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1
WESSELS, B. W. "MAGNETORESISTANCE OF NARROW GAP MAGNETIC SEMICONDUCTOR HETEROJUNCTIONS." SPIN 03, no. 04 (December 2013): 1340011. http://dx.doi.org/10.1142/s2010324713400110.
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Narrow gap III–V semiconductors have been investigated for semiconductor spintronics. By alloying these semiconductors with manganese magnetic semiconductors result. Large magnetoresistance (MR) effects have been observed in narrow gap magnetic semiconductor p–n heterojunctions. The MR which is positive is attributed to spin selective carrier scattering. For an InMnAs / InAs heterojunction a diode MR of 2680% is observed at room temperature and high magnetic fields. This work indicates that highly spin-polarized magnetic semiconductor heterojunctions can be realized that operate at room temperature. Devices based on the MR include spin diodes and bipolar magnetic junction transistors. We utilize the diode MR states to create a binary logic family.
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Ved M. V., Dorokhin M. V., Lesnikov V. P., Kudrin A. V., Demina P. B., Zdoroveyshchev A. V., and Danilov Yu. A. "Circularly polarized electroluminescence at room temperature in heterostructures based on GaAs:Fe diluted magnetic semiconductor." Technical Physics Letters 48, no. 13 (2022): 76. http://dx.doi.org/10.21883/tpl.2022.13.53370.18836.
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In this work, we demonstrate the possibility of using a diluted magnetic semiconductor GaAs:Fe as a ferromagnetic injector in a spin light-emitting diode based on a GaAs/InGaAs quantum well heterostructure. It is shown that in such a device it is possible to observe partially circularly polarized electroluminescence at room temperature. Keywords: spin light-emitting diodes, diluted magnetic semiconductors, A3B5 semiconductors, spin injection.
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Stankovic, Koviljka, Milos Vujisic, and Edin Dolicanin. "Reliability of semiconductor and gas-filled diodes for over-voltage protection exposed to ionizing radiation." Nuclear Technology and Radiation Protection 24, no. 2 (2009): 132–37. http://dx.doi.org/10.2298/ntrp0902132s.
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The wide-spread use of semiconductor and gas-filled diodes for non-linear over-voltage protection results in a variety of possible working conditions. It is therefore essential to have a thorough insight into their reliability in exploitation environments which imply exposure to ionizing radiation. The aim of this paper is to investigate the influence of irradiation on over-voltage diode characteristics by exposing the diodes to californium-252 combined neutron/gamma radiation field. The irradiation of semiconductor over-voltage diodes causes severe degradation of their protection characteristics. On the other hand, gas-filled over-voltage diodes exhibit a temporal improvement of performance. The results are presented with the accompanying theoretical interpretations of the observed changes in over-voltage diode behaviour, based on the interaction of radiation with materials constituting the diodes.
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Lee, Sehan, Yunseop Yu, Sungwoo Hwang, and Doyeol Ahn. "Equivalent Circuit Model of Semiconductor Nanowire Diode by SPICE." Journal of Nanoscience and Nanotechnology 7, no. 11 (November 1, 2007): 4089–93. http://dx.doi.org/10.1166/jnn.2007.012.
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An equivalent circuit model of nanowire diodes is introduced. Because nanowire diodes inevitably involve a metal-semiconductor-metal structure, they consist of two metal-semiconductor contacts and one resistor in between these contacts. Our equivalent circuit consists of two Schottky diodes and one resistor. The current through the reverse-biased Schottky diode is calculated from the thermionic field emission (TFE) theory and that of the forward-biased Schottky diode is obtained from the classical thermionic emission (TE) equation. Our model is integrated into the conventional circuit simulator SPICE by a sub-circuit with TFE and TE routines. The results simulated with our model by SPICE are in good agreement with various, previously reported experimental results.
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Lee, Sehan, Yunseop Yu, Sungwoo Hwang, and Doyeol Ahn. "Equivalent Circuit Model of Semiconductor Nanowire Diode by SPICE." Journal of Nanoscience and Nanotechnology 7, no. 11 (November 1, 2007): 4089–93. http://dx.doi.org/10.1166/jnn.2007.18083.
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An equivalent circuit model of nanowire diodes is introduced. Because nanowire diodes inevitably involve a metal-semiconductor-metal structure, they consist of two metal-semiconductor contacts and one resistor in between these contacts. Our equivalent circuit consists of two Schottky diodes and one resistor. The current through the reverse-biased Schottky diode is calculated from the thermionic field emission (TFE) theory and that of the forward-biased Schottky diode is obtained from the classical thermionic emission (TE) equation. Our model is integrated into the conventional circuit simulator SPICE by a sub-circuit with TFE and TE routines. The results simulated with our model by SPICE are in good agreement with various, previously reported experimental results.
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Kumar, Umesh. "A Detailed Analytical Study of Non-Linear Semiconductor Device Modelling." Active and Passive Electronic Components 18, no. 4 (1995): 211–45. http://dx.doi.org/10.1155/1995/59312.
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This paper presents a detailed analytical study of Gunn, SCR, and p-n junction and of the physical processes that occur inside. Based on the properties of these devices, models for Gunn, SCR, and p-n junction diode have been developed. The results of computer simulated examples have been presented in each case. The non-linear lumped model for Gunn is a unified model as it describes the diffusion effects as the-domain traves from cathode to anode. An additional feature of this model is that it describes the domain extinction and nucleation phenomena in Gunn dioder with the help of a simple timing circuit. The non-linear lumped model for SCR is general and is valid under any mode of operation in any circuit environment. The memristive circuit model for p-n junction diodes is capable of simulating realistically the diode’s dynamic behavior under reverse, forward and sinusiodal operating modes. The model uses memristor, the charge-controlled resistor to mimic various second-order effects due to conductivity modulation. It is found that both storage time and fall time of the diode can be accurately predicted.
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Eyméoud, Paul, Stéphane Biondo, Vanessa Vervisch, Nadia Grillet, Laurent Ottaviani, and Wilfried Vervisch. "Semiconductor-based diodes for tritium detection." EPJ Web of Conferences 288 (2023): 10020. http://dx.doi.org/10.1051/epjconf/202328810020.
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In order to plan an experimental betavoltaic detection process of tritium using 4H-SiC diodes, we have performed a preliminary numerical Monte-Carlo investigation. In a first part, by evaluating the transparency of several materials to the electrons produced by tritium decay, we have shed light on: (i) the necessity to place the detection diode in close neighborhood of the tritiated sample (less than 1mm distance) or to work in vacuum, (ii) the importance to use very thin coating layers (less than 0.1μm), containing low density materials, (iii) the strong screening effect of 4H-SiC (0.4μm thickness of 4H-SiC divides the intensity flux by 4). In a second part, we have built a deposition energy cartography in PIN and Schottky diodes, confirming that the upstream surface part of the diode (less than 0.5μm depth layers) will constitute the detection region.
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Liu, Wei-Feng, Xue-Mei Wu, Jian-Jun Song, Xin-Yan Zhao, and Rong-Xi Xuan. "Design of Strained Ge Schottky Diode on Si Substrate for Microwave Rectifier Circuit." Advances in Condensed Matter Physics 2020 (February 26, 2020): 1–10. http://dx.doi.org/10.1155/2020/3597142.
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In recent years, wireless energy transmission technology has developed rapidly and has received increasing attention in the industry. For microwave wireless energy transfer system applications, Ge Schottky diodes as the core components of the rectifier circuit are commonly used. Compared with Ge semiconductor, strained Ge semiconductor on Si substrate has the advantages of compatibility with Si process, low cost, and high electron mobility. It is an ideal replacement material for Ge semiconductor applications. In view of this, based on the model of the relationship between the performance of strained Ge semiconductor on Si substrate Schottky diodes and the geometric parameters of the device and the physical parameters of the material, Silvaco TCAD and ADS simulation software are jointly used to propose a novel strained Ge semiconductor on Si substrate Schottky diode for microwave rectification circuit. Simulation results show that the strained Ge semiconductor on Si substrate Schottky diode has a rectification efficiency of 70.1% when the input of the rectifier circuit is 20 dBm, the load resistance is R = 1000 Ω, and the load capacitance is C = 100 pF. Compared with traditional Ge Schottky diodes, this optimal operating point is closer to a low energy density, which is beneficial to a wide range of energy absorption. Studies have shown the feasibility of replacing Ge Schottky diodes. The research in this paper can provide valuable reference for the design and development of the core components of the rectifier circuit of the microwave infinite energy transmission system.
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Liu, Hai Rui, and Jun Sheng Yu. "Characterization of Metal-Semiconductor Schottky Diodes and Application on THz Detection." Advanced Materials Research 683 (April 2013): 729–32. http://dx.doi.org/10.4028/www.scientific.net/amr.683.729.
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This paper presents a kind of air-bridged GaAs Schottky diodes which offer ultra low parasitic capacitance and series resistance in millimeter and THz wavelength. The Schottky barrier diodes have several advantages when used as millimeter wave and terahertz video, or power detectors. These include their fast time response, room temperature operation, simple structure and low cost. This paper describes the characterization of the metal-semiconductor Schottky diodes including principle, diode structure, non-linear voltage-current characteristic and signal-rectifying performance. For application, a quasi-optical THz detector was made by using the proposed Schottky diodes. It utilized a hyper hemispherical silicon lens to coupleand THz radiation to the diodes by integrating on a broadband planar bow-tie antenna. The measurement results of the Schottky diode based detector show a good room temperature performance.
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Bumai, Yurii, Aleh Vaskou, and Valerii Kononenko. "Measurement and Analysis of Thermal Parameters and Efficiency of Laser Heterostructures and Light-Emitting Diodes." Metrology and Measurement Systems 17, no. 1 (January 1, 2010): 39–45. http://dx.doi.org/10.2478/v10178-010-0004-x.
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Measurement and Analysis of Thermal Parameters and Efficiency of Laser Heterostructures and Light-Emitting DiodesA thermal resistance characterization of semiconductor quantum-well heterolasers in the AlGaInAs-AlGaAs system (λst≈ 0.8 μm), GaSb-based laser diodes (λst≈ 2 μm), and power GaN light-emitting diodes (visible spectral region) was performed. The characterization consists in investigations of transient electrical processes in the diode sources under heating by direct current. The time dependence of the heating temperature of the active region of a source ΔT(t), calculated from direct bias change, is analyzed using a thermalRTCTequivalent circuit (the Foster and Cauer models), whereRTis the thermal resistance andCTis the heat capacity of the source elements and external heat sink. By the developed method, thermal resistances of internal elements of the heterolasers and light-emitting diodes are determined. The dominant contribution of a die attach layer to the internal thermal resistance of both heterolaser sources and light-emitting diodes is observed. Based on the performed thermal characterization, the dependence of the optical power efficiency on current for the laser diodes is determined.
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Su, Xinran. "The Retrospect and Prospect of GaN-Based Schottky Diode." Journal of Physics: Conference Series 2381, no. 1 (December 1, 2022): 012119. http://dx.doi.org/10.1088/1742-6596/2381/1/012119.
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Abstract In the 21st century, with the continuous progress of human society and the continuous upgrading of the integrated circuit industry in recent years, the rapid development of modern science and technology makes us have higher and higher requirements for semiconductor products in our life and production. Compared with the first generation and the second generation of semiconductors, the third generation of semiconductors represented by GaN relies on its high electron mobility, bandgap width, electron saturation speed, high-temperature resistance, radiation resistance, and other suitable material properties. It has more and more extensive application prospects in the research field of microwave high-power devices. Today, the introduction of semiconductors in electronics improves the energy efficiency of equipments and modules. Gallium nitride (GaN) - based schottky diodes have broad application prospects in the next generation of schottky diodes due to their excellent performance. However, because of some technical concerns, these materials have not been fully developed. This work briefly summarized some science and technology related to GaN-Based Schottky Diode. A special focus will be put on the advantages and disadvantages of GaN-Based Schottky Diode, discussing some modern improved designs. Finally, possible breakthroughs of GaN-Based Schottky Diode will be summarized.
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Gunshor, Robert L., and Arto V. Nurmikko. "II-VI Blue-Green Laser Diodes: A Frontier of Materials Research." MRS Bulletin 20, no. 7 (July 1995): 15–19. http://dx.doi.org/10.1557/s088376940003712x.
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The current interest in the wide bandgap II-VI semiconductor compounds can be traced back to the initial developments in semiconductor optoelectronic device physics that occurred in the early 1960s. The II-VI semiconductors were the object of intense research in both industrial and university laboratories for many years. The motivation for their exploration was the expectation that, possessing direct bandgaps from infrared to ultraviolet, the wide bandgap II-VI compound semiconductors could be the basis for a variety of efficient light-emitting devices spanning the entire range of the visible spectrum.During the past thirty years or so, development of the narrower gap III-V compound semiconductors, such as gallium arsenide and related III-V alloys, has progressed quite rapidly. A striking example of the current maturity reached by the III-V semiconductor materials is the infrared semiconductor laser that provides the optical source for fiber communication links and compact-disk players. Despite the fact that the direct bandgap II-VI semiconductors offered the most promise for realizing diode lasers and efficient light-emitting-diode (LED) displays over the green and blue portions of the visible spectrum, major obstacles soon emerged with these materials, broadly defined in terms of the structural and electronic quality of the material. As a result of these persistent problems, by the late 1970s the II-VI semiconductors were largely relegated to academic research among a small community of workers, primarily in university research laboratories.
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Li, Evelyn, Parameswari Raju, and Erhai Zhao. "Design and Simulation of Tunneling Diodes with 2D Insulators for Rectenna Switches." Materials 17, no. 4 (February 19, 2024): 953. http://dx.doi.org/10.3390/ma17040953.
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Rectenna is the key component in radio-frequency circuits for receiving and converting electromagnetic waves into direct current. However, it is very challenging for the conventional semiconductor diode switches to rectify high-frequency signals for 6G telecommunication (>100 GHz), medical detection (>THz), and rectenna solar cells (optical frequencies). Such a major challenge can be resolved by replacing the conventional semiconductor diodes with tunneling diodes as the rectenna switches. In this work, metal–insulator–metal (MIM) tunneling diodes based on 2D insulating materials were designed, and their performance was evaluated using a comprehensive simulation approach which includes a density-function theory simulation of 2D insulator materials, the modeling of the electrical characteristics of tunneling diodes, and circuit simulation for rectifiers. It is found that novel 2D insulators such as monolayer TiO2 can be obtained by oxidizing sulfur-metal layered materials. The MIM diodes based on such insulators exhibit fast tunneling and excellent current rectifying properties. Such tunneling diodes effectively convert the received high-frequency electromagnetic waves into direct current.
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Parker-Allotey, Nii Adotei, Dean P. Hamilton, Olayiwola Alatise, Michael R. Jennings, Philip A. Mawby, Rob Nash, and Rob Magill. "Improved Energy Efficiency Using an IGBT/SiC-Schottky Diode Pair." Materials Science Forum 717-720 (May 2012): 1147–50. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1147.
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This paper will demonstrate how the newer Silicon Carbide material semiconductor power devices can contribute to carbon emissions reduction and the speed of adoption of electric vehicles, including hybrids, by enabling significant increases in the driving range. Two IGBT inverter leg modules of identical power rating have been manufactured and tested. One module has silicon-carbide (SiC) Schottky diodes as anti-parallel diodes and the other silicon PiN diodes. The power modules have been tested and demonstrate the superior electrothermal performance of the SiC Schottky diode over the Si PiN diode leading to a reduction in the power module switching losses.
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Zolper, J. C., and R. J. Shul. "Implantation and Dry Etching of Group-III-Nitride Semiconductors." MRS Bulletin 22, no. 2 (February 1997): 36–43. http://dx.doi.org/10.1557/s0883769400032553.
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The recent advances in the material quality of the group-III-nitride semiconductors (GaN, A1N, and InN) have led to the demonstration of high-brightness light-emitting diodes, blue laser diodes, and high-frequency transistors, much of which is documented in this issue of MRS Bulletin. While further improvements in the material properties can be expected to enhance device operation, further device advances will also require improved processing technology. In this article, we review developments in two critical processing technologies for photonic and electronic devices: ion implantation and plasma etching. Ion implantation is a technology whereby impurity atoms are introduced into the semiconductor with precise control of concentration and profile. It is widely used in mature semiconductor materials systems such as silicon or gallium arsenide for selective area doping or isolation. Plasma etching is employed to define device features in the semiconductor material with controlled profiles and etch depths. Plasma etching is particularly necessary in the III-nitride materials systems due to the lack of suitable wet-etch chemistries, as will be discussed later.Figure 1 shows a laser-diode structure (after Nakamura) where plasma etching is required to form the laser facets that ideally should be vertical with smooth surfaces. The first III-nitride-based laser diode was fabricated using reactive ion etching (RIE) to form the laser facets but suffered from rough mirror facet surfaces that contributed to scattering loss and a high lasing threshold. This is a prime example of how improved material quality alone will not yield optimum device performance.
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Dorokhin, M. V., Y. A. Danilov, Alexei V. Kudrin, E. I. Malysheva, M. M. Prokof’eva, and B. N. Zvonkov. "Fabrication of InGaAs/GaAs Light-Emitting Diodes with GaMnSb Ferromagnetic Injector Layer." Solid State Phenomena 190 (June 2012): 89–92. http://dx.doi.org/10.4028/www.scientific.net/ssp.190.89.
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The electroluminescence properties of ferromagnetic GaMnSb/GaAs diodes have been investigated. It has been found that diodes properties are significantly dependent on GaMnSb layer electrical properties. The intensity of electroluminescence of the diode with semiconductor GaMnSb contact is relatively low, that is due to a high potential barrier at the interface. In case of metallic GaMnSb/GaAs contact high hole injection efficiency provides relatively high electroluminescence intensity. Investigated light-emitting diodes can be prospective for investigation of spin injection effects.
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Khramtsov, Igor A., and Dmitry Yu Fedyanin. "Superinjection of Holes in Homojunction Diodes Based on Wide-Bandgap Semiconductors." Materials 12, no. 12 (June 19, 2019): 1972. http://dx.doi.org/10.3390/ma12121972.
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Electrically driven light sources are essential in a wide range of applications, from indication and display technologies to high-speed data communication and quantum information processing. Wide-bandgap semiconductors promise to advance solid-state lighting by delivering novel light sources. However, electrical pumping of these devices is still a challenging problem. Many wide-bandgap semiconductor materials, such as SiC, GaN, AlN, ZnS, and Ga2O3, can be easily n-type doped, but their efficient p-type doping is extremely difficult. The lack of holes due to the high activation energy of acceptors greatly limits the performance and practical applicability of wide-bandgap semiconductor devices. Here, we study a novel effect which allows homojunction semiconductor devices, such as p-i-n diodes, to operate well above the limit imposed by doping of the p-type material. Using a rigorous numerical approach, we show that the density of injected holes can exceed the density of holes in the p-type injection layer by up to four orders of magnitude depending on the semiconductor material, dopant, and temperature, which gives the possibility to significantly overcome the doping problem. We present a clear physical explanation of this unexpected feature of wide-bandgap semiconductor p-i-n diodes and closely examine it in 4H-SiC, 3C-SiC, AlN, and ZnS structures. The predicted effect can be exploited to develop bright-light-emitting devices, especially electrically driven nonclassical light sources based on color centers in SiC, AlN, ZnO, and other wide-bandgap semiconductors.
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Karushkin, M. F. "Frequency multipliers on semiconductor diode structures." Технология и конструирование в электронной аппаратуре, no. 3 (2018): 22–37. http://dx.doi.org/10.15222/tkea2018.3.22.
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Obvious advantages of the millimeter wave technology including a large information capacity, high directivity of radiation, diagnostics and spectroscopy capabilities of different environments, including the methods of electron paramagnetic resonance and high resolution nuclear magnetic resonance have led to the rapid development of techniques for that range throughout the world. These advantages determine the attractiveness of the practical application of millimeter wavelengths to create high-speed communication links, high-precision radar, chemicals identification device and other equipment. Important role in the development of millimeter and sub-millimeter wave ranges belongs to the frequency multipliers development. This paper analyzes the main trends of modern development of efficient frequency multipliers on semiconductor diode structures, which are based on different physical principles, namely diode harmonic generators; frequency multipliers based on nonlinear dependencies of their reactive parameters on the voltage; frequency multipliers of high multiplicity on IMPATT diodes operating in mode of pulse exciting oscillations at high frequencies; multipliers on complex heterostructures and quantum super lattices in the terahertz range. The paper presents design solutions for frequency multipliers with various configurations and ways of optimizing the diode structures and operation modes that ensure their effective functioning in the frequency multiplication mode. The connection of electric parameters of frequency multipliers with output characteristics of microwave devices is determined. The given review of the results on designing power sources based on multiplying diodes indicates significant advances in this field and rapid development of the electronic component base in the short-wave part of the microwave spectrum. Further development of the technique of multiplying diodes will move forward not only in the direction of increasing the working capacity, but also in solving the problem of microminiaturization. In this regard, the emergence of heteroepitaxial multilayer varactor structures should be noted. Such structures are made with molecular beam epitaxy and have all the advantages of a composite varactor, but at the same time have better thermal characteristics and good prospects for their applications in the terahertz range.
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Okano, Shuichi, Masakuni Suzuki, Takeshi Imura, and Akio Hiraki. "Chalcogenide Amorphous Semiconductor Diodes." Japanese Journal of Applied Physics 24, Part 2, No. 6 (June 20, 1985): L445—L448. http://dx.doi.org/10.1143/jjap.24.l445.
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YAMAMOTO, YOSHIHISA, GUNNAR BJÖRK, ANDERS KARLSSON, HENRICH HEITMANN, and FRANKLIN M. MATINAGA. "QUANTUM STATE CONTROL IN SEMICONDUCTOR pn-JUNCTIONS (II): CONTROLLED SPONTANEOUS EMISSION IN QUANTUM WELL MICROCAVITY LASERS." International Journal of Modern Physics B 07, no. 08 (April 1993): 1653–95. http://dx.doi.org/10.1142/s0217979293002511.
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The principles and applications of controlled spontaneous emission in semiconductor microcavities are reviewed. The coupling efficiency of spontaneous emission into a lasing mode and the spontaneous emission rate can be modified by various microcavity structures. By increasing the coupling efficiency, semiconductor lasers with a very low threshold current, and semiconductors lasers and light emitting diodes with a high quantum efficiency, broad modulation bandwidth and low noise are expected.
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Solovjov, J. A. "Simulation of forward current-voltage characteristics for Schottky diodes with MOS trenches." Doklady BGUIR 19, no. 6 (October 1, 2021): 59–65. http://dx.doi.org/10.35596/1729-7648-2021-19-6-59-65.
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Present work is devoted to the development of a mathematical model for the forward current-voltage characteristic of Schottky diodes with a metal – oxide – semiconductor (MOS) trench structure, which takes into account the accumulation of the main carriers in silicon near the walls of the trenches at a forward bias. The proposed model considers the decrease of the series resistance of the Schottky diode drift region with an increase in the voltage at the rectifying contact due to the enrichment of silicon with electrons near the walls of the trenches. The proposed model is compared with the experimental results for Schottky diodes with a metal – oxide – semiconductor trench structure with a nominal reverse voltage of 45.0 V and a nominal forward current of 50.0 A. It is shown that the error in calculating the direct voltage value for the new model does not exceed 1.2 % in the range of direct currents from 20.0 to 50.0 A, which is 4.6–9.7 times less than the calculation error for the classical model. The results obtained can be used to develop the structure and geometry of Schottky diodes with a metal – oxide – semiconductor trench structure with required electrical parameters.
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Sharma, Sonia, Rahul Rishi, Chander Prakash, Kuldeep K. Saxena, Dharam Buddhi, and N. Ummal Salmaan. "Characterization and Performance Evaluation of PIN Diodes and Scope of Flexible Polymer Composites for Wearable Electronics." International Journal of Polymer Science 2022 (September 13, 2022): 1–10. http://dx.doi.org/10.1155/2022/8331886.
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Different semiconductor materials have been used for the fabrication of PIN diodes such as Si, Ge, GaAs, SiC-3C, SiC-4H, and InAs. These different semiconductor materials show different characteristics and advantages such as SiC-4H is ultrafast switch. But, when flexible polymers composites like Si-nanomembranes, polyethylene terephthalate (PET), and biodegradable polymer composite like carbon nanotubes (CNT) are used for fabrication, the device has the capability to switch from rigid electronic devices to flexible and wearable electronic devices. These polymer composites’ outstanding characteristics like conductivity, charge selectivity, flexibility, and lightweight make them eligible for their selection in fabrication process for wearable electronics devices. In this article, the performance of PIN diodes (BAR64-02) as an RF switch is investigated from 1 to 10 GHz. PIN diodes can control large amounts of RF power at very low DC voltage, implying their suitability for RF applications. In this paper, the benefit of using plastic polymer composites for the fabrication of PIN diodes, capacitors, and antennas is thoroughly described. Along with this, individual characterization, fabrication, and testing of all biasing components are also done to analyze the individual effect of each biasing component on the performance of PIN diodes. The complete biasing circuitry for the PIN diode is modeled in the HFSS software. When a PIN diode is inserted in between 50 Ω microstrip line, it introduces 1 dB insertion loss and 20 dB isolation loss from 1 to 7 GHz. Finally, a PIN diode is integrated in a reconfigurable antenna to study the actual effect. The transmission loss in the RF signal is nearly 1 dB from 1 to 7 GHz in the presence of biasing components.
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Kolesnikov, Maksim, M. Kharchenko, V. Dorohov, and Konstantin Zolnikov. "Application of semiconductor electronics products in extreme conditions." Modeling of systems and processes 16, no. 1 (March 29, 2023): 46–56. http://dx.doi.org/10.12737/2219-0767-2023-16-1-46-56.
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A study of the thermal properties of materials used in semiconductor electronics has been carried out. The dependence of the thermal resistance of GaAs diodes on the temperature increase of the product body is determined. They are determined taking into account the design solutions of the housing design of the REA, which can protect components from extreme, difficult conditions, but they increase the weight and complexity of the system. Materials such as SiC, GaAs, GaN, diamond that can withstand extreme conditions may have advantages that go far beyond their electronic characteristics. An example of the application of GaAs-based diode modules of p-i-n diodes developed by JSC "VZPP-S" is given - a three-phase bridge rectifier made according to the Larionov scheme for an electric generator with a power of up to 2750 watts. A methodology for conducting reliability tests has been developed. Short-term tests for the reliability of diode modules at extreme housing temperatures were carried out. The results of the calculation of the thermal resistance of the junction-housing are presented. To simplify the calculation of the thermal resistance of the junction-housing of the developed module, we will make the following assumptions: the materials used in the design of the module diodes have isotropic thermal conductivity; heat exchange in the internal parts of the structure is carried out only by thermal conductivity; there are no contact resistances between the layers; the power dissipated by the terminals of the diode crystals is negligible compared with the power discharged through the lower base into the heat sink; the side surfaces of the thermal model are insulated; each layer of the same material is homogeneous and has a thermal conductivity coefficient determined by the average temperature of the layer; the influence of the thermal effect of neighboring crystals of the module is not taken into account. The algorithm of stationary thermal regime (method of equivalents) of Appendix N OST 11 0944-96 is chosen as the basis of calculation.
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Jonker, B. T., S. C. Erwin, A. Petrou, and A. G. Petukhov. "Electrical Spin Injection and Transport in Semiconductor Spintronic Devices." MRS Bulletin 28, no. 10 (October 2003): 740–48. http://dx.doi.org/10.1557/mrs2003.216.
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AbstractSemiconductor heterostructures that utilize carrier spin as a new degree of freedom offer entirely new functionality and enhanced performance over conventional devices. We describe the essential requirements for implementing this technology, focusing on the materials and interface issues relevant to electrical spin injection into a semiconductor. These are discussed and illustrated in the context of several prototype semiconductor spintronic devices, including spin-polarized light-emitting diodes and resonant tunneling structures such as the resonant interband tunneling diode.
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Voronkin, E. "Schottky diodes based on the zinc selenide semiconductor crystals." Functional Materials 20, no. 4 (December 25, 2013): 534–37. http://dx.doi.org/10.15407/fm20.04.534.
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Zemliak, Alexander, and Eugene Machusky. "Analysis of Electrical and Thermal Models for Pulsed IMPATT Diode Simulation." WSEAS TRANSACTIONS ON CIRCUITS AND SYSTEMS 20 (July 12, 2021): 156–65. http://dx.doi.org/10.37394/23201.2021.20.19.
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Some nonlinear models are presented for modeling and analyzing IMPATT high-power pulse diodes. These models are suitable for analyzing different operating modes of the oscillator. The first model is a precise one, which describes all important electrical phenomena on the basis of the continuity equations and Poisson´s equation, and it is correct until 300 GHz. The second approximate mathematical model suitable for the analysis of IMPATT diode stationary operation oscillator and for optimization of internal structure of the diode. The temperature distribution in the semiconductor structure is obtained using the special thermal model of the IMPATT diode, which is based on the numerical solution of the non-linear thermal conductivity equation. The described models can be applied for the analysis, optimization and practical design of pulsedmode millimetric IMPATT diodes. It can also be used to evaluate the thermal behavior of diodes, to correctly select the shape and amplitude of a supply pulse, and to design various types of high-power pulsed millimeter IMPATT diodes with a complex doping profile with improved characteristics.
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Bansal, Kanika, and Shouvik Datta. "Dielectric Response of Light Emitting Semiconductor Junction Diodes: Frequency and Temperature Domain Study." MRS Proceedings 1635 (2014): 49–54. http://dx.doi.org/10.1557/opl.2014.206.
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ABSTRACTWe report a change in the dielectric response of AlGaInP based multi quantum well diodes with the onset of modulated light emission. Observed variation in junction capacitance and modulated light emission, with frequency and temperature, suggests participation of slow defect channels in fast radiative recombination dynamics. Our work establishes prominent connection between electrical and optical properties of light emitting diodes and provides a tool to investigate the interesting condensed matter physics of these structures. Our observations demand a generalized physical framework, beyond conventional models, to understand an active light emitting diode under charge carrier injection. We suggest that the low frequency response can compromise the performance of these diodes under high frequency applications. We also suggest how internal quantum well structure can affect modulated light output efficiency of the device.
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Jiang, Feng-Yi, Jun-Lin Liu, Jian-Li Zhang, Long-Quan Xu, Jie Ding, Guang-Xu Wang, Zhi-Jue Quan, et al. "Semiconductor yellow light-emitting diodes." Acta Physica Sinica 68, no. 16 (2019): 168503. http://dx.doi.org/10.7498/aps.68.20191044.
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De Simoni, Giorgio, Lukas Mahler, Vincenzo Piazza, Alessandro Tredicucci, Christine A. Nicoll, Harvey E. Beere, David A. Ritchie, and Fabio Beltram. "Lasing in planar semiconductor diodes." Applied Physics Letters 99, no. 26 (December 26, 2011): 261110. http://dx.doi.org/10.1063/1.3672438.
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Berdahl, Paul. "Radiant refrigeration by semiconductor diodes." Journal of Applied Physics 58, no. 3 (August 1985): 1369–74. http://dx.doi.org/10.1063/1.336309.
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Zorn, Martin. "Highly-Efficient Semiconductor Laser Diodes." Laser Technik Journal 12, no. 1 (January 2015): 25–28. http://dx.doi.org/10.1002/latj.201500004.
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Friend, Richard. "Organic Materials for Large Area Electronics." Materials Science Forum 608 (December 2008): 159–79. http://dx.doi.org/10.4028/www.scientific.net/msf.608.159.
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Organic materials have been developed to operate as the active semiconductor in a wide range of semiconductor devices, including light-emitting diodes, LEDs, field-effect transistors, FETs, and photovoltaic diodes, PVs. The ability to process these materials as thin films over large areas makes possible a range of applications, currently in displays, as LEDs and as active matrix FET arrays, and solar cells. This article reviews developments in semiconductor physics of these materials and in their application in semiconductor devices
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Chen, Lung-Chien, Chih-Hung Hsu, Xiuyu Zhang, and Jia-Ren Wu. "Low-Cost ZnO:YAG-Based Metal-Insulator-Semiconductor White Light-Emitting Diodes with Various Insulators." International Journal of Photoenergy 2014 (2014): 1–4. http://dx.doi.org/10.1155/2014/959620.
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ZnO:YAG-based metal-insulator-semiconductor (MIS) diodes with various insulators were synthesized on an indium tin oxide (ITO) glass by ultrasonic spray pyrolysis. SiO2and MnZnO (MZO) were separately used as insulators. X-ray diffraction revealed the crystalline structure of the ZnO:YAG film. The photoluminescence (PL) properties of the ZnO:YAG film were studied and the color of photoluminescence was found to be almost white. The electrical properties of the diodes with different insulators and thicknesses were compared. The diode with the SiO2insulator had a lower threshold voltage, smaller leakage current, and a higher series resistance than that with the MZO insulator layer.
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Shurenkov, V. V. "On the Physical Mechanism of the Interaction of the Microwave Radiation with the Semiconductor Diodes." Advanced Materials Research 1016 (August 2014): 521–25. http://dx.doi.org/10.4028/www.scientific.net/amr.1016.521.
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The electronic systems of aerospace techniques include power microwave devices and analog and digital semiconductor devices. The radiation of power microwave devices may effect on the semiconductor devices. So it’s necessary to know the electromagnetic effects of this radiation on the semiconductor devices. The electromagetic effects of the microwave radiation exposure on the semiconductor diodes, the main part of any semiconductor devices, are considered. The changes of current – voltage characteristics of the diodes are explained, outgoing from the model of the recombination of carriers through deep energy level recombination center in forbidden gap induced by microwave radiation field.
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Машков, P. Mashkov, Кастрюлев, A. Kastryulev, Харченко, and M. Kharchenko. "THE APPLICATION OF SOME STRUCTURAL AND TECHNOLOGICAL SOLUTIONS IN DEVELOPMENT OF SCHOTTKY DIODES WITH IMPROVED FUNCTIONAL CHARACTERISTICS." Modeling of systems and processes 8, no. 1 (July 2, 2015): 18–21. http://dx.doi.org/10.12737/12015.
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The paper presents some of the design and technological solutions that helped to improve the performance of the Schottky diodes, as well as radically improve their resistance to ionizing radiation. To check the calculations made by the model samples were prepared with a Schottky barrier diode (maximum permissible density of the average forward current - 100 A / cm2, the maximum reverse voltage - 150 V). The studies determined the optimal design of the working part of a Schottky diode, advanced design of the peripheral field-optimized technology for creating the metal-semiconductor interface. During tests carried diodes obtained prototypes it was found that the functional characteristics, as well as resistance to ionizing radiation, were at or better stated requirements
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Tinoco, Julio C., Samuel A. Hernandez, María de la Luz Olvera, Magali Estrada, Rodolfo García, and Andrea G. Martinez-Lopez. "Impact of the Semiconductor Defect Density on Solution-Processed Flexible Schottky Barrier Diodes." Micromachines 13, no. 5 (May 21, 2022): 800. http://dx.doi.org/10.3390/mi13050800.
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Schottky barrier diodes, developed by low-cost techniques and low temperature processes (LTP-SBD), have gained attention for different kinds of novel applications, including flexible electronic fabrication. This work analyzes the behavior of the I–V characteristic of solution processed, ZnO Schottky barrier diodes, fabricated at a low temperature. It is shown that the use of standard extraction methods to determine diode parameters in these devices produce significant dispersion of the ideality factor with values from 2.2 to 4.1, as well as a dependence on the diode area without physical meaning. The analysis of simulated I–V characteristic of LTP-SBD, and its comparison with experimental measurements, confirmed that it is necessary to consider the presence of a density of states (DOS) in the semiconductor gap, to understand specific changes observed in their performance, with respect to standard SBDs. These changes include increased values of Rs, as well as its dependence on bias, an important reduction of the diode current and small rectification values (RR). Additionally, it is shown that the standard extraction methodologies cannot be used to obtain diode parameters of LTP-SBD, as it is necessary to develop adequate parameter extraction methodologies for them.
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Holonyak, Nick. "From Transistors to Lasers and Light-Emitting Diodes." MRS Bulletin 30, no. 7 (July 2005): 509–15. http://dx.doi.org/10.1557/mrs2005.142.
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AbstractThis article is based on the 2004 Von Hippel Award address by Nick Holonyak Jr. (University of Illinois at Urbana-Champaign). Holonyak received the award for “his many contributions to research and development in the field of semiconductors, not least for the first development of semiconductor lasers in the useful visible portion of the optical spectrum.” The talk was presented on Holonyak's behalf by Russell Dupuis on December 1, 2004, at the Materials Research Society Fall Meeting in Boston.With the discovery of the transistor by Bardeen and Brattain in 1947, and as a consequence of carrier injection and collection, the hole indeed became equal to the electron. The semiconductor took on new importance, as did the study of electron–hole recombination, first in the transistor materials Ge and Si, and then in III–V crystals (e.g., GaAs and GaP). Beyond Si and its indirect-gap and heterojunction limitations, the directgap III–V materials, particularly III–V alloys, made possible lasers and light-emitting diodes (LEDs)—and thus optoelectronics.The direct-gap III–V alloy LED after four decades of development exceeds in performance the incandescent lamp (as well as other forms of lamps) in much of the visible range. Beyond growing display applications, it has put conventional lighting under longrange threat with a semiconductor lamp—an “ultimate lamp” that promises unusual performance and energy savings. In principle, the LED or laser, basically a p–n junction, is an ultimate lamp that cannot be exceeded.
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Li, Zai Jin, Yi Qu, Te Li, Peng Lu, Bao Xue Bo, Guo Jun Liu, and Xiao Hui Ma. "The Characteristics of Facet Coatings on Diode Lasers." Advanced Materials Research 1089 (January 2015): 202–5. http://dx.doi.org/10.4028/www.scientific.net/amr.1089.202.
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The effect of the output power with different facet passivation methods on 980 nm graded index waveguide structure InGaAs/AlGaAs laser diodes was studied. The output power of the 980 nm laser diodes with Si passivation, and ZnSe passivation at the front and the back facet were compared. The test results show that output power of the ZnSe passivation method is 11% higher than Si passivation method. The laser diode with the Si passivation film is failure when current is 5.1 A, the laser diode with the ZnSe passivation film is not failure until current is 5.6 A And we analyzed the failure reasons for each method. In conclusion, the method of coated ZnSe passivation on the laser diode facet can effectively increase the output power of semiconductor lasers.
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Parshin, V. A., V. V. Bliznyuk, and A. V. Dolgov. "Polarization stability of the single-mode laser diodes radiation applied in radiation scattering study complexes." Journal of Physics: Conference Series 2127, no. 1 (November 1, 2021): 012040. http://dx.doi.org/10.1088/1742-6596/2127/1/012040.
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Abstract Key features of semiconductor lasers and its serially manufacturing technology modernization have greatly expanded of its using at applied studies at last 20 years. But there is set of factors restricting such lasers application in a number of optical-electronic measuring complexes. Particularly in particle image velocimetry (PIV) and laser Doppler velocimetry (LDV) complexes commonly the gas and solid-state lasers is used due to more stability of spectral, energy and polarization characteristics of radiation then semiconductor lasers have. However gradual introduction of the serially manufacturing laser diodes into such systems picking up the pace that certainly characterizes the progress of reaching the required stability of its output laser radiation parameters. In laser measurement systems where medium investigation carried out by analyzing of scattering radiation in it the probe radiation polarization is often important. So the using in such systems the laser diodes as sources of radiation need to be followed by stability monitoring of its polarization characteristics which may be violated both by the outer factors and by natural degradation of inner laser diode structure. This work is devoted to the issues of monitoring the radiation polarization characteristics of the serially manufacturing single-mode laser diodes.
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Zemliak, Alexander. "Models for IMPATT Diode Analysis and Optimization." WSEAS TRANSACTIONS ON COMMUNICATIONS 21 (June 30, 2022): 215–24. http://dx.doi.org/10.37394/23204.2022.21.26.
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Some of nonlinear models for high-power pulsed IMPATT diode simulation and analysis is presented. These models are suitable for the analysis of the different operational modes of the oscillator. Its take into account the main electric and thermal phenomena in the semiconductor structure and the functional dependence of the equation coefficients on the electrical field and temperature. The first model is a precise one, which describes all important electrical phenomena on the basis of the continuity equations and Poisson equation and it is correct until 300 GHz. The second approximate mathematical model suitable for the analysis of IMPATT diode stationary operation oscillator and for optimization of internal structure of the diode. This model is based on the continuity equation system solution by reducing the boundary problem for the differential partial equations to a system of the ordinary differential equations. The temperature distribution in the semiconductor structure is obtained using the special thermal model of the IMPATT diode, which is based on the numerical solution of the non-linear thermal conductivity equation. The described models can be applied for analysis, optimization and practical design of pulsed-mode millimetric IMPATT diodes. Its can be also utilized for diode thermal regime estimation, for the proper selection of feed-pulse shape and amplitude, and for the development of the different type of complex doping-profile high-power pulsed millimetric IMPATT diodes with improved characteristics.
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Harada, T., S. Ito, and A. Tsukazaki. "Electric dipole effect in PdCoO2/β-Ga2O3 Schottky diodes for high-temperature operation." Science Advances 5, no. 10 (October 2019): eaax5733. http://dx.doi.org/10.1126/sciadv.aax5733.
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High-temperature operation of semiconductor devices is widely demanded for switching/sensing purposes in automobiles, plants, and aerospace applications. As alternatives to conventional Si-based Schottky diodes usable only at 200°C or less, Schottky interfaces based on wide-bandgap semiconductors have been extensively studied to realize a large Schottky barrier height that makes high-temperature operation possible. Here, we report a unique crystalline Schottky interface composed of a wide-gap semiconductor β-Ga2O3 and a layered metal PdCoO2. At the thermally stable all-oxide interface, the polar layered structure of PdCoO2 generates electric dipoles, realizing a large Schottky barrier height of ~1.8 eV, well beyond the 0.7 eV expected from the basal Schottky-Mott relation. Because of the naturally formed homogeneous electric dipoles, this junction achieved current rectification with a large on/off ratio approaching 108 even at a high temperature of 350°C. The exceptional performance of the PdCoO2/β-Ga2O3 Schottky diodes makes power/sensing devices possible for extreme environments.
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Irokawa, Yoshihiro. "Characterization of the Metal-Semiconductor Interface of Pt-GaN Diode Hydrogen Sensors." Materials Science Forum 740-742 (January 2013): 473–76. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.473.
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In this paper, interaction mechanism of hydrogen with GaN metal-insulator-semiconductor (MIS) diodes has been investigated, focusing on the metal/semiconductor interfaces. As a result, the following three points are revealed: First, MIS Pt-SiO2-GaN diodes show a marked improvement in detection sensitivity, suggesting that the device interface plays a critical role in sensing. Second, exposure of the diodes to hydrogen is found to change the conduction mechanisms from Fowler-Nordheim tunneling to Pool-Frenkel emission. Third, interface trap level density of the diodes is found to be reduced by hydrogen exposure even at room temperature. These results support the validity of the hydrogen-induced dipole layer model.
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Bonyadi, Yeganeh, Peter M. Gammon, Yogesh K. Sharma, Guy Baker, and Philip A. Mawby. "An Investigation into the Impact of Surface Passivation Techniques Using Metal-Semiconductor Interfaces." Materials Science Forum 897 (May 2017): 443–46. http://dx.doi.org/10.4028/www.scientific.net/msf.897.443.
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Schottky barrier diodes (SBD) were fabricated on SiC surfaces that had been treated with different surface passivation techniques, so that metal-semiconductor analysis could be used to evaluate the quality of this surface. In this paper, we discuss the results of this study that used Current-Voltage (I-V), Capacitance-Voltage (C-V) and Current-Voltage-Temperature (I-V-T) analysis to look at the impact of untreated oxidation, Nitrous oxide (N2O) and Phosphorus Silicate Glass (PSG) treatments prior to oxide removal, and the formation of Mo, Ni and Ti diodes. While the results of this study did not reveal any consistent patterns between the different treatments, a Mo diode formed on a surface after PSG treatment, displays exceptionally low leakage (4.44×10-5 A/cm2 at 19°C; 7.26×10-4 A/cm2 at 300°C) given a low barrier height (1.27 eV). Moreover, the barrier heights extracted from C-V analysis before contact annealing show a variation across all the diodes, suggesting that the interface is greatly suffering from Fermi-Level pinning, the result of significant interface traps.
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Баранников, И. А., and С. М. Фёдоров. "Reconfigurable semiconductor plasma-based patch antenna." ВЕСТНИК ВОРОНЕЖСКОГО ГОСУДАРСТВЕННОГО ТЕХНИЧЕСКОГО УНИВЕРСИТЕТА 19, no. 6(-) (December 20, 2023): 102–6. http://dx.doi.org/10.36622/vstu.2023.19.6.015.
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в статье рассматривается конструкция реконфигурируемой патч-антенны, способной динамически менять свои рабочие частоты. Изменение рабочих частот антенны осуществляется посредством изменения размеров ее проводящей поверхности с помощью полупроводниковой плазмы, формируемой поверхностными PIN-диодами. Рассматривается конструкция PIN-диода, применяемого в антенне, который способен формировать плазму. Производится математическое моделирование его параметров. По полученной концентрации электронов 5·1018 1/см3 рассчитана плазменная частота, определяющая взаимодействие плазмы с электромагнитными волнами различных частот. Полученные PIN-диоды предлагается объединять в массивы для увеличения площади создаваемой проводящей поверхности и уменьшения влияния цепей питания на характеристики излучения антенны. Характеристики антенны получены посредством электродинамического компьютерного моделирования для двух режимов работы: когда на диоды не подается напряжение и плазма отсутствует; и когда на диоды подано положительное напряжение и сформированная плазма образует дополнительные проводящие поверхности. Рабочие частоты антенны расположены в диапазоне СВЧ (сверхвысоких частот) и составляют 18.46 ГГц и 20.02 ГГц, также получены графики возвратных потерь антенны, ее КПД (коэффициент полезного действия) и диаграммы направленности для обоих случаев работы. Результаты показали незначительное ухудшение характеристик антенны при включенной плазме, но полученная возможность динамически менять рабочий диапазон частот является значительным преимуществом The paper deals with the design of a reconfigurable patch antenna capable of dynamically changing its operating frequencies. Changing the operating frequencies of the antenna is accomplished by changing the dimensions of its conducting surface using semiconductor plasma formed by surface PIN diodes. The design of a PIN diode used in the antenna, which is capable of forming plasma, is considered. Mathematical modeling of its parameters is performed. According to the obtained electron concentration of 5·1018 1/cm3 the plasma frequency, which determines the interaction of plasma with electromagnetic waves of different frequencies, is calculated. The obtained PIN diodes are proposed to be combined in arrays to increase the area of the generated conducting surface and to reduce the influence of the feeding circuits on the antenna radiation characteristics. The antenna characteristics are obtained through electrodynamic computer modeling for two modes of operation: when no voltage is applied to the diodes and there is no plasma; and when a positive voltage is applied to the diodes and the generated plasma forms additional conducting surfaces. The operating frequencies of the antenna are located in the SHF range and are 18.46 GHz and 20.02 GHz, and plots of antenna return loss, efficiency and radiation patterns for both cases of operation are also obtained. The results showed a slight degradation of the antenna performance when the plasma is on, but the resulting ability to dynamically change the operating frequency range is a significant advantage
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Maset, E., Esteban Sanchis-Kilders, Pierre Brosselard, Xavier Jordá, Miquel Vellvehi, and Phillippe Godignon. "300°C SiC Blocking Diodes for Solar Array Strings." Materials Science Forum 615-617 (March 2009): 925–28. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.925.
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Silicon Carbide 300V-5A Ni and W Schottky diodes with high temperature operation capability (up to 300°C) have been fabricated. This paper reports on the stability tests (ESA space mission to Mercury, BepiColombo requirements) performed on these diodes. A DC current stress of 5A has been applied to these diodes at 270°C for 800 hours. These reliability tests revealed both, degradation at the Schottky interface (forward voltage drift) and at the diode top surface due to Aluminum diffusion (bond pull strength degradation). The use of W as Schottky metal allows eliminating the forward voltage drift producing stable metal–semiconductor interface properties. Nevertheless, SEM observations of the top metallization still reveal metal degradation after stress. The bond pull strength of the wire bond is also significantly reduced.
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Ostapchuk, Mikhail, Dmitry Shishov, Daniil Shevtsov, and Sergey Zanegin. "Research of Static and Dynamic Properties of Power Semiconductor Diodes at Low and Cryogenic Temperatures." Inventions 7, no. 4 (October 18, 2022): 96. http://dx.doi.org/10.3390/inventions7040096.
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Systems with high-temperature superconductors (HTSC) impose new requirements on power conversions, since the main part of the losses in such systems is induced in the semiconductors of the converters. Within the framework of this study, the possibility of improving the static and dynamic characteristics of power semiconductor diodes using cryogenic cooling was confirmed; in some cases, a loss reduction of up to 30% was achieved.
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TEMİRCİ, CABİR, and BAHRI BATI. "EFFECT OF SURFACE PASSIVATION ON CAPACITANCE–VOLTAGE CHARACTERISTICS OF Sn/p-Si SCHOTTKY CONTACTS." International Journal of Modern Physics B 25, no. 04 (February 10, 2011): 531–42. http://dx.doi.org/10.1142/s0217979211058158.
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We have fabricated the Sn/p-Si Schottky barrier diodes with the interfacial layer metal–insulator–semiconductor (D-MIS) and the surface passivation metal–semiconductor MS (D-MS) by the anodization or chemical treatment method. The current–voltage (I–V) and capacitance–voltage (C–V) characteristics of the devices were measured at room temperature. We obtained that the excess capacitance (C0) value of the MIS Sn/p-Si diode with the anodic oxide layer of 16.88 pF and 0.12 pF for the MS Sn/p-Si ideal diode with the surface passivation by the anodization or chemical treatment method from reverse bias C–V characteristics. Thus, we have succeeded to diminish the excess capacitance value to the limit of 0.12 pF for the MS Sn/p-Si diode by using the anodization or chemical treatment method.
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Lau, Wai Shing. "Mechanism of Reverse Leakage Current in Schottky Diode Fabricated on Large Bandgap Semiconductors like Ga2O3 or Diamond Part II." ECS Meeting Abstracts MA2022-01, no. 31 (July 7, 2022): 1323. http://dx.doi.org/10.1149/ma2022-01311323mtgabs.
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The bandgap of Ga2O3 (4.5-4.9 eV) is larger than the bandgap of GaN (3.4 eV). In addition, single crystal bulk Ga2O3 wafers can be more easily manufactured than GaN wafers. Therefore, Ga2O3 has strong potential for applications in high power semiconductor devices [1]. Schottky diodes fabricated on n-type Ga2O3 have strong potential as fast high-power switching devices. Similarly, the bandgap of diamond (5.5 eV) is very large and diamond Schottky diodes have good potential. One possible mechanism of reverse leakage current in Schottky diodes is image force barrier lowering at the metal-semiconductor interface. Historically, there were 2 theories regarding the image force barrier lowering effect. In 1953, Krömer published his theory that the image force dielectric constant in the equation for Schottky emission should be equal to 1 [2]. Subsequently in 1964, Sze et al. published their theory that the image force dielectric constant in the equation for Schottky emission should be equal to n2 [3], where n is the refractive index of the semiconductor in the infrared or visible light range. In 1969, Sze published a book which has influenced many scientists [4]. Sze’s theory [3]-[4] quickly became the dominating theory whereas Krömer’s theory essentially became a forgotten theory. In 2020, the author pointed out that Krömer’s theory is quite frequently more compatible with experimental results for Ga2O3 or diamond Schottky diodes [5]. In 2021, the author attempted to propose a new theory involving the concept of electron velocity overshoot to unify Krömer’s theory and Sze’s theory, as shown in Fig. 1 [6]; Krömer’s theory is better than Sze’s theory for high reverse bias voltage. In conclusion, the author pointed out that it is necessary to resurrect an old and forgotten theory from Krömer in order to explain the experimental data on the reverse leakage current of Schottky diodes fabricated on large bandgap semiconductors like Ga2O3 and diamond, etc. A theoretical basis based on quasi-ballistic transport will be provided. References [1] M. Higashiwaki, H. Murakami, Y. Kumagai and A. Kuramata, Jpn. J. Appl. Phys., 55, 1202A1 (2016). [2] H. Krömer, Zeitschrift fur Physik, 134, 435 (1953). (In German.) [3] S.M. Sze, C.R. Crowell and D. Kahng, J. Appl. Phys., 35, 2534 (1964). [4] S.M. Sze, Physics of Semiconductor Devices, p. 367, Wiley Interscience, New York (1969). [5] W.S. Lau, ECS Trans. 97 (4), 99 (2020). [6] W.S. Lau, CSTIC 2021 (China Semiconductor Technology International Conference, Shanghai, 2021, IEEE), 1 (2021). (Available from IEEE database.) Figure 1
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Ivanov A.S., Pavelyev D.G., Obolensky S.V., and Obolenskaya E.S. "Radiation hardness of subterahertz radiation source based on heterodyne on Gunn diode generator and superlattice multiplier." Technical Physics 92, no. 13 (2022): 2071. http://dx.doi.org/10.21883/tp.2022.13.52223.133-21.
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The radiation resistance to gamma irradiation of various dose levels (0.5 kGy, 2 kGy, 10 kGy) of a subterahertz radiation source from a heterodyne on a Gunn diode and a GaAs / AlAs semiconductor superlattice multiplier was estimated. A measuring chamber for studying the radiation resistance of Gunn diodes has been developed and manufactured. The dependence of the output power on the frequency of a sub-terahertz radiation source before and after irradiation was evaluated analytically. Keywords: radiation hardness, superlattice, Gunn diode, terahertz.
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Friend, R. H. "Conjugated polymers. New materials for optoelectronic devices." Pure and Applied Chemistry 73, no. 3 (January 1, 2001): 425–30. http://dx.doi.org/10.1351/pac200173030425.
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Conjugated polymers now provide a class of processible, film-forming semiconductors and metals. We have worked on the development of the semiconductor physics of these materials by using them as the active components in a range of semiconductor devices. Polymer light-emitting diodes show particular promise, and recent developments in color range (red, green, and blue), efficiency (above 20 lumen/W for green emitters), and operating lifetime are discussed. Progress on their application to displays, with integration with active-matrix TFT drive, and with patterned deposition using inkjet printing techniques is also reviewed. The role played by interfaces between electrode and semiconducting polymer is also discussed.