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1

Sajedin, Maryam, I. T. E. Elfergani, Jonathan Rodriguez, Raed Abd-Alhameed, and Monica Fernandez Barciela. "A Survey on RF and Microwave Doherty Power Amplifier for Mobile Handset Applications." Electronics 8, no. 6 (2019): 717. http://dx.doi.org/10.3390/electronics8060717.

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This survey addresses the cutting-edge load modulation microwave and radio frequency power amplifiers for next-generation wireless communication standards. The basic operational principle of the Doherty amplifier and its defective behavior that has been originated by transistor characteristics will be presented. Moreover, advance design architectures for enhancing the Doherty power amplifier’s performance in terms of higher efficiency and wider bandwidth characteristics, as well as the compact design techniques of Doherty amplifier that meets the requirements of legacy 5G handset applications,
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2

Shi, Weimin, and Songbai He. "Design of a Tri-Band Doherty Amplifier Based on Generalized Impedance Inverter." Journal of Circuits, Systems and Computers 28, no. 10 (2019): 1950170. http://dx.doi.org/10.1142/s0218126619501706.

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This paper introduces a methodology for implementing multi-band Doherty power amplifiers. Traditionally, a 90∘ impedance inverter line is required in Doherty architecture. In this contribution, a generalized impedance inverter line is utilized to construct multi-band Doherty power amplifiers. A tri-band Doherty power amplifier operating at 1.15, 1.85 and 2.55[Formula: see text]GHz is designed to validate the proposed method. Measurement results show the fabricated Doherty power amplifier achieves 6[Formula: see text]dB output back-off drain efficiencies of 62.3%, 49.3% and 50.5% at 1.15, 1.85
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3

Barmala, Ehsan. "Design and simulate a doherty power amplifier using GaAs technology for telecommunication applications." Indonesian Journal of Electrical Engineering and Computer Science 15, no. 2 (2019): 845. http://dx.doi.org/10.11591/ijeecs.v15.i2.pp845-854.

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<span>In this paper, a Doherty power amplifier was designed and simulated at 2.4 GHz central frequency which has high efficiency. A Doherty power amplifier is a way to increase the efficiency in the power amplifiers. OMMIC ED02AH technology and PHEMT transistors, which is made of gallium arsenide, have been used in this simulation. The Doherty power amplifier unique feature is its simple structure which is consisting of two parallel power amplifiers and transmission lines. In order to integrate the circuit, the Doherty power transmission amplifier lines were implemented using an inductor
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4

Choi, Hojong. "A Doherty Power Amplifier for Ultrasound Instrumentation." Sensors 23, no. 5 (2023): 2406. http://dx.doi.org/10.3390/s23052406.

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The ultrasound instrumentation uses linear power amplifiers with low power efficiency, generating unwanted heat and resulting in the deterioration of the echo signal quality of measured targets. Therefore, this study aims to develop a power amplifier scheme to increase power efficiency while maintaining appropriate echo signal quality. In communication systems, the Doherty power amplifier has shown relatively good power efficiency while producing high signal distortion. The same design scheme cannot be directly applied to ultrasound instrumentation. Therefore, the Doherty power amplifier needs
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5

Yan, Jonmei J., Paul Draxler, Calogero D. Presti, Donald F. Kimball, and Peter M. Asbeck. "Digital predistortion of envelope-tracking power amplifiers under average power back-off and long-term average power efficiency for base-station applications." International Journal of Microwave and Wireless Technologies 5, no. 2 (2013): 171–77. http://dx.doi.org/10.1017/s1759078713000147.

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In many base-station applications, the load/usage fluctuates over time periods of hours to days, thereby varying the required transmit power by as much as 10 dB. It is desirable to maintain high efficiency and linearity in the power amplifier under these back-off conditions in order to achieve high long-term efficiency. This paper demonstrates a scalable digital predistortion (DPD) approach that can be applied under different power back-off levels in envelope-tracking (ET) amplifiers and quantifies the associated efficiency. Efficiency comparisons are made with other amplifier configurations s
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6

Darraji, Ramzi, Pedram Mousavi, and Fadhel M. Ghannouchi. "Doherty Goes Digital: Digitally Enhanced Doherty Power Amplifiers." IEEE Microwave Magazine 17, no. 8 (2016): 41–51. http://dx.doi.org/10.1109/mmm.2016.2561478.

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7

McKnight, Ken, Ali Darwish, and Mona Zaghloul. "A Compact Output Power Combiner for Broadband Doherty Power Amplifiers." Electronics 8, no. 3 (2019): 275. http://dx.doi.org/10.3390/electronics8030275.

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A novel compact output power combiner for broadband Doherty Power Amplifiers is proposed in this paper. The proposed output power combiner avoids the use of quarter-wave impedance transformers as they are sizable and work over narrow bandwidths. Instead, the proposed combiner utilizes a distributed Brune Section to implement a compact broadband impedance inverter. The final area of the proposed output combiner is λ2/48. When compared to the conventional broadband Doherty structure, which has an approximate area of λ2/16, this structure offers an approximate size reduction of 67%. The proposed
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8

Parisi, Alessandro, Giuseppe Papotto, Claudio Nocera, Alessandro Castorina, and Giuseppe Palmisano. "A Ka-Band Doherty Power Amplifier in a 150 nm GaN-on-SiC Technology for 5G Applications." Electronics 12, no. 17 (2023): 3639. http://dx.doi.org/10.3390/electronics12173639.

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This paper presents a Ka-band three-stage power amplifier for 5G communications, which has been implemented in a 150 nm GaN-on-SiC technology and adopts a Doherty architecture. The amplifier is made up of a 50 Ω input buffer, which drives a power splitter, thanks to which it delivers its output power to the two power amplifier units of the Doherty topology, namely the main and auxiliary amplifier. Finally, the outputs of the two power amplifiers are properly arranged in a current combining scheme that enables the typical load modulation of the Doherty architecture, alongside allowing power com
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9

Santhanam, Suganthi, and Palavesam Selvan. "New Approach of Efficiency Improvement in 10 dB Doherty Power Amplifier for 4G LTE and 5G Wireless Applications." Applied Computational Electromagnetics Society 36, no. 4 (2021): 379–85. http://dx.doi.org/10.47037/2020.aces.j.360403.

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In this research article, the design procedure and comparative analysis of the 10 dB Doherty power amplifier (DPA) with single and double auxiliary amplifier for maximum efficiency has been presented. A new Doherty amplifier structure with parallel two auxiliary amplifiers based on conventional design having optimum value of load resistance of 3.162 ohm has been proposed with higher efficiency of 85.803% and analyzed with n-tone sinusoidal signal. The proposed Doherty power amplifier can achieve drain efficiency of 83.299% & with single and 85.803% with dual auxiliary amplifier at the outp
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10

Abdulkhaleq, Ahmed M., Maan A. Yahya, Neil McEwan, et al. "Recent Developments of Dual-Band Doherty Power Amplifiers for Upcoming Mobile Communications Systems." Electronics 8, no. 6 (2019): 638. http://dx.doi.org/10.3390/electronics8060638.

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Power amplifiers in modern and future communications should be able to handle different modulation standards at different frequency bands, and in addition, to be compatible with the previous generations. This paper reviews the recent design techniques that have been used to operate dual-band amplifiers and in particular the Doherty amplifiers. Special attention is focused on the design methodologies used for power splitters, phase compensation networks, impedance inverter networks and impedance transformer networks of such power amplifier. The most important materials of the dual-band Doherty
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11

Li, Guojin, Wenyuan Xu, Jingchang Nan, and Mingming Gao. "Design of Efficient Concurrent Dual-Frequency Doherty Power Amplifier Based on Step Impedance Low-Pass Filter." Electronics 12, no. 19 (2023): 4092. http://dx.doi.org/10.3390/electronics12194092.

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In view of the peak-to-average power ratio (PAPR) of wireless communication base stations, a Doherty power amplifier with high efficiency maintained at output power back-off (OBO) can effectively solve the problem of low efficiency of the traditional power amplifier at the point of power back-off. In this paper, we propose a method to implement a dual-frequency Doherty power amplifier (DPA) using a step-impedance low-pass filter to improve the bandwidth and efficiency of the DPA at output power back-off (OBO). Step impedance low-pass filters are used to solve the bandwidth limitations in tradi
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12

Zhou, Xin Yu, Wing Shing Chan, Shichang Chen, and Wen Jie Feng. "Broadband Highly Efficient Doherty Power Amplifiers." IEEE Circuits and Systems Magazine 20, no. 4 (2020): 47–64. http://dx.doi.org/10.1109/mcas.2020.3027221.

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13

Ma, Chao. "Current State and Advanced Architectures of Doherty Power Amplifiers." Highlights in Science, Engineering and Technology 62 (July 27, 2023): 42–46. http://dx.doi.org/10.54097/hset.v62i.10422.

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Power amplifiers are critical components of wireless communication systems, providing the necessary power to transmit signals over long distances. Among various power amplifier solutions, the Dougherty power amplifier (DPA) remains a popular choice due to its high efficiency, speed, and power combination. However, conventional DPAs suffer from limited bandwidth and linearity, which have been major challenges in contemporary DPA design. This paper discusses the status, challenges, and potential solutions for improving the bandwidth and linearity of the DPAs. The limited bandwidth of conventiona
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14

Abdulaziz, Abdulrazaq, A. A. Adamu, A. S. Yaro, F. A. Jibrin, S. Babani, and M. H. Dankulu. "BANDWIDTH ENHANCEMENT IN DOHERTY POWER AMPLIFIERS: A COMPARISON OF CONVENTIONAL AND INVERTED ARCHITECTURES." FUDMA JOURNAL OF SCIENCES 9, no. 3 (2025): 55–65. https://doi.org/10.33003/fjs-2025-0903-3255.

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Conventional Doherty power amplifiers (DPAs) face bandwidth issues due to poor impedance matching and input phase design. This paper explores ways to enhance DPA performance in frequency response. The study focuses on optimizing output matching network parameters and the input phase slope between main and auxiliary amplifiers to improve bandwidth efficiency, especially for mobile wireless applications.We calculate the voltage standing wave ratio (VSWR) for each DPA amplification stage at different power levels using MATLAB. We examine conventional and inverted DPA configurations at 2.5 GHz wit
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15

Saad, Paul, Zahra Asghari, Christian Fager, and Hossein Mashad Nemati. "Driver Topologies for RF Doherty Power Amplifiers." IEEE Microwave and Wireless Components Letters 27, no. 1 (2017): 67–69. http://dx.doi.org/10.1109/lmwc.2016.2629977.

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16

Wang, Fang, Chi Li, Lili Qu, and Yufeng Peng. "Design of High-efficiency Continuous Class F Doherty Power Amplifier." Journal of Physics: Conference Series 2624, no. 1 (2023): 012018. http://dx.doi.org/10.1088/1742-6596/2624/1/012018.

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Abstract The high efficiency of the saturation state and rollback state is an important part of the front end of modern wireless communication systems. Improving the efficiency of RF power amplifiers is of great significance for energy saving and amplifier performance. Based on the traditional Doherty power amplifier, the harmonic suppression network is introduced before the fundamental frequency matching, so that the second harmonic impedance and third harmonic impedance can achieve continuous class F impedance matching conditions, and then the saturation efficiency and regression efficiency
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17

Moreno Rubio, Jorge Julian, and Abdolhamid Noori. "Doherty Power Amplifier Design via Differential Combining." Electronics 13, no. 19 (2024): 3961. http://dx.doi.org/10.3390/electronics13193961.

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This paper introduces a novel differential combiner designed to effectively address parasitic capacitances of transistors used in power amplifier (PA) designs with precise compensation at a specified frequency. The combiner consists of a λ/4 transmission line with an integrated capacitor of value 2COUT at its midpoint, which ensures accurate cancellation of parasitic effects. This design connects the drain pins of two transistors, which are considered identical in this configuration. By eliminating the need for complex parasitic compensation techniques, this method significantly simplifies the
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18

Zang, Yufeng, Weimin Shi, Jinting Liu, Tian Qi, and Mingyu Li. "Load Mismatch Compensation of Load-Modulated Power Amplifiers: A Comprehensive Review." Energies 18, no. 9 (2025): 2157. https://doi.org/10.3390/en18092157.

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With the diversification, acceleration, and arraying of wireless communication systems, power amplifiers (PAs) face stricter demands in terms of RF operation bandwidth, high-efficiency power range, and load mismatch compensation. After years of development, load-modulated PAs (LMPAs) can maintain high efficiency over a wide bandwidth and a larger output back-off (OBO) range. However, there is obvious performance degradation when the load impedance of the current LMPAs is mismatched. To ensure the perfect application of power amplifiers in wireless communication systems, load mismatch compensat
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19

Kumar, Rajesh, Binod Kumar Kanuajia, Santanu Dwari, Sandeep Kumar, and Hanjung song. "A high efficiency on‐chip reconfigurable Doherty power amplifier for LTE communication cells." Microwave and Optical Technology Letters 60, no. 10 (2018): 2569–77. http://dx.doi.org/10.1002/mop.31395.

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AbstractIn this paper, a high efficiency on‐chip reconfigurable Doherty power amplifier (DPA) with proposed topology is proposed for LTE or 4G communication cells. The proposed DPA consists of input driver topology, hybrid coupler, asymmetric amplifiers, and 1:1 balun filtered network. The proposed input driver circuit provides wide amplified signal operation within range of 2.3GHz to 6GHz with flat gain of 33 dB. The amplified signal is unsteadily divided into two paths toward the carrier and the power amplifier by 900 hybrid couplers and demonstrates 27.6 dB and 28.3 dB of gain along with 83
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20

Gangadharan, Shaina, Ruqaiya Khanam, and Veeraiyah Thangasamy. "A Study of RF Power Amplifiers for 5G and Future Generation Mobile Communication: Can FinFET Replace CMOS?" International Journal of Experimental Research and Review 46 (December 30, 2024): 222–39. https://doi.org/10.52756/ijerr.2024.v46.018.

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A low-power strategy that can manage analogue, digital, and RF functionalities on a similar chip is crucial for wireless systems. Various difficulties restrict the widespread adoption of CMOS power amplifiers despite the fact that they provide highly integrated, low-cost wireless communication. Some of the main issues with CMOS power amplifiers include non-linearity, low breakdown voltage, a lack of high-voltage capacitors, and incorrect RF models. The RF signal is amplified without distortions using a linear power amplifier (LPA), which is less effective whenever driven by constant voltage. I
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21

Giofrè, Rocco, Paolo Colantonio, Franco Giannini, et al. "A comprehensive comparison between GaN MMIC Doherty and combined class-AB power amplifiers for microwave radio links." International Journal of Microwave and Wireless Technologies 8, no. 4-5 (2016): 673–81. http://dx.doi.org/10.1017/s175907871600012x.

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A combined class-AB and a Doherty power amplifier conceived for microwave backhaul in the 7 GHz frequency band are here presented and compared. They are fabricated in the same GaN monolithic process and have identical total active device periphery. For the given application, the linearity-efficiency trade-off for the two architectures is discussed. The two modules have been thoroughly characterized in linear and non-linear continuous wave conditions. Then, to evaluate linearity under the actual operative conditions, a system level characterization has been carried out, applying a modulated inp
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22

Xiao, Manlin, and Wenyu Zhang. "A Design and Implementation of High-Efficiency Asymmetric Doherty Radio Frequency Power Amplifier for 5G Base Station Applications." Electronics 14, no. 8 (2025): 1586. https://doi.org/10.3390/electronics14081586.

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Utilizing asymmetric Doherty technology, this paper designs a high-efficiency radio frequency (RF) power amplifier (PA) for 5G base station applications. To improve the performance of PA and narrow the gap between simulations and practices, we use compatibility methods to design the circuit, which keeps the layout dynamically adjustable. By incorporating redundant U-shaped microstrip lines, the impedance matching network can be dynamically fine-tuned during debugging based on real-time hardware conditions. Furthermore, independent debugging paths for both main and auxiliary amplifiers are desi
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23

Piacibello, Anna, and Vittorio Camarchia. "Watt-Level Ka-Band Integrated Doherty Power Amplifiers: Technologies and Power Combination Strategies Invited Paper." Electronics 11, no. 1 (2021): 84. http://dx.doi.org/10.3390/electronics11010084.

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This paper discusses some of the design choices underlying the development of watt-level integrated Doherty power amplifiers in the K and Ka band, focusing on compound semiconductor technologies. The key aspect of on-chip power combination is discussed, presenting and comparing some of the possible alternatives. Then, the impact on the achievable bandwidth and performance of different parameters is quantified, adopting an approximate analysis, which focuses on the Doherty output combiner and allows estimating the non-linear performance of the amplifier thanks to some simplifying assumptions, w
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24

Sun, Jun. "A multi-objective optimization based doherty power amplifier and its matching network optimization method." PLOS ONE 18, no. 12 (2023): e0293371. http://dx.doi.org/10.1371/journal.pone.0293371.

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In the actual design process of traditional power amplifiers, there is a problem of being cumbersome and unable to simultaneously meet low power and saturation modes. Therefore, an improved multi-objective optimization algorithm proposed by decomposition is introduced to optimize its matching network to achieve overall optimization design of power amplifiers. The algorithm, matching network, and optimized power amplifier performance are simulated and verified. The experimental outcomes denote that on the logic function with Zener diode transistor, the proposed algorithm has a mean generation d
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Aydin, Omer, Osman Palamutçuoğulları, and Binboğa Sıddık Yarman. "Effect of offset lines in Doherty power amplifiers." IEICE Electronics Express 12, no. 24 (2015): 20150867. http://dx.doi.org/10.1587/elex.12.20150867.

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Piazzon, Luca, Rocco Giofre, Paolo Colantonio, and Franco Giannini. "A METHOD FOR DESIGNING BROADBAND DOHERTY POWER AMPLIFIERS." Progress In Electromagnetics Research 145 (2014): 319–31. http://dx.doi.org/10.2528/pier14011301.

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27

Zhou, Xin Yu, Wing Shing Chan, Tushar Sharma, Wen Jie Jie, and Jing Xia. "Harnessing Harmonics in Doherty Power Amplifiers [Application Notes]." IEEE Microwave Magazine 22, no. 8 (2021): 16–31. http://dx.doi.org/10.1109/mmm.2021.3078042.

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28

Hao, Peng, Songbai He, Fei You, Jiayan Wu, Chuan Li, and Jun Peng. "Configurable Independently Tunable Linearizer for Doherty Power Amplifiers." IEEE Microwave and Wireless Components Letters 30, no. 11 (2020): 1077–80. http://dx.doi.org/10.1109/lmwc.2020.3026699.

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29

Kang, Daehyun, Jinsung Choi, Dongsu Kim, and Bumman Kim. "Design of Doherty Power Amplifiers for Handset Applications." IEEE Transactions on Microwave Theory and Techniques 58, no. 8 (2010): 2134–42. http://dx.doi.org/10.1109/tmtt.2010.2053074.

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30

Ivanyushkin, Roman Yu, and Kirill O. Razin. "ENERGY EFFICIENCY OF THE POWER AMPLIFIER ACCORDING TO W. DOHERTY’S SCHEME WITH AUTOMATIC POWER ADJUSTMENT." SYNCHROINFO JOURNAL 9, no. 1 (2023): 25–29. http://dx.doi.org/10.36724/2664-066x-2023-9-1-25-29.

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At present, in relation to the power amplifiers of digital television broadcast transmitters, the scheme proposed by engineer William Dougherty for the construction of broadcast transmitters with amplitude modulation is widely used. W. Dougherty’s method, today is practically the only solution for improving the energy efficiency of OFDM signal power amplifiers, as applied to terrestrial digital television transmitters, when the wide band of the envelope of such a signal does not allow the construction of a transmitter based on a polar architecture. Transmitters for digital terrestrial televisi
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31

Díez-Acereda, Victoria, Sunil Lalchand Khemchandani, Javier del Pino, and Ayoze Diaz-Carballo. "A Comparative Analysis of Doherty and Outphasing MMIC GaN Power Amplifiers for 5G Applications." Micromachines 14, no. 6 (2023): 1205. http://dx.doi.org/10.3390/mi14061205.

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A comparison between a fully integrated Doherty power amplifier (DPA) and outphasing power amplifier (OPA) for fifth Generation (5G) wireless communications is presented in this paper. Both amplifiers are integrated using pHEMT transistors from the OMMIC’s 100 nm GaN-on-Si technology (D01GH). After a theoretical analysis, the design and layout of both circuits are presented. The DPA uses an asymmetric configuration where the main amplifier is biased in class AB and the auxiliary amplifier is biased in class C, while the OPA uses two amplifiers biased in class B. In the comparative analysis, it
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Moreno Rubio, Jorge Julián, Edison Ferney Angarita Malaver, and Luis Ángel Lara González. "Wideband Doherty Power Amplifier: A Design Approach." Micromachines 13, no. 4 (2022): 497. http://dx.doi.org/10.3390/mi13040497.

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This paper presents a simple method to design wideband Doherty power amplifiers (DPAs) based on the synthesis of a combiner network which can mimic the response of an ideal compensation of the device reactive output equivalent network and exploit the maximum power capabilities of the device. Using the Wolfspeed’s CGH40006 and CG2H40025 GaN HEMT devices, two DPAs were designed and simulated to demonstrate the effectiveness of the proposed approach. In both cases, a 1.4 GHz bandwidth was obtained together with an efficiency higher than 44 and 49% at 6 dB OBO. The saturated output power was highe
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Aydin, Omer, Osman Palamutcuogullari, and Binboga Siddik Yarman. "Effect of input phase mismatch in Doherty power amplifiers." IEICE Electronics Express 13, no. 20 (2016): 20160870. http://dx.doi.org/10.1587/elex.13.20160870.

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Shao, Jin, Rongguo Zhou, Han Ren, et al. "Design of GaN Doherty Power Amplifiers for Broadband Applications." IEEE Microwave and Wireless Components Letters 24, no. 4 (2014): 248–50. http://dx.doi.org/10.1109/lmwc.2013.2293659.

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Liang, Chenyu, Patrick Roblin, and Yunsik Hahn. "Accelerated Design Methodology for Dual-Input Doherty Power Amplifiers." IEEE Transactions on Microwave Theory and Techniques 67, no. 10 (2019): 3983–95. http://dx.doi.org/10.1109/tmtt.2019.2924373.

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Takayama, Yoichiro, Tetsuji Harada, Takayuki Fujita, and Kazusuke Maenaka. "Design method of microwave Doherty power amplifiers and its application to Si power MOSFET amplifiers." Electronics and Communications in Japan (Part II: Electronics) 88, no. 4 (2005): 9–17. http://dx.doi.org/10.1002/ecjb.20137.

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Hammi, Oualid. "Augmented Twin-Nonlinear Two-Box Behavioral Models for Multicarrier LTE Power Amplifiers." Scientific World Journal 2014 (2014): 1–7. http://dx.doi.org/10.1155/2014/762534.

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A novel class of behavioral models is proposed for LTE-driven Doherty power amplifiers with strong memory effects. The proposed models, labeled augmented twin-nonlinear two-box models, are built by cascading a highly nonlinear memoryless function with a mildly nonlinear memory polynomial with cross terms. Experimental validation on gallium nitride based Doherty power amplifiers illustrates the accuracy enhancement and complexity reduction achieved by the proposed models. When strong memory effects are observed, the augmented twin-nonlinear two-box models can improve the normalized mean square
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Kim, Jangheon, Bilel Fehri, Slim Boumaiza, and John Wood. "Power Efficiency and Linearity Enhancement Using Optimized Asymmetrical Doherty Power Amplifiers." IEEE Transactions on Microwave Theory and Techniques 59, no. 2 (2011): 425–34. http://dx.doi.org/10.1109/tmtt.2010.2086466.

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Akhter, Muhammad Ovais, and Najam Muhammad Amin. "Design and Optimization of 2.1 mW ULP Doherty Power Amplifier with Interstage Capacitances Using 65 nm CMOS Technology." Mathematical Problems in Engineering 2021 (November 19, 2021): 1–12. http://dx.doi.org/10.1155/2021/3364016.

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This research proposed the design and calculations of ultra-low power (ULP) Doherty power amplifier (PA) using 65 nm CMOS technology. Both the main and the peaking amplifiers are designed and optimized using equivalent lumped parameters and power combiner models. The operation has been performed in RF-nMOS subthreshold or triode region to achieve ultra-low power (ULP) and to improve the linearity of the overall power amplifier (PA). The novel design consumes a DC power of 2.1 mW, power-added efficiency (PAE) of 29.8%, operating at 2.4 GHz band, and output referred 1 dB compression point at 4.1
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Wiegner, Dirk, Gerhard Luz, Patrick Jüschke, et al. "AlGaN/GaN-based power amplifiers for mobile radio applications: a review from the system supplier's perspective." International Journal of Microwave and Wireless Technologies 2, no. 1 (2010): 95–104. http://dx.doi.org/10.1017/s175907871000022x.

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This paper gives a summarized overview on the progress and achievements on AlGaN/GaN high electron mobility transistors (HEMT)-based power amplifiers (PAs) for mobile radio applications which have been achieved within two national funded German projects during a period of six years. Starting with a first 34 dBm (2.5 W, peak) amplifier in 2003 the impressive progress toward highly efficient S-band mobile radio PAs with up to >50 dBm (100 W) peak output power is described by means of some selected single- and multiband amplifier demonstrators. This progress has been mainly enabled by clear pr
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41

Seidel, Andres, Jens Wagner, and Frank Ellinger. "Frequency analysis of load modulation networks for asymmetric Doherty power amplifiers in GaN." International Journal of Microwave and Wireless Technologies 14, no. 2 (2021): 123–33. http://dx.doi.org/10.1017/s1759078721001550.

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AbstractThis paper investigates the frequency response of load modulation networks for asymmetric Doherty power amplifiers (ADPA) with an output back-off power level larger than 6 dB and a power ratio of peak to main amplifier (N − 1) larger than 1. The influence of the main path impedance transformer (IT) on the Doherty impedances at main and peak path as well as on the ADPA's efficiency is analyzed. Scaling of the main IT's characteristic impedance via ξ indicates a maximum broadband matching for an input voltage Vin of ξ · Vin,max. By weighting the frequency- and ξ-dependent efficiency curv
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Jang, Youna, Kwanhun Jeong, Jiwon Kim, Daeung Lee, and Dal Ahn. "A Wideband Doherty Combiner with Phase Variation Compensation Using LTCC Applicable for High Power Transmission." Journal of Electromagnetic Engineering and Science 22, no. 5 (2022): 550–54. http://dx.doi.org/10.26866/jees.2022.5.r.121.

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In this paper, we propose a small-sized Doherty combiner with phase variation compensation using low temperature co-fired ceramic (LTCC) substrate. The proposed design theory for the Doherty combiner is derived using the phase calculation of the <i>S</i>-parameter based on the relation between the input and output ports. The proposed circuit is designed after determining the band edge frequency and the targeted degree of the phase balance. The proposed circuit is verified using the microstrip line and the LTCC substrate. The implemented structure, using LTCC as the substrate, is op
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Quaglia, Roberto, Marco Pirola, and Chiara Ramella. "Offset Lines in Doherty Power Amplifiers: Analytical Demonstration and Design." IEEE Microwave and Wireless Components Letters 23, no. 2 (2013): 93–95. http://dx.doi.org/10.1109/lmwc.2013.2241535.

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Hongyo, Reina, Yoshimasa Egashira, Thomas M. Hone, and Keiichi Yamaguchi. "Deep Neural Network-Based Digital Predistorter for Doherty Power Amplifiers." IEEE Microwave and Wireless Components Letters 29, no. 2 (2019): 146–48. http://dx.doi.org/10.1109/lmwc.2018.2888955.

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Grebennikov, Andrei, and Senad Bulja. "High-Efficiency Doherty Power Amplifiers: Historical Aspect and Modern Trends." Proceedings of the IEEE 100, no. 12 (2012): 3190–219. http://dx.doi.org/10.1109/jproc.2012.2211091.

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Esch, Jim. "High-Efficiency Doherty Power Amplifiers: Historical Aspect and Modern Trends." Proceedings of the IEEE 100, no. 12 (2012): 3187–89. http://dx.doi.org/10.1109/jproc.2012.2219195.

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Kang, Daehyun, Dongsu Kim, Yunsung Cho, Byungjoon Park, Jooseung Kim, and Bumman Kim. "Design of Bandwidth-Enhanced Doherty Power Amplifiers for Handset Applications." IEEE Transactions on Microwave Theory and Techniques 59, no. 12 (2011): 3474–83. http://dx.doi.org/10.1109/tmtt.2011.2171042.

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Kang, Daehyun, Yunsung Cho, Dongsu Kim, Byungjoon Park, Jooseung Kim, and Bumman Kim. "Impact of Nonlinear $C_{bc}$ on HBT Doherty Power Amplifiers." IEEE Transactions on Microwave Theory and Techniques 61, no. 9 (2013): 3298–307. http://dx.doi.org/10.1109/tmtt.2013.2273762.

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Nghiem, Xuan Anh, Junqing Guan, Thomas Hone, and Renato Negra. "Design of Concurrent Multiband Doherty Power Amplifiers for Wireless Applications." IEEE Transactions on Microwave Theory and Techniques 61, no. 12 (2013): 4559–68. http://dx.doi.org/10.1109/tmtt.2013.2281959.

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Shi, Weimin, Songbai He, Xiaoyu Zhu, et al. "Broadband Continuous-Mode Doherty Power Amplifiers With Noninfinity Peaking Impedance." IEEE Transactions on Microwave Theory and Techniques 66, no. 2 (2018): 1034–46. http://dx.doi.org/10.1109/tmtt.2017.2749224.

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