Relevant bibliographies by topics / Diode reverse recovery time

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers

Academic literature on the topic 'Diode reverse recovery time'

Author: Grafiati
Published: 4 June 2021
Last updated: 9 February 2022

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Journal articles on the topic "Diode reverse recovery time"

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Sun, Wei, and Da Ke Yang. "Automatic Measurement and Modeling Implementation of Diode Reverse Recovery." Applied Mechanics and Materials 385-386 (August 2013): 1300–1304. http://dx.doi.org/10.4028/www.scientific.net/amm.385-386.1300.

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Diode reverse recovery current dissipation is the most important source of power dissipation for diodes used in fast switching converters or other power devices applications. As the reverse recovery current can peak at very high currents, this may cause the failures of other devices in the circuit. Therefore the Diode Reverse Recovery phenomena should no longer be ignored in device model and circuit simulations employing diodes. Automatic measurement of Diode Reverse Recovery time is becoming essential for mass production industrial process monitoring and device modeling. In this paper, a nove
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KAZIMIERCZUK, MARIAN K. "REVERSE RECOVERY OF POWER pn JUNCTION DIODES." Journal of Circuits, Systems and Computers 05, no. 04 (1995): 589–606. http://dx.doi.org/10.1142/s0218126695000369.

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A quasi-steady state approximation is used to derive expressions for the waveforms of minority carrier charge stored in p+nn+ power junction diodes driven by large-signal sinusoidal and ramp voltages. These waveforms are derived by solving a diode charge-control differential equation. Using the charge waveforms, the storage time is determined and the diode current and voltage waveforms are predicted. It is shown that three frequency ranges can be distinguished: (1) low-frequency range in which the reverse recovery is negligible, (2) mid-frequency range in which the reverse recovery is detrimen
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Asano, Katsunori, Atsushi Tanaka, Shuuji Ogata, Koji Nakayama, and Yoichi Miyanagi. "Transient Electrical Characteristics of Electron Irradiated High Blocking Voltage 4H-SiC Pin Diode." Materials Science Forum 717-720 (May 2012): 965–68. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.965.

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The transient electrical characteristics of the forward recovery and reverse recovery characteristics of lifetime-controlled high blocking voltage 4H-SiC pin diodes by electron irradiation are investigated. Even at a heavy electron dose of 1×1014 cm-2, the forward voltage overshoot of a 4H-SiC pin diode is lower than that of a 2 kV/100 A class Si fast diode. As for the reverse recovery characteristics, small reverse recovery current and fast reverse recovery time are obtained by electron irradiation. The reduction ratio of recovery loss can therefore exceed the increase ratio of steady-state l
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Ivanov, Pavel A., Oleg Kon'kov, Tatyana Samsonova, Alexander Potapov, and Igor Grekhov. "Electrical Performance of 4H-SiC Based Drift Step Recovery Diodes." Materials Science Forum 858 (May 2016): 761–64. http://dx.doi.org/10.4028/www.scientific.net/msf.858.761.

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Mesa-epitaxial 4H-SiC p+-p-no-n+-diodes were fabricated from commercial epitaxial wafers. Reverse recovery characteristics of the diodes were measured in pulse regimes to be relevant to operation of drift step recovery diodes (DSRDs) [1]. When injecting the minority carriers by forward current pulse followed by applying a reverse voltage pulse, the diodes are able to break the reverse current in a subnanosecond time (DSRD-mode). Different regimes of diode operation in DSRD-mode are investigated such as variable reverse voltage amplitude, forward current amplitude and duration, time delay betwe
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Korolkov, Oleg, Natalja Sleptsuk, Paul Annus, Raul Land, and Toomas Rang. "High Voltage Diffusion-Welded Stacks on the Basis of SiC Schottky Diodes." Materials Science Forum 858 (May 2016): 790–94. http://dx.doi.org/10.4028/www.scientific.net/msf.858.790.

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In the present work we have considered the prototype of the high-voltage diode stack made on the basis of commercial SiC Schottky diodes. Implementation of vertical integration for four diode chips yielded stack with the reverse current of 25 μA under reverse voltage of 6 kV. The capacitance of the stack at zero bias is reduced more than three times in comparison with initial diodes. Reverse recovery time of the stack was 8.0 ns. This paper proposes a convenient analytical approach to the estimation of parameters of modular compositions with vertical architecture.
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Zhou, Shi Yuan, Kai Zhang, Dinguo Xiao, Chun Guang Xu, and Bo Yang. "Application of Silicon Carbide Diode in Ultrasound High Voltage Pulse Protection Circuit." Applied Mechanics and Materials 290 (February 2013): 115–19. http://dx.doi.org/10.4028/www.scientific.net/amm.290.115.

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SiC diode (Silicon Carbide Diode) is a newly commercial available Schottky barrier diode with zero reverse-recovery-time, which is a perfect candidate for fabricating high voltage pulse protection circuit in ultrasonic transceiver system. With SiC diode’s high performance, the circuit can deliver 400 volts or higher voltage protection level, which is not an easy job for other kind of diodes. In this article, the theory of diode-bridge protection circuit is briefly discussed, and a SiC diode-bridge protection circuit was fabricated, and some experiments has been done to verify the feasibility o
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Strollo, A. G. M. "Calculation of power diode reverse-recovery time for SPICE simulations." Electronics Letters 30, no. 14 (1994): 1109–10. http://dx.doi.org/10.1049/el:19940770.

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Yang and Choi. "Power Efficiency Improvement of Three-Phase Split-Output Inverter Using Magnetically Coupled Inductor Switching." Electronics 8, no. 9 (2019): 969. http://dx.doi.org/10.3390/electronics8090969.

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The conventional three-phase split-output inverter (SOI) has been used for grid-connected applications because it does not require dead time and has no shoot-through problems. Recently, the conventional inverter uses the silicon carbide (SiC) schottky diodes for the freewheeling diodes because of its no reverse-recovery problem. Nevertheless, in a practical design, the SiC schottky diodes suffer from current overshoots and voltage oscillations. These overshoots and oscillations result in switching-power losses, decreasing the power efficiency of the inverter. To alleviate this drawback, we pre
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Nakayama, Koji, Shuji Ogata, Toshihiko Hayashi, et al. "High Voltage and Fast Switching Reverse Recovery Characteristics of 4H-SiC PiN Diode." Materials Science Forum 778-780 (February 2014): 841–44. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.841.

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The reverse recovery characteristics of a 4H-SiC PiN diode under higher voltage and faster switching are investigated. In a high-voltage 4H-SiC PiN diode, owing to an increased thickness, the drift region does not become fully depleted at a relatively low voltage Furthermore, an electron–hole recombination must be taken into account when the carrier lifetime is equal to or shorter than the reverse recovery time. High voltage and fast switching are therefore needed for accurate analysis of the reverse recovery characteristics. The current reduction rate increases up to 2 kA/μs because of low st
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Nakayama, Koji, Atsushi Tanaka, Katsunori Asano, Tetsuya Miyazawa, Masahiko Ito, and Hidekazu Tsuchida. "Electrical Characteristics of 4H-SiC Pin Diode with Carbon Implantation or Thermal Oxidation." Materials Science Forum 717-720 (May 2012): 989–92. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.989.

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The forward voltage drops of pin diodes with the carbon implantation process or thermal oxidation process using a drift layer of 120 μm thick are around 4.0 V and are lower than those with the standard process. The reverse recovery characteristics of diodes with the standard process or carbon implantation at room temperature show almost the same tendency. In the reverse recovery characteristics at 250 oC, pin diodes with carbon implantation process, however, have the longer reverse recovery time than those with the standard process. These characteristics indicate that a recombination path othe
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Dissertations / Theses on the topic "Diode reverse recovery time"

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Šuľan, Dušan. "Zpětné zotavení ve výkonových integrovaných obvodech." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2016. http://www.nusl.cz/ntk/nusl-242128.

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Předkládaná práce se zabývá parametrem “Reverse Recovery Time“ u polovodičových prvků a jeho vlivem na typické spínací obvody. V první části práce je objasněno co je “Reverse Recovery Time“ a jeho jednotlivé části. V další sekci je popsána jeho fyzikální podstata. Na konci teoretická části je rozebrán jeho efekt na spínací ztráty a doporučená metoda měření tohto parametru . Praktická část práce je zaměřena na simulace Dpdr45nres45 v prostředích Cadence a TCAD. Poslední část se zabývá návrhem obvodu na měření u reálných diod a samotným měřením diod a tranzistorů.
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Ryšavý, Lukáš. "Univerzální přesné usměrňovače s proudovými aktivními prvky." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2013. http://www.nusl.cz/ntk/nusl-220210.

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In this thesis new circuit solutions of universal precision rectifiers with current active elements are proposed. Based on the knowledge of current active elements, universal precision rectifiers and adverse impacts on these circuits new circuit solutions are proposed. These circuits are then simulated and compared with the known circuits of precision rectifiers. In concusion two original circuits and two proposed circuit solutions based on original ones are implemented, their properties are experimentally measured and their function are verified. The main active element in the original circui
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Deschaine, Wesley. "MODELING AND OPTIMIZATION OF BODY DIODE REVERSE RECOVERY CHARACTERISTICS OF LDMOS TRANSISTORS." Master's thesis, University of Central Florida, 2006. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/3686.

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As switching speeds for DC-DC converter applications keep becoming faster and faster and voltage requirements become smaller and smaller, the need for new device structures becomes more prevalent. Designers of these new structures will need to make sure they take into consideration the different power losses associated with the different structures and make modifications to reduce or if possible eliminate them. A new 30V LDMOS device has been created and is being implemented into a synchronous buck converter for future DC-DC conversions. This new lateral device has a Figure of Merit of 80m&Ugr
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Landowshi, Matthew M. "Modeling and analysis of reverse recovery in PiN power diodes in series." Honors in the Major Thesis, University of Central Florida, 2008. http://digital.library.ucf.edu/cdm/ref/collection/ETH/id/1101.

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This item is only available in print in the UCF Libraries. If this is your Honors Thesis, you can help us make it available online for use by researchers around the world by following the instructions on the distribution consent form at http://library.ucf.edu/Systems/DigitalInitiatives/DigitalCollections/InternetDistributionConsentAgreementForm.pdf You may also contact the project coordinator, Kerri Bottorff, at kerri.bottorff@ucf.edu for more information.<br>Bachelors<br>Engineering and Computer Science<br>Electrical Engineering
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Felsl, Hans Peter. "Silizium- und SiC-Leistungsdioden unter besonderer Berücksichtigung von elektrisch-thermischen Kopplungseffekten und nichtlinearer Dynamik." Doctoral thesis, Universitätsbibliothek Chemnitz, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-200902077.

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Diese Arbeit befasst sich mit Hochleistungsdioden aus den Halbleitermaterialen Silizium und Siliziumkarbid. Analysiert werden die statischen und dynamischen Schalteigenschaften. Bei den SiC-Bauelementen handelt es sich um unipolare Schottky-Dioden und bei den Silizium-Dioden um bipolare pin-Dioden. Bei den SiC-Schottky-Dioden liegt der Schwerpunkt auf der Analyse des statischen Durchbruchverhaltens von Randstrukturen und auf der Untersuchung der Selbsterwärmung bei Einzel- und Mehrpulsbelastung. Bei den bipolaren Silizium-Dioden wird das Durchbruchverhalten bei niedrigen und hohen Stromdichte
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Baburske, Roman. "Dynamik des Ladungsträgerplasmas während des Ausschaltens bipolarer Leistungsdioden." Doctoral thesis, Universitätsbibliothek Chemnitz, 2011. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-74615.

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Diese Arbeit beschäftigt sich mit dem besonders kritischen Ausschaltvorgang bipolarer Leistungsdioden, bei dem das im Durchlass vorhandene Ladungsträgerplasma abgebaut wird. Schwerpunkt ist dabei die Untersuchung von zwei ungewollten Phänomenen, die während des Ausschaltens auftreten können. Diese sind ein plötzliches Abreißen des Rückstroms während der Kommutierung und eine Zerstörung der Diode mit einem lokalen Aufschmelzen in der aktiven Fläche. Betrachtet wird dazu der Ladungsträgerberg, der sich während des Schaltvorgangs bildet. Durch die Analyse des Verhaltens der Ladungsträgerbergfront
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Baburske, Roman. "Dynamik des Ladungsträgerplasmas während des Ausschaltens bipolarer Leistungsdioden." Doctoral thesis, Universitätsverlag der Technischen Universität Chemnitz, 2010. https://monarch.qucosa.de/id/qucosa%3A19578.

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Diese Arbeit beschäftigt sich mit dem besonders kritischen Ausschaltvorgang bipolarer Leistungsdioden, bei dem das im Durchlass vorhandene Ladungsträgerplasma abgebaut wird. Schwerpunkt ist dabei die Untersuchung von zwei ungewollten Phänomenen, die während des Ausschaltens auftreten können. Diese sind ein plötzliches Abreißen des Rückstroms während der Kommutierung und eine Zerstörung der Diode mit einem lokalen Aufschmelzen in der aktiven Fläche. Betrachtet wird dazu der Ladungsträgerberg, der sich während des Schaltvorgangs bildet. Durch die Analyse des Verhaltens der Ladungsträgerbergfront
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Ke, Tsung-Yu, and 柯宗佑. "A 600V AlGaN/GaN Schottky Barrier Diode(SBD)on Si Substrate with Fast Reverse Recovery Time." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/57545138488455527148.

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碩士<br>國立中央大學<br>電機工程研究所<br>99<br>Lateral AlGaN/GaN Schottky Barrier Diodes (SBDs) on Si substrate have been fabricated and characterized. AlGaN/GaN hetero-junction layers were grown on 4-inch p-type Si (111) substrate with 2 ?m buffer layer. The measurement of etching pit density (EPD) of GaN films on Si substrate is about 1.92×109 cm-2 by atomic force microscopy (AFM). The full width at half maximum value (FWHM) of x-ray diffraction rocking curve for the GaN film on Si (111) substrate is 536 arc-sec (002 reflection), which is related to the screw type dislocation and resulted leakage current.
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Anwar, Mohammed Sadique, and Mohammed Sadique Anwar. "Investigation of Body Diode Reverse Recovery Characteristics in Lateral power MOSFETs." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/18217895382070975189.

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碩士<br>亞洲大學<br>資訊工程學系碩士班<br>101<br>In the coming age where combustion engines vehicles and the ever increasing environmental pollution that are a consequence of combustion, alternatives are being researched and developed. An alternative to the combustion engine vehicle is an electric vehicle. However, development of more efficient motor controllers has been harmped by the lack of information regarding effect of reverse recovery associated with using Power MOSFETs are used as switches in a three-phase rectifier configuration to drive the motors. During the reverse recovery period, high currents
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WU, CHIA-HSIN, and 吳家昕. "High-Speed Reverse Recovery Time Measurement System with Automatic Double Pulse Control." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/8vt95r.

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碩士<br>臺北城市科技大學<br>資訊應用產業碩士專班<br>106<br>The reverse recovery time is the time that the pn junction diode switches from the forward bias state to the reverse bias state and the minority carrier recovers to the original region. It is widely used in high-speed electronic switching circuits and also the very important consideration. The objective of this study is to design a high-speed reverse recovery time measurement system with automatic double pulse control, which increases the maximum forward current 100 Amperes and the working frequency 120 Hz. In this thesis, the rapid change of the voltage
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Books on the topic "Diode reverse recovery time"

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William, Blair, Brent Richard, and Grant Tom, eds. Banks and Financial Crime. Oxford University Press, 2017. http://dx.doi.org/10.1093/law/9780198716587.001.0001.

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Financial crime is an important and topical area. Concerns over money laundering have grown considerably since links with terrorist organisations have become more apparent in recent years. This revised and updated new edition provides a guide for banks to their regulatory responsibilities, their private law duties, their liabilities to third parties and their obligations to assist persons seeking the recovery of assets (including regulatory bodies within and without the jurisdiction). It also sets the relevant law in its national and international policy context and assesses the current state
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Book chapters on the topic "Diode reverse recovery time"

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Chaudron, Gerald. "Burst Pipes and Leaky Roofs." In Advances in Business Information Systems and Analytics. IGI Global, 2018. http://dx.doi.org/10.4018/978-1-5225-4754-9.ch012.

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Libraries can face different kinds of emergency but planning for every contingency is an immense challenge. Overwhelmed with books and articles that focus mainly on the catastrophic events, librarians tend to place more emphasis on managing the risk of hurricanes and floods leaving then underprepared for the more mundane and common emergencies like burst pipes and leaky roofs. This chapter uses two case studies of small water emergencies to examine how each library managed those emergencies and what lessons were learned. They show that while both incidents were water-related, they were very different in terms of source, size, impact, recovery time, and frequency. Libraries should be planning for small disasters first, and then scaling up preparation to account for the larger events, rather than the reverse. More libraries may do such planning if they are preparing for a probable scenario rather than one that is only a possibility.
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Chaudron, Gerald. "Burst Pipes and Leaky Roofs." In Emergency and Disaster Management. IGI Global, 2019. http://dx.doi.org/10.4018/978-1-5225-6195-8.ch055.

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Libraries can face different kinds of emergency but planning for every contingency is an immense challenge. Overwhelmed with books and articles that focus mainly on the catastrophic events, librarians tend to place more emphasis on managing the risk of hurricanes and floods leaving then underprepared for the more mundane and common emergencies like burst pipes and leaky roofs. This chapter uses two case studies of small water emergencies to examine how each library managed those emergencies and what lessons were learned. They show that while both incidents were water-related, they were very different in terms of source, size, impact, recovery time, and frequency. Libraries should be planning for small disasters first, and then scaling up preparation to account for the larger events, rather than the reverse. More libraries may do such planning if they are preparing for a probable scenario rather than one that is only a possibility.
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Kappa, Stavroula, and Simos Malamis. "Integration of Forward Osmosis in Municipal Wastewater Treatment Applications." In Osmotically Driven Membrane Processes [Working Title]. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.95867.

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In recent years, the research community has made constant efforts to develop new technologies for the recovery and valorization of water, nutrient and energy content of municipal wastewater. However, the recovery process is significantly limited due to the low-strength of sewage. Over the last 10 years, the Forward Osmosis (FO) process, has gained interest as a low-cost process with low membrane fouling propensity, which can convert municipal wastewater into a concentrated low-volume effluent, characterized by high organic and nutrient concentration. This chapter presents the main configurations that have been implemented for the concentration of municipal wastewater using FO, including their performance in terms of contaminant removal and water/reverse salt flux (Jw/Js). Furthermore, the draw solutions and respective concentrations that have been used in FO for the treatment of sewage are reported, while at the same time the positive and negative characteristics of each application are evaluated. Finally, in the last section of this chapter, the spontaneous FO followed by anaerobic process is integrated in a municipal wastewater treatment plant (WWTP) and compared with a conventional one. The comparison is done, in terms of the mass balance of the chemical oxygen demand (COD) and in terms of the energy efficiency.
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Chaudron, Gerald. "After the Flood." In Advances in Library and Information Science. IGI Global, 2016. http://dx.doi.org/10.4018/978-1-4666-8624-3.ch017.

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This chapter uses two case studies of small disasters caused by water to examine the impact of such small-scale events on the libraries concerned, how those libraries managed the emergencies, and what lessons were learned which will inform their planning for future incidents. The case studies show that while both incidents are water-related, they are quite different in terms of source, size, impact, recovery time, and frequency. Many books and articles on disaster planning focus on the larger disasters, such as hurricanes and floods, which may be the reason the much more common smaller emergencies do not get the attention they deserve. Libraries should be planning for the small disasters first, and then scaling up their preparation to account for the larger, less frequent events, rather than the reverse. More libraries may be persuaded to do such planning if they are preparing for a probable scenario rather than one which may only be a possibility.
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Conference papers on the topic "Diode reverse recovery time"

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Hao Wang, Jinjun Liu, Runxin Wang, and Qinsan Hou. "Modeling diode reverse recovery and corresponding implementation in fast time-domain simulation." In 2007 7th Internatonal Conference on Power Electronics (ICPE). IEEE, 2007. http://dx.doi.org/10.1109/icpe.2007.4692510.

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Itthikusumarn, W., W. Jakphet, and W. Titiroongruang. "Reverse recovery time reworking of fast recovery diodes for industrial production." In 2015 International Symposium on Next-Generation Electronics (ISNE). IEEE, 2015. http://dx.doi.org/10.1109/isne.2015.7132020.

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Hao Wang, Jinjun Liu, Runxin Wang, and Qian Fang. "An Improved Method of Parameter Abstraction for a Novel Diode Reverse Recovery Model in Time-Domain Simulation." In 2008 Twenty-Third Annual IEEE Applied Power Electronics Conference and Exposition (APEC '08). IEEE, 2008. http://dx.doi.org/10.1109/apec.2008.4522949.

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VEHER, OLEKSANDR, NATALJA SLEPTSUK, JANA TOOMPUU, OLEG KOROLKOV, and TOOMAS RANG. "THE DEPENDENCE OF REVERSE RECOVERY TIME ON BARRIER CAPACITANCE AND SERIES-ON RESISTANCE IN SCHOTTKY DIODES." In MATERIALS CHARACTERISATION 2017. WIT Press, 2017. http://dx.doi.org/10.2495/mc170021.

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Razavian, Sam, and Aydin Babakhani. "A THz Pulse Radiator Based on PIN Diode Reverse Recovery." In 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS). IEEE, 2019. http://dx.doi.org/10.1109/bcicts45179.2019.8972736.

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Wang, Zhaohui, Jiajia Ouyang, Junming Zhang, Xinke Wu, and Kuang Sheng. "Analysis on reverse recovery characteristic of SiC MOSFET intrinsic diode." In 2014 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE, 2014. http://dx.doi.org/10.1109/ecce.2014.6953782.

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Matsui, R., D. Suzuki, Y. Tanimoto, et al. "Modeling of reverse recovery effect for embedded diode in SJ MOSFET." In 2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC). IEEE, 2015. http://dx.doi.org/10.1109/edssc.2015.7285129.

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Pulvirenti, Mario, Angelo G. Sciacca, Luciano Salvo, Massimo Nania, Giacomo Scelba, and Giuseppe Scarcella. "Body Diode Reverse Recovery Effects on SiC MOSFET Half-Bridge Converters." In 2020 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE, 2020. http://dx.doi.org/10.1109/ecce44975.2020.9236330.

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Krihely, Natan, and Sam Ben-Yaakov. "Modeling and evaluation of diode reverse recovery in discrete-transition simulators." In 2010 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE, 2010. http://dx.doi.org/10.1109/ecce.2010.5618421.

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Peng Zhang, Xuhui Wen, Yulin Zhong, and Jun Liu. "A simulation research on the reverse recovery characteristics of PIN diode." In 2011 International Conference on Electric Information and Control Engineering (ICEICE). IEEE, 2011. http://dx.doi.org/10.1109/iceice.2011.5777366.

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