calculated parallel plane breakdown voltage for used epitaxial structure. The corresponding figure-of-merit, defined as (VBL)2/RON-SP, is equal to 2015 MW/cm2 and is among the highest FOM values reported to date. The diodes demonstrated stable operation at forward current of 1 A and VBL value in excess of 3.3 kV at ambient tem

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13

Unewisse, M. H., and J. W. V. Storey. "Conduction mechanisms in erbium silicide Schottky diodes." Journal of Applied Physics 73, no. 8 (1993): 3873–79. http://dx.doi.org/10.1063/1.352899.

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14

Thornton, J., R. E. Harper, and D. M. Albury. "Helium microprobe analysis of nickel silicide diodes." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 29, no. 3 (1987): 515–20. http://dx.doi.org/10.1016/0168-583x(87)90062-0.

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15

Lu, Weijie, Kin Leong Pey, Xinpeng Wang, et al. "Vertical Silicon Nanowire Diode with Nickel Silicide Induced Dopant Segregation." Japanese Journal of Applied Physics 51 (November 20, 2012): 11PE08. http://dx.doi.org/10.1143/jjap.51.11pe08.

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16

Lu, Weijie, Kin Leong Pey, Xinpeng Wang, et al. "Vertical Silicon Nanowire Diode with Nickel Silicide Induced Dopant Segregation." Japanese Journal of Applied Physics 51, no. 11S (2012): 11PE08. http://dx.doi.org/10.7567/jjap.51.11pe08.

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17

Debéda, H., A. Gracia, M. Dematos, et al. "Procédé de fabrication d’un circuit redresseur de puissance : de la fabrication de diodes Silicium à leur assemblage sur substrat métallisé d’alumine." J3eA 21 (2022): 1016. http://dx.doi.org/10.1051/j3ea/20221016.

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Les deux pôles CNFM (Coordination Nationale pour la Formation en Microélectronique et en nanotechnologies) de Toulouse et Bordeaux, AIME et PCB respectivement, ont associé leurs compétences pour créer des formations sur la thématique de l’électronique de puissance : procédé de fabrication de composants pour l’AIME, et leur assemblage sur un substrat céramique pour le PCB. Le circuit choisi, un redresseur de puissance (Pont de Graetz) a permis de valider le procédé de fabrication des diodes de puissance nouvellement mis au point à l’AIME. L’intérêt de cette collaboration inter-pôle est double (

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18

Kikuchi, Akira. "Barrier Height of Titanium Silicide Schottky Barrier Diodes." Japanese Journal of Applied Physics 25, Part 2, No. 11 (1986): L894—L895. http://dx.doi.org/10.1143/jjap.25.l894.

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19

Drobny, V. F. "Nearly ideal unguarded vanadium-silicide Schottky-barrier diodes." IEEE Transactions on Electron Devices 33, no. 9 (1986): 1294–98. http://dx.doi.org/10.1109/t-ed.1986.22661.

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20

Tap, H., R. P. Tan, O. Bernal, et al. "Du silicium au circuit CMOS. Pédagogie active par Apprentissage Par Projet." J3eA 23 (2024): 1019. http://dx.doi.org/10.1051/j3ea/20241019.

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L’objectif de cette formation est de proposer à des étudiants de niveau Master ou Ingénieur en Electronique un module complet allant de la modélisation d’une technologie CMOS 6 µm jusqu’au test d’un circuit analogique fabriqué en salle blanche, après une étape de conception et de simulation. En s’appuyant sur les méthodes d’Apprentissage Par Projet (APP) et de pédagogies actives, cette formation favorise l’apprentissage des outils et des méthodes de conception des circuits CMOS autour de la conception et de la réalisation concrète d’un amplificateur CMOS à 2 étages répondant à un cahier des ch

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21

Min, Jin-Gi, Dong-Hee Lee, Yeong-Ung Kim, and Won-Ju Cho. "Implementation of Ambipolar Polysilicon Thin-Film Transistors with Nickel Silicide Schottky Junctions by Low-Thermal-Budget Microwave Annealing." Nanomaterials 12, no. 4 (2022): 628. http://dx.doi.org/10.3390/nano12040628.

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In this study, the efficient fabrication of nickel silicide (NiSix) Schottky barrier thin-film transistors (SB-TFTs) via microwave annealing (MWA) technology is proposed, and complementary metal-oxide-semiconductor (CMOS) inverters are implemented in a simplified process using ambipolar transistor properties. To validate the efficacy of the NiSix formation process by MWA, NiSix is also prepared via the conventional rapid thermal annealing (RTA) process. The Rs of the MWA NiSix decreases with increasing microwave power, and becomes saturated at 600 W, thus showing lower resistance than the 500

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22

Wzorek, Marek, Marek Ekielski, Krzysztof Piskorski, et al. "Schottky Barrier Formation Mechanism and Thermal Stability in Au-Free Cu/Metal–Silicide Contacts to GaN-Cap/AlGaN/AlN-Spacer/GaN-on-Si Heterostructure." Electronics 13, no. 17 (2024): 3429. http://dx.doi.org/10.3390/electronics13173429.

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In this study, metal–silicide-based contacts to GaN-cap/AlGaN/AlN-spacer/GaN-on-Si heterostructure were investigated. Planar Schottky diodes with Cu-covered anodes comprising silicide layers of various metal–silicon (M–Si) compositions were fabricated and characterized in terms of their electrical parameters and thermal stability. The investigated contacts included Ti–Si, Ta–Si, Co–Si, Ni–Si, Pd–Si, Ir–Si, and Pt–Si layers. Reference diodes with pure Cu or Au/Ni anodes were also examined. To test the thermal stability, selected devices were subjected to subsequent annealing steps in vacuum at

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23

Omura, Yasuhisa, Hiroshi Inokawa, and Katsutoshi Izumi. "Titanium silicide and titanium nitride formation by titanium-ion implantation for MOS LSI applications." Journal of Materials Research 6, no. 6 (1991): 1238–47. http://dx.doi.org/10.1557/jmr.1991.1238.

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A 70-nm-thick, 19-μΩ · cm TiSi2 layer is formed using a Ti-ion implantation technique. TiN/TiSi2 double layers, whose surface morphology is superior to that obtained with conventional deposition and reaction techniques, can also be simultaneously formed by Ti-ion implantation into monocrystalline Si screened with the Si3N4 film. Discrete pn-junction diodes with a shallow TiSi2 layer and Ti-polycide-gate MOS capacitors are fabricated to determine the influences of Ti-ion implantation on electrical characteristics. The leakage current of the B-doped p+n junction and As/P-doped n+p junction with

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24

Jin, S., H. Bender, R. A. Donaton, and K. Maex. "Microstructural studies by transmission electron microscopy of the formation of ultrathin PtSi layers with novel silicidation processes." Journal of Materials Research 14, no. 6 (1999): 2577–87. http://dx.doi.org/10.1557/jmr.1999.0345.

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Ultrathin and uniform Pt-silicide layers are prepared by electron beam evaporation on a heated silicon substrate and by magnetron sputtering at room temperature followed by rapid thermal annealing (RTP) and selective etching, respectively. In the electron-beam deposited samples, continuous Pt-silicide layers of 6–8 nm thickness are formed after thermal annealing. The interfaces between the silicide layers and the silicon substrate are not atomically flat. In the case of the sputtered Pt, continuous PtSi layers down to 3 nm thick can be produced by using two-step (low-high temperature) and modi

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25

Badalà, Paolo, Corrado Bongiorno, Patrick Fiorenza, et al. "Electrical and Structural Properties of Ohmic Contacts of SiC Diodes Fabricated on Thin Wafers." Solid State Phenomena 359 (August 22, 2024): 97–103. http://dx.doi.org/10.4028/p-wyuvu3.

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New generations of SiC power devices require to be fabricated on very thin substrates, in order to significantly reduce the series resistance of the device. The role of thinning process on the formation of backside ohmic contact has been investigated in this work. Three different mechanical grinding processes have been adopted, resulting in different amounts of defectivity and surface roughness values. An excimer UV laser has been used to form a Ni-silicide based ohmic contact on the backside of the wafers. The reacted layer has been studied by means of Atomic Force Microscopy (AFM), Transmiss

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26

Badalà, Paolo, Ioannis Deretzis, Salvatore Sanzaro, et al. "Ni-Silicide Ohmic Contacts on 4H-SiC Formed by Multi Pulse Excimer Laser Annealing." Solid State Phenomena 344 (June 6, 2023): 15–22. http://dx.doi.org/10.4028/p-z365f5.

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The formation of ohmic contacts by laser annealing approach is of great importance for SiC power devices, since it allows their fabrication on thin substrates, that is of crucial significance to reduce power dissipation. Ni silicide reaction under UV laser irradiation has been studied in detail with particular focus on single pulse approach, in order to describe the early stage of reaction process. The use of a multi pulse approach, for the formation of Ni silicide-based ohmic contacts by means of excimer laser annealing, has been investigated in this work. The reaction process has been charac

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27

Papatzika, S., N. A. Hastas, C. T. Angelis, C. A. Dimitriadis, G. Kamarinos, and J. I. Lee. "Investigation of noise sources in platinum silicide Schottky barrier diodes." Applied Physics Letters 80, no. 8 (2002): 1468–70. http://dx.doi.org/10.1063/1.1454208.

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28

Chand, S., and J. Kumar. "Electron transport and barrier inhomogeneities in palladium silicide Schottky diodes." Applied Physics A: Materials Science & Processing 65, no. 4-5 (1997): 497–503. http://dx.doi.org/10.1007/s003390050614.

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29

Pierre, G., A. Valentin та L. Henry. "Étude par transformée de Fourier, du spectre, du silane dans la région de 1000 cm−1. Analyse de la diade ν2 et ν4". Canadian Journal of Physics 64, № 3 (1986): 341–50. http://dx.doi.org/10.1139/p86-060.

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A Fourier-transform absorption spectrum of the three silicium isotopes of silane in natural abundance have been recorded from 840 to 1040 cm−1. The line width is 3 × 10−3 cm−1 and the absolute accuracy is estimated to be about 2 × 10−4 cm−1 for non-saturated and non-overlapped lines. The analysis of this spectrum is achieved, using a Hamiltonian, formulated with an irreducible tensorial set in the Td group.For the dyad ν2 and ν4 and for each isotopic species, 30 reduced effective Hamiltonian parameters are determined, giving the line wave numbers with 2.5 × 10−4 cm−1 for 28SiH4, 3.4 × 10−4 cm−

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30

Kim, Dae Hwan, Jong Ho Lee, Jeong Hyun Moon, et al. "Improvement of the Reverse Characteristics of Ti/4H-SiC Schottky Barrier Diodes by Thermal Treatments." Solid State Phenomena 124-126 (June 2007): 105–8. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.105.

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Ti/4H-SiC Schottky barrier diodes were fabricated under 500, 750, 1000 °C thermal treatment conditions. After the heat treatment at 750 °C, formation of TiC(111) and Ti5Si3(210) phases was confirmed by XRD analysis. Formation of Ti carbide and silicide phase increased breakdown voltage VB from 545 V to 830 V. An improvement of breakdown voltage (VB) was observed in case of the thermal treatment in nitrogen ambient at 750 °C for 2 min. Ideality factor (n), specific on resistance (Ron), and Schottky barrier height (Φb) were 1.04, 2.7 m-cm2, 1.33 eV respectively.

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31

Cherkaoui, Karim, Russell Duane, Peter Ward, and Alan Blake. "Fabrication and Characterisation of Silicide/3C-SiC/Si Contacts for Schottky Barrier Diode Application." ECS Meeting Abstracts MA2020-01, no. 23 (2020): 1334. http://dx.doi.org/10.1149/ma2020-01231334mtgabs.

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32

Kumar, Sandeep, Joseph T. Boyd та Howard E. Jackson. "Optical response at 10.6 μm in tungsten silicide Schottky barrier diodes". Journal of Applied Physics 62, № 9 (1987): 3848–52. http://dx.doi.org/10.1063/1.339227.

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33

Yuryev, V. A., K. V. Chizh, V. A. Chapnin, et al. "Pt silicide/poly-Si Schottky diodes as temperature sensors for bolometers." Journal of Applied Physics 117, no. 20 (2015): 204502. http://dx.doi.org/10.1063/1.4921595.

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34

Kim, Joondong, Junsin Yi, and Wayne A. Anderson. "Metal silicide-templated growth of quality Si films for Schottky-diodes." Thin Solid Films 518, no. 22 (2010): 6510–13. http://dx.doi.org/10.1016/j.tsf.2010.01.049.

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35

Schvan, P., and R. E. Thomas. "Continuous-wave laser-induced diffusion in silicon." Canadian Journal of Physics 63, no. 6 (1985): 886–89. http://dx.doi.org/10.1139/p85-144.

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A novel processing technique to form shallow p-n junctions using a continuous-wave (cw) laser beam scanned over a large area is described. The results of computer simulation of the heat-flow problem were used to find the optimum condition for cw laser-induced liquid-phase diffusion. High-speed scanning of the laser beam and the application of phosphosilica glass as a diffusion source, which also acts as an antireflective coat, are essential parts of the process. The optimum incident laser power was around 7.5 W with a scanning speed of 100 cm/s. This process produced junction depths of around

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36

SELLAI, A., and P. DAWSON. "BARRIER HEIGHT VARIATIONS AND INTERFACE PROPERTIES OF PtSi/Si STRUCTURES." Surface Review and Letters 13, no. 02n03 (2006): 273–78. http://dx.doi.org/10.1142/s0218625x06008244.

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To study some of the interfacial properties of PtSi/Si diodes, Schottky structures were fabricated on (100) crystalline silicon substrates by conventional thermal evaporation of Pt on Si followed by annealing at different temperatures (from 400°C to 700°C) to form PtSi . The PtSi/n-Si diodes, all yielded Schottky barrier (SB) heights that are remarkably temperature dependent. The temperature range (20–290 K) over which the I–V characteristics were measured in the present study is broader with a much lower limit (20 K), than what is usually reported in literature. These variations in the barrie

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37

Jiménez-Leube, J., M. Clement, A. Almendra, J. Sanz-Maudes, and T. Rodríguez. "Comparison between furnace and rapid thermal annealed iridium silicide Schottky barrier diodes." Materials Science and Technology 11, no. 11 (1995): 1215–18. http://dx.doi.org/10.1179/mst.1995.11.11.1215.

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38

Furio, C., G. Charitat, A. Lhoite, and J. M. Dilhac. "Barrier Lowering Effects for Metal-Silicide Schottky Diodes at High Reverse Bias." EPE Journal 7, no. 3-4 (1998): 7–11. http://dx.doi.org/10.1080/09398368.1997.11463412.

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39

Péransin, J. M., P. Balco, R. Alabedra, T. Ducourant, and B. Orsal. "Étude des sources de bruit BF dans les diodes de commutation PIN à base de silicium amorphe hydrogéné." European Physical Journal Applied Physics 1, no. 3 (1998): 369–75. http://dx.doi.org/10.1051/epjap:1998101.

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40

Zhang, Zhen, Joanna Atkin, Marinus Hopstaken, et al. "Probing the Interface Barriers of Dopant-Segregated Silicide–Si Diodes With Internal Photoemission." IEEE Transactions on Electron Devices 59, no. 8 (2012): 2027–32. http://dx.doi.org/10.1109/ted.2012.2197399.

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41

McNutt, M. J. "Edge leakage control in platinum-silicide Schottky-barrier diodes used for infrared detection." IEEE Electron Device Letters 9, no. 8 (1988): 394–96. http://dx.doi.org/10.1109/55.755.

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42

Dimitriadis, C. A. "Effect of conventional and rapid thermal annealing on platinum silicide Schottky barrier diodes." Applied Physics Letters 56, no. 2 (1990): 143–45. http://dx.doi.org/10.1063/1.103055.

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43

Moy, D., S. Basavaiah, C. T. Chuang, et al. "Effects of processing conditions on the characteristics of platinum silicide Schottky barrier diodes." Solid-State Electronics 31, no. 5 (1988): 843–49. http://dx.doi.org/10.1016/0038-1101(88)90037-8.

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44

Cabanski, W., and M. Schulz. "Tunneling current-voltage characteristics of Ti-silicide/p? Si/p+ Si Schottky diodes." Applied Physics A Solids and Surfaces 48, no. 3 (1989): 203–10. http://dx.doi.org/10.1007/bf00619386.

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45

Pascu, Razvan, Gheorghe Pristavu, Gheorghe Brezeanu, et al. "Electrical Characterization of Ni-Silicide Schottky Contacts on SiC for High Performance Temperature Sensor." Materials Science Forum 821-823 (June 2015): 436–39. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.436.

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The electrical behavior and stability of a temperature sensor based on 4H-SiC Schottky diodes using Ni2Si as Schottky contact, are investigated. The ideality factor and the barrier height were found to be strongly dependent on the post-annealing temperature of the Ni contact (which lead to the formation of Ni2Si). A nearly ideal Schottky device, with the barrier height approaching the high value of1.7eV, and a slight temperature dependence, was obtained after an annealing atTA=800°C.This high barrier height proves that Ni2Si is suitable as Schottky contact for temperature sensors, able to reli

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Tamura, Y., R. Yoshihara, K. Kakushima, et al. "Physical and electrical properties of ultra-thin nickel silicide Schottky diodes on Si (100)." Journal of Physics: Conference Series 417 (March 1, 2013): 012015. http://dx.doi.org/10.1088/1742-6596/417/1/012015.

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Roca, E., K. Kyllesbech Larsen, S. Kolodinski, and R. Mertens. "Increase in the infrared response of silicide Schottky barrier diodes by grain boundary scattering." Applied Physics Letters 67, no. 10 (1995): 1372–74. http://dx.doi.org/10.1063/1.115537.

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Roca, E., K. Kyllesbech Larsen, S. Kolodinski, and R. Mertens. "Influence of grain boundary scattering in the infrared response of silicide Schottky barrier diodes." Journal of Applied Physics 79, no. 8 (1996): 4426. http://dx.doi.org/10.1063/1.361751.

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Dentel, D., L. Kubler, J. L. Bischoff, et al. "Molecular beam epitaxial growth of strained layers on graded for Pt silicide Schottky diodes." Semiconductor Science and Technology 13, no. 2 (1998): 214–19. http://dx.doi.org/10.1088/0268-1242/13/2/010.

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Drobny, V. F. "The effect of Ti:W barrier metal on characteristics of palladium-silicide Schottky barrier diodes." Journal of Electronic Materials 14, no. 3 (1985): 283–96. http://dx.doi.org/10.1007/bf02661223.

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