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Relevant bibliographies by topics / Discrete power switching devices

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Journal articles

Academic literature on the topic 'Discrete power switching devices'

Author: Grafiati

Published: 6 September 2023

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Journal articles on the topic "Discrete power switching devices"

1

Nechay, Bettina, Megan Snook, Harold Hearne, et al. "High-Yield 4H-SiC Thyristors for Wafer-Scale Interconnection." Materials Science Forum 717-720 (May 2012): 1171–74. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1171.

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Modern power conditioning systems require large active area devices which can support high currents. Though the breakdown and thermal properties of SiC make it an excellent choice for power switching applications, active area size is currently limited due to material and processing defects. One alternative is to parallel discrete diced die to achieve large active areas. However, this increases cost and complexity through dicing, soldering, and forming multiple wire bonds. Furthermore, paralleling discrete devices increases package volume/weight and reduces power density. To overcome these issu

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2

Zhang, Wenli, Zhengyang Liu, Fred Lee, Shuojie She, Xiucheng Huang, and Qiang Li. "A Gallium Nitride-Based Power Module for Totem-Pole Bridgeless Power Factor Correction Rectifier." International Symposium on Microelectronics 2015, no. 1 (2015): 000324–29. http://dx.doi.org/10.4071/isom-2015-wp11.

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The totem-pole bridgeless power factor correction (PFC) rectifier has recently gained popularity for ac-dc power conversion. The emerging gallium nitride (GaN) high-electron-mobility transistor (HEMT), having a small body diode reverse recovery effect and low switching loss, is a promising device for use in the totem-pole approach. The design, fabrication, and thermal analysis of a GaN-based full-bridge multi-chip module (MCM) for totem-pole bridgeless PFC rectifier are introduced in this work. Four cascode GaN devices using the same pair of high-voltage GaN HEMT and low-voltage silicon (Si) p

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3

Shahed, Md Tanvir, and A. B. M. Harun-Ur Rashid. "An Improved Topology of Isolated Bidirectional Resonant DC-DC Converter Based on Wide Bandgap Transistors for Electric Vehicle Onboard Chargers." International Transactions on Electrical Energy Systems 2023 (March 2, 2023): 1–18. http://dx.doi.org/10.1155/2023/2609168.

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This article proposes an improved topology for an isolated bidirectional resonant DC-DC converter for electric vehicle (EV) onboard chargers. As opposed to the conventional capacitor-inductor-inductor-inductor-capacitor (CLLLC) resonant converter, the proposed converter’s resonant circuit is composed of a capacitor-inductor-inductor-inductor (CLLL) structure, whose inductances, except the capacitor, can be fully integrated with the leakage and mutual inductances of the high-frequency transformer (HF). Therefore, this offers a smaller size, lower costs, minimal power loss, and eventually higher

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Nepsha, Fedor, and Roman Belyaevsky. "Development of Interrelated Voltage Regulation System for Coal Mines Energy Efficiency Improving." E3S Web of Conferences 41 (2018): 03013. http://dx.doi.org/10.1051/e3sconf/20184103013.

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In this paper, the authors propose an algorithm for interrelated voltage regulation in the power supply system of coal mine which allows to provide a normative voltage level and to minimize the level of active power consumption. A feature of the proposed algorithm is a separate consideration of discrete and nondiscrete variables. Nondiscrete variables are represented as a state matrix. The optimization of nondiscrete variables is performed for each state. The algorithm chooses a state with the minimal active power consumption. The obtained values of discrete and nondiscrete variables are trans

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5

Lu, Xiang, Volker Pickert, Maher Al-Greer, Cuili Chen, Xiang Wang, and Charalampos Tsimenidis. "Temperature Estimation of SiC Power Devices Using High Frequency Chirp Signals." Energies 14, no. 16 (2021): 4912. http://dx.doi.org/10.3390/en14164912.

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Silicon carbide devices have become increasingly popular in electric vehicles, predominantly due to their fast-switching speeds, which allow for the construction of smaller power converters. Temperature sensitive electrical parameters (TSEPs) can be used to determine the junction temperature, just like silicon-based power switches. This paper presents a new technique to estimate the junction temperature of a single-chip silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor (MOSFET). During off-state operation, high-frequency chirp signals below the resonance frequency of the

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6

Ren, Jie, and Jian She Tian. "Simulation on Multi-Objective Wind Power Integration Using Genetic Algorithm with Adaptive Weight." Advanced Materials Research 986-987 (July 2014): 529–32. http://dx.doi.org/10.4028/www.scientific.net/amr.986-987.529.

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Aiming at problems which were brought by large-scale wind power integration, and the problem of multi-objective reactive power optimization considering the coexistence of discrete variables and continuous variables, a method of simulation based on genetic algorithm with adaptive weight is brought out. A solving thinking presents that capacitor switching and transformer tap adjusting and other discrete equipments are first, and the action sequence of generator and dynamic reactive power compensation (DRPC) devices and other continuous equipments setting follows, which is presented that optimiza

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7

Kim, Woo Seok, Minju Jeong, Sungcheol Hong, Byungkook Lim, and Sung Il Park. "Fully Implantable Low-Power High Frequency Range Optoelectronic Devices for Dual-Channel Modulation in the Brain." Sensors 20, no. 13 (2020): 3639. http://dx.doi.org/10.3390/s20133639.

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Wireless optoelectronic devices can deliver light to targeted regions in the brain and modulate discrete circuits in an animal that is awake. Here, we propose a miniaturized fully implantable low-power optoelectronic device that allows for advanced operational modes and the stimulation/inhibition of deep brain circuits in a freely-behaving animal. The combination of low power control logic circuits, including a reed switch and dual-coil wireless power transfer platform, provides powerful capabilities for the dissection of discrete brain circuits in wide spatial coverage for mouse activity. The

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8

Mishra, Sanhita, Sarat Chandra Swain, and Ritesh Dash. "Switching transient analysis for low voltage distribution cable." Open Engineering 12, no. 1 (2022): 29–37. http://dx.doi.org/10.1515/eng-2022-0004.

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Abstract Low voltage cable is primarily connected from the transmission system to several household applications. It is quite common that switching transient in the power system during the energization of the high voltage and low voltage cables have a very crippling effect on the cable as well as the power system components. Hence, an experiment has been performed in the laboratory with a low voltage cable-connected motor system. The experimental results have been validated in the simulation platform, and they are capable of predicting the transient behavior during power cable energization. Th

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9

McPherson, B., B. Passmore, P. Killeen, D. Martin, A. Barkley, and T. McNutt. "Package design and development of a low cost high temperature (250°C), high current (50+A), low inductance discrete power package for advanced Silicon Carbide (SiC) and Gallium Nitride (GaN) devices." International Symposium on Microelectronics 2013, no. 1 (2013): 000592–97. http://dx.doi.org/10.4071/isom-2013-wa63.

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The demands for high-performance power electronics systems are rapidly surpassing the power density, efficiency, and reliability limitations defined by the intrinsic properties of silicon-based semiconductors. The advantages of post silicon materials, including Silicon Carbide (SiC) and Gallium Nitride (GaN), are numerous, including: high temperature operation, high voltage blocking capability, extremely fast switching, and superior energy efficiency. These advantages, however, are severely limited by conventional power packages, particularly at temperatures higher than 175°C and &gt;100 k

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10

Roberts, J., A. Mizan, and L. Yushyna. "Optimized High Power GaN Transistors." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2015, HiTEN (2015): 000195–99. http://dx.doi.org/10.4071/hiten-session6-paper6_1.

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GaN transistors intended for use at 600–900 V and that are capable of providing of 30–100 A are being introduced this year. These devices have a substantially better switching Figure-of-Merit (FOM) than silicon power switches. Rapid market acceptance is expected leading to compound annual growth rates of 85 %. However these devices present new packaging challenges. Their high speed combined with the very high current being switched demands that very low inductance packaging must be combined with highly controlled drive circuitry. While convention, and the usually vertical power device die stru

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