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Dissertations / Theses on the topic 'Discharge devices'

Author: Grafiati

Published: 28 May 2022

Last updated: 30 July 2025

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1

Hwang, Yu-Chul. "Electrostatic discharge and electrical overstress failures of non-silicon devices." College Park, Md. : University of Maryland, 2005. http://hdl.handle.net/1903/2198.

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Thesis (Ph. D.) -- University of Maryland, College Park, 2005.<br>Thesis research directed by: Mechanical Engineering. Title from t.p. of PDF. Includes bibliographical references. Published by UMI Dissertation Services, Ann Arbor, Mich. Also available in paper.

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2

Tunnicliffe, Martin James. "Electrical overstress and electrostatic discharge failure in silicon MOS devices." Thesis, Loughborough University, 1993. https://dspace.lboro.ac.uk/2134/7304.

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This thesis presents an experimental and theoretical investigation of electrical failure in MOS structures, with a particular emphasis on short-pulse and ESD failure. It begins with an extensive survey of MOS technology, its failure mechanisms and protection schemes. A program of experimental research on MOS breakdown is then reported, the results of which are used to develop a model of breakdown across a wide spectrum of time scales. This model, in which bulk-oxide electron trapping/emission plays a major role, prohibits the direct use of causal theory over short time-scales, invalidating ear

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3

Tammela, Petter. "On the electrochemical performance of energy storage devices composed of cellulose and conducting polymers." Doctoral thesis, Uppsala universitet, Nanoteknologi och funktionella material, 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-300917.

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Applications that require electrical energy storage are becoming increasingly diverse. This development is caused by a number of factors, such as an increasing global energy demand, the advent of electric vehicles, the utilization of intermittent renewable energy sources, and advances in disposable and organic electronics. These applications will set different demands on their electrical energy storage and, thus, there will be no single technology used for all applications. For some applications the choice of energy storage materials will be extremely important. Conventional batteries and supe

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4

Chappell, S. "Active control with dielectric barrier discharge actuators applied to high-lift devices." Thesis, University of Southampton, 2013. https://eprints.soton.ac.uk/359742/.

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An experimental investigation examined the capability of dielectric barrier discharge (DBD) actuators to control a high-lift device system. Aerodynamic tests investigated the potential of utilising the actuator to control the flap side-edge vortex flow field. Acoustic tests examined the attenuation of slat noise with a DBD actuator. The sparse knowledge related to the control of a vortex flow field with a DBD actuator necessitated a more fundamental study that used a NACA 0015 wing. From this study, it was shown that the application of control resulted in a more diffused tip vortex. The actuat

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5

Cooper, Moogega Fridman Alexander A. "Elucidation of levels of bacterial viability post-non-equilibrium dielectric barrier discharge plasma treatment /." Philadelphia, Pa. : Drexel University, 2009. http://hdl.handle.net/1860/3181.

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6

Li, You. "Design of low-capacitance and high-speed electrostatic discharge (ESD) devices for low-voltage protection applications." Doctoral diss., University of Central Florida, 2010. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/4551.

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Electrostatic discharge (ESD) is defined as the transfer of charge between bodies at different potentials. The electrostatic discharge induced integrated circuit damages occur throughout the whole life of a product from the manufacturing, testing, shipping, handing, to end user operating stages. This is particularly true as microelectronics technology continues shrink to nano-metric dimensions. The ESD related failures is a major IC reliability concern and results in a loss of millions dollars to the semiconductor industry each year. Several ESD stress models and test methods have been develop

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7

Wielandt, Trish. "The identification of the factors which influence the post-discharge use of prescribed adaptive equipment /." St. Lucia, Qld, 2003. http://www.library.uq.edu.au/pdfserve.php?image=thesisabs/absthe17566.pdf.

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8

Shastry, Rahul. "Continuous Deposition of Carbon Nanotubes in an Arc-reactor and their Application in Field Emission Devices." Thesis, University of Canterbury. Chemical and Process Engineering, 2007. http://hdl.handle.net/10092/3267.

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Carbon nanotubes have become one of the most important building blocks critical to nanotechnology. Carbon nanotubes have attracted the interests of many scientists since their discovery due to their remarkable properties and have been widely used for various applications. However, the bottle neck in nanotube research has been the lack of a cheap, continuous and fast nanotube production method. This study concerns a reactor where nanotubes are continuously deposited on a carbon substrate using arc discharge at atmospheric pressure. This process appears to be the first to employ an arc discharge

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9

Loayza, Ramirez Jorge Miguel. "Study and characterization of electrical overstress aggressors on integrated circuits and robustness optimization of electrostatic discharge protection devices." Thesis, Lyon, 2017. http://www.theses.fr/2017LYSEI044.

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Cette thèse de doctorat s’inscrit dans la thématique de la fiabilité des circuits intégrés dans l’industrie de la microélectronique. Un circuit intégré peut être exposé à des agresseurs électriques potentiellement dangereux pendant toute sa durée de vie. Idéalement, les circuits devraient pouvoir encaisser ces excès d’énergie sans perdre leur fonctionnalité. En réalité, des défaillances peuvent être observées lors de tests de qualification ou en application finale. Il est donc dans l’intérêt des fabricants de réduire ces défaillances. Actuellement, il existe des circuits de protection sur puce

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10

Alves, Wolney. "Modelling of wave generation in sewer systems by intermittent discharge devices using the Saint-Venant and Boussinesq equations." Thesis, Heriot-Watt University, 1996. http://hdl.handle.net/10399/708.

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11

Averkin, Sergey Nikolaevich. "A Global Enhanced Vibrational Kinetic Model for Radio-Frequency Hydrogen Discharges and Application to the Simulation of a High Current Negative Hydrogen Ion Source." Digital WPI, 2015. https://digitalcommons.wpi.edu/etd-dissertations/89.

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A Global Enhanced Vibrational Kinetic (GEVKM) model is presented and applied to the simulation of a new High Current Negative Hydrogen Ion Source (HCNHIS) developed by Busek Co. Inc. and Worcester Polytechnic Institute. The HCNHIS consists of a high-pressure radio-frequency discharge (RFD) chamber in which the main production of high-lying vibrational states of the hydrogen molecules occurs, a bypass system, and a low-pressure negative hydrogen ion production (NIP) region where negative ions are generated by the dissociative attachment of low energy electrons to rovibrationally excited hydroge

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12

Калініченко, Павло Михайлович, Павел Михайлович Калиниченко, Pavlo Mykhailovych Kalinichenko, Т. И. Лукьяненко та Е. А. Лукьяненко. "Двухступенчатые и двухпоточные разгрузочные устройства". Thesis, Сумский государственный университет, 2013. http://essuir.sumdu.edu.ua/handle/123456789/31787.

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Узел осевой разгрузки ротора многоступенчатого центробежного насоса является сильно нагруженный с объемными потерями, которые уносят до 10% мощности насоса. Для снижения удельной нагрузки, а следовательно увеличения надежности машины и уменьшения объемных потерь выполнены исследования связанные с переходом к двухступенчатым и двухпоточным разгрузочным устройствам, результаты которых и составляют содержание данной работы. При цитировании документа, используйте ссылку http://essuir.sumdu.edu.ua/handle/123456789/31787

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13

Solder, John Edward Eberly. "Quantifying groundwater-surface water exchange| Development and testing of Shelby tubes and seepage blankets as discharge measurement and sample collection devices." Thesis, The University of Utah, 2014. http://pqdtopen.proquest.com/#viewpdf?dispub=1568587.

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<p> Quantification of groundwater-surface water exchange and the role of hyporheic flow in this exchange is increasingly of interest to a wide range of disciplines (e.g., hydrogeology, geochemistry, biology, ecology). The most direct method to quantify groundwater-surface water exchange is a seepage meter, first developed in the 1940s. Widespread use of the traditional 1970s-era 55-gallon half-barrel seepage meter has shown that the method is subject to potential errors, particularly in flowing waters (e.g., streams, rivers, tidal zones). This study presents two new direct seepage measurement

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14

Lou, Lifang. "Design, characterization and compact modeling of novel silicon controlled rectifier (SCR)-based devices for electrostatic discharge (ESD) protection applications in integrated circuits." Orlando, Fla. : University of Central Florida, 2008. http://purl.fcla.edu/fcla/etd/CFE0002374.

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15

Ghin, Raymond. "Avalanche multiplication and breakdown in wide bandgap semiconductors." Thesis, University of Sheffield, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.301673.

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16

Lou, Lifang. "DESIGN, CHARACTERIZATION AND COMPACT MODELING OF NOVEL SILICON CONTROLLED RECTIFIER (SCR)-BASED DEVICES FOR ELECTROSTATIC DISCHA." Doctoral diss., University of Central Florida, 2008. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/2840.

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Electrostatic Discharge (ESD), an event of a sudden transfer of electrons between two bodies at different potentials, happens commonly throughout nature. When such even occurs on integrated circuits (ICs), ICs will be damaged and failures result. As the evolution of semiconductor technologies, increasing usage of automated equipments and the emerging of more and more complex circuit applications, ICs are more sensitive to ESD strikes. Main ESD events occurring in semiconductor industry have been standardized as human body model (HBM), machine model (MM), charged device model (CDM) and internat

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17

Hu, Boxue. "Challenges and Solutions of Applying Medium-Voltage Silicon Carbide Devices in Medium and High-Voltage Systems." The Ohio State University, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=osu1565967269661455.

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18

Yan, Ning. "High-frequency Current-transformer Based Auxiliary Power Supply for SiC-based Medium Voltage Converter Systems." Thesis, Virginia Tech, 2020. http://hdl.handle.net/10919/101507.

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Auxiliary power supply (APS) plays a key role in ensuring the safe operation of the main circuit elements including gate drivers, sensors, controllers, etc. in medium voltage (MV) silicon carbide (SiC)-based converter systems. Such a converter requires APS to have high insulation capability, low common-mode coupling capacitance (Ccm ), and high-power density. Furthermore, considering the lifetime and simplicity of the auxiliary power supply system design in the MV converter, partial discharge (PD) free and multi-load driving ability are the additional two factors that need to be addressed in t

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19

Ahmed, Muhammad Shafiq. "Characterization of carbon nanotubes grown by chemical vapour deposition." Thesis, UOIT, 2009. http://hdl.handle.net/10155/26.

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Carbon nanotubes (CNTs), discovered by Ijima in 1991, are one of the allotropes of carbon, and can be described as cylinders of graphene sheet capped by hemifullerenes. CNTs have excellent electrical, mechanical, thermal and optical properties and very small size. Due to their unique properties and small size, CNTs have a great potential for use in electronics, medical applications, field emission devices (displays,scanning and electronprobes/microscopes) and reinforced composites. CNTs can be grown by different methods from a number of carbon sources such as graphite, CO,C2H4, CH4 and camphor

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20

Kantor, Tomáš. "Elektrostatický odlučovač pro domovní spalovací zařízení spalující dřevní paliva." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2020. http://www.nusl.cz/ntk/nusl-417771.

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Master thesis deals with design of electrostatic precipitator for domestic wood-burning appliances. In the opening chapters, principles of electrostatic precipitation are described and a study of existing electrostatic precipitators for domestic combustion devices is made. In the practical part of the thesis, a mathematical model of electrostatic precipitator was created. Based on the mathematical model, electrostatic precipitator was designed and its performance parameters predicted.

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21

Meyer, Ryan. "Inertial electrostatic confinement theoretical and experimental studies of spherical devices /." Diss., Columbia, Mo. : University of Missouri-Columbia, 2007. http://hdl.handle.net/10355/4736.

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Thesis (Ph. D.)--University of Missouri-Columbia, 2007.<br>The entire dissertation/thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file (which also appears in the research.pdf); a non-technical general description, or public abstract, appears in the public.pdf file. Title from title screen of research.pdf file (viewed on February 25, 2008) Vita. Includes bibliographical references.

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22

Hughes, Jerry W. (Jerry Wayne) 1975. "A device for tritium enrichment of glow discharge polymer inertial confinement fusion targets." Thesis, Massachusetts Institute of Technology, 1999. http://hdl.handle.net/1721.1/85319.

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23

Newton, David Brooke. "The Effectiveness of Modular Porous Pavement as a Stormwater Treatment Device." Thesis, Griffith University, 2005. http://hdl.handle.net/10072/367825.

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The potential of porous pavement to meet the key stormwater management objectives of peak discharge control, pollutant removal and runoff volume reduction has been recognised for several decades. However, concerns over maintenance and the structural inferiority of porous pavements have led to interest in pavement systems that utilize both porous and impervious pavements. In such systems the porous pavement may act as a treatment device for impervious area runoff. This study examines the extent to which such combined pavement systems are capable of reducing the impacts of urbanisation on down

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24

Herbold, Janet Anne. "Gait analysis following Total Knee Arthroplasty during Inpatient Rehabilitation: Can findings predict LOS, ambulation device, and discharge disposition?" Diss., NSUWorks, 2017. https://nsuworks.nova.edu/hpd_pt_stuetd/71.

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Background: Total knee arthroplasty (TKA) is the treatment of choice for end-stage knee osteoarthritis. Growth in the number of procedures performed annually in the United States is expected to increase steadily. Post-operative rehabilitation settings vary and include both institutional and community based physical therapy (PT) services. Despite access to PT, deficits in gait often persist for months and even years after surgery. Slow gait speed, asymmetrical walking patterns, and prolonged time in double-limb support following the TKA often lead to the need for an assistive device for walking

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25

Romanescu, Sorin. "Modèle compact paramétrable du SCR pour applications ESD et RF." Phd thesis, Université de Grenoble, 2011. http://tel.archives-ouvertes.fr/tel-00648390.

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La protection contre les décharges électrostatiques (ESD) est un fait necessaire dans chaque circuit intégré. Elle se fait par le déploiement sur la puce d'un réseau de dispositifs spéciaux, à côtés des éléments fonctionnels. La demande pour des améliorations en continu dans la conception et la simulation de l'ESD apporte le besoin de modèles nouveaux et plus précises. La SCR (" Silicon Controlled Rectifier ") est l'un des dispositifs les plus efficaces de protection contre l'ESD. Un nouveau modèle électrique, qui peut être utilisé pour évaluer les structures de protection complexe dont il fai

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26

Bushman, Michelle. "Contribution of Recharge Along Regional Flow Paths to Discharge at Ash Meadows, Nevada." Diss., CLICK HERE for online access, 2008. http://contentdm.lib.byu.edu/ETD/image/etd2386.pdf.

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27

Mazza, Alessandro. "Set up of a procedure for correlation analysis between current discharge and dose delivery in a pulsed power plasma device for medical application." Master's thesis, Alma Mater Studiorum - Università di Bologna, 2016. http://amslaurea.unibo.it/10233/.

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This thesis work aims to find a procedure for isolating specific features of the current signal from a plasma focus for medical applications. The structure of the current signal inside a plasma focus is exclusive of this class of machines and a specific analysis procedure has to be developed. The hope is to find one or more features that shows a correlation with the dose erogated. The study of the correlation between the current discharge signal and the dose delivered by a plasma focus could be of some importance not only for the practical application of dose prediction but also for expanding

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28

Liu, Wen. "Design, Characterization and Analysis of Electrostatic Discharge (ESD) Protection Solutions in Emerging and Modern Technologies." Doctoral diss., University of Central Florida, 2012. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/5404.

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Electrostatic Discharge (ESD) is a significant hazard to electronic components and systems. Based on a specific processing technology, a given circuit application requires a customized ESD consideration that includes the devices' operating voltage, leakage current, breakdown constraints, and footprint. As new technology nodes mature every 3-5 years, design of effective ESD protection solutions has become more and more challenging due to the narrowed design window, elevated electric field and current density, as well as new failure mechanisms that are not well understood. The endeavor of this r

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29

Besse, Patrice. "Tenue en énergie de structures LDMOS avancées de puissance intégrée dans les domaines temporels de la nanoseconde à la milliseconde." Toulouse 3, 2004. http://www.theses.fr/2004TOU30297.

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Ce mémoire traite de la tenue aux décharges électrostatiques (ESD) et inductives de transistors de puissance LDMOS, réalisés dans des technologies BiCMOS. Des simulations physiques bidimensionnelles, corrélées avec des analyses de défaillances et des résultats de mesures ont permis d'établir et de valider les mécanismes électriques de défaillance du transistor LDMOS. Des règles de dessin sont données pour améliorer sa robustesse face aux ESD, pour différentes polarisations de sa grille. Ces règles n'engendrent aucune modification technologique et ne dégradent pas les caractéristiques électriqu

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30

Bonnissel, Marc. "Adsorption de gaz modulée en température par des éléments thermoélectriques à effet Peltier." Vandoeuvre-les-Nancy, INPL, 1997. http://docnum.univ-lorraine.fr/public/INPL_T_1997_BONNISSEL_M.pdf.

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Cette thèse présente un nouveau procédé d'adsorption modulée en température base sur l'utilisation d'éléments thermoélectriques et d'un nouveau composite adsorbant à base de graphite expansé recomprimé. Le contexte de ce travail est la recherche de petits dispositifs compacts et souples adaptés à des installations embarquées. L’adsorption est un procédé exothermique dans lequel une augmentation de température provoque une diminution de quantité adsorbée. Les procédés classiques utilisent des gaz chauds ou de la vapeur pour régénérer le lit adsorbant. Les étapes de chauffage, de séchage et de r

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31

NOLOT, EMMANUEL. "Etude de dispositifs de protection contre les effets des decharges electriques au sein d'un generateur de tres haute tension : l'accelerateur vivitron." Université Joseph Fourier (Grenoble), 1996. http://www.theses.fr/1996GRE10195.

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Le vivitron est un accelerateur electrostatique du type tandem van de graaff dont la realisation, fondee sur des concepts originaux, doit permettre d'atteindre une tension nominale voisine de 30 mv. Pour l'instant, le fonctionnement de ce generateur de tres haute tension est limite a 20 mv car la structure isolante de la colonne du vivitron est sensible aux effets des decharges electriques dans le gaz isolant, l'hexafluorure de soufre. Nous avons tente d'analyser les causes de ces decharges electriques afin de limiter leur probabilite d'occurence, de modeliser les contraintes transitoires asso

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32

Nikolaidis, Théodoros. "Optimisation des performances ESD de circuits intègres CMOS submicroniques." Grenoble INPG, 1995. http://www.theses.fr/1995INPG0185.

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Apres avoir presente les notions de base au sujet des decharges electrostatiques (esd) (origine des decharges electrostatiques, modeles de decharge, effet de snap-back et effet de deuxieme claquage, modelisation des effets esd, caracterisation et methodes d'analyse de defaillance ainsi que modes de defaillance), les structures de protection de base des deux procedes cmos de cinq cent et trois cent cinquante nanometres (diodes zener-ldd et transistors npn lateraux et nmos avec/sans ldd) ont ete analysees et optimisees a l'egard des contraintes esd. Ensuite, la performance esd de circuits integr

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33

Papadopoulos, Stavros. "Etude d'un arc de disjoncteur a soufflage auto-genere." Toulouse 3, 1986. http://www.theses.fr/1986TOU30075.

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Etude d'un prototype industriel de disjoncteur pour courants alternatifs de 5 a 20 ka. Mesures des grandeurs electriques de l'arc et de la pression dans le disjoncteur pour deux gaz de remplissage (sf::(6) et azote). Modelisation de la phase de soufflage de l'arc, basee sur les equations de conservation de la masse et de l'energie, prenant en compte l'ecoulement axial de gaz et le phenomene de turbulence. Les conditions aux limites et les conditions initiales decoulent de calculs fondes sur des modelisations particulieres. Le role de la turbulence sur le transfert d'energie a ete mis en eviden

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34

Guitard, Nicolas. "Caractérisation de défauts latents dans les circuits intégrés soumis à des décharges électrostatiques." Phd thesis, Université Paul Sabatier - Toulouse III, 2006. http://tel.archives-ouvertes.fr/tel-00139542.

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Les agressions électriques, du type décharges électrostatiques (ESD) et surcharges électriques (EOS), sont à l'origine de plus de 50% des défaillances des circuits intégrés. De plus, avec l'avènement des technologies sans fil et des applications dites "plus électriques" en automobile et dans l'aviation, les spécifications de robustesse à ces agressions se sont considérablement durcies. Dans le même temps, la réduction des dimensions et la complexité croissante des technologies pose le problème de leur susceptibilité à ces contraintes EOS/ESD et de la probabilité non négligeable de génération d

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Li, Qing. "Electrostatic Discharge Protection Devices for CMOS I/O Ports." Thesis, 2012. http://hdl.handle.net/10012/6944.

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In modern integrated circuits, electrostatic discharge (ESD) is a major problem that influences the reliability of operation, yield and cost of fabrication. ESD discharge events can generate static voltages beyond a few kilo volts. If these voltages are dissipated in the chip, high electric field and high current are generated and will destroy the gate oxide material or melt the metal interconnects. In order to protect the chip from these unexpected ESD events, special protection devices are designed and connect to each pin of the IC for this purpose. With the scaling of nano-metric processing

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Hsu, Che-Lun, and 許哲綸. "Study of Electrostatic Discharge Protection Devices in High-Voltage BCD Technology." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/15421955459637229479.

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碩士<br>國立交通大學<br>電子工程系所<br>98<br>High-voltage (HV) transistors in smart power technologies have been extensively used for display driver integrated circuits (ICs), power supplies, power management and automotive electronics. However, the process complexity and the difficulty to guarantee the reliability of HV devices are greatly increased for the sake of sustaining such high operating voltage in HV ICs. As a result, the electrostatic discharge (ESD) reliability becomes challenging due to the severe latch-up threat in such a harsh environment. The ESD protection design with high efficiency is vi

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Huang, Yu-Ching, and 黃楀晴. "Study of Electrostatistic Discharge Protection Devices in High-Voltage BCD Processes." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/65094237162090781412.

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碩士<br>國立交通大學<br>電子工程學系電子研究所<br>102<br>Nowadays, with a rapid increase in demand, such as motor drivers, LED lighting, solar energy and display driver circuits, high voltage integrated process technologies have been developed and become commercially available. The lateral DMOS (LDMOS) is a common device for high-voltage output driver. Thus, LDMOS was expected for self-protection electrostatic discharge (ESD) device. ESD is an inevitable event during fabrication, packaging and testing processes of integrated circuits. ESD protection design is therefore necessary to protect ICs from being damage

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38

Kirkpatrick, Michael Joseph Locke Bruce R. "Plasma-catalyst interactions in treatment of gas phase contaminants and in electrical discharge in water." 2004. http://etd.lib.fsu.edu/theses/available/etd-11152004-115758.

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Thesis (Ph. D.)--Florida State University, 2004.<br>Advisor: Dr. Bruce R. Locke, Florida State University, College of Engineering, Dept. of Chemical Engineering. Title and description from dissertation home page (viewed Jan. 13, 2005). Includes bibliographical references.

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Tseng, Jen-Chou, and 曾仁洲. "Effects of Electrostatic Discharge High-Field Current Impulse on Metal-Oxide-Semiconductor Devices." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/57756138998579700868.

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博士<br>國立臺灣大學<br>電機工程學研究所<br>95<br>The effects of ESD high-field current impulse on gate oxide and made comparisons with the results of dc stress is studied in this thesis. Including generation of stress-induced trapped charges and the breakdown mechanisms were proposed. Besides, the density and spatial distribution of traps by ESD and dc stressing were investigated. According to the centroid of oxide trapped charges and the profile of interface traps induced by ESD stress, the explanation for locally filamentary current conduction and early oxide breakdown are suggested. Finally, lateral non-u

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Tseng, Jen-Chou. "Effects of Electrostatic Discharge High-Field Current Impulse on Metal-Oxide-Semiconductor Devices." 2007. http://www.cetd.com.tw/ec/thesisdetail.aspx?etdun=U0001-1007200710535000.

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Chuang, Jie-Yao, and 莊介堯. "Investigation on Electrostatic Discharge (ESD) Robustness of Low Temperature Poly-Silicon (LTPS) Devices and Panels." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/65392740484860449801.

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碩士<br>國立交通大學<br>電機學院微電子奈米科技產業專班<br>96<br>Low temperature poly-silicon (LTPS) thin-film transistors (TFTs) have been widely investigated as a material for portable systems, such as digital camera, mobile phone, personal digital assistants (PDAs), notebook, and so on, because the electron mobility of LTPS TFTs is about 100 times larger than that of the conventional amorphous silicon TFTs. Furthermore, LTPS technology can achieve slim, compact, and high-resolution display by integrating the driving circuits on peripheral area of display. This technology will also become more suitable for realizat

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Huang, Hsiao-Ching, and 黃筱晴. "Study of Electrostatic Discharge Protection Devices and Their Safe Operating Area in High-Voltage BCD SOI Process." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/87505225608642636805.

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碩士<br>國立交通大學<br>電子研究所<br>99<br>High-voltage (HV) transistors in smart power technologies have been extensively used for display driver integrated circuits (ICs), power supplies, power management and automotive electronics. The importance of reliability issue should not be underestimated in HV ICs as a result of the process complexity and stringent operating environments. Among the various reliability specifications, electrostatic discharge (ESD) protection and safe operating area (SOA) are becoming the essential issues for HV ICs. A HV transistor simultaneously exhibiting excellent ESD robustn

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Lee, Shie-Heng, and 李協恒. "Surface-modified Carbon Nanotubes Synthesized by Arc-discharge Method and Its Application on Self-assembly Field Emission Devices." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/39297599743095097881.

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碩士<br>元智大學<br>化學工程學系<br>93<br>Carbon nanotubes (CNTs) have attracted considerable attention in field emitter applications due to their unique structure, high aspect ratio and high emission current. Since having low voltage supply, it can launch an electron at the CNTs tip to be a strong electric field. The property of field emission of CNTs makes them promising candidates for field emission display applications. Thererfore, the main objectives of the present study were to investigate the optimal conditions of synthesis, purification, and surface-modified with acid treatment of CNTs by arc d

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Chen, Chia-Wen, and 陳嘉文. "ESD protection improvement and Failure Analysis for 0.13µm high voltage device Electrostatic Discharge Protection for High Voltage Devices in Liquid crystal Display Driver Integrated Circuits." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/gp7ge9.

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碩士<br>國立交通大學<br>工學院半導體材料與製程設備學程<br>103<br>High voltage (HV) devices are important to thin-film-transistor (TFT) liquid crystal display (LCD) driver integrated circuits (IC) because they need to withstand high operation voltages and currents. However, HV ICs have much more complex fabrication processes than typical ICs. When miniaturization of ICs continues, some parasitic elements in HV ICs may be turned on and the endurance against electrostatic discharge (ESD) becomes weaker. In addition, HV devices are often operated in harsh environments, which can increase the probability of latch-up in t

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Kranthi, Nagothu Karmel. "ESD Reliability Physics and Reliability Aware Design of Advanced High Voltage CMOS & Beyond CMOS Devices." Thesis, 2021. https://etd.iisc.ac.in/handle/2005/5474.

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Electrostatic Discharge (ESD) reliability is one of the major reliability concerns in integrated circuits (IC), which if not addressed while designing devices and circuits, can lead to a permanent damage to the Integrated Circuits. The same becomes a rather more stringent in case of system level ESD events (System level ESD), which usually occurs in uncontrolled or harsh environments. To address these issues physical insights into the non-equilibrium electron-phonon (electro-thermal) behaviour of these devices, under nano-second time scale high-current conditions, are required to be developed.

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Chen, Tung-Yang, and 陳東暘. "The Design and Analysis of Electrostatic Discharge Protection Devices and Circuits Using Transmission-Line-Pulsing Technique and Substrate-Triggering Technique." Thesis, 1997. http://ndltd.ncl.edu.tw/handle/14378832808016116004.

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碩士<br>國立交通大學<br>電子工程學系<br>85<br>In the advanced deep-submicron CMOS technology, it is more difficult to prevent damages from the ESD (Electrostatic Discharge) stresses. To understand the physical characteristics and ESD robustness of protection devices in the wafer level, a transmission line pulsing generator (TLPG) system had been set up in several advanced companies to measure the secondary breakdown characteristics of the protection devices. The relationship between the secondary breakdo

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Sinha, Rajat. "Reliability Physics of Thin-Film Transistors." Thesis, 2022. https://etd.iisc.ac.in/handle/2005/5682.

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Thin-film transistor technology based on non-crystalline materials forms the workhorse of large area electronics applications including display systems, sensor systems and novel technologies including flexible electronics. A successful development and commercialisation of any technology requires a thorough understanding of the physics and reliability concerns revolving around that technology. Electrostatic discharge (ESD) is one of the major reliability concerns in microelectronics industry and can plague the device development at many stages. It is a high-field high-frequency phenomenon

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BENEDIKT, Ondřej. "Rozbor příčin požárů vzniklých v Jihočeském kraji v letech 2009 - 2013 od elektrických zařízení a návrh opatření ke zlepšení stavu." Master's thesis, 2014. http://www.nusl.cz/ntk/nusl-174458.

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The thesis is divided into two parts, theoretical and empirical. In the first, the author explains the important terms for processing the empirical part. He deals with the theory of fire and summary of the general rules. He also deals with finding out the causes of fire and the computer program "Statistical monitoring of events", all the data were taken here. The chapter provides a general overview of el. devices, classification, history and possible danger. A very important of this part is the division of el. initiators explain. the terms such as el. short circuit, impedance, el. spark, el. a

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Cheng, Yu-Jhen, and 程于真. "Development of a Detection Device for Partial Discharge Signals." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/kx7qr4.

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碩士<br>國立臺灣科技大學<br>電機工程系<br>104<br>When the electrical equipment is in long-term operation, the insulating material characteristics deteriorate gradually under the effect of different external factors. When the electric field intensity in the deterioration position is higher than the allowable insulating strength of the insulating material, the Partial Discharge (PD) phenomenon is generated. The PD may deteriorate insulation causing damage, but the deterioration development takes a while. The development time is related to the equipment operating condition, PD position and insulation structure

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Huang, Xing-Ding, and 黃新丁. "Application of Acoustic Insulation Analyzerfor High Voltage Device Partial Discharge Diagnosis." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/72622637135171115087.

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碩士<br>義守大學<br>電機工程學系碩士在職專班<br>102<br>With technological advances the quality of people's needs would rise, so the electric power quality has become an important issue however it rely on the stability of power supply equipment power and stable equipment also depend on the technical personnel maintaining more carefully and rely rapid and accurate diagnostic techniques to assist and support technical personnel on-site to enhance the efficiency of maintenance this paper on a worked field through inspecting and routine sample testing abnormalities found in the device as an example through a prelimi

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