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Relevant bibliographies by topics / Doped semiconductors. Diluted magnetic semiconductors

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Academic literature on the topic 'Doped semiconductors. Diluted magnetic semiconductors'

Author: Grafiati

Published: 4 June 2021

Last updated: 11 February 2022

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Journal articles on the topic "Doped semiconductors. Diluted magnetic semiconductors"

1

Peng, Xiangyang, and Rajeev Ahuja. "Non-transition-metal doped diluted magnetic semiconductors." Applied Physics Letters 94, no. 10 (March 9, 2009): 102504. http://dx.doi.org/10.1063/1.3095601.

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Li, Tong, Qiong Jie, Yu Zhang, Ya Xin Wang, and Xiao Chang Ni. "An Oxide-Diluted Magnetic Semiconductor: Co-Doped ZnO." Advanced Materials Research 652-654 (January 2013): 585–89. http://dx.doi.org/10.4028/www.scientific.net/amr.652-654.585.

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The discovery of ferromagnetism (FM) in wide band-gap semiconductors doped with transition metals (TM), known as diluted magnetic semiconductors (DMSs), has attracted much interest. These materials are applicable to spin-based optoelectronic devices working at room temperature (RT). Among DMSs, the system of Co-doped ZnO is considered as the most promising candidate, which was expected to robust magnetism. This paper focuses primarily on the recent progress in the experimental studies of ZnO:Co DMSs. The magnetic properties and possible mechanism of ZnO:Co DMSs prepared by different methods are summarized and reviewed.

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CHOI, HEON-JIN, HAN-KYU SEONG, and UNGKIL KIM. "DILUTED MAGNETIC SEMICONDUCTOR NANOWIRES." Nano 03, no. 01 (February 2008): 1–19. http://dx.doi.org/10.1142/s1793292008000848.

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An idea for simultaneously manipulating spin and charge in a single semiconductor medium has resulted in the development of diluted magnetic semiconductors (DMSs), which exhibits surprisingly room temperature ferromagnetic signatures despite having controversial ferromagnetic origin. However, achievement of truly room temperature ferromagnetism by carrier mediation is still the subject of intense research to develop the practical spin-based devices. Nanowires with one-dimensional nanostructure, which offers thermodynamically stable features and typically single crystalline and defect free, have a number of advantages over thin films with respect to studying ferromagnetism in DMSs. This review focuses primarily on our works on GaN -based DMS nanowires, i.e., Mn -doped GaN , Mn -doped AlGaN and Cu -doped GaN nanowires. These DMS nanowires have room temperature ferromagnetism by the local magnetic moment of doping elements that are in a divalent state and in tetrahedral coordination, thus substituting Ga in the wurtzite-type network structure of host materials. Importantly, our evidences indicate that the magnetism is originated from the ferromagnetic interaction driven by the carrier. These outcomes suggest that nanowires are ideal building blocks to address the magnetism in DMS due to their thermodynamic stability, single crystallinity, free of defects and free standing nature from substrate. Nanowires themselves are ideal building blocks for nanodevices and, thus, it would also be helpful in developing DMS-based spin devices.

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4

Xue-Chao, Liu, Zhang Hua-Wei, Zhang Tao, Chen Bo-Yuan, Chen Zhi-Zhan, Song Li-Xin, and Shi Er-Wei. "Magnetic properties of Mn-doped ZnO diluted magnetic semiconductors." Chinese Physics B 17, no. 4 (April 2008): 1371–76. http://dx.doi.org/10.1088/1674-1056/17/4/036.

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5

Mohanty, Sunita, and S. Ravi. "Magnetic properties of co-doped SnO2 diluted magnetic semiconductors." Indian Journal of Physics 84, no. 6 (June 2010): 735–39. http://dx.doi.org/10.1007/s12648-010-0080-5.

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6

Ueda, Shigenori, Shigemasa Suga, Takeshi Iwasaki, Akira Sekiyama, Shin Imada, Yuji Sattoh, and Shojino Takeyama. "Electronic Structure of Mn Doped Diluted Magnetic Semiconductors." Japanese Journal of Applied Physics 39, S1 (January 1, 2000): 468. http://dx.doi.org/10.7567/jjaps.39s1.468.

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7

Zeng, Ze-Ting, Feng-Xian Jiang, Li-Fei Ji, Hai-Yun Zheng, Guo-Wei Zhou, and Xiao-Hong Xu. "Room temperature ferromagnetism in metallic Ti1−xVxO2 thin films." RSC Advances 8, no. 55 (2018): 31382–87. http://dx.doi.org/10.1039/c8ra06343e.

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8

Banerjee, Pushan, and B. Ghosh. "A Contacting Technology to Magnetic Semiconductors." Advances in Science and Technology 52 (October 2006): 31–35. http://dx.doi.org/10.4028/www.scientific.net/ast.52.31.

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The present paper describes the contacting technology to the diluted magnetic semiconductor Cd1-xMnxTe having potential applications in optoelectronic and spintronic devices. For efficient spin injection into a spintronic material, a matching ohmic contact is the demand of the time. Since cadmium telluride has a well-known contact problem, its manganese-doped counterpart is also facing a similar difficulty. In the present case Cd1-xMnxTe was fabricated using thermally assisted interdiffusion and compound formation between repeated stacked elemental layers of manganese, cadmium and tellurium. A wet electroless deposition technique was employed to deposit manganese doped nickel phosphide as a magnetic contact onto Cd1-xMnxTe. It appeared that the contact resistivity improved compared to the case of gold contact. The details of the contacting technology and the results have been described in the text of the paper.

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9

Vazquez-Olmos, America R., Juan I. Gomez-Peralta, Roberto Y. Sato-Berru, and Ana L. Fernandez-Osorio. "Diluted magnetic semiconductors based on Mn-doped In2O3 nanoparticles." Journal of Alloys and Compounds 615 (December 2014): S522—S525. http://dx.doi.org/10.1016/j.jallcom.2014.01.085.

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10

Zhang, Yu, Tong Li, Ya Xin Wang, and Xin Wei Zhao. "Recent Progress in Developing Magnetic Properties of Mn-Doped ZnO Diluted Magnetic Semiconductors." Advanced Materials Research 535-537 (June 2012): 1252–57. http://dx.doi.org/10.4028/www.scientific.net/amr.535-537.1252.

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The discovery of ferromagnetism (FM) in wide band-gap semiconductors doped with transition metals (TM), known as DMSs, has attracted much interest. Among DMSs, the system of Mn-doped ZnO is considered as the most promising candidates. This paper focuses primarily on the recent progress in the experimental studies of ZnO:Mn DMSs.

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Dissertations / Theses on the topic "Doped semiconductors. Diluted magnetic semiconductors"

1

Gatuna, Ngigi wa. "Intrinsic vacancy chalcogenides as dilute magnetic semiconductors : theoretical investigation of transition-metal doped gallium selenide /." Thesis, Connect to this title online; UW restricted, 2007. http://hdl.handle.net/1773/10595.

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Liu, William K. "Electron spin dynamics in quantum dots, and the roles of charge transfer excited states in diluted magnetic semiconductors /." Thesis, Connect to this title online; UW restricted, 2007. http://hdl.handle.net/1773/8588.

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3

Fan, Junpeng. "Synthesis and advanced structural and magnetic characterization of mesoporous transition metal–doped sno2 powders and films." Doctoral thesis, Universitat Autònoma de Barcelona, 2017. http://hdl.handle.net/10803/457982.

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Aquesta Tesi doctoral comprèn la síntesi mitjançant nanoemmotllament (de l’anglès, nanocasting) i autoassemblatge per evaporació induïda (de l’anglès, evaporation–induced self–assembly) i la caracterització exhaustiva de pols i capes de SnO2 mesoporós dopat amb Ni i Cu. L’origen de les propietats magnètiques d’aquests materials es discuteix en detall. En primer lloc, es van sintetitzar per nanoemmotllament a partir de motlles de sílice KIT–6, pols mesoporosa ordenada de SnO2 dopada amb diferents quantitats de Ni. Es va verificar la replicació correcta del motlle de sílice mitjançant microscòpia electrònica de rastreig. No es van detectar fases extres atribuïbles a Ni o NiO en els corresponents difractogrames excepte per a la mostra amb el dopatge més alt (9 at.% Ni), per a la qual es va observar la presència de NiO com a fase secundària. Es va estudiar l’estat d’oxidació i la distribució espaial de Ni en la pols mitjançant espectroscòpia fotoelectrònica de raigs X i espectroscòpia de pèrdua d’energia d’electrons, respectivament. Les mostres dopades amb Ni presenten resposta ferromagnètica tant a temperatura ambient com a baixa temperatura, com a conseqüència de la presència d’espins no compensats a la superfície de nanopartícules de NiO i vacants d’oxigen. En segon lloc, es van sintetitzar capes primes continues i mesoporoses de SnO2 dopades amb Ni a partir de diferents relacions molars [Ni(II)]/[Sn(IV)] mitjançant un procés d’autoassemblatge sol–gel, utilitzant el copolímer tribloc P–123 com a agent director d’estructura. Una caracterització estructural profunda va evidenciar l’obtenció d’una estructura nanoporosa 3–D, de gruix comprès entre els 100 i 150 nm, i mida de porus de 10 nm. Els experiments de difracció de raigs X d’incidència rasant van posar de manifest que el Ni ocupava posicions substitucionals en la xarxa tipus rutil del SnO2, tot i que les anàlisis per dispersió d’energies de raigs X també van revelar la presència de petits clústers de NiO en les capes produïdes a partir de les relacions molars [Ni(II)]/[Sn(IV)] més elevades. Convé remarcar que les propietats magnètiques de les capes mesoporoses varien significativament en funció del percentatge de dopant. Les capes de SnO2 no dopades presenten un comportament diamagnètic, mentre que les dopades amb Ni mostren un clar senyal paramagnètic amb una petita contribució ferromagnètica. En tercer lloc, també es van estudiar les propietats magnètiques de pols mesoporosa ordenada de SnO2 dopada amb Cu, obtinguda mitjançant nanoemmotllament a partir de sílice KIT–6. Per bé que una eventual contaminació amb impureses de Fe or la presència de vacants d’oxigen podrien explicar el comportament ferromagnètic observat a temperatura ambient, el ferromagnetisme a baixa temperatura es va atribuir únicament a la naturalesa nanoestructurada de les nanopartícules antiferromagnètiques de CuO formades (espins no compensats i shape–mediated spin canting). La menor temperatura de bloqueig, situada entre 30 i 50 K, i l’existència de petits desplaçaments verticals en els cicles d’histèresi van confirmar efectes de mida en les nanopartícules de CuO
This Thesis dissertation covers the synthesis by means of nanocasting and evaporation–induced self–assembly (EISA) methods as well as the advanced characterization of Ni, Cu–doped mesoporous SnO2 powders and films. The origin of the magnetic properties in these materials is also discussed in detail. Firstly, ordered mesoporous SnO2 powders doped with different Ni amounts were synthesized by nanocasting from mesoporous KIT–6 silica. Successful replication of the silica template was verified by scanning electron microscopy. No extra phases attributed to Ni or NiO were detected in the corresponding X–ray diffractograms except for the sample with the highest doping amount (e.g., 9 at.% Ni), for which NiO as secondary phase was observed. The oxidation state and spatial distribution of Ni in the powders was investigated by X–ray photoelectron spectroscopy and electron energy loss spectroscopy, respectively. Ni–containing powders exhibit ferromagnetic response at low and room temperatures, due to uncompensated spins at the surface of NiO nanoparticles and the occurrence of oxygen vacancies. Secondly, continuous mesoporous Ni–doped SnO2 thin films were synthesized from variable [Ni(II)]/[Sn(IV)] molar ratios through a sol–gel based self–assembly process, using P–123 triblock copolymer as a structure directing agent. A deep structural characterization revealed a truly 3–D nanoporous structure with thickness in the range of 100–150 nm, and average pore size about 10 nm. Grazing incidence X–ray diffraction experiments indicated that Ni had successfully substituted Sn in the rutile–type lattice, although energy–dispersive X–ray analyses also revealed the occurrence of small NiO clusters in the films produced from high [Ni(II)]/[Sn(IV)] molar ratios. Interestingly, the magnetic properties of these mesoporous films significantly vary as a function of the doping percentage. The undoped SnO2 films exhibit a diamagnetic behaviour, whereas a clear paramagnetic signal with small ferromagnetic contribution dominates the magnetic response of the Ni–doped mesoporous films. Thirdly, the magnetic properties of ordered mesoporous Cu–doped SnO2 powders, prepared by hard–templating from KIT–6 silica, were also studied. While Fe contamination or the presence of oxygen vacancies might be a plausible explanation of the room temperature ferromagnetism, the low–temperature ferromagnetism was mainly and uniquely assigned to the nanoscale nature of the formed antiferromagnetic CuO nanoparticles (uncompensated spins and shape–mediated spin canting). The reduced blocking temperature, which resided between 30 and 5 K, and small vertical shifts in the hysteresis loops confirmed size effects in the CuO nanoparticles.

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Kaspar, Tiffany C. "Materials and magnetic studies of cobalt-doped anatase titanium dioxide and perovskite strontium titanate as potential dilute magnetic semiconductors /." Thesis, Connect to this title online; UW restricted, 2004. http://hdl.handle.net/1773/9902.

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5

Rumaiz, Abdul K. "Cobalt doped titanium dioxide, a possible candidate for dilute magnetic semiconductor." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 149 p, 2008. http://proquest.umi.com/pqdweb?did=1459915881&sid=3&Fmt=2&clientId=8331&RQT=309&VName=PQD.

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6

Yang, Zihao. "Magneto and Spin Transport in Magnetically Doped Semiconductors and Magnetic Insulators." The Ohio State University, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=osu1502963926201783.

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7

Chey, Chan Oeurn. "Synthesis of ZnO and transition metals doped ZnO nanostructures, their characterization and sensing applications." Doctoral thesis, Linköpings universitet, Fysik och elektroteknik, 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-113237.

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Nanotechnology is a technology of the design and the applications of nanoscale materials with their fundamentally new properties and functions. Nanosensor devices based on nanomaterials provide very fast response, low-cost, long-life time, easy to use for unskilled users, and provide high-efficiency. 1-D ZnO nanostructures materials have great potential applications in various sensing applications. ZnO is a wide band gap (3.37 eV at room temperature) semiconductor materials having large exciton binding energy (60 meV) and excellent chemical stability, electrical, optical, piezoelectric and pyroelectric properties. By doping the transition metals (TM) into ZnO matrix, the properties of ZnO nanostructures can be tuned and its room temperature ferromagnetic behavior can be enhanced, which provide the TM-doped ZnO nanostructures as promising candidate for optoelectronic, spintronics and high performance sensors based devices. The synthesis of ZnO and TM-doped ZnO nanostructures via the low temperature hydrothermal method is considered a promising technique due to low cost, environmental friendly, simple solution process, diverse 1-D ZnO nanostructures can be achieved, and large scale production on any type of substrate, and their properties can be controlled by the growth parameters. However, to synthesize 1-D ZnO and TM-doped ZnO nanostructures with controlled shape, structure and uniform size distribution on large area substrates with desirable properties, low cost and simple processes are of high interest and it is a big challenge at present. The main purpose of this dissertation aims to develop new techniques to synthesize 1-D ZnO and (Fe, Mn)-doped ZnO nanostructures via the hydrothermal method, to characterize and to enhance their functional properties for developing sensing devices such as biosensors for clinical diagnoses and environmental monitoring applications, piezoresistive sensors and UV photodetector. The first part of the dissertation deals with the hydrothermal synthesis of ZnO nanostructures with controlled shape, structure and uniform size distribution under different conditions and their structural characterization. The possible parameters affecting the growth which can alter the morphology, uniformity and properties of the ZnO nanostructures were investigated. Well-aligned ZnO nanorods have been fabricated for high sensitive piezoresistive sensor. The development of creatinine biosensor for clinical diagnoses purpose and the development of glucose biosensor for indirect determination of mercury ions for an inexpensive and unskilled users for environmental monitoring applications with highly sensitive, selective, stable, reproducible, interference resistant, and fast response time have been fabricated based on ZnO nanorods. The second part of the dissertation presents a new hydrothermal synthesis of (Fe, Mn)-doped-ZnO nanostructures under different preparation conditions, their properties characterization and the fabrication of piezoresistive sensors and UV photodetectors based devices were demonstrated. The solution preparation condition and growth parameters that influences on the morphology, structures and properties of the nanostructures were investigated. The fabrication of Mn-doped-ZnO NRs/PEDOT:PSS Schottky diodes used as high performance piezoresistive sensor and UV photodetector have been studied and Fe-doped ZnO NRs/FTO Schottky diode has also been fabricated for high performance of UV photodetector. Finally, a brief outlook into future challenges and relating new opportunities are presented in the last part of the dissertation.

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Haider, Muhammad Baseer. "Surface and Bulk Properties of Magnetically Doped GaN and Their Dependence on the Growth Conditions." Ohio University / OhioLINK, 2005. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1132011994.

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Ramanathan, Sivakumar. "Optical and electrical properties of compound and transition metal doped compound semiconductor nanowires." VCU Scholars Compass, 2009. http://scholarscompass.vcu.edu/etd/1667.

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Nanotechnology is the science and engineering of creating functional materials by precise control of matter at nanometer (nm) length scale and exploring novel properties at that scale. It is vital to understand the quantum mechanical phenomena manifested at nanometer scale dimensions since that will enable us to precisely engineer quantum mechanical properties to realize novel device functionalities. This dissertation investigates optical and electronic properties of compound and transition metal doped compound semiconductor nanowires with a view to exploiting them for a wide range of applications in semiconductor electronic and optical devices. In this dissertation work, basic concepts of optical and electronic properties at low dimensional structures will be discussed in chapter 1. Chapter 2 discusses the nanofabrication technique employed to fabricate highly ordered nanowires. Using this method, which is based on electrochemical self-assembly techniques, we can fabricate highly ordered and size controlled nanowires and quantum dots of different materials. In Chapter 3, we report size dependent fluorescence spectroscopy of ZnSe and Mn doped ZnSe nanowires fabricated by the above method. The nanowires exhibit blue shift in the emission spectrum due to quantum confinement effect, which increases the effective bandgap of the semiconductor. We found that the fluorescence spectrum of Mn doped ZnSe nanowires shows high luminescence efficiency, which seems to increase with increasing Mn concentration. These results are highly encouraging for applications in multi spectral displays. Chapter 4 investigates field emission results of highly ordered 50 nm tapered ZnO nanowires that were also fabricated by electrochemical self-assembly. Subsequent to fabrication, the nanowires tips are exposed by chemical etching which renders the tips conical in shape. This tapered shape concentrates the electric field lines at the tip of the wires, and that, in turn, increases the emission current density while lowering the threshold field for the onset of field emission. Measurement of the Fowler-Nordheim tunneling current carried out in partial vacuum indicates that the threshold electric field for field emission in 50-nm diameter ZnO nanowires is 15 V/µm. In this study we identified the key constraint that can increase the threshold field and reduce emission current density. In Chapter 5 we report optical and magnetic measurement of Mn-doped ZnO nanowires. Hysterisis measurements carried out at various temperatures show a ferromagnetic behavior with a Curie temperature of ~ 200 K. We also studied Mn-doping of the ZnO nanowires. The room temperature fluorescence spectroscopy of Mn-doped ZnO nanowires shows a red-shift in the spectra compared to the undoped ZnO nanowires possibly due to strain introduced by the dopants in the nanowires. Finally, in Chapter 6, we report our study of the ensemble averaged transverse spin relaxation time (T2*) in InSb thin films and nanowires using electron spin resonance (ESR) measurement. Unfortunately, the nanowires contained too few spins to produce a detectable signal in our apparatus, but the thin films contained enough spins (> 109/cm2) to produce a measurable ESR signal. We found that the T2* decreases rapidly with increasing temperature between 3.5 K and 20 K, which indicates that spin-dephasing is primarily caused by spin-phonon interactions.

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Tran, Lien. "InSb semiconductors and (In,Mn)Sb diluted magnetic semiconductors." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2011. http://dx.doi.org/10.18452/16334.

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Im Rahmen dieser Arbeit wurden InSb- und verdünnt-magnetische In_{1-x}Mn_xSb Filme mittels Gasquellen-Molekularstrahlepitaxie hergestellt und deren strukturelle und elektronische Eigenschaften untersucht. Die 2 μm InSb-Dünnschichten wurden sowohl auf GaAs(001)-Substrat als auch um 4° in Richtung [110] fehlgeschnittenem Si(001)-Substrat hergestellt. Optimierte InSb-Schichten direkt auf GaAs zeigen eine hohe kristalline Qualität, niedriges Rauschen und eine Elektronenbeweglichkeit von 41100 cm^2/Vs bei 300 K. Die Ladungsträgerkonzentration beträgt etwa 2,9e16 cm^{-3}. Um InSb-Dünnschichten guter Qualität auf Si-Substrat zu realisieren, wurden fehlgeschnittene Substrate benutzt. Zur Reduzierung der Gitterfehlanpassung wurden Pufferschichten gewachsen. Eine Elektronenmobilität von 24000 cm^2/Vs und Ladungsträgerkonzentration von 2,6e16 cm^{-3} wurden bei 300 K nachgewiesen. Diese Probe enthält ein 0,06 μm GaAs/AlSb-Supergitter als Pufferschicht (Wachstumstemperatur war 340°C). Diese Probe zeigt der höheren Dichte der Microtwins und Stapelfehler als auch den Threading-Versetzungen in der schnittstellennahen Region geschuldet. Die Deep-Level Rauschspektren zeigen die Existenz von Deep-Levels sowohl in GaAs- als auch in Si-basierten Proben. Die InSb-Filme auf Si-Substrat zeigen einen kleineren Hooge-Faktor im Vergleich zu Schichten auf GaAs (300 K). Unter Anwendung der optimierten Wachstumsbedingungen für InSb/GaAs wurden verdünnt-magnetische In_{1-x}Mn_xSb-Schichten (bis zum 1% Mangan) auf GaAs (001)-realisiert. Mn verringert die Gitterkonstante und damit den Grad der Relaxation von (In,Mn)Sb-Filmen. In den Proben befindet sich Mn in zwei magnetischen Formen, sowohl als verdünnt-magnetischer Halbleiter (In,Mn)Sb, als auch als MnSb-Cluster. Die Cluster dominieren auf der Oberfläche. Die Curie-Temperatur, Tc, unterscheidet sich für die beiden Formen. Für (In,Mn)Sb ist Tc kleiner als 50 K. Die MnSb-Cluster zeigen dagegen ein Tc über 300 K.
This dissertation describes the growth by molecular beam epitaxy and the characterization of the semiconductor InSb and the diluted magnetic semiconductor (DMS) In_{1-x}Mn_xSb. The 2 µm-thick InSb films were grown on GaAs (001) substrate and Si (001) offcut by 4° toward (110) substrate. After optimizing the growth conditions, the best InSb films grown directly on GaAs results in a high crystal quality, low noise, and an electron mobility of 41100 cm^2/V s Vs with associated electron concentration of 2.9e16 cm^{-3} at 300 K. In order to successfully grow InSb on Si, tilted substrates and the insertion of buffer layers were used. An electron mobility of 24000 cm^2/V s measured at 300 K, with an associated carrier concentration of 2.6e16 cm^{-3} is found for the best sample that was grown at 340°C with a 0.06 μm-thick GaSb/AlSb superlattice buffer layer. The sample reveals a density of microtwins and stacking faults as well as threading dislocations in the near-interface. Deep level noise spectra indicate the existence of deep levels in both GaAs and Si-based samples. The Si-based samples exhibit the lowest Hooge factor at 300 K, lower than the GaAs-based samples. Taking the optimized growth conditions of InSb/GaAs, the DMS In_{1-x}Mn_xSb/GaAs is prepared by adding Mn (x < 1%) into the InSb during growth. Mn decreases the lattice constant as well as the degree of relaxation of (In,Mn)Sb films. Mn also distributes itself to result in two different and distinct magnetic materials: the DMS (In,Mn)Sb and clusters MnSb. The MnSb clusters dominate only on the surface. For the DMS alloy (In,Mn)Sb, the measured values of Curie temperature Tc appears to be smaller than 50 K, whereas it is greater than 300 K for the MnSb clusters.

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Books on the topic "Doped semiconductors. Diluted magnetic semiconductors"

1

Diluted magnetic semiconductors. Singapore: World Scientific, 1991.

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Averous, Michel. Semimagnetic Semiconductors and Diluted Magnetic Semiconductors. Boston, MA: Springer US, 1991.

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Averous, Michel, and Minko Balkanski, eds. Semimagnetic Semiconductors and Diluted Magnetic Semiconductors. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3776-2.

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International School of Materials Science and Technology (1990 Erice, Italy). Semimagnetic semiconductors and diluted magnetic semiconductors. New York: Plenum Press, 1991.

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Jacek, Kossut, and SpringerLink (Online service), eds. Introduction to the Physics of Diluted Magnetic Semiconductors. Berlin, Heidelberg: Springer-Verlag Berlin Heidelberg, 2010.

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Gaj, Jan A., and Jacek Kossut, eds. Introduction to the Physics of Diluted Magnetic Semiconductors. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-15856-8.

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Krevet, Rasmus. FIR-laser magnetooptics on Cr-based diluted magnetic semiconductors. Göttingen: Cuvillier Verlag, 1994.

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Strutz, Thomas. High magnetic field electron spin-lattice relaxation in a diluted magnetic semiconductor: CdMnTe. Konstanz: Hartung-Gorre Verlag, 1991.

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Hausenblas, Monika. Investigation of low energy excitations in novel semiconducting systems by means of far infrared magnetospectroscopy. Konstanz: Hartung-Gorre Verlag, 1992.

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European Workshop on II-VI Compounds (3rd 1994 Linz, Austria). II-IV compounds and semimagnetic semiconductors: Joint proceedings of the Third European Workshop on II-IV Compounds, Linz, Austria, 26-28 September 1994 and the Fourth International Workshop on Semimagnetic (Diluted Magnetic) Semiconductors, Linz, Austria, 26-28 September 1994. Edited by Heinrich H, Mullin J. B, and International Workshop on Semimagnetic (Diluted Magnetic) Semiconductors (4th : 1994 : Linz, Austria). Aedermannsdorf, Switzerland: Trans Tech Publications, 1995.

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Book chapters on the topic "Doped semiconductors. Diluted magnetic semiconductors"

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Wolff, P. A. "Bound Magnetic Polarons in Diluted Magnetic Semiconductors." In Semimagnetic Semiconductors and Diluted Magnetic Semiconductors, 147–68. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3776-2_6.

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Hass, K. C. "Band Structure and Theory of Magnetic Interactions in Diluted Magnetic Semiconductors." In Semimagnetic Semiconductors and Diluted Magnetic Semiconductors, 59–82. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3776-2_3.

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Twardowski, A. "Magnetism of Fe-Based Diluted Magnetic Semiconductors." In Semimagnetic Semiconductors and Diluted Magnetic Semiconductors, 253–71. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3776-2_11.

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Averous, M. "Background on Semimagnetic Semiconductors." In Semimagnetic Semiconductors and Diluted Magnetic Semiconductors, 1–22. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3776-2_1.

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Voos, Michel. "Semimagnetic Semiconductor Superlattices." In Semimagnetic Semiconductors and Diluted Magnetic Semiconductors, 237–51. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3776-2_10.

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Triboulet, R. "Thermodynamics and Crystal Growth of Diluted Magnetic Semiconductors: “From the Atoms to the Crystals”." In Semimagnetic Semiconductors and Diluted Magnetic Semiconductors, 23–58. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3776-2_2.

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Dietl, Tomasz. "Transport Phenomena in Semimagnetic Semiconductors." In Semimagnetic Semiconductors and Diluted Magnetic Semiconductors, 83–119. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3776-2_4.

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Shapira, Y. "Experimental Studies of the d-d Exchange Interactions in Dilute Magnetic Semiconductors." In Semimagnetic Semiconductors and Diluted Magnetic Semiconductors, 121–45. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3776-2_5.

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Lascaray, J. P. "Magnetooptic Properties of Wide Gap II1-xMnxVI Semimagnetic Semiconductors." In Semimagnetic Semiconductors and Diluted Magnetic Semiconductors, 169–90. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3776-2_7.

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Benoit à la Guillaume, C. "II-Fe-VI Semimagnetic Semiconductors." In Semimagnetic Semiconductors and Diluted Magnetic Semiconductors, 191–208. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3776-2_8.

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Conference papers on the topic "Doped semiconductors. Diluted magnetic semiconductors"

1

Skipetrov, E. P., A. N. Golovanov, B. B. Kovalev, L. A. Skipetrova, A. V. Knotko, E. I. Slynko, V. E. Slynko, Giti A. Khodaparast, Michael B. Santos, and Christopher J. Stanton. "Novel IV-VI Diluted Magnetic Semiconductors Doped with Transition Metals." In 15TH INTERNATIONAL CONFERENCE ON NARROW GAP SYSTEMS (NGS15). AIP, 2011. http://dx.doi.org/10.1063/1.3671715.

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2

Zhong, M., S. Wang, Y. Li, W. Li, Y. Hu, M. Zhu, and H. Jin. "Transition metal-doped ZnO diluted magnetic semiconductors tuned by high pulsed magnetic field." In 2015 IEEE International Magnetics Conference (INTERMAG). IEEE, 2015. http://dx.doi.org/10.1109/intmag.2015.7157746.

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Zvereva, E., O. Savelieva, S. Ibragimov, E. Slyn'ko, V. Slyn'ko, Jisoon Ihm, and Hyeonsik Cheong. "Characteristic Behavior of ESR Linewidth in Cr-doped PbTe-based Diluted Magnetic Semiconductors in the Vicinity of Ferromagnetic Ordering Transition." In PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666575.

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4

Soni, Bhasker, and Somnath Biswas. "Diluted magnetic semiconductors of Zn-doped CeO2 nanoparticles synthesized by a chemical precursor method." In 2ND INTERNATIONAL CONFERENCE ON CONDENSED MATTER AND APPLIED PHYSICS (ICC 2017). Author(s), 2018. http://dx.doi.org/10.1063/1.5032602.

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Peleckis, G., X. Wang, S. Dou, and Q. Yao. "Magnetic and transport properties of transition metal ion doped diluted magnetic semiconductors In2-xTMxO3 (TM = Cr, Mn, Fe, V)." In INTERMAG 2006 - IEEE International Magnetics Conference. IEEE, 2006. http://dx.doi.org/10.1109/intmag.2006.375645.

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Ghosh, K., P. K. Kahol, S. Bhamidipati, N. Das, S. Khanra, A. Wanekaya, and R. Delong. "Structure and magnetic properties of Co-doped ZnO dilute magnetic semiconductors synthesized via hydrothermal method." In FUNCTIONAL MATERIALS: Proceedings of the International Workshop on Functional Materials (IWFM-2011). AIP, 2012. http://dx.doi.org/10.1063/1.4736875.

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Li, Xuehua, and Zhiwei Zhao. "Synthesis of Co-doped ZnO diluted magnetic semiconductors thin films by nanocluster-beam technique at different flow rate of helium gas." In 2015 IEEE International Vacuum Electronics Conference (IVEC). IEEE, 2015. http://dx.doi.org/10.1109/ivec.2015.7223976.

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Li, M. K., S. J. Lee, S. U. Yuldashev, G. Ihm, T. W. Kang, Jisoon Ihm, and Hyeonsik Cheong. "Phase Transition of Diluted Magnetic Semiconductor." In PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666578.

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Podoleanu, Adrian Gh, Radu G. Cucu, and David A. Jackson. "Magnetic field sensors utilizing diluted magnetic semiconductors." In SIOEL: Sixth Symposium of Optoelectronics, edited by Teodor Necsoiu, Maria Robu, and Dan C. Dumitras. SPIE, 2000. http://dx.doi.org/10.1117/12.378733.

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Du, Y. W., F. M. Zhang, D Wu, and S. J. Xiong. "Spin transport in Diluted Magnetic Semiconductors." In 2010 IEEE 3rd International Nanoelectronics Conference (INEC). IEEE, 2010. http://dx.doi.org/10.1109/inec.2010.5424472.

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Reports on the topic "Doped semiconductors. Diluted magnetic semiconductors"

1

Author, Not Given. (Magnetic properties of doped semiconductors). Office of Scientific and Technical Information (OSTI), January 1990. http://dx.doi.org/10.2172/6435513.

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