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Journal articles on the topic 'Discrete power switching devices'

Author: Grafiati

Published: 6 September 2023

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1

Nechay, Bettina, Megan Snook, Harold Hearne, et al. "High-Yield 4H-SiC Thyristors for Wafer-Scale Interconnection." Materials Science Forum 717-720 (May 2012): 1171–74. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1171.

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Modern power conditioning systems require large active area devices which can support high currents. Though the breakdown and thermal properties of SiC make it an excellent choice for power switching applications, active area size is currently limited due to material and processing defects. One alternative is to parallel discrete diced die to achieve large active areas. However, this increases cost and complexity through dicing, soldering, and forming multiple wire bonds. Furthermore, paralleling discrete devices increases package volume/weight and reduces power density. To overcome these issu

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2

Zhang, Wenli, Zhengyang Liu, Fred Lee, Shuojie She, Xiucheng Huang, and Qiang Li. "A Gallium Nitride-Based Power Module for Totem-Pole Bridgeless Power Factor Correction Rectifier." International Symposium on Microelectronics 2015, no. 1 (2015): 000324–29. http://dx.doi.org/10.4071/isom-2015-wp11.

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The totem-pole bridgeless power factor correction (PFC) rectifier has recently gained popularity for ac-dc power conversion. The emerging gallium nitride (GaN) high-electron-mobility transistor (HEMT), having a small body diode reverse recovery effect and low switching loss, is a promising device for use in the totem-pole approach. The design, fabrication, and thermal analysis of a GaN-based full-bridge multi-chip module (MCM) for totem-pole bridgeless PFC rectifier are introduced in this work. Four cascode GaN devices using the same pair of high-voltage GaN HEMT and low-voltage silicon (Si) p

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Shahed, Md Tanvir, and A. B. M. Harun-Ur Rashid. "An Improved Topology of Isolated Bidirectional Resonant DC-DC Converter Based on Wide Bandgap Transistors for Electric Vehicle Onboard Chargers." International Transactions on Electrical Energy Systems 2023 (March 2, 2023): 1–18. http://dx.doi.org/10.1155/2023/2609168.

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This article proposes an improved topology for an isolated bidirectional resonant DC-DC converter for electric vehicle (EV) onboard chargers. As opposed to the conventional capacitor-inductor-inductor-inductor-capacitor (CLLLC) resonant converter, the proposed converter’s resonant circuit is composed of a capacitor-inductor-inductor-inductor (CLLL) structure, whose inductances, except the capacitor, can be fully integrated with the leakage and mutual inductances of the high-frequency transformer (HF). Therefore, this offers a smaller size, lower costs, minimal power loss, and eventually higher

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Nepsha, Fedor, and Roman Belyaevsky. "Development of Interrelated Voltage Regulation System for Coal Mines Energy Efficiency Improving." E3S Web of Conferences 41 (2018): 03013. http://dx.doi.org/10.1051/e3sconf/20184103013.

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In this paper, the authors propose an algorithm for interrelated voltage regulation in the power supply system of coal mine which allows to provide a normative voltage level and to minimize the level of active power consumption. A feature of the proposed algorithm is a separate consideration of discrete and nondiscrete variables. Nondiscrete variables are represented as a state matrix. The optimization of nondiscrete variables is performed for each state. The algorithm chooses a state with the minimal active power consumption. The obtained values of discrete and nondiscrete variables are trans

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Lu, Xiang, Volker Pickert, Maher Al-Greer, Cuili Chen, Xiang Wang, and Charalampos Tsimenidis. "Temperature Estimation of SiC Power Devices Using High Frequency Chirp Signals." Energies 14, no. 16 (2021): 4912. http://dx.doi.org/10.3390/en14164912.

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Silicon carbide devices have become increasingly popular in electric vehicles, predominantly due to their fast-switching speeds, which allow for the construction of smaller power converters. Temperature sensitive electrical parameters (TSEPs) can be used to determine the junction temperature, just like silicon-based power switches. This paper presents a new technique to estimate the junction temperature of a single-chip silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor (MOSFET). During off-state operation, high-frequency chirp signals below the resonance frequency of the

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Ren, Jie, and Jian She Tian. "Simulation on Multi-Objective Wind Power Integration Using Genetic Algorithm with Adaptive Weight." Advanced Materials Research 986-987 (July 2014): 529–32. http://dx.doi.org/10.4028/www.scientific.net/amr.986-987.529.

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Aiming at problems which were brought by large-scale wind power integration, and the problem of multi-objective reactive power optimization considering the coexistence of discrete variables and continuous variables, a method of simulation based on genetic algorithm with adaptive weight is brought out. A solving thinking presents that capacitor switching and transformer tap adjusting and other discrete equipments are first, and the action sequence of generator and dynamic reactive power compensation (DRPC) devices and other continuous equipments setting follows, which is presented that optimiza

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Kim, Woo Seok, Minju Jeong, Sungcheol Hong, Byungkook Lim, and Sung Il Park. "Fully Implantable Low-Power High Frequency Range Optoelectronic Devices for Dual-Channel Modulation in the Brain." Sensors 20, no. 13 (2020): 3639. http://dx.doi.org/10.3390/s20133639.

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Wireless optoelectronic devices can deliver light to targeted regions in the brain and modulate discrete circuits in an animal that is awake. Here, we propose a miniaturized fully implantable low-power optoelectronic device that allows for advanced operational modes and the stimulation/inhibition of deep brain circuits in a freely-behaving animal. The combination of low power control logic circuits, including a reed switch and dual-coil wireless power transfer platform, provides powerful capabilities for the dissection of discrete brain circuits in wide spatial coverage for mouse activity. The

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Mishra, Sanhita, Sarat Chandra Swain, and Ritesh Dash. "Switching transient analysis for low voltage distribution cable." Open Engineering 12, no. 1 (2022): 29–37. http://dx.doi.org/10.1515/eng-2022-0004.

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Abstract Low voltage cable is primarily connected from the transmission system to several household applications. It is quite common that switching transient in the power system during the energization of the high voltage and low voltage cables have a very crippling effect on the cable as well as the power system components. Hence, an experiment has been performed in the laboratory with a low voltage cable-connected motor system. The experimental results have been validated in the simulation platform, and they are capable of predicting the transient behavior during power cable energization. Th

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McPherson, B., B. Passmore, P. Killeen, D. Martin, A. Barkley, and T. McNutt. "Package design and development of a low cost high temperature (250°C), high current (50+A), low inductance discrete power package for advanced Silicon Carbide (SiC) and Gallium Nitride (GaN) devices." International Symposium on Microelectronics 2013, no. 1 (2013): 000592–97. http://dx.doi.org/10.4071/isom-2013-wa63.

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The demands for high-performance power electronics systems are rapidly surpassing the power density, efficiency, and reliability limitations defined by the intrinsic properties of silicon-based semiconductors. The advantages of post silicon materials, including Silicon Carbide (SiC) and Gallium Nitride (GaN), are numerous, including: high temperature operation, high voltage blocking capability, extremely fast switching, and superior energy efficiency. These advantages, however, are severely limited by conventional power packages, particularly at temperatures higher than 175°C and &gt;100 k

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Roberts, J., A. Mizan, and L. Yushyna. "Optimized High Power GaN Transistors." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2015, HiTEN (2015): 000195–99. http://dx.doi.org/10.4071/hiten-session6-paper6_1.

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GaN transistors intended for use at 600–900 V and that are capable of providing of 30–100 A are being introduced this year. These devices have a substantially better switching Figure-of-Merit (FOM) than silicon power switches. Rapid market acceptance is expected leading to compound annual growth rates of 85 %. However these devices present new packaging challenges. Their high speed combined with the very high current being switched demands that very low inductance packaging must be combined with highly controlled drive circuitry. While convention, and the usually vertical power device die stru

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Zhang, Liqi, Suxuan Guo, Pengkun Liu, and Alex Q. Huang. "Comparative Evaluation and Analysis of Gate Driver Impacts on a SiC MOSFET-Gate Driver Integrated Power Module." International Symposium on Microelectronics 2017, no. 1 (2017): 000247–51. http://dx.doi.org/10.4071/isom-2017-wa35_023.

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Abstract SiC MOSFET-gate driver integrated power module is proposed to provide ultra-low stray inductance compared to traditional TO-247 or TO-220 packages. Kelvin connection eliminates the common source stray inductance and zero external gate resistor enables faster switching. This module can be operated at MHz switching frequency for high power applications with lower switching losses than discrete packages. Two different gate drivers and two different SiC MOSFETs are grouped and integrated into three integrated power modules. Comparative evaluation and analysis of gate driver impacts on swi

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12

Zhou, Han, Guoxu Liu, Jianhua Zeng, et al. "Recent Progress of Switching Power Management for Triboelectric Nanogenerators." Sensors 22, no. 4 (2022): 1668. http://dx.doi.org/10.3390/s22041668.

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Based on the coupling effect of contact electrification and electrostatic induction, the triboelectric nanogenerator (TENG) as an emerging energy technology can effectively harvest mechanical energy from the ambient environment. However, due to its inherent property of large impedance, the TENG shows high voltage, low current and limited output power, which cannot satisfy the stable power supply requirements of conventional electronics. As the interface unit between the TENG and load devices, the power management circuit can perform significant functions of voltage and impedance conversion for

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13

Ketabi, A., M. Khoshkholgh, and R. Feuillet. "A New Approach to Nonsinusoidal Steady-State Power System Analysis." Mathematical Problems in Engineering 2009 (2009): 1–18. http://dx.doi.org/10.1155/2009/584637.

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A new analysis method using wavelet domain for steady-state operating condition of power system is developed and introduced. Based on wavelet-Galerkin theory, the system components such as resistor, inductor, capacitor, transmission lines, and switching devices are modeled in discrete wavelet domain for the purpose of steady-state analysis. To solve system equations, they are transferred to wavelet domain by forming algebraic matrix-vector relations using the wavelet transform coefficients and the equivalent circuit is thus built for system simulation. After describing the new algorithm, two-c

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14

Langmaack, Niklas, Florian Lippold, Daiyi Hu, and Regine Mallwitz. "Analysing Efficiency and Reliability of High Speed Drive Inverters Using Wide Band Gap Power Devices." Machines 9, no. 12 (2021): 350. http://dx.doi.org/10.3390/machines9120350.

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Within the project ‘ARIEL’ an electrical turbo compressor unit for fuel cell applications is deeply investigated. The necessary drive inverter is especially designed for high fundamental frequency and high switching frequency to cope with the requirements of the implemented electrical machine. This paper presents investigations on the inverter’s efficiency and its prospective lifetime at different stages of the development. In the design process different wide band gap power semiconductor devices in discrete packages are evaluated in terms of the achievable power density and efficiency, both b

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15

Wang, Baochao, Shili Dong, Shanlin Jiang, et al. "A Comparative Study on the Switching Performance of GaN and Si Power Devices for Bipolar Complementary Modulated Converter Legs." Energies 12, no. 6 (2019): 1146. http://dx.doi.org/10.3390/en12061146.

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The commercial mature gallium nitride high electron mobility transistors (GaN HEMT) technology has drawn much attention for its great potential in industrial power electronic applications. GaN HEMT is known for low on-state resistance, high withstand voltage, and high switching frequency. This paper presents comparative experimental evaluations of GaN HEMT and conventional Si insulated gate bipolar transistors (Si IGBTs) of similar power rating. The comparative study is carried out on both the element and converter level. Firstly, on the discrete element level, the steady and dynamic character

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16

Gui, Handong, Zheyu Zhang, Ruirui Chen, et al. "Gate Drive Technology Evaluation and Development to Maximize Switching Speed of SiC Discrete Devices and Power Modules in Hard Switching Applications." IEEE Journal of Emerging and Selected Topics in Power Electronics 8, no. 4 (2020): 4160–72. http://dx.doi.org/10.1109/jestpe.2019.2937855.

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Raychaudhuri, A., Z. X. Yan, M. J. Deen, and A. C. Seabaugh. "Hysteresis in resonant tunneling diode based multiple-peak driver device for multivalued SRAM cells: analysis, simulation, and experimental results." Canadian Journal of Physics 70, no. 10-11 (1992): 993–1000. http://dx.doi.org/10.1139/p92-159.

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This paper describes results of our investigation on the hysteresis phenomenon observed in multiple-peak resonant tunneling devices based on a series combination of resonant tunneling diodes (RTDs). We have modelled this hysteresis by assuming that when one of the diodes in the series combination is switching from its prenegative differential resistance (NDR) region to its post-NDR region or back, the others are acting as a combined load to it. Our analytical model based on a load-line analysis with a piecewise-linear approximation for the RTD I–V curve brings out the salient features of hyste

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18

Tarchała, Grzegorz, and Teresa Orłowska-Kowalska. "Discrete Sliding Mode Speed Control of Induction Motor Using Time-Varying Switching Line." Electronics 9, no. 1 (2020): 185. http://dx.doi.org/10.3390/electronics9010185.

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Sliding mode control (SMC) of electric drives constitutes a very popular control method for nonlinear multivariable and time-varying systems, e.g., induction motor (IM) drives. Nowadays, IM are the most popular electrical machines (EM) applied in many industrial applications as motion control devices, including electrical and hybrid vehicles. Nowadays, the control systems of EM are mostly realized using digital techniques (microprocessors and microcontrollers). Therefore, all control algorithms should be discretized or the whole control system should be designed in the discrete-time domain. Th

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19

Zeng, Xiang-jun, Xu Yang, and Zhao-an Wang Xi'an. "Analysis of Capacitive and Inductive Coupling inside Hybrid Integrated Power Electronic Module." Journal of Microelectronics and Electronic Packaging 1, no. 3 (2004): 169–75. http://dx.doi.org/10.4071/1551-4897-1.3.169.

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Electromagnetic compatibility has to be given enough attention in the design of hybrid Integrated Power Electronic Module (IPEM) due to the sharply decreased distances between power devices and the control/driving circuits as compared to such distances for conventional power electronic equipment built with discrete devices. The high dν/dt, di/dt and high frequency parasitic ringing emanating from the switching circuit can cause serious EMI within the control/driving circuit due to cross-coupling. This paper analyzes the capacitive and inductive cross-coupling problems inside an IPEM. Finite El

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20

Kim, Ui-Jin. "Design of a Rectangular Pickup Coil Fabricated on a PCB Using WBG Power Semiconductor in Discrete Package." Applied Sciences 11, no. 5 (2021): 2290. http://dx.doi.org/10.3390/app11052290.

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Power semiconductors based on wide bandgap (WBG) devices are capable of fast switching and have low on-resistance. Accordingly, a fast sensor with a higher bandwidth is required for circuit inspection based on switch current measurements. Thus, it is necessary to have a current sensor in the printed circuit board (PCB) circuit for diagnosis and protection of the surface mount device (SMD) type circuit system. Accordingly, a pickup coil with the advantages of a high degree of sensor configuration freedom, wide bandwidth, and low cost can be a good alternative. This study analyzes the influence

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Fonseca, R. M. M., O. Leeuwenburgh, E. Della Rossa, P. M. Van den Hof, and J. D. D. Jansen. "Ensemble-Based Multiobjective Optimization of On/Off Control Devices Under Geological Uncertainty." SPE Reservoir Evaluation & Engineering 18, no. 04 (2015): 554–63. http://dx.doi.org/10.2118/173268-pa.

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Summary We consider robust ensemble-based (EnOpt) multiobjective production optimization of on/off inflow-control devices (ICDs) for a sector model inspired by a real-field case. The use of on/off valves as optimization variables leads to a discrete control problem. We propose a reparameterization of such discrete controls in terms of switching times (i.e., we optimize the time at which a particular valve is either open or closed). This transforms the discrete control problem into a continuous control problem that can be efficiently handled with the EnOpt method. In addition, this leads to a s

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Yun, Minghui, Miao Cai, Daoguo Yang, Yiren Yang, Jing Xiao, and Guoqi Zhang. "Bond Wire Damage Detection Method on Discrete MOSFETs Based on Two-Port Network Measurement." Micromachines 13, no. 7 (2022): 1075. http://dx.doi.org/10.3390/mi13071075.

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Bond wire damage is one of the most common failure modes of metal-oxide semiconductor field-effect transistor (MOSFET) power devices in wire-welded packaging. This paper proposes a novel bond wire damage detection approach based on two-port network measurement by identifying the MOSFET source parasitic inductance (LS). Numerical calculation shows that the number of bond wire liftoffs will change the LS, which can be used as an effective bond wire damage precursor. Considering a power MOSFET as a two-port network, LS is accurately extracted from frequency domain impedance (Z−parameter) using a

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Veliadis, Victor. "SiC Mass Commercialization: Present Status and Barriers to Overcome." Materials Science Forum 1062 (May 31, 2022): 125–30. http://dx.doi.org/10.4028/p-6zcw3b.

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In an increasingly electrified technology driven world, power electronics is central to the entire clean energy manufacturing economy. Silicon (Si) power devices have dominated power electronics due to their low cost volume production, excellent starting material quality, ease of fabrication, and proven reliability. Although Si power devices continue to improve, they are approaching their operational limits primarily due to their relatively low bandgap, critical electric field, and thermal conductivity that result in high conduction and switching losses, and poor high temperature performance.

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Khan, Salma, Syed Azeemuddin, and Mohammed Arifuddin Sohel. "Proteretic device: modelling and implementation in electronics and optical domain." Semiconductor Science and Technology 37, no. 5 (2022): 055021. http://dx.doi.org/10.1088/1361-6641/ac6200.

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Abstract This paper discusses the phenomena of proteresis, commonly known as inverse hysteresis, and the various methods to implement it. Proteresis generates an advanced response when compared to hysteresis, which improves the system’s speed, maintaining the noise immunity intact. This feature of proteresis is seen in multiple naturally occurring phenomena. The paper implements proteresis in domains of electronics and optics, keeping in view essential constraints like area, power, throughput, and speed. The electronic domain consists of two models, one using CMOS circuits and the other using

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Fan, Youpeng, Minmin Xu, Yibing Jie, Jinliang Wang, Xiao Rong, and Nina Lv. "Analysis of Chaos in Three-Level Full-Bridge Converter." Journal of Physics: Conference Series 2549, no. 1 (2023): 012021. http://dx.doi.org/10.1088/1742-6596/2549/1/012021.

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Abstract As an important part in the active magnetic bearing, its performance has great impact on the active magnetic bearing system. Most of the active magnetic bearing systems use current-mode switching power amplifiers. The full-bridge converter is the main topological structure of switching power amplifier for magnetic bearings. It mainly supplies current to the coil so it can offer enough fore to the rotor. It has abundant nonlinear phenomena as the power conversion device of it lies in the nonlinear region. This paper chooses the proportionally controlled three-level switching power ampl

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Okamura, Katsuya, Keiichi Ise, Masayoshi Wake, Yutaka Osawa, Koichi Takaki, and Ken Takayama. "Characterization of SiC JFET in Novel Packaging for 1 MHz Operation." Materials Science Forum 717-720 (May 2012): 1029–32. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1029.

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A high power discrete SiC-JFET package for accelerator applications has been developed and tested. Successful operation with a dc voltage of 1 kV, a drain current of 27 A, and a repetition rate of 1 MHz was confirmed. Thermal analysis was carefully attempted. The heat dissipation capacity of 235 W with a water-cooled heat sink and the thermal resistance from its junction to outer-surface of 0.56 K/W were demonstrated. These results exhibit the SiC-JFET is a promising device for a switching power supply in future digital accelerators.

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Le, Duy, Duong Bui, Cao Ngo, and Anh Le. "FLISR Approach for Smart Distribution Networks Using E-Terra Software—A Case Study." Energies 11, no. 12 (2018): 3333. http://dx.doi.org/10.3390/en11123333.

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A smart grid concept has been defined in recent years, which emphasizes the importance on smart protection and measurement devices, reliable data communication and high security, optimal energy management system, and fault detection, location, isolation and service restoration (FLISR) of distribution networks (DNs). The main objectives of the FLISR approach are to achieve fast fault processing time, reduce the minimum number of interrupted customers, and improve the power supply reliability of the distribution. The conventional FLISR approach is to use signals of fault indicators (FIs) with di

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Nazemi, Adel, Omid Salari, Mohammad Tavakoli Bina, Masoud Kazemi, and Bahman Eskandari. "Predictive Control for Reduced Structure Multilevel Converters: Experimenting on a Seven Level Packed U-Cell." International Journal of Power Electronics and Drive Systems (IJPEDS) 7, no. 2 (2016): 568. http://dx.doi.org/10.11591/ijpeds.v7.i2.pp568-582.

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Recently, a branch of multilevel converters is emerged, in which their ‘reduced structure’ topologies use lower number of devices compared to the available topologies. To get a cost efficient converter, lower number of components as well as high quality waveforms, multilevel converters with a ‘reduced structure’ (MCRS) are suitable for high/medium power systems. Also, utilizing the fast microprocessors available today, applications of predictive control in power converters are of very powerful and attractive alternatives to classical controllers. This paper proposes a finite control set model-

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29

Wang, Lei, Chunmei Xu, Lijun Diao, Jie Chen, Ruichang Qiu, and Peizhen Wang. "Online Open Circuit Fault Diagnosis for Rail Transit Traction Converter Based on Object-Oriented Colored Petri Net Topology Reasoning." Mathematical Problems in Engineering 2016 (2016): 1–10. http://dx.doi.org/10.1155/2016/1842131.

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For online open circuit fault diagnosis of the traction converter in rail transit vehicles, conventional approaches depend heavily on component parameters and circuit layouts. For better universality and less parameter sensitivity during the diagnosis, this paper proposes a novel topology analysis approach to diagnose switching device open circuit failures. During the diagnosis, the topology is analyzed with fault reasoning mechanism, which is based on object-oriented Petri net (OOCPN). The OOCPN model takes in digitalized current inputs as fault signatures, and dynamical transitions between d

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Ding, Xiao Jun, En Dian Hu, Shi Gao Hu, and Tao Zhao. "Switched Reluctance Drive System Design Based on DSP." Applied Mechanics and Materials 577 (July 2014): 401–7. http://dx.doi.org/10.4028/www.scientific.net/amm.577.401.

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A switched reluctance motor drive (SRD) is designed in this paper. This system has the characteristics of simple structure and reliable performance. It is designed based on 3 phase, 12/8 pole, 2.2 KW switched reluctance motor (SRM). The TMS320LF2407A is chosen as the core controller. The type of half bridge is adopted in the main power converter circuit, and IGBT is used as the main power switching component and discrete components is used as the main power switch converter device driver circuit. Experimental results show that the designed system can be run steadily under rated load conditions

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Mejbri, Hanen, Kaiçar Ammous, Slim Abid, Hervé Morel, and Anis Ammous. "Bi-objective sizing optimization of power converter using genetic algorithms." COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering 33, no. 1/2 (2013): 398–422. http://dx.doi.org/10.1108/compel-03-2012-0029.

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Purpose – This paper aims to focus on the trade-off between losses and converter cost. Design/methodology/approach – The continual development of power electronic converters, for a wide range of applications such as renewable energy systems (interfacing photovoltaic panels via power converters), is characterized by the requirements for higher efficiency and lower production costs. To achieve such challenging objectives, a computer-aided design optimization based on genetic algorithms is developed in Matlab environment. The elitist non-dominated sorting genetic algorithm is used to perform sear

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Tovbaev, A. N., M. Ibadullayev, and S. I. Norboyev. "Analysis of subharmonic oscillations in three-phase Ferroresonant circuits with bias." Journal of Physics: Conference Series 2388, no. 1 (2022): 012060. http://dx.doi.org/10.1088/1742-6596/2388/1/012060.

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Abstract In the theory of nonlinear electrical circuits, the analysis of physical processes occurring in three-phase Ferroresonant circuits during excitation of subharmonic oscillations (SHO) of the second order is of particular importance in the design and creation of various converter devices. From the point of view of creating multi-phase secondary power sources (phase-discrete devices, frequency dividers, switching elements, automation and relay protection devices, etc.), the study of second-order SHO excitation in three-phase Ferro resonant circuits with bias is of greatest interest. The

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Lisovenko, V., D. Lisovenko, and O. Bazyk. "LED MODULE WITH ELECTRONIC ILLUMINATION CONTROL." Collection of scientific works of Odesa Military Academy 1, no. 12 (2019): 146–54. http://dx.doi.org/10.37129/2313-7509.2019.12.1.146-154.

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Many energy saving tasks can be solved thanks to the current advances in LED technology in the production of semiconductor light sources. Modern production of solid-state LEDs guarantees high-precision compliance with the calculated design parameters of illumination devices. This opens up wide opportunities for high-precision control of the lighting parameters of a multicomponent module: light power, a directional pattern and a distribution of illumination. Today, the methodical issues of the preliminary modeling of LED illumination devices with the given parameters are fundamentally solved. T

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Suroso, Suroso, Daru Tri Nugroho, Abdullah Nur Azis, and Toshihiko Noguchi. "Simplified five-level voltage source inverter with level-phase-shifted carriers based modulation technique." Indonesian Journal of Electrical Engineering and Computer Science 13, no. 2 (2019): 461. http://dx.doi.org/10.11591/ijeecs.v13.i2.pp461-468.

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<p>A simplified circuit topology of the five-level pulse width modulation (PWM) inverter for DC-AC power conversion with no-isolated DC voltage sources and reduced switching device number is presented in this paper. The inverter circuit is based on the three-level H-bridge inverter configuration. The developed five-level inverter needs only five controlled power switches and four isolated gate drive circuits. Furthermore, the proposed topology does not require bidirectional power semiconductor controlled switches, hence a conventional discrete power MOSFETs or IGBTs can be used to build

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Wang, Lei, Hongjun Zhang, Hui Hu, Liping Hao, and Wei Xu. "Research on real time simulation modeling method of large scale MMC electromagnetic transient." Journal of Physics: Conference Series 2108, no. 1 (2021): 012030. http://dx.doi.org/10.1088/1742-6596/2108/1/012030.

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Abstract Modular multilevel converter (MMC) contains a large number of power electronic switching devices. The modeling method based on switching circuit model needs a lot of resources and the simulation speed is slow, so it is difficult to realize large-scale real-time simulation of electromagnetic transient. A MMC electromagnetic transient numerical modeling method based on ideal transformer model (ITM) is presented. Firstly, the MMC system is divided into the main circuit network and the sub module group network by ITM method, and the error caused by decoupling delay in serial and parallel

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Wang, Xue. "Active-reactive power collaborative optimization model of electrical interconnection system based on deep learning under the goal of “carbon neutrality”." Journal of Physics: Conference Series 2360, no. 1 (2022): 012032. http://dx.doi.org/10.1088/1742-6596/2360/1/012032.

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With the goal of carbon neutralization put forward, new energy units have gradually become the main power supply, and its volatility has brought great challenges to the control and optimization of the system, especially the distribution network. In order to solve the reactive power problem caused by the high proportion of renewable energy connected to the distribution network, a source network load storage centralized optimal dispatching model considering reactive power optimization and multi energy collaborative interaction is proposed. The model aims at the optimal operation cost, minimum ne

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Pirozhenko, Andrii, Yevhenii Modlo, Ruslan Shaida, Viktor Batarieiev, Mykola Zhukov, and Mykhailo Drukker. "Principle of Organization for Laboratory Stand of the Electric Drive with a Real Regulatory System No Time Scaling." SHS Web of Conferences 100 (2021): 06002. http://dx.doi.org/10.1051/shsconf/202110006002.

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The existing practical training of specialists in the field of the electric drive is recognized as insufficient, not allowing them to conduct independently a complex of adjustment works or works on elimination of refusals. All known virtual methods of research of electric drives are scaled in time therefore at the trained skills on use of the measuring and registering devices during the work on real installation don't develop, and also skills on work with real knots of control systems for control of the set drive modes. We propose a stand consisting of a real system of regulation and the model

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Fairchild, M. Ray, Carl W. Berlin, D. H. R. Sarma, Ralph S. Taylor, Han S. Lee, and Steven E. Staller. "Thin-film High Voltage Capacitors for Hybrid Electric Vehicle Inverter Applications." International Symposium on Microelectronics 2012, no. 1 (2012): 001116–23. http://dx.doi.org/10.4071/isom-2012-thp34.

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The propulsion system in hybrid electric vehicles (HEVs) requires an alternating current (AC) electric motor in combination with an internal combustion engine. When the HEV is being propelled by the AC motor, the power for the motor is provided by batteries whose direct current (DC) voltage is chopped into an AC waveform via an electronic device called a power inverter. Capacitors known as DC bulk capacitors are placed between the battery and the inverter to “decouple” the AC switching inverter from the power source. Power electronics inverters use several large high voltage discrete DC bulk c

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Hui, S. Y. R., and S. Morrall. "Generalised associated discrete circuit model for switching devices." IEE Proceedings - Science, Measurement and Technology 141, no. 1 (1994): 57–64. http://dx.doi.org/10.1049/ip-smt:19949591.

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Cheng, H.-C., Y.-H. Shen, and W.-H. Chen. "Parasitic extraction and power loss estimation of power devices." Journal of Mechanics 37 (December 19, 2020): 134–48. http://dx.doi.org/10.1093/jom/ufaa022.

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Abstract This study aims to characterize the switching transients and power losses of silicon (Si) power metal–oxide–semiconductor field-effect transistor (MOSFET) in an SOT-227 package (hereinafter named “power MOSFET package”) and Si power MOSFET-based three-phase MOSFET inverter during load cycles through numerical modeling and experimental validation. The three-phase inverter comprises six power MOSFET packages as switches for brushless direct current motor drive. First of all, three-dimensional electromagnetic analyses are performed to extract the parasitic parameters of these two power d

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Kang, Ey Goo. "A Study on 400V Sized Trench Power Semiconductor for Smart Power ICs." Advanced Materials Research 712-715 (June 2013): 1771–74. http://dx.doi.org/10.4028/www.scientific.net/amr.712-715.1771.

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Power MOSFET is develop in power savings, high efficiency, small size, high reliability, fast switching, low noise. Power MOSFET can be used high-speed switching transistors devices. Recently attention to the motor and the application of various technologies. Power MOSFET is devices the voltage-driven approach switching devices are design to handle on large power, power supplies, converters, motor controllers. In this paper, design the 400 V Planar type, and design the trench type for realization of low on-resistance. Trench Power MOSFET Vth : 3.25 V BV : 484 V Ron : 0.0395 Ohm has been optimi

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Chow, T. Paul. "SiC Bipolar Power Devices." MRS Bulletin 30, no. 4 (2005): 299–304. http://dx.doi.org/10.1557/mrs2005.77.

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AbstractThe successful commercialization of unipolar Schottky rectifiers in the 4H polytype of silicon carbide has resulted in a market demand for SiC high-power switching devices. This article reviews recent progress in the development of high-voltage 4H-SiC bipolar power electronics devices.We also present the outstanding material and processing challenges, reliability concerns, and future trends in device commercialization.

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Hikita, Masahiro, Hiroaki Ueno, Hisayoshi Matsuo, et al. "Status of GaN-Based Power Switching Devices." Materials Science Forum 600-603 (September 2008): 1257–62. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.1257.

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State-of-the-art technologies of GaN-based power switching transistors are reviewed, in which normally-off operation and heat spreading as technical issues. We demonstrate a new operation principle of GaN-based normally-off transistor called Gate Injection Transistor (GIT). The GIT utilizes hole-injection from p-AlGaN to AlGaN/GaN hetero-junction which increases electron density in the depleted channel resulting in dramatic increase of the drain current owing to conductivity modulation. The fabricated GIT on Si substrate exhibits the threshold voltage of +1.0V with high maximum drain current o

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Rabkowski, Jacek. "SiC Power Devices in Impedance Source Converters." Materials Science Forum 897 (May 2017): 701–4. http://dx.doi.org/10.4028/www.scientific.net/msf.897.701.

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This paper discusses issues related to application of SiC power devices to new family of power converters. Impedance source converters show unique feature, buck boost characteristics due to specific impedance network. Passive elements of this network may be seriously reduced with the switching frequency increase, possible with fast-switching SiC transistors. On the other hand, switching conditions of the power devices are more severe than in traditional voltage-source or current-source converters. These issues are discussed on the base of the 6kVA/100kHz quasi-Z-source inverter example.

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Ma, Chao-Tsung, and Zhen-Huang Gu. "Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications." Micromachines 12, no. 1 (2021): 65. http://dx.doi.org/10.3390/mi12010065.

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Wide-bandgap (WBG) material-based switching devices such as gallium nitride (GaN) high electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are considered very promising candidates for replacing conventional silicon (Si) MOSFETs for various advanced power conversion applications, mainly because of their capabilities of higher switching frequencies with less switching and conduction losses. However, to make the most of their advantages, it is crucial to understand the intrinsic differences between WBG- and Si-based switchin

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Ma, Chao-Tsung, and Zhen-Huang Gu. "Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications." Micromachines 12, no. 1 (2021): 65. http://dx.doi.org/10.3390/mi12010065.

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Wide-bandgap (WBG) material-based switching devices such as gallium nitride (GaN) high electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are considered very promising candidates for replacing conventional silicon (Si) MOSFETs for various advanced power conversion applications, mainly because of their capabilities of higher switching frequencies with less switching and conduction losses. However, to make the most of their advantages, it is crucial to understand the intrinsic differences between WBG- and Si-based switchin

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Ivakhno, Volodymyr, Volodymyr V. Zamaruiev, and Olga Ilina. "Estimation of Semiconductor Switching Losses under Hard Switching using Matlab/Simulink Subsystem." Electrical, Control and Communication Engineering 2, no. 1 (2013): 20–26. http://dx.doi.org/10.2478/ecce-2013-0003.

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AbstractThe conventional tools for the system level simulation of the switch-mode power converters (for example, MATLAB/SIMILINK) allow simulating the behavior of a power converter jointly operating with the control system in a closed automatic regulation system. This simulation tools either represent semiconductor devices as ideal switches or implement the simplest models based on volt-ampere characteristics of standard types of semiconductor devices for conducting loss estimation. This fact makes direct calculation of dynamic power losses in the semiconductor devices impossible. The MATLAB/S

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Chougale, Mahesh Y., Swapnil R. Patil, Sandeep P. Shinde, et al. "Memristive switching in ionic liquid–based two-terminal discrete devices." Ionics 25, no. 11 (2019): 5575–83. http://dx.doi.org/10.1007/s11581-019-03082-6.

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Chow, T. Paul. "SiC and GaN High-Voltage Power Switching Devices." Materials Science Forum 338-342 (May 2000): 1155–60. http://dx.doi.org/10.4028/www.scientific.net/msf.338-342.1155.

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Valentine, Nathan, Diganta Das, Bhanu Sood, and Michael Pecht. "Failure Analyses of Modern Power Semiconductor Switching Devices." International Symposium on Microelectronics 2015, no. 1 (2015): 000690–95. http://dx.doi.org/10.4071/isom-2015-tha56.

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Power semiconductor switches such as Power Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) and Insulated Gate Bipolar Transistors (IGBTs) continue to be a leading cause of failure in power electronics systems. With the continued expansion of the power electronics market, reliable switching devices are of utmost importance in maintaining reliable operation of high power electronic systems. An overview of the failure mechanisms of power semiconductor switches identified by two failure analyses at CALCE is presented. The specific applications of power semiconducting switches have a w

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