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Relevant bibliographies by topics / Dopant activation

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Book chapters
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Academic literature on the topic 'Dopant activation'

Author: Grafiati

Published: 4 June 2021

Last updated: 21 February 2023

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Journal articles on the topic "Dopant activation"

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Patel, Bhavink, Martin Saporito, Runye Cui, Khaled Malallah, Mohammad Alsubaiei, and Wei Du. "Investigation of Spin-on Dopants and Curing Temperature Effect on Dopant Activation." Applied Physics Research 11, no. 4 (2019): 11. http://dx.doi.org/10.5539/apr.v11n4p11.

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Spin-on dopant technique has been investigated in the paper. The boron and phosphorus were used as p- and n-type dopant sources and were deposited on silicon substrates, followed by the baking process to evaporate the solvents from spin-on dopant layers. The standard drive-in process was applied to diffuse and activate the dopants. The curing temperature varied from 150 to 200 oC to investigate the temperature effect on dopant activation. It is suggested that for our selected spin-on dopant sources, the curing temperature and time of 175 oC and 60 minutes would lead to the best result of dopan

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Abenante, Luigi. "Incomplete activation and ionization of dopants in Si at room temperature." AIP Advances 13, no. 1 (2023): 015109. http://dx.doi.org/10.1063/5.0117615.

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A new model for incomplete ionization of dopants in Si is presented, where the Fermi level of free carriers may displace with respect to the case of full activation of dopants. The curves of the ratio of free-carrier density and active-dopants density vs doping, which are calculated at partial activation of dopants with the new model, overlap exactly with the curves of the same quantity calculated at full activation of dopants with a reported model. Calculations are performed with and without reported parameterizations of the density of states and occupancy probability of the dopant band simul

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Shura, Megersa Wodajo. "Investigation of dopant centres dominating the conduction process in the bulk of un-doped GaSb." Journal of Theoretical and Applied Physics 13, no. 4 (2019): 315–27. http://dx.doi.org/10.1007/s40094-019-00355-3.

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Abstract In this paper, first, the theoretical description of the effects of the dopant densities and the activation energies on the ionization densities, the chemical potentials corresponding to each dopant levels, the majority carrier densities and the Fermi-energy levels in one-acceptor-level system, highly compensated system and two-acceptor-level system are described in detail. Upon fitting the theoretical to the experimental results obtained by the temperature-dependent Hall effect measurements for three samples of un-doped GaSb, the dopant densities and the activation energies for a sys

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Kuganathan, Navaratnarajah, Sashikesh Ganeshalingam, and Alexander Chroneos. "Defects, Diffusion, and Dopants in Li2Ti6O13: Atomistic Simulation Study." Materials 12, no. 18 (2019): 2851. http://dx.doi.org/10.3390/ma12182851.

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In this study, force field-based simulations are employed to examine the defects in Li-ion diffusion pathways together with activation energies and a solution of dopants in Li2Ti6O13. The lowest defect energy process is found to be the Li Frenkel (0.66 eV/defect), inferring that this defect process is most likely to occur. This study further identifies that cation exchange (Li–Ti) disorder is the second lowest defect energy process. Long-range diffusion of Li-ion is observed in the bc-plane with activation energy of 0.25 eV, inferring that Li ions move fast in this material. The most promising

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Kuganathan, Navaratnarajah. "Chalcogen Atom-Doped Graphene and Its Performance in N2 Activation." Surfaces 5, no. 2 (2022): 228–37. http://dx.doi.org/10.3390/surfaces5020016.

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In this work, we studied dispersion correction, adsorption and substitution of chalcogen dopants (O, S, Se and Te) on the surface of graphene using density functional theory. The results reveal that a single oxygen atom is more preferred for adsorption onto the graphene surface than the other dopants, with an adsorption energy of −0.84 eV. The preference of this dopant is evidenced by a greater charge transfer of 0.34 electrons from the graphene surface to the oxygen. The substitutional doping of oxygen is energetically more favourable than the doping of other atoms. While nitrogen activation

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Pennycook, S. J., R. J. Culbertson, and J. Narayan. "Formation of stable dopant interstitials during ion implantation of silicon." Journal of Materials Research 1, no. 3 (1986): 476–92. http://dx.doi.org/10.1557/jmr.1986.0476.

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High concentrations of self-interstitials are trapped by dopant atoms during ion implantation into Si. For group V dopants, these complexes are sufficiently stable to survive solid-phase-epitaxial (SPE) growth but break up on subsequent thermal processing and cause a transientenhanced diffusion. Dopant diffusion coefficients are enhanced by up to five orders of magnitude over tracer values and are characterized by an activation energy of approximately one half of the tracer values. In the case of group III dopants, any complexes formed during implantation do not survive SPE growth but a second

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Murata, Koichi, Shuhei Yagi, Takashi Kanazawa та ін. "Activation of two dopants, Bi and Er in δ-doped layer in Si crystal". Nano Futures 5, № 4 (2021): 045005. http://dx.doi.org/10.1088/2399-1984/ac421d.

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Abstract Conventional doping processes are no longer viable for realizing extreme structures, such as a δ-doped layer with multiple elements, such as the heavy Bi, within the silicon crystal. Here, we demonstrate the formation of (Bi + Er)-δ-doped layer based on surface nanostructures, i.e. Bi nanolines, as the dopant source by molecular beam epitaxy. The concentration of both Er and Bi dopants is controlled by adjusting the amount of deposited Er atoms, the growth temperature during Si capping and surfactant techniques. Subsequent post-annealing processing is essential in this doping techniqu

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Perera, Dilki, Sashikesh Ganeshalingam, Navaratnarajah Kuganathan, and Alexander Chroneos. "A Computational Study of Defects, Li-Ion Migration and Dopants in Li2ZnSiO4 Polymorphs." Crystals 9, no. 11 (2019): 563. http://dx.doi.org/10.3390/cryst9110563.

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Lithium zinc silicate, Li2ZnSiO4, is a promising ceramic solid electrolyte material for Li-ion batteries. In this study, atomistic simulation techniques were employed to examine intrinsic defect processes; long range Li-ion migration paths, together with activation energies; and candidate substitutional dopants at the Zn and the Si sites in both monoclinic and orthorhombic Li2ZnSiO4 phases. The Li-Zn anti-site defect is the most energetically favourable defect in both phases, suggesting that a small amount of cation mixing would be observed. The Li Frenkel is the second lowest energy process.

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Chung, Suk, Shane R. Johnson, Ding Ding, Yong-Hang Zhang, David J. Smith, and Martha R. McCartney. "Quantitative Analysis of Dopant Distribution and Activation Across p-n Junctions in AlGaAs/GaAs Light-Emitting Diodes Using Off-Axis Electron Holography." IEEE Transactions on Electron Devices 56, no. 10 (2009): 1919–23. http://dx.doi.org/10.1109/ted.2009.2025914.

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Off-axis electron holography has been used to measure the electrostatic potential profile across the p-n junction of an AlGaAs/GaAs light-emitting diode with linearly graded triangular AlGaAs barriers. Simulations of the junction profile showed small discrepancies with experiment when the nominal dopant concentrations of Si and Be impurities were used. Revised simulations reproduced the measurements reasonably using reduced dopant levels that reflected the efficiency of dopant activation. Band-edge diagrams simulated with the nominal and revised dopant concentrations were also compared in term

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Daubriac, Richard, Emmanuel Scheid, Hiba Rizk, et al. "A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si1− x Ge x and Si layers." Beilstein Journal of Nanotechnology 9 (July 5, 2018): 1926–39. http://dx.doi.org/10.3762/bjnano.9.184.

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In this paper, we present an enhanced differential Hall effect measurement method (DHE) for ultrathin Si and SiGe layers for the investigation of dopant activation in the surface region with sub-nanometre resolution. In the case of SiGe, which constitutes the most challenging process, we show the reliability of the SC1 chemical solution (NH4OH/H2O2/H2O) with its slow etch rate, stoichiometry conservation and low roughness generation. The reliability of a complete DHE procedure, with an etching step as small as 0.5 nm, is demonstrated on a dedicated 20 nm thick SiGe test structure fabricated by

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Dissertations / Theses on the topic "Dopant activation"

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Cerrina, Claudia. "Dopant activation and carrier transport in ion beam synthesised SiGe." Thesis, University of Surrey, 2003. http://epubs.surrey.ac.uk/843711/.

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Ion implantation has been investigated as an alternative technique to epitaxial deposition for the synthesis and doping of strained Si1-xGex alloy layers. Use of an all-implanted process has the potential to overcome many issues and difficulties of doping, reproducibility and yield in the commercial production of SiGe heterostructure devices. Samples with different germanium peak concentrations, x (0 ≤ x ≤ 15) were synthesised by implantation of Ge+ into bulk Si, and were heavily doped with boron or with arsenic (10 20 cm-3). Some layers were also post-amorphised by Si+ implantation. Roo

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Woodard, Eric M. "Low temperature dopant activation for applications in thin film silicon devices /." Link to online version, 2006. https://ritdml.rit.edu/dspace/handle/1850/1831.

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Canino, Mariaconcetta <1980&gt. "Phosphorus ion implantation in SiC: influence of the annealing conditions on dopant activation and defects." Doctoral thesis, Alma Mater Studiorum - Università di Bologna, 2007. http://amsdottorato.unibo.it/329/1/Canino-PhD_thesis.pdf.

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Canino, Mariaconcetta <1980&gt. "Phosphorus ion implantation in SiC: influence of the annealing conditions on dopant activation and defects." Doctoral thesis, Alma Mater Studiorum - Università di Bologna, 2007. http://amsdottorato.unibo.it/329/.

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Pasini, Luca. "Optimisation des jonctions de dispositifs (FDSOI, TriGate) fabriqués à faible température pour l’intégration 3D séquentielle." Thesis, Université Grenoble Alpes (ComUE), 2016. http://www.theses.fr/2016GREAT017/document.

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L’intégration 3D séquentielle représente une alternative potentielle à la réduction des dimensions afin de gagner encore en densité d’une génération à la suivante. Le principal défi concerne la fabrication du transistor de l’étage supérieur avec un faible budget thermique; ceci afin d’éviter la dégradation du niveau inférieur. L’étape de fabrication la plus critique pour la réalisation du niveau supérieur est l’activation des dopants. Celle-ci est généralement effectuée par recuit à une température supérieure à 1000 °C. Dans ce contexte, cette thèse propose des solutions pour activer les dopan

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Cornelius, Steffen. "Charge transport limits and electrical dopant activation in transparent conductive (Al,Ga):ZnO and Nb:TiO2 thin films prepared by reactive magnetron sputtering." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2014. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-156145.

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Transparent conductive oxides (TCOs) are key functional materials in existing and future electro-optical devices in the fields of energy efficiency, energy generation and information technology. The main application of TCOs is as thin films transparent electrodes where a combination of maximum electrical conductivity and transmittance in the visible to nearinfrared spectral range is required. However, due to the interdependence of the optical properties and the free electron density and mobility, respectively, these requirements cannot be achieved simultaneously in degenerately doped wide band

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Fisicaro, Giuseppe. "Micro-structural modifications of semiconductor systems under irradiation: experiment, modeling and simulation analysis." Doctoral thesis, Università di Catania, 2012. http://hdl.handle.net/10761/932.

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Research on the micro-structural modifications of semiconductor systems has played a central role in the last decades. In particular, Laser Thermal Annealing receives a great interest in the formation of ultra-shallow junctions essential in nanoscale metal-oxide-semiconductor technology. An intriguing poorly understood issue is the post-implant kinetics of the defects-dopant system in the extremely far-from-the equilibrium conditions caused by the laser irradiation both in the non-melting and melting regime. For this purpose, the activation mechanism in the solid phase of phosphorus impla

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Cornelius, Steffen [Verfasser], Wolfhard [Akademischer Betreuer] Möller, and Frank [Akademischer Betreuer] Richter. "Charge transport limits and electrical dopant activation in transparent conductive (Al,Ga):ZnO and Nb:TiO2 thin films prepared by reactive magnetron sputtering / Steffen Cornelius. Gutachter: Wolfhard Möller ; Frank Richter. Betreuer: Wolfhard Möller." Dresden : Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2014. http://d-nb.info/106904072X/34.

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Koffel, Stéphane. "Implantation, diffusion et activation des dopants dans le germanium." Grenoble INPG, 2008. http://www.theses.fr/2008INPG0094.

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Le germanium est un candidat pour la réalisation des futurs transistors MOS, du fait de la plus grande mobilité des porteurs par rapport au silicium. Il a été abandonné il y a une quarantaine d'années au profit du silicium et doit donc être redécouvert. Le but de ce travail est de comprendre les mécanismes mis en jeu au cours du dopage du germanium. Nous déterminons d'abord que le modèle de la densité d'énergie critique permet de prédire la formation et l'extension des couches amorphes dans le germanium. La vitesse d'épitaxie en phase solide est ensuite mesurée et pour la première fois dans le

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Nédélec, Sophie. "Diffusion et activation des dopants usuels dans les couches supérieures du MOS." Toulouse, INSA, 1996. http://www.theses.fr/1996ISAT0038.

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En technologie metal oxyde semi-conducteur (mos), la reduction des bilans thermiques engendre des phenomenes de desactivation des dopants dans le polysilicium de grille. La diminution de l'epaisseur de l'oxyde de grille entraine quant a elle un risque de penetration du bore venant du polysilicium a travers l'oxyde, semblant cependant etre limite par la nitruration de l'oxyde. La simulation correcte de ces phenomenes necessite l'etude de la redistribution des dopants dans le polysilicium, et dans l'oxyde pur ou nitrure. Dans l'oxyde, par ajustement de profils simules avec des profils experiment

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Book chapters on the topic "Dopant activation"

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Oesterlin, Peter. "Pulsed Laser Dopant Activation for Semiconductors and Solar Cells." In Subsecond Annealing of Advanced Materials. Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03131-6_9.

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Said, J., H. Jaouen, G. Ghibaudo, I. Stoemenos, and P. Zaumseil. "Dopant Activation and Defect Annihilation of Heavily Doped Arsenic Implanted Silicon Layers." In ESSDERC ’89. Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-52314-4_46.

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Gunawansa, T., Zhao Zhao, N. David Theodore, A. R. Lanz, and T. L. Alford. "The Extent of Dopant Activation After Microwave and Rapid Thermal Anneals Using Similar Heating Profiles." In EPD Congress 2015. John Wiley & Sons, Inc., 2015. http://dx.doi.org/10.1002/9781119093503.ch17.

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Gunawansa, T., Zhao Zhao, N. David Theodore, A. R. Lanz, and T. L. Alford. "The Extent of Dopant Activation after Microwave and Rapid Thermal Anneals Using Similar Heating Profiles." In EPD Congress 2015. Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-48214-9_17.

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Simoen, Eddy, A. Satta, Marc Meuris, et al. "Defect Removal, Dopant Diffusion and Activation Issues in Ion-Implanted Shallow Junctions Fabricated in Crystalline Germanium Substrates." In Solid State Phenomena. Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/3-908451-13-2.691.

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Duffy, R. "Metastable Activation of Dopants by Solid Phase Epitaxial Recrystallisation." In Subsecond Annealing of Advanced Materials. Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03131-6_3.

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Kinoshita, Akimasa, Junji Senzaki, Makoto Katou, et al. "Activation Treatment of Ion Implanted Dopants Using Hybrid Super RTA Equipment." In Silicon Carbide and Related Materials 2005. Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.803.

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Sajip, S., C. Rhodes, J. K. Bartley, A. Burrows, C. J. Kiely, and G. J. Hutchings. "The Effect of Cobalt Doping on the Structural Transformation Sequences Occurring During the Activation of Vanadium Phosphorus Oxide Catalysts." In Catalytic Activation and Functionalisation of Light Alkanes. Springer Netherlands, 1998. http://dx.doi.org/10.1007/978-94-017-0982-8_21.

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Jagannathan, Krishnan, Sikirman Arman, and Nerissa Mohamad Elvana. "Activation of Titanium Dioxide Under Visible-Light by Metal and Non-metal Doping." In ICGSCE 2014. Springer Singapore, 2015. http://dx.doi.org/10.1007/978-981-287-505-1_32.

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Kohzuki, Yohichi. "Study on Influence of a State of Dopants on Dislocation-Dopant Ions Interaction in Annealed Crystals." In Alkaline Chemistry and Applications [Working Title]. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.96395.

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Combination method of strain-rate cycling tests and application of ultrasonic oscillations was conducted for KCl:Sr2+ (0.035, 0.050, 0.065 mol.% in the melt) single crystals at low temperatures. The measurement of strain-rate sensitivity (λ) of flow stress under the application of ultrasonic oscillatory stress provides useful information on the interaction between a mobile dislocation and impurities (Sr2+ ions) during plastic deformation and the variation of λ with stress decrement (Δτ) due to oscillation has stair-like shape: The first plateau place ranges below the first bending point (τp1) at low stress decrement and the second one extends from the second bending point (τp2) at high stress decrement. The value of λ decreases with the Δτ between the two bending points. The τp1 is considered to represent the effective stress due to impurities when a dislocation begins to break-away from the impurities with the help of thermal activation during plastic deformation. Annealing the impure crystal by heat treatment, τp1 decreases obviously at low temperature and the critical temperature Tc, at which τp1 is zero, also becomes slightly smaller. Furthermore, it was investigated whether a change in the state of a small amount of impurities has an influential factor of the flow parameters (e.g., the activation energy, the density of forest dislocations) from the data analyzed in terms of Δτ vs. λ curve.

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Conference papers on the topic "Dopant activation"

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Lee, Yao-Jen. "Dopant activation by microwave anneal." In 2011 11th International Workshop on Junction Technology (IWJT). IEEE, 2011. http://dx.doi.org/10.1109/iwjt.2011.5969997.

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Woodard, E. M., R. G. Manley, G. Fenger, et al. "Low Temperature Dopant Activation for Integrated Electronics Applications." In 2006 16th Biennial University/Government/Industry Microelectronics Symposium. IEEE, 2006. http://dx.doi.org/10.1109/ugim.2006.4286374.

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Borland, John O., and Paul T. Konkola. "Implant dopant activation comparison between silicon and germanium." In 2014 20th International Conference on Ion Implantation Technology (IIT). IEEE, 2014. http://dx.doi.org/10.1109/iit.2014.6939769.

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Dev, K., C. T. M. Kwok, R. Vaidyanathan, R. D. Braatz, and E. G. Seebauer. "Controlling Dopant Diffusion and Activation through Surface Chemistry." In ION IMPLANTATION TECHNOLOGY: 16th International Conference on Ion Implantation Technology - IIT 2006. AIP, 2006. http://dx.doi.org/10.1063/1.2401459.

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Vengurlekar, A., and S. Ashok. "Dopant Activation Enhancement in Silicon by Hydrogen Treatment." In 2005 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2005. http://dx.doi.org/10.7567/ssdm.2005.p1-23.

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Borland, John, Seiichi Shishiguchi, Akira Mineji, et al. "High Dopant Activation And Low Damage P+ USJ Formation." In ION IMPLANTATION TECHNOLOGY: 16th International Conference on Ion Implantation Technology - IIT 2006. AIP, 2006. http://dx.doi.org/10.1063/1.2401470.

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Ivanov, Denis, Ilya Marinov, Yuriy Gorbachev, Alexander Smirnov, and Valeria Krzhizhanovskaya. "Computer Simulation of Laser Annealing of a Nanostructured Surface." In ASME 2009 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference. ASMEDC, 2009. http://dx.doi.org/10.1115/detc2009-87087.

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Laser annealing technology is used in mass production of new-generation semiconductor materials and nano-electronic devices like the MOS-based (metal–oxide–semiconductor) integrated circuits. Manufacturing sub-100 nm MOS devices demands application of ultra-shallow doping (junctions), which requires rapid high-temperature annealing to increase dopant electrical activation and remove implantation defects in the silicon [1].

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Lee, Yao-Jen, Yu-Lun Lu, Fu-Kuo Hsueh, et al. "3D 65nm CMOS with 320°C microwave dopant activation." In 2009 IEEE International Electron Devices Meeting (IEDM). IEEE, 2009. http://dx.doi.org/10.1109/iedm.2009.5424426.

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Yoo, Woo Sik, and Kitaek Kang. "Rapid Thermal Scanning for Dopant Activation for Advanced Junction Technology." In 2007 International Workshop on Junction Technology. IEEE, 2007. http://dx.doi.org/10.1109/iwjt.2007.4279962.

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Sun, Shiyu, Shashank Sharma, K. V. Rao, et al. "Integration of millisecond and spike anneals for dopant activation optimization." In 2013 13th International Workshop on Junction Technology (IWJT). IEEE, 2013. http://dx.doi.org/10.1109/iwjt.2013.6644512.

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