Log in

Relevant bibliographies by topics / Doped Quantum Well

Contents

Journal articles
Dissertations / Theses
Books
Book chapters
Conference papers
Reports

Academic literature on the topic 'Doped Quantum Well'

Author: Grafiati

Published: 4 June 2021

Last updated: 6 September 2023

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the lists of relevant articles, books, theses, conference reports, and other scholarly sources on the topic 'Doped Quantum Well.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Journal articles on the topic "Doped Quantum Well"

1

Hikosaka, K., S. Sasa, and Y. Hirachi. "Quantum-well-doped FET (QUD-FET)." Electronics Letters 22, no. 23 (1986): 1240. http://dx.doi.org/10.1049/el:19860850.

Full text

APA, Harvard, Vancouver, ISO, and other styles

2

Aristin, P., A. Torabi, A. K. Garrison, H. M. Harris, and C. J. Summers. "New doped multiple‐quantum‐well avalanche photodiode: The doped barrier Al0.35Ga0.65As/GaAs multiple‐quantum‐well avalanche photodiode." Applied Physics Letters 60, no. 1 (1992): 85–87. http://dx.doi.org/10.1063/1.107383.

Full text

APA, Harvard, Vancouver, ISO, and other styles

3

SHENG, HANYU. "ELECTROLUMINESCENCE ENHANCEMENT IN A DELTA-DOPED QUANTUM WELL OF A BIPOLAR RESONANT TUNNELING DIODE." Modern Physics Letters B 09, no. 14 (1995): 849–58. http://dx.doi.org/10.1142/s0217984995000802.

Full text

Abstract:

An analytical model of a δ-doped quantum well is developed. The results show that by using δ-doped quantum well structures, the area densities of the electrons and holes in the conduction and valence bands, respectively, can be increased by four orders of magnitudes compared with the n-i-p structure. Therefore the electroluminescence enhancement can be expected for the bipolar resonant tunneling diode of δ-doped quantum well.

APA, Harvard, Vancouver, ISO, and other styles

4

Takahashi, T., M. Nishioka, and Y. Arakawa. "Differential gain of GaAs/AlGaAs quantum well and modulation‐doped quantum well lasers." Applied Physics Letters 58, no. 1 (1991): 4–6. http://dx.doi.org/10.1063/1.104440.

Full text

APA, Harvard, Vancouver, ISO, and other styles

5

Perlin, E. Yu. "Photon avalanche in a doped quantum well." Optics and Spectroscopy 91, no. 5 (2001): 729–34. http://dx.doi.org/10.1134/1.1420854.

Full text

APA, Harvard, Vancouver, ISO, and other styles

6

Rodri´guez, F. J., and C. Tejedor. "Optical singularities in doped quantum-well wires." Physical Review B 47, no. 3 (1993): 1506–15. http://dx.doi.org/10.1103/physrevb.47.1506.

Full text

APA, Harvard, Vancouver, ISO, and other styles

7

Ren, F., C. W. Tu, R. F. Kopf, C. S. Wu, A. Chandra, and S. J. Pearton. "Partially doped GaAs single-quantum-well FET." Electronics Letters 25, no. 24 (1989): 1675. http://dx.doi.org/10.1049/el:19891123.

Full text

APA, Harvard, Vancouver, ISO, and other styles

8

White, J. A., and J. C. Inkson. "Quasiparticle properties of doped quantum-well systems." Physical Review B 43, no. 5 (1991): 4323–30. http://dx.doi.org/10.1103/physrevb.43.4323.

Full text

APA, Harvard, Vancouver, ISO, and other styles

9

Bandara, K. M. S. V., B. F. Levine, and J. M. Kuo. "p-doped single-quantum-well infrared photodetector." Physical Review B 48, no. 11 (1993): 7999–8001. http://dx.doi.org/10.1103/physrevb.48.7999.

Full text

APA, Harvard, Vancouver, ISO, and other styles

10

Im, Jin Seo, H. Kollmer, O. Gfrörer, J. Off, F. Scholz, and A. Hangleiter. "Piezoelectric Field Effect on Optical Properties of GaN/GaInN/AlGaN Quantum Wells." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 628–33. http://dx.doi.org/10.1557/s1092578300003161.

Full text

Abstract:

We designed and studied two sample groups: first, GaInN/AlGaN/GaN quantum wells with asymmetric barrier structure and secondly, GaInN/GaN quantum wells with asymmetrically doped barriers. Time-resolved measurements on the asymmetric structure reveal an enhanced oscillator strength when the AlGaN barrier is on top of the GaInN quantum well, indicating a better carrier confinement in such a structure. The photoluminescence emission energy of the GaInN/GaN quantum well with doped GaN barriers shifts towards higher energy than that of undoped samples due to screening, but only when the GaN barrier layer below the quantum well is doped. In contrast, the sample where only a GaN cap layer above the quantum well is doped, shows no blue-shift. These results, showing asymmetries in GaInN/GaN quantum wells, provide confirming evidence of the piezoelectric field effect and allow us to determine the sign of the piezoelectric field, which points towards the substrate in a compressively strained quantum well. Furthermore, we performed model calculations of the global band bending and the screening effect, which consistently explain our experimental findings.

APA, Harvard, Vancouver, ISO, and other styles

Dissertations / Theses on the topic "Doped Quantum Well"

1

Jaszek, Ryszard. "Electrical properties of modulation-doped InAs quantum-well heterostructures." Thesis, Imperial College London, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.286504.

Full text

APA, Harvard, Vancouver, ISO, and other styles

2

Huang, Xuren. "Linear, Nonlinear Optical and Transport Properties of Quantum Wells Composed of Short Period Strained InAs/GaAs Superlattices." Thesis, University of North Texas, 1993. https://digital.library.unt.edu/ark:/67531/metadc278855/.

Full text

Abstract:

In this work, ordered all-binary short-period strained InAs/GaAs superlattice quantum wells were studied as an alternative to strained ternary alloy InGaAs/GaAs quantum wells. InGaAs quantum wells QWs have been of great interest in recent years due to the great potential applications of these materials in future generations of electronic and optoelectronic devices. The all binary structures are expected to have all the advantages of their ternary counterparts, plus several additional benefits related to growth, to the elimination of alloy disorder scattering and to the presence of a higher average indium content.

APA, Harvard, Vancouver, ISO, and other styles

3

Becker, Christian Eberhard. "Transport properties of modulation doped Si/SiGe quantum well structures." Thesis, University College London (University of London), 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.404404.

Full text

APA, Harvard, Vancouver, ISO, and other styles

4

Sandhu, Jaswinder Singh. "Spin dynamics of carriers in doped GaAs quantum-well systems." Thesis, University of Cambridge, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.621987.

Full text

APA, Harvard, Vancouver, ISO, and other styles

5

Cesarini, Olivia. "Confinamento quantico nei Modulation-doped field-effect transistors." Bachelor's thesis, Alma Mater Studiorum - Università di Bologna, 2018. http://amslaurea.unibo.it/16935/.

Full text

Abstract:

Si è voluto studiare il concetto di confinamento quantico, concentrandosi in particolare sul Quantum well e sulla sua applicabilità nell'elettronica. Si è quindi approfondito il funzionamento del MODFET, il quale sfrutta un gas di elettroni bidimensionale, e quindi un Quantum well, come canale di conduzione, e si sono viste anche le tecniche di fabbricazione, in particolare l'MBE, di questi dispositivi. Ciò che distingue questi transistor da quelli tradizionali è l'alta mobilità, raggiunta grazie alla netta separazione delle cariche dai donatori (drogaggio modulato) poichè si evita lo scattering Coulombiano che rallenta le cariche. É stato recentemente scoperto che il MODFET opera oltre che come interruttore, più veloce dei MOSFET tradizionali, anche come rivelatore di onde Terahertz.

APA, Harvard, Vancouver, ISO, and other styles

6

Sun, Yun. "Electronic transport and optical properties of modulation doped dilute nitride quantum well structures." Thesis, University of Essex, 2009. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.502140.

Full text

APA, Harvard, Vancouver, ISO, and other styles

7

Shin, Dong Hoon. "Magnetotransport phenomena in modulation doped N-channel Si/ Si[subscript 0.7]Ge[subscript 0.3] quantum well structures." Thesis, University College London (University of London), 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.393626.

Full text

APA, Harvard, Vancouver, ISO, and other styles

8

Paul, Jagannath. "Coherent Response of Two Dimensional Electron Gas probed by Two Dimensional Fourier Transform Spectroscopy." Scholar Commons, 2017. http://scholarcommons.usf.edu/etd/6738.

Full text

Abstract:

Advent of ultrashort lasers made it possible to probe various scattering phenomena in materials that occur in a time scale on the order of few femtoseconds to several tens of picoseconds. Nonlinear optical spectroscopy techniques, such as pump-probe, transient four wave mixing (TFWM), etc., are very common to study the carrier dynamics in various material systems. In time domain, the transient FWM uses several ultrashort pulses separated by time delays to obtain the information of dephasing and population relaxation times, which are very important parameters that govern the carrier dynamics of materials. A recently developed multidimensional nonlinear optical spectroscopy is an enhanced version of TFWM which keeps track of two time delays simultaneously and correlate them in the frequency domain with the aid of Fourier transform in a two dimensional map. Using this technique, the nonlinear complex signal field is characterized both in amplitude and phase. Furthermore, this technique allows us to identify the coupling between resonances which are rather difficult to interpret from time domain measurements. This work focuses on the study of the coherent response of a two dimensional electron gas formed in a modulation doped GaAs/AlGaAs quantum well both at zero and at high magnetic fields. In modulation doped quantum wells, the excitons are formed as a result of the inter- actions of the charged holes with the electrons at the Fermi edge in the conduction band, leading to the formation of Mahan excitons, which is also referred to as Fermi edge singularity (FES). Polarization and temperature dependent rephasing 2DFT spectra in combination with TI-FWM measurements, provides insight into the dephasing mechanism of the heavy hole (HH) Mahan exciton. In addition to that strong quantum coherence between the HH and LH Mahan excitons is observed, which is rather surprising at this high doping concentration. The binding energy of Mahan excitons is expected to be greatly reduced and any quantum coherence be destroyed as a result of the screening and electron-electron interactions. Such correlations are revealed by the dominating cross-diagonal peaks in both one-quantum and two-quantum 2DFT spectra. Theoretical simulations based on the optical Bloch Equations (OBE) where many-body effects are included phenomenologically, corroborate the experimental results. Time-dependent density functional theory (TD-DFT) calculations provide insight into the underlying physics and attribute the observed strong quantum coherence to a significantly reduced screening length and collective excitations of the many-electron system. Furthermore, in semiconductors under the application of magnetic field, the energy states in conduction and valence bands become quantized and Landau levels are formed. We observe optical excitation originating from different Landau levels in the absorption spectra in an undoped and a modulation doped quantum wells. 2DFT measurements in magnetic field up to 25 Tesla have been performed and the spectra reveal distinct difference in the line shapes in the two samples. In addition, strong coherent coupling between landau levels is observed in the undoped sample. In order to gain deeper understanding of the observations, the experimental results are further supported with TD-DFT calculation.

APA, Harvard, Vancouver, ISO, and other styles

9

Prasad, Rajesh Shyam. "Magnetotransport studies in N-Channel Si:SiGe modulation doped quantum wells." Thesis, Imperial College London, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.309227.

Full text

APA, Harvard, Vancouver, ISO, and other styles

10

Wong, KuanMeng. "Modelling of intersubband absorption in modulation doped deep quantum wells." Thesis, University of Bath, 2007. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.438621.

Full text

APA, Harvard, Vancouver, ISO, and other styles

Books on the topic "Doped Quantum Well"

1

Ghatak, Kamakhya Prasad. Magneto thermoelectric power in heavily doped quantized structures. World Scientific, 2016.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

2

Quantum well and superlattice physics: 23-24 March 1987, Bay Point, Florida. SPIE, 1987.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

3

Fernandez-Serra, M. V., and X. Blase. Electronic and transport properties of doped silicon nanowires. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533046.013.2.

Full text

Abstract:

This article describes a number of theoretical works and methods dedicated to the analysis of the atomic and electronic structure, doping properties and transport characteristics of silicon nanowires (SiNWs). The goal is to show how quantum confinement and dimensionality effects can intrinsically change the behavior of SiNWs as compared to their bulk and thin film counterparts. The article begins with a review of work done on surface reconstructions and electronic structure of SiNWs as a function of system doping and passivation. It then considers the problem of doping in SiNWs as well as the methodology typically used to analyze the problems of transport. It also discusses the electronic transport properties of SiNWs as a function of dopant type, along with their chemical functionalization. Finally, it demonstrates how surface dangling-bond defects trap the impurities in SiNWs and neutralize them.

APA, Harvard, Vancouver, ISO, and other styles

4

Study of delta-doped quantum wells: Energy levels and applications in the terahertz region. Editorial Instituto Antioqueño de Investigación, 2022.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

5

Panigrahi, Muktikanta, and Arpan Kumar Nayak. Polyaniline based Composite for Gas Sensors. IOR PRESS, 2021. http://dx.doi.org/10.34256/ioriip212.

Full text

Abstract:

In this research work, we have demonstrated the synthesis, spectroscopic characteristics, thermal behaviour and DC conductivity of a few nanostructured composites, substituted conducting polymers (ICPs) and composites of ICPs. The physical properties of aforementioned composites are significantly changed by the doping with HCl, H2SO4, HNO3, H3PO4, or acrylic acid. The charge transport properties of these polymeric materials have been studied in detail because of their potential application in gas sensors. In the current work, varieties of conducting polymer based materials such as PANI-ES/Cloisite 20A nanostructured composite, acrylic acid (AA) doped PANI polymer, N-substituted conducting polyaniline polymer, DL−PLA/PANI-ES composites, poly methyl methacrylate (PMMA) based polyaniline composite, and inorganic acid doped polyaniline are sucessfuly synthesized using aniline/aniline hydrochloride as precursors in acidic medium. Particularly, AA based synthesised PANI polymer was found with higher solubility The spectroscopic, thermal stability, enthalpy of fusion, room temperature DC conductivity and temperature dependent DC conductivity measurements with and without magnetic was carried out with as-synthesized materials. The FTR/ATR−FTIR spectra indicated the presence of different functional groups in the as-prepared composite materials. The UV−Visible absorption spectroscopic analysis showed the presence of polaron band suggesting PANI-ES form. The Room temperature DC conductivity, temperature variation DC conductivity (in presence and absence of magnetic field), and magnetoresistance (MR) of as-prepared conducting polyaniline based were analysed. The highest room temperature DC conductivity value was obtained from H2SO4 doped based composite materials and all prepared conductive composites were followed ohms law. The low temperature DC conductivity was carried out in order to study the semiconducting nature of prepared materials. The Mott type VRH model was found to be well fitted the conductivity data and described the density of states at the Fermi level which is constant in this temperature range. From MR plots, a negative MR was observed, which described the quantum interference effect on hopping conduction. We discuss different gas analytes i.e., NO2, LPG, H2, NH3, CH4, and CO of conducting polymer based materials.

APA, Harvard, Vancouver, ISO, and other styles

6

Triberis, Georgios P. The Physics of Low-Dimensional Structures: From Quantum Wells to DNA and Artificial Atoms. Nova Science Pub Inc, 2006.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

Book chapters on the topic "Doped Quantum Well"

1

Plödereder, U., T. Dahinten, A. Seilmeier, and G. Weimann. "Intersubband Relaxation in Modulation Doped Quantum Well Structures." In NATO ASI Series. Springer US, 1992. http://dx.doi.org/10.1007/978-1-4615-3346-7_29.

Full text

APA, Harvard, Vancouver, ISO, and other styles

2

Masselink, W. Ted. "Electron Mobility in Delta-Doped Quantum Well Structures." In Negative Differential Resistance and Instabilities in 2-D Semiconductors. Springer US, 1993. http://dx.doi.org/10.1007/978-1-4615-2822-7_5.

Full text

APA, Harvard, Vancouver, ISO, and other styles

3

Kochereshko, V. P., G. V. Astakhov, R. A. Suris, et al. "Exciton-trion coupling in modulation doped quantum well structures." In Springer Proceedings in Physics. Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59484-7_232.

Full text

APA, Harvard, Vancouver, ISO, and other styles

4

Seilmeier, A., U. Plödereder, J. Baier, and G. Weimann. "Temperature Dependent Intersubband Dynamics in N — Modulation Doped Quantum Well Structures." In Quantum Well Intersubband Transition Physics and Devices. Springer Netherlands, 1994. http://dx.doi.org/10.1007/978-94-011-1144-7_36.

Full text

APA, Harvard, Vancouver, ISO, and other styles

5

Kochereshko, V. P., D. R. Yakovlev, G. V. Astakhov, et al. "Combined Exciton-Electron Processes in Modulation Doped Quantum Well Structures." In Optical Properties of Semiconductor Nanostructures. Springer Netherlands, 2000. http://dx.doi.org/10.1007/978-94-011-4158-1_31.

Full text

APA, Harvard, Vancouver, ISO, and other styles

6

Phillips, C. C., H. L. Vaghjiani, E. A. Johnson, et al. "Observation of Intersubband Transitions in Asymmetric δ-Doped GaAs, InSb and InAs Structures." In Quantum Well Intersubband Transition Physics and Devices. Springer Netherlands, 1994. http://dx.doi.org/10.1007/978-94-011-1144-7_30.

Full text

APA, Harvard, Vancouver, ISO, and other styles

7

Perry, C. H., J. M. Worlock, M. C. Smith, and A. Petrou. "Magneto-Luminescence in Modulation-Doped AlGaAs-GaAs Multiple Quantum Well Heterostructures." In Springer Series in Solid-State Sciences. Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-83114-0_30.

Full text

APA, Harvard, Vancouver, ISO, and other styles

8

Das, S., R. K. Nayak, T. Sahu, and A. K. Panda. "Electron mobility Enhancement in Barrier Delta Doped Asymmetric Double Quantum Well Structures." In Physics of Semiconductor Devices. Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_64.

Full text

APA, Harvard, Vancouver, ISO, and other styles

9

Gaggero-Sager, L. M., and R. Pérez-Alvarez. "Electronic structure of delta-doped quantum well as a function of temperature." In Fourth Granada Lectures in Computational Physics. Springer Berlin Heidelberg, 1997. http://dx.doi.org/10.1007/bfb0106002.

Full text

APA, Harvard, Vancouver, ISO, and other styles

10

Gaggero-Sager, L. M., and R. Pérez-Alvarez. "Electronic Structure of Delta-Doped Quantum Well as a Function of Temperature." In Fourth Granada Lectures in Computational Physics. Springer Berlin Heidelberg, 1997. http://dx.doi.org/10.1007/978-3-662-14148-9_19.

Full text

APA, Harvard, Vancouver, ISO, and other styles

Conference papers on the topic "Doped Quantum Well"

1

Tombling, C., M. M. Stallard, and J. S. Roberts. "Modulation of Excitonic Quenching in a Selectively Doped Single Quantum Well." In Quantum Wells for Optics and Opto-Electronics. Optica Publishing Group, 1989. http://dx.doi.org/10.1364/qwoe.1989.pd3.

Full text

Abstract:

Recently the characteristic optical absorption of quantum well structures under the influence of an electron (or electron-hole) plasma has attracted much attention in both modulation doped structures1,2 and optically non-linear devices3. We present here the first direct experimental evidence of room temperature excitonic recovery in a depletion mode selectively doped GaAs single quantum well. Quenching of the excitonic resonance is achieved in this type of structure when the electron Fermi level in the quantum well exceeds the energy of the nz=1 sub-band, as the states normally available for absorption are filled3. The carrier concentration in the quantum well is varied by a pn junction, effectively enabling the transition from a doped to an undoped quantum well to be observed. Mesa etched photodiodes and slab waveguide structures are considered in this work and both reveal the recovery of an excitonic peak. The modulation of absorption achieved is Δα ≈8000cm−1.

APA, Harvard, Vancouver, ISO, and other styles

2

Brennan, Kevin. "Theoretical comparison of multiquantum well, staircase, and doped quantum well avalanche photodiodes." In OSA Annual Meeting. Optica Publishing Group, 1986. http://dx.doi.org/10.1364/oam.1986.tub5.

Full text

Abstract:

A comparison of the multiquantum well, staircase, and doped quantum well avalanche photodiodes is presented based on the calculated gain and excess noise factor. The gain is determined from the electron and hole ionization probabilities per stage derived from an ensemble Monte Carlo calculation. The Monte Carlo calculation is particularly well adapted to study impact ionization in APDs since it includes the full details of the conduction and valence bonds as well as collisional broadening. Various device geometries are examined (different layer widths, dopings, and overall effective field strength) among the three different device types. In each case an optimized structure, in terms of the overall gain and excess noise factor, is presented. The results for devices made from the GalnAs/AllnAs material system indicate that the doped quantum well device gives the largest gain at the lowest excess noise factor of the three device types.

APA, Harvard, Vancouver, ISO, and other styles

3

Dutta, Niloy K., Niloy Choudhury, Guanghao Zhu, and Hong Cong. "Modulation-doped InGaAsP quantum well laser and modulator." In ITCom 2003, edited by Achyut K. Dutta, Abdul Ahad S. Awwal, Niloy K. Dutta, and Kazuo Fujiura. SPIE, 2003. http://dx.doi.org/10.1117/12.513627.

Full text

APA, Harvard, Vancouver, ISO, and other styles

4

XiaoDong, Yang, Su Shichen, Wen Xiaoxia, Mei Ting, and Guo Jin. "Reduce the efficiency droop by p-doped quantum well barriers in InGaN multiple quantum well." In Fourth Seminar on Novel Optoelectronic Detection Technology and Application, edited by Weiqi Jin and Ye Li. SPIE, 2018. http://dx.doi.org/10.1117/12.2307292.

Full text

APA, Harvard, Vancouver, ISO, and other styles

5

Coleman, J. J. "Strained layer quantum well lasers." In OSA Annual Meeting. Optica Publishing Group, 1991. http://dx.doi.org/10.1364/oam.1991.thgg1.

Full text

Abstract:

The In x Ga1- x As/GaAs strained layer system can be used to access the 0.9–1.1-µm wavelength range, including the 0.98 µm pump wavelength for Er-doped silica fiber amplifiers. We review the metallurgy and physics of strained layers, and outline the design criteria and reliability of broad area strained layer In x Ga1- x As/GaAs lasers, including high power fundamental mode cw 0.98-µm buried heterostructure laser diodes and antiguided in-phase locked arrays.

APA, Harvard, Vancouver, ISO, and other styles

6

Wang, Huolei, Yajie Li, Hongyan Yu, et al. "Quantum Well Laser Diodes with slightly-doped tunnel junction." In 2018 Fifteenth International Conference on Wireless and Optical Communications Networks (WOCN). IEEE, 2018. http://dx.doi.org/10.1109/wocn.2018.8556128.

Full text

APA, Harvard, Vancouver, ISO, and other styles

7

Masselink, W. T., J. Klem, T. Henderson, et al. "High performance In0.15Ga0.85As/Al0.15Ga0.85As quantum well modulation doped FETs." In 1985 International Electron Devices Meeting. IRE, 1985. http://dx.doi.org/10.1109/iedm.1985.191085.

Full text

APA, Harvard, Vancouver, ISO, and other styles

8

Andersson, J. Y., J. Alverbro, J. Borglind, and P. Helander. "Quantum Well Infrared Photodetector Arrays for Thermal Imaging Applications." In The European Conference on Lasers and Electro-Optics. Optica Publishing Group, 1996. http://dx.doi.org/10.1364/cleo_europe.1996.ctho1.

Full text

Abstract:

Long wavelength (8-10 µm) quantum well infrared photodetectors (QWIPs) based on intersubband transitions in n-doped AlGaAs/GaAs quantum wells (QW) are known to exhibit high detectivities D * = I 1010 -9-1010 cm Hz1/2 W1. Due to the well established GaAs material and processing technology QWIPs are viable candidates for high resolution (>128x128 pixels), low cost LWIR (8-12 µm) focal plane arrays (FPAs). Excellent wafer uniformities giving responsivity uniformities of 2-4 % across an array have been demonstrated and a temperature resolution NETD (noise equivalent temperature difference) = 20 mK is achieved . In the discussion below n-doped AlGaAs/GaAs QWIPs are assumed since, at least to date, these have been shown to provide the highest performance.

APA, Harvard, Vancouver, ISO, and other styles

9

Chang, Chung-Chih, Ming-Seng Hsu, Yueh Ouyang, and Yau-Chyr Wang. "Optical properties of the modulation doped InGaAs/InAlAs quantum well." In SPIE Photonic Devices + Applications, edited by Shizhuo Yin and Ruyan Guo. SPIE, 2009. http://dx.doi.org/10.1117/12.825660.

Full text

APA, Harvard, Vancouver, ISO, and other styles

10

Goldhahn, Rudiger, Gerhard Gobsch, J. Martyn Chamberlain, et al. "Investigation of doped multiple quantum well structures using modulation spectroscopy." In OE/LASE '94, edited by Orest J. Glembocki. SPIE, 1994. http://dx.doi.org/10.1117/12.176861.

Full text

APA, Harvard, Vancouver, ISO, and other styles

Reports on the topic "Doped Quantum Well"

1

Greenwald, Anton. Ion Doped Quantum Well Lasers. Defense Technical Information Center, 1995. http://dx.doi.org/10.21236/ada301963.

Full text

APA, Harvard, Vancouver, ISO, and other styles

2

Pandey, Lakshmi N., and Thomas F. George. Intersubband Transitions in Quantum-Well Heterostructures with Delta-Doped Barriers. Defense Technical Information Center, 1992. http://dx.doi.org/10.21236/ada252849.

Full text

APA, Harvard, Vancouver, ISO, and other styles

3

Lau, K. Y. Intrinsic, P-Doped and Modulation-Doped Quantum Well Lasers for Ultrafast Modulation and Ultrashort Pulses. Defense Technical Information Center, 1992. http://dx.doi.org/10.21236/ada251777.

Full text

APA, Harvard, Vancouver, ISO, and other styles

4

Hayduk, Michael J. Passively Mode-Locked Erbium-Doped Fiber Lasers Using Multiple Quantum Well Saturable Absorbers. Defense Technical Information Center, 1998. http://dx.doi.org/10.21236/ada342029.

Full text

APA, Harvard, Vancouver, ISO, and other styles

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!