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Relevant bibliographies by topics / Diodes PiN

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Academic literature on the topic 'Diodes PiN'

Author: Grafiati

Published: 4 June 2021

Last updated: 12 October 2024

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Journal articles on the topic "Diodes PiN"

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Min, Seong-Ji, Michael A. Schweitz, Ngoc Thi Nguyen, and Sang-Mo Koo. "Comparison of Temperature Sensing Performance of 4H-SiC Schottky Barrier Diodes, Junction Barrier Schottky Diodes, and PiN Diodes." Journal of Nanoscience and Nanotechnology 21, no. 3 (2021): 2001–4. http://dx.doi.org/10.1166/jnn.2021.18934.

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We present a comparison between the thermal sensing behaviors of 4H-SiC Schottky barrier diodes, junction barrier Schottky diodes, and PiN diodes in a temperature range from 293 K to 573 K. The thermal sensitivity of the devices was calculated from the slope of the forward voltage versus temperature plot. At a forward current of 10 μA, the PiN diode presented the highest sensitivity peak (4.11 mV K−1), compared to the peaks of the junction barrier Schottky diode and the Schottky barrier diode (2.1 mV K−1 and 1.9 mV K−1, respectively). The minimum temperature errors of the PiN and junction barr

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Hull, Brett A., Mrinal K. Das, Jim Richmond, et al. "High Current 6 kV 4H-SiC PiN Diodes for Power Module Switching Applications." Materials Science Forum 527-529 (October 2006): 1355–58. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1355.

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Forward voltage (VF) drift, in which a 4H-SiC PiN diode suffers from an irreversible increase in VF under forward current flow, continues to inhibit commercialization of 4H-SiC PiN diodes. We present our latest efforts at fabricating high blocking voltage (6 kV), high current (up to 50 A) 4H-SiC PiN diodes with the best combination of reverse leakage current (IR), forward voltage at rated current (VF), and VF drift yields. We have achieved greater than 60% total die yield onwafer for 50 A diodes with a chip size greater than 0.7 cm2. A comparison of the temperature dependent conduction and swi

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Luo, Yong, Hongtao Liu, Yiming He, Hengrong Cui, and Guangli Yang. "Continuous Resonance Tuning without Blindness by Applying Nonlinear Properties of PIN Diodes." Sensors 21, no. 8 (2021): 2816. http://dx.doi.org/10.3390/s21082816.

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Metamaterial antennas consisting of periodical units are suitable for achieving tunable properties by employing active elements to each unit. However, for compact metamaterials with a very limited number of periodical units, resonance blindness exists. In this paper, we introduce a method to achieve continuous tuning without resonance blindness by exploring hence, taking advantage of nonlinear properties of PIN diodes. First, we obtain the equivalent impedance of the PIN diode through measurements, then fit these nonlinear curves with mathematical expressions. Afterwards, we build the PIN diod

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Nakayama, Koji, Yoshitaka Sugawara, Hidekazu Tsuchida, et al. "8.3 kV 4H-SiC PiN Diode on (000-1) C-Face with Small Forward Voltage Degradation." Materials Science Forum 483-485 (May 2005): 969–72. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.969.

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The dependence of forward voltage degradation on crystal faces for 4H-SiC pin diodes has been investigated. The forward voltage degradation has been reduced by fabricating the diodes on the (000-1) C-face off-angled toward <11-20>. High-voltage 4H-SiC pin diodes on the (000-1) C-face with small forward voltage degradation have also been fabricated successfully. A high breakdown voltage of 4.6 kV and DVf of 0.04 V were achieved for a (000-1) C-face pin diode. A 8.3 kV blocking performance, which is the highest voltage in the use of (000-1) C-face, is also demonstrated in 4H-SiC pin diode.

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Nakayama, Koji, Ryosuke Ishii, Katsunori Asano, Tetsuya Miyazawa, Masahiko Ito, and Hidekazu Tsuchida. "Component Technologies for Ultra-High-Voltage 4H-SiC pin Diode." Materials Science Forum 679-680 (March 2011): 535–38. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.535.

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Forward voltage drops of carbon implanted and thermal oxidized pin diode with thick drift layer are investigated to evaluate the effect on the lifetime. The forward voltage drops of the carbon implanted and thermal oxidized pin diodes with drift layer of 120 μm thick were around 4.0 V. Furthermore, blocking characteristics of 4H-SiC pin diodes with mesa-JTE, which were fabricated on C-face and Si-face substrates, are also investigated. The breakdown voltages of pin diodes with 250 μm and 100 μm epitaxial layers are 17.1 kV and 10.9 kV, respectively.

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Sharma, Sonia, Rahul Rishi, Chander Prakash, Kuldeep K. Saxena, Dharam Buddhi, and N. Ummal Salmaan. "Characterization and Performance Evaluation of PIN Diodes and Scope of Flexible Polymer Composites for Wearable Electronics." International Journal of Polymer Science 2022 (September 13, 2022): 1–10. http://dx.doi.org/10.1155/2022/8331886.

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Different semiconductor materials have been used for the fabrication of PIN diodes such as Si, Ge, GaAs, SiC-3C, SiC-4H, and InAs. These different semiconductor materials show different characteristics and advantages such as SiC-4H is ultrafast switch. But, when flexible polymers composites like Si-nanomembranes, polyethylene terephthalate (PET), and biodegradable polymer composite like carbon nanotubes (CNT) are used for fabrication, the device has the capability to switch from rigid electronic devices to flexible and wearable electronic devices. These polymer composites’ outstanding characte

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Parker-Allotey, Nii Adotei, Dean P. Hamilton, Olayiwola Alatise, et al. "Improved Energy Efficiency Using an IGBT/SiC-Schottky Diode Pair." Materials Science Forum 717-720 (May 2012): 1147–50. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1147.

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This paper will demonstrate how the newer Silicon Carbide material semiconductor power devices can contribute to carbon emissions reduction and the speed of adoption of electric vehicles, including hybrids, by enabling significant increases in the driving range. Two IGBT inverter leg modules of identical power rating have been manufactured and tested. One module has silicon-carbide (SiC) Schottky diodes as anti-parallel diodes and the other silicon PiN diodes. The power modules have been tested and demonstrate the superior electrothermal performance of the SiC Schottky diode over the Si PiN di

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Pratap Singh Sengar, Anand, and Aman Dahiya. "Reconfigurable Smart Antenna for Wireless Communication Devices." International Journal of Engineering & Technology 7, no. 4.5 (2018): 271. http://dx.doi.org/10.14419/ijet.v7i4.5.20086.

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In this paper a frequency reconfigurable antenna is proposed. The antenna uses electrical switching by means of PIN diodes to achieve reconfigurable properties. PIN diodes are located such that to increase the total effective surface area and simultaneously the surface current. Three slots are cut from antenna to alter the surface current and improve the resonant frequency of the antenna. The location of the PIN diodes is based on optimization in the response. Diode 1 is placed to excite another patch when it will be in ON state whereas diode 2 is used to make an interconnect. Antenna resonate

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Nakayama, Koji, Atsushi Tanaka, Katsunori Asano, Tetsuya Miyazawa, and Hidekazu Tsuchida. "Influence of in-Grown Stacking Faults on Electrical Characteristics of 4H-SiC Pin Diode with Long Carrier Lifetime." Materials Science Forum 740-742 (January 2013): 903–6. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.903.

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The electrical characteristics of 4H-SiC pin diodes with 8H-type in-grown stacking faults are investigated. The pin diodes have epilayers with low Z1/2center concentration formed by using the carbon implantation process. The forward voltage drops of the diode with 8H-type in-grown stacking faults are larger than those of the diode without a 8H-type in-grown stacking fault. At room temperature, the differential on-resistance of the pin diode with 8H-type in-grown stacking faults is larger than the value calculated from donor concentration in the drift layer by using the current transportation m

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Huang, Yaren, Benedikt Lechner, and Gerhard Wachutka. "Comparative Numerical Analysis of the Robustness of Si and SiC PiN Diodes Against Cosmic Radiation-Induced Failure." Materials Science Forum 1004 (July 2020): 1088–96. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.1088.

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This work aims at extending the predictive simulation technique for cosmic ray-induced failure analysis from Si PiN diodes [1] to SiC PiN diodes. Accurate 3D cylindrical-symmetric transient simulations were performed with a minimum mesh size of 20nm at the center track of the impinging ion and a maximum time step of 0.1ps during the development of the ion-induced transient current. We made a comparative study between a SiC PiN diode and a Si PiN diode with the same blocking voltage of 1.5kV, using the same heavy ion transportation models. In the simulation, we observed different ion-induced cu

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Dissertations / Theses on the topic "Diodes PiN"

1

Jackson, Ruth P. "PIN diodes : Requirements for millimetre-wave reflection." Thesis, Queen's University Belfast, 2011. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.534723.

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Anutgan, Mustafa. "Nanocrystal Silicon Based Visible Light Emitting Pin Diodes." Phd thesis, METU, 2010. http://etd.lib.metu.edu.tr/upload/12612718/index.pdf.

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The production of low cost, large area display systems requires a light emitting material compatible with the standard silicon (Si) based complementary metal oxide semiconductor (CMOS) technology. The crystalline bulk Si is an indirect band semiconductor with very poor optical properties. On the other hand, hydrogenated amorphous Si (a-Si:H) based wide gap alloys exhibit strong visible photoluminescence (PL) at room temperature, owing to the release of the momentum conservation law. Still, the electroluminescence (EL) intensity from the diodes based on these alloys is weak due to the limitatio

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Tosi, Hervé. "Modélisation d'antennes reconfigurables à diodes PIN et Varicap par la TLM." Nice, 2003. http://www.theses.fr/2003NICE4051.

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Les antennes actives sont des structures rayonnantes compactes intégrant des éléments actifs. Les composants intégrés permettent de réaliser des fonctions d’oscillation, d’amplification et de communication directement sur l’antenne, évitant ainsi les pertes ohmiques et l’addition de bruits sur les signaux à traiter ? La multiplication de bandes de fréquences à couvrir à conduit au développement intensif d’antennes reconfigurables en fréquence. La variation de la tension de polarisation des composants permet, alors, de commander la fréquence de résonnance de l’antenne et couvrir, ainsi, de larg

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Landowshi, Matthew M. "Modeling and analysis of reverse recovery in PiN power diodes in series." Honors in the Major Thesis, University of Central Florida, 2008. http://digital.library.ucf.edu/cdm/ref/collection/ETH/id/1101.

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This item is only available in print in the UCF Libraries. If this is your Honors Thesis, you can help us make it available online for use by researchers around the world by following the instructions on the distribution consent form at http://library.ucf.edu/Systems/DigitalInitiatives/DigitalCollections/InternetDistributionConsentAgreementForm.pdf You may also contact the project coordinator, Kerri Bottorff, at kerri.bottorff@ucf.edu for more information.<br>Bachelors<br>Engineering and Computer Science<br>Electrical Engineering

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Choudhury, Imran. "Design of Variable Attenuators Using Different Kinds of PIN-Diodes." Thesis, Linköpings universitet, Fysik och elektroteknik, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-98674.

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Variable attenuators are important circuits that can be employed in many radio frequency (RF) applications, e.g., in automatic gain control (AGC) amplifiers, broadband gain-control blocks at RF frequencies or as broadband vector modulators. For any applications, low insertion phase shift and low power consumption are of interest. A way to implement variable attenuators is using the RF PIN diode. The PIN diode is characterized by a low doped (I = intrinsic) semiconductor region between p- (P) and n-type (N) semiconductor regions. Besides the variable attenuators, the PIN-diode is used in other

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Fisher, Craig A. "Development of 4H-SiC PiN diodes for high voltage applications." Thesis, University of Warwick, 2014. http://wrap.warwick.ac.uk/62126/.

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Despite the excellent electrical and thermal properties of 4H-silicon carbide (SiC), the fabrication of high-voltage SiC power devices is still proving problematic, being hindered by material defects resulting in low carrier lifetimes and forward voltage drift, and suboptimum ohmic contacts to p-type material. The PiN diode is one such device that suffers from the aforementioned problems, though at the same time is sought after for high voltage power electronics applications due to the prospect of greatly reduced power losses and increased power handling capability than the Si devices currentl

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Ducroquet, Frédérique. "Influence des niveaux profonds et des phénomènes de surface sur les caractéristiques électriques de photodiodes GaInAs." Lyon, INSA, 1989. http://www.theses.fr/1989ISAL0093.

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L'analyse du courant d'obscurité de photodiodes GaInAs de type PIN pour télécommunications otiques montre qu'il est souvent dominé par un courant de surface, générateur de bruit et cause d'instabilités temporelles, qu'il convient de réduire. Parvenir à une passivation efficace de la surface n'entraînant pas de dégradation notable des propriétés de la surface constitue donc l'un des aspects technologiques déterminants pour l'obtention de dispositifs performants. L'objectif de ce travail est d'étudier l'influence des défauts de volume et ceux liés à la passivation sur les performances électrique

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Mikul, Alex Olegovich. "SPDT switch, attenuator and 3-bit passive phase shifter based on a novel SiGe PIN diode." Pullman, Wash. : Washington State University, 2009. http://www.dissertations.wsu.edu/Thesis/Fall2009/a_mikul_111909.pdf.

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Thesis (M.S. in electrical engineering)--Washington State University, December 2009.<br>Title from PDF title page (viewed on Dec. 28, 2009). "School of Electrical Engineering and Computer Science." Includes bibliographical references (p. 49-51).

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Fung, Ka Man. "Injection characteristics of transport layers in PIN OLED." HKBU Institutional Repository, 2012. https://repository.hkbu.edu.hk/etd_ra/1448.

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Vigano, Andre De Souza. "Simulation of an SP8T 18 GHz RF Switch Using SMT PIN Diodes." DigitalCommons@CalPoly, 2020. https://digitalcommons.calpoly.edu/theses/2259.

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Radio frequency (RF) and microwave switches are widely used in several different applications including radar, measurement systems, telecommunications, and other areas. An RF switch can control a radar’s transmit vs. receive mode, select the operating band, or direct an RF signal to different paths. In this study, a single pole eight throw (SP8T) switch using only Surface Mount (SMT) components is designed and simulated in Keysight’s Advanced Design System (ADS). Single pole eight throw is defined as one input and eight possible outputs. A star network configuration with series-shunt PIN diode

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Books on the topic "Diodes PiN"

1

L, Kernell R., Reft Chester, Old Dominion University. Dept. of Physics., and Goddard Space Flight Center, eds. Radiation effects induced in pin photodiodes by 40- and 85-MeV protons: Progress report for the period ending January 31, 1985. Old Dominion University Research Foundation, 1985.

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N, Simons R., and Lewis Research Center, eds. Channelized coplanar waveguide pin-diode switches. Lewis Research Center, 1989.

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Thiem, Keem B. Widebanding techniques for VHF antennas - II. Naval Postgraduate School, 1993.

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Rahim, Suhail Muhammad Abdur. Modelling the PIN diode for circuit simulation. University ofManchester, 1994.

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Chen, Xianghong. Study of a pin diode for high power device applications. National Library of Canada, 1993.

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Pérez, Emiliano Sánchez. Nicolás Videla del Pino, primer Obispo de Salta: Documentación archivística. Arzobispado de Salta, Servicio de Publicaciones, 2011.

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Willard, Frank. Log, stone and brick: A pen and ink pictorial history of Anglican churches in the Diocese of Keewatin. F. Willard, 1987.

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Catholic Church. Archdiocese of Quebec. Little manual for the Jubilee of 1875 in the Arch-diocese of Quebec. N.S. Hardy, 1986.

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Navarro, Antonia Rascón de. Venciendo resistencias en los nuevos caminos pastorales: La fuerza espiritual de: Teodoro Enrique Pino Miranda, Obispo de Huajuapan de León, Oaxaca. s. n., 2005.

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Museo del Templo Mayor (Mexico City, Mexico), ed. Humo aromático para los dioses: Una ofrenda de sahumadores al pie del Templo Mayor de Tenochtitlan : Museo del Temploy Mayor, INAH, abril-agosto de 2012. Instituto Nacional de Antropología e Historia, 2012.

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Book chapters on the topic "Diodes PiN"

1

Lutz, Josef, Heinrich Schlangenotto, Uwe Scheuermann, and Rik De Doncker. "pin Diodes." In Semiconductor Power Devices. Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-70917-8_5.

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Lutz, Josef, Heinrich Schlangenotto, Uwe Scheuermann, and Rik De Doncker. "pin-Diodes." In Semiconductor Power Devices. Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-11125-9_5.

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Vang, Heu, Christophe Raynaud, Pierre Brosselard, et al. "1.2 kV Pin Diodes with SiCrystal Epiwafer." In Materials Science Forum. Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-442-1.901.

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Ayalew, T., Sang Cheol Kim, T. Grasser, and S. Selberherr. "Numerical Analysis of SiC Merged PiN Schottky Diodes." In Materials Science Forum. Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-963-6.949.

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Twigg, M. E., Robert E. Stahlbush, P. A. Losee, Can Hua Li, I. Bhat, and T. P. Chow. "Overlapping Shockley/Frank Faults in 4H-SiC PiN Diodes." In Silicon Carbide and Related Materials 2005. Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.383.

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Zubert, M., M. Janicki, M. Napieralska, G. Jablonski, L. Starzak, and A. Napieralski. "Behavioural Electro-Thermal Modelling of SiC Merged PiN Schottky Diodes." In Scientific Computing in Electrical Engineering SCEE 2010. Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-22453-9_24.

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Das, Mrinal K., Joseph J. Sumakeris, Brett A. Hull, and James Richmond. "Evolution of Drift-Free, High Power 4H-SiC PiN Diodes." In Silicon Carbide and Related Materials 2005. Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.1329.

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Boltovets, Mykola S., Volodymyr V. Basanets, A. V. Zorenko, et al. "CM-Wave Modulator with High-Voltage 4H SiC pin Diodes." In Silicon Carbide and Related Materials 2005. Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.1379.

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Cao, X. A., M. Larsen, H. Lu, and Steve Arthur. "Structural Properties and Electrical Characteristics of Homoepitaxial GaN PiN Diodes." In Silicon Carbide and Related Materials 2005. Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.1541.

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Gonçalves, Dora, Miguel Fernandes, Paula Louro, Alessandro Fantoni, and Manuela Vieira. "Simulation in Amorphous Silicon and Amorphous Silicon Carbide Pin Diodes." In Technological Innovation for Collective Awareness Systems. Springer Berlin Heidelberg, 2014. http://dx.doi.org/10.1007/978-3-642-54734-8_67.

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Conference papers on the topic "Diodes PiN"

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Lin, Shuyun, Yanqing Cheng, Jinqi Dong, Yao Zhou, and Qi Chen. "A Microstrip Energy Selective Antenna Based on PIN Diodes." In 2024 Photonics & Electromagnetics Research Symposium (PIERS). IEEE, 2024. http://dx.doi.org/10.1109/piers62282.2024.10618858.

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Xiao, Gengbo, Botao Feng, Xiao Ding, Li Deng, Kwok L. Chung, and Wenzhe Gu. "A Leaky-Wave Beam Scanning Antenna with PIN Diodes." In 2024 IEEE 7th International Conference on Electronic Information and Communication Technology (ICEICT). IEEE, 2024. http://dx.doi.org/10.1109/iceict61637.2024.10670736.

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Liu, Xin, Rikang Zhao, Jianxin Zhao, Bin Chen, Hongwei Zhang, and Guilin Shi. "Design of High-Power Microwave Combiner Based on PIN Diodes Technology." In 2024 International Conference on Microwave and Millimeter Wave Technology (ICMMT). IEEE, 2024. http://dx.doi.org/10.1109/icmmt61774.2024.10672450.

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Pavlidis, Georges, James Dallas, Sukwon Choi, Shyh-Chiang Shen, and Samuel Graham. "Steady State and Transient Thermal Characterization of Vertical GaN PIN Diodes." In ASME 2017 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems collocated with the ASME 2017 Conference on Information Storage and Processing Systems. American Society of Mechanical Engineers, 2017. http://dx.doi.org/10.1115/ipack2017-74149.

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In this work, we investigate the thermal response of GaN PIN diodes grown on a sapphire substrate and compare the results to GaN PIN diodes grown on a free standing GaN substrate (FS-GaN). Until now, thermal characterization techniques have been developed to assess the temperature distribution across lateral devices. Raman thermometry has shown to accurately measure the temperature rise across the depth of the GaN layer. Implementing this technique to assess the temperature distribution across the depth of a vertical GaN device is more challenging since a volumetric depth average is measured.

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Kuan, C. H., Ray-Ming Lin, Shiang-Feng Tang, and Tai-Ping Sun. "Investigation of temperature dependence in the dark current of InAs diode detectors." In The European Conference on Lasers and Electro-Optics. Optica Publishing Group, 1996. http://dx.doi.org/10.1364/cleo_europe.1996.cthi8.

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InAs diode detectors are good for ~3 pm wavelength detection and promising to operate at high temperature (T). In order to decrease the dark current at high T, we have studied the I-V characteristics of the PIN (SI066) and PN (S1135) diodes, and concluded the dominant current mechanics at various T. The two diodes are grown on the InAs N-type substrates. The doping densities of the PIN diode are 3×1017 cm-3 and 6.7×1016 cm-3 for P and N types respectively, and the thickness of the intrinsic layer is 0.14µm. Those of the PN diode are 1 × 1016 cm-3 and 1×1016 cm-3. The mesa shape of the diodes i

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Chitra, R. Jothi, and V. Nagarajan. "Frequency reconfigurable antenna using PIN diodes." In 2014 Twentieth National Conference on Communications (NCC). IEEE, 2014. http://dx.doi.org/10.1109/ncc.2014.6811318.

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Halbritter, Hubert, Chenna Dhanavantri, Martin Strassner, et al. "Tunable and wavelength-selective PIN diodes." In Microelectronics, MEMS, and Nanotechnology, edited by Chennupati Jagadish, Kent D. Choquette, Benjamin J. Eggleton, Brett D. Nener, and Keith A. Nugent. SPIE, 2004. http://dx.doi.org/10.1117/12.522044.

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Ramírez-Jiménez, F. J. "X-Ray Spectroscopy with PIN diodes." In PARTICLES AND FIELDS: X Mexican Workshop on Particles and Fields. AIP, 2006. http://dx.doi.org/10.1063/1.2359248.

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Barov, A., and S. Gushchin. "GaAs MMIC PIN Diodes SPDT Switcher." In 2006 16th International Crimean Microwave and Telecommunication Technology. IEEE, 2006. http://dx.doi.org/10.1109/crmico.2006.256356.

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Ji Hu, O. Alatise, J. A. O. Gonzalez, P. Mawby, and L. Ran. "Avalanche Ruggedness of Parallel Connected Diodes: SiC Schottky Diodes vs Silicon PiN Diodes." In 8th IET International Conference on Power Electronics, Machines and Drives (PEMD 2016). Institution of Engineering and Technology, 2016. http://dx.doi.org/10.1049/cp.2016.0359.

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Reports on the topic "Diodes PiN"

1

Maby, Edward W., Ronald J. Gutmann, Ted Letavic, and Stephen Wu. Silicon-on-Insulator Pin Diodes. Defense Technical Information Center, 1987. http://dx.doi.org/10.21236/ada193359.

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Wierer, J. J., Andrew A. Allerman, Jeramy Ray Dickerson, et al. Vertical GaN PIN Diodes with 5 kV Avalanche Breakdown. Office of Scientific and Technical Information (OSTI), 2015. http://dx.doi.org/10.2172/1221707.

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Vizkelethy, Gyorgy, Brandon Adrian Aguirre, and Edward S. Bielejec. Analysis of the IBL and LBNL irradiated PIN and PN diodes. Office of Scientific and Technical Information (OSTI), 2018. http://dx.doi.org/10.2172/1459608.

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Wampler, W. R., and B. L. Doyle. Low-energy beta spectroscopy using pin diodes to monitor tritium surface contamination. Office of Scientific and Technical Information (OSTI), 1994. http://dx.doi.org/10.2172/10169800.

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Awschalom, M., R. Florian, and M. Tatcher. Neutron Dosimetry: A Pin Diode Reader. Office of Scientific and Technical Information (OSTI), 1985. http://dx.doi.org/10.2172/1151452.

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Shiltsev, V. Fast PIN-diode beam loss monitors at Tevatron. Office of Scientific and Technical Information (OSTI), 1997. http://dx.doi.org/10.2172/555394.

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Jernigan, J. G. PIN diode array x-ray imaging. Final Technical report. Office of Scientific and Technical Information (OSTI), 1996. http://dx.doi.org/10.2172/379044.

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Drees, A., C. Montag, and P. Thieberger. Pin diode calibration - beam overlap monitoring for low energy cooling. Office of Scientific and Technical Information (OSTI), 2015. http://dx.doi.org/10.2172/1224765.

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Jacobs, W., C. Sun, R. Nguyen, D. Fogliatti, and H. Nguyen. Optically Controlled Pin-Diode RF Switching for Tactical Signal Intelligence Technology. Defense Technical Information Center, 2001. http://dx.doi.org/10.21236/ada390023.

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Flillerlll R. and A. Drees. Beam Profile Measurements and PIN Diode Calibration Using the RHIC Collimators. Office of Scientific and Technical Information (OSTI), 2004. http://dx.doi.org/10.2172/1061725.

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