Journal articles: 'Diodes, Schottky-barrier'

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Min, Seong-Ji, Michael A. Schweitz, Ngoc Thi Nguyen, and Sang-Mo Koo. "Comparison of Temperature Sensing Performance of 4H-SiC Schottky Barrier Diodes, Junction Barrier Schottky Diodes, and PiN Diodes." Journal of Nanoscience and Nanotechnology 21, no. 3 (March 1, 2021): 2001–4. http://dx.doi.org/10.1166/jnn.2021.18934.

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We present a comparison between the thermal sensing behaviors of 4H-SiC Schottky barrier diodes, junction barrier Schottky diodes, and PiN diodes in a temperature range from 293 K to 573 K. The thermal sensitivity of the devices was calculated from the slope of the forward voltage versus temperature plot. At a forward current of 10 μA, the PiN diode presented the highest sensitivity peak (4.11 mV K−1), compared to the peaks of the junction barrier Schottky diode and the Schottky barrier diode (2.1 mV K−1 and 1.9 mV K−1, respectively). The minimum temperature errors of the PiN and junction barrier Schottky diodes were 0.365 K and 0.565 K, respectively, for a forward current of 80 μA±10 μA. The corresponding value for the Schottky barrier diode was 0.985 K for a forward current of 150 μA±10 μA. In contrast to Schottky diodes, the PiN diode presents a lower increase in saturation current with temperature. Therefore, the nonlinear contribution of the saturation current with respect to the forward current is negligible; this contributes to the higher sensitivity of the PiN diode, allowing for the design and fabrication of highly linear sensors that can operate in a wider temperature range than the other two diode types.

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Zhao, Jian H., Kuang Sheng, and Ramon C. Lebron-Velilla. "SILICON CARBIDE SCHOTTKY BARRIER DIODE." International Journal of High Speed Electronics and Systems 15, no. 04 (December 2005): 821–66. http://dx.doi.org/10.1142/s0129156405003430.

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This chapter reviews the status of SiC Schottky barrier diode development. The fundamentals of Schottky barrier diodes are first provided, followed by the review of high-voltage SiC Schottky barrier diodes, junction-barrier Schottky diodes and merged-pin-Schottky diodes. The development history is reviewed and the key performance parameters are discussed. Applications of SiC SBDs in power electronics circuits as well as other areas such as gas sensors, microwave and UV detections are also presented, followed by discussion of remaining challenges.

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Okino, Hiroyuki, Norifumi Kameshiro, Kumiko Konishi, Naomi Inada, Kazuhiro Mochizuki, Akio Shima, Natsuki Yokoyama, and Renichi Yamada. "Electrical Characteristics of Large Chip-Size 3.3 kV SiC-JBS Diodes." Materials Science Forum 740-742 (January 2013): 881–86. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.881.

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The reduction of reverse leakage currents was attempted to fabricate 4H-SiC diodes with large current capacity for high voltage applications. Firstly diodes with Schottky metal of titanium (Ti) with active areas of 2.6 mm2 were fabricated to investigate the mechanisms of reverse leakage currents. The reverse current of a Ti Schottky barrier diode (SBD) is well explained by the tunneling current through the Schottky barrier. Then, the effects of Schottky barrier height and electric field on the reverse currents were investigated. The high Schottky barrier metal of nickel (Ni) effectively reduced the reverse leakage current to 2 x 10-3 times that of the Ti SBD. The suppression of the electric field at the Schottky junction by applying a junction barrier Schottky (JBS) structure reduced the reverse leakage current to 10-2 times that of the Ni SBD. JBS structure with high Schottky barrier metal of Ni was applied to fabricate large chip-size SiC diodes and we achieved 30 A- and 75 A-diodes with low leakage current and high breakdown voltage of 4 kV.

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Shashikala, B. N., and B. S. Nagabhushana. "Reduction of reverse leakage current at the TiO2/GaN interface in field plate Ni/Au/n-GaN Schottky diodes." Semiconductor Physics, Quantum Electronics and Optoelectronics 24, no. 04 (November 23, 2021): 399–406. http://dx.doi.org/10.15407/spqeo24.04.399.

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This paper presents the fabrication procedure of TiO2 passivated field plate Schottky diode and gives a comparison of Ni/Au/n-GaN Schottky barrier diodes without field plate and with field plate of varying diameters from 50 to 300 µm. The influence of field oxide (TiO2) on the leakage current of Ni/Au/n-GaN Schottky diode was investigated. This suggests that the TiO2 passivated structure reduces the reverse leakage current of Ni/Au/n-GaN Schottky diode. Also, the reverse leakage current of Ni/Au/n-GaN Schottky diodes decreases as the field plate length increases. The temperature-dependent electrical characteristics of TiO2 passivated field plate Ni/Au/n-GaN Schottky diodes have shown an increase of barrier height within the temperature range 300…475 K.

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Hjort, Tomas, Adolf Schöner, Andy Zhang, Mietek Bakowski, Jang-Kwon Lim, and Wlodek Kaplan. "High Temperature capable SiC Schottky diodes, based on buried grid design." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2014, HITEC (January 1, 2014): 000058–60. http://dx.doi.org/10.4071/hitec-tp11.

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Electrical characteristics of 4H-SiC Schottky barrier diodes, based on buried grid design are presented. The diodes, rated to 1200V/10A and assembled into high temperature capable TO254 packages, have been tested and studied up to 250°C. Compared to conventional SiC Schottky diodes, Ascatron's buried grid SiC Schottky diode demonstrates several orders of magnitude reduced leakage current at high temperature operation.

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Shin, Myeong-Cheol, Dong-Hyeon Kim, Seong-Woo Jung, Michael A. Schweitz, and Sang-Mo Koo. "Temperature Sensors Based on AlN/4H-SiC Diodes." Science of Advanced Materials 13, no. 7 (July 1, 2021): 1318–23. http://dx.doi.org/10.1166/sam.2021.3989.

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ABSTRACTThis study report on the formation of AlN/SiC heterostructure Schottky diodes for use of temperature sensing applications enhance the sensitivity. We analyzed the sensitivity of the AlN/SiC Schottky diode sensor depending on the annealing temperature. AlN/4H-SiC Schottky diodes were fabricated by depositing aluminum nitride (AlN) thin film on 4H/SiC by radio frequency sputtering. The forward bias electrical characteristics were determined under DC bias (in the voltage range of 0–1.5 V). The ideality factor, barrier height, and sensitivity were derived through current–voltage–temperature (I–V–T) measurements in the temperature range of 300–500 K. The sensitivity of the AlN/4H-SiC Schottky barrier diode ranged from 2.5–5.0 mV/K.

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Liu, Hai Rui, and Jun Sheng Yu. "Characterization of Metal-Semiconductor Schottky Diodes and Application on THz Detection." Advanced Materials Research 683 (April 2013): 729–32. http://dx.doi.org/10.4028/www.scientific.net/amr.683.729.

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This paper presents a kind of air-bridged GaAs Schottky diodes which offer ultra low parasitic capacitance and series resistance in millimeter and THz wavelength. The Schottky barrier diodes have several advantages when used as millimeter wave and terahertz video, or power detectors. These include their fast time response, room temperature operation, simple structure and low cost. This paper describes the characterization of the metal-semiconductor Schottky diodes including principle, diode structure, non-linear voltage-current characteristic and signal-rectifying performance. For application, a quasi-optical THz detector was made by using the proposed Schottky diodes. It utilized a hyper hemispherical silicon lens to coupleand THz radiation to the diodes by integrating on a broadband planar bow-tie antenna. The measurement results of the Schottky diode based detector show a good room temperature performance.

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Polyntsev, Egor, Evgeny Erofeev, and Igor Yunusov. "The Influence of Design on Electrical Performance of AlGaN/GaN Lateral Schottky Barrier Diodes for Energy-Efficient Power Applications." Electronics 10, no. 22 (November 15, 2021): 2802. http://dx.doi.org/10.3390/electronics10222802.

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In this paper, lateral AlGaN/GaN Schottky barrier diodes are investigated in terms of anode construction and diode structure. An original GaN Schottky diode manufacturing-process flow was developed. A set of experiments was carried out to verify dependences between electrical parameters of the diode, such as reverse and forward currents, ON-state voltage, forward voltage and capacitance, anode-to-cathode distance, length of field plate, anode length, Schottky contact material, subanode recess depth, and epitaxial structure type. It was found that diodes of SiN/Al0.23Ga0.77N/GaN epi structure with Ni-based anodes demonstrated two orders of magnitude lower reverse currents than diodes with GaN/Al0.25Ga0.75N/GaN epitaxial structure. Diodes with Ni-based anodes demonstrated lower VON and higher IF compared with diodes with Pt-based anodes. As a result of these investigations, an optimal set of parameters was selected, providing the following electrical characteristics: VON = 0.6 (at IF = 1 mA/mm), forward voltage of the diode VF = 1.6 V (at IF = 100 mA/mm), maximum reverse voltage VR = 300 V, reverse leakage current IR = 0.04 μA/mm (at VR = −200 V), and total capacitance C = 3.6 pF/mm (at f = 1 MHz and 0 V DC bias). Obtained electrical characteristics of the lateral Schottky barrier diode demonstrate great potential for use in energy-efficient power applications, such as 5G multiband and multistandard wireless base stations.

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Hamada, Toshiyuki, Ikuo Nanno, Norio Ishikura, Masayuki Fujii, and Shinichiro Oke. "Breakdown Characteristics of Schottky Barrier Diodes Used as Bypass Diodes in Photovoltaic Modules under Lightning Surges." Energies 16, no. 23 (November 27, 2023): 7792. http://dx.doi.org/10.3390/en16237792.

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Damage to photovoltaic power-generation systems by lightning causes the failure of bypass diodes (BPDs) in solar cell modules. Bypass diodes damaged by lightning experience high-resistance open- or short-circuit failures. When a bypass diode experiences short-circuit failure due to indirect lightning, the damage may not be immediately visible. When solar radiation is subsequently received, the current circulating in the closed circuit formed by the cell string and short-circuited bypass diode flows, resulting in overheating and burnout of the short-circuited bypass diode. The authors’ research group previously reported that when a bypass diode fails within a range of approximately 10−1 Ω to 10 Ω, the heat generated by the failed bypass diode is high, posing the risk of burnout. However, the detailed failure characteristics of the bypass diode that fail because of indirect lightning surges are not clear. In this study, we performed indirect lightning fracture tests and clarified the dielectric breakdown characteristics of Schottky barrier diodes (SBDs) contained in the bypass diodes of photovoltaic solar cell modules, which are subjected to indirect lightning surges. Furthermore, we attempted to determine the conditions of indirect lightning that resulted in a higher risk of heat and ignition. As a result, short-circuit failures occurred in all the Schottky barrier diodes that were destroyed in the forward or reverse direction because of the indirect lightning surges. Moreover, the fault resistance decreased as the indirect lightning surge charge increased. These results indicate that the risks of heat generation and burnout increase when the Schottky barrier diode fails with a relatively low electric charge from an indirect lightning surge. In addition, we observed that for a forward breakdown of the Schottky barrier diode, the range of the indirect lightning surge that results in a fault condition with a higher risk of heat generation and burnout is wider than that for a reverse breakdown.

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Paosawatyanyong, Boonchoat, K. Honglertsakul, and D. K. Reinhard. "DLC-Film Schottky Barrier Diodes." Solid State Phenomena 107 (October 2005): 75–80. http://dx.doi.org/10.4028/www.scientific.net/ssp.107.75.

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A microwave plasma reactor (MPR) is constructed as a facility for the plasma assisted chemical vapor deposition (PACVD) process. The reactor is a mode-adjustable resonance cavity of cylindrical shape. A 2.45 GHz microwave generator is used to ignite the plasma inside the lengthadjustable cavity. The diamond-like carbon (DLC) thin film depositions onto the silicon substrates are carried out using H2–CH4 discharge. The Schottky barrier diodes (SBD) are then formed on to the DLC films. The responses of DLC-SBD to DC and time varying signals have been studied as a function of frequency. The frequency dependent response results are compared to the computer models, which includes as input parameters the bulk series resistance, the capacitance associated with the bulk material between the space-charge layer and the ohmic contact, the space-charge layer capacitance, and the diode dynamic resistance.

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Zhou, Shi Yuan, Kai Zhang, Dinguo Xiao, Chun Guang Xu, and Bo Yang. "Application of Silicon Carbide Diode in Ultrasound High Voltage Pulse Protection Circuit." Applied Mechanics and Materials 290 (February 2013): 115–19. http://dx.doi.org/10.4028/www.scientific.net/amm.290.115.

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SiC diode (Silicon Carbide Diode) is a newly commercial available Schottky barrier diode with zero reverse-recovery-time, which is a perfect candidate for fabricating high voltage pulse protection circuit in ultrasonic transceiver system. With SiC diode’s high performance, the circuit can deliver 400 volts or higher voltage protection level, which is not an easy job for other kind of diodes. In this article, the theory of diode-bridge protection circuit is briefly discussed, and a SiC diode-bridge protection circuit was fabricated, and some experiments has been done to verify the feasibility of using SiC diodes in diode-bridge protection circuit.

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Ozdemir, Ahmet Faruk, Adnan Calik, Guven Cankaya, Osman Sahin, and Nazim Ucar. "Effect of Indentation on I-V Characteristics of Au/n-GaAs Schottky Barrier Diodes." Zeitschrift für Naturforschung A 63, no. 3-4 (April 1, 2008): 199–202. http://dx.doi.org/10.1515/zna-2008-3-414.

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Au/n-GaAs Schottky barrier diodes (SBDs) have been fabricated. The effect of indentation on Schottky diode parameters such as Schottky barrier height (φb) and ideality factor (n) was studied by current-voltage (I-V) measurements. The method used for indentation was the Vickers microhardness test at room temperature. The experimental results showed that the I-V characteristics move to lower currents due to an increase of φb with increasing indentation weight, while contacts showed a nonideal diode behaviour.

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Strel’chuk, A. M., and E. V. Kalinina. "Schottky diodes based on 4H-SiC epitaxial layers." Journal of Physics: Conference Series 2103, no. 1 (November 1, 2021): 012235. http://dx.doi.org/10.1088/1742-6596/2103/1/012235.

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Abstract Forward and reverse current-voltage (IV) characteristics of Cr-SiC (4H) Schottky diodes based on epitaxial layers with doping (1-3)· 1015 cm-3 were studied in the temperature range of 300-550 K. It is shown that in many cases the IV characteristics are close to ideal, but a significant spread of the forward IV characteristics of diodes manufactured in the same way on the same epitaxial layer was found, probably due to the spread of the Schottky barrier heights reaching 0.3 eV. Heating of the diode, as well as packaging, can also change the Schottky barrier height. An alternative explanation suggests the presence of a powerful shunt.

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Saha, Sudipto, Lingyu Meng, Zixuan Feng, A. F. M. Anhar Uddin Bhuiyan, Hongping Zhao, and Uttam Singisetti. "Schottky diode characteristics on high-growth rate LPCVD β-Ga₂O₃ films on (010) and (001) Ga₂O₃ substrates." Applied Physics Letters 120, no. 12 (March 21, 2022): 122106. http://dx.doi.org/10.1063/5.0083659.

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High crystalline quality thick β-Ga2O3 drift layers are essential for multi-kV vertical power devices. Low-pressure chemical vapor deposition (LPCVD) is suitable for achieving high growth rates. This paper presents a systematic study of the Schottky barrier diodes fabricated on four different Si-doped homoepitaxial β-Ga2O3 thin films grown on Sn-doped (010) and (001) β-Ga2O3 substrates by LPCVD with a fast growth rate varying from 13 to 21 μm/h. A higher temperature growth results in the highest reported growth rate to date. Room temperature current density–voltage data for different Schottky diodes are presented, and diode characteristics, such as ideality factor, barrier height, specific on-resistance, and breakdown voltage are studied. Temperature dependence (25–250 °C) of the ideality factor, barrier height, and specific on-resistance is also analyzed from the J–V–T characteristics of the fabricated Schottky diodes.

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Lu, W., K. L. Pey, N. Singh, K. C. Leong, Q. Liu, C. L. Gan, G. Q. Lo, D. L. Kwong, and C. S. Tan. "Effect of Nickel Silicide Induced Dopant Segregation on Vertical Silicon Nanowire Diode Performance." MRS Proceedings 1439 (2012): 89–94. http://dx.doi.org/10.1557/opl.2012.845.

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ABSTRACTIn this work, Dopant Segregated Schottky Barrier (DSSB) and Schottky Barrier (SB) vertical silicon nanowire (VSiNW) diodes were fabricated on p-type Si substrate using CMOS-compatible processes to investigate the effects of segregated dopants at the silicide/silicon interface and different annealing processes on nickel silicide formation in DSSB VSiNW diodes. With segregated dopants at the silicide/silicon interface, VSiNW diodes showed higher on-current, due to an enhanced carrier tunneling, and much lower leakage current. This can be attributed to the altered energy bands caused by the accumulated Arsenic dopants at the interface. Moreover, DSSB VSiNW diodes also gave ideality factor much closer to unity and exhibited lower electron SBH (ΦBn) than SB VSiNW diodes. This proved that interfacial accumulated dopants could impede the inhomogeneous nature of the Schottky diodes and simultaneously, minimize the effect of Fermi level pinning and ionization of surface defect states. Comparing the impact of different silicide formation annealing using DSSB VSiNW diodes, the 2-step anneal process reduces the silicide intrusion length within the SiNW by ~ 5X and the silicide interface was smooth along the (100) direction. Furthermore, the 2-step DSSB VSiNW diode also exhibited much lower leakage current and an ideality factor much closer to unity, as compared to 1-step DSSB VSiNW diode.

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Pérez, R., Narcis Mestres, Dominique Tournier, Xavier Jordá, Phillippe Godignon, and Miquel Vellvehi. "Temperature Dependence of 4H-SiC JBS and Schottky Diodes after High Temperature Treatment of Contact Metal." Materials Science Forum 483-485 (May 2005): 945–48. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.945.

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In this work we demonstrate performant characteristics of 1.2KV Schottky, Junction Barrier Schottky (JBS) and implanted PN diodes processed on the same 4H-SiC wafer. A bi-layer Ni/Ti scheme for the contact metallisation submitted to high temperature rapid thermal anneals is proved to form good ohmic contact on p+ implanted areas while maintaining good Schottky characteristics on lightly doped n-type regions. I-V characteristics have been evaluated from room temperature up to 560K. At room temperature, Schottky diodes have slightly better specific onresistance, but when working temperature is increased, the JBS diode exhibits better characteristics due to the temperature dependent activation of bipolar current injection from the p+ grid. From reverse measurements, the JBS diodes showed lower leakage current and higher breakdown voltages in comparison to that of the Schottky diodes in the whole range of temperatures.

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Shin, Wongil, Gyuho Myeong, Kyunghwan Sung, Seungho Kim, Hongsik Lim, Boram Kim, Taehyeok Jin, et al. "Steep-slope Schottky diode with cold metal source." Applied Physics Letters 120, no. 24 (June 13, 2022): 243506. http://dx.doi.org/10.1063/5.0097408.

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Today's circuit technology requires low-power transistors and diodes to extend Moore's law. While research has been focused on reducing power consumption of transistors, low-power diodes have not been widely studied. Here, we report a low-power, thus steep-slope Schottky diode, with a “cold metal” source. The Schottky barrier between metal electrode and bulk MoS2 enabled the diode behavior, and the steep-slope diode IV curve originated from the change in the density of states of a graphite (cold metal) source with a bias voltage. The MoS2 Schottky diode with a cold metal exhibits an ideality factor (η) < 1 for more than four decades of drain current with a sizable rectifying ratio (108). The realization of a steep-slope Schottky diode paves the way to the improvement in low-power circuit technology.

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Tan, C. K., Azlan Abdul Aziz, F. K. Yam, C. W. Lim, Hassan Zainuriah, and A. Y. Hudeish. "Effect of Thermal Treatment for Pd and PdSi Schottky Contacts on p-GaN." Materials Science Forum 517 (June 2006): 242–46. http://dx.doi.org/10.4028/www.scientific.net/msf.517.242.

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Pd Schottky diode exhibited stable rectifying behavior up to 500°C for 35 minutes in sequential annealing; with the Schottky barrier heights (SBHs), ΦB (I-V) of 0.6-0.7eV with the leakage current (LC) of 20 A at -5V. With the same range of SBHs, PdSi diodes were stable up to 500°C for 5 minutes with the LC of 0.182mA at -5V. The electrical characteristics obtained in this study are also compared with those obtained for Pd and PdSi Schottky diodes on p-GaN.

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Aketa, Masatoshi, Yuta Yokotsuji, Mineo Miura, and Takashi Nakamura. "4H-SiC Trench Structure Schottky Diodes." Materials Science Forum 717-720 (May 2012): 933–36. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.933.

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This paper presents three different structures of Schottky diodes that were fabricated with low Schottky barrier heights. To reduce the forward voltage drop, the introduction of a lower Schttoky barrier is necessary. One of key issues associated with diodes having a low Schottky barrier height and a planar structure is an excessively high leakage current. By introducing the novel trench structure, the leakage current was reduced to a reasonable level. Furthermore it was confirmed that they have minimal switching time during turn-off and high avalanche capability. Thus trench structure Schottky diodes are able to reduce not only switching losses but also conductive losses and demonstrate sufficient robustness.

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Bernat, Robert, Tihomir Knežević, Vladimir Radulović, Luka Snoj, Takahiro Makino, Takeshi Ohshima, and Ivana Capan. "Radiation Response of Large-Area 4H-SiC Schottky Barrier Diodes." Materials 16, no. 6 (March 9, 2023): 2202. http://dx.doi.org/10.3390/ma16062202.

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We report on the effects of large-area 4H-SiC Schottky barrier diodes on the radiation response to ionizing particles. Two different diode areas were compared: 1 mm × 1 mm and 5 mm × 5 mm. 6LiF and 10B4C films, which were placed on top of the diodes, were used as thermal neutron converters. We achieved a thermal neutron efficiency of 5.02% with a 6LiF thermal neutron converter, which is one of the highest efficiencies reported to date. In addition, a temperature-dependent radiation response to alpha particles was presented. Neutron irradiations were performed in a JSI TRIGA dry chamber and an Am-241 wide-area alpha source was used for testing the alpha response of the 4H-SiC Schottky barrier diodes.

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Higashiwaki, Masataka, Kohei Sasaki, Hisashi Murakami, Yoshinao Kumagai, and Akito Kuramata. "Gallium Oxide Schottky Barrier Diodes." IEEJ Transactions on Electronics, Information and Systems 136, no. 4 (2016): 479–83. http://dx.doi.org/10.1541/ieejeiss.136.479.

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Sabui, Gourab, Vitaly Z. Zubialevich, Mary White, Pietro Pampili, Peter J. Parbrook, Mathew McLaren, Miryam Arredondo-Arechavala, and Z. John Shen. "GaN Nanowire Schottky Barrier Diodes." IEEE Transactions on Electron Devices 64, no. 5 (May 2017): 2283–90. http://dx.doi.org/10.1109/ted.2017.2679727.

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Yim, Chanyoung, Niall McEvoy, Ehsan Rezvani, Shishir Kumar, and Georg S. Duesberg. "Carbon-Silicon Schottky Barrier Diodes." Small 8, no. 9 (March 5, 2012): 1360–64. http://dx.doi.org/10.1002/smll.201101996.

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Klyuev, Alexey V., Arkady V. Yakimov, and Irene S. Zhukova. "1/f Noise in Ti–Au/n-Type GaAs Schottky Barrier Diodes." Fluctuation and Noise Letters 14, no. 03 (June 29, 2015): 1550029. http://dx.doi.org/10.1142/s0219477515500297.

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We have studied the forward current–voltage (I–V) characteristics of Ti–Au /n-type GaAs Schottky barrier diodes. However, we found some anomalies in I–V characteristics. Hence, we have considered a model that incorporates thermionic emission, thermionic-field emission and leakage components. Leakage component is linear and visible at rather small currents. The anomalies observed in the diode parameters were effectively construed in terms of the contribution of these multiple charge transport mechanisms across the interface of the diodes. It is shown that thermionic-field emission and leakage are the sources of low-frequency (1/f) noise in such type of diodes. Various Schottky diode parameters were also extracted from the I–V characteristics and current dependence of spectrum of 1/f voltage noise.

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Mohd Saman, Rahimah, Sharaifah Kamariah Wan Sabli, Mohd Rofei Mat Hussin, Muhammad Hilmi Othman, Muhammad Aniq Shazni Mohammad Haniff, and Mohd Ismahadi Syono. "High Voltage Graphene Nanowall Trench MOS Barrier Schottky Diode Characterization for High Temperature Applications." Applied Sciences 9, no. 8 (April 17, 2019): 1587. http://dx.doi.org/10.3390/app9081587.

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Graphene’s superior electronic and thermal properties have gained extensive attention from research and industrial sectors to study and develop the material for various applications such as in sensors and diodes. In this paper, the characteristics and performance of carbon-based nanostructure applied on a Trench Metal Oxide Semiconductor MOS barrier Schottky (TMBS) diode were investigated for high temperature application. The structure used for this study was silicon substrate with a trench and filled trench with gate oxide and polysilicon gate. A graphene nanowall (GNW) or carbon nanowall (CNW), as a barrier layer, was grown using the plasma enhanced chemical vapor deposition (PECVD) method. The TMBS device was then tested to determine the leakage current at 60 V under various temperature settings and compared against a conventional metal-based TMBS device using TiSi2 as a Schottky barrier layer. Current-voltage (I-V) measurement data were analyzed to obtain the Schottky barrier height, ideality factor, and series resistance (Rs) values. From I-V measurement, leakage current measured at 60 V and at 423 K of the GNW-TMBS and TiSi2-TMBS diodes were 0.0685 mA and above 10 mA, respectively, indicating that the GNW-TMBS diode has high operating temperature advantages. The Schottky barrier height, ideality factor, and series resistance based on dV/dln(J) vs. J for the GNW were calculated to be 0.703 eV, 1.64, and 35 ohm respectively.

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Tumakha, Sergey P., L. M. Porter, D. J. Ewing, Qamar-ul Wahab, X. Y. Ma, Tangali S. Sudarshan, and Leonard J. Brillson. "Nanoscale Deep Level Defect Correlation with Schottky Barriers in 4H-SiC/Metal Diodes." Materials Science Forum 527-529 (October 2006): 907–10. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.907.

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We have used depth-resolved cathodoluminescence spectroscopy (DRCLS) to correlate subsurface deep level emissions and double barrier current-voltage (I-V) characteristics across an array of Ni/4H-SiC diodes on the same epitaxial wafer. These results demonstrate not only a correspondence between these optical features and measured barrier heights, but they also suggest that such states may limit the range of SB heights in general. DRCLS of near-ideal diodes show a broad 2.45 eV emission at common to all diode areas and associated with either impurities or inclusions. Strongly non-ideal diodes exhibit additional defect emissions at 2.2 and 2.65 eV. On the other hand, there is no correlation between the appearance of morphological defects observed by polarized light microscopy or X-ray topography and the presence of double barrier characteristics. The DRCLS observations of defect level transitions that correlate with non-ideal Schottky barriers suggest that these sub-surface defect features can be used to predict Schottky barrier behavior.

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Zhang, Teng, Christophe Raynaud, and Dominique Planson. "Multi-Barrier Height Characterization and DLTS Study on Ti/W 4H-SiC Schottky Diode." Materials Science Forum 963 (July 2019): 576–79. http://dx.doi.org/10.4028/www.scientific.net/msf.963.576.

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Schottky barrier height (SBH) has been characterized on 4H-SiC Schottky diodes with metal contact of Ti/W by Current-Voltage (I-V) and Capacitance-Voltage (C-V) measurements between 80 K and 400 K. Multi-barrier has been recognized and calculated according to different models. No clear difference has been found between single barrier diode and diode with multi-barrier from DLTS tests. Evolution on the I-V characteristics has been observed after high temperature annealing. The effect of annealing at room temperature (RT) and high temperature DLTS scan (stress under high temperature) have also been studied on both static characteristics and DLTS results.

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Zaman, Muhammad Yousuf, Denis Perrone, Sergio Ferrero, Luciano Scaltrito, and Marco Naretto. "Barrier Inhomogeneities of a Medium Size Mo/4H-SiC Schottky Diode." Materials Science Forum 711 (January 2012): 188–92. http://dx.doi.org/10.4028/www.scientific.net/msf.711.188.

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Forward current-voltage characteristics of a medium sized (3.05mm2)Mo/4H-SiC (molyb-denum on silicon carbide) Schottky diode|fabricated for high power applications | are analysedwithin a temperature range of 125-450 K. Accurate theoretical modeling is carried out using Tung'smodel in which it is considered that numerous low barrier nanometer size patches, present in uniformhigh barrier, are responsible for the inhomogeneities in the Schottky barrier of SiC-based electronicdevices. A significant difference is observed between the effective area involved in the current trans-port and the geometric area of the Schottky contact along with a dependence of the ideality factor andhe barrier height on temperature. The obtained values of uniform Schottky barrier and Richardson'sconstant are seen to be in accordance with previous works. It is concluded that the above mentionedmodel can be used to describe the electrical behaviour of Mo/4H-SiC Schottky diodes.

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29

Машков, P. Mashkov, Кастрюлев, A. Kastryulev, Харченко, and M. Kharchenko. "THE APPLICATION OF SOME STRUCTURAL AND TECHNOLOGICAL SOLUTIONS IN DEVELOPMENT OF SCHOTTKY DIODES WITH IMPROVED FUNCTIONAL CHARACTERISTICS." Modeling of systems and processes 8, no. 1 (July 2, 2015): 18–21. http://dx.doi.org/10.12737/12015.

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The paper presents some of the design and technological solutions that helped to improve the performance of the Schottky diodes, as well as radically improve their resistance to ionizing radiation. To check the calculations made by the model samples were prepared with a Schottky barrier diode (maximum permissible density of the average forward current - 100 A / cm2, the maximum reverse voltage - 150 V). The studies determined the optimal design of the working part of a Schottky diode, advanced design of the peripheral field-optimized technology for creating the metal-semiconductor interface. During tests carried diodes obtained prototypes it was found that the functional characteristics, as well as resistance to ionizing radiation, were at or better stated requirements

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30

Hirokazu, Fujiwara, T. Katsuno, Tsuyoshi Ishikawa, H. Naruoka, Masaki Konishi, T. Endo, Y. Watanabe, et al. "Impact of Surface Morphology above Threading Dislocations on Leakage Current in 4H-SiC Diodes." Materials Science Forum 717-720 (May 2012): 911–16. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.911.

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The impact of threading dislocation density on the leakage current of reverse IV characteristics in 1.2 kV Schottky barrier diodes (SBDs), junction barrier Schottky diodes (JBSDs), and PN junction diodes (PNDs) was investigated. The leakage current density and threading dislocation density have different positive correlations in each type of diode. For example, the correlation in SBDs is strong, but weak in PNDs. The threading dislocations were found to be in the same location as the current leakage points in the SBDs, but not in the PNDs. Nano-scale inverted cone pits were observed at the Schottky junction interface in SBDs, and it was found that leakage current increases in these diodes due to the concentration of electric fields at the peaks of the pits. These nano-scale pits were also observed directly above threading dislocations. In addition, this study succeeded in reducing the leakage current variation of 200 A-class JBSDs and SBDs by eliminating the nano-scale pits above the threading dislocations. As a result, a theoretical straight-line waveform was achieved.

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31

Kinoshita, Akimasa, Takasumi Ohyanagi, Tsutomu Yatsuo, Kenji Fukuda, Hajime Okumura, and Kazuo Arai. "Fabrication of 1.2kV, 100A, 4H-SiC(0001) and (000-1) Junction Barrier Schottky Diodes with Almost Same Schottky Barrier Height." Materials Science Forum 645-648 (April 2010): 893–96. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.893.

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It is known that a Schottky barrier height (b) of metal/C-face 4H-SiC Schottky barrier diode (SBD) differ from b of metal/Si-face 4H-SiC SBD. Furthermore, b of metal/4H-SiC SBD varies with annealing temperature. We fabricate 0.231mm2 SBD with Ti/SiC interface using Si-face and C-face 4H-SiC. These SBDs are annealed at several temperatures after a formation of the Ti/SiC interface. As a result, b of Ti/C-face 4H-SiC interface annealed at 400 oC is nearly equal to b of Ti/Si-face 4H-SiC interface annealed at 500 oC and the n-values of these SBDs are nearly equal to the ideal value (unity). Using that annealing condition, we fabricated 25mm2 junction barrier Schottky (JBS) diodes with Ti/SiC interface on Si-face and C-face 4H-SiC epitaxial substrate. b of Si-face and C-face JBS diodes are 1.26eV and 1.24eV, respectively. The leakage currents for both Si-face and C-face JBS diodes are less than 1mA/cm2. The current of 100A is obtained at the forward bias voltage of 1.95V and 2.16V for the Si-face JBS and the C-face JBS.

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32

Pristavu, Gheorghe, Gheorghe Brezeanu, Marian Badila, Florin Draghici, Razvan Pascu, and Florea Craciunoiu. "An Investigation of SiC Schottky Contact Barrier Inhomogeneity for Temperature Sensing Applications." Materials Science Forum 858 (May 2016): 577–81. http://dx.doi.org/10.4028/www.scientific.net/msf.858.577.

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This paper proposes a method of characterizing silicon carbide Schottky diodes with inhomogeneous contacts in temperature sensing applications. Using the energy activation technique, temperature intervals where the effective barrier height is constant are determined. Unlike the conventional barrier which increases with temperature for inhomogeneous diodes, the effective barrier has physical meaning and can be used for sensor performance evaluation. The utility of effective barrier analysis is confirmed on fabricated Ni/4H-SiC Schottky diodes with different annealing conditions and different degrees of barrier non-uniformity. The good agreement between calculated and experimental data proves the suitable behavior of inhomogeneous diodes as sensors for different temperature ranges.

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33

Kudou, Chiaki, Hirokuni Asamizu, Kentaro Tamura, Johji Nishio, Keiko Masumoto, Kazutoshi Kojima, and Toshiyuki Ohno. "Influence of Epi-Layer Growth Pits on SiC Device Characteristics." Materials Science Forum 821-823 (June 2015): 177–80. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.177.

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Homoepitaxial layers with different growth pit density were grown on 4H-SiC Si-face substrates by changing C/Si ratio, and the influence of the growth pit density on Schottky barrier diodes and metal-oxide-semiconductor capacitors were investigated. Even though there were many growth pits on the epi-layer, growth pit density did not affect the leakage current of Schottky barrier diodes and lifetime of constant current time dependent dielectric breakdown. By analyzing the growth pit shape, the aspect ratio of the growth pit was considered to be the key factor to the leakage current of the Schottky barrier diodes and the lifetime of metal-oxide-semiconductor capacitors.

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34

CHUAH, L. S., Z. HASSAN, H. ABU HASSAN, F. K. YAM, C. W. CHIN, and S. M. THAHAB. "BARRIER HEIGHT ENHANCED GaN SCHOTTKY DIODES USING A THIN AlN SURFACE LAYER." International Journal of Modern Physics B 22, no. 29 (November 20, 2008): 5167–73. http://dx.doi.org/10.1142/s0217979208048711.

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Gallium nitride (GaN) is a highly promising wide band gap semiconductor with applications in high power electronic and optoelectronic devices. Thin films of GaN are most commonly grown in the hexagonal wurtzite structure on sapphire substrates. Growth of GaN onto silicon substrates offers a very attractive opportunity to incorporate GaN devices onto silicon-based integrated circuits. Although direct epitaxial growth of GaN films on Si substrates is a difficult task (mainly due to the 17% lattice mismatch present), substantial progress in the crystal quality can be achieved using a buffer layer. A full characterization of the quality of the material needs to be assessed by a combination of different techniques. In this work, a thin AlN cap layer of 50 nm was incorporated in GaN Schottky diode to enhance the effective Schottky barrier height and reduces the dark current. A barrier height of 0.52 eV for normal GaN Schottky diode was increased to the effective barrier height of 0.63 eV. The resulting Schottky diodes show a dark current of as low as 6.3×10-5 A at 5 V bias, which is about two orders of magnitude lower than that of normal GaN (5.2×10-3 A at 5 V bias) Schottky diode.

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35

Min, Seong-Ji, Myeong Cheol Shin, Ngoc Thi Nguyen, Jong-Min Oh, and Sang-Mo Koo. "High-Performance Temperature Sensors Based on Dual 4H-SiC JBS and SBD Devices." Materials 13, no. 2 (January 17, 2020): 445. http://dx.doi.org/10.3390/ma13020445.

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Schottky diode-based temperature sensors are the most common commercially available temperature sensors, and they are attracting increasing interest owing to their higher Schottky barrier height compared to their silicon counterparts. Therefore, this paper presents a comparison of the thermal sensitivity variation trend in temperature sensors, based on dual 4H-SiC junction barrier Schottky (JBS) diodes and Schottky barrier diodes (SBDs). The forward bias current–voltage characteristics were acquired by sweeping the DC bias voltage from 0 to 3 V. The dual JBS sensor exhibited a higher peak sensitivity (4.32 mV/K) than the sensitivity exhibited by the SBD sensor (2.85 mV/K), at temperatures ranging from 298 to 573 K. The JBS sensor exhibited a higher ideality factor and barrier height owing to the p–n junction in JBS devices. The developed sensor showed good repeatability, maintaining a stable output over several cycles of measurements on different days. It is worth noting that the ideality factor and barrier height influenced the forward biased voltage, leading to a higher sensitivity for the JBS device compared to the SBD device. This allows the JBS device to be suitably integrated with SiC power management and control circuitry to create a sensing module capable of working at high temperatures.

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36

Alathbah, Moath. "Development and Modelling of Gallium Nitride Based Lateral Schottky Barrier Diodes with Anode Recesses for mmWave and THz Applications." Micromachines 14, no. 1 (December 20, 2022): 2. http://dx.doi.org/10.3390/mi14010002.

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This paper presents novel multi-channel RF lateral Schottky-barrier diodes (SBDs) based on AlGaN/GaN on low resistivity (LR) (σ = 0.02 Q·cm) silicon substrates. The developed technology offers a reduction of 37% in onset voltage, VON (from 1.34 to 0.84 V), and 36% in ON-resistance, RON (1.52 to 0.97 to Ω·mm), as a result of lowering the Schottky barrier height, Φn, when compared to conventional lateral SBDs. No compromise in reverse-breakdown voltage or reverse-bias leakage current performance was observed as both multi-channel and conventional technologies exhibited a VBV of (VBV > 30 V) and an IR of (IR < 38 μA/mm), respectively. Furthermore, a precise small-signal equivalent circuit model was developed and verified for frequencies up to 110 GHz. The fabricated devices exhibited cut-off frequencies of up to 0.6 THz, demonstrating the potential use of lateral AlGaN/GaN SBDs on LR silicon for high-efficiency, high-frequency integrated circuits’ applications. The paper begins with a brief outline of the basic Schottky-contact diode operation. A series resistance analysis of the diode studied in this project is discussed. The small signal equivalent circuit of the Schottky-contact diode is presented. The layout of the diodes studied is described, and their fabrication techniques are briefly mentioned. DC, RF, and low frequency C-V measurement techniques and measurements to characterize the diodes are outlined. Finally, results and discussions on the effects of multiple recesses under the Schottky-contact (anode) obtained from the I-V diode characteristics and C-V measurements, and the small signal equivalent circuit deduced from RF measurements for different diode configurations, are presented.

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37

Guo, Qianqian, Fei Lu, Qiulin Tan, Tianhao Zhou, Jijun Xiong, and Wendong Zhang. "Al2O3-Based a-IGZO Schottky Diodes for Temperature Sensing." Sensors 19, no. 2 (January 9, 2019): 224. http://dx.doi.org/10.3390/s19020224.

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High-temperature electronic devices and sensors that operate in harsh environments, especially high-temperature environments, have attracted widespread attention. An Al2O3 based a-IGZO (amorphous indium-gallium-zinc-oxide) Schottky diode sensor is proposed. The diodes are tested at 21–400 °C, and the design and fabrication process of the Schottky diodes and the testing methods are introduced. Herein, a series of factors influencing diode performance are studied to obtain the relationship between diode ideal factor n, the barrier height ФB, and temperature. The sensitivity of the diode sensors is 0.81 mV/°C, 1.37 mV/°C, and 1.59 mV/°C when the forward current density of the diode is 1 × 10−5 A/cm2, 1 × 10−4 A/cm2, and 1 × 10−3 A/cm2, respectively.

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38

Ohtsuka, Kenichi, Yoichiro Tarui, Tomokatsu Watanabe, Keiko Fujihira, and Yoshinori Matsuno. "Numerical Evaluation of Forward Voltage in SiC Pin Diode with Non-Ohmic Current Component in Contact to p-Type Layer." Materials Science Forum 600-603 (September 2008): 1035–38. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.1035.

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Forward voltage of SiC pin diodes is evaluated by device simulation, where a p-type contact is described by Schottky barrier to a p-type surface region. The contact resistance is calculated from the comparison to I-V characteristic of Schottky structure to a p-SiC layer with a sufficiently low Schottky barrier height. Even in the relatively low contact resistance rc of 10-4 Wcm2, non-ohmic current component is observed in Schottky structure to p-SiC and the increase of forward voltage of pin diodes is fairly small. Forward voltage of pin diodes increases in the pin diodes with contact resistance rc over 10-4 Wcm2. The same behavior is also observed irrespective of a time constant of carriers, and doping concentration and thickness of a drift layer.

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39

Wong, Man Hoi. "A landscape of β-Ga₂O₃ Schottky power diodes." Journal of Semiconductors 44, no. 9 (September 1, 2023): 091605. http://dx.doi.org/10.1088/1674-4926/44/9/091605.

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Abstract β-Ga2O3 Schottky barrier diodes have undergone rapid progress in research and development for power electronic applications. This paper reviews state-of-the-art β-Ga2O3 rectifier technologies, including advanced diode architectures that have enabled lower reverse leakage current via the reduced-surface-field effect. Characteristic device properties including on-resistance, breakdown voltage, rectification ratio, dynamic switching, and nonideal effects are summarized for the different devices. Notable results on the high-temperature resilience of β-Ga2O3 Schottky diodes, together with the enabling thermal packaging solutions, are also presented.

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40

Ramadan, Rehab, and Raúl J. Martín-Palma. "Electrical Characterization of MIS Schottky Barrier Diodes Based on Nanostructured Porous Silicon and Silver Nanoparticles with Applications in Solar Cells." Energies 13, no. 9 (May 1, 2020): 2165. http://dx.doi.org/10.3390/en13092165.

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The accurate determination of the electrical properties of photovoltaic devices is of utmost importance to predict and optimize their overall optoelectronic performance. For example, the minority carrier lifetime and the carrier diffusion length have a strong relationship with the carrier recombination rate. Additionally, parasitic resistances have an important effect on the fill factor of a solar cell. Within this context, the alternating current (AC) and direct current (DC) electrical characteristics of Si-based metal–insulator–semiconductor (MIS) Schottky barrier diodes with the basic structure Al/Si/TiO2/NiCr were studied, aiming at using them as photovoltaic devices. The basic diode structure was modified by adding nanostructured porous silicon (nanoPS) layers and by infiltrating silver nanoparticles (AgNPs) into the nanoPS layers, leading to Al/Si+nanoPS/TiO2/NiCr and Al/Si+nanoPS+AgNPs/TiO2/NiCr structures, respectively. The AC electrical properties were studied using a combination of electrochemical impedance spectroscopy and Mott–Schottky analysis, while the DC electrical properties were determined from current–voltage measurements. From the experimental results, an AC equivalent circuit model was proposed for the three different MIS Schottky barrier diodes under study. Additionally, the most significant electrical parameters were calculated. The results show a remarkable improvement in the performance of the MIS Schottky barrier diodes upon the addition of hybrid nanoPS layers with embedded Ag nanoparticles, opening the way to their use as photovoltaic devices.

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41

Ueamanapong, Surada, Itsara Srithanachai, Budsara Nararug, Supakorn Janprapha, Ai Lada Suwanchatree, Surasak Niemcharoen, Nipapan Klunngien, and Amporn Poyai. "Influence of Platinum on Electrical Propertires of Silicon Schottky Diode." Advanced Materials Research 811 (September 2013): 192–95. http://dx.doi.org/10.4028/www.scientific.net/amr.811.192.

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The purpose of the paper is present the new result of electrical properties of Pt-doped silicon Schottky diodes that are fabricated by using CMOS technology. The results show the comparison of electrical properties namely current-voltage and capacitance characteristics between undoped and Pt-doped Schottky diode. The current characteristics of Pt-doped diode are decreased about 2 to 3 orders in term of reverse bias. As well as in case of forward bias, the current is slightly decreased. Schottky barrier height after Pt doping was increased from 0.84 eV to 0.86 eV. The built-in voltage of Pt-doped diodes was increased from 0.38 V to 0.42 V. The C-V characteristics after Pt doping is decreased about 5 pF. The change of electrical properties are caused by Pt because Pt atoms in silicon can occupy interstitial sites and change the trapping center. This paper will study and analyze the effect of Pt atom in silicon bulk of Schottky diode.

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42

Li, Qingling, Tao Zhu, Jialing Li, and Hailiang Yan. "Optimization of Schottky-contact process on 4H-SiC Junction Barrier Schottky (JBS) Diodes." Journal of Physics: Conference Series 2083, no. 2 (November 1, 2021): 022090. http://dx.doi.org/10.1088/1742-6596/2083/2/022090.

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Abstract SiC Junction Barrier Schottky (JBS) Rectifier is a kind of unipolar power diode with low threshold voltage and high reverse blocking voltage. And the Schottky barrier Φ BN is a main technology parameter, which could greatly affect the forward conduction power and reverse leakage current in the JBS rectifiers. Therefore, it is necessary to balance the influence of Φ BN on the electrical characteristics of JBS rectifiers. In this paper, physical properties at the metal-semiconductor at the Schottky-contact could be optimized by the improvement of Schottky-contact process. And this optimization could significantly decrease Φ BN to reduce the on-state voltage drop V F and minimize negative impact on its reverse characteristics. After the completion of Silicon carbide JBS diodes, the static parameter electrical test was carried out on the wafer by using Keysight B1505A Power Device Analyzer/Curve Tracer. The test results show that the Schottky barrier height Φ BN of JBS Schottky rectifier manufactured by the modified Schottky foundation technology decreased from 1.19eV to 0.99eV and I R increased from 1.08μA to 3.73μA (reverse blocking voltage V R=1200V). It indicated that the power consumption of Schottky barrier junction in JBS rectifiers could be significantly reduced by about 25%, and I R could effectively be limited to less than 10μA.

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43

Perrone, Denis, Marco Naretto, Sergio Ferrero, Luciano Scaltrito, and C. Fabrizio Pirri. "4H-SiC Schottky Barrier Diodes Using Mo-, Ti- and Ni-Based Contacts." Materials Science Forum 615-617 (March 2009): 647–50. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.647.

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We have studied different Schottky and ohmic contacts on 4H-SiC with the aim to obtain Schottky barrier diodes (SBDs) capable to operate at high temperatures, frequencies and power densities for long periods of time, and showing low power losses. The control of the Schottky barrier plays an important role in minimizing the power loss of a SBD, and the metal-semiconductor interface properties strongly affect the overall performances of such a device. Schottky contacts were deposited using Ni, Ti, Ti/Al, Mo and Mo/Al layers, and the annealing treatments have been performed up to 600 °C using a rapid thermal annealing process (RTA). Ohmic contacts have been deposited on the wafer backside using Ti/Al or Ti/Ni/Ag layers. The Schottky diodes have been characterized by means of standard current-voltage (I-V) and capacitance-voltage (C-V) techniques. Schottky diodes with Mo and Mo/Al barriers show a lower barrier height and better overall performances in forward polarization when compared to the Ti- and Ni-based contacts.

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44

Matys, Maciej, Kazuki Kitagawa, Tetsuo Narita, Tsutomu Uesugi, Jun Suda, and Tetsu Kachi. "Mg-implanted vertical GaN junction barrier Schottky rectifiers with low on resistance, low turn-on voltage, and nearly ideal nondestructive breakdown voltage." Applied Physics Letters 121, no. 20 (November 14, 2022): 203507. http://dx.doi.org/10.1063/5.0106321.

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Vertical GaN junction barrier Schottky (JBS) diodes with superior electrical characteristics and nondestructive breakdown were realized using selective-area p-type doping via Mg ion implantation and subsequent ultra-high-pressure annealing. Mg-ion implantation was performed into a 10 μm thick Si-doped GaN drift layer grown on a free-standing n-type GaN substrate. We fabricated the JBS diodes with different n-type GaN channel widths Ln = 1 and 1.5 μm. The JBS diodes, depending on Ln, exhibited on-resistance ( RON) between 0.57 and 0.67 mΩ cm2, which is a record low value for vertical GaN Schottky barrier diodes (SBDs) and high breakdown (BV) between 660 and 675 V (84.4% of the ideal parallel plane BV). The obtained low RON of JBS diodes can be well explained in terms of the RON model, which includes n-type GaN channel resistance, spreading current effect, and substrate resistance. The reverse leakage current in JBS diodes was relatively low 103–104 times lower than in GaN SBDs. In addition, the JBS diode with lower Ln exhibited the leakage current significantly smaller (up to reverse bias 300 V) than in the JBS diode with large Ln, which was explained in terms of the reduced electric field near the Schottky interface. Furthermore, the JBS diodes showed a very high current density of 5.5 kA/cm2, a low turn-on voltage of 0.74 V, and no destruction against the rapid increase in the reverse current approximately by two orders of magnitude. This work demonstrated that GaN JBS diodes can be strong candidates for low loss power switching applications.

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45

Zhou, Yuhao, Qianshu Wu, Qi Zhang, Chengzhang Li, Jinwei Zhang, Zhenxing Liu, Ke Zhang, and Yang Liu. "Numerical analysis of the GaN trench MIS barrier Schottky diodes with high dielectric reliability and surge current capability." AIP Advances 12, no. 6 (June 1, 2022): 065117. http://dx.doi.org/10.1063/5.0098669.

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The commercialization of GaN-based Schottky barrier diodes in middle- and high- voltage applications still faces many challenges, in which the lack of an effective selective area p-type doping method is one of the main obstacles. This paper proposes novel vertical GaN-based Schottky diodes with trench MIS structure and an embedded p-GaN protection layer (junction-trench MIS barrier Schottky diodes, J-TMBS). The trench structure and lateral p-n junctions can be achieved by selectively etching the very thin p-GaN and then regrowing n-GaN. Therefore, the fabrication technology avoids the selective area p-type doping process, and the dry etching damage and poor sidewall regrowth interface issue, which are serious in GaN Merged pn/Schottky (MPS) diodes, can also be alleviated for the proposed J-TMBS. Compared with the optimized GaN trench MIS barrier Schottky (TMBS) diodes, the surge current capability and dielectric reliability of the proposed J-TMBS are significantly improved (the electric field of the dielectric layer and maximum lattice temperature under the surge test can be reduced by 448% and 202%, respectively). In addition, the specific on-resistance ( R on,sp) and breakdown voltage remain basically unchanged compared with TMBS. Compared with the optimized GaN MPS diodes, the proposed structure improves the specific on-resistance by 17.2% benefiting from the reduced area of the JFET region without degrading the reverse I–V characteristics and surge current capability. The proposed J-TMBS exhibits potential in practical high voltage (>600 V) application of GaN Schottky power diodes.

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46

Asllani, Besar, Maxime Berthou, Dominique Tournier, Pierre Brosselard, and Phillippe Godignon. "Modeling of Inhomogeneous 4H-SiC Schottky and JBS Diodes in a Wide Temperature Range." Materials Science Forum 858 (May 2016): 741–44. http://dx.doi.org/10.4028/www.scientific.net/msf.858.741.

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This paper presents a study of the Schottky barrier evolution on SBD and JBS diodes over a wide range of temperatures from 80 to 500 K. We show that inhomogeneities of the Schottky contact have a strong impact on the dependence of barrier characteristics with temperature, especially below 200 K. Analysis of the reverse bias current of such diodes at low temperature show that the barrier height depends on temperature but also on voltage.

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47

Kikuchi, Akira. "Barrier Height of Titanium Silicide Schottky Barrier Diodes." Japanese Journal of Applied Physics 25, Part 2, No. 11 (November 20, 1986): L894—L895. http://dx.doi.org/10.1143/jjap.25.l894.

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48

Hirokazu, Fujiwara, Masaki Konishi, T. Ohnishi, T. Nakamura, Kimimori Hamada, T. Katsuno, Y. Watanabe, et al. "Reverse Electrical Characteristics of 4H-SiC JBS Diodes Fabricated on In-House Substrate with Low Threading Dislocation Density." Materials Science Forum 679-680 (March 2011): 694–97. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.694.

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The impacts of threading dislocations, surface defects, donor concentration, and schottky Schottky barrier height on the reverse IV characteristic of silicon carbide (SiC) junction barrier schottky Schottky (JBS) diodes were investigated. The 100 A JBS diodes were fabricated on 4H-SiC 3-inch N-type wafers with two types of threading dislocation density. The typical densities are were 0.2×104 and 3.8×104 cm-2, respectively. The improvement of vIt was found that variations in the leakage current and the high yield of large area JBS diodes werecould be were obtained improved by using a wafer with a low threading dislocation density. In the range of low leakage current, the investigation shows showed a correlation between leakage current and threading dislocation density.

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Kang, In Ho, Wook Bahng, Sung Jae Joo, Sang Cheol Kim, and Nam Kyun Kim. "Post Annealing Etch Process for Improved Reverse Characteristics of 4H-SiC Diode." Materials Science Forum 615-617 (March 2009): 663–66. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.663.

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The effects of post annealing etch process on electrical performances of a 4H-SiC Schottky diodes without any edge termination were investigated. The post etch was carried out using various dry the dry etch techniques such as Inductively Coupled Plasma (ICP) and Neutral Beam Etch (NBE) in order to eliminate suspicious surface damages occurring during a high temperature ion activation process. The leakage current of diodes treated by NBE measured at -100V was about one order lower than that of diode without post etch and a half times lower than that of diode treated by ICP without a significant degradation of forward electrical characteristics. Based on the above results, the post annealing process was adapted to a junction barrier Schottky diode with a field limiting ring. The blocking voltages of diode without post annealing etch and diodes treated by ICP and NBE were -1038V, -1125V, and -1595V, respectively.

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DIDUCK, QUENTIN, IAN WALSH, DUBRAVKO BABIĆ, and LESTER F. EASTMAN. "NOVEL HIGH TEMPERATURE ANNEALED SCHOTTKY METAL FOR GaN DEVICES." International Journal of High Speed Electronics and Systems 20, no. 03 (September 2011): 417–22. http://dx.doi.org/10.1142/s0129156411006702.

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We have found that Scandium metal is near ohmic as deposited on GaN , but when it is annealed at high temperatures a large barrier height Schottky forms. In this study we used Sc - Au contacts to form Schottky barrier diodes on AlGaN / GaN HEMT material. We have found that the morphology remains unchanged even after an 800 degrees centigrade anneal. This investigation has revealed that the reverse leakage current of this metal system is an order of magnitude lower than a conventional Ni - Au contact and supports a reverse breakdown that is 1/3rd larger. The similarity of the anneal temperatures to ohmic contacts enable gates and contacts to be annealed at the same time thus simplifying processing. The lack of morphology change supports the use of Sc - Au for E -beam alignment marks as well. Diode contacts on AlGaN / GaN with Schottky-ohmic separation of 10 microns demonstrated reverse breakdown in excess of 100V when the contacts were annealed at 800C. These results suggest this metallization may have applications as a new HEMT gate metal, and Schottky diodes.

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Journal articles on the topic 'Diodes, Schottky-barrier'

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