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1

Sreeramana, Aithal, Aithal Shubrajyotsna, and K. Bhat G. "Study of Third Order Optical Nonlinearity in Disperse Orange-25 Dye-doped Polymer Films using CW Laser." International Journal of Applied Engineering and Management Letters (IJAEML) 1, no. 1 (2017): 18–35. https://doi.org/10.5281/zenodo.818692.

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The organic materials with the ability of self-focusing/defocusing through their light intensity-dependent refractive index and phase shift properties are potential materials in all-optical photonic devices have become an interesting topic of continuous research. Several organic materials including dye-doped polymer films are attracting many researchers due to their advantages in terms of enhanced efficiency, and acceptable mechanical properties to fabricate useful devices. In this paper, we have reported the nonlinear optical properties like nonlinear absorption and nonlinear refraction of an
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2

Shubhrajyotsna, Aithal, P. S. Aithal, and G. K. Bhat. "Comparative Study on Azo dye-doped Polymer Films for Optical Phase Conjugation." International Journal of Science and Research 4, no. 4 (2015): 436–41. https://doi.org/10.5281/zenodo.61724.

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In this paper, we have studied the linear optical properties and nonlinear optical Phase Conjugation properties of two azo-dye-doped polymer films by considering organic dyes disperse orange (DO-25) and disperse yellow (DY-7) doped in a polymer matrix Polymethyl methacrylate methacrylic acid (PMMA-MA). The nonlinear optical phase conjugation properties are studied using Degenerate Four-Wave Mixing set-up using 532 nm wavelength CW laser beam. The effect of dye concentration, the intensity of backward, forward pump, and the inter-beam angle between the probe and forward pump beam
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3

Shubrajyotsna, Aithal, S. Aithal P., and K. Bhat G. "TYPE 1 & TYPE 2 OPTICAL LIMITING STUDIES IN DISPERSE ORANGE-25 DYE-DOPED PMMA-MA POLYMER FILMS USING CW LASER." International Journal of Applied and Advanced Scientific Research 1, no. 1 (2016): 196–208. https://doi.org/10.5281/zenodo.208184.

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Materials with exceptional third order nonlinear optical properties are critical to the continuing development of photonics and electro-optical devices such as those used in optical communications, networking, optical computation for signal processing, and data storage devices. The nonlinear optical material research is generally focussed on improving the efficiency of optical wavelength conversion, optical amplification, nonlinear absorption, refractive index changes etc. which are input light intensity dependent. During last few years, the organic dye-doped polymer films are getting more att
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4

Shubhrajyotsna, Aithal, P. S. Aithal, and G. K. Bhat. "A Review on Organic Materials for Optical Phase Conjugation & All-optical Switches." International Journal of Management, IT and Engineering (IJMIE) 6, no. 1 (2016): 222–38. https://doi.org/10.5281/zenodo.62027.

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Nonlinear optical materials with optimum properties are essential in continuous development of photonic and electro-optical devices, used in optical communications, networking, optical computation for signal processing, and data storage equipments. The changing trend is to use organic materials/dyes that exhibit exceptional nonlinear optical properties instead of conventional materials which have comparatively low nonlinear properties. These organic materials/dyes are easy to prepare in solution or solid form. The resulting organic material has a low dielectric constan
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5

An, Ha-Rim, Hyelan An, Doh-Hyung Riu, and Hyo-Jin Ahn. "Improved Photovoltaic Properties Of Dye-Sensitized Solar Cells Using Laser Patterned F-Doped SnO2 Thin Films." Archives of Metallurgy and Materials 60, no. 2 (2015): 1241–45. http://dx.doi.org/10.1515/amm-2015-0106.

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Abstract We modified the surfaces of F-doped SnO2 thin films using laser patterning to improve the photovoltaic properties of dye-sensitized solar cells. To do so, we varied the laser power density and the distance between laser-patterned lines. First, we investigated three power densities. Higher densities led to higher sheet resistances owing to increases in surface roughnesses. The lowest power density increased surface roughness without electrical degradation. Next, we explored three line spacings at a fixed power density. The films with the narrowest spacing exhibited the highest power co
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6

Aivalioti, Chrysa, Maria Androulidaki, Katerina Tsagaraki, et al. "The Effect of Nitrogen as a Co-Dopant in p-Type NiO:Nb Films on the Photovoltaic Performance of NiO/TiO2 Transparent Solar Cells." Solids 5, no. 4 (2024): 651–64. https://doi.org/10.3390/solids5040044.

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Doping engineering has been applied in niobium-doped NiO (NiO:Nb) by adding nitrogen (N) in its structure. The rf-sputtered films were made from a Ni-Nb composite target on unheated substrates at 300 W rf power and 5 mTorr total pressure. The plasma contained 50% Ar and 50% O2 for the fabrication of the single-doped NiO:Nb film (AΝ film), and N2 gas for the incorporation of N in the Ni-O-Nb structure. The N2 in plasma was introduced by keeping constant the flow rates of O2 and N2 gasses (O2/N2 = 1) and reducing the amount of Ar gas, namely 94% Ar, 3% O2, and 3% N2 (film AN1); 50% Ar, 25% O2, a
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7

Papagiannis, Ioannis, Elias Doukas, Alexandros Kalarakis, George Avgouropoulos, and Panagiotis Lianos. "Photoelectrocatalytic H2 and H2O2 Production Using Visible-Light-Absorbing Photoanodes." Catalysts 9, no. 3 (2019): 243. http://dx.doi.org/10.3390/catal9030243.

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Hydrogen and hydrogen peroxide have been photoelectrocatalytically produced by electrocatalytic reduction using simple carbon electrodes made by depositing a mesoporous carbon film on carbon cloth. Visible-light-absorbing photoanodes have been constructed by depositing mesoporous CdS/TiO2 or WO3 films on transparent fluorine-doped tin oxide (FTO) electrodes. Both produced substantial photocurrents of up to 50 mA in the case of CdS/TiO2 and 25 mA in the case of WO3 photoanodes, and resulting in the production of substantial quantities of H2 gas or aqueous H2O2. Maximum hydrogen production rate
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8

Zhao, Yunpeng, Hari Bala, Fei Cheng, Yingjie Wen, and Boji Wang. "Preparation and Properties of MA0.9FA0.1PbI3 Perovskite Solar Cells by Br- doping." Academic Journal of Science and Technology 14, no. 3 (2025): 264–73. https://doi.org/10.54097/v4s1em69.

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In this study, under fixed cation stoichiometry, the effects of Br⁻ doping with varying ratios on the structural and optoelectronic properties of perovskite films and corresponding device performance were systematically investigated. The substitution of Br⁻ for partial I⁻ in the perovskite lattice demonstrated significant morphological refinement and enhanced crystallographic quality, as evidenced by reduced defect density and grain boundary formation. The optimized composition, MA₀.₉FA₀.₁PbI₂.₈₅Br₀.₁₅, exhibited superior film uniformity and crystallinity, which translated into improved photov
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9

RUSOP, M., T. SOGA, T. JIMBO, M. UMENO, and M. SHARON. "ELECTRONIC DOPING OF AMORPHOUS CARBON THIN FILMS." Surface Review and Letters 12, no. 04 (2005): 579–86. http://dx.doi.org/10.1142/s0218625x05007463.

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This paper reports on the successful deposition of boron ( B )-doped p-type ( p-C:B ) and phosphorus ( P )-doped n-type ( p-C:P ) carbon ( C ) films, and the fabrication of p-C:B on silicon ( Si ) substrate ( p-C:B/n-Si ) and n-C:P/p-Si cells by a pulsed laser deposition (PLD) technique using a graphite target at room temperature. The boron and phosphorus atoms incorporated in the films were determined by X-ray photoelectron spectroscopy (XPS) to be in the range of 0.2–1.75 and 0.22–1.77 atomic percentages, respectively. The cells performances have been given in the dark I–V rectifying curve a
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10

RUSOP, M., T. SOGA, T. JIMBO, and M. UMENO. "CONTRIBUTION OF n-TYPE AMORPHOUS CARBON ON THE FABRICATION OF n-C:P/p-Si SOLAR CELLS." Surface Review and Letters 11, no. 06 (2004): 569–75. http://dx.doi.org/10.1142/s0218625x04006578.

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The phosphorus doped n -type ( n - C : P ) carbon films and fabrication of n - C : P / p - Si heterojunction solid-state solar cells by pulsed laser deposition (PLD) technique at room temperature using graphite target have been studied. The P atoms incorporated in the films were determined by X-ray photoelectron spectroscopy (XPS) to be in the range of 0.22–1.77 atomic percentages. The cells performances have been given in the dark I–V rectifying curve and I–V working curve under illumination when exposed to AM 1.5 illumination condition (100 mW/cm2, 25°C). The open circuit voltage ( V oc ) an
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11

Faria, Helder Filipe, Joana Margarida Ribeiro, Torben Boll, and Carlos José Tavares. "Thermoelectric and Structural Properties of Transparent Sb-Doped ZnO Thin Films Sputtered in a Confocal Geometry." Coatings 13, no. 4 (2023): 735. http://dx.doi.org/10.3390/coatings13040735.

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This study focuses on understanding the influence of low Sb doping on ZnO’s electrical, optical, and thermoelectrical properties, while also studying its structural and morphological parameters. For this, several ZnO films with varying Sb target current densities, in the range of 0–0.27 mA/cm2, were produced by DC magnetron sputtering in a confocal geometry. As a result, thin ZnO:Sb films with an average transparency in the visible region greater than 80% are obtained, revealing for optimized conditions an absolute Seebeck coefficient of 100 μV/K and a respective power factor of 1.1 mW∙m−1∙K−2
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12

RUSOP, M., T. SOGA, and T. JIMBO. "PHOTOELECTRICAL PROPERTIES OF p-TYPE AND n-TYPE ELECTRICAL CONDUCTIVITY AMORPHOUS CARBON THIN FILMS FOR APPLICATION IN ECONOMICAL CARBON-BASED SOLAR CELLS." Surface Review and Letters 12, no. 03 (2005): 343–50. http://dx.doi.org/10.1142/s0218625x05007219.

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The successful deposition of boron ( B )-doped p-type ( p-C:B ) and phosphorous ( P )-doped n-type ( n-C:P ) carbon ( C ) films, and fabrication of p-C:B on silicon ( Si ) substrate ( p-C:B/n-Si ) and n-C:P/p-Si cells by the technique of pulsed laser deposition (PLD) using graphite target is reported. The cells' performances are represented in the dark I–V rectifying curve and I–V working curve under illumination when exposed to AM 1.5 illumination condition (100 mW/cm2, 25°C). The open circuit voltage (V oc ) and short circuit current density (J sc ) for p-C:B/n-Si are observed to vary from 2
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13

Aivalioti, Chrysa, Emmanouil G. Manidakis, Nikolaos T. Pelekanos, Maria Androulidaki, Katerina Tsagaraki, and Elias Aperathitis. "Anion and Cation Co-Doping of NiO for Transparent Photovoltaics and Smart Window Applications." Crystals 14, no. 7 (2024): 629. http://dx.doi.org/10.3390/cryst14070629.

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Materials engineering based on metal oxides for manipulating the solar spectrum and producing solar energy have been under intense investigation over the last years. In this work, we present NiO thin films double doped with niobium (Nb) and nitrogen (N) as cation and anion dopants (NiO:(Nb,N)) to be used as p-type layers in all oxide transparent solar cells. The films were grown by sputtering a composite Ni-Nb target on room-temperature substrates in plasma containing 50% Ar, 25% O2, and 25% N2gases. The existence of Nb and N dopants in the NiO structure was confirmed by the Energy Dispersive
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14

Mamedov, Huseyn, Syed Ismat Shah, Archil Chirakadze, Vusal Mammadov, Vusala Mammadova, and Khumar Ahmedova. "Photovoltaic performance of p-Si/Cd1-xZnxO heterojunctions." Photonics Letters of Poland 10, no. 1 (2018): 26. http://dx.doi.org/10.4302/plp.v10i1.797.

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Heterojunctions of p-Si/Cd1-xZnxO were synthesized by depositing of Cd1-xZnxO films on p-Si substrates by electrochemical deposition. The morphological properties of the films were studied by scanning microscopy. The electric and photoelectrical properties of heterojunctions were investigated depending on the deposition potential and films composition. Heterojunctions of p-Si/Cd1-xZnxO, which deposited at cathode potential of -1.2 V, shows good rectification (k=1640). Under AM1.5 conditions the maximal values of open-circuit voltage, short-circuit current, fill factor and efficiency of our bes
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15

Hossain, M. Khalid, M. F. Pervez, S. Tayyaba, et al. "Efficiency enhancement of natural dye sensitized solar cell by optimizing electrode fabrication parameters." Materials Science-Poland 35, no. 4 (2018): 816–23. http://dx.doi.org/10.1515/msp-2017-0086.

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Abstract Efficiency of dye-sensitized solar cell (DSSC) depends on several interrelated factors such as type and concentration of dye, type and thickness of photoelectrode and counter electrode. Optimized combination of these factors leads to a more efficient cell. This paper presents the effect of these parameters on cell efficiency. TiO2 nanoporous thin films of different thicknesses (5 μm to 25 μm) were fabricated on indium doped tin oxide (ITO) coated glass by doctor blading method and characterized by inverted microscope, stylus surface profiler and scanning electron microscope (SEM). Nat
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16

Krishnamoorthy, Sriram, Saurav Roy, Arkka Bhattacharyya, Carl Peterson, and Yizheng Liu. "(Invited) Beta-Gallium Oxide-Based Devices Towards Grid-Scale Electronics." ECS Meeting Abstracts MA2024-02, no. 32 (2024): 2311. https://doi.org/10.1149/ma2024-02322311mtgabs.

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Gallium Oxide is an emerging ultra-wide band gap semiconductor with promising material properties relevant for high performance power electronic devices. The availability of large area bulk substrates using melt growth techniques and the wide range of tunable n-type conductivity makes it a compelling semiconductor material platform for next-generation power devices. Lateral Devices: Homoepitaxial Si-doped channel layers are grown using metal-organic vapor phase epitaxy (MOVPE) on NCT and Synoptics (010) Ga2O3 bulk substrates after chemical cleaning to minimize impurities at the substrate-epita
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17

Dell'Oro, Ruben, Roberto Della Vedova, Stefano Marchionna, and Luca Magagnin. "Co-Electrodeposition of Metallic Precursors for Cd-Doped Cu2ZnSnS4 (CZCTS) Kesterite Absorber for Photoelectrochemical Water Splitting." ECS Meeting Abstracts MA2022-02, no. 22 (2022): 934. http://dx.doi.org/10.1149/ma2022-0222934mtgabs.

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Electrodeposition is widely studied in the fabrication of semiconductors for solar application, because of the low cost and easy scalability of this technique. For instance, in the last decades large effort has been dedicated to the electrodeposition of Cu2ZnSnS4 (CZTS) through different approaches, including either direct co-electrodeposition of the sulfide, the deposition of metallic alloy precursors or by stacked elemental layer, depositing Cu, Zn and Sn in sequence, then converting it into kesterite with thermal treatment in sulfur atmosphere.1–4 While being a promising alternative to CIGS
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18

Kumari, Pratima, Ajit Kumar, Harshita Lohani, Aakash Ahuja, Abhinanda Sengupta, and Sagar Mitra. "Robust-Dense Composite Cathode with Improved Three-Dimensional Ionic Percolation Network and Electrode/Electrolyte Interface for the Development of All-Solid-State Sodium Batteries." ECS Meeting Abstracts MA2023-02, no. 65 (2023): 3072. http://dx.doi.org/10.1149/ma2023-02653072mtgabs.

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All solid-state sodium batteries (AS3Bs) attract immense attention due to their excellent energy and power density, cycle life and thermal security [1]. However, the practical realization of AS3Bs is greatly affected by low to moderate ionic conductivity of the solid electrolyte, unstable electrode/electrolyte interface and poor ion and electron transport between the cathode active materials [2,3]. The unstable electrode/electrolyte interface with point contact leads to huge charge transfer resistance, stress generation and the delamination of the electrode/electrolyte interface during electro
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19

Binder, Andrew T., Andrew A. Allerman, Caleb E. Glaser, et al. "(Invited) Vertical Gallium Nitride Mosfets for Electric Drivetrains." ECS Meeting Abstracts MA2022-02, no. 37 (2022): 1361. http://dx.doi.org/10.1149/ma2022-02371361mtgabs.

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Wide-bandgap semiconductors have a significant advantage over conventional Si-based electronics by leveraging materials properties to achieve higher breakdown voltage, lower on-resistance, and high-frequency operation. For electric vehicle drivetrains, this translates to higher efficiency and power density, resulting in more miles driven per charge. This move towards wide-bandgap power electronics is necessary to achieve the U.S. Department of Energy (DOE) power electronics density target of 100 kW/L. Vertical gallium nitride-based power devices are expected to exceed Si and even SiC-based sys
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20

Aithal, Shubrajyotsna, P. S. Aithal, and G. K. Bhat. "Study of Third Order Optical Nonlinearity in Disperse Orange-25 Dye-doped Polymer Films using CW Laser." International Journal of Applied Engineering and Management Letters, June 30, 2017, 18–35. http://dx.doi.org/10.47992/ijaeml.2581.7000.0003.

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The organic materials with the ability of self-focussing/defocusing through their light intensity-dependent refractive index and phase shift properties are potential materials in alloptical photonic devices have become interesting topic of continuous research. Several organic materials including dye-doped polymer films are attracting many researchers due to their advantages in terms of enhanced efficiency, and acceptable mechanical properties to fabricate useful devices. In this paper, we have reported the nonlinear optical properties like nonlinear absorption and nonlinear refraction of an or
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21

Ma, Chang, Yue Wang, Binji Zhu, et al. "Sulfur‐Enriched Pitch‐Based Carbon Nanofibers With Lotus Root‐Like Axial Pores for Boosting Sodium Storage Performance." Battery Energy, February 26, 2025. https://doi.org/10.1002/bte2.70006.

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ABSTRACTPitch is a promising precursor for preparing carbon materials for anode of sodium‐ion batteries. Heteroatom doping is an effective way to increase the sodium storage capacity while constructing reasonable pores and nanosizing the carbon skeleton help to achieve a high‐rate performance of anodes. In this work, sulfur‐doped carbon nanofibers with lotus root‐like axial pores were prepared using coal liquefaction pitch as the main precursor by electrospinning, pre‐oxidation, sulfurization, and carbonization. A considerable content of 7.41 wt.% of sulfur was doped into the carbon skeleton a
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22

sprotocols. "Biofunctionalization of PDMS-based microfluidic systems." January 18, 2015. https://doi.org/10.5281/zenodo.14013.

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Authors: Bergoi Ibarlucea, Cesar Fernández-Sánchez, Stefanie Demming, Stephanus Büttgenbach & Andreu Llobera ### Abstract Three simple approaches for the selective immobilization of biomolecules on the surface of poly(dimethylsiloxane) (PDMS) microfluidic systems that do not require any specific instrumentation, are described and compared. They are based in the introduction of hydroxyl groups on the PDMS surface by direct adsorption of either polyethylene glycol (PEG) or polyvinyl alcohol (PVA) as well as by a liquid-based oxidation step. The hydroxyl groups are then silanized using a sila
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