Relevant bibliographies by topics / DMS [Diluted Magnetic Semiconductors]

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Academic literature on the topic 'DMS [Diluted Magnetic Semiconductors]'

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Published: 4 June 2021
Last updated: 8 February 2022

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Journal articles on the topic "DMS [Diluted Magnetic Semiconductors]"

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Samarth, N., and J. K. Furdyna. "Diluted Magnetic Semiconductors." MRS Bulletin 13, no. 6 (June 1988): 32–36. http://dx.doi.org/10.1557/s0883769400065477.

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Diluted magnetic semiconductors (DMS) are semiconducting alloys whose lattice is partly made of substitutional magnetic ions. The most extensively studied materials of this type are the alloys, in which a fraction of the group II sublattice is replaced at random by Mn. The entire family of ternary alloys, along with their crystal structure and corresponding ranges of composition, is listed in Table I. Over the past decade, these alloys have attracted a growing scientific interest because of new fundamental effects in semiconductor physics and magnetism in these materials and because of their potential applications in optical nonreciprocal devices, solid state lasers, flat panel displays, infrared detectors, and other optoelectronic applications.The increasing popularity of this field can be attributed to the broad variety of fascinating problems offered by the study of the alloys. To begin with, there is an interest in the semiconducting properties per se — for instance, the understanding of the electronic band structure and its variation with alloy composition. As in other ternary alloys, the band parameters and the lattice constant can be “tuned” by controlling the alloy composition, opening the door to band-gap engineering and lattice matching in the context of epitaxially grown superlattices and het-erostructures. The random distribution of Mn atoms with a well-characterized antiferromagnetic Mn-Mn exchange interaction provides an ideal system for studying fundamental questions in disordered magnetism. The sp-d exchange interaction between the spins of band electrons and the localized moments of the Mn atoms constitutes a unique interplay between semiconductor physics and magnetism. This leads to unusual magneto-transport and magneto-optic phenomena such as an extremely large Faraday rotation, giant negative magneto-resistance, and a magnetic-field-induced metal-insulator transition. Finally, the potential technological importance of DMS is also being recognized. For example, the large Faraday rotation holds promise of DMS applications as optical isolators, modulators, and circulators. We will briefly introduce some of the exciting research problems offered by the study of DMS. More detailed information is available in several extensive reviews and compendia.
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CHOI, HEON-JIN, HAN-KYU SEONG, and UNGKIL KIM. "DILUTED MAGNETIC SEMICONDUCTOR NANOWIRES." Nano 03, no. 01 (February 2008): 1–19. http://dx.doi.org/10.1142/s1793292008000848.

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An idea for simultaneously manipulating spin and charge in a single semiconductor medium has resulted in the development of diluted magnetic semiconductors (DMSs), which exhibits surprisingly room temperature ferromagnetic signatures despite having controversial ferromagnetic origin. However, achievement of truly room temperature ferromagnetism by carrier mediation is still the subject of intense research to develop the practical spin-based devices. Nanowires with one-dimensional nanostructure, which offers thermodynamically stable features and typically single crystalline and defect free, have a number of advantages over thin films with respect to studying ferromagnetism in DMSs. This review focuses primarily on our works on GaN -based DMS nanowires, i.e., Mn -doped GaN , Mn -doped AlGaN and Cu -doped GaN nanowires. These DMS nanowires have room temperature ferromagnetism by the local magnetic moment of doping elements that are in a divalent state and in tetrahedral coordination, thus substituting Ga in the wurtzite-type network structure of host materials. Importantly, our evidences indicate that the magnetism is originated from the ferromagnetic interaction driven by the carrier. These outcomes suggest that nanowires are ideal building blocks to address the magnetism in DMS due to their thermodynamic stability, single crystallinity, free of defects and free standing nature from substrate. Nanowires themselves are ideal building blocks for nanodevices and, thus, it would also be helpful in developing DMS-based spin devices.
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Stephanovich, V. A., and Yu G. Semenov. "The Magnetic Domain Structure Properties in Diluted Magnetic Semiconductors." Ukrainian Journal of Physics 65, no. 10 (October 9, 2020): 881. http://dx.doi.org/10.15407/ujpe65.10.881.

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We present a comprehensive analysis of the domain structure formation in the ferromagneticphase of diluted magnetic semiconductors (DMS) of the p-type. Our analysis is carried outon the base of the effective magnetic free energy of DMS calculated by us earlier. This freeenergy, substituting DMS (a disordered magnet) by an effective ordered substance, permits usto apply the standard phenomenological approach to the domain structure calculation. Usingthe coupled system of Maxwell equations with those obtained by the minimization of the freeenergy functional, we show the existence of the critical ratio vcr of concentration of chargecarriers and magnetic ions such that the sample critical thickness Lcr (such that the sampleis monodomain at L < Lcr) diverges as v → vcr. At v > vcr, the sample is monodomain. Thisfeature makes DMS different from conventional ordered magnets, as it gives a possibility tocontrol the sample critical thickness and the emerging domain structure period by a variationof v. As the concentration of magnetic impurities grows, vcr → ∞, restoring a conventionalbehavior of ordered magnets. Above facts have been revealed by the examination of the tem-perature of the transition to an inhomogeneous magnetic state (stripe domain structure) inthe slab of a p-type DMS with finite thickness L. Our theory can be easily generalized for anarbitrary disordered magnet.
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MIURA, N., Y. H. MATSUDA, and T. IKAIDA. "MEGAGAUSS CYCLOTRON RESONANCE IN SEMICONDUCTOR NANOSTRUCTURES AND DILUTED MAGNETIC SEMICONDUCTORS." International Journal of Modern Physics B 16, no. 20n22 (August 30, 2002): 3399–404. http://dx.doi.org/10.1142/s0217979202014565.

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We report the latest results of cyclotron resonance experiments on semiconductor nanostructures and diluted magnetic semiconductors (DMS) in very high magnetic fields up to 600 T produced by magnetic flux compression and the single turn coiled technique. Many new features were observed in the very high field range, such as characteristic behavior of low dimensional electrons, carrier dynamics or electron-electron interaction effects in quantum wells and quantum dot samples. In PbSe/PdEuTe quantum dots, which were regularly arranged to form an fcc superlattice, we observed an absorption peak with a splitting and a wavelength dependence of the absorption intensity. In DMS, such as CdMnTe and InMnAs, change of the carrier effective mass with Mn doping was studied in detail. We found anomalous mass increase with doping of magnetic ions. The amount of the observed mass increase cannot be explained by the k·p theory and suggests the importance of d-s or d-p hybridization.
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Ionescu, M., P. Photongkam, R. Siegele, A. Deslantes, S. Li, and D. D. Cohen. "Fabrication and Characterisation of Diluted Magnetic Semiconductors Thin Films Using Ion Beams." Materials Science Forum 706-709 (January 2012): 2869–73. http://dx.doi.org/10.4028/www.scientific.net/msf.706-709.2869.

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The intrinsic n-type (II-VI) semiconductor ZnO may become ferromagnetic at room temperature, by small additions of magnetic ions, resulting in what is called a Diluted Magnetic Semiconductors (DMS). The potential application of DMS in spintronic devices of is driving the research effort to dope magnetic elements into this semiconductors with a depth distribution as uniform as possible. The doping levels and the depth distribution of dopants are critical parameters for the magnetic properties of this material and the possible clustering of dopants can play a significant negative role in its macroscopic magnetic properties. Thin ZnO (0001) films of between 100nm and 500nm, grown on c-Al2O3 by MOCVD were implanted with Co, Eu and Co+Eu by ion irradiation at low energies. In order to improve the depth distribution of dopants, the ion implantation was carried out through a number of appropriately chosen range foils. The results show an increase in the level of dopant homogeneity throughout the entire thickness of the film, and a ferromagnetic behavior above room temperature for Zn0.96Co0.04O, Zn0.96Eu0.04O and Zn0.92Co0.04Eu0.04O.
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HOANG, ANH TUAN, and DUC ANH LE. "OPTICAL CONDUCTIVITY OF (III, Mn)V DILUTED MAGNETIC SEMICONDUCTORS." Modern Physics Letters B 21, no. 02n03 (January 30, 2007): 69–77. http://dx.doi.org/10.1142/s0217984907012591.

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The coherent potential approximation (CPA) is used on a minimal model of diluted magnetic semiconductors (DMS), where the carrier feels a nonmagnetic potential at a magnetic impurity site, and its spin interacts with the localized spins of the magnetic impurities through exchange interactions. The CPA equations for one particle Green function are derived and the optical conductivity dependence on the system parameters and temperature is investigated. For illustration, the case of Ga 1-x Mn x As is considered and compared with experimental data.
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Rivera, S. A. López. "New Results in Raman Scattering in Diluted Magnetic Semiconductors (DMS)." Japanese Journal of Applied Physics 32, S3 (January 1, 1993): 403. http://dx.doi.org/10.7567/jjaps.32s3.403.

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Gama, Lucianna, M. A. Ribeiro, Débora A. Vieira, A. M. C. Santos, Ruth Herta Goldsmith Aliaga Kiminami, I. T. Weber, and Ana Cristina Figueiredo de Melo Costa. "Synthesis Methods Evaluation for Preparation of the Zno:Co Diluted Magnetic Semiconductor (DMS)." Materials Science Forum 591-593 (August 2008): 387–91. http://dx.doi.org/10.4028/www.scientific.net/msf.591-593.387.

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Diluted magnetic semiconductors (DMS), which have both semiconducting and magnetic properties, are those in which transitions metal ions substitute cations of host semiconductor materials [1]. There is a great interest for DMS for use as the material of spintronics. In this study is reported the structural and morphologic characterization of Zn1.95Co0.05O nanoparticles obtained by Pechini method and combustion reaction. The powders resulting were characterized by X-ray diffraction (XRD) for determination of the phases, crystalline phase and lattice parameter; nitrogen adsorption by BET for determination of the specific superficial area and calculation the particle size from the superficial area and scanning electron microscopy (SEM) for morphologic analysis. The XRD results demonstrated the viability of obtaining crystalline and nanosize powders by the both synthesis routes. For all samples the average crystallite sizes was nanosized, but the powders obtained by reaction combustion is smaller. The SEM micrographs shows that the powders obtained for both syntheses are constituted of soft agglomerates.
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CROOKER, SCOTT A., and NITIN SAMARTH. "TUNING MAGNETIC DISORDER IN DILUTED MAGNETIC SEMICONDUCTORS USING HIGH FIELDS TO 89 TESLA." International Journal of Modern Physics B 23, no. 12n13 (May 20, 2009): 2575–84. http://dx.doi.org/10.1142/s0217979209062013.

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We describe recent and ongoing studies at the National High Magnetic Field Laboratory at Los Alamos using the new "100 Tesla Multi-Shot Magnet", which is presently delivering fields up to ~89 T during its commissioning. We discuss the first experiments performed in this magnet system, wherein the linewidth of low-temperature photoluminescence spectra was used to directly reveal the degree of magnetic alloy disorder 'seen' by excitons in single Zn 0.80 Cd 0.22 Mn 0.08 Se quantum wells. The magnetic potential landscape in II-VI diluted magnetic semiconductors (DMS) is typically smoothed when the embedded Mn 2+ spins align in an applied field. However, an important (but heretofore untested) prediction of current models of compositional disorder is that magnetic alloy fluctuations in many DMS compounds should increase again in very large magnetic fields approaching 100 T. We observed precisely this increase above ~70 T, in agreement with a simple model of magnetic alloy disorder.
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HOANG, ANH-TUAN. "CURIE TEMPERATURE OF THE TWO-BAND MODEL FOR DILUTED MAGNETIC SEMICONDUCTORS IN COHERENT POTENTIAL APPROXIMATION." Modern Physics Letters B 23, no. 26 (October 20, 2009): 3171–77. http://dx.doi.org/10.1142/s021798490902120x.

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Coherent potential approximation (CPA) is extended to a two-band model for diluted magnetic semiconductors (DMS). The magnetic transition temperature Tc as a function of magnetic coupling constants, hopping parameters and carrier densities is calculated by minimizing the free energy of the coupled carrier-localized spin system. It is shown that Tc can be substantially raised by considering multiband systems.
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Dissertations / Theses on the topic "DMS [Diluted Magnetic Semiconductors]"

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Dagnelund, Daniel. "Magneto-optical studies of dilute nitrides and II-VI diluted magnetic semiconductor quantum structures." Doctoral thesis, Linköpings universitet, Funktionella elektroniska material, 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-54695.

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This thesis work aims at a better understanding of magneto-optical properties of dilute nitrides and II-VI diluted magnetic semiconductor quantum structures. The thesis is divided into two parts. The first part gives an introduction of the research fields, together with a brief summary of the scientific results included in the thesis. The second part consists of seven scientific articles that present the main findings of the thesis work. Below is a short summary of the thesis. Dilute nitrides have been of great scientific interest since their development in the early 1990s, because of their unusual fundamental physical properties as well as their potential for device applications. Incorporation of a small amount of N in conventional Ga(In)As or Ga(In)P semiconductors leads to dramatic modifications in both electronic and optical properties of the materials. This makes the dilute nitrides ideally suited for novel optoelectronic devices such as light emitting devices for fiber-optic communications, highly efficient visible light emitting devices, multi-junction solar cells, etc. In addition, diluted nitrides open a window for combining Si-based electronics with III-V compounds-based optoelectronics on Si wafers, promising for novel optoelectronic integrated circuits. Full exploration and optimization of this new material system in device applications requires a detailed understanding of their physical properties. Papers I and II report detailed studies of effects of post-growth rapid thermal annealing (RTA) and growth conditions (i.e. presence of N ions, N2 flow, growth temperature and In alloying) on the formation of grown-in defects in Ga(In)NP. High N2 flow and bombardment of impinging N ions on grown sample surface is found to facilitate formation of defects, such as Ga interstitial (Gai) related defects, revealed by optically detected magnetic resonance (ODMR). These defects act as competing carrier recombination centers, which efficiently decrease photoluminescence (PL) intensity. Incorporation of a small amount of In (e.g. 5.1%) in GaNP seems to play a minor role in the formation of the defects. In GaInNP with 45% of In, on the other hand, the defects were found to be abundant. Effect of RTA on the defects is found to depend on initial configurations of Gai related defects formed during the growth. In Paper III, the first identification of an interfacial defect at a heterojunction between two semiconductors (i.e. GaP/GaNP) is presented. The interface nature of the defect is clearly manifested by the observation of ODMR lines originating from only two out of four equivalent <111> orientations. Based on its resolved hyperfine interaction between an unpaired electronic spin (S=1/2) and a nuclear spin (I=1/2), the defect is concluded to involve a P atom at its core with a defect/impurity partner along a <111> direction. Defect formation is shown to be facilitated by N ion bombardment. In Paper IV, the effects of post-growth hydrogenation on the efficiency of the nonradiative (NR) recombination centers in GaNP are studied. Based on the ODMR results, incorporation of H is found to increase the efficiency of the NR recombination via defects such as Ga interstitials. In Paper V, we report on our results from a systematic study of layered structures containing an InGaNAs/GaAs quantum well, by the optically detected cyclotron resonance (ODCR) technique. By monitoring PL emissions from various layers, the predominant ODCR peak is shown to be related to electrons in GaAs/AlAs superlattices. This demonstrates the role of the SL as an escape route for the carriers confined within the InGaNAs/GaAs single quantum well. The last two papers are within a relatively new field of spintronics which utilizes not only the charge (as in conventional electronics) but also the quantum mechanical property of spin of the electron. Spintronics offers a pathway towards integration of information storage, processing and communications into a single technology. Spintronics also promises advantages over conventional charge-based electronics since spin can be manipulated on a much shorter time scale and at lower cost of energy. Success of semiconductor-based spintronics relies on our ability to inject spin polarized electrons or holes into semiconductors, spin transport with minimum loss and reliable spin detection. In Papers VI and VII, we study the efficiency and mechanism for carrier/exciton and spin injection from a diluted magnetic semiconductor (DMS) ZnMnSe quantum well into nonmagnetic CdSe quantum dots (QD’s) by means of spin-polarized magneto PL combined with tunable laser spectroscopy. By means of a detailed rate equation analysis presented in Paper VI, the injected spin polarization is deduced to be about 32%, decreasing from 100% before the injection. The observed spin loss is shown to occur during the spin injection process. In Paper VII, we present evidence that energy transfer is the dominant mechanism for carrier/exciton injection from the DMS to the QD’s. This is based on the fact that carrier/exciton injection efficiency is independent of the width of the ZnSe tunneling barrier inserted between the DMS and QD’s. In sharp contrast, spin injection efficiency is found to be largely suppressed in the structures with wide barriers, pointing towards increasing spin loss.
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Zhou, Shengqiang. "Transition metal implanted ZnO: a correlation between structure and magnetism." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2008. http://nbn-resolving.de/urn:nbn:de:bsz:14-ds-1209998012687-36583.

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Nowadays ferromagnetism is often found in potential diluted magnetic semiconductor systems. However, many authors question the origin of this ferromagnetism, i.e. if the observed ferromagnetism stems from ferromagnetic precipitates rather than from carriermediated magnetic coupling of ionic impurities, as required for a diluted magnetic semiconductor. In this thesis, this question will be answered for transition-metal implanted ZnO single crystals. Magnetic secondary phases, namely metallic Fe, Co and Ni nanocrystals, are formed inside ZnO. They are - although difficult to detect by common approaches of structural analysis - responsible for the observed ferromagnetism. Particularly Co and Ni nanocrystals are crystallographically oriented with respect to the ZnO matrix. Their structure phase transformation and corresponding evolution of magnetic properties upon annealing have been established. Finally, an approach, pre-annealing ZnO crystals at high temperature before implantation, has been demonstrated to sufficiently suppress the formation of metallic secondary phases.
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Staneva, Maya. "Theoretical study of dilute magnetic semiconductors : Properties of (Ga,Mn)As." Thesis, Uppsala universitet, Institutionen för fysik och astronomi, 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-126096.

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The dilute magnetic semiconductor (Ga,Mn)As , which is the most interesting and promising material for spintronics applications, has been theoretically studied by using Density Functional Theory. First of all, calculations on GaAs were done and it was found that GaAs is a semiconductor with a direct band gap. The calculated value of the band gap is ~ 0.5eV. Secondly, the material iron was considered and it was confirmed that iron is a ferromagnetic metal with 2.2µB net magnetic moment. Then a magnetic impurity of manganese, Mn was introduced in the nonmagnetic GaAs and it became ferromagnetic with a net magnetic moment of 4µB. The origin of the ferromagnetic behaviour is discussed and also the Curie temperature TC of the material. It appeared that (Ga,Mn)As is a suitable material for DMS but TC has to be increased before (Ga,Mn)As could be used for spintronics applications and on that account some methods of increasing TC are considered at the end.
Den magnetiska halvledaren (Ga,Mn)As som är det mest intressanta och lovande materialet för spinelektroniska tillämpningar har teoretiskt undersökts med hjälp av Täthetsfunktionalteorin. Först gjordes beräkningar på GaAs och det visade sig att GaAs är en halvledare med direkt bandgap. Det beräknade värdet på bandgapet är ca 0.5eV. Sedan var det järn som undersöktes och det blev bekräftat att järn är en ferromagnetisk metall med netto magnetisk moment lika med 2.2μB. Då magnetiska störningar i form av mangan atomer, Mn, infördes i det omagnetiska GaAs blev halvledaren ferromagnetisk med netto magnetisk moment lika med 4μB. Orsakerna till den ferromagnetiska ordningen diskuteras och även Curie temperaturen TC för materialet. Det visade sig att (Ga,Mn)As är ett lämpligt material för tillverkning av magnetiska halvledare men TC måste ökas innan (Ga,Mn)As skulle kunna användas i spinntroniska tillämpningar och av det skälet anges i slutet vissa metoder för att öka TC.
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Jeong, Byoung-Seong. "Growth and ferromagnetic semiconducting properties of titanium dioxide thin films an oxide-diluted magnetic semiconductor (o-dms) for spintronics /." [Gainesville, Fla.] : University of Florida, 2004. http://purl.fcla.edu/fcla/etd/UFE0004240.

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Haider, Muhammad Baseer. "Surface and Bulk Properties of Magnetically Doped GaN and Their Dependence on the Growth Conditions." Ohio University / OhioLINK, 2005. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1132011994.

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Khazen, Khashayar. "Ferromagnetic resonance investigation of GaMnAs nanometric layers." Paris 6, 2008. https://tel.archives-ouvertes.fr/tel-00329331v2.

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Cette thèse est dédiée à l’étude des propriétés magnétiques des couches nanométriques de GaMnAs par Résonance ferromagnétique (RFM). Trois séries des échantillons sont étudiées afin d' élucider l’influence des contraintes, la concentration des trous et la concentration de manganèse, sur les propriétés magnétiques de GaMnAs. Dans la première série, les échantillons de Ga1-xMnxAs avec x=0. 07 déposés sur les substrats de GaAs (en compression) et GaInAs (en extension) sont étudiés. Les résultats des mesures de l’aimantation, la résistivité et l’effet de Hall sont présentés. Les axes faciles de l’aimantation et le type d’anisotropie sont déterminés par mesures RFM. Les variations angulaires des spectres RFM sont étudiées en détails et le facteur g, la température de Curie et les constantes d’anisotropie sont déterminées en fonction de la température. La résonance des ondes de spin sont également observées et interprétées. Les observations sont comparées aux modèles phénoménologiques proposés et le spin stiffness et l’intégrale d’échange entre les ions de manganèse sont déduits. La deuxième étude concerne une série des échantillons de GaMnAs avec même niveau de dopage de Mn de 7% concentration atomique dont les concentrations de trous étaient variées via la passivation par l’hydrogène. Les concentrations des trous sont déduites des mesures d’effet Hall sous la condition de forts champs appliqués et à très basses températures. Les concentrations de trous mesurés correspondent aux différents régimes de conductivités ; de régime isolant aux régimes bande d’impureté et métallique. Les échantillons sont caractérisés par magnétométrie SQUID et les mesures de résistivité. L’aimantation en fonction de la concentration de trous est comparée aux prédictions du modèle RKKY. Les mesures de ERDA sont appliquées à la fin de déterminer la concentration de hydrogène dans l’échantillon ferromagnétique avec la concentration de trous la plus faible dans la série. La structure des domaines de cet échantillon est étudiée par microscopie magnéto-optique d’effet Kerr. Les spectres RFM sont analysés en détail et la concentration de trous correspondant à la formation de l’ordre ferromagnétique est estimée à 1019cm-3. Les facteurs g dépendent de la concentration de trous et la température. La relation entre les facteurs g et les polarisations de trous des échantillons calculées théoriquement est présentée. L’étude d’anisotropie des échantillons est fournie la détermination des constantes d’anisotropie magnétocrystallines en fonction de la concentration de trous et la température. Leurs variations sont comparées aux modèles théoriques. Les surfaces d’énergie sont déduites des constantes d’anisotropie magnétocrystallines mesurées, sont calculées en fonction de l’aimantation et les orientations et les grandeurs du champ appliqué. L’influence d’augmentation du niveau de dopage, de 7% à 21% concentration atomique est étudiée dans la troisième série des échantillons. Contrairement des prédictions théoriques, la température de Curie n’est pas augmentée en dessous de 180K. Les paramètres de RFM sont comparés à ceux des échantillon standard de GaMnAs avec 7% concentration atomique de Mn. La raison est attribuée au haut niveau de la compensation magnétique. Les mesures sont également comparées aux prédictions théoriques basées sur les approximations de champ moyen. La relaxation de l’aimantation est étudiée en fonction des contraintes, la concentration de trous et Mn aussi bien que la température. Les constantes de damping, sont trouvées d’être anisotropes. Cette anisotropie, dépend fortement aux procès dont contribution est la dominante pour une configuration particulaire du système
This thesis is dedicated to the study of the magnetic properties of GaMnAs nanometric layers by the ferromagnetic resonance (FMR) technique. Three series of samples have been studied to investigate independently the influence of the strain, the hole concentration and the Mn concentration on the magnetic properties of GaMnAs. In the first series, the Ga1-xMnxAs samples with x=0. 07, grown on GaAs (compressive strain) and GaInAs (tensile strain) substrates are studied. The results of magnetization, resistivity and Hall effect measurements are presented. From the FMR measurements the easy axes of magnetization and the type of magnetic anisotropy are determined. The angular variations of the FMR spectra are studied in detail and the g-factor, Curie temperature and the magnetocrystalline anisotropy constants are determined as function of temperature. Spin wave resonance were equally observed and interpreted. The observations are compared to the proposed phenomenological models and the spin stiffness and the exchange integral between the Mn ions are deducedThe second study concerns a series of GaMnAs samples with the same Mn doping level of 7% atomic concentration in which the hole concentrations was varied via a hydrogen passivation technique. The hole concentrations are deduced from Hall effect measurements in high fields and low temperatures. The measured hole concentrations correspond to different conductivity regimes from insulating to impurity band and metallic regimes. The samples are characterized by SQUID magnetometry and resistivity measurements. The magnetization as a function of hole concentration is compared to the predictions of the RKKY model. ERDA measurements are performed to determine the concentration of hydrogen in the ferromagnetic sample with the lowest hole concentration. The domain structure of this samples is investigated by magneto-optical Kerr effect microscopy. The FMR spectra are analyzed in details and the hole concentration corresponding to the onset of ferromagnetism is estimated to 1019cm-3. The g-factors depend on the hole concentration and temperature. The relation between the g-factors and the theoretically calculated hole polarization of the samples is presented. The anisotropy studies of the samples have provided the investigation of the magnetocrystalline anisotropy constants as a function of the hole concentration and the temperature. Their variations are compared to the theoretical models. The energy surfaces deduced from the measured magnetocrytalline anisotropy constants are calculated as a function of magnetization and applied field orientations and magnitudes. The influence of increasing the doping level from 7% to 21% atomic concentration is studied in the third series of samples. Contrary to the theoretical predictions, the critical temperature is not increased above 180K. The FMR parameters are compared to those of standard GaMnAs sample doped with 7%atomic concentration of Mn. The reason for no further increase in TC is attributed to high level of magnetic compensation. The measurements are also compared to the theoretical predictions based on the mean field approximations. The relaxation of the magnetization is studied as a function of strain, hole concentration, Mn concentration as well as temperature. The damping constants were found to be anisotropic. This anisotropy however depends strongly on the process whose contribution is dominant for a specific configuration of the system
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Le, thi Giang. "Synthèse par épitaxie et propriétés magnétiques des semiconducteurs ferromagnétiques dilués à base de GeMn." Thesis, Aix-Marseille, 2012. http://www.theses.fr/2012AIXM4026.

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Le développement des dispositifs issus de l'électronique de spin nécessite de nouveaux matériaux qui permettent d'injecter de manière efficace le courant polarisé en spin dans des semiconducteurs. Parmi de nombreux matériaux utilisés comme injecteurs de spin, les semiconducteurs ferromagnétiques dilués (DMS), obtenus en dopant des semiconducteurs avec des impuretés magnétiques tels que Mn ou Co, sont considérés comme des candidats potentiels pour l'injection de spin. Ces matériaux dopés deviennent ferromagnétiques tout en conservant leurs propriétés semiconductrices. Par conséquent, ils présentent une similarité d'impédance électrique par rapport aux substrats semiconducteurs, ce qui rend efficace l'injection de courant polarisé en spin dans ces derniers. Dans ce contexte, l'objectif principal de cette thèse consiste à étudier la cinétique de croissance des semiconducteurs ferromagnétiques dilués GeMn. Nous cherchons à déterminer les paramètres clés de la croissance des couches de GeMn, à savoir la température du substrat, et la concentration en Mn. Pour la fabrication de dispositifs électroniques fonctionnels, le challenge crucial est d'obtenir des DMS ayant une température de Curie (TC) bien supérieure à la température ambiante. Nous nous sommes donc concentrés sur la cinétique de formation de la phase nanocolonnaire GeMn possédant une TC au-delà de 400 K
The development of active spintronic devices requires new materials, which enable to efficiently inject spin-polarized currents into non-magnetic semiconductors. Among numerous materials that can be used as spin injectors, diluted magnetic semiconductors (DMS), obtained by doping standard semiconductors with magnetic impurities, such as Mn or Co, have emerged as potential candidates for spin injection. The materials become ferromagnetic while conserving their semiconducting properties. They exhibit therefore natural impedance match to host semiconductors and are expected to efficiently inject spin-polarized currents into semiconductors. In this context, the main objectives of this thesis work consist in studying the growth kinetics of GeMn-based diluted magnetic semiconductors. We aim at determining the main growth parameters, such as the substrate temperature and the Mn concentration, that govern the growth process of GeMn layers. Since for device applications it is crucial to obtain DMS exhibiting a Curie temperature (TC) well above room temperature, we have focused our attention to the kinetic formation of the GeMn nanocolumn phase, which exhibits a Curie temperature higher than 400 K
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8

Tran, Lien. "InSb semiconductors and (In,Mn)Sb diluted magnetic semiconductors." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2011. http://dx.doi.org/10.18452/16334.

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Im Rahmen dieser Arbeit wurden InSb- und verdünnt-magnetische In_{1-x}Mn_xSb Filme mittels Gasquellen-Molekularstrahlepitaxie hergestellt und deren strukturelle und elektronische Eigenschaften untersucht. Die 2 μm InSb-Dünnschichten wurden sowohl auf GaAs(001)-Substrat als auch um 4° in Richtung [110] fehlgeschnittenem Si(001)-Substrat hergestellt. Optimierte InSb-Schichten direkt auf GaAs zeigen eine hohe kristalline Qualität, niedriges Rauschen und eine Elektronenbeweglichkeit von 41100 cm^2/Vs bei 300 K. Die Ladungsträgerkonzentration beträgt etwa 2,9e16 cm^{-3}. Um InSb-Dünnschichten guter Qualität auf Si-Substrat zu realisieren, wurden fehlgeschnittene Substrate benutzt. Zur Reduzierung der Gitterfehlanpassung wurden Pufferschichten gewachsen. Eine Elektronenmobilität von 24000 cm^2/Vs und Ladungsträgerkonzentration von 2,6e16 cm^{-3} wurden bei 300 K nachgewiesen. Diese Probe enthält ein 0,06 μm GaAs/AlSb-Supergitter als Pufferschicht (Wachstumstemperatur war 340°C). Diese Probe zeigt der höheren Dichte der Microtwins und Stapelfehler als auch den Threading-Versetzungen in der schnittstellennahen Region geschuldet. Die Deep-Level Rauschspektren zeigen die Existenz von Deep-Levels sowohl in GaAs- als auch in Si-basierten Proben. Die InSb-Filme auf Si-Substrat zeigen einen kleineren Hooge-Faktor im Vergleich zu Schichten auf GaAs (300 K). Unter Anwendung der optimierten Wachstumsbedingungen für InSb/GaAs wurden verdünnt-magnetische In_{1-x}Mn_xSb-Schichten (bis zum 1% Mangan) auf GaAs (001)-realisiert. Mn verringert die Gitterkonstante und damit den Grad der Relaxation von (In,Mn)Sb-Filmen. In den Proben befindet sich Mn in zwei magnetischen Formen, sowohl als verdünnt-magnetischer Halbleiter (In,Mn)Sb, als auch als MnSb-Cluster. Die Cluster dominieren auf der Oberfläche. Die Curie-Temperatur, Tc, unterscheidet sich für die beiden Formen. Für (In,Mn)Sb ist Tc kleiner als 50 K. Die MnSb-Cluster zeigen dagegen ein Tc über 300 K.
This dissertation describes the growth by molecular beam epitaxy and the characterization of the semiconductor InSb and the diluted magnetic semiconductor (DMS) In_{1-x}Mn_xSb. The 2 µm-thick InSb films were grown on GaAs (001) substrate and Si (001) offcut by 4° toward (110) substrate. After optimizing the growth conditions, the best InSb films grown directly on GaAs results in a high crystal quality, low noise, and an electron mobility of 41100 cm^2/V s Vs with associated electron concentration of 2.9e16 cm^{-3} at 300 K. In order to successfully grow InSb on Si, tilted substrates and the insertion of buffer layers were used. An electron mobility of 24000 cm^2/V s measured at 300 K, with an associated carrier concentration of 2.6e16 cm^{-3} is found for the best sample that was grown at 340°C with a 0.06 μm-thick GaSb/AlSb superlattice buffer layer. The sample reveals a density of microtwins and stacking faults as well as threading dislocations in the near-interface. Deep level noise spectra indicate the existence of deep levels in both GaAs and Si-based samples. The Si-based samples exhibit the lowest Hooge factor at 300 K, lower than the GaAs-based samples. Taking the optimized growth conditions of InSb/GaAs, the DMS In_{1-x}Mn_xSb/GaAs is prepared by adding Mn (x < 1%) into the InSb during growth. Mn decreases the lattice constant as well as the degree of relaxation of (In,Mn)Sb films. Mn also distributes itself to result in two different and distinct magnetic materials: the DMS (In,Mn)Sb and clusters MnSb. The MnSb clusters dominate only on the surface. For the DMS alloy (In,Mn)Sb, the measured values of Curie temperature Tc appears to be smaller than 50 K, whereas it is greater than 300 K for the MnSb clusters.
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Wang, Weigang. "Spin-dependent transport in magnetic tunnel junctions and diluted magnetic semiconductors." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 184 p, 2009. http://proquest.umi.com/pqdweb?did=1654494821&sid=3&Fmt=2&clientId=8331&RQT=309&VName=PQD.

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Tanaka, Hiroki. "Zeeman Splitting Caused by Localized sp-d Exchange Interaction in Ferromagnetic GaMnAs Observed by Magneto-Optical Characterization." Ohio University / OhioLINK, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1441982108.

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Books on the topic "DMS [Diluted Magnetic Semiconductors]"

1

Diluted magnetic semiconductors. Singapore: World Scientific, 1991.

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Averous, Michel. Semimagnetic Semiconductors and Diluted Magnetic Semiconductors. Boston, MA: Springer US, 1991.

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Averous, Michel, and Minko Balkanski, eds. Semimagnetic Semiconductors and Diluted Magnetic Semiconductors. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3776-2.

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International School of Materials Science and Technology (1990 Erice, Italy). Semimagnetic semiconductors and diluted magnetic semiconductors. New York: Plenum Press, 1991.

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Jacek, Kossut, and SpringerLink (Online service), eds. Introduction to the Physics of Diluted Magnetic Semiconductors. Berlin, Heidelberg: Springer-Verlag Berlin Heidelberg, 2010.

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Gaj, Jan A., and Jacek Kossut, eds. Introduction to the Physics of Diluted Magnetic Semiconductors. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-15856-8.

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Krevet, Rasmus. FIR-laser magnetooptics on Cr-based diluted magnetic semiconductors. Göttingen: Cuvillier Verlag, 1994.

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Strutz, Thomas. High magnetic field electron spin-lattice relaxation in a diluted magnetic semiconductor: CdMnTe. Konstanz: Hartung-Gorre Verlag, 1991.

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Hausenblas, Monika. Investigation of low energy excitations in novel semiconducting systems by means of far infrared magnetospectroscopy. Konstanz: Hartung-Gorre Verlag, 1992.

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European Workshop on II-VI Compounds (3rd 1994 Linz, Austria). II-IV compounds and semimagnetic semiconductors: Joint proceedings of the Third European Workshop on II-IV Compounds, Linz, Austria, 26-28 September 1994 and the Fourth International Workshop on Semimagnetic (Diluted Magnetic) Semiconductors, Linz, Austria, 26-28 September 1994. Edited by Heinrich H, Mullin J. B, and International Workshop on Semimagnetic (Diluted Magnetic) Semiconductors (4th : 1994 : Linz, Austria). Aedermannsdorf, Switzerland: Trans Tech Publications, 1995.

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Book chapters on the topic "DMS [Diluted Magnetic Semiconductors]"

1

Gaj, Jan A., and Jacek Kossut. "Basic Consequences of sp–d and d–d Interactions in DMS." In Introduction to the Physics of Diluted Magnetic Semiconductors, 1–36. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-15856-8_1.

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Wolff, P. A. "Bound Magnetic Polarons in Diluted Magnetic Semiconductors." In Semimagnetic Semiconductors and Diluted Magnetic Semiconductors, 147–68. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3776-2_6.

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Hass, K. C. "Band Structure and Theory of Magnetic Interactions in Diluted Magnetic Semiconductors." In Semimagnetic Semiconductors and Diluted Magnetic Semiconductors, 59–82. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3776-2_3.

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de Jonge, W. J. M., and H. J. M. Swagten. "Magnetic Behavior of Diluted Magnetic Semiconductors." In NATO ASI Series, 419–38. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4899-2590-9_48.

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Takeyama, S. "Magnetic Polarons in Diluted Magnetic Semiconductors." In Springer Series in Solid-State Sciences, 179–209. Berlin, Heidelberg: Springer Berlin Heidelberg, 2000. http://dx.doi.org/10.1007/978-3-662-04143-7_6.

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Dietl, T., M. Sawicki, J. Jaroszyński, J. Wróbel, T. Wojtowicz, and A. Lenard. "Localization in Diluted Magnetic Semiconductors." In Localization and Confinement of Electrons in Semiconductors, 127–36. Berlin, Heidelberg: Springer Berlin Heidelberg, 1990. http://dx.doi.org/10.1007/978-3-642-84272-6_14.

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Kossut, J., and W. Dobrowolski. "Properties of diluted magnetic semiconductors." In Narrow-gap II–VI Compounds for Optoelectronic and Electromagnetic Applications, 401–29. Boston, MA: Springer US, 1997. http://dx.doi.org/10.1007/978-1-4613-1109-6_13.

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Konig, Jürgen, Hsiu-Hau Lin, and Allan H. MacDonald. "Ferromagnetism in Diluted Magnetic Semiconductors." In Springer Proceedings in Physics, 232–33. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59484-7_104.

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Twardowski, A. "Magnetism of Fe-Based Diluted Magnetic Semiconductors." In Semimagnetic Semiconductors and Diluted Magnetic Semiconductors, 253–71. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3776-2_11.

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Averous, M. "Background on Semimagnetic Semiconductors." In Semimagnetic Semiconductors and Diluted Magnetic Semiconductors, 1–22. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3776-2_1.

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Conference papers on the topic "DMS [Diluted Magnetic Semiconductors]"

1

Podoleanu, Adrian Gh, Radu G. Cucu, and David A. Jackson. "Magnetic field sensors utilizing diluted magnetic semiconductors." In SIOEL: Sixth Symposium of Optoelectronics, edited by Teodor Necsoiu, Maria Robu, and Dan C. Dumitras. SPIE, 2000. http://dx.doi.org/10.1117/12.378733.

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Li, M. K., S. J. Lee, S. U. Yuldashev, G. Ihm, T. W. Kang, Jisoon Ihm, and Hyeonsik Cheong. "Phase Transition of Diluted Magnetic Semiconductor." In PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666578.

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Du, Y. W., F. M. Zhang, D Wu, and S. J. Xiong. "Spin transport in Diluted Magnetic Semiconductors." In 2010 IEEE 3rd International Nanoelectronics Conference (INEC). IEEE, 2010. http://dx.doi.org/10.1109/inec.2010.5424472.

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Takahashi, Masao. "Transport properties of diluted magnetic semiconductors." In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994129.

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Krevet, R. "Magnetooptics on chromium-based diluted magnetic semiconductors." In 17th International Conference on Infrared and Millimeter Waves. SPIE, 2017. http://dx.doi.org/10.1117/12.2298229.

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Stephanovich, Vladimir A., Elena V. Kirichenko, and Yuri G. Semenov. "Photoinduced magnetization wave in diluted magnetic semiconductors." In Integrated Optoelectronic Devices 2006, edited by Kong-Thon Tsen, Jin-Joo Song, and Hongxing Jiang. SPIE, 2006. http://dx.doi.org/10.1117/12.639900.

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Stolichnov, I., S. W. E. Riester, H. J. Trodahl, N. Setter, A. W. Rushforth, K. W. Edmonds, R. P. Campion, C. T. Foxon, B. L. Gallagher, and T. Jungwirth. "Ferroelectric control of ferromagnetism in diluted magnetic semiconductors." In 2008 17th IEEE International Symposium on the Applications of Ferroelectrics (ISAF). IEEE, 2008. http://dx.doi.org/10.1109/isaf.2008.4693725.

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ICHIMURA, M., K. TANIKAWA, S. TAKAHASHI, G. BASKARAN, and S. MAEKAWA. "MAGNETIC IMPURITY STATES AND FERROMAGNETIC INTERACTION IN DILUTED MAGNETIC SEMICONDUCTORS." In Proceedings of the 8th International Symposium. WORLD SCIENTIFIC, 2006. http://dx.doi.org/10.1142/9789812773210_0038.

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Yamamoto, Y. "ESR study of diluted magnetic semiconductor (Ga,Cr)As." In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994134.

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Itaya, Shin-ichi. "Novel IV-group based diluted magnetic semiconductor: CrxGe1−x." In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994135.

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Reports on the topic "DMS [Diluted Magnetic Semiconductors]"

1

Zhang, Weidong, and Dwight Woolard. Magneto-Transpots in Interband Resonant Tunneling Diodes (I-RTDs) and Dilute Magnetic Semiconductor (DMS) I-RTDs. Fort Belvoir, VA: Defense Technical Information Center, March 2011. http://dx.doi.org/10.21236/ada577381.

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