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Relevant bibliographies by topics / Diodes, Semiconductor

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Academic literature on the topic 'Diodes, Semiconductor'

Author: Grafiati

Published: 4 June 2021

Last updated: 29 July 2024

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Journal articles on the topic "Diodes, Semiconductor"

1

WESSELS, B. W. "MAGNETORESISTANCE OF NARROW GAP MAGNETIC SEMICONDUCTOR HETEROJUNCTIONS." SPIN 03, no. 04 (December 2013): 1340011. http://dx.doi.org/10.1142/s2010324713400110.

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Narrow gap III–V semiconductors have been investigated for semiconductor spintronics. By alloying these semiconductors with manganese magnetic semiconductors result. Large magnetoresistance (MR) effects have been observed in narrow gap magnetic semiconductor p–n heterojunctions. The MR which is positive is attributed to spin selective carrier scattering. For an InMnAs / InAs heterojunction a diode MR of 2680% is observed at room temperature and high magnetic fields. This work indicates that highly spin-polarized magnetic semiconductor heterojunctions can be realized that operate at room temperature. Devices based on the MR include spin diodes and bipolar magnetic junction transistors. We utilize the diode MR states to create a binary logic family.

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Ved M. V., Dorokhin M. V., Lesnikov V. P., Kudrin A. V., Demina P. B., Zdoroveyshchev A. V., and Danilov Yu. A. "Circularly polarized electroluminescence at room temperature in heterostructures based on GaAs:Fe diluted magnetic semiconductor." Technical Physics Letters 48, no. 13 (2022): 76. http://dx.doi.org/10.21883/tpl.2022.13.53370.18836.

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In this work, we demonstrate the possibility of using a diluted magnetic semiconductor GaAs:Fe as a ferromagnetic injector in a spin light-emitting diode based on a GaAs/InGaAs quantum well heterostructure. It is shown that in such a device it is possible to observe partially circularly polarized electroluminescence at room temperature. Keywords: spin light-emitting diodes, diluted magnetic semiconductors, A3B5 semiconductors, spin injection.

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Stankovic, Koviljka, Milos Vujisic, and Edin Dolicanin. "Reliability of semiconductor and gas-filled diodes for over-voltage protection exposed to ionizing radiation." Nuclear Technology and Radiation Protection 24, no. 2 (2009): 132–37. http://dx.doi.org/10.2298/ntrp0902132s.

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The wide-spread use of semiconductor and gas-filled diodes for non-linear over-voltage protection results in a variety of possible working conditions. It is therefore essential to have a thorough insight into their reliability in exploitation environments which imply exposure to ionizing radiation. The aim of this paper is to investigate the influence of irradiation on over-voltage diode characteristics by exposing the diodes to californium-252 combined neutron/gamma radiation field. The irradiation of semiconductor over-voltage diodes causes severe degradation of their protection characteristics. On the other hand, gas-filled over-voltage diodes exhibit a temporal improvement of performance. The results are presented with the accompanying theoretical interpretations of the observed changes in over-voltage diode behaviour, based on the interaction of radiation with materials constituting the diodes.

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Lee, Sehan, Yunseop Yu, Sungwoo Hwang, and Doyeol Ahn. "Equivalent Circuit Model of Semiconductor Nanowire Diode by SPICE." Journal of Nanoscience and Nanotechnology 7, no. 11 (November 1, 2007): 4089–93. http://dx.doi.org/10.1166/jnn.2007.012.

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An equivalent circuit model of nanowire diodes is introduced. Because nanowire diodes inevitably involve a metal-semiconductor-metal structure, they consist of two metal-semiconductor contacts and one resistor in between these contacts. Our equivalent circuit consists of two Schottky diodes and one resistor. The current through the reverse-biased Schottky diode is calculated from the thermionic field emission (TFE) theory and that of the forward-biased Schottky diode is obtained from the classical thermionic emission (TE) equation. Our model is integrated into the conventional circuit simulator SPICE by a sub-circuit with TFE and TE routines. The results simulated with our model by SPICE are in good agreement with various, previously reported experimental results.

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Lee, Sehan, Yunseop Yu, Sungwoo Hwang, and Doyeol Ahn. "Equivalent Circuit Model of Semiconductor Nanowire Diode by SPICE." Journal of Nanoscience and Nanotechnology 7, no. 11 (November 1, 2007): 4089–93. http://dx.doi.org/10.1166/jnn.2007.18083.

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An equivalent circuit model of nanowire diodes is introduced. Because nanowire diodes inevitably involve a metal-semiconductor-metal structure, they consist of two metal-semiconductor contacts and one resistor in between these contacts. Our equivalent circuit consists of two Schottky diodes and one resistor. The current through the reverse-biased Schottky diode is calculated from the thermionic field emission (TFE) theory and that of the forward-biased Schottky diode is obtained from the classical thermionic emission (TE) equation. Our model is integrated into the conventional circuit simulator SPICE by a sub-circuit with TFE and TE routines. The results simulated with our model by SPICE are in good agreement with various, previously reported experimental results.

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Kumar, Umesh. "A Detailed Analytical Study of Non-Linear Semiconductor Device Modelling." Active and Passive Electronic Components 18, no. 4 (1995): 211–45. http://dx.doi.org/10.1155/1995/59312.

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This paper presents a detailed analytical study of Gunn, SCR, and p-n junction and of the physical processes that occur inside. Based on the properties of these devices, models for Gunn, SCR, and p-n junction diode have been developed. The results of computer simulated examples have been presented in each case. The non-linear lumped model for Gunn is a unified model as it describes the diffusion effects as the-domain traves from cathode to anode. An additional feature of this model is that it describes the domain extinction and nucleation phenomena in Gunn dioder with the help of a simple timing circuit. The non-linear lumped model for SCR is general and is valid under any mode of operation in any circuit environment. The memristive circuit model for p-n junction diodes is capable of simulating realistically the diode’s dynamic behavior under reverse, forward and sinusiodal operating modes. The model uses memristor, the charge-controlled resistor to mimic various second-order effects due to conductivity modulation. It is found that both storage time and fall time of the diode can be accurately predicted.

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Eyméoud, Paul, Stéphane Biondo, Vanessa Vervisch, Nadia Grillet, Laurent Ottaviani, and Wilfried Vervisch. "Semiconductor-based diodes for tritium detection." EPJ Web of Conferences 288 (2023): 10020. http://dx.doi.org/10.1051/epjconf/202328810020.

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In order to plan an experimental betavoltaic detection process of tritium using 4H-SiC diodes, we have performed a preliminary numerical Monte-Carlo investigation. In a first part, by evaluating the transparency of several materials to the electrons produced by tritium decay, we have shed light on: (i) the necessity to place the detection diode in close neighborhood of the tritiated sample (less than 1mm distance) or to work in vacuum, (ii) the importance to use very thin coating layers (less than 0.1μm), containing low density materials, (iii) the strong screening effect of 4H-SiC (0.4μm thickness of 4H-SiC divides the intensity flux by 4). In a second part, we have built a deposition energy cartography in PIN and Schottky diodes, confirming that the upstream surface part of the diode (less than 0.5μm depth layers) will constitute the detection region.

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Liu, Wei-Feng, Xue-Mei Wu, Jian-Jun Song, Xin-Yan Zhao, and Rong-Xi Xuan. "Design of Strained Ge Schottky Diode on Si Substrate for Microwave Rectifier Circuit." Advances in Condensed Matter Physics 2020 (February 26, 2020): 1–10. http://dx.doi.org/10.1155/2020/3597142.

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In recent years, wireless energy transmission technology has developed rapidly and has received increasing attention in the industry. For microwave wireless energy transfer system applications, Ge Schottky diodes as the core components of the rectifier circuit are commonly used. Compared with Ge semiconductor, strained Ge semiconductor on Si substrate has the advantages of compatibility with Si process, low cost, and high electron mobility. It is an ideal replacement material for Ge semiconductor applications. In view of this, based on the model of the relationship between the performance of strained Ge semiconductor on Si substrate Schottky diodes and the geometric parameters of the device and the physical parameters of the material, Silvaco TCAD and ADS simulation software are jointly used to propose a novel strained Ge semiconductor on Si substrate Schottky diode for microwave rectification circuit. Simulation results show that the strained Ge semiconductor on Si substrate Schottky diode has a rectification efficiency of 70.1% when the input of the rectifier circuit is 20 dBm, the load resistance is R = 1000 Ω, and the load capacitance is C = 100 pF. Compared with traditional Ge Schottky diodes, this optimal operating point is closer to a low energy density, which is beneficial to a wide range of energy absorption. Studies have shown the feasibility of replacing Ge Schottky diodes. The research in this paper can provide valuable reference for the design and development of the core components of the rectifier circuit of the microwave infinite energy transmission system.

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Liu, Hai Rui, and Jun Sheng Yu. "Characterization of Metal-Semiconductor Schottky Diodes and Application on THz Detection." Advanced Materials Research 683 (April 2013): 729–32. http://dx.doi.org/10.4028/www.scientific.net/amr.683.729.

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This paper presents a kind of air-bridged GaAs Schottky diodes which offer ultra low parasitic capacitance and series resistance in millimeter and THz wavelength. The Schottky barrier diodes have several advantages when used as millimeter wave and terahertz video, or power detectors. These include their fast time response, room temperature operation, simple structure and low cost. This paper describes the characterization of the metal-semiconductor Schottky diodes including principle, diode structure, non-linear voltage-current characteristic and signal-rectifying performance. For application, a quasi-optical THz detector was made by using the proposed Schottky diodes. It utilized a hyper hemispherical silicon lens to coupleand THz radiation to the diodes by integrating on a broadband planar bow-tie antenna. The measurement results of the Schottky diode based detector show a good room temperature performance.

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Bumai, Yurii, Aleh Vaskou, and Valerii Kononenko. "Measurement and Analysis of Thermal Parameters and Efficiency of Laser Heterostructures and Light-Emitting Diodes." Metrology and Measurement Systems 17, no. 1 (January 1, 2010): 39–45. http://dx.doi.org/10.2478/v10178-010-0004-x.

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Measurement and Analysis of Thermal Parameters and Efficiency of Laser Heterostructures and Light-Emitting DiodesA thermal resistance characterization of semiconductor quantum-well heterolasers in the AlGaInAs-AlGaAs system (λst≈ 0.8 μm), GaSb-based laser diodes (λst≈ 2 μm), and power GaN light-emitting diodes (visible spectral region) was performed. The characterization consists in investigations of transient electrical processes in the diode sources under heating by direct current. The time dependence of the heating temperature of the active region of a source ΔT(t), calculated from direct bias change, is analyzed using a thermalRTCTequivalent circuit (the Foster and Cauer models), whereRTis the thermal resistance andCTis the heat capacity of the source elements and external heat sink. By the developed method, thermal resistances of internal elements of the heterolasers and light-emitting diodes are determined. The dominant contribution of a die attach layer to the internal thermal resistance of both heterolaser sources and light-emitting diodes is observed. Based on the performed thermal characterization, the dependence of the optical power efficiency on current for the laser diodes is determined.

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Dissertations / Theses on the topic "Diodes, Semiconductor"

1

Ma, Cliff Liewei. "Modeling of bipolar power semiconductor devices /." Thesis, Connect to this title online; UW restricted, 1994. http://hdl.handle.net/1773/6046.

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Modi, Nihar Triplett Gregory Edward. "Thermal management in GaAs/AlGaAs laser diode structures." Diss., Columbia, Mo. : University of Missouri--Columbia, 2007. http://hdl.handle.net/10355/6262.

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Title from PDF of title page (University of Missouri--Columbia, viewed on Feb. 16, 2010). The entire thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file; a non-technical public abstract appears in the public.pdf file. Thesis supervisor: Dr. Gregory Triplett. Includes bibliographical references.

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Meyers, Mark. "Laser diodes incorporating diffractive features /." Online version of thesis, 1990. http://hdl.handle.net/1850/11233.

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Belhadj-Yahya, Chedly. "Evaluation of the quantum well tunneling diode and the quantum electron-wave interference diode as high speed devices." Diss., Georgia Institute of Technology, 1992. http://hdl.handle.net/1853/15348.

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Los, Andrei. "Influence of carrier freeze-out on SiC Schottky junction admittance." Diss., Mississippi State : Mississippi State University, 2001. http://library.msstate.edu/etd/show.asp?etd=etd-03272001-120540.

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6

Chan, Alan Chin Luen. "Fabrication and measurements on metal-semiconductor diodes." Thesis, McGill University, 1987. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=63966.

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Leong, Hank W. H. "Investigation of dopant profiles from capacitance-voltage measurements on Schottky diodes." Thesis, University of British Columbia, 1990. http://hdl.handle.net/2429/29997.

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Measurement of the differential capacitance (C) of a Schottky diode as a function of voltage (V) is widely used to probe dopant profiles in semiconductors. However, the theory of the dopant profiling method is based on an approximation, and does not work well when the dopant concentration changes rapidly with distance. The region beyond the maximum of an implanted Gaussian profile is of particular interest in connection with ingot qualification tests for GaAs, and it is just there that the problem is the most serious. In this thesis, an investigation was made by numerical simulation on problems associated with the profiling method. Programs were written to calculate the differential capacitance-voltage relation for GaAs Schottky diodes with and without deep energy levels, and with a specified dopant distribution. The programs predict what the approximation method would indicate for the dopant profiles according to a set of canonical equations used in the profiling method. The predicted and the specified dopant profiles were then compared. Mainly ion-implanted dopant profiles in semiconductors were studied although doped epitaxial layers were also considered. For ion-implanted GaAs, the predicted dopant profiles were found to be about 10% lower near the peak region than the true dopant profiles, and the predicted profiles were confirmed to be too high in the tail region. For doped epitaxial layers, the predicted profile was found, in some cases, to give good estimates for the dopant concentrations on the high and low sides of the true step profile, but in some others, the predicted profiles were found to be totally misleading. For GaAs with deep levels, a method of calculating the differential capacitance was developed to take into account the fact that the deep levels do not respond to the 1 MHz a.c. signal normally used in the C(V) measurements. It is believed to simulate the experimental C(V) measurements more realistically. The tail sections of the predicted profiles were found to increase with the concentration of background shallow donor atoms in the deep-level-free semiconductor before ion-implantation, and with the number of impurity atoms which are channelled or diffused to the region during or after ion-implantation. This implies that although the profiling method is erroneous in the tail section, it can nevertheless be used on a comparative basis to indicate the level of background shallow dopant concentration, and the degree of channelling or diffusion. The effects of the substrate parameters in liquid encapsulated Czochralski (LEC) GaAs, which include the concentrations of EL2, net shallow acceptors, and sometimes Cr, have been investigated on the predicted dopant profiles for ion-implanted samples. Increases in Cr and net shallow acceptor concentrations were found to increase the steepness of the predicted dopant profile, while an increase in EL2 concentration has little effect. A method of estimating dopant activation efficiency in GaAs has been proposed. This method uses the author's second program to avoid underestimations of the activation efficiency in GaAs caused by the peak lowering in the predicted dopant profiles. The concept of Debye length in semi-insulating LEC GaAs was also discussed. The Debye length given by the standard formula for semiconductors with shallow donors and acceptors can become inapplicable when deep levels are present.
Applied Science, Faculty of
Electrical and Computer Engineering, Department of
Graduate

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Santhanam, Parthiban. "Thermo-electrically pumped semiconductor light emitting diodes." Thesis, Massachusetts Institute of Technology, 2014. http://hdl.handle.net/1721.1/87935.

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Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2014.
Cataloged from PDF version of thesis.
Includes bibliographical references (pages 217-227).
Thermo-electric heat exchange in semiconductor light emitting diodes (LEDs) allows these devices to emit optical power in excess of the electrical power used to drive them, with the remaining power drawn from ambient heat. In the language of semiclassical electron transport, the electrons and holes within the device absorb lattice phonons as they diffuse from their respective contacts into the LED's active region. There they undergo bimolecular radiative recombination and release energy in the form of photons. In essence the LED is acting as a thermodynamic heat pump operating between the cold reservoir of the lattice and the hot reservoir of the outgoing photon field. In this thesis we report the first known experimental evidence of an LED behaving as a heat pump. Heat pumping behavior is observed in mid-infrared LEDs at sub-thermal forward bias voltages, where electrical-to-optical power conversion at arbitrarily high efficiency is possible in the limit of low optical output power. In this regime, the basic thermal physics of an LED differs from that seen at conventional higher voltage operating points. We construct a theoretical model for entropy transport in an LED heat pump and examine its consequences both theoretically and experimentally. We use these results to propose a new design for an LED capable of very high efficiency power conversion at power densities closer to the limit imposed by the Second Law of Thermodynamics. We then explore the potential application of these thermo-photonic heat pumps as extremely efficient sources for low-power communication and high-temperature absorption spectroscopy.
by Parthiban Santhanam.
Ph. D.

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Phillips, Amyas Edward Wykes. "Passive wavelength athermalisation of semiconductor laser diodes." Thesis, University of Cambridge, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.615225.

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Lee, Junho. "Semiconductor diode laser with saturable absorber (S-laser)." [Gainesville, Fla.] : University of Florida, 2004. http://purl.fcla.edu/fcla/etd/UFE0004277.

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Books on the topic "Diodes, Semiconductor"

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1936-, Sze S. M., ed. High-speed semiconductor devices. New York: Wiley, 1990.

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Kamichik, Stephen. Semiconductor essentials: For hobbyists, technicians & engineers. Indianapolis, IN: Prompt Publications, 1995.

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3

Nosov, Yurii R. Switching in Semiconductor Diodes. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4684-8193-8.

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Nosov, Yurii R. Switching in Semiconductor Diodes. Boston, MA: Springer US, 1995.

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1947-, Lenstra Daan, Society of Photo-optical Instrumentation Engineers., and European Optical Society, eds. Semiconductor lasers and laser dynamics: 27-30 April, 2004, Strasbourg, France. Bellingham, Wash., USA: SPIE, 2004.

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6

Neudeck, Gerold W. The PN junction diode. 2nd ed. Reading, Mass: Addison-Wesley, 1988.

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Ye, Cunyun. Tunable external cavity diode lasers. Hackensack, N.J: World Scientific, 2004.

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Laino, Valerio. Performance analysis of edge emitting lasers in the mid infra-red and visible spectrum. Konstanz: Hartung-Gorre, 2007.

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L, Gunshor Robert, and Nurmikko Arto V, eds. II-VI blue/green light emitters: Device physics and epitaxial growth. San Diego: Academic Press, 1997.

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Szweda, Roy. Gallium nitride & related wide bandgap materials & devices: A market & technology overview 1996-2001. Oxford, UK: Elsevier Advanced Technology, 1997.

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Book chapters on the topic "Diodes, Semiconductor"

1

Powell, Richard F. "Semiconductor Diodes." In Testing Active and Passive Electronic Components, 83–101. Boca Raton: Routledge, 2022. http://dx.doi.org/10.1201/9780203737255-7.

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2

Bird, John. "Semiconductor diodes." In Bird's Electrical Circuit Theory and Technology, 193–205. 7th ed. London: Routledge, 2021. http://dx.doi.org/10.1201/9781003130338-15.

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3

Pandey, O. N. "Semiconductor Diodes." In Electronics Engineering, 21–77. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-78995-4_2.

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Bird, John. "Semiconductor diodes." In Bird's Electrical and Electronic Principles and Technology, 230–44. 7th ed. London: Routledge, 2021. http://dx.doi.org/10.1201/9781003130406-15.

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Lutz, Josef, Heinrich Schlangenotto, Uwe Scheuermann, and Rik De Doncker. "pin Diodes." In Semiconductor Power Devices, 201–70. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-70917-8_5.

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Lutz, Josef, Heinrich Schlangenotto, Uwe Scheuermann, and Rik De Doncker. "Schottky Diodes." In Semiconductor Power Devices, 271–93. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-70917-8_6.

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Lutz, Josef, Heinrich Schlangenotto, Uwe Scheuermann, and Rik De Doncker. "pin-Diodes." In Semiconductor Power Devices, 159–224. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-11125-9_5.

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Lutz, Josef, Heinrich Schlangenotto, Uwe Scheuermann, and Rik De Doncker. "Schottky Diodes." In Semiconductor Power Devices, 225–40. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-11125-9_6.

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Rezende, Sergio M. "Semiconductor Devices: Diodes." In Introduction to Electronic Materials and Devices, 153–94. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-81772-5_6.

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Chow, Weng W., Stephan W. Koch, and Murray Sargent. "Semiconductor Laser Diodes." In Semiconductor-Laser Physics, 1–33. Berlin, Heidelberg: Springer Berlin Heidelberg, 1994. http://dx.doi.org/10.1007/978-3-642-61225-1_1.

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Conference papers on the topic "Diodes, Semiconductor"

1

Rezek, E. A., N. Adachi, D. Tran, and L. Yow. "High Power 1.3 Micron Laser Diodes." In Semiconductor Lasers. Washington, D.C.: Optica Publishing Group, 1987. http://dx.doi.org/10.1364/sla.1987.tud6.

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Brown, E. R., T. C. L. G. Sollner, W. D. Goodhue, and C. L. Chen. "High-Speed Resonant-Tunneling Diodes." In 1988 Semiconductor Symposium, edited by Federico Capasso, Gottfried H. Doehler, and Joel N. Schulman. SPIE, 1988. http://dx.doi.org/10.1117/12.947276.

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Shestakov, D. A., I. S. Bobrov, and V. A. Andreev. "QUALITY CONTROL OF SEMICONDUCTOR DIODES." In Actual problems of physical and functional electronics. Ulyanovsk State Technical University, 2023. http://dx.doi.org/10.61527/appfe-2023.314-316.

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An experimental study of the influence of structural inhomogeneities, foreign inclusions, moisture, leakage currents and other defects on the degradation of semiconductor elements and the appearance of abnormal areas on the forward and reverse branches of the volt-ampere characteristic (VAC) was carried out. An upgraded version of the m-characteristics diagnostics was tested, which allowed for (18...26)% increase the efficiency of rejection of potentially unreliable samples compared to the control of abnormal sites. The values of m-characteristics for three types of diodes are given.

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Niemax, K., C. Schnürer-Patschan, A. Zybin, H. Groll, and Y. Kuritsyn. "Wavelength Modulation Atomic Absorption Spectrometry With Semiconductor Diode Lasers." In Laser Applications to Chemical Analysis. Washington, D.C.: Optica Publishing Group, 1994. http://dx.doi.org/10.1364/laca.1994.wb.4.

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Commercial semiconductor laser diodes of the AlGaAs and AlGaInP types are small, long-lived devices with excellent spectroscopic properties [1]. They are easy to operate and have low power consumption. These are the requirements for the arrangement of many independently operating laser diodes in compact instruments for simultaneous multielement analysis [2]. The main drawback of atomic diode laser spectroscopy is the limited wavelength range of commercially available laser diodes (625-950 nm). It will be extended to shorter wavelengths in the short and medium run. However, if low radiation powers can be used in experiment, it can be overcome by second harmonic generation (SHG) in non-linear crystals. Depending on the fundamental power of the laser diodes and on the efficiency of the crystal used, extracavity SHG-powers in the nW and μW can be generated easily in the range 315-500 nm. Such powers are sufficiently high for laser atomic absorption spectroscopy (LA AS). A list including more than 50 elements which can be measured by LA AS with fundamental and SHG radiation is given in a recent review paper [3].

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Fafard, S., C. Nì Allen, K. Hinzer, and Z. R. Wasilewski. "Quantum dot laser diodes." In Advanced Semiconductor Lasers and Their Applications. Washington, D.C.: OSA, 1999. http://dx.doi.org/10.1364/asla.1999.175.

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Toomey, J. P., and D. M. Kane. "Analysis of Chaotic Semiconductor Laser Diodes." In 2006 Conference on Optoelectronic and Microelectronic Materials and Devices. IEEE, 2006. http://dx.doi.org/10.1109/commad.2006.4429906.

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Perryman, Alan J., James D. Regan, and Ross T. Elliott. "Packaging Considerations For Semiconductor Laser Diodes." In OE/LASE '89, 15-20 Jan., Los Angeles. CA, edited by Luis Figueroa. SPIE, 1989. http://dx.doi.org/10.1117/12.976388.

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Delfyett, Jr., Peter J. "High-power ultrafast semiconductor laser diodes." In OE/LASE'93: Optics, Electro-Optics, & Laser Applications in Science& Engineering, edited by Timothy R. Gosnell, Antoinette J. Taylor, Keith A. Nelson, and Michael C. Downer. SPIE, 1993. http://dx.doi.org/10.1117/12.147075.

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Friend, Richard. "Organic semiconductor LEDs and photovoltaic diodes." In NOBEL SYMPOSIUM 153: NANOSCALE ENERGY CONVERTERS. AIP, 2013. http://dx.doi.org/10.1063/1.4794708.

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Thompson, William E., and Marek Osinski. "Longitudinal behavior in semiconductor laser diodes." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1990. http://dx.doi.org/10.1364/oam.1990.mk11.

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Much of the analysis of high-power semiconductor-laser diodes that has been reported in recent literature is based on the assumption of uniform carrier density (and, consequently, on uniform gain) in the longitudinal direction (z-axis). It was noted long ago1 however, that this assumption is inconsistent with the actual behavior inside the optical cavity. The differential equations that describe the carrier density and the optical fields inside the cavity are coupled, so that a nonuniform total optical field must of necessity introduce a nonuniform carrier density as a function of z. The assumption of uniform carrier density is reasonable for equal facet reflectivities, such as that determined by the GaAs-air interface, but becomes increasingly suspect for situations in which the reflectivities are different (for example, the extraction all optical power from one end in high-power applications) or in which fabrication techniques purposefully introduce variations on longitudinal pumping. To address these situations, an analysis that does not depend on the assumption of uniform carrier distribution is needed. This paper reports on efforts to analyze the behavior of semiconductor laser diodes, including possible variation of parameters in the z-direction. An iterative method has been adopted to examine analytically (to the extent possible) the nonuniformity of carrier density distribution. The first-order correction in the iterative solution is obtained by using two separate approaches. Numerical examples that illustrate the importance of this correction for asymmetric-cavity lasers will be presented.

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Reports on the topic "Diodes, Semiconductor"

1

Mauk, Michael G. Wire-shaped semiconductor light-emitting diodes for general-purpose lighting. Office of Scientific and Technical Information (OSTI), October 2002. http://dx.doi.org/10.2172/809815.

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2

Fritz, I. J., J. F. Klem, and M. J. Hafich. Compact environmental spectroscopy using advanced semiconductor light-emitting diodes and lasers. Office of Scientific and Technical Information (OSTI), April 1997. http://dx.doi.org/10.2172/469149.

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3

Lee, H., and P. Thielen. Semiconductor Quantum Dots for Advanced Blue Light Emitting Devices and Laser Diodes. Office of Scientific and Technical Information (OSTI), April 2000. http://dx.doi.org/10.2172/792654.

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4

Semendy, Fred, Greg Meissner, and Priyalal Wijewarnasuriya. Electrical and Optical Response Properties of MEH-PPV Semiconductor Polymer Schottky Diodes. Fort Belvoir, VA: Defense Technical Information Center, July 2011. http://dx.doi.org/10.21236/ada548948.

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5

Zhang, Weidong, and Dwight Woolard. Magneto-Transpots in Interband Resonant Tunneling Diodes (I-RTDs) and Dilute Magnetic Semiconductor (DMS) I-RTDs. Fort Belvoir, VA: Defense Technical Information Center, March 2011. http://dx.doi.org/10.21236/ada577381.

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6

Forrest, Stephen R., Mark E. Thompson, and Juan Lam. Novel Full Color Flat Panel Display Technology Employing High Performance, Crystalline Organic Semiconductor Light Emitting Diodes. Fort Belvoir, VA: Defense Technical Information Center, May 1998. http://dx.doi.org/10.21236/ada359013.

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7

Deri, R. Semiconductor Laser Diode Pumps for Inertial Fusion Energy Lasers. Office of Scientific and Technical Information (OSTI), January 2011. http://dx.doi.org/10.2172/1018822.

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8

Hartle, Steven J., Joseph Kozol, and Frederick A. Lancaster. An Assessment of Semiconductor Diode Laser Paint Removal Applied to Fiberglass/Epoxy Substrates. Fort Belvoir, VA: Defense Technical Information Center, September 2003. http://dx.doi.org/10.21236/ada416992.

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9

Zhang, Yuancheng, Qian Song, and Shaowei He. Optical Logic and Signal Processing Using a Semiconductor Laser Diode-Based Optical Bistability Device,. Fort Belvoir, VA: Defense Technical Information Center, February 1995. http://dx.doi.org/10.21236/ada293248.

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10

Griffin, Timothy E. Pulsed Capacitance Measurement of Silicon Carbide (SiC) Schottky Diode and SiC Metal Oxide Semiconductor. Fort Belvoir, VA: Defense Technical Information Center, November 2006. http://dx.doi.org/10.21236/ada458317.

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