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Dagnelund, Daniel. "Magneto-optical studies of dilute nitrides and II-VI diluted magnetic semiconductor quantum structures." Doctoral thesis, Linköpings universitet, Funktionella elektroniska material, 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-54695.
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This thesis work aims at a better understanding of magneto-optical properties of dilute nitrides and II-VI diluted magnetic semiconductor quantum structures. The thesis is divided into two parts. The first part gives an introduction of the research fields, together with a brief summary of the scientific results included in the thesis. The second part consists of seven scientific articles that present the main findings of the thesis work. Below is a short summary of the thesis. Dilute nitrides have been of great scientific interest since their development in the early 1990s, because of their unusual fundamental physical properties as well as their potential for device applications. Incorporation of a small amount of N in conventional Ga(In)As or Ga(In)P semiconductors leads to dramatic modifications in both electronic and optical properties of the materials. This makes the dilute nitrides ideally suited for novel optoelectronic devices such as light emitting devices for fiber-optic communications, highly efficient visible light emitting devices, multi-junction solar cells, etc. In addition, diluted nitrides open a window for combining Si-based electronics with III-V compounds-based optoelectronics on Si wafers, promising for novel optoelectronic integrated circuits. Full exploration and optimization of this new material system in device applications requires a detailed understanding of their physical properties. Papers I and II report detailed studies of effects of post-growth rapid thermal annealing (RTA) and growth conditions (i.e. presence of N ions, N2 flow, growth temperature and In alloying) on the formation of grown-in defects in Ga(In)NP. High N2 flow and bombardment of impinging N ions on grown sample surface is found to facilitate formation of defects, such as Ga interstitial (Gai) related defects, revealed by optically detected magnetic resonance (ODMR). These defects act as competing carrier recombination centers, which efficiently decrease photoluminescence (PL) intensity. Incorporation of a small amount of In (e.g. 5.1%) in GaNP seems to play a minor role in the formation of the defects. In GaInNP with 45% of In, on the other hand, the defects were found to be abundant. Effect of RTA on the defects is found to depend on initial configurations of Gai related defects formed during the growth. In Paper III, the first identification of an interfacial defect at a heterojunction between two semiconductors (i.e. GaP/GaNP) is presented. The interface nature of the defect is clearly manifested by the observation of ODMR lines originating from only two out of four equivalent <111> orientations. Based on its resolved hyperfine interaction between an unpaired electronic spin (S=1/2) and a nuclear spin (I=1/2), the defect is concluded to involve a P atom at its core with a defect/impurity partner along a <111> direction. Defect formation is shown to be facilitated by N ion bombardment. In Paper IV, the effects of post-growth hydrogenation on the efficiency of the nonradiative (NR) recombination centers in GaNP are studied. Based on the ODMR results, incorporation of H is found to increase the efficiency of the NR recombination via defects such as Ga interstitials. In Paper V, we report on our results from a systematic study of layered structures containing an InGaNAs/GaAs quantum well, by the optically detected cyclotron resonance (ODCR) technique. By monitoring PL emissions from various layers, the predominant ODCR peak is shown to be related to electrons in GaAs/AlAs superlattices. This demonstrates the role of the SL as an escape route for the carriers confined within the InGaNAs/GaAs single quantum well. The last two papers are within a relatively new field of spintronics which utilizes not only the charge (as in conventional electronics) but also the quantum mechanical property of spin of the electron. Spintronics offers a pathway towards integration of information storage, processing and communications into a single technology. Spintronics also promises advantages over conventional charge-based electronics since spin can be manipulated on a much shorter time scale and at lower cost of energy. Success of semiconductor-based spintronics relies on our ability to inject spin polarized electrons or holes into semiconductors, spin transport with minimum loss and reliable spin detection. In Papers VI and VII, we study the efficiency and mechanism for carrier/exciton and spin injection from a diluted magnetic semiconductor (DMS) ZnMnSe quantum well into nonmagnetic CdSe quantum dots (QD’s) by means of spin-polarized magneto PL combined with tunable laser spectroscopy. By means of a detailed rate equation analysis presented in Paper VI, the injected spin polarization is deduced to be about 32%, decreasing from 100% before the injection. The observed spin loss is shown to occur during the spin injection process. In Paper VII, we present evidence that energy transfer is the dominant mechanism for carrier/exciton injection from the DMS to the QD’s. This is based on the fact that carrier/exciton injection efficiency is independent of the width of the ZnSe tunneling barrier inserted between the DMS and QD’s. In sharp contrast, spin injection efficiency is found to be largely suppressed in the structures with wide barriers, pointing towards increasing spin loss.
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Zhou, Shengqiang. "Transition metal implanted ZnO: a correlation between structure and magnetism." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2008. http://nbn-resolving.de/urn:nbn:de:bsz:14-ds-1209998012687-36583.
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Nowadays ferromagnetism is often found in potential diluted magnetic semiconductor systems. However, many authors question the origin of this ferromagnetism, i.e. if the observed ferromagnetism stems from ferromagnetic precipitates rather than from carriermediated magnetic coupling of ionic impurities, as required for a diluted magnetic semiconductor. In this thesis, this question will be answered for transition-metal implanted ZnO single crystals. Magnetic secondary phases, namely metallic Fe, Co and Ni nanocrystals, are formed inside ZnO. They are - although difficult to detect by common approaches of structural analysis - responsible for the observed ferromagnetism. Particularly Co and Ni nanocrystals are crystallographically oriented with respect to the ZnO matrix. Their structure phase transformation and corresponding evolution of magnetic properties upon annealing have been established. Finally, an approach, pre-annealing ZnO crystals at high temperature before implantation, has been demonstrated to sufficiently suppress the formation of metallic secondary phases.
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Staneva, Maya. "Theoretical study of dilute magnetic semiconductors : Properties of (Ga,Mn)As." Thesis, Uppsala universitet, Institutionen för fysik och astronomi, 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-126096.
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The dilute magnetic semiconductor (Ga,Mn)As , which is the most interesting and promising material for spintronics applications, has been theoretically studied by using Density Functional Theory. First of all, calculations on GaAs were done and it was found that GaAs is a semiconductor with a direct band gap. The calculated value of the band gap is ~ 0.5eV. Secondly, the material iron was considered and it was confirmed that iron is a ferromagnetic metal with 2.2µB net magnetic moment. Then a magnetic impurity of manganese, Mn was introduced in the nonmagnetic GaAs and it became ferromagnetic with a net magnetic moment of 4µB. The origin of the ferromagnetic behaviour is discussed and also the Curie temperature TC of the material. It appeared that (Ga,Mn)As is a suitable material for DMS but TC has to be increased before (Ga,Mn)As could be used for spintronics applications and on that account some methods of increasing TC are considered at the end.Den magnetiska halvledaren (Ga,Mn)As som är det mest intressanta och lovande materialet för spinelektroniska tillämpningar har teoretiskt undersökts med hjälp av Täthetsfunktionalteorin. Först gjordes beräkningar på GaAs och det visade sig att GaAs är en halvledare med direkt bandgap. Det beräknade värdet på bandgapet är ca 0.5eV. Sedan var det järn som undersöktes och det blev bekräftat att järn är en ferromagnetisk metall med netto magnetisk moment lika med 2.2μB. Då magnetiska störningar i form av mangan atomer, Mn, infördes i det omagnetiska GaAs blev halvledaren ferromagnetisk med netto magnetisk moment lika med 4μB. Orsakerna till den ferromagnetiska ordningen diskuteras och även Curie temperaturen TC för materialet. Det visade sig att (Ga,Mn)As är ett lämpligt material för tillverkning av magnetiska halvledare men TC måste ökas innan (Ga,Mn)As skulle kunna användas i spinntroniska tillämpningar och av det skälet anges i slutet vissa metoder för att öka TC.
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Jeong, Byoung-Seong. "Growth and ferromagnetic semiconducting properties of titanium dioxide thin films an oxide-diluted magnetic semiconductor (o-dms) for spintronics /." [Gainesville, Fla.] : University of Florida, 2004. http://purl.fcla.edu/fcla/etd/UFE0004240.
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Haider, Muhammad Baseer. "Surface and Bulk Properties of Magnetically Doped GaN and Their Dependence on the Growth Conditions." Ohio University / OhioLINK, 2005. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1132011994.
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Khazen, Khashayar. "Ferromagnetic resonance investigation of GaMnAs nanometric layers." Paris 6, 2008. https://tel.archives-ouvertes.fr/tel-00329331v2.
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Cette thèse est dédiée à l’étude des propriétés magnétiques des couches nanométriques de GaMnAs par Résonance ferromagnétique (RFM). Trois séries des échantillons sont étudiées afin d' élucider l’influence des contraintes, la concentration des trous et la concentration de manganèse, sur les propriétés magnétiques de GaMnAs. Dans la première série, les échantillons de Ga1-xMnxAs avec x=0. 07 déposés sur les substrats de GaAs (en compression) et GaInAs (en extension) sont étudiés. Les résultats des mesures de l’aimantation, la résistivité et l’effet de Hall sont présentés. Les axes faciles de l’aimantation et le type d’anisotropie sont déterminés par mesures RFM. Les variations angulaires des spectres RFM sont étudiées en détails et le facteur g, la température de Curie et les constantes d’anisotropie sont déterminées en fonction de la température. La résonance des ondes de spin sont également observées et interprétées. Les observations sont comparées aux modèles phénoménologiques proposés et le spin stiffness et l’intégrale d’échange entre les ions de manganèse sont déduits. La deuxième étude concerne une série des échantillons de GaMnAs avec même niveau de dopage de Mn de 7% concentration atomique dont les concentrations de trous étaient variées via la passivation par l’hydrogène. Les concentrations des trous sont déduites des mesures d’effet Hall sous la condition de forts champs appliqués et à très basses températures. Les concentrations de trous mesurés correspondent aux différents régimes de conductivités ; de régime isolant aux régimes bande d’impureté et métallique. Les échantillons sont caractérisés par magnétométrie SQUID et les mesures de résistivité. L’aimantation en fonction de la concentration de trous est comparée aux prédictions du modèle RKKY. Les mesures de ERDA sont appliquées à la fin de déterminer la concentration de hydrogène dans l’échantillon ferromagnétique avec la concentration de trous la plus faible dans la série. La structure des domaines de cet échantillon est étudiée par microscopie magnéto-optique d’effet Kerr. Les spectres RFM sont analysés en détail et la concentration de trous correspondant à la formation de l’ordre ferromagnétique est estimée à 1019cm-3. Les facteurs g dépendent de la concentration de trous et la température. La relation entre les facteurs g et les polarisations de trous des échantillons calculées théoriquement est présentée. L’étude d’anisotropie des échantillons est fournie la détermination des constantes d’anisotropie magnétocrystallines en fonction de la concentration de trous et la température. Leurs variations sont comparées aux modèles théoriques. Les surfaces d’énergie sont déduites des constantes d’anisotropie magnétocrystallines mesurées, sont calculées en fonction de l’aimantation et les orientations et les grandeurs du champ appliqué. L’influence d’augmentation du niveau de dopage, de 7% à 21% concentration atomique est étudiée dans la troisième série des échantillons. Contrairement des prédictions théoriques, la température de Curie n’est pas augmentée en dessous de 180K. Les paramètres de RFM sont comparés à ceux des échantillon standard de GaMnAs avec 7% concentration atomique de Mn. La raison est attribuée au haut niveau de la compensation magnétique. Les mesures sont également comparées aux prédictions théoriques basées sur les approximations de champ moyen. La relaxation de l’aimantation est étudiée en fonction des contraintes, la concentration de trous et Mn aussi bien que la température. Les constantes de damping, sont trouvées d’être anisotropes. Cette anisotropie, dépend fortement aux procès dont contribution est la dominante pour une configuration particulaire du systèmeThis thesis is dedicated to the study of the magnetic properties of GaMnAs nanometric layers by the ferromagnetic resonance (FMR) technique. Three series of samples have been studied to investigate independently the influence of the strain, the hole concentration and the Mn concentration on the magnetic properties of GaMnAs. In the first series, the Ga1-xMnxAs samples with x=0. 07, grown on GaAs (compressive strain) and GaInAs (tensile strain) substrates are studied. The results of magnetization, resistivity and Hall effect measurements are presented. From the FMR measurements the easy axes of magnetization and the type of magnetic anisotropy are determined. The angular variations of the FMR spectra are studied in detail and the g-factor, Curie temperature and the magnetocrystalline anisotropy constants are determined as function of temperature. Spin wave resonance were equally observed and interpreted. The observations are compared to the proposed phenomenological models and the spin stiffness and the exchange integral between the Mn ions are deducedThe second study concerns a series of GaMnAs samples with the same Mn doping level of 7% atomic concentration in which the hole concentrations was varied via a hydrogen passivation technique. The hole concentrations are deduced from Hall effect measurements in high fields and low temperatures. The measured hole concentrations correspond to different conductivity regimes from insulating to impurity band and metallic regimes. The samples are characterized by SQUID magnetometry and resistivity measurements. The magnetization as a function of hole concentration is compared to the predictions of the RKKY model. ERDA measurements are performed to determine the concentration of hydrogen in the ferromagnetic sample with the lowest hole concentration. The domain structure of this samples is investigated by magneto-optical Kerr effect microscopy. The FMR spectra are analyzed in details and the hole concentration corresponding to the onset of ferromagnetism is estimated to 1019cm-3. The g-factors depend on the hole concentration and temperature. The relation between the g-factors and the theoretically calculated hole polarization of the samples is presented. The anisotropy studies of the samples have provided the investigation of the magnetocrystalline anisotropy constants as a function of the hole concentration and the temperature. Their variations are compared to the theoretical models. The energy surfaces deduced from the measured magnetocrytalline anisotropy constants are calculated as a function of magnetization and applied field orientations and magnitudes. The influence of increasing the doping level from 7% to 21% atomic concentration is studied in the third series of samples. Contrary to the theoretical predictions, the critical temperature is not increased above 180K. The FMR parameters are compared to those of standard GaMnAs sample doped with 7%atomic concentration of Mn. The reason for no further increase in TC is attributed to high level of magnetic compensation. The measurements are also compared to the theoretical predictions based on the mean field approximations. The relaxation of the magnetization is studied as a function of strain, hole concentration, Mn concentration as well as temperature. The damping constants were found to be anisotropic. This anisotropy however depends strongly on the process whose contribution is dominant for a specific configuration of the system
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Le, thi Giang. "Synthèse par épitaxie et propriétés magnétiques des semiconducteurs ferromagnétiques dilués à base de GeMn." Thesis, Aix-Marseille, 2012. http://www.theses.fr/2012AIXM4026.
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Le développement des dispositifs issus de l'électronique de spin nécessite de nouveaux matériaux qui permettent d'injecter de manière efficace le courant polarisé en spin dans des semiconducteurs. Parmi de nombreux matériaux utilisés comme injecteurs de spin, les semiconducteurs ferromagnétiques dilués (DMS), obtenus en dopant des semiconducteurs avec des impuretés magnétiques tels que Mn ou Co, sont considérés comme des candidats potentiels pour l'injection de spin. Ces matériaux dopés deviennent ferromagnétiques tout en conservant leurs propriétés semiconductrices. Par conséquent, ils présentent une similarité d'impédance électrique par rapport aux substrats semiconducteurs, ce qui rend efficace l'injection de courant polarisé en spin dans ces derniers. Dans ce contexte, l'objectif principal de cette thèse consiste à étudier la cinétique de croissance des semiconducteurs ferromagnétiques dilués GeMn. Nous cherchons à déterminer les paramètres clés de la croissance des couches de GeMn, à savoir la température du substrat, et la concentration en Mn. Pour la fabrication de dispositifs électroniques fonctionnels, le challenge crucial est d'obtenir des DMS ayant une température de Curie (TC) bien supérieure à la température ambiante. Nous nous sommes donc concentrés sur la cinétique de formation de la phase nanocolonnaire GeMn possédant une TC au-delà de 400 KThe development of active spintronic devices requires new materials, which enable to efficiently inject spin-polarized currents into non-magnetic semiconductors. Among numerous materials that can be used as spin injectors, diluted magnetic semiconductors (DMS), obtained by doping standard semiconductors with magnetic impurities, such as Mn or Co, have emerged as potential candidates for spin injection. The materials become ferromagnetic while conserving their semiconducting properties. They exhibit therefore natural impedance match to host semiconductors and are expected to efficiently inject spin-polarized currents into semiconductors. In this context, the main objectives of this thesis work consist in studying the growth kinetics of GeMn-based diluted magnetic semiconductors. We aim at determining the main growth parameters, such as the substrate temperature and the Mn concentration, that govern the growth process of GeMn layers. Since for device applications it is crucial to obtain DMS exhibiting a Curie temperature (TC) well above room temperature, we have focused our attention to the kinetic formation of the GeMn nanocolumn phase, which exhibits a Curie temperature higher than 400 K
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Tran, Lien. "InSb semiconductors and (In,Mn)Sb diluted magnetic semiconductors." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2011. http://dx.doi.org/10.18452/16334.
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Im Rahmen dieser Arbeit wurden InSb- und verdünnt-magnetische In_{1-x}Mn_xSb Filme mittels Gasquellen-Molekularstrahlepitaxie hergestellt und deren strukturelle und elektronische Eigenschaften untersucht. Die 2 μm InSb-Dünnschichten wurden sowohl auf GaAs(001)-Substrat als auch um 4° in Richtung [110] fehlgeschnittenem Si(001)-Substrat hergestellt. Optimierte InSb-Schichten direkt auf GaAs zeigen eine hohe kristalline Qualität, niedriges Rauschen und eine Elektronenbeweglichkeit von 41100 cm^2/Vs bei 300 K. Die Ladungsträgerkonzentration beträgt etwa 2,9e16 cm^{-3}. Um InSb-Dünnschichten guter Qualität auf Si-Substrat zu realisieren, wurden fehlgeschnittene Substrate benutzt. Zur Reduzierung der Gitterfehlanpassung wurden Pufferschichten gewachsen. Eine Elektronenmobilität von 24000 cm^2/Vs und Ladungsträgerkonzentration von 2,6e16 cm^{-3} wurden bei 300 K nachgewiesen. Diese Probe enthält ein 0,06 μm GaAs/AlSb-Supergitter als Pufferschicht (Wachstumstemperatur war 340°C). Diese Probe zeigt der höheren Dichte der Microtwins und Stapelfehler als auch den Threading-Versetzungen in der schnittstellennahen Region geschuldet. Die Deep-Level Rauschspektren zeigen die Existenz von Deep-Levels sowohl in GaAs- als auch in Si-basierten Proben. Die InSb-Filme auf Si-Substrat zeigen einen kleineren Hooge-Faktor im Vergleich zu Schichten auf GaAs (300 K). Unter Anwendung der optimierten Wachstumsbedingungen für InSb/GaAs wurden verdünnt-magnetische In_{1-x}Mn_xSb-Schichten (bis zum 1% Mangan) auf GaAs (001)-realisiert. Mn verringert die Gitterkonstante und damit den Grad der Relaxation von (In,Mn)Sb-Filmen. In den Proben befindet sich Mn in zwei magnetischen Formen, sowohl als verdünnt-magnetischer Halbleiter (In,Mn)Sb, als auch als MnSb-Cluster. Die Cluster dominieren auf der Oberfläche. Die Curie-Temperatur, Tc, unterscheidet sich für die beiden Formen. Für (In,Mn)Sb ist Tc kleiner als 50 K. Die MnSb-Cluster zeigen dagegen ein Tc über 300 K.This dissertation describes the growth by molecular beam epitaxy and the characterization of the semiconductor InSb and the diluted magnetic semiconductor (DMS) In_{1-x}Mn_xSb. The 2 µm-thick InSb films were grown on GaAs (001) substrate and Si (001) offcut by 4° toward (110) substrate. After optimizing the growth conditions, the best InSb films grown directly on GaAs results in a high crystal quality, low noise, and an electron mobility of 41100 cm^2/V s Vs with associated electron concentration of 2.9e16 cm^{-3} at 300 K. In order to successfully grow InSb on Si, tilted substrates and the insertion of buffer layers were used. An electron mobility of 24000 cm^2/V s measured at 300 K, with an associated carrier concentration of 2.6e16 cm^{-3} is found for the best sample that was grown at 340°C with a 0.06 μm-thick GaSb/AlSb superlattice buffer layer. The sample reveals a density of microtwins and stacking faults as well as threading dislocations in the near-interface. Deep level noise spectra indicate the existence of deep levels in both GaAs and Si-based samples. The Si-based samples exhibit the lowest Hooge factor at 300 K, lower than the GaAs-based samples. Taking the optimized growth conditions of InSb/GaAs, the DMS In_{1-x}Mn_xSb/GaAs is prepared by adding Mn (x < 1%) into the InSb during growth. Mn decreases the lattice constant as well as the degree of relaxation of (In,Mn)Sb films. Mn also distributes itself to result in two different and distinct magnetic materials: the DMS (In,Mn)Sb and clusters MnSb. The MnSb clusters dominate only on the surface. For the DMS alloy (In,Mn)Sb, the measured values of Curie temperature Tc appears to be smaller than 50 K, whereas it is greater than 300 K for the MnSb clusters.
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Wang, Weigang. "Spin-dependent transport in magnetic tunnel junctions and diluted magnetic semiconductors." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 184 p, 2009. http://proquest.umi.com/pqdweb?did=1654494821&sid=3&Fmt=2&clientId=8331&RQT=309&VName=PQD.
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Tanaka, Hiroki. "Zeeman Splitting Caused by Localized sp-d Exchange Interaction in Ferromagnetic GaMnAs Observed by Magneto-Optical Characterization." Ohio University / OhioLINK, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1441982108.
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Horsfall, Alton Barrett. "Electrical and magnetic properties of II-VI diluted magnetic semiconductors." Thesis, Durham University, 1997. http://etheses.dur.ac.uk/4984/.
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The electrical and magnetic properties of MOVPE grown epitaxial layers of Hg(_1-x)Mn(_x)Te layers has been investigated using a number of techniques. The samples have been grown by the Inter Diffused Multilayer Process, (IMP) on (100) semi insulating GaAs substrates with ZnTe and CdTe buffer layers. The samples have been shown to show a number of phenomena nopt observed in the bulk material, such as an anomaly in the resistivity, rnagnetoresistance related to the intrinsic magnetism of the material, and saturation of the room temperature magnetisation. In general the samples are of a highly compensated nature with the value of |R(_H)e|(^-1) varying between l0(^14) and 5xI0(^17) cm(^-3) at 20K, the Hall mobilities varying between 8 and 3.5x10(^5) cm(^2)V(^-1)s(^-1) at 20K. Magnetically, the samples generally show a paramagnetic signal that is swamped by the diamagnetic background of the substrate and buffer layers. The paramagnetisrn can be well modelled using a Curie Weiss fit. A number of the samples show a saturation in the magnetisation, which, has been explained via the use of vacancy ordering within MnTe regions in the sample. The susceptibility of the samples has been investigated using a Faraday balance system, and this data has been fitted using; a cluster model for Mn ions within the sample. The photomagnetisation of Cd(_0.9)Mn(_0.1)Te:In has been investigated using a faraday balance system, and modelled using the work of Dietl and Sample, to calculate the number of polarons that had formed on donors in the sample, ΔN(_D)(^MAG) = 1.28x10(^15)cm(^-3). The number of donors in the sample has been measured by means of the Hall effect, ΔN(_D)(^ELEC) = 1.92x10(^15)cm(^-3), and this value compared to that obtained from the model. We have proposed a model to explain this discrepancy based on the concept of band tails in the impurity band.
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Ben, Cheikh Harrek Zouhour. "Étude des ondes de spin dans des puits quantiques CdMnTe." Thesis, Montpellier 2, 2013. http://www.theses.fr/2013MON20071/document.
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Cette thèse porte sur l'étude des ondes de spin dans des puits quantiques CdMnTe dopés n, par rotation Kerr résolue en temps (TRKR) et par mélange à quatre ondes (FWM). Nous avons étudié trois échantillons de haute mobilité et de caractéristiques différentes.La technique TRKR donne accès uniquement aux excitations de vecteur d'onde nul, dans notre cas l'onde spin-flip en q=0. Nous avons étudié l'anticroisement qui apparait entre l'onde spin-flip et l'excitation spin-flip des ions manganèse. Nous avons étudié la variation du gap, et donc de l'énergie de couplage, entre ces modes en fonction de la puissance d'excitation et du champ magnétique. En particulier nous avons étendu les mesures des modes mixtes à plus basse concentration en Mn (jusqu'à 0.07%) et contrairement à ce qui était attendu, nous avons trouvé que le régime de couplage fort persiste à cette concentration.Nous nous sommes ensuite intéressés à la détermination de la polarisation en spin ζ du gaz d'électrons bidimensionnel, qui peut être déduite de l'énergie de couplage entre les modes mixtes. Nous avons trouvé que la polarisation mesurée par cette méthode excède la polarisation théorique calculée en prenant en compte le renforcement de la susceptibilité par les effets à N corps. Nous avons également mesuré les temps de relaxation des électrons confinés dans le puits quantique, et nous avons montré l'influence de l'échauffement de l'échantillon par le laser sur le temps de relaxation de spin des électrons.Dans la deuxième partie de cette thèse, nous avons étudié par FWM l'amortissement et la dispersion des ondes de spin de vecteur d'onde non nul pour l'un de nos échantillons. Nous avons démontré qu'on peut effectivement générer les ondes de spin en excitation femtoseconde, et les détecter en FWM. Nous avons trouvé que leur dispersion est plus faible que celle observée dans les expériences de Raman. Cette faible dispersion pourrait être imputable à la forte densité d'excitation utilisée dans les expériences de FWM (typiquement trois à quatre ordres de grandeur supérieurs à celle du Raman), et/ou au fait que deux ondes de vecteur d'ondes q et –q, ayant des dispersions différentes, sont sondées simultanément en FWMThis thesis focuses on the study of spin waves in n-doped CdMnTe quantum wells using respectively time-resolved Kerr rotation (TRKR) and four-wave mixing (FWM) techniques. We studied three high mobility samples with different characteristics.The TRKR technique gives access only to zero wave vector excitations, in our case the spin- flip wave q = 0 . We studied the anticrossing that appears between the spin -flip wave and the manganese spin -flip excitation. We studied the gap variation energy between these modes as function on the power excitation and the magnetic field. In particular, we have extended the measurements of mixed modes at lower Mn concentration (up 0.07 %) and contrary to what were expected; we found that the strong coupling regime persists at this concentration.We are then interested in determining the two dimensional electron gas spin polarization ζ, which can be deduced from the energy coupling between the mixed modes. We found that the measured polarization exceeds the theoretical polarization calculated taking into account the increased susceptibility by many-body effects. We also measured the electron spin relaxation time and we have shown that it is influenced by thermal effects inherent to optical pump-probe experiments on this time.In the second part of this thesis, we studied by FWM the damping and the dispersion of the non-zero wave vector spin waves for one of our samples. We have demonstrated that we can actually generate spin waves in femtosecond excitation and deted them by FWM. We found that the dispersion is lower than that observed in the Raman experiments. This low dispersion may be due to the strong excitation density used in the FWM experiments (typically three to four orders of magnitude higher than the Raman ones) and / or the fact that two waves of wave vector q and - q, having different dispersions are simultaneously probed in FWM
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Huang, Lunmei. "Computational Material Design : Diluted Magnetic Semiconductors for Spintronics." Doctoral thesis, Uppsala : Acta Universitatis Upsaliensis, 2007. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-7800.
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Peleckis, Germanas. "Studies on diluted oxide magnetic semiconductors for spin electronic applications." Access electronically, 2006. http://www.library.uow.edu.au/adt-NWU/public/adt-NWU20070821.145447/index.html.
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Brieler, Felix [Verfasser]. "Nanostructured diluted magnetic semiconductors within mesoporous silica / Felix Brieler." Gießen : Universitätsbibliothek, 2012. http://d-nb.info/1063954878/34.
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Miao, Jingqi. "The theory of magnetic polarons and magnetic field effect in diluted magnetic semiconductors." Thesis, University of Hull, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.264955.
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Norberg, Nicholas S. "Magnetic nanocrystals : synthesis and properties of diluted magnetic semiconductor quantum dots /." Thesis, Connect to this title online; UW restricted, 2006. http://hdl.handle.net/1773/8625.
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Owen, Man Hon Samuel. "Electrical gating effects on the magnetic properties of (Ga,Mn)As diluted magnetic semiconductors." Thesis, University of Cambridge, 2010. https://www.repository.cam.ac.uk/handle/1810/228705.
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The aim of the research project presented in this thesis is to investigate the effects of electrostatic gating on the magnetic properties of carrier-mediated ferromagnetic Ga1-xMnxAs diluted magnetic semiconductors. (Ga,Mn)As can be regarded as a prototype material because of its strong spin-orbit coupling and its crystalline properties which can be described within a simple band structure model. Compressively strained (Ga,Mn)As epilayer with more complex in-plane competing cubic and uniaxial magnetic anisotropies is of particular interest since a small variation of these competing anisotropy fields provide a means for the manipulation of its magnetization via external electric field. An all-semiconductor epitaxial p-n junction field-effect transistor (FET) based on low-doped Ga0.975Mn0.025As was fabricated. It has an in-built n-GaAs back-gate, which, in addition to being a normal gate, enhances the gating effects, especially in the depletion of the epilayer, by decreasing the effective channel thickness by means of a depletion region. A shift in the Curie temperature of ~2 K and enhanced anisotropic magnetoresistance (AMR) (which at saturation reaches ~30%) is achieved with a depletion of a few volts. Persistent magnetization switchings with short electric field pulses are also observed. The magnitude of the switching field is found to decrease with increasing depletion of the (Ga,Mn)As layer. By employing the k . p semiconductor theory approach (performed by our collaborators in Institute of Physics, ASCR, Prague), including strong spin-orbit coupling effects in the host semiconductor valence band, a change in sign of Kc at hole density of approximately 1.5x1020 cm-3 is observed. Below this density, the [110]/[1⁻10] magnetization directions are favoured, consistent with experimental data. A double-gated FET, with an ionic-gel top-gate coupled with a p-n junction back-gate based on the same material, was also employed in an attempt to achieve larger effects through gating. It reaffirms the results obtained and demonstrates enhanced gating effects on the magnetic properties of (Ga,Mn)As.
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Mishra, Subodha. "Theory of photo-induced ferro-magnetism in dilute magnetic semiconductors." Diss., Columbia, Mo. : University of Missouri-Columbia, 2006. http://hdl.handle.net/10355/4413.
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Thesis (Ph. D.) University of Missouri-Columbia, 2006.The entire dissertation/thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file (which also appears in the research.pdf); a non-technical general description, or public abstract, appears in the public.pdf file. Title from title screen of research.pdf file (viewed on August 6, 2007) Includes bibliographical references.
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Gatuna, Ngigi wa. "Intrinsic vacancy chalcogenides as dilute magnetic semiconductors : theoretical investigation of transition-metal doped gallium selenide /." Thesis, Connect to this title online; UW restricted, 2007. http://hdl.handle.net/1773/10595.
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Radovanovic, Pavle V. "Synthesis, spectroscopy, and magnetism of diluted magnetic semiconductor nanocrystals /." Thesis, Connect to this title online; UW restricted, 2004. http://hdl.handle.net/1773/8494.
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Chakraborty, Akash. "Effets des inhomogénéités nanométriques sur les propriétés magnétiques de systèmes magnétiques dilués." Phd thesis, Université de Grenoble, 2012. http://tel.archives-ouvertes.fr/tel-00947328.
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Cette thèse est principalement consacrée à l'étude des inhomogénéités de taille nanométrique dans les systèmes magnétiques désordonnés ou dilués. La présence d'inhomogénéités, souvent mise en évidence dans de nombreux matériaux, donne lieu à des propriétés physiques intéressantes et inattendues. La possibilité de ferromagnétisme à l'ambiante dans certains matéraux a généré un grand enthousiasme en vue d'application dans la spintronique. Cependant, d'un point de vue fondamental la physique de ces systèmes reste peu explorée et mal comprise. Dans ce manuscrit, on se propose de fournir une étude théorique complète et détaillée des effets des inhomogenéités de tailles nanométriques sur les propriétés magnétiques dans les systèmes dilués. Tout d'abord, on montre que l'approche RPA locale autocohérente est l'outil le plus adapté et fiable pour un traitement approprié du désordre et de la percolation. Nous avons implémenté cet outil et étudié dans un premier temps, les propriétés magnétiques dynamiques d'un modèle Heisenberg dilué (couplages premiers voisins) sur un reseau cubique simple. Nous avons reproduit précisémment la disparition de l'ordre à longue portée au seuil de percolation et comparé ce travail à des études précédentes. Dans le cadre d'un Hamiltonien minimal (modèle $V$-$J$) nous avons ensuite étudié en détails les propriétés magnétiques de (Ga,Mn)As (température critique, excitations magnétiques, stiffness,..). Nous avons obtenu de très bon accords avec les calculs textit{ab initio} et les résulats expérimentaux. Finalement, nous avons étudié les effets des inhomogénéités dans les sytèmes dilués. Nous avons montré, qu'inclure des inhomogenéités pourrait s'averer être une voie très efficace et prometteuse pour dépasser l'ambiante dans de nombreux matériaux. Nous avons pu obtenir une augmentation colossale de la température critique dans certains cas comparée à celle des systèmes dilués homogènes. Nous avons atteint une augmentation de 1600% dans certains cas. Nous avons également analysé les effets des inhomogénéités sur les courbes d'aimantations, elles sont inhabituelles et peu conventionelles dans ces systèmes. Les spectres d'excitations magnétiques sont très complexes, avec des structures très riches, et présentent de nombreux modes discrets à haute energie. De plus, nos calculs ont montré que la ''spin-stiffness" est fortement supprimé par l'introduction d'inhomogénéités. Il reste encore de nombreuses voies à explorer, ce travail devrait servir de base à de futures études théoriques et expérimentales des systèmes inhomogènes.
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De, Ranieri Elisa. "Strain-induced effects on the magnetotransport properties of GaMnAs diluted magnetic semiconductors." Thesis, University of Cambridge, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.608470.
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Bergqvist, Lars. "Electronic Structure and Statistical Methods Applied to Nanomagnetism, Diluted Magnetic Semiconductors and Spintronics." Doctoral thesis, Uppsala University, Department of Physics, 2005. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-5732.
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This thesis is divided in three parts. In the first part, a study of materials aimed for spintronics applications is presented. More specifically, calculations of the critical temperature in diluted magnetic semiconductors (DMS) and half-metallic ferromagnets are presented using a combination of electronic structure and statistical methods. It is shown that disorder and randomness of the magnetic atoms in DMS materials play a very important role in the determination of the critical temperature.
The second part treats materials in reduced dimensions. Studies of multilayer and trilayer systems are presented. A theoretical model that incorporates interdiffusion in a multilayer is developed that gives better agreement with experimental observations. Using Monte Carlo simulations, the observed magnetic properties in the trilayer system Ni/Cu/Co at finite temperatures are qualitatively reproduced.
In the third part, electronic structure calculations of complex Mn-based compounds displaying noncollinear magnetism are presented. The calculations reproduce with high accuracy the observed magnetic properties in these compounds. Furthermore, a model based on the electronic structure of the necessary conditions for noncollinear magnetism is presented.
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Titov, Andrey. "Electronic properties of the diluted magnetic semiconductors : Ga1-xMnxN, Ga1-xMnxAs, Ge1-xMnx." Université Joseph Fourier (Grenoble), 2006. http://www.theses.fr/2006GRE10285.
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Les propriétés électroniques de (Ga,Mn)N ont été étudiées par spectroscopie d'absorption des rayons X au seuil K du Mn. Des calculs ab-initio ont été utilisés pour interpréter les spectres d'absorption de (Ga,Mn)N. Deux pré-pics sont présents dans le seuil du Mn: le premier pré-pic est attribué aux transitions électronique vers les états 3d du Mn de spin up, tandis que le second pré-pic correspond aux transitions vers les états 3d du Mn de spin down. Cette interprétation nous permet de déterminer que l'état électronique du Mn dans (Ga,Mn)N est Mn3+: deux pré-pics sont présents dans les spectres d'absorption du Mn3+ et un seul pré-pic reste dans les spectres du Mn2+. Ce changement des spectres a été vérifié expérimentalement sur des échantillons de (Zn,Mn2+)Te et (Ga,Mn2+)As. De plus, cette interprétation permet d'étudier la distribution du Mn dans (Ga,Mn)N: la forme des spectres d'absorption suggère que la distribution du Mn est homogène dans nos échantillons de (Ga,Mn)NElectronic properties of the diluted magnetic semiconductor (Ga,Mn)N were studied by x-ray absorption spectroscopy at the K-edge of Mn. The measured x-ray absorption spectra were further interpreted using the ab-initio calculations. Two pre-edge absorption lines are observed in the x-ray absorption spectra: the first line was attributed to electronic transitions into 3d states of Mn of spin up, while the second line corresponds to transitions into 3d states of Mn of spin down. This interpretation allows us to determine the valence state of Mn: two absorption lines are present in the pre-edge structure of Mn3+ and only one line remains in case of Mn2+. Such a change of the pre-edge structure was checked experimentally on (Zn,Mn2+)Te and on (Ga,Mn2+)As. In addition, the distribution of Mn in (Ga,Mn)N can be studied using the interpretation: the shape of the spectra points to a homogeneous distribution of Mn in our (Ga,Mn)N samples
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Mak, Chee-Leung. "Light scattering study of the diluted magnetic semiconductors Zn1-xCoxSe and Zn1-xFexSe /." The Ohio State University, 1993. http://rave.ohiolink.edu/etdc/view?acc_num=osu1487843688959851.
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Ali, Bakhtyar. "Study of titanium dioxide based dilute magnetic semiconductors the role of defects and dopants /." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 85 p, 2008. http://proquest.umi.com/pqdweb?did=1597633311&sid=20&Fmt=2&clientId=8331&RQT=309&VName=PQD.
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Liu, Mingde. "Magnetization-steps spectroscopy in dilute magnetic semiconductors and in molecular magnetism /." Thesis, Connect to Dissertations & Theses @ Tufts University, 1998.
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Thesis (Ph.D.)--Tufts University, 1998 .Adviser: Yaacov Shapira. Submitted to the Dept. of Physics. Includes bibliographical references. Access restricted to members of the Tufts University community. Also available via the World Wide Web;
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Sun, Yongke. "Theoretical studies of the electronic, magneto-optical, and transport properties of diluted magnetic semiconductors." [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0011604.
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Railson, Stuart Vaughan. "Optical spectroscopy of Cdâ†1â†â†â†xMnâ†xTe heterostructures." Thesis, University of East Anglia, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.318019.
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Diallo, Mamadou Lamine. "Apport de la sonde atomique tomographique dans l'étude structurale et magnétique du semi-conducteur magnétique 6H-SiC implanté avec du fer : vers un semi-conducteur magnétique à température ambiante." Thesis, Normandie, 2017. http://www.theses.fr/2017NORMR051/document.
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Dans la réalisation de nouveaux composants innovants de la spintronique, de grands espoirs sont placés sur les semi-conducteurs magnétiques dilués (DMS). L’enjeu technologique est de développer des matériaux ayant à la fois des propriétés semi-conductrices et ferromagnétiques. Le but de ce travail est de réaliser une étude nanostructurale et magnétique détaillée du système Fe :SiC candidat prometteur pour devenir un semi-conducteur magnétique dilué à température ambiante. Cependant les propriétés magnétiques du matériau (6H-SiC) implanté avec des métaux de transitions (MT) dépendent fortement de sa microstructure (concentration et nature du dopant, précipitation du dopant…). Afin d’appréhender l’ensemble des propriétés nanostructurales et magnétiques, nous avons étudié le système Fe :SiC à l’échelle de l’atome en utilisant la sonde atomique tomographique (SAT) couplée à la spectrométrie Mössbauer 57Fe. Des monocristaux 6H-SiC (0001) de type p et n (~10+18/cm3) ont été multi-implantés en 56Fe et 57Fe à différentes énergies et différentes fluences conduisant à une concentration atomique de (6% et 4%) de 20 à 120 nm de la surface. Dans le cadre de ce travail, nous avons pu suivre l’effet de la nanostructure du système Fe :SiC en fonction de la concentration de fer et des températures d’implantation et de recuit. Nous avons établi de nouveaux résultats : nature et dimension des nanoparticules, évaluation précise du nombre d’atomes de fer dilué dans la matrice SiC. Les différentes contributions ferromagnétiques et paramagnétiques sont identifiées et clairement expliquées grâce au couplage de techniques expérimentales comme la SAT, la spectrométrie Mössbauer, la magnétométrie SQUID (Superconducting Quantum Interference Device). Nous avons réussi à déterminer des conditions optimales pour l’obtention d’un DMS à température ambiante. En effet dans les échantillons implantés 4% Fe à 380°C, plus de 90% des atomes de Fe sont dilués. Ces atomes de Fe dilués contribuent majoritairement aux propriétés ferromagnétiques mesurées par SQUID et par spectrométrie Mössbauer à 300 K. Ces différents résultats expérimentaux mettent en lumière la possibilité de réalisation d’un nouveau (DMS) à température ambianteGreat hopes are placed on diluted magnetic semiconductors (DMS) for new components of spintronics. The challenge is to develop materials with both semiconducting and ferromagnetic properties. The aim of this work is to carry out a detailed nanostructural and magnetic study of the Fe: SiC candidate promising system to become a magnetic semiconductor diluted at room temperature. However, the magnetic properties observed in (6H-SiC) implanted with transition metals (TM) depend strongly on the material microstructure (content and nature of the dopant, precipitation of the dopant, etc.). In order to understand all the nanostructural and magnetic mechanisms, we studied the Fe: SiC system at the atomic scale using atom probe tomography (APT) and Mössbauer spectrometry. p and n single crystalline 6H-SiC near (0001)-oriented samples were submitted to multi-step implantations with 56Fe and 57Fe ions at different energies and fluences leading to an iron concentration (Cat =6 and 4%) at a depth between 20 nm and 120 nm from the sample surface. In this work, we were able to follow the effect of the nanostructure of the Fe: SiC system as a function of the iron concentration and the temperatures of implantations and annealing. We have established new results: nature and size of the nanoparticles, precise evaluation of the number of iron atoms diluted in the SiC matrix. The ferromagnetic and paramagnetic contributions are identified and clearly explained by the coupling of experimental techniques such as APT, Mössbauer spectrometry, SQUID (Superconducting Quantum Interference Device) magnetometry. We were able to put the material in optimal conditions for obtaining a DMS at room temperature. Indeed, the implanted samples (4% Fe) at 380°C more than 90% Fe atoms were distributed homogeneously. These Fe atoms are the main source of the ferromagnetic properties measured by SQUID and Mössbauer spectrometry at 300 K. These experimental results highlight the possibility of obtaining a new (DMS) at room temperature
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Kaspar, Tiffany C. "Materials and magnetic studies of cobalt-doped anatase titanium dioxide and perovskite strontium titanate as potential dilute magnetic semiconductors /." Thesis, Connect to this title online; UW restricted, 2004. http://hdl.handle.net/1773/9902.
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Tran, Lien [Verfasser], T. [Akademischer Betreuer] Masselink, H. [Akademischer Betreuer] Riechert, and G. [Akademischer Betreuer] Salamo. "InSb semiconductors and (In,Mn)Sb diluted magnetic semiconductors : growth and properties / Lien Tran. Gutachter: T. Masselink ; H. Riechert ; G. Salamo." Berlin : Humboldt Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2011. http://d-nb.info/1015081541/34.
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Wang, Jie. "Carrier concentration determination in GaMnAs by optical techniques /." View abstract or full-text, 2006. http://library.ust.hk/cgi/db/thesis.pl?PHYS%202006%20WANGJ.
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Guo, Bicheng. "Chemical synthesis and characterization of CdMnS and CdMnSe quantum dots /." View abstract or full-text, 2004. http://library.ust.hk/cgi/db/thesis.pl?PHYS%202004%20GUO.
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Thesis (M. Phil.)--Hong Kong University of Science and Technology, 2004.Includes bibliographical references (leaves 63-66). Also available in electronic version. Access restricted to campus users.
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Bombeck, Michael [Verfasser], Manfred [Akademischer Betreuer] Bayer, and Metin [Gutachter] Tolan. "High frequency magneto-acoustics in diluted magnetic semiconductors / Michael Bombeck. Betreuer: Manfred Bayer. Gutachter: Metin Tolan." Dortmund : Universitätsbibliothek Dortmund, 2014. http://d-nb.info/1101476400/34.
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Bombeck, Michael [Verfasser], Manfred Akademischer Betreuer] Bayer, and Metin [Gutachter] [Tolan. "High frequency magneto-acoustics in diluted magnetic semiconductors / Michael Bombeck. Betreuer: Manfred Bayer. Gutachter: Metin Tolan." Dortmund : Universitätsbibliothek Dortmund, 2014. http://nbn-resolving.de/urn:nbn:de:101:1-201605242288.
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Stanciu, Victor. "Magnetism of Semiconductors and Metallic Multilayers." Doctoral thesis, Uppsala : Acta Universitatis Upsaliensis : Univ.-bibl. [distributör], 2005. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-5844.
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Cygorek, Moritz [Verfasser], and Vollrath Martin [Akademischer Betreuer] Axt. "Quantum kinetic description of the spin dynamics in diluted magnetic semiconductors / Moritz Cygorek ; Betreuer: Vollrath Martin Axt." Bayreuth : Universität Bayreuth, 2017. http://d-nb.info/1127127349/34.
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Linneweber, Thorben [Verfasser], Ute [Akademischer Betreuer] Löw, and Florian [Gutachter] Gebhard. "Ab-initio Gutzwiller-DFT studies of diluted magnetic semiconductors / Thorben Linneweber ; Gutachter: Florian Gebhard ; Betreuer: Ute Löw." Dortmund : Universitätsbibliothek Dortmund, 2016. http://d-nb.info/1128401169/34.
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Linneweber, Thorben [Verfasser], Ute Akademischer Betreuer] Löw, and Florian [Gutachter] [Gebhard. "Ab-initio Gutzwiller-DFT studies of diluted magnetic semiconductors / Thorben Linneweber ; Gutachter: Florian Gebhard ; Betreuer: Ute Löw." Dortmund : Universitätsbibliothek Dortmund, 2016. http://nbn-resolving.de/urn:nbn:de:101:1-20170324909.
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Liu, William K. "Electron spin dynamics in quantum dots, and the roles of charge transfer excited states in diluted magnetic semiconductors /." Thesis, Connect to this title online; UW restricted, 2007. http://hdl.handle.net/1773/8588.
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Zhou, Shengqiang. "Transition metal implanted ZnO: a correlation between structure and magnetism." Doctoral thesis, Technische Universität Dresden, 2007. https://tud.qucosa.de/id/qucosa%3A23718.
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Nowadays ferromagnetism is often found in potential diluted magnetic semiconductor systems. However, many authors question the origin of this ferromagnetism, i.e. if the observed ferromagnetism stems from ferromagnetic precipitates rather than from carriermediated magnetic coupling of ionic impurities, as required for a diluted magnetic semiconductor. In this thesis, this question will be answered for transition-metal implanted ZnO single crystals. Magnetic secondary phases, namely metallic Fe, Co and Ni nanocrystals, are formed inside ZnO. They are - although difficult to detect by common approaches of structural analysis - responsible for the observed ferromagnetism. Particularly Co and Ni nanocrystals are crystallographically oriented with respect to the ZnO matrix. Their structure phase transformation and corresponding evolution of magnetic properties upon annealing have been established. Finally, an approach, pre-annealing ZnO crystals at high temperature before implantation, has been demonstrated to sufficiently suppress the formation of metallic secondary phases.
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Theodoropoulou, Nikoleta. "Experimental studies of spin dependent phenomena in Giant Magnetoresistance (GMR) and Dilute Magnetic Semiconductor (DMS) systems." [Gainesville, Fla.] : University of Florida, 2002. http://purl.fcla.edu/fcla/etd/UFE0000615.
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Barbosa, Cristiane Cupertino Santos. "Síntese e caracterização de nanopartículas de CeO2 dopadas com metais de transição : estudo das propriedades estruturais e magnéticas." Pós-Graduação em Física, 2018. http://ri.ufs.br/jspui/handle/riufs/8040.
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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior - CAPESIn this work we study the structural and magnetic properties of pure and TM-doped CeO2 nanoparticles (TM: Mn, Cr, Co and Fe) obtained by the co-precipitation and hydrothermal methods. X-ray diffraction (XRD) results allied to the Rietveld refinement method indicate that all samples present single-phase with structure isomorphous to the CeO2. Average crystallites size was determined using the full width at half maximum from XRD patterns and their sizes were from of 7 to 13 nm. Transmission electron microscopy (TEM) images 10% doped samples show the presence of particles with spherical-like morphology and average sizes in good agreement with the estimated by XRD. From ultraviolet–Visible (UV–Vis) spectroscopy absorption measurements we estimated the optoelectronic gap of the samples, which vary between 2.87 and 3.44 eV. Analyses from magnetization curves as a function of temperature (MvsT) using Curie-Weiss law show that the number of paramagnetic ions per molecule (n) increases with the increasing of the Mn concentration. Already for 10% doped samples with different ions the (n) obeys the following order Mn ˂ Fe ˂ Cr ˂ Co for samples obtained by co-precipitation and Co ˂ Cr ˂ Mn ˂ Fe for the samples obtained by hydrothermal synthesis. Magnetization curves as a function of the magnetic field (MvsH) show that the the systems present a weak ferromagnetic behavior at 5K and paramagnetic at temperature higher than 200 K.
Neste trabalho estudamos as propriedades estruturais e magnéticas de nanopartículas de CeO2 pura e dopadas com diferentes concentrações de metais de transição (MT: Mn, Cr, Co e Fe) obtidas pelo método de co-precipitação e de síntese hidrotérmica. Resultados de difração de raios X (DRX) aliados ao método de refinamento Rietveld indicam a formação de uma única fase isomorfa ao CeO2, cujos tamanhos médios das nanopartículas variam entre 7 e 13 nm quando sintetizadas por co-precipitação e entre 8 e 12 nm quando obtidas por síntese hidrotérmica. Imagens de microscopia eletrônica de transmissão (MET) das amostras dopadas com 10% dos metais de transição mostram a presença de partículas com morfologia tendendo à esferas e tamanhos médios das partículas em bom acordo com os tamanhos estimados por DRX. Através de medidas de absorção na região do ultravioleta ao visível (UV-vis) estimamos o gap optoeletrônico das amostras, os quais variam entre 2,87 e 3,44 eV. Resultados das medidas de magnetização em função temperatura (MvsT) usando a lei de Curie-Weiss indicam que o número de íons paramagnéticos por molécula cresce de forma sistemática com o aumento da concentração de Mn nos dois métodos de síntese. Já para o caso das amostras dopadas com 10% do MT, esse número obedece a seguinte ordem Mn ˂ Fe ˂ Cr ˂ Co para o sistema obtido por co-precipitação e Co ˂ Cr ˂ Mn ˂ Fe para o sistema obtido por síntese hidrotérmica. Medidas de magnetização em função do campo magnético (MvsH) mostram que as nanopartículas apresentam um possível ordenamento ferromagnético fraco em 5K e um comportamento típico de um material paramagnético acima de 200K.
São Cristóvão, SE
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Costa, Ivani Meneses. "Estudo das propriedades estruturais, ópticas e magnéticas de nanopartículas de Zn1-xMTxO (MT=Mn, Fe) obtidas por diferentes métodos de síntese." Universidade Federal de Sergipe, 2015. https://ri.ufs.br/handle/riufs/5325.
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Coordenação de Aperfeiçoamento de Pessoal de Nível SuperiorIn this work we have studied the magnetic, optical and structural properties of ZnO nanoparticles pure and doped with different concentrations of Fe and Mn synthesized by three different synthesis methods; co-precipitation (CP), hydrothermal (SH) and thermal decomposition (DT). The samples were characterized by measurements of X-ray diffraction (XRD) and analyzed allied to Rietveld refinement method, absorption in the UV-Vis region, scanning and transmission electron microscopy (SEM and TEM), and magnetization measurements as a function of field and temperature (MvsH, MvsT). Through XRD analysis we have observed a dependence of the nanoparticle size with increasing temperature for both CP and SH methods well as a change in morphology with temperature for the samples system synthesized by SH. XRD analysis through the Williamson-Hall plot and TEM images show that particles obtained by SH and CP methods present an anisotropic growth, different of the particles obtained by DT method, that they present a spherical-like shape. The XRD results for Zn1-xFexO systems obtained by the CP and SH present only one phase but from point of view magnetic properties we have observed that these samples present transition at low temperature (T = 10 K) similar to an antiferromagnetic ordering. However, the Zn1-xFexO samples obtained by DT synthesis we have observed a paramagnetic behavior evidenced by MvsT curves. Therefore, at room temperature the MvsH curves indicated a ferromagnetic behavior. All Mn-doped ZnO samples present a paramagnetic behavior. The UV-Vis results show for all systems a slow increase in gap band with increases of dopant concentration.
Neste trabalho estudamos as propriedades magnéticas, ópticas e estruturais de nanopartículas de ZnO puras e dopadas com diferentes concentrações Fe e Mn sintetizadas por três diferentes métodos de síntese; co-precipitação (CP), hidrotérmico (SH) e decomposição térmica (DT). As amostras foram caracterizadas por medidas de difração de raios X (DRX) e analisadas juntamente ao método de refinamento Rietveld, absorção na região UV-Vis, microscopia eletrônica de varredura e de transmissão (MEV e MET) e medidas de magnetização em função do campo e da temperatura (MvsH, MvsT). Através das análises de DRX, nós temos observado uma dependência do tamanho da nanopartícula com o aumento da temperatura para ambos os métodos CP e SH, bem como uma variação na morfologia com a temperatura para o sistema de amostras sintetizado pela SH. Análises do gráfico de Williamson-Hall e imagens de MET mostram que as partículas obtidas através dos métodos SH e CP apresentam um crescimento anisotrópico, diferentemente das obtidas pelo método de DT, as quais apresentam morfologia esférica. Além disso, os resultados de DRX mostram que os sistemas Zn1-xFexO obtidos pela CP e SH apresentam somente uma fase, porém do ponto de vista das propriedades magnéticas observamos que as amostras apresentam uma transição em baixa temperatura (T = 10 K) similar a um ordenamento antiferromagnético. Por outro lado, as amostras de Zn1-xFexO obtidas pela síntese de DT observamos um comportamento paramagnético evidenciados pelas curvas de MvsT. No entanto, em temperatura ambiente as curvas de MvsH indicaram um comportamento ferromagnético. Todas as amostras de ZnO dopadas com Mn apresentam um comportamento típico de um material paramagnético. Resultados de absorção de UV-Vis para todos os sistemas estudados mostram um leve aumento na energia de gap com o aumento da concentração do dopante.
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Gupta, Shalini. "Growth of novel wide bandgap room temperature ferromagnetic semiconductor for spintronic applications." Diss., Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/33809.
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This work presents the development of a GaN-based dilute magnetic semiconductor (DMS) by metal organic chemical vapor deposition (MOCVD) that is ferromagnetic at room temperature (RT), electrically conductive, and possesses magnetic properties that can be tuned by n- and p-doping. The transition metal series (TM: Cr, Mn, and Fe) along with the rare earth (RE) element, Gd, was investigated in this work as the magnetic ion source for the DMS. Single- phase and strain-free GaTMN films were obtained. Optical measurements revealed that Mn is a deep acceptor in GaN, while Hall measurements showed that these GaTMN films were semi-insulating, making carrier mediated exchange unlikely. Hysteresis curves were obtained for all the GaTMN films, and by analyzing the effect of n- and p-dopants on the magnetic properties of these films it was determined that the magnetization is due to magnetic clusters. These findings are supported by the investigation of the effect of TM dopants in GaN nanostructures which reveal that TMs enhance nucleation resulting in superparamagnetic nanostructures. Additionally, this work presents the first report on the development of GaGdN by MOCVD providing an alternate route to developing a RT DMS. Room temperature magnetization results revealed that the magnetization strength increases with Gd concentration and can be enhanced by n- and p-doping, with holes being more efficient at stabilizing the ferromagnetic signal. The GaGdN films obtained in this work are single-phase, unstrained, and conductive making them suitable for the development of multifunctional devices that integrate electrical, optical, and magnetic properties.
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Fan, Junpeng. "Synthesis and advanced structural and magnetic characterization of mesoporous transition metal–doped sno2 powders and films." Doctoral thesis, Universitat Autònoma de Barcelona, 2017. http://hdl.handle.net/10803/457982.
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Aquesta Tesi doctoral comprèn la síntesi mitjançant nanoemmotllament (de l’anglès, nanocasting) i autoassemblatge per evaporació induïda (de l’anglès, evaporation–induced self–assembly) i la caracterització exhaustiva de pols i capes de SnO2 mesoporós dopat amb Ni i Cu. L’origen de les propietats magnètiques d’aquests materials es discuteix en detall.
En primer lloc, es van sintetitzar per nanoemmotllament a partir de motlles de sílice KIT–6, pols mesoporosa ordenada de SnO2 dopada amb diferents quantitats de Ni. Es va verificar la replicació correcta del motlle de sílice mitjançant microscòpia electrònica de rastreig. No es van detectar fases extres atribuïbles a Ni o NiO en els corresponents difractogrames excepte per a la mostra amb el dopatge més alt (9 at.% Ni), per a la qual es va observar la presència de NiO com a fase secundària. Es va estudiar l’estat d’oxidació i la distribució espaial de Ni en la pols mitjançant espectroscòpia fotoelectrònica de raigs X i espectroscòpia de pèrdua d’energia d’electrons, respectivament. Les mostres dopades amb Ni presenten resposta ferromagnètica tant a temperatura ambient com a baixa temperatura, com a conseqüència de la presència d’espins no compensats a la superfície de nanopartícules de NiO i vacants d’oxigen.
En segon lloc, es van sintetitzar capes primes continues i mesoporoses de SnO2 dopades amb Ni a partir de diferents relacions molars [Ni(II)]/[Sn(IV)] mitjançant un procés d’autoassemblatge sol–gel, utilitzant el copolímer tribloc P–123 com a agent director d’estructura. Una caracterització estructural profunda va evidenciar l’obtenció d’una estructura nanoporosa 3–D, de gruix comprès entre els 100 i 150 nm, i mida de porus de 10 nm. Els experiments de difracció de raigs X d’incidència rasant van posar de manifest que el Ni ocupava posicions substitucionals en la xarxa tipus rutil del SnO2, tot i que les anàlisis per dispersió d’energies de raigs X també van revelar la presència de petits clústers de NiO en les capes produïdes a partir de les relacions molars [Ni(II)]/[Sn(IV)] més elevades. Convé remarcar que les propietats magnètiques de les capes mesoporoses varien significativament en funció del percentatge de dopant. Les capes de SnO2 no dopades presenten un comportament diamagnètic, mentre que les dopades amb Ni mostren un clar senyal paramagnètic amb una petita contribució ferromagnètica.
En tercer lloc, també es van estudiar les propietats magnètiques de pols mesoporosa ordenada de SnO2 dopada amb Cu, obtinguda mitjançant nanoemmotllament a partir de sílice KIT–6. Per bé que una eventual contaminació amb impureses de Fe or la presència de vacants d’oxigen podrien explicar el comportament ferromagnètic observat a temperatura ambient, el ferromagnetisme a baixa temperatura es va atribuir únicament a la naturalesa nanoestructurada de les nanopartícules antiferromagnètiques de CuO formades (espins no compensats i shape–mediated spin canting). La menor temperatura de bloqueig, situada entre 30 i 50 K, i l’existència de petits desplaçaments verticals en els cicles d’histèresi van confirmar efectes de mida en les nanopartícules de CuOThis Thesis dissertation covers the synthesis by means of nanocasting and evaporation–induced self–assembly (EISA) methods as well as the advanced characterization of Ni, Cu–doped mesoporous SnO2 powders and films. The origin of the magnetic properties in these materials is also discussed in detail. Firstly, ordered mesoporous SnO2 powders doped with different Ni amounts were synthesized by nanocasting from mesoporous KIT–6 silica. Successful replication of the silica template was verified by scanning electron microscopy. No extra phases attributed to Ni or NiO were detected in the corresponding X–ray diffractograms except for the sample with the highest doping amount (e.g., 9 at.% Ni), for which NiO as secondary phase was observed. The oxidation state and spatial distribution of Ni in the powders was investigated by X–ray photoelectron spectroscopy and electron energy loss spectroscopy, respectively. Ni–containing powders exhibit ferromagnetic response at low and room temperatures, due to uncompensated spins at the surface of NiO nanoparticles and the occurrence of oxygen vacancies. Secondly, continuous mesoporous Ni–doped SnO2 thin films were synthesized from variable [Ni(II)]/[Sn(IV)] molar ratios through a sol–gel based self–assembly process, using P–123 triblock copolymer as a structure directing agent. A deep structural characterization revealed a truly 3–D nanoporous structure with thickness in the range of 100–150 nm, and average pore size about 10 nm. Grazing incidence X–ray diffraction experiments indicated that Ni had successfully substituted Sn in the rutile–type lattice, although energy–dispersive X–ray analyses also revealed the occurrence of small NiO clusters in the films produced from high [Ni(II)]/[Sn(IV)] molar ratios. Interestingly, the magnetic properties of these mesoporous films significantly vary as a function of the doping percentage. The undoped SnO2 films exhibit a diamagnetic behaviour, whereas a clear paramagnetic signal with small ferromagnetic contribution dominates the magnetic response of the Ni–doped mesoporous films. Thirdly, the magnetic properties of ordered mesoporous Cu–doped SnO2 powders, prepared by hard–templating from KIT–6 silica, were also studied. While Fe contamination or the presence of oxygen vacancies might be a plausible explanation of the room temperature ferromagnetism, the low–temperature ferromagnetism was mainly and uniquely assigned to the nanoscale nature of the formed antiferromagnetic CuO nanoparticles (uncompensated spins and shape–mediated spin canting). The reduced blocking temperature, which resided between 30 and 5 K, and small vertical shifts in the hysteresis loops confirmed size effects in the CuO nanoparticles.
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Wang, Lei. "Exploratory synthesis and characterization of a new class of mixed-anion framework chalcohalides and oxyhalide and its potential applications for diluted magnetic semiconductors." Connect to this title online, 2007. http://etd.lib.clemson.edu/documents/1181668846/.
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Laura, M. Robinson. "USING TIME-RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY TO EXAMINE EXCITON DYNAMICS IN II-VI SEMICONDUCTOR NANOSTRUCTURES." University of Cincinnati / OhioLINK, 2001. http://rave.ohiolink.edu/etdc/view?acc_num=ucin980259259.
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