Relevant bibliographies by topics / Diodes

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Diodes'

Author: Grafiati
Published: 4 June 2021
Last updated: 25 July 2025

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Journal articles on the topic "Diodes"

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Zhou, Shi Yuan, Kai Zhang, Dinguo Xiao, Chun Guang Xu, and Bo Yang. "Application of Silicon Carbide Diode in Ultrasound High Voltage Pulse Protection Circuit." Applied Mechanics and Materials 290 (February 2013): 115–19. http://dx.doi.org/10.4028/www.scientific.net/amm.290.115.

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SiC diode (Silicon Carbide Diode) is a newly commercial available Schottky barrier diode with zero reverse-recovery-time, which is a perfect candidate for fabricating high voltage pulse protection circuit in ultrasonic transceiver system. With SiC diode’s high performance, the circuit can deliver 400 volts or higher voltage protection level, which is not an easy job for other kind of diodes. In this article, the theory of diode-bridge protection circuit is briefly discussed, and a SiC diode-bridge protection circuit was fabricated, and some experiments has been done to verify the feasibility o
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Sužiedėlis, Algirdas, Steponas Ašmontas, Jonas Gradauskas, et al. "Anisotropy of Voltage Sensitivity of Bow-Tie Microwave Diodes Containing 2DEG Layer." Crystals 15, no. 4 (2025): 367. https://doi.org/10.3390/cryst15040367.

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Microwave Bow-Tie Diodes operate across a broad frequency range, including THz radiation detection and THz imaging applications. When fabricated using modulation-doped structures, these diodes exhibit enhanced detection properties that are best characterized by voltage sensitivity. The sensitivity is influenced by multiple factors, including diode design, semiconductor material quality, and the characteristics of the ohmic contacts. In this study, we examine how the electrical properties of modulation-doped bow-tie diodes are affected by their orientation relative to the crystallographic axes.
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Afanasyev, Alexey V., Boris V. Ivanov, Vladimir A. Ilyin, Alexey F. Kardo-Sysoev, Maria A. Kuznetsova, and Victor V. Luchinin. "Superfast Drift Step Recovery Diodes (DSRDs) and Vacuum Field Emission Diodes Based on 4H-SiC." Materials Science Forum 740-742 (January 2013): 1010–13. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.1010.

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This paper presents the results of research and development of two types diode structures based on wide bandgap 4H-SiC: drift step recovery diodes (DSRDs) and field emission diodes (FED). Diodes’ structure and manufacturing methods are reviewed. Diode’s characteristics were obtained (static current-voltage characteristics and capacitor-voltage characteristic, switching properties’ characteristics for DSRDs). Field emission 4H-SiC structures illustrated high (≥102 А/сm2) current densities at electric field intensity of approximately 10V/um. 4H-SiC DSRDs in the generator structure with a single
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Salman, RK. "Research note: Light emitting diodes as solar power resources." Lighting Research & Technology 51, no. 3 (2018): 476–83. http://dx.doi.org/10.1177/1477153518764211.

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This paper investigates the possibility of recycling light emitting diodes from damaged electronic devices, and using them in a similar way to photovoltaic cells in order to reduce environmental pollution. The study used a number of tests with a variety of different parameters for measuring the capability for light emitting diodes to harvest the sun’s rays and to convert them into a useful form of electrical power. The different configurations involved variations of light emitting diode wavelength and number, as well as the connection types between the light emitting diodes (series and paralle
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Bumai, Yurii, Aleh Vaskou, and Valerii Kononenko. "Measurement and Analysis of Thermal Parameters and Efficiency of Laser Heterostructures and Light-Emitting Diodes." Metrology and Measurement Systems 17, no. 1 (2010): 39–45. http://dx.doi.org/10.2478/v10178-010-0004-x.

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Measurement and Analysis of Thermal Parameters and Efficiency of Laser Heterostructures and Light-Emitting DiodesA thermal resistance characterization of semiconductor quantum-well heterolasers in the AlGaInAs-AlGaAs system (λst≈ 0.8 μm), GaSb-based laser diodes (λst≈ 2 μm), and power GaN light-emitting diodes (visible spectral region) was performed. The characterization consists in investigations of transient electrical processes in the diode sources under heating by direct current. The time dependence of the heating temperature of the active region of a source ΔT(t), calculated from direct b
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Min, Seong-Ji, Michael A. Schweitz, Ngoc Thi Nguyen, and Sang-Mo Koo. "Comparison of Temperature Sensing Performance of 4H-SiC Schottky Barrier Diodes, Junction Barrier Schottky Diodes, and PiN Diodes." Journal of Nanoscience and Nanotechnology 21, no. 3 (2021): 2001–4. http://dx.doi.org/10.1166/jnn.2021.18934.

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We present a comparison between the thermal sensing behaviors of 4H-SiC Schottky barrier diodes, junction barrier Schottky diodes, and PiN diodes in a temperature range from 293 K to 573 K. The thermal sensitivity of the devices was calculated from the slope of the forward voltage versus temperature plot. At a forward current of 10 μA, the PiN diode presented the highest sensitivity peak (4.11 mV K−1), compared to the peaks of the junction barrier Schottky diode and the Schottky barrier diode (2.1 mV K−1 and 1.9 mV K−1, respectively). The minimum temperature errors of the PiN and junction barr
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Weikle, Robert M., S. Nadri, C. M. Moore, et al. "Thermal Characterization of Quasi-Vertical GaAs Schottky Diodes Integrated on Silicon Using Thermoreflectance and Electrical Transient Measurements." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2019, DPC (2019): 001293–310. http://dx.doi.org/10.4071/2380-4491-2019-dpc-presentation_tha3_009.

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Thermal management and design have been understood, for many years, as critical factors in the implementation of submillimeter-wave Schottky-diode-based circuits and instruments. Removal of heat is particularly important for frequency multipliers, as these circuits generally exhibit low-to-modest conversion efficiencies, and are usually driven with high-power sources to achieve usable output power in the submillimeter-wave region of the spectrum. Elevated diode junction temperature due to inadequate heat sinking is known to degrade performance, accelerate aging effects (for example, due to ele
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Bayer, Christoph Friedrich, Eberhard Bär, Birgit Kallinger, and Patrick Berwian. "Thermal Simulation of Paralleled SiC PiN Diodes in a Module Designed for 6.5 kV/1 kA." Materials Science Forum 821-823 (June 2015): 616–19. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.616.

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This work shows thermal simulations of a package of 48/96 high-voltage (6.5 kV/1 kA) PiN diodes. A temperature dependent heat generation for a forward voltage of 3.6 V with a realistic heat generating volume in the diode of (2.7x2.7x0.01) mm3 was used. The thermal coupling of two diodes was determined to be less than 1 % for a distance between the diodes of 10 mm. The temperature distribution for the entire module has been studied for two different ceramic insulating materials, AlN and Al2O3, as well as for two numbers of diodes, 48 and 96. This led to a maximum temperature of 106 °C/118 °C (A
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Son, Minoh, and Changkun Park. "Cell-Based ESD Diodes with a Zigzag-Shaped Layout to Enhance the ESD Survival Level." Journal of Circuits, Systems and Computers 26, no. 02 (2016): 1750023. http://dx.doi.org/10.1142/s0218126617500232.

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In this study, we propose cell-based diodes which are laid out with a zigzag shape as electrostatic discharge (ESD) protection elements to enhance the ESD survival level of the diodes. Generally, diodes are regarded as simple ESD protection devices in integrated circuits. During ESD events, the P–N junction of the ESD diode acts as a thermal source. In this study, we investigate a distributed layout method which relies on a cell-based ESD diode to prevent an excessive increase in the temperature at the P–N junction. However, although the distributed layout enhances the ESD survival levels of t
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Kasture, Anil, Kailash Karande, and Shankar Nawale. "Performance Analysis of Various Nonlinear Elements in Frequency Multiplying Circuits for Wireless Applications." International Journal of Electrical and Electronics Research 12, no. 4 (2024): 1332–36. https://doi.org/10.37391/ijeer.120425.

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This paper presents the performance comparison of various nonlinear elements in frequency multiplying circuits for low power wireless applications. An analysis and design are derived. Passive frequency multipliers take advantage of the nonlinear behavior of passive circuit components. Passive frequency multipliers take advantage of the nonlinearity of passive circuit components. In this category, Schottky diodes and varactor diodes are used for frequency multiplication. We analyzed passive devices like resistive diodes (Schottky-barrier diodes) and nonlinear capacitors (varactors). The perform
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Dissertations / Theses on the topic "Diodes"

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Mohib, Abdul. "Molecular diodes." Thesis, Cranfield University, 2006. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.439279.

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ECKLE, MICHEL. "Diodes organiques electroluminescentes." Université Louis Pasteur (Strasbourg) (1971-2008), 2001. http://www.theses.fr/2001STR13008.

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Le developpement de l'electroluminescence de couches minces composees de matieres organiques debute dans les annees 80 avec les travaux de tang et van slyke. Plus tard la technique d'auto-assemblage couche par couche permet l'incorporation de polymeres conducteurs dans les films minces. Le poly(p-phenylene vinylene) (ppv) est le polymere electroluminescent le plus utilise dans les etudes portant sur les diodes organiques polymeriques. Son incorporation dans l'architecture du film se fait via son precurseur cationique non conjugue et soluble qui est converti in-situ en la forme finale du polyme
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Belhadj-Yahya, Chedly. "Evaluation of the quantum well tunneling diode and the quantum electron-wave interference diode as high speed devices." Diss., Georgia Institute of Technology, 1992. http://hdl.handle.net/1853/15348.

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Lochner, Zachary Meyer. "Green light emitting diodes and laser diodes grown by metalorganic chemical vapor deposition." Thesis, Georgia Institute of Technology, 2010. http://hdl.handle.net/1853/33827.

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This thesis describes the development of III-Nitride materials for light emitting applications. The goals of this research were to create and optimize a green light emitting diode (LED) and laser diode (LD). Metalorganic chemical vapor deposition (MOCVD) was the technique used to grow the epitaxial structures for these devices. The active regions of III-Nitride based LEDs are composed of InₓGa₁₋ₓN, the bandgap of which can be tuned to attain the desired wavelength depending on the percent composition of Indium. An issue with this design is that the optimal growth temperature of InGaN is lower
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Stevenson, Stuart G. "Dendrimer light-emitting diodes." Thesis, St Andrews, 2008. http://hdl.handle.net/10023/581.

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Dussaigne, Amélie. "Diodes électroluminescentes blanches monolithiques." Phd thesis, Université de Nice Sophia-Antipolis, 2005. http://tel.archives-ouvertes.fr/tel-00332387.

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Ce travail concerne la croissance par épitaxie sous jets moléculaires avec NH3 comme source d'azote de diodes électroluminescentes (DELs) blanches monolithiques. La méthode proposée au laboratoire consiste à insérer dans la zone active de la DEL des puits quantiques (Ga,In)N émettant dans le bleu et le jaune. Bien que la concentration en In de l'alliage InxGa1-xN soit limitée à 20-25%, la présence d'un champ électrique interne dans les hétérostructures nitrures permet d'obtenir des longueurs d'onde balayant tout le spectre visible. Malheureusement, ce champ électrique diminue aussi la force d'
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Brezeanu, Mihai. "Diamond Schottky barrier diodes." Thesis, University of Cambridge, 2008. https://www.repository.cam.ac.uk/handle/1810/226757.

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Research on wide band gap semiconductors suitable for power electronicdevices has spread rapidly in the last decade. The remarkable results exhibited bysilicon carbide (SiC) Schottky batTier diodes (SBDs), commercially available since2001, showed the potential of wide band gap semiconductors for replacing silicon (Si)in the range of medium to high voltage applications, where high frequency operationis required. With superior physical and electrical properties, diamond became apotential competitor to SiC soon after Element Six reported in 2002 the successfulsynthesis of single crystal plasma de
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Lau, Fat Kit. "Tapered waveguide laser diodes." Thesis, University of Cambridge, 2009. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.611648.

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Snaith, Henry James. "Polymer based photovoltaic diodes." Thesis, University of Cambridge, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.614761.

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Choi, Wai Kit. "Organic light-emitting diodes." HKBU Institutional Repository, 1999. http://repository.hkbu.edu.hk/etd_ra/190.

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Books on the topic "Diodes"

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Semiconductors, ITT. Diodes, zener diodes, rectifiers. ITT Semiconductors, 1991.

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Semiconductors, ITT. Diodes, zener diodes, rectifiers. ITT Semiconductors, 1987.

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Rectifier, International. Schottky diodes. International Rectifier, 1992.

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(Firm), Knovel, ed. Understanding modern transistors and diodes. Cambridge University Press, 2010.

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(Firm), Harris Semiconductor. MCT/IGBTs/diodes. Harris Semiconductor, 1994.

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Li, Jinmin, and G. Q. Zhang, eds. Light-Emitting Diodes. Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-99211-2.

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Electronic, Telefunken. Diodes data book. Telefunken Electronic, 1988.

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Schubert, E. Fred. Light-Emitting Diodes. 2nd ed. Cambridge University Press, 2006.

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Semiconductors, Philips. Diodes: Data handbook. Philips Semiconductors, 1992.

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Jens, Buus, ed. Tunable laser diodes. Artech House, 1998.

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Book chapters on the topic "Diodes"

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Warnes, Lionel. "Diodes." In Electronic and Electrical Engineering. Macmillan Education UK, 1998. http://dx.doi.org/10.1007/978-1-349-15052-6_7.

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Warnes, Lionel. "Diodes." In Electronic and Electrical Engineering. Macmillan Education UK, 2003. http://dx.doi.org/10.1007/978-0-230-21633-4_7.

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Suits, Bryan H. "Diodes." In Electronics for Physicists. Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-39088-4_6.

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Barnes, John R. "Diodes." In Robust Electronic Design Reference Book. Springer US, 2004. http://dx.doi.org/10.1007/1-4020-7830-7_16.

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Grundmann, Marius. "Diodes." In Graduate Texts in Physics. Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-13884-3_20.

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Warnes, Lionel. "Diodes." In Analogue and Digital Electronics. Macmillan Education UK, 1998. http://dx.doi.org/10.1007/978-1-349-14037-4_2.

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Robinson, Kevin. "Diodes." In Practical Audio Electronics. Focal Press, 2020. http://dx.doi.org/10.4324/9780429343056-16.

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Atallah, Jad G., and Mohammed Ismail. "Diodes." In Integrated Electronic Circuits. Springer International Publishing, 2024. http://dx.doi.org/10.1007/978-3-031-62707-1_3.

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Suits, Bryan H. "Diodes." In Electronics for Physicists. Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-36364-1_6.

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Warnes, L. A. A. "Diodes." In Electronic and Electrical Engineering. Macmillan Education UK, 1994. http://dx.doi.org/10.1007/978-1-349-13012-2_7.

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Conference papers on the topic "Diodes"

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Aharoni, A., J. W. Goodman, and Y. Amitai. "An efficient holographic collimator for 820 nm laser diodes." In OSA Annual Meeting. Optica Publishing Group, 1992. http://dx.doi.org/10.1364/oam.1992.mcc1.

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High-quality collimation and focusing of laser diode beams is hindered by their asymmetric divergence and elliptical beam section. These result from the large aspect ratio of the source. In gain-guided diode lasers the beam also suffers astigmatism due to the lensing effects of the nonuniform current porofile. A holographic correcting and collimating element for such diodes is desirable for its low mass-production cost and small dimensions. Efficient holograms cannot, however, be recorded directly with the infrared wavelengths of diode lasers, and normally large aberrations and low efficiencie
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Wu, Wei, Andy G. Lozowski, and Fengxia Wang. "Improved Rectifier Circuit With Backward Diodes for Low Power Source Harvesting." In ASME 2014 Dynamic Systems and Control Conference. American Society of Mechanical Engineers, 2014. http://dx.doi.org/10.1115/dscc2014-6018.

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Most energy harvesting circuits use a Schottky diode rectifier as the first stage in the power conversion system. Schottky diodes are chosen for their low forward-voltage drop which can be as low as 0.15V. Further improvements toward enabling lower voltage sources may be accomplished by using active rectifiers with MOSFET transistors. However such circuits still require an initial start-up phase in which the source voltage needs to exceed the Schottky barrier voltage. As an alternative we propose using backward diodes to build a rectifier with much smaller barrier voltage compared to the Schot
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Kim, Jungho, Matthew Whitten, Richard W. Quine, and T. S. Kalkur. "Technique for Measuring Surface Temperature Fluctuations on a Silicon Wafer During Boiling." In ASME 1998 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 1998. http://dx.doi.org/10.1115/imece1998-0653.

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Abstract A method of measuring temperature fluctuations on a silicon wafer during boiling is described. The technique consists of building an array of diodes on a silicon wafer using VLSI techniques, and exploiting the fact that the forward voltage drop across a silicon diode typically is approximately proportional to the inverse of the absolute temperature of the diode. Once a calibration of voltage drop vs. temperature is obtained, the temperature of each diode can be obtained by scanning across the diode array. A 32 × 32 array of diodes (1024 diodes) has been built. Each diode in the array
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Özbay, E., and D. M. Bloom. "Triggering with Subpicosecond Jitter Using Resonant Tunneling Diodes." In Picosecond Electronics and Optoelectronics. Optica Publishing Group, 1991. http://dx.doi.org/10.1364/peo.1991.fb1.

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Resonant tunneling diodes (RTD's) with their superior high frequency characteristics, are attractive for high speed applications. As RTD's have terminal characteristics very similar to the Esaki Tunnel Diode, all current high speed applications of Esaki Tunnel Diode are good candidates for the use of new tunneling device. One such application is in high frequency trigger circuits.
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Wang, Junrong, Qi Xiao, Hanbing Ke, Xu Hu, Shaodan Li, and Zhiguo Wei. "Numerical Simulation of Flow Instability in Vortex Diodes." In 2017 25th International Conference on Nuclear Engineering. American Society of Mechanical Engineers, 2017. http://dx.doi.org/10.1115/icone25-66512.

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A vortex diode is used as a highly reliable check-valve in nuclear applications, where it mainly benefits from the intrinsic properties of no moving parts and no leakage. Its basic principle is similar to the diode in an electric circuit. The typical structure of a vortex diode consists of a chamber with axial and tangential ports. When the fluid is injected through the axial port, a simple radial flow in the chamber leads to a relatively low flow resistance. On the other hand, in the reverse flow mode, a strongly swirling vortex can be set up in the chamber, resulting in a very high flow resi
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Kuan, C. H., Ray-Ming Lin, Shiang-Feng Tang, and Tai-Ping Sun. "Investigation of temperature dependence in the dark current of InAs diode detectors." In The European Conference on Lasers and Electro-Optics. Optica Publishing Group, 1996. http://dx.doi.org/10.1364/cleo_europe.1996.cthi8.

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InAs diode detectors are good for ~3 pm wavelength detection and promising to operate at high temperature (T). In order to decrease the dark current at high T, we have studied the I-V characteristics of the PIN (SI066) and PN (S1135) diodes, and concluded the dominant current mechanics at various T. The two diodes are grown on the InAs N-type substrates. The doping densities of the PIN diode are 3×1017 cm-3 and 6.7×1016 cm-3 for P and N types respectively, and the thickness of the intrinsic layer is 0.14µm. Those of the PN diode are 1 × 1016 cm-3 and 1×1016 cm-3. The mesa shape of the diodes i
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Brown, E. R., C. D. Parker, T. C. L. G. Sollner, C. I. Huang, and C. E. Stutz. "New Equivalent-Circuit Model for Resonant Tunneling Diodes." In Picosecond Electronics and Optoelectronics. Optica Publishing Group, 1989. http://dx.doi.org/10.1364/peo.1989.trt115.

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It is shown that a "quantum-well inductance" can account for the effect of quasibound-state lifetime on the speed of resonant-tunneling diodes. This is demonstrated theoretically using a linear-response analysis of the conduction current through a double-barrier diode. The inductance is then incorporated into a new equivalent circuit that is used to predict the oscillation characteristics of a diode designed to make the quasibound-state lifetime longer than any other speed-limiting time constant in the device.
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Pavlidis, Georges, James Dallas, Sukwon Choi, Shyh-Chiang Shen, and Samuel Graham. "Steady State and Transient Thermal Characterization of Vertical GaN PIN Diodes." In ASME 2017 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems collocated with the ASME 2017 Conference on Information Storage and Processing Systems. American Society of Mechanical Engineers, 2017. http://dx.doi.org/10.1115/ipack2017-74149.

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In this work, we investigate the thermal response of GaN PIN diodes grown on a sapphire substrate and compare the results to GaN PIN diodes grown on a free standing GaN substrate (FS-GaN). Until now, thermal characterization techniques have been developed to assess the temperature distribution across lateral devices. Raman thermometry has shown to accurately measure the temperature rise across the depth of the GaN layer. Implementing this technique to assess the temperature distribution across the depth of a vertical GaN device is more challenging since a volumetric depth average is measured.
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Köck, A., C. Gmachl, E. Gornik, L. Korte, M. Rosenberger, and P. Lustoza de Souza. "Surface mode-coupling in GaAs/AlGaAs laser diodes—a new technique for a single mode laser." In The European Conference on Lasers and Electro-Optics. Optica Publishing Group, 1994. http://dx.doi.org/10.1364/cleo_europe.1994.cthg2.

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Single longitudinal mode laser diodes are of high interest for optical fiber transmission systems. Among the many types of single mode laser diode structures the distributed feedback (DFB) laser diode presently seems to be most promising.
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Yoo, Tae-Kyung, Won-Jin Choi, Jong-Seok Kim, and In-Sung Cho. "635nm Laser Diode with Pulsation Mode for DVD Optical Pickup." In Symposium on Optical Memory. Optica Publishing Group, 1996. http://dx.doi.org/10.1364/isom.1996.ofb.4.

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635nm wavelength laser diodes have been one of the most important components establishing the characteristics of DVD optical pickups. Especially, the spectral mode of laser diodes plays a great role in determining the signal-to-noise(S/N) performance of optical pickups, because the laser beam reflected from the disc is partly re-injected into the laser diode and interferes with the laser source[1]. In order to suppress this interference, the laser diodes need a self-pulsation property in inherent spectral characteristics, which is able to reduce the interference considerably. However, it is ve
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Reports on the topic "Diodes"

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MW Dashiell, JF Beausang, H Ehsani, et al. Quaternary InGaAsSb Thermophotovoltaic Diodes. Office of Scientific and Technical Information (OSTI), 2006. http://dx.doi.org/10.2172/881293.

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Maby, Edward W., Ronald J. Gutmann, Ted Letavic, and Stephen Wu. Silicon-on-Insulator Pin Diodes. Defense Technical Information Center, 1987. http://dx.doi.org/10.21236/ada193359.

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Choquette, Kent D., Jr Raftery, and James J. Photonic Crystal Light Emitting Diodes. Defense Technical Information Center, 2006. http://dx.doi.org/10.21236/ada459348.

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Dowd, James. QA Testing of Si Diodes. Office of Scientific and Technical Information (OSTI), 2021. http://dx.doi.org/10.2172/1832338.

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Baumgartner, Franz, Cyril Allenspach, Ebrar Özkalay, et al. Performance of Partially Shaded PV Generators Operated by Optimized Power Electronics 2024. Edited by Ulrike Jahn. International Energy Agency Photovoltaic Power Systems Programme, 2024. https://doi.org/10.69766/leof5152.

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Inhomogeneous shading on the PV generator leads to disproportionately high losses. As the potential of PV generation on roofs or façades is to be increasingly utilised in the coming decades, these cases will occur more frequently. The aim here is to provide an overview of the challenges and state-of-the-art technical solutions for partial shading. Current developments in PV engineering show that maximum performance lies in the combination between optimised module placement, the use of modules that are tolerant of shading and optimised power electronics. Shortly after the discovery of the solar
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Phifer, Carol Celeste. Effects of radiation on laser diodes. Office of Scientific and Technical Information (OSTI), 2004. http://dx.doi.org/10.2172/919636.

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Ren, F., C. R. Abernathy, and J. D. MacKenzie. Dielectrics for GaN based MIS-diodes. Office of Scientific and Technical Information (OSTI), 1998. http://dx.doi.org/10.2172/634115.

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Gunshor, Robert L. Electrical Properties of Blue Laser Diodes. Defense Technical Information Center, 1998. http://dx.doi.org/10.21236/ada361825.

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VAWTER, GREGORY A., ALAN MAR, WENG W. CHOW, and ANDREW A. ALLERMAN. Advanced laser diodes for sensing applications. Office of Scientific and Technical Information (OSTI), 2000. http://dx.doi.org/10.2172/752016.

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Yang, Zhang. Laser diodes with intensive cooling system. Intellectual Archive, 2024. http://dx.doi.org/10.32370/iaj.3153.

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Abstract:
Для инфраструктуры умного дома и для её экосистемы в целом вопросы освещения имеют принципиальную важность ; Целый ряд параметров энергетического обеспечения освещения и надёжность конструкций осветительных приборов в условиях нормального функционирования умного дома или умного производственного или офисного помещений требуют решений с применением элементов искусственного интеллекта и искусственных нейронных сетей В свою очередь принятие центрального решения о применении в осветительной системе умного дома , умного производственного помещения , умного складского помещения и умного офисного пом
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