Journal articles: 'Doped semiconductors. Diluted magnetic semiconductors'

1

Peng, Xiangyang, and Rajeev Ahuja. "Non-transition-metal doped diluted magnetic semiconductors." Applied Physics Letters 94, no. 10 (March 9, 2009): 102504. http://dx.doi.org/10.1063/1.3095601.

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Li, Tong, Qiong Jie, Yu Zhang, Ya Xin Wang, and Xiao Chang Ni. "An Oxide-Diluted Magnetic Semiconductor: Co-Doped ZnO." Advanced Materials Research 652-654 (January 2013): 585–89. http://dx.doi.org/10.4028/www.scientific.net/amr.652-654.585.

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The discovery of ferromagnetism (FM) in wide band-gap semiconductors doped with transition metals (TM), known as diluted magnetic semiconductors (DMSs), has attracted much interest. These materials are applicable to spin-based optoelectronic devices working at room temperature (RT). Among DMSs, the system of Co-doped ZnO is considered as the most promising candidate, which was expected to robust magnetism. This paper focuses primarily on the recent progress in the experimental studies of ZnO:Co DMSs. The magnetic properties and possible mechanism of ZnO:Co DMSs prepared by different methods are summarized and reviewed.

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CHOI, HEON-JIN, HAN-KYU SEONG, and UNGKIL KIM. "DILUTED MAGNETIC SEMICONDUCTOR NANOWIRES." Nano 03, no. 01 (February 2008): 1–19. http://dx.doi.org/10.1142/s1793292008000848.

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An idea for simultaneously manipulating spin and charge in a single semiconductor medium has resulted in the development of diluted magnetic semiconductors (DMSs), which exhibits surprisingly room temperature ferromagnetic signatures despite having controversial ferromagnetic origin. However, achievement of truly room temperature ferromagnetism by carrier mediation is still the subject of intense research to develop the practical spin-based devices. Nanowires with one-dimensional nanostructure, which offers thermodynamically stable features and typically single crystalline and defect free, have a number of advantages over thin films with respect to studying ferromagnetism in DMSs. This review focuses primarily on our works on GaN -based DMS nanowires, i.e., Mn -doped GaN , Mn -doped AlGaN and Cu -doped GaN nanowires. These DMS nanowires have room temperature ferromagnetism by the local magnetic moment of doping elements that are in a divalent state and in tetrahedral coordination, thus substituting Ga in the wurtzite-type network structure of host materials. Importantly, our evidences indicate that the magnetism is originated from the ferromagnetic interaction driven by the carrier. These outcomes suggest that nanowires are ideal building blocks to address the magnetism in DMS due to their thermodynamic stability, single crystallinity, free of defects and free standing nature from substrate. Nanowires themselves are ideal building blocks for nanodevices and, thus, it would also be helpful in developing DMS-based spin devices.

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Xue-Chao, Liu, Zhang Hua-Wei, Zhang Tao, Chen Bo-Yuan, Chen Zhi-Zhan, Song Li-Xin, and Shi Er-Wei. "Magnetic properties of Mn-doped ZnO diluted magnetic semiconductors." Chinese Physics B 17, no. 4 (April 2008): 1371–76. http://dx.doi.org/10.1088/1674-1056/17/4/036.

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Mohanty, Sunita, and S. Ravi. "Magnetic properties of co-doped SnO2 diluted magnetic semiconductors." Indian Journal of Physics 84, no. 6 (June 2010): 735–39. http://dx.doi.org/10.1007/s12648-010-0080-5.

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Ueda, Shigenori, Shigemasa Suga, Takeshi Iwasaki, Akira Sekiyama, Shin Imada, Yuji Sattoh, and Shojino Takeyama. "Electronic Structure of Mn Doped Diluted Magnetic Semiconductors." Japanese Journal of Applied Physics 39, S1 (January 1, 2000): 468. http://dx.doi.org/10.7567/jjaps.39s1.468.

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Zeng, Ze-Ting, Feng-Xian Jiang, Li-Fei Ji, Hai-Yun Zheng, Guo-Wei Zhou, and Xiao-Hong Xu. "Room temperature ferromagnetism in metallic Ti1−xVxO2 thin films." RSC Advances 8, no. 55 (2018): 31382–87. http://dx.doi.org/10.1039/c8ra06343e.

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8

Banerjee, Pushan, and B. Ghosh. "A Contacting Technology to Magnetic Semiconductors." Advances in Science and Technology 52 (October 2006): 31–35. http://dx.doi.org/10.4028/www.scientific.net/ast.52.31.

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The present paper describes the contacting technology to the diluted magnetic semiconductor Cd1-xMnxTe having potential applications in optoelectronic and spintronic devices. For efficient spin injection into a spintronic material, a matching ohmic contact is the demand of the time. Since cadmium telluride has a well-known contact problem, its manganese-doped counterpart is also facing a similar difficulty. In the present case Cd1-xMnxTe was fabricated using thermally assisted interdiffusion and compound formation between repeated stacked elemental layers of manganese, cadmium and tellurium. A wet electroless deposition technique was employed to deposit manganese doped nickel phosphide as a magnetic contact onto Cd1-xMnxTe. It appeared that the contact resistivity improved compared to the case of gold contact. The details of the contacting technology and the results have been described in the text of the paper.

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Vazquez-Olmos, America R., Juan I. Gomez-Peralta, Roberto Y. Sato-Berru, and Ana L. Fernandez-Osorio. "Diluted magnetic semiconductors based on Mn-doped In2O3 nanoparticles." Journal of Alloys and Compounds 615 (December 2014): S522—S525. http://dx.doi.org/10.1016/j.jallcom.2014.01.085.

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10

Zhang, Yu, Tong Li, Ya Xin Wang, and Xin Wei Zhao. "Recent Progress in Developing Magnetic Properties of Mn-Doped ZnO Diluted Magnetic Semiconductors." Advanced Materials Research 535-537 (June 2012): 1252–57. http://dx.doi.org/10.4028/www.scientific.net/amr.535-537.1252.

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The discovery of ferromagnetism (FM) in wide band-gap semiconductors doped with transition metals (TM), known as DMSs, has attracted much interest. Among DMSs, the system of Mn-doped ZnO is considered as the most promising candidates. This paper focuses primarily on the recent progress in the experimental studies of ZnO:Mn DMSs.

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Matsumoto, Y., H. Koinuma, T. Hasegawa, I. Takeuchi, F. Tsui, and Young K. Yoo. "Combinatorial Investigation of Spintronic Materials." MRS Bulletin 28, no. 10 (October 2003): 734–39. http://dx.doi.org/10.1557/mrs2003.215.

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AbstractHigh-throughput synthesis and characterization techniques have been effective in discovering new materials and performing rapid mapping of phase diagrams. The application of the combinatorial strategy to explore doped transition-metal oxides has led to the discovery of a transparent room-temperature ferromagnetic oxide in Co-doped anatase TiO2. The discovery has triggered a wave of studies into other metal oxide systems in pursuit of diluted magnetic semiconductors. In this article, we describe recent combinatorial studies of magnetic transition-metal oxides, germanium-based magnetic semiconductors, and Heusler alloys.

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12

Ionescu, M., P. Photongkam, R. Siegele, A. Deslantes, S. Li, and D. D. Cohen. "Fabrication and Characterisation of Diluted Magnetic Semiconductors Thin Films Using Ion Beams." Materials Science Forum 706-709 (January 2012): 2869–73. http://dx.doi.org/10.4028/www.scientific.net/msf.706-709.2869.

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The intrinsic n-type (II-VI) semiconductor ZnO may become ferromagnetic at room temperature, by small additions of magnetic ions, resulting in what is called a Diluted Magnetic Semiconductors (DMS). The potential application of DMS in spintronic devices of is driving the research effort to dope magnetic elements into this semiconductors with a depth distribution as uniform as possible. The doping levels and the depth distribution of dopants are critical parameters for the magnetic properties of this material and the possible clustering of dopants can play a significant negative role in its macroscopic magnetic properties. Thin ZnO (0001) films of between 100nm and 500nm, grown on c-Al2O3 by MOCVD were implanted with Co, Eu and Co+Eu by ion irradiation at low energies. In order to improve the depth distribution of dopants, the ion implantation was carried out through a number of appropriately chosen range foils. The results show an increase in the level of dopant homogeneity throughout the entire thickness of the film, and a ferromagnetic behavior above room temperature for Zn0.96Co0.04O, Zn0.96Eu0.04O and Zn0.92Co0.04Eu0.04O.

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Kim, Nammee, S. J. Lee, and T. W. Kang. "Magnetic properties of p-doped GaMnN diluted magnetic semiconductors containing clusters." Solid State Communications 133, no. 10 (March 2005): 629–33. http://dx.doi.org/10.1016/j.ssc.2005.01.008.

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14

Abdel-Galil, A., M. R. Balboul, and A. Sharaf. "Synthesis and characterization of Mn-doped ZnO diluted magnetic semiconductors." Physica B: Condensed Matter 477 (November 2015): 20–28. http://dx.doi.org/10.1016/j.physb.2015.08.001.

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15

Liu, Yang, Yanting Yang, Jinghai Yang, Qingfeng Guan, Huilian Liu, Lili Yang, Yongjun Zhang, et al. "Intrinsic ferromagnetic properties in Cr-doped ZnO diluted magnetic semiconductors." Journal of Solid State Chemistry 184, no. 5 (May 2011): 1273–78. http://dx.doi.org/10.1016/j.jssc.2011.03.049.

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Nayak, Sanjeev K., Masako Ogura, Alfred Hucht, Stephan Buschmann, Hisazumi Akai, and Peter Entel. "Ab initiosimulations of diluted magnetic semiconductors: cobalt-doped zinc oxide." physica status solidi (a) 205, no. 8 (August 2008): 1839–46. http://dx.doi.org/10.1002/pssa.200723637.

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17

Alaria, J., H. Bieber, S. Colis, G. Schmerber, and A. Dinia. "Absence of ferromagnetism in Al-doped Zn0.9Co0.10O diluted magnetic semiconductors." Applied Physics Letters 88, no. 11 (March 13, 2006): 112503. http://dx.doi.org/10.1063/1.2186079.

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18

Ul Haq, Bakhtiar, R. Ahmed, A. Shaari, R. Hussain, and Mazmira binti Mohamad. "DFT Investigations of Ti, V Doped ZnO Based Diluted Magnetic Semiconductors." Advanced Materials Research 1107 (June 2015): 502–7. http://dx.doi.org/10.4028/www.scientific.net/amr.1107.502.

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The injection impurity element into ZnO has added new dimension to its versatile applications particularly in spintronics and optoelectronics. In this work, we are reporting effect of non magnetic Ti, and magnetic V impurities in ZnO. The substitution of impurity atoms have been done in ground state wurtzite (WZ) and meta stable zinc-blende (ZB) structure. Our investigations have revealed a small difference in WZ and ZB geometries of contaminated ZnO reflecting on the possibility of their experimental fabrication. Spin polarized electronic structures resembled nonmagnetic nature of Ti:ZnO in WZ and magnetic nature in ZB geometry. Similarly introduction of V in to ZnO induced magnetization in ZnO in both WZ and ZB geometry. For these investigations, we have adapted DFT approach using FP-L(APW+lo) method implemented in WIEN2k code.

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Ahmad, Naseem, Shakeel Khan, and Mohd Mohsin Nizam Ansari. "Optical, dielectric and magnetic properties of Mn doped SnO2 diluted magnetic semiconductors." Ceramics International 44, no. 13 (September 2018): 15972–80. http://dx.doi.org/10.1016/j.ceramint.2018.06.024.

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20

BHATT, R. N., CHENGGANG ZHOU, MALCOLM KENNETT, MONA BERCIU, and XIN WAN. "DISORDER AND FRUSTRATION IN DILUTED MAGNETIC SEMICONDUCTORS AT LOW CARRIER DENSITIES." International Journal of Modern Physics B 19, no. 01n03 (January 30, 2005): 5–7. http://dx.doi.org/10.1142/s0217979205027858.

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We examine the effects of positional disorder of the magnetic ion in III-V Diluted Magnetic Semiconductors such as ( Ga , Mn ) As at low carrier densities on the nature of the low-temperature ordered magnetic state, using numerical mean field and Monte Carlo methods. We find that positional disorder leads to a highly inhomogeneous ferromagnetic order in the low carrier density limit, with unusual thermodynamic and magnetic behavior. Spin-orbit coupling presented in the valence band leads to frustration in the hole-doped system, but does not significantly affect the low temperature magnetization.

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21

Hou, Qingyu, Chunwang Zhao, and Lingfeng Qu. "Effects of V heavy doping on the magnetic and optical properties in anatase TiO2." International Journal of Modern Physics B 31, no. 01 (January 10, 2017): 1650240. http://dx.doi.org/10.1142/s0217979216502404.

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A half-metal diluted magnetic semiconductor (DMS) can be formed in heavy V-doped TiO2. Contradictory experimental results in the literature have reported about the absorption spectra blueshift and redshift results in heavy V-doped TiO2. This study aims to reveal the mechanism of half-metal DMS in heavy V-doped TiO2 and solve the problem of absorption spectra blueshift and redshift in the doping system. In this study, models of the unit cells of pure anatase TiO2 and two V heavy-doped supercells of Ti[Formula: see text]V[Formula: see text]O2 and Ti[Formula: see text]V[Formula: see text]O2 were constructed based on density functional theory, which uses the first-principles plane-wave ultrasoft pseudopotential method. All models were obtained through geometry optimization. Local density approximation [Formula: see text] was used to calculate the band structure, density of states (DOS), orbital charge and absorption spectrum of the doping system. The calculated results under the condition of electron spin showed that in the heavy doping concentration range, the volume of supercells increases, the total energy and formation energy decrease and the stability of the supercells increases as V doping concentration increases. Furthermore, the interaction of [Formula: see text]–[Formula: see text] states is weaker than that of [Formula: see text]–[Formula: see text] states, which results in the valence band maximum shifting toward the low-energy region, and also the optical bandgap becomes narrower as well as the redshift and intensity of the absorption spectrum become more notable. Noticeably, the hybrid coupling effect of Ti-3[Formula: see text] and V-3[Formula: see text] states becomes stronger, and the magnetic moment increases. The Fermi levels of spin-up band structure within the conduction band, which form the [Formula: see text]-type degenerate semiconductors, and the Fermi levels of spin-down band structure within the bandgap indicate that the doping system has semiconductor features. Therefore, V-doped anatase TiO2 is an extremely promising DMS because of its high electron polarizability of nearly 100%. The calculation results are consistent with the experimental data; these results explain the problems reasonably and adequately. Therefore, the research findings can help solve the contradiction of the redshift and blueshift in the preparation of photocatalysts and half-metal diluted magnetic semiconductors of V heavy-doped anatase TiO2.

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22

Liu, Hongbo, Yang Liu, Lili Yang, Zhenguo Chen, Huilian Liu, Weijun Li, Jinghai Yang, and Zhiping Zhou. "Role of oxygen vacancies in V-doped ZnO diluted magnetic semiconductors." Journal of Materials Science: Materials in Electronics 26, no. 4 (January 31, 2015): 2466–70. http://dx.doi.org/10.1007/s10854-015-2707-y.

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23

Głód, P., T. Dietl, T. Wojtowicz, M. Sawicki, and I. Miotkowski. "Light-Controlled Transport in Doped Diluted Magnetic Semiconductors near Localization Boundary." Acta Physica Polonica A 84, no. 4 (October 1993): 657–60. http://dx.doi.org/10.12693/aphyspola.84.657.

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24

Hu, Fengchun, Zhiyun Pan, Tao Yao, Hiroyuki Oyanagi, Yong Jiang, Wensheng Yan, Bo He, Jian Ye, and Shiqiang Wei. "Solubility of co-doped Cu ions in Zn0.95Co0.05O diluted magnetic semiconductors." Journal of Physics D: Applied Physics 42, no. 12 (June 4, 2009): 125408. http://dx.doi.org/10.1088/0022-3727/42/12/125408.

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25

Skipetrov, E. P., N. A. Pichugin, E. I. Slyn’ko, and V. E. Slyn’ko. "Electronic structure of chromium-doped lead telluride-based diluted magnetic semiconductors." Low Temperature Physics 37, no. 3 (March 2011): 210–19. http://dx.doi.org/10.1063/1.3573664.

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26

Ramachandran, S., J. Narayan, and J. T. Prater. "Effect of oxygen annealing on Mn doped ZnO diluted magnetic semiconductors." Applied Physics Letters 88, no. 24 (June 12, 2006): 242503. http://dx.doi.org/10.1063/1.2213930.

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27

Górska, M., J. R. Anderson, G. Kido, S. M. Green, and Z. Gol/acki. "Exchange interaction in rare-earth-doped IV-VI diluted magnetic semiconductors." Physical Review B 45, no. 20 (May 15, 1992): 11702–8. http://dx.doi.org/10.1103/physrevb.45.11702.

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28

Djerdj, Igor, Georg Garnweitner, Denis Arčon, Matej Pregelj, Zvonko Jagličić, and Markus Niederberger. "Diluted magnetic semiconductors: Mn/Co-doped ZnO nanorods as case study." Journal of Materials Chemistry 18, no. 43 (2008): 5208. http://dx.doi.org/10.1039/b808361d.

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29

Alsaad, A. "Structural and Magnetic Properties of Mn-Based Diluted Magnetic Semiconductors and Alloys." Research Letters in Physics 2009 (September 1, 2009): 1–4. http://dx.doi.org/10.1155/2009/406095.

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Direct supercell approach calculations of the magnetic exchange interactions in Mn-doped ScN was carried out in the local spin density approximation by using the muffin-tin-orbital Green's function method. We found that magnetic interactions are long range interactions and affected by the randomness, band gap corrections, and carrier concentrations. Using total energy minimization approach we found that the global energy minimum of MnN is obtained for zinc-blende structure. If the compound is compressed by 6%, the energy minimum corresponds to the rock-salt structure in disagreement with the experimentally observed tetragonal distorted rock-salt structure, known as -phase. An isostructural phase transition for alloys from MnN -phase to -ScN phase was found to occur at a hydrostatic pressure of 18 GPa. We predict above room temperature for Mn concentrations of about 10% in ScN : Mn system.

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30

Toulemonde, O., and M. Gaudon. "New examination of the magnetic properties of cobalt-doped ZnO diluted magnetic semiconductors." Journal of Physics D: Applied Physics 43, no. 4 (January 12, 2010): 045001. http://dx.doi.org/10.1088/0022-3727/43/4/045001.

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31

Yu Zhou, Li Xiang, Long Xue, Cheng Xing-Wang, Wang Jing-Yun, Liu Ying, Cao Mao-Sheng, and Wang Fu-Chi. "Study of synthesis and magnetic properties of Mn-doped ZnO diluted magnetic semiconductors." Acta Physica Sinica 57, no. 7 (2008): 4539. http://dx.doi.org/10.7498/aps.57.4539.

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32

Haseman, Micah, Pooneh Saadatkia, David Winarski, Armando Hernandez, Matt Kusz, Wolfgang Anwand, Andreas Wagner, Sunil Thapa, A. M. Colosimo, and Farida A. Selim. "Observation of Negative Magnetic Hysteresis Loop in ZnO Thin Films." Journal of Spectroscopy 2018 (June 10, 2018): 1–6. http://dx.doi.org/10.1155/2018/3575917.

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We report on the observation of an unusual negative magnetic hysteresis loop in ZnO thin film codoped with cobalt and aluminum (Co-Al:ZnO), while other transition-metal-doped ZnO films, such as Cu-doped ZnO and Mn-doped ZnO, exhibit normal hysteresis loops. The unusual magnetic behavior is ascribed to the presence of double magnetic layers with different magnetic moments due to the change of structural defects across the film layers. Positron annihilation measurements confirmed the presence of unique microstructural changes in the Co-Al:ZnO film. This study shows that defects in diluted magnetic semiconductors may induce not only ferromagnetism but also novel magnetic behaviors.

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33

Gan’shina, Elena, Leonard Golik, Zoya Kun’kova, Georgy Zykov, Alexander Rukovishnikov, Marina Temiryazeva, Vladimir Lesnikov, and Yuri Markin. "Diluted Magnetic Semiconductors InFeSb Prepared by Laser Ablation: Spectroscopic and Microscopic Investigations." EPJ Web of Conferences 185 (2018): 06015. http://dx.doi.org/10.1051/epjconf/201818506015.

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We report optical and magneto-optical results as well as atomic force microscopy (AFM) and magnetic force microscopy (MFM) results for InFeSb samples prepared by laser ablation. AFM and MFM studies have revealed the presence of magnetic particles on the samples surface, whose sizes depend on the Fe content and substrate temperature. It has found that both optical and magneto-optical spectra are superposition of spectra from the doped InFeSb layers and particles on their surface.

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BHATT, R. N., and XIN WAN. "MONTE CARLO SIMULATIONS OF DOPED, DILUTED MAGNETIC SEMICONDUCTORS — A SYSTEM WITH TWO LENGTH SCALES." International Journal of Modern Physics C 10, no. 08 (December 1999): 1459–70. http://dx.doi.org/10.1142/s0129183199001248.

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We describe a Monte Carlo simulation study of the magnetic phase diagram of diluted magnetic semiconductors doped with shallow impurities in the low concentration regime. We show that because of a wide distribution of interaction strengths, the system exhibits strong quantum effects in the magnetically ordered phase. A discrete spin model, found to closely approximate the quantum system, shows long relaxation times, and the need for specialized cluster algorithms for updating spin configurations. Results for a representative system are presented.

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Wu, Meirong, Zhiqiang Wei, Wenhua Zhao, Xuan Wang, and Jinlong Jiang. "Optical and Magnetic Properties of Ni Doped ZnS Diluted Magnetic Semiconductors Synthesized by Hydrothermal Method." Journal of Nanomaterials 2017 (2017): 1–9. http://dx.doi.org/10.1155/2017/1603450.

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Diluted magnetic semiconductors Zn1-xNixS with different consistency ratio (x = 0, 0.01, 0.03, 0.05, and 0.07) were successfully synthesized by hydrothermal method using ethylenediamine as a modifier. The influence of Ni doping concentration on the microstructure, morphology, and optical and magnetic properties of undoped and Ni doped ZnS nanocrystals was characterized by X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), X-ray energy dispersive spectrometry (XEDS), ultraviolet-visible spectroscopy (UV-vis), Fourier transform infrared spectroscopy (FT-IR), photoluminescence spectra (PL), and the vibrating sample magnetometer (VSM), respectively. The experiment results show the substitution of Ni2+ on Zn2+ sites without changing the hexagonal wurtzite structure of ZnS and generate single-phase Zn1-xNixS with good crystallization. The lattice constant causes distortion and decreases with the increase of Ni2+ doped concentration. The appearance of the samples is one-dimensional well-dispersed nanorods. UV-vis spectra reveal the band gap of all Zn1-xNixS samples greater than that of bulk ZnS (3.67 eV), and blue shift phenomenon occurs. The photoluminescence spectra of undoped and doped samples possess the broad blue emission band in the range of 400–650 nm; the PL intensities of Zn1-xNixS nanorods increase with the increase of Ni content comparing to pure ZnS and reach maximum for x = 0.03. Magnetic measurements indicated that the undoped ZnS samples are superparamagnetic, whereas the doped samples exhibit ferromagnetism.

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Mamouni, N., A. El Kenz, H. Ez-Zahraouy, M. Loulidi, A. Benyoussef, and M. Bououdina. "Stabilization of ferromagnetism in (Cr, V) co-doped ZnO diluted magnetic semiconductors." Journal of Magnetism and Magnetic Materials 340 (August 2013): 86–90. http://dx.doi.org/10.1016/j.jmmm.2013.03.025.

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Shi, Tongfei, Zhenguo Xiao, Zhijun Yin, Xinhua Li, Yuqi Wang, Hongtao He, Jiannong Wang, Wenshen Yan, and Shiqiang Wei. "The role of Zn interstitials in cobalt-doped ZnO diluted magnetic semiconductors." Applied Physics Letters 96, no. 21 (May 24, 2010): 211905. http://dx.doi.org/10.1063/1.3437082.

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38

Wang, Shiwei, Weiqiang Bo, Min Zhong, Cong Liu, Ying Li, Mingyuan Zhu, Yemin Hu, and Hongmin Jin. "Effect of Cr Content on the Properties of Magnetic Field Processed Cr-Doped ZnO-Diluted Magnetic Semiconductors." Journal of Nanomaterials 2012 (2012): 1–7. http://dx.doi.org/10.1155/2012/501069.

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Cr-doped ZnO-diluted magnetic semiconductor (DMS) nanocrystals with various Cr contents were synthesized by hydrothermal method under high magnetic field. The result indicated that both the amount of Cr contents and high magnetic field significantly influenced crystal structure, morphology, and magnetic property of Cr-doped ZnO DMSs. When the Cr contents increased from 1 at% to 5 at%, the morphology of grains sequentially changed from flower-like to rod-like and then to the flake-like form. All the samples remained hexagonal wurtzite structure after Cr ions were doped into the ZnO crystal lattice. The Cr doping led to the increasing amount of defects and even enhanced the magnetic property of the matrix materials. All the Cr-doped ZnO DMSs obtained under high magnetic field exhibited obvious ferromagnetic behavior at room temperature. The results have also shown the successful substitution of the Cr3+ions for the Zn2+ions in the crystal lattice.

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Malik, Samiksha, Komal Mohite, Pranav Naik, and R. B. Tangsali. "Preparation, Characterization, Electrical and Magnetic Properties of Mn-Doped Dilute Magnetic Semiconductors." International Journal of Nanoscience 15, no. 05n06 (October 2016): 1660004. http://dx.doi.org/10.1142/s0219581x16600048.

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Nanoparticle dilute magnetic semiconductors (DMS) are becoming increasingly important due to their possible applications in spintronics, an emerging field where the conduction process in the materials is a spin-based process. Nanoparticles of Mn-doped ZnO (DMS) material with general formula Zn[Formula: see text]MnxO ([Formula: see text]) were prepared by opting single stage combustion synthesis process. The samples characterized, exhibited formation of monophasic nanoparticles of the sample with average particle size ranging between 17 nm to 23 nm. The calculations of energy bandgap made from UV absorption spectra showed variation of the bandgap from 2.18 eV to 2.32 eV. The magnetic measurements (VSM) made on the samples confirmed formation of a single diamagnetic (Zn[Formula: see text]Mn[Formula: see text]) and two namely (Zn[Formula: see text]Mn[Formula: see text]) (Zn[Formula: see text]Mn[Formula: see text]) paramagnetic samples. It is interesting to see that all the three magnetic profiles exhibit hysteresis type behavior both in diamagnetic form and paramagnetic form. The resistivity of the samples was of the order of 10[Formula: see text] Ohm-cm ([Formula: see text]-cm) at lower temperatures. Temperature-dependent resistivity curves exhibited peaking behavior for all the three samples which is very interesting. Temperature-dependent thermo-power profiles give an indication of [Formula: see text]-type semiconductor behavior with significantly deep and broad minima around 100[Formula: see text] which becomes sharper for sample with higher Mn concentration.

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Jiang, Yingjing, Wei Wang, Chengbin Jing, Chunyue Cao, and Junhao Chu. "Sol–gel synthesis, structure and magnetic properties of Mn-doped ZnO diluted magnetic semiconductors." Materials Science and Engineering: B 176, no. 16 (September 2011): 1301–6. http://dx.doi.org/10.1016/j.mseb.2011.07.007.

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41

Srinivas, K., M. Vithal, B. Sreedhar, M. Manivel Raja, and P. Venugopal Reddy. "Structural, Optical, and Magnetic Properties of Nanocrystalline Co Doped SnO2 Based Diluted Magnetic Semiconductors." Journal of Physical Chemistry C 113, no. 9 (February 9, 2009): 3543–52. http://dx.doi.org/10.1021/jp809146x.

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42

Colis, S., H. Bieber, S. Bégin-Colin, G. Schmerber, C. Leuvrey, and A. Dinia. "Magnetic properties of Co-doped ZnO diluted magnetic semiconductors prepared by low-temperature mechanosynthesis." Chemical Physics Letters 422, no. 4-6 (May 2006): 529–33. http://dx.doi.org/10.1016/j.cplett.2006.02.109.

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Li, Chun Ping, Hao Ran Ba, and Kun Jin. "Effects of Fe Doping on the Crystal Structures and Photoluminescence of ZnO Nanorods." Key Engineering Materials 636 (December 2014): 105–9. http://dx.doi.org/10.4028/www.scientific.net/kem.636.105.

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The 5% Fe-doped ZnO nanorods (Zn0.95Fe0.05O) were prepared successfully by the wet-chemical synthesis method. Structure and morphology characterization were demonstrated by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Laser power dependent photoluminescence (PL) spectra were measured to study the electronic structures of the Fe-doped ZnO-based diluted magnetic semiconductors. The contraction of lattice constant and structured green-yellow-red emissions were analyzed. Such investigations confirmed that the induced defects or impurities originating from Fe ions.

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Antonov, V. N., L. V. Bekenov, L. P. Germash, and N. A. Plotnikov. "X-Ray Magnetic Dichroism in the Cobalt-Doped Indium Tin Oxide from First Principle Calculations." Journal of Solid State Physics 2013 (November 26, 2013): 1–10. http://dx.doi.org/10.1155/2013/213594.

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The electronic structure of the Co-doped indium tin oxide (ITO) diluted magnetic semiconductors (DMSs) were investigated theoretically from first principles, using the fully relativistic Dirac linear muffin-tin orbital band structure method. The X-ray absorption spectra (XAS) and X-ray magnetic circular dichroism (XMCD) spectra at the Co L3, In M2, Sn M2, and O K edges were investigated theoretically from first principles. The origin of the XMCD spectra in these compounds was examined. The calculated results are compared with available experimental data.

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Wang, Zhen-Hua, Dian-Yu Geng, Da Li, and Zhi-Dong Zhang. "Cluster spin-glasslike behavior in nanoparticles of diluted magnetic semiconductors ZnS:Mn." Journal of Materials Research 22, no. 9 (September 2007): 2376–83. http://dx.doi.org/10.1557/jmr.2007.0317.

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Zn1−xMnxS nanoparticles with x = 0.08, 0.16, and 0.32 were synthesized by a coprecipitation reaction between nitrate and sodium sulfide at room temperature in air. The magnetic properties of the Zn1−xMnxS nanoparticles were investigated by alternating-current (ac) susceptibility and direct-current (dc) magnetization measurements. The Mn3O4 phase was observed to exist in the Zn1−xMnxS nanoparticles as x ⩾ 0.16. The actual concentrations (x) of Mn-doped ZnS nanoparticles were determined by energy-dispersive x-ray analysis (EDAX) to be 0.06, 0.11, and 0.20, respectively, corresponding to the initial concentrations x = 0.08, 0.16, and 0.32. All the nanoparticles had the cubic structure and the lattice constant of Zn1−xMnxS phase increased with increasing Mn dopant concentration. For the Zn0.68Mn0.32S nanoparticles, there was evidence for appearance of cluster spin-glasslike behavior, as indicated by two maxima around 15 and 25 K in temperature dependence of ac susceptibility. The frequency independence of the peak at higher temperature is related to the intracluster ferromagnetic (FM) interactions, and the frequency dependence of the peak at lower temperature is associated with the spin glass. All the results revealed that the concentration of Mn2+ in Mn–ZnS and the amount of Mn3O4 were crucial for the cluster spin-glass behavior, which was not found when the real concentration (x) was unequal to 0.20 in Zn1−xMnxS.

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Sheeba, R. A. J. R., R. Saravanan, and L. John Berchmans. "A Theoretical Estimation of the Charge Density Distribution in the Diluted Magnetic Semiconductors of Si_1-xM_x and Ge_1-xM_x(M = V, Mn, Co)." Materials Science Forum 699 (September 2011): 167–83. http://dx.doi.org/10.4028/www.scientific.net/msf.699.167.

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An effort has been made to understand the charge density distribution of the Si and Ge based diluted magnetic semiconductors. A theoretical analysis has been done on the variation of charge densities when the semiconductors Si and Ge are doped with the transition metal atoms of V, Mn and Co with different concentrations of x (0.02, 0.04, 0.06, 0.08, and 0.10), in Si1-xMx and Ge1-xMx. Two dimensional electron density contour maps have been plotted for all the compositions studied in this work. The theoretical mid bond densities were found out for the compounds which can be taken as the reference values for comparison of the experimental values of the same compositions.

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Ahmad, Tokeer, Sarvari Khatoon, and Ruby Phul. "A Review on Chemical Synthesis, Characterization and Optical Properties of Nanocrystalline Transition Metal Doped Dilute Magnetic Semiconductors." Solid State Phenomena 201 (May 2013): 103–29. http://dx.doi.org/10.4028/www.scientific.net/ssp.201.103.

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Nanomaterials have fascinated researchers in recent years because these materials exhibit unusual optical, magnetic and electrical properties as compared to their bulk counterparts. Incorporating impurity ions into a semiconducting host to extend its properties has been one of the most important techniques that paved the way for the modern technology based on spintronic devices. Over the past few years, oxide based dilute magnetic semiconductors (DMSs) have gained remarkable interest due to the possibility of inducing room temperature ferromagnetism. This review describes the experimental developments and optical properties of oxide based DMSs, including the recent results on ZnO, CdO and In2O3 based systems. Optical properties of transition metal (TM)-doped ZnO, CdO and In2O3 dilute magnetic semiconductor nanoparticles show red shift in energy band gaps. Such types of phenomena are attributed to sp-d exchange interactions between band electrons and localized d-electrons of the substituted transition metal ions. Table of Contents

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Du Cheng-Xu, Wang Ting, Du Ying-Yan, Jia Qian, Cui Yu-Ting, Hu Ai-Yuan, Xiong Yuan-Qiang, and Wu Zhi-Min. "Photoelectric properties of Ag and Cr co-doped LiZnP new diluted magnetic semiconductors." Acta Physica Sinica 67, no. 18 (2018): 187101. http://dx.doi.org/10.7498/aps.67.20180450.

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Shi, Tongfei, Yuqi Wang, Zhijun Yin, Yunpeng Zhang, and Shishen Yan. "Study of the OK-edge XANES of Cobalt-doped ZnO diluted magnetic semiconductors." Journal of Physics: Conference Series 193 (November 1, 2009): 012099. http://dx.doi.org/10.1088/1742-6596/193/1/012099.

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Li, Jia-Bin, and Hong-Xia Liu. "Theoretical research of diluted magnetic semiconductors: GaN monolayer doped with transition metal atoms." Superlattices and Microstructures 120 (August 2018): 382–88. http://dx.doi.org/10.1016/j.spmi.2018.06.008.

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Journal articles on the topic 'Doped semiconductors. Diluted magnetic semiconductors'

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