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Journal articles on the topic 'Dislocations'

Author: Grafiati

Published: 4 June 2021

Last updated: 25 July 2025

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1

Shetty, Sanath Kumar, Lawrence J. Mathias, H. Ravindranath Rai, P. Nirmal Babu, Raj Sankar N. R., and Vinay Kumar C. "SIMULTANEOUS BILATERAL ANTERIOR DISLOCATION OF THE SHOULDER WITH FRACTURES OF THE GREATER TUBEROSITY FOLLOWING TRAUMA- A CASE REPORT." Journal of Health and Allied Sciences NU 04, no. 01 (2014): 129–30. http://dx.doi.org/10.1055/s-0040-1703750.

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Abstract:Simultaneous bilateral shoulder dislocations are usually posterior with anterior dislocations1 being rare and simultaneous anterior shoulder dislocations with fractures of the greater tuberosity5 being even more rare usually associated with trauma or seizures2,3 . Here we present a rare case of simultaneous bilateral anterior dislocation of the shoulder with fractures of the greater tuberosity following an unusual injury mechanism which was treated surgically.

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2

Mohiuddin, Mohammed Jalal, Hashmi Syed Salman Hamid, and Shaik Ajaz. "SIMULTANEOUS BILATERAL SHOULDER DISLOCATION: A CASE REPORT." International Journal of Medical Sciences and Pharma Research 1, no. 1 (2015): 1–4. http://dx.doi.org/10.22270/ijmspr.v1i1.1.

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Introduction: Bilateral shoulder dislocations are relatively uncommon. Bilateral shoulder dislocationwas first described in 1902, because of muscular contractions in camphor overdose. Among thebilateral shoulder dislocation posterior are most common usually following convulsions or electricshocks. Simultaneous bilateral anterior dislocations of shoulder following trauma is a rareoccurrence. Case Report: A 28 year old male presented to emergency department with history offall on outstretched hand. He complained of pain and difficulty in moving both the shoulders. Onclinical examination, patient

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3

Wang shumin, He Xinfu, and Dou Yankun. "Simulation Study on Edge Dislocation Motion and Its Interaction with Dislocation Loop in Pure V and TiVTa Alloy." Acta Physica Sinica 74, no. 7 (2025): 0. https://doi.org/10.7498/aps.74.20241757.

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In this paper, the motion of edge dislocations and the interaction between edge dislocations and dislocation loops in pure V and TiVTa alloy were simulated. The aim was to reveal the influence of the existence of <111> dislocation loops, which are dominant in pure V, and <100> dislocation loops, which are dominant in TiVTa alloy, on the irradiation properties of materials and the differences between the irradiation properties influenced by the two types of dislocation loops. Edge dislocations and <100> loops and <111> loops with different sizes were introduced into pure

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4

Ibrahim, Halil Kafadar. "Case Report: Floating Elbow with Posterior Shoulder Dislocation." Open Journal of Orthopedics and Rheumatology 2, no. 1 (2017): 015–17. https://doi.org/10.17352/pjor.000009.

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Shoulder dislocations are the most common joint dislocations (%50). Only 2 to 4 percent of these dislocations are posterior dislocations. Posterior dislocation of the shoulder is a rare and commonly missed injury. Also, combination of the fracture of the humerus with shoulder dislocation is a very rare injury [1-6].

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5

Ning, X. J., and P. Pirouz. "A large angle convergent beam electron diffraction study of the core nature of dislocations in 3C-SiC." Journal of Materials Research 11, no. 4 (1996): 884–94. http://dx.doi.org/10.1557/jmr.1996.0110.

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Dislocations produced by 1300 °C indentation of the silicon-terminated (111) face of 3C-SiC were investigated by transmission electron microscopy. They were all found to be either widely separated partial dislocation pairs, or else, arrays of single partial dislocation half-loops on neighboring parallel slip planes and having the same Burgers vector. It was concluded that in the latter case, each array consisted of leading partial dislocations which had nucleated without accompanying trailing partial dislocations. The core nature of both dissociated dislocations and arrays of single partial di

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6

Marshall, A. F., D. B. Aubertine, W. D. Nix, and P. C. McIntyre. "Misfit dislocation dissociation and Lomer formation in low mismatch SiGe/Si heterostructures." Journal of Materials Research 20, no. 2 (2005): 447–55. http://dx.doi.org/10.1557/jmr.2005.0065.

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Using transmission electron microscopy we observe the dissociation of 60° misfit dislocations at the interface of SiGe/Si multilayers, extending into the substrate for distances of 5.0–7.5 nm. Analysis using elasticity theory shows that this dissociationis the equilibrium configuration for individual 60° misfit dislocations, as it is for 60° mixed dislocations in bulk Si, and that the compressively strained multilayer film serves mainly to position the partial dislocations and stacking fault with respect to the free surface. We observe both undissociated 60° and Lomer edge dislocations after a

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7

Kveder, Vitaly V., Valeri I. Orlov, M. Khorosheva, and Michael Seibt. "Influence of the Dislocation Travel Distance on the DLTS Spectra of Dislocations in Cz-Si." Solid State Phenomena 131-133 (October 2007): 175–82. http://dx.doi.org/10.4028/www.scientific.net/ssp.131-133.175.

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We investigated the development of dislocation-related DLTS spectra in n-CZ-Si crystals with small (about 7.104 cm-2) number of long individual dislocations depending on the distance L that dislocations traveled during deformation at 600oC and on the velocity of dislocations. We found that a typical dislocation-related DLTS signal appeared only when dislocations traveled a significant distance that is more than 150-200μm, and it depended strongly on dislocation velocity. The results were interpreted on the assumption that the DLTS signal corresponds to some core defects and atomic impurities a

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8

Misra, Devi Shanker. "Studies of Dislocations in Type Ib, Type IIa HPHT and CVD Single Crystal Diamonds." Crystals 13, no. 4 (2023): 657. http://dx.doi.org/10.3390/cryst13040657.

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In this review, the X-ray topography results of various types of single crystal diamonds (SCDs) are reported. Dislocations and dislocation bundles are present in all types of SCDs, the only exception being type IIa high-pressure, high-temperature (HPHT) SCDs. The technology of growing HPHT type IIa SCDs has advanced to a level where the samples show almost no dislocations or dislocation bundles. However, very few groups appear to have perfected the process of HPHT growth of type IIa SCDs. There appears to be a characteristic difference in the dislocations present in type Ib HPHT and chemical v

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9

Lauer, Kevin, Martin Herms, Anett Grochocki, and Joachim Bollmann. "Iron Gettering at Slip Dislocations in Czochralski Silicon." Solid State Phenomena 178-179 (August 2011): 211–16. http://dx.doi.org/10.4028/www.scientific.net/ssp.178-179.211.

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The impact of slip dislocations on the interstitial iron distribution in as-grown CZ silicon wafers is investigated by calibrated MWPCD excess charge carrier lifetime measurements, DLTS measurements and measurements of the dislocation density. In regions of high dislocation density low interstitial iron content as well as low lifetime is observed. A linear correlation between dislocation density and interstitial iron content is found. We explain this linear correlation by the thesis that slip dislocations are 60° dislocations, which have adsorbed one iron atom at each dangling bond along the d

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10

Suresh, T. V., D. Naveen, K. Harish, and Ravi M. Daddimani. "Bilateral Asymmetrical Hip Dislocation in a 70-year-old Female: A Rare Case Report." Journal of Orthopedics, Traumatology and Rehabilitation 16, no. 2 (2024): 191–94. https://doi.org/10.4103/jotr.jotr_9_23.

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Abstract Traumatic dislocation of the hip joint is a rare injury representing 2%–5% of all dislocations while bilateral hip dislocation accounts for 1.25% of all hip dislocations. Asymmetrical hip dislocations are even rarer accounting for approximately 0.01%–0.02% of all hip joint dislocations. We are reporting a case of bilateral asymmetrical hip dislocations with left-sided posterior dislocation and right anterior dislocation in a 70-year-old female following a road traffic accident. It is pertinent to thoroughly evaluate the patient on the Advanced Trauma Life Support guidelines. After eva

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11

Mao, Zhigang, Stuart McKeraan, C. Barry Carter, Wei Yang, and Scott A. McPherson. "Weak-Beam Thickness-Fringe Contrast Analysis of Defects in GaN Pyramids." Microscopy and Microanalysis 5, S2 (1999): 736–37. http://dx.doi.org/10.1017/s1431927600017001.

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The possible dislocations and slip systems in the wurtzite structure are the same as in hcp structure [1]. The Burgers vectors of these dislocations are . The dislocations can lie on either the (0001) basal plane or prism planes. The dislocations lie on pyramidal planes. TEM studies have revealed that there are predominately three types of dislocations in a wurtzite GaN epilayer which has not been grown by selective overgrowth (e. g. [2, 3]). The majority of the dislocations are threading dislocations with Burgers vector which appear randomly in the epilayer, they result from the growth errors

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12

Lv, Xin, and Guan-Ting Liu. "Exact Solutions for Interaction of Parallel Screw Dislocations with a Wedge Crack in One-Dimensional Hexagonal Quasicrystal with Piezoelectric Effects." Mathematical Problems in Engineering 2020 (May 29, 2020): 1–15. http://dx.doi.org/10.1155/2020/4797413.

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The purpose of this paper is to consider the interaction between many parallel dislocations and a wedge-shaped crack and their collective response to the external applied generalized stress in one-dimensional hexagonal piezoelectric quasicrystal, employing the complex variable function theory and the conformal transformation method; the problem for the crack is reduced to the solution of singular integral equations, which can be further reduced to solving Riemann–Hilbert boundary value problems. The analytical solutions of the generalized stress field are obtained. The dislocations are subject

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13

Wang, Wen, Dan Wang, and Fu Sheng Han. "Mechanical Behavior of Twinning Induced Plasticity Steel Processed by Warm Forging and Annealing." Defect and Diffusion Forum 385 (July 2018): 21–26. http://dx.doi.org/10.4028/www.scientific.net/ddf.385.21.

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The present study shows that warmly forged and low-temperature annealed twinning induced plasticity (TWIP) steel exhibited very high dislocation density and apparent yield-point phenomenon in addition to very high yield strength. The initial density of dislocations significantly affected the evolution of dislocations during the subsequent tensile deformation. Original high dense dislocations prompted the rapid increase of dislocations, and intensified the complexity of dislocation configurations. All these effects made the twinning deformation weakened but the dislocation deformation enhanced,

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14

Raghothamachar, Balaji, Yu Yang, Jian Qiu Guo, and Michael Dudley. "Analysis of Basal Plane Dislocation Dynamics in 4H-SiC Crystals during High Temperature Treatment." Materials Science Forum 963 (July 2019): 268–71. http://dx.doi.org/10.4028/www.scientific.net/msf.963.268.

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Direct observation of thermal gradient induced motion of basal plane dislocations by in-situ synchrotron X-ray topography imaging of PVT-grown 4H-SiC wafers subject to high temperature treatment has provided an opportunity to analyze the movement of dislocations. Dislocations with Burgers vector along the off-cut [11-20] direction were found to be the only dislocations involved in deformation during heat treatment and the segments of dislocations used for velocity measurements were found to be either pure screw comprised of both Si-and C-core partials or 60° dislocations comprised of purely Si

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15

Wang, Xiaona, Haibin Zhang, Shinong Yan, et al. "The Response Mechanism of Crystal Orientation to Grain Boundary Dislocation under Uniaxial Strain: A Phase-Field-Crystal Study." Metals 12, no. 5 (2022): 712. http://dx.doi.org/10.3390/met12050712.

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An exploration of dislocation microstructure evolution with different misorientation angles was performed using phase field crystal method (PFC). The microcosmic evolution process of grain boundaries under external stress, as well as the corresponding energy curve and stress–strain curve, are analyzed. The relationship between the misorientation angle and the dislocations emission frequency is discussed. Three forms of dislocations reaction on the evolution process of 6°and 10° are analyzed in detail, which are respectively type I semi-annihilation, type II semi-annihilationand full-annihilati

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16

Herring, R. A., P. N. Uppal, S. P. Svensson, and J. S. Ahearn. "TEM characterization of dislocation reduction processes in GaAs/Si." Proceedings, annual meeting, Electron Microscopy Society of America 47 (August 6, 1989): 590–91. http://dx.doi.org/10.1017/s0424820100154925.

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A high density of interfacial dislocations are needed at the GaAs/Si interface to alleviate the 4% lattice mismatch between GaAs and Si. Some remnant dislocations thread through the epilayer and follow the growth interface. Current growth methods are not able to obtain acceptable threading dislocation densities (104 – 105) for devices. Many methods can be used to reduce the number of threading dislocations which include misorienting the substrate to enhance the slip of dislocations on specific [110]{111} planes, annealing during and after growth, and adding strained layer superlattices (SLS's)

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17

Болховитянов, Ю. Б., А. К. Гутаковский, А. И. Дерябин та Л. В. Соколов. "Образование дислокационных пар в гетероструктуре Ge/GeSi/Si(001)". Физика твердого тела 61, № 2 (2019): 284. http://dx.doi.org/10.21883/ftt.2019.02.47127.139.

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AbstractIn the Ge/LTGe/GeSi/Si(001) heterostructures, the GeSi buffer layer remains pseudomorphic in a certain range of the heterostructure parameters and growth regimes, while the Ge film is completely relaxed owing to the edge dislocation network at the Ge/GeSi interface. It has been experimentally shown that, along with edge dislocations, dislocations with the Burgers vectors of the a _0〈100〉-type form. Their formation is caused by the reaction of 60° dislocations with a unidirectional screw component. In this case, if during the buffer layer relaxation the edge dislocations split with the

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18

Sands, CL, N. Daly, JM Karlin, and BL Scurran. "Lateral subtalar dislocation. A literature review and unusual case report." Journal of the American Podiatric Medical Association 82, no. 3 (1992): 162–66. http://dx.doi.org/10.7547/87507315-82-3-162.

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An unusual case of suspected lateral subtalar joint dislocation was reported. A review of the literature found that medial dislocations were reported four times more frequently than lateral dislocations. Half of the cases of subtalar dislocation reviewed here described associated fractures, the incidence of which was higher in lateral dislocations. In both types of dislocations examined, almost half were reduced nonoperatively. In most cases, long-term results of repair of these injuries were considered favorable.

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19

Yakimov, Eugene B. "EBIC Investigations of Deformation Induced Defects in Si." Solid State Phenomena 131-133 (October 2007): 529–34. http://dx.doi.org/10.4028/www.scientific.net/ssp.131-133.529.

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Calculation of relation between the EBIC contrast and the recombination strength for dislocations and quasi-two-dimensional dislocation trails has been carried out taking into account the real values of depletion region width. Using the relations obtained the linear defect density along dislocations and sheet density in dislocation trails are estimated. The results of EBIC investigations of dislocations and dislocation trails in plastically deformed n- and p-Si are analyzed.

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20

Christensen, Tyson C., Thomas L. Sanders, Ayoosh Pareek, Rohith Mohan, Diane L. Dahm, and Aaron J. Krych. "Risk Factors and Time to Recurrent Ipsilateral and Contralateral Patellar Dislocations." American Journal of Sports Medicine 45, no. 9 (2017): 2105–10. http://dx.doi.org/10.1177/0363546517704178.

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Background: Previous studies have reported variable rates of recurrent lateral patellar instability mainly because of limited cohort sizes. In addition, there is currently a lack of information on contralateral patellar instability. Purpose: To evaluate the rate of recurrent ipsilateral patellar dislocations and contralateral patellar dislocations after a first-time lateral patellar dislocation. Additionally, risk factors associated with recurrent dislocations (ipsilateral or contralateral) and time to recurrence were investigated. Study Design: Cohort study; Level of evidence, 3. Methods: Thi

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21

Hirth, John P. "Fine-scale structural defects in dislocation cores." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 4 (1990): 446–47. http://dx.doi.org/10.1017/s0424820100175363.

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We are now entering what one might consider the third phase of study of dislocations by transmission electron microscopy (TEM). The first phase, in the 1950’s and 1960’s led to classifications of dislocation behavior, concepts of low angle boundaries, equilibrium nodes, and dislocation extension, for example. The second, with the advent of the weak-beam technique, produced improved estimates of stacking fault energy on the basis of dislocation extension, revealed more types of extended dislocation configurations, particularly in ordered intermetallic compounds and inorganic compounds, and reve

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22

Takaki, Setsuo, Y. Fujimura, Koichi Nakashima, and Toshihiro Tsuchiyama. "Effect of Dislocation Distribution on the Yielding of Highly Dislocated Iron." Materials Science Forum 539-543 (March 2007): 228–33. http://dx.doi.org/10.4028/www.scientific.net/msf.539-543.228.

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Yield strength of highly dislocated metals is known to be directly proportional to the square root of dislocation density (ρ), so called Bailey-Hirsch relationship. In general, the microstructure of heavily cold worked iron is characterized by cellar tangled dislocations. On the other hand, the dislocation substructure of martensite is characterized by randomly distributed dislocations although it has almost same or higher dislocation density in comparison with heavily cold worked iron. In this paper, yielding behavior of ultra low carbon martensite (Fe-18%Ni alloy) was discussed in connection

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23

Kang, Junyong, Shin Tsunekawa, and Atsuo Kasuya. "Dislocations around precipitates in AlGaN epilayers." Journal of Materials Research 17, no. 8 (2002): 2007–11. http://dx.doi.org/10.1557/jmr.2002.0297.

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Dislocations around precipitates in undoped AlGaN were investigated by transmission electron microscopy. The dislocation images were taken under different diffraction conditions. The dislocations are classified into two types, a pure edge dislocation loop and a close-;coiled helical dislocation. Both types of dislocations were found to depend on the shape and size of the precipitate sources. It is suggested that the pure edge dislocation loop results from homogeneous shear stress and the close-;coiled helical dislocation is caused by spherically symmetrical stress concentration at round ends o

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24

Shapenkov, S., O. Vyvenko, E. Ubyivovk, and V. Mikhailovskii. "Fine core structure and spectral luminescence features of freshly introduced dislocations in Fe-doped GaN." Journal of Applied Physics 131, no. 12 (2022): 125707. http://dx.doi.org/10.1063/5.0080381.

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Dislocations introduced by Vickers tip microindentation of an a-plane free-standing semi-insulating Fe-doped GaN halide vapor phase epitaxy (HVPE) crystal were investigated by means of cathodoluminescence and scanning transmission electron microscopy techniques. Detailed combined analyses of both spectral properties and the core structure of the introduced a-screw dislocations revealed that Fe-doped GaN exhibit not only dislocation-bound emission at ∼3.35 eV of perfect a-screw dislocations previously found in such kind of samples but also luminescent bands at 3.1–3.2 and 3.3 eV due to dissocia

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25

Botros, K. Z., and S. S. Sheinin. "A method for avoiding errors in measurements of dislocation density in specimens with a high dislocation density." Proceedings, annual meeting, Electron Microscopy Society of America 50, no. 2 (1992): 1458–59. http://dx.doi.org/10.1017/s0424820100131929.

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The measurement of dislocation density from electron microscope images of dislocations is an important tool in the hands of the materials scientist. Weak beam images are often chosen for this purpose. In cases where the dislocation density is high, there is a strong possibility that the imaging electrons propagating through the thin foil would encounter several dislocations before emerging from the bottom surface. A question which arises is what effect this may have on image contrast and whether this affects measurements of dislocation density.The authors of this paper have addressed this ques

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26

Lazar, Markus. "The gauge theory of dislocations: a uniformly moving screw dislocation." Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences 465, no. 2108 (2009): 2505–20. http://dx.doi.org/10.1098/rspa.2009.0043.

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In this paper, we present the equations of motion of a moving screw dislocation in the framework of the translation gauge theory of dislocations. In the gauge field theoretical formulation, a dislocation is a massive gauge field. We calculate the gauge field theoretical solutions of a uniformly moving screw dislocation. We give the subsonic and supersonic solutions. Thus, supersonic dislocations are not forbidden from the field theoretical point of view. We show that the elastic divergences at the dislocation core are removed. We also discuss the Mach cones produced by supersonic screw disloca

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27

Karakoç, Yenal, Ömer Kaçmaz, Öner Avınca, and Mahmut Tas. "Analysis of Temporomandibular Joint Dislocations in A Province of Türkiye." Cukurova Anestezi ve Cerrahi Bilimler Dergisi 8, no. 1 (2025): 7–11. https://doi.org/10.36516/jocass.1582110.

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ABSTRACT Background: It is extremely important to analyze the etiology of TMJ dislocation, take the correct history, and diagnose the signs and symptoms correctly so that the treatment can be performed as soon as possible without delay. Objectives: In this study, we aimed analysis of the patient's management and applicability to the emergency department due to temporomandibular joint displacement with the literature. Material and methods: In our single-center retrospective study, all patients who applied to the emergency department of our hospital between January 2016 and April 2022 due to man

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28

Lee, T. C., I. M. Robertson, and H. K. Birnbaum. "An in-situ TEM study on the slip activation across grain boundaries." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 4 (1990): 542–43. http://dx.doi.org/10.1017/s0424820100175843.

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The movement of lattice dislocations in a polycrystalline material is usually impeded by the existence of grain boundaries. Depending on the local chemistry and the structure of the boundary, this impediment (or the interaction of dislocations and grain boundaries) can create dislocation pile- ups and eventually lead to one of the several possible reactions: 1) dislocations can be transferred directly through the grain boundary, 2) dislocations can be absorbed and become grain boundary dislocations, 3) dislocations can be ejected back into their original grain, 4) dislocations can be accommoda

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29

Gulbrandsen, Matthew T., Jill G. Putnam, J. Tracy Watson, and Michael D. McKee. "Irreducible Volar DRUJ Dislocation with Distal Radius Fracture Dislocation." Journal of Wrist Surgery 09, no. 02 (2019): 156–59. http://dx.doi.org/10.1055/s-0039-1692476.

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Abstract Background Volar dislocations of the distal radioulnar joint (DRUJ) are rare and often missed during initial evaluation. Chronic dislocations and disability can occur when DRUJ dislocations are unrecognized and not reduced. DRUJ dislocations often occur with other wrist injuries, which may complicate reduction. Closed reduction can fail to reduce DRUJ dislocations, in which case open reduction is necessary. Case Description This case describes a patient who had a volar dislocation of the DRUJ with an associated dorsal distal radius fracture dislocation. Initial attempts at closed redu

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30

Thomson, Robb, L. E. Levine, and G. G. Long. "Small-angle scattering by dislocations." Acta Crystallographica Section A Foundations of Crystallography 55, no. 3 (1999): 433–47. http://dx.doi.org/10.1107/s010876739801071x.

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It is shown that the small-angle scattering of X-rays or neutrons by dislocations within a deformed metal, which are partially ordered into wall-like structures, is characterized by several factors. Principally these are associated with: (i) a single dislocation or dipole; (ii) the dislocation configuration in the plane of the wall; and (iii) the distribution of dislocations across the wall thickness. With the assumption of isotropic elasticity, small-angle scattering will be sensitive only to the edge components of the dislocations. The scattered intensity is dominated by scattering from disl

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31

Gurrutxaga-Lerma, Beñat, Daniel S. Balint, Daniele Dini, and Adrian P. Sutton. "Elastodynamic image forces on dislocations." Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences 471, no. 2181 (2015): 20150433. http://dx.doi.org/10.1098/rspa.2015.0433.

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The elastodynamic image forces on edge and screw dislocations in the presence of a planar-free surface are derived. The explicit form of the elastodynamic fields of an injected, quiescent screw dislocation are also derived. The resulting image forces are affected by retardation effects: the dislocations experience no image force for a period of time defined by the arrival and reflection at the free surface of the dislocation fields. For the case of injected, stationary dislocations, it is shown that the elastodynamic image force tends asymptotically to the elastotatic prediction. For the case

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32

Yeo, Im Gyu, Tai Hee Eun, Jang Yul Kim, Seung Suk Lee, Han Seok Seo, and Myong Chuel Chun. "Study on Dislocation Behaviors during PVT Growth of 4H-SiC." Materials Science Forum 963 (July 2019): 64–67. http://dx.doi.org/10.4028/www.scientific.net/msf.963.64.

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The generation and transformation of dislocations in 4H-SiC crystals grown by PVT were investigated. Experiments were carried out in two stages for more comprehensive observation on dislocation behaviors. For the first stage known as initial growth, we investigated mainly the seed and grown interface. The behavior and transition of the dislocations in grown crystal were observed along the length of the crystal at second stage. The formation of threading edge dislocations (TEDs) strongly depends on the surface morphologies related with internal temperature gradients during crystal growth. The b

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33

Harris, Andrew P., Avi D. Goodman, Joseph A. Gil, Neill Li, Jeremy Raducha, and Arnold-Peter C. Weiss. "The Trapezium Dislocation: Case Presentation, Review of the Literature, Radiographic Analysis, Proposed Classification, and Treatment." HAND 14, no. 3 (2017): 299–304. http://dx.doi.org/10.1177/1558944717744339.

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Background: Trapezium dislocations are rare injuries. Methods: A PubMed search of the term “trapezium dislocation” was conducted. Publications reporting a complete trapezium dislocation were included in the review. Results: The PubMed search resulted in 168 results. Fourteen publications reporting on 16 complete trapezium dislocations met inclusion criteria. A case of delayed diagnosis of a trapezium dislocation is presented. The literature is reviewed for pertinent clinically relevant information with respect to trapezium dislocations. A systematic method for radiographic analysis of trapeziu

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34

Lawson, Kevin A., Alfonso E. Ayala, Matthew L. Morin, L. Daniel Latt, and Jason R. Wild. "Ankle Fracture-Dislocations." Foot & Ankle Orthopaedics 3, no. 3 (2018): 247301141876512. http://dx.doi.org/10.1177/2473011418765122.

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Ankle fractures are common musculoskeletal injuries that may result in tibiotalar joint dislocations. Ankle fracture-dislocations occur via similar mechanisms as ankle fractures, although the persistence or magnitude of the deforming force is sufficient to disrupt any remaining bony or soft-tissue stability. Ankle fracture-dislocations likely represent distinct clinical entities, as the pathology, management, and patient outcomes following these injuries differ from those seen in more common ankle fractures without dislocation. Ankle fracture-dislocations have higher rates of concomitant injur

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35

Sarafanov, G. F. "INSTABILITY IN A DISLOCATION ENSEMBLE AT PLASTIC DEFORMATION IN METALS." Problems of strenght and plasticity 83, no. 2 (2021): 198–206. http://dx.doi.org/10.32326/1814-9146-2021-83-2-198-206.

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A problem related to the development of instability of a homogeneous state in an ensemble of screw dislocations under plastic deformation of metals is considered . The study of the development of instability and structure formation in the dislocation ensemble is carried out on the basis of the method developed for charged particles in plasma and associated with the correlation interaction of electrons and positively charged ions. Accordingly, the screw dislocation ensemble is represented as a system of dislocations with an opposite Burgers vector, i.e., as a plasma-like medium with opposite di

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Allen, Robert, Laszlo Toth, Andrew Oppedal, and Haitham El Kadiri. "Crystal Plasticity Modeling of Anisotropic Hardening and Texture Due to Dislocation Transmutation in Twinning." Materials 11, no. 10 (2018): 1855. http://dx.doi.org/10.3390/ma11101855.

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In crystalline materials, dislocations are three-dimensional lattice distortions that systematically distort twin interfaces that they encounter. This results in dislocation dissociation events and changes in the atomic structure of the interface. The manner in which the interface distorts drive the product of the dissociation event, and consequently, the incident dislocation core and the magnitude and relative direction of the Burgers vector govern these slip-twin interaction phenomena. Recent characterization studies using transmission electron microscopy as well as advanced molecular dynami

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Shikata, Shinichi, and Naoya Akashi. "Dislocation Vector Analysis Method of Deep Dislocation Having C-Axis Segment in Diamond." Materials Science Forum 1004 (July 2020): 519–24. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.519.

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X-ray topography is an effective tool to investigate dislocations in semiconductor crystals. Due to low X-ray absorption coefficients of diamond, X-rays can penetrate deep into the crystal. Thus, deep three-dimensional (3D) dislocations are projected on two-dimension (2D) film, which makes dislocation analysis particularly challenging. Dislocation vectors from the films obtained using a set of the same diffraction vectors were identified using topographical and geometrical analyses. The depth and position of the dislocations in a crystal that was projected on a film were determined using geome

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Wu, Fang Zhen, Huan Huan Wang, Sha Yan Byrapa, et al. "Synchrotron X-Ray Topography Studies of the Propagation and Post-Growth Mutual Interaction of Threading Growth Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC." Materials Science Forum 717-720 (May 2012): 343–46. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.343.

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Synchrotron White Beam X-ray Topography (SWBXT) imaging of wafers cut parallel to the growth axis from 4H-SiC boules grown using Physical Vapor Transport has enabled visualization of the evolution of the defect microstructure. Here we present observations of the propagation and post-growth mutual interaction of threading growth dislocations with c-component of Burgers vector. Detailed contrast extinction studies reveal the presence of two types of such dislocations: pure c-axis screw dislocations and those with Burgers Vector n1c+n2a, where n1is equal to 1 and n2is equal to 1 or 2. In addition

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Jyothiprasanth, M., C. R. Jithin, and Akhil K. Thomas. "Unilateral Habitual Anterior Sternoclavicular Joint Dislocation in an Adolescent Female: A Rare Case Report and Literature Review." Journal of Orthopaedic Association of South Indian States 21, no. 1 (2024): 15–17. https://doi.org/10.4103/joasis.joasis_3_24.

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Abstract Sternoclavicular joint (SCJ) dislocations are infrequent, constituting merely 3% of all shoulder dislocations, and anterior dislocations outnumber posterior dislocations. Chronic instability is a usual feature observed in both spontaneous and traumatic anterior dislocations, although the manifestation of incapacitating symptoms remains relatively uncommon. This case report presents a unique instance of habitual unilateral sternoclavicular joint dislocation in an adolescent female. A 26-year-old female nurse who noticed abnormal movement of her right collarbone's medial end during shou

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Shen, Yixi, and Douglas E. Spearot. "Mobility of dislocations in FeNiCrCoCu high entropy alloys." Modelling and Simulation in Materials Science and Engineering 29, no. 8 (2021): 085017. http://dx.doi.org/10.1088/1361-651x/ac336a.

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Abstract Dislocations in high entropy alloys (HEAs) are wavy and have natural pinning points due to the variable chemical and energetic landscape surrounding the dislocation core. This can influence the critical shear stress necessary to initiate dislocation motion and the details associated with sustained dislocation glide. The objective of this work is to determine the relationship between Schmid shear stress and dislocation velocity in single phase FCC FeNiCrCoCu HEAs using molecular dynamics simulations, with comparisons made to dislocation motion in homogeneous Ni and Cu. Simulations are

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Huang, Hanchen, Nasr Ghoniem, Tomas Diaz de la Rubia, Moono Rhee, Hussein Zbib, and John Hirth. "Stability of Dislocation Short-Range Reactions in BCC Crystals." Journal of Engineering Materials and Technology 121, no. 2 (1999): 143–50. http://dx.doi.org/10.1115/1.2812359.

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The stability of short-range reactions between two dislocations of parallel line vectors which glide on two parallel slip planes in BCC crystals is determined. The two dislocations are assumed to be infinitely long, and their interaction is treated as elastic. The interaction and self-energies are both computed for dynamically moving dislocations, where the dependence on dislocation velocity is taken into account. The stability of the reaction is determined as a function of the following phase space variables: relative angle, relative speed, dislocation mobility, Burgers vector, separation of

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Sato, Michihiro, Tetsuya Ohashi, Takuya Maruizumi, and Isao Kitagawa. "Crystal Plasticity Analysis of Thermal Deformation and Dislocation Accumulation in ULSI Cells." Key Engineering Materials 324-325 (November 2006): 1035–38. http://dx.doi.org/10.4028/www.scientific.net/kem.324-325.1035.

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Thermal stress, plastic slip deformation and accumulation of dislocations in shallow trench isolation (STI) type ULSI devices when the temperature drops from 1000 し to room temperature are analyzed by a crystal plasticity analysis cord. The results show that dislocation accumulation takes place at the temperature range over 800 し, and the difference of 6 MPa in the lattice friction stress at 1000 し!causes increase of dislocation density more than 1.6 times. Dislocations generate and accumulate at the shoulder part of the device area and bottom corners of the trench. Dislocations are categorize

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Kovacevic, Maksim, Marijana Kovacevic, Sanja Maric, Nenad Lalovic, Milivoje Dostic, and Vjeran Saratlic. "Our results in the treatment of tarsal dislocations." Srpski arhiv za celokupno lekarstvo 148, no. 9-10 (2020): 554–59. http://dx.doi.org/10.2298/sarh191105034k.

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Introduction/Objective. Tarsal dislocations are rare injuries. Usually, they are caused by high-energy trauma. Depending on the type of dislocation, surgical treatment or closed reduction is used. In this study, 13 patients are presented with the aim to analyze the type of feet dislocations, their treatment, and outcome. Methods. Tarsal dislocation cases treated in the University Hospital in Foca were analyzed during the period 2009?2016. All the cases were clinically and radiographically examined and monitored on control examinations at least three years. The mobility of joints was measured a

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Petelina, Yulia, Svetlana Kolupaeva, Konstantin A. Polosukhin, and Aleksander Petelin. "Influence of the Dislocation Density on the Expansion Dynamics of the Crystallographic Slip Zone along Screw Orientations in Aluminum and Copper." Key Engineering Materials 683 (February 2016): 136–41. http://dx.doi.org/10.4028/www.scientific.net/kem.683.136.

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Crystallographic slip is one of key mechanisms determining plastic form change of crystalline solids. Despite a large amount of works done on the subject, crystallographic slip is a very difficult subject to study. Significant progress in the study of the crystallographic slip process is possible only with the use of a set of different methods: experimental methods, methods of mathematical modeling and simulation. The paper presents a modification mathematical expansion model of closed dislocations emitted by one dislocation source with takes into account the elastic interaction force among al

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Li, Quantong, Albert Minj, Yunzhi Ling, et al. "Transition from Screw-Type to Edge-Type Misfit Dislocations at InGaN/GaN Heterointerfaces." Crystals 13, no. 7 (2023): 1027. http://dx.doi.org/10.3390/cryst13071027.

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We have investigated the interface dislocations in InxGa1−xN/GaN heterostructures (0 ≤ x ≤ 0.20) using diffraction contrast analysis in a transmission electron microscope. The results indicate that the structural properties of interface dislocations depend on the indium composition. For lower indium composition (up to x = 0.09), we observed that the screw-type dislocations and dislocation half-loops occurred at the interface, even though the former do not contribute toward elastic relaxation of the misfit strain in the InGaN layer. With the increase in indium composition (0.13 ≤ x ≤ 0.17), in

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Fukumoto, Ken-ichi, Kohei Umehara, and Kiyohiro Yabuuchi. "Dynamic Interaction between Dislocation and Irradiation-Induced Defects in Stainless Steels during Tensile Deformation." Metals 12, no. 5 (2022): 762. http://dx.doi.org/10.3390/met12050762.

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A series of in-situ transmission electron microscopy (TEM) observations during tensile deformation were conducted on the ion-irradiated stainless steel. The jerky motion of dislocations appeared, and dislocations were pinned and depinned at the defects through the in-situ TEM observation. The jump distance traveled by dislocation was measured and discussed as the mean interval of defects interacting with the dislocation motion. Microstructural information of irradiation defects such as obstacle interval was obtained by TEM and atom probe tomography (APT), and the type of pinning site was ident

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Hernigou, P. "WHAT IS THE LIFETIME RISK OF REOPERATION AND REVISION FOR PATIENTS UNDERGOING DUAL MOBILITY TOTAL HIP ARTHROPLASTY?" Orthopaedic Proceedings 105-B, SUPP_12 (2023): 41. http://dx.doi.org/10.1302/1358-992x.2023.12.041.

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The purpose was to determine the lifetime risk of re-operation due to specific complications related to dual mobility using re-operation as a competing risk, excluding loosening, periprosthetic fracture, and infection.1503 mono-block dual mobility total hip arthroplasty (DM-THAs). Defining the re-operation when anesthesia (for dislocation) and revision when the implant changed. Surgery (801 for primary, 702 for revision with 201 for recurrent dislocation and 501 for loosening) performed between 1990 and 2020 in average 81-year-old (range 50–102) patients, with 522 living patients at 10 years f

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Yuan, Shao Qiang, and Xiao Juan Zhang. "Evolution in Dislocation Configuration of Deformed Fe-40Ni-Ti Alloy during Isothermal Relaxation." Key Engineering Materials 609-610 (April 2014): 515–20. http://dx.doi.org/10.4028/www.scientific.net/kem.609-610.515.

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The thermo-simulation test and transmission electron microscopy (TEM) were applied to investigate the evolution of dislocation configuration and strain induced precipitation behavior during relaxation at 850°C in a deformed Fe-40Ni-Ti alloy. The stress relaxation curve can be divided into three stages, namely, the process of incubation, nucleation and growth, and the coarsening of strain-induced precipitates. The highly dense and twisted dislocations formed during the deformation develop into dislocation cells and finally, the sub-grains can be observed when relaxing to 1000s. The strain induc

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Li, Yon Gan, Xiang Qian Xiu, Xue Mei Hua, et al. "Study of Dislocation Densities of Thick GaN Films." Advanced Materials Research 989-994 (July 2014): 387–90. http://dx.doi.org/10.4028/www.scientific.net/amr.989-994.387.

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The dislocation density of GaN thick films has been measured by high-resolution X-ray diffraction. The results show that both the edge dislocations and the screw dislocation reduce with increasing the GaN thickness. And the edge dislocations have a larger fraction of the total dislocation densities, and the densities for the edge dislocation with increasing thickness reduce less in contrast with those for the screw dislocation.

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Fang, J., and E. M. Schulson. "Interaction of dislocations with grain boundaries in Ni3Ge." Proceedings, annual meeting, Electron Microscopy Society of America 50, no. 1 (1992): 172–73. http://dx.doi.org/10.1017/s0424820100121260.

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An important aspect of deformation in LI2 intermetallic compounds at low temperature is the interaction of gliding dislocations with grain boundaries. In-situ straining in Ni3Al revealed one mode of interaction: dislocations piling up at grain boundaries and emitting into the adjoining grain . The present paper shows another mode of dislocation-grain boundary interaction in Ni3Ge: dislocations piling up against grain boundaries and being ejected back into the original grain. In the present case, this phenomenon is broadly termed “dislocation reflection”. However, in both of these modes, the ou

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