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Dissertations / Theses on the topic 'Doped ZnO'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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1

Qiu, Chunong. "Preparation and investigation of doped ZnO films." Thesis, McGill University, 1987. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=64065.

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2

Hamza, Taha Mohamed. "Doped ZnO nanostructures for Mid Infrared plasmonics." Thesis, Lyon, 2017. http://www.theses.fr/2017LYSEC051/document.

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L'objectif de ce travail est de réaliser des substrats pour l’effet SEIRA (surface enhanced IR absorption) pour mesurer de faibles volumes de gaz ambiants possédant une signature moléculaire de 3,3 μm à 5,1 μm en exploitant la forte amplification de champ électrique due à la résonance plasmon de surface localisés. A cette fin, nous avons démontré la modulation des résonances de plasmon de surface localisées MIR (LSPR) dans les nanocristaux de ZnO dopés (NCs) dopés à Ga ou Al ainsi que dans des nanofils (NWs) de ZnO dopés Ga (GZO) et dans des nanofils coeur/coquille de ZnO/GZO. En ce qui concer

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3

Chan, Ray Yu Wai. "Optical and electrical properties of aluminum-doped ZnO." HKBU Institutional Repository, 2015. https://repository.hkbu.edu.hk/etd_oa/174.

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In the past few years, “green technologies and touch screen technologies for portable devices has came to hot topic in consumer market. The demand for transparent conducting oxides (TCO) is increasing continuously. Therefore, the potential replacement of indium tin oxide (ITO), which is the most widely used TCO in industry, by aluminum zinc oxide (AZO) draws much attention in order to solve the problem of shortage of ITO one day due to the consisting of rare-earth element. In this work, electrical and optical properties of AZO had been characterized according to different sputtering paramet

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4

Lorite, Israel, Yogesh Kumar, Pablo Esquinazi, et al. "Photo-enhanced magnetization in Fe-doped ZnO nanowires." American Institute of Physics, 2016. https://ul.qucosa.de/id/qucosa%3A31213.

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An emerging branch of electronics, the optospintronics, would be highly boosted if the control of magnetic order by light is implemented in magnetic semiconductors’ nanostructures being compatible with the actual technology. Here, we show that the ferromagnetic magnetization of low Fe-doped ZnO nanowires prepared by carbothermal process is enhanced under illumination up to temperatures slightly below room temperature. This enhancement is related to the existence of an oxygen vacancy VO in the neighborhood of an antiferromagnetic superexchange Fe3+-Fe3+ pair. Under illumination, the VO is ioniz

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5

Hagelin, Alexander. "ZnO nanoparticles : synthesis of Ga-doped ZnO, oxygen gas sensing and quantum chemical investigation." Thesis, Linköpings universitet, Institutionen för fysik, kemi och biologi, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-64730.

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Doped ZnO nanoparticles were synthesized by three different methods – electrochemical deposition under oxidizing conditions (EDOC) , combustion method and wet chemical synthesis – for investigating the oxygen gas sensing response. Ga-doped ZnO was mostly synthesized but also In-doped ZnO was made. The samples were analyzed by XRD, SEM, EDX and TEM. Gas response curves are given alongside with Langmuir fitted curves and data for pure ZnO and Ga-doped ZnO. DFT quantum chemical investigation of cluster models ZnO nanoparticles were performed to evaluate defect effects and oxygen and nitrogen diox

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6

Chey, Chan Oeurn. "Synthesis of ZnO and transition metals doped ZnO nanostructures, their characterization and sensing applications." Doctoral thesis, Linköpings universitet, Fysik och elektroteknik, 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-113237.

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Nanotechnology is a technology of the design and the applications of nanoscale materials with their fundamentally new properties and functions. Nanosensor devices based on nanomaterials provide very fast response, low-cost, long-life time, easy to use for unskilled users, and provide high-efficiency. 1-D ZnO nanostructures materials have great potential applications in various sensing applications. ZnO is a wide band gap (3.37 eV at room temperature) semiconductor materials having large exciton binding energy (60 meV) and excellent chemical stability, electrical, optical, piezoelectric and pyr

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7

Li, Yuanjie. "Development of ZnO-based thin film transistors and phosphorus-doped ZnO and (Zn,Mg)O by pulsed laser deposition." [Gainesville, Fla.] : University of Florida, 2006. http://purl.fcla.edu/fcla/etd/UFE0013815.

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8

Behan, Anthony. "Characterisation of doped ZnO thin films for spintronic applications." Thesis, University of Sheffield, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.489367.

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Since the theoretical prediction of room temperature intrinsic ferromagnetism in doped ZnO, there has been a huge amount of research in the area. Such a property would make ZnO an excellent candidate for spintronic materials, which would potentially have many advantages over the technologies currently available. Whilst some see room temperature intrinsic ferromagnetism upon doping ZnO with small amounts of transition metals, others present evidence of ferromagnetism from extrinsic transition metal clusters or have failed to see ferromagnetism at all. This thesis investigates the properties of

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9

Dangbegnon, Julien Kouadio. "Photoluminescence study of ZnO doped with nitrogen and arsenic." Thesis, Nelson Mandela Metropolitan University, 2010. http://hdl.handle.net/10948/1216.

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In this work, the optical properties of ZnO doped with arsenic and nitrogen were studied. The ZnO samples were grown by Metalorganic Chemical Vapor Deposition (MOCVD). The solubility of nitrogen in the ZnO films, as well as its activation upon annealing, was also investigated. Hydrogen is known as a major source for passivation of the acceptors in ZnO:N. Therefore, it is crucial to dissociate the complex(es) formed by nitrogen and hydrogen and diffuse out the hydrogen in order to prevent the reformation of such complexes. High temperatures (≥ 600 C) are required for these purposes. In order to

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10

Jossen, David. "Flux growth of ZnO microcrystals and growth of doped homoepitaxial ZnO films by liquid phase epitaxy /." Sendai, 2008. http://doc.rero.ch/record/10798?ln=fr.

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11

Luo, Jian 1971. "Origin of solid-state activated sintering in BiO₂₃-doped ZnO." Thesis, Massachusetts Institute of Technology, 1999. http://hdl.handle.net/1721.1/85326.

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12

Wu, Sheng-jie, and 巫勝傑. "A Study of Annealing Effect of Zn-doped ZnO." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/60931419952738785148.

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碩士<br>國立成功大學<br>物理學系碩博士班<br>97<br>In our study, pure, 2% and 5% zinc-doped zinc oxide (ZnO:Zn) thin films were deposited on silicon substrates by RF magnetron co-sputtering method under argon. Samples were annealed under air, nitrogen and oxygen atmospheres at annealing temperature ranging from 500 to 900℃. The influence of ZnO structural crystallinity for annealing temperature and ambient were analyzed by room temperature photoluminescence (RTPL) measurement. The PL spectrum in the visible light region was used to analyze defects of samples in variation of different annealing temperature and

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13

Su, Feng-Ju, and 蘇鳳茹. "Characteristics of Mg-doped ZnO nanowires." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/24499169591822604494.

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碩士<br>國立中興大學<br>奈米科學研究所<br>102<br>Zinc oxide is a semiconductor material with widely optical applications. It has extremely large direct binding energy and exciton energy (about 60 meV) at room temperture allowance the formation of stable exciton in ZnO at room temperature and thus ZnO has significant advantages in ptoelectronic applications such as ultraviolet sensor. Seed layer is important for growing ZnO nanowires. In this study, we use two ways to prepare seed layers. Then the ZnO nanowires fabrication process were studied. High density Mg-doped ZnO nanowires arrays were fabricated via lo

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14

Hung, Chun-En, and 洪群恩. "Thermoelectric properties of Al-doped ZnO." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/24h7fu.

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碩士<br>國立中央大學<br>電機工程學系<br>106<br>In recent years, heat recovery technology has become more mature, and the potential applications of thermoelectric modules are considerable, such as manufacturing industries, or household electricity, automobile waste heat, solar power and other domestic electricity, thermoelectric materials rely on temperature difference power generation, but due to the low conversion efficiency of the thermoelectric materials in the past, the development is relatively slow. With the maturity of the micro-nano structure technology, more thermoelectric materials with better cha

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15

Chen, Chung-Wei, and 陳重維. "Characterization of Eu doped ZnO nanowires." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/mafp8n.

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碩士<br>國立中央大學<br>物理研究所<br>96<br>In this thesis,the morphology, and optical properties of theZnO nanowires grown by chemical vapor deposition (CVD) under different growth conditions were investigated with different growth condition. For ZnO nanowires grown on Si (100), the growth mode is Volmer-Weber mode (VW-mode) due to the large lattice misfit (>30%) between ZnO and substrate. In the process of growth, the furnace was heated up to 950oC by flowing Ar with a flow rate of 100 sccm. From SEM images show that the diameter of nanowires were about 100nm. The length of nanowires were about 15 m

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16

Tsai, Lin-Tzung, and 蔡林宗. "Electrical transport properties of individual ZnO and Ga-doped ZnO nanowires." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/24830067473418956839.

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碩士<br>國立交通大學<br>物理研究所<br>98<br>The electrical conduction mechanisms in nanoscale ZnO materials are an important and noticeable topic all the time. In this thesis, we have studied natively doped and Ga-doped ZnO nanowires. By measuring the temperature behavior of resistivities from 300 K down to liquid-helium temperatures and the magnetoresistances in low magnetic fields, we address the electrical conduction mechanisms in these nanowires. We performed four-probe measurements on a series of natively doped ZnO nanowires. We found that our nanowires fell very close to the metal-insulator transitio

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17

Chiang, Ping-chang, and 蔣秉昌. "Growth and Characterization of Erbium doped ZnO." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/ntza58.

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碩士<br>國立臺灣科技大學<br>電子工程系<br>94<br>Erbium doped ZnO has been prepared by vapor-phase transport process. ZnO powder, graphite powder and Er2O3 powder were mixed and positioned in a tube furnace. The tube furnace is heated at 1000°C for 1 hour. Er:ZnO were deposition on silicon wafers located near by. Erbium doped ZnO samples were analyzed using field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), Atomic Force Microscopy (AFM), Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), Secondary Ion Mass Spectroscopy (SIMS), and Photoluminescence (PL).

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18

Chen, Wei-Hao, and 陳韋豪. "Photoelectric characteristics of Mn-doped ZnO nanowires." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/61749312655110764382.

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碩士<br>國立中興大學<br>物理學系所<br>101<br>Zinc oxide is a semiconductor material with widely applications. It has extremely large direct binding energy and exciton energy (about 60 meV) at room temperture allowance the formation of stable exciton in ZnO at room temperature and thus ZnO has significant advantages in optoelectronic applications such as ultraviolet sensor. In this study, High density Mn-doped ZnO nanowires arrays were fabricated via low temperature hydrothermal at 90°C for 3 hour. The structure and magnetism of the nanowires have been examined. The results of photo-luminescent (PL) and

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19

Lin, Wei-chen, and 林威辰. "Growth and characterization of nitrogen doped ZnO." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/54299612587803582505.

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碩士<br>國立臺灣科技大學<br>電子工程系<br>102<br>Nitrogen doped ZnO thin films were prepared by reactive ion beam sputter deposition. Argon, oxygen and nitrogen were passed simultaneously through the ion source and the effect of gas flow rates on nitrogen doped ZnO were characterized. Experimental results show that nitrogen doped ZnO films deposited at 300°C with oxygen flow rate of 0.5-2.0 sccm and nitrogen flow rate of 0.5-2.0 sccm are all highly (002) oriented. Un-doped ZnO thin film shows compressive stress, while doping of nitrogen results in increase of c-axis constant and decrease of grain size. Un-do

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20

Yan-TengLin and 林琰騰. "Fabrication microstructure and properties of ZnO and Al doped ZnO thin films." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/29637446555870728844.

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碩士<br>國立成功大學<br>機械工程學系碩博士班<br>100<br>In this study, we used the sol-gel method to prepare ZnO films and Al doped ZnO films on Si substrate at room temperature. We investigated how the number of multi-layer structure, annealing temperature and annealing time affect the ZnO films, and the Al doping affects the AZO films. The material properties include micro-structure, surface morphology, bonding and luminescence behaviors of the ZnO and Al doped ZnO films. We used X-ray diffraction (XRD) to analyze crystal phase, scanning electron microscope (SEM) to analyze surface morphology, Raman spectrosco

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21

Chen, Hanhong. "Dye sensitized solar cells using ZnO nanotips and Ga doped ZnO films." 2008. http://hdl.rutgers.edu/1782.2/rucore10001600001.ETD.17125.

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22

Yi-FengLai and 賴易鋒. "Growth and Physical Properties of Nonpolar ZnO and In-doped ZnO Structures." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/9qsk84.

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博士<br>國立成功大學<br>材料科學及工程學系<br>102<br>Non-polar ZnO thin film with high crystal quality is grown on a glass substrate using one-step oblique-angle deposition. Cross-sectional transmission electron microscopy images and selected area electron diffraction patterns reveal that the film is constructed as a stack of grains from the bottom to the top with the [0002] axis gradually titled from a vertical to a horizontal orientation with respect to the substrate. In the second part, we demonstrate the viability of a coupled structure of homologous In2O3(ZnO)m with In-doped ZnO into heterojunction belts

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23

Han, Jiaping. "Sintering and electrical properties of Mn-doped and Al-doped ZnO ceramics." Master's thesis, 2001. http://hdl.handle.net/10773/24986.

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ZnO based materials have attracted much attention both in science and in technology, due to their rich properties and wide applications. The study of the sintering and electrical properties of ZnO based materials is important for their applications, such as the varistor application. The present work is concerned with the study of the sintering and electrical properties of Mn-doped and Aldoped ZnO ceramics, since these dopants play important roles in ZnO varistors. In this work, samples of undoped, Mn-doped, and Al-doped ZnO ceramics were prepared via conventional ceramic processes, and

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24

Lin, Tsang-ming, and 林倉名. "Optical characteristics of Al2O3-capped ZnO bulks and aluminum-doped ZnO thin films." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/96824769303058657766.

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碩士<br>國立臺南大學<br>材料科學系碩士班<br>98<br>There are two main areas of concerns in this thesis. One is the study of optical characteristics of bulk ZnO with different thicknesses of Al2O3 surface passivation layers. The other is the study of optical characteristics of aluminum-doped ZnO thin film. Micro-Raman spectra, photoreflectance (PR) spectra, and photoluminescence (PL) spectra are utilized in analyzing the capping layer effect on bulk ZnO substrate. The results of micro-Raman spectra show that the growth of Al2O3 surface passivation layers do not affect the crystal quality of bulk ZnO. The surfac

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25

Hu, Hung-Ming, and 胡晃銘. "Magneto-impedance of Mn-doped ZnO magnetic semiconductors." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/54094366358953275541.

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碩士<br>國立高雄師範大學<br>物理學系<br>93<br>This research is about making magnetic semiconductor material of Zn1-xMnxO by Solid-state sintering, and controlling the oxygen content in process. Diluted magnetic semiconductor（DMS）, is the material which mixes very few transitional mental atoms, and can show magnetic property in semiconductor material. To increase the proposal in usage, diluted magnetic semiconductor is combined with semiconductor property and magnetic, as well as of electron spin and electron charge. It is a new and original semiconductor material. In this research, we made different propor

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26

Huang, Pei-yi, and 黃珮怡. "Optical characteristics of arsenic-doped ZnO thin films." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/67349441087340033566.

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27

Lin, Wei-Chen, and 林韋辰. "Growth and Characterization of Antimony Doped ZnO Nanostructures." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/8737rf.

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碩士<br>中國文化大學<br>化學工程與材料工程學系奈米材料碩士班<br>103<br>In this work, pure ZnO, Sb-doped ZnO nanostructures have been synthesized by thermal CVD. The morphology of nanostructures was analyzed by field emission scanning electron microscope (FESEM). It is shown that the appearance of nanostructures is nanowires with diameter ranging between 40 and 100 nm and with lengths extending up to several microns. High resolution transmission electron microscopy (HRTEM) micrographs and selection area electron diffraction (SAD) patterns of ZnO nanowires clearly show that they are single-crystalline with a growth direc

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28

TSENG, CHIEN-YOA, and 曾建堯. "Preparation and Characterization of Ga-doped ZnO Nanostructures." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/7uuhke.

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碩士<br>逢甲大學<br>材料科學與工程學系<br>106<br>Ga-doped ZnO nanoneedle arrays have been successfully grown on the glass and silicon substrates with pre-coated ZnO seed film by a facile wet chemical method at the low reaction temperature. Field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), field emission transmission electron microscopy (TEM), energy-dispersive spectroscopy (EDS), UV-visible spectroscopy, and electronics measurement system have been used to characterize the grown Ga-doped ZnO nanostructures. The concentration of gallium nitra

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29

tsai, Wei-xiang, and 蔡緯祥. "The study of Mn-doped ZnO thin film." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/95zf34.

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碩士<br>國立臺北科技大學<br>光電工程系研究所<br>95<br>The ZnMnO thin films were grown on Si substrate by reactive magnetron sputter,and spraying pyrolysis method. X-ray diffraction measurement revealed both sample were wurtzite structure.No evident of any other secondary phases and impurities was detected. And Increasing Mn concentration caused the band-gap increased gradually. The Zn0.982Mn0.018O film were grown on Si substrate by spraying pyrolysis method ,exhibited a weak ferromagnetic characteristic with 77K.

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30

Amami, Paul Erhire. "Structure and spin dynamics in Cr Doped ZnO." Diss., 2016. http://hdl.handle.net/10500/22833.

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Polycrystalline Zn1-xCrxO (0.01 ≤ x ≤ 0.09) samples synthesized by solid state reaction technique were sintered at different temperatures following slow step sintering schedule. Structural, micro-structural, optical, magnetic properties and homogeneity were investigated using suitable characterisation techniques. Cr2O3 and CrO2 phases have been detected in the XRD patterns and Raman spectra of Zn1-xCrxO samples with x ≥ 0.05. Photoluminescence study has indicated improved optical property of the samples compared to undoped ZnO. While low percentage Cr doped samples showed diamagnetic behaviour

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31

Chen, Kuan-chao, and 陳冠超. "Synthesis and applications of Sb-doped ZnO nanowires." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/13750836320541900656.

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碩士<br>國立臺南大學<br>電機工程學系碩士班<br>100<br>In this study, ZnO:Sb was successfully synthesized, the structure of which was analyzed by SEM, EDX, XRD and PL. It was determined that the synthesized ZnO:Sb NWs’ length is about 10 um, while the Sb atomic doping concentration is 4.27 %, with the PL and XRD images showing that the material has an obvious peak from being affected by Sb. Further, by TEM, we can see that the lattice space is 2.5 Å for the internal structure. The p-type feature was obtained by the Hall, FE and gas sensors. The Hall concentration is +2.88×1012 / cm3, while the FE has a larger wo

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32

Hsu, Duo-Xi, and 許多喜. "Synthesis and application of Al doped ZnO nanowires." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/96419335712242683590.

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碩士<br>國立臺南大學<br>電機工程學系碩博士班<br>103<br>In this work, Al:ZnO nanowires were successfully synthesized on glass and PET substrates by hydrothermal method, and also analyzed by SEM, EDS, XRD, PL and TEM. The length of Al:ZnO is about 1.8 µm while the atomic doping concentration of Al is 1.5 %. In XRD and PL images, we can see the peak shifted, which were affected by Al doping. By TEM, 0.52 nm lattice spacing was observed, which shows structurally uniform single crystals with a wurtzite structure in our nanowires. We measured the electrical properties, made the gas sensor for detecting different co

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33

Su, Chih-Chuan, and 蘇志川. "Ultra-violet photoresponse of Mn doped ZnO nanowires." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/29752776375622763598.

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博士<br>國立中興大學<br>物理學系所<br>102<br>In this thesis, an enhancement of ultra-violet (UV) sensing performance of Mn doped ZnO UV sensors was presented. Two different types of sensors were developed, including single nanowires sensor and nanoforest type sensor. Different fabricating processes of ZnO nanowires such as, vapor-liquid-solid method and low temperature aqueous solution method, were compared and discussed to optimize the photoresponse of Mn doped ZnO sensors. The mechanism, that Mn doping influence to the UV photoresponse of ZnO nanowires, was also suggested. Two methods were used to fabric

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Liu, Hong-Ru, and 劉鴻儒. "Growth and characterization of coblat-doped ZnO films." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/89405998568261192887.

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碩士<br>國立中興大學<br>材料科學與工程學系所<br>103<br>In this research, the 120-nm-thick Co-doped ZnO (CZO) dilute magnetic thin films were prepared on sapphire substrates by pulsed laser deposition (PLD). During the CZO growth, the argon (Ar) or oxygen (O2) or mixed Ar/O2 gas was introduced into the deposition chamber, and various substrate temperatures (Ts) ranging from 100 to 700 C were used. The structural, electrical, optical, and magnetic properties of the CZO films have been analyzed in detail. Finally, a more suitable CZO film would be selected to grow both on the n-GaN layers of InGaN-based blue and

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35

Chung, Ming-Fang, and 鍾明芳. "Preparation and characterization of Mn doped ZnO nanoparticles." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/55635186926127668789.

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碩士<br>國立高雄應用科技大學<br>化學工程與材料工程系<br>97<br>Mn-doped ZnO nanoparticels were prepared by a low temperature route at alkaline condition using zinc acetate, cetylpyridinium chloride and manganese acetate as the precursors. Scanning electron microscopy showed the diameters of ZnO nanoparticles were around 20-30 nm. X-ray diffraction demonstrated that the products were single crystal of ZnO; however, the d-spacing was slightly higher than the theoretical values, which could be attributed to the incorporation of Mn and formation of manganese oxides, as indicated TEM electron diffraction data. The Mn-rel

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36

Chen, Yuh-Pey, and 陳玉珮. "Characteristics and Application of Doped ZnO Thin Films." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/90682328957734197794.

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碩士<br>國立臺北科技大學<br>材料及資源工程系碩士班<br>92<br>In this research, ZnO thin films are deposited by radio frequentcy magnetron sputtering system. First , we study the influences of R.F power; working pressure and argon-oxygen gas flow ratio on ZnO films. Then, we investingate the effects of Ca2+, Sr2+, and their concentrateion on the crystal structure, phase componats, microstructure, the optics transmission, optic-energy gap and electrical properties of the Ca or Sr doped ZnO thin films are characterized and discussed. The experimental results show that, when R.F. power is 175W, working press

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37

Chiu, Chien-Hua, and 邱建華. "Physical properties of Ga-doped ZnO films and the characteristics of InGaN-based LEDs using Ga-doped ZnO transparent conductive layers." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/74078151452521028290.

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碩士<br>國立中興大學<br>物理學系所<br>100<br>The physical properties of Ga-doped zinc oxide (GZO) films prepared by atomic layer deposition (ALD) and the influence of GZO on the device characteristics of an InGaN-based light emitting diode (LED) were investigated. The ALD-grown GZO films were characterized by x-ray diffractometry (XRD), field-emission scanning electron microscopy (FESEM), Hall measurements, and optical transmission spectroscopy. The best ALD-grown GZO film was found to exhibit a low resistivity of ~4.6×10-4 Ω-cm and high optical transmittance of ~95.8% at a wavelength of 450 nm when GZO fi

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38

Wang, Han-Sheng, and 王涵生. "The Studies of ZnO /Al2O3 Thin Film Growth and Properties of Mn-doped ZnO." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/53234576754562582715.

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碩士<br>國防大學理工學院<br>光電工程碩士班<br>99<br>There are two parts in this thesis. The first part, ZnO/Al2O3 thin films were deposited on Si(111) wafer and ITO glass substrates. Al2O3 thin films were made by annealing Al metal deposited film under O2 gas at temperature between 850-500 0C. Vapor Phase Transport (VPT) method was used to fabricate ZnO film in furnace. Zinc acetate dehydrate was used as basic evaporated source, the temperature of furnace temperature was controlled between 300-500 0C under 50cc/min carrying gas, which is a mixing of 20% O2 and 80% N2. The studies were to compare the differenc

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Bhebhe, Nkosiphile Andile. "Blue-laser excitation studies of ZnO thin films and rare-earth doped ZnO powders." Thesis, 2016. http://hdl.handle.net/10539/21750.

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A dissertation submitted to the Faculty of Science, University of the Witwatersrand, Johannesburg, in fulfillment of the academic requirements for the degree of Master of Science. Johannesburg, March 2016.<br>Zinc oxide (ZnO) continues to receive widespread attention due to its excellent optical and electronic properties; it demonstrates the combined characteristics of high transmittance and electrical conductivity. Despite the tremendous drive for its application in optoelectronic devices, the full nature of the point defects and defect complexes have not been characterised comprehensively. I

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Po-ChienHuang and 黃博建. "Study of thermoelectric properties of Indium doped and un-doped ZnO nanowires and nanobelts." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/39060981788301338399.

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碩士<br>國立成功大學<br>材料科學及工程學系碩博士班<br>100<br>This study is to investigate thermoelectric properties of individual ZnO nanostructures of three types, including un-doped ZnO nanowires and In doped ZnO nanobelts grown by chemical vapor deposition (CVD),and un-doped ZnO nanowires grown by hydrothermal method. To measure Seebeck coefficient, as-grown single nanowires were placed on a device constituting of a pair of micro-heaters with a designed circuit for sensing the temperature difference between two ends of the nanowires. Combining Seebeck coefficient with electrical conductivity measured by four pr

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Hung-YiChu and 朱閎逸. "Optical, magnetic and electrical properties of S-doped and dilute Mn-doped ZnO nanowires." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/af9pwy.

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Lin, Shih-Yuam, and 林士淵. "Investigation of optical and electrical properties of Al-doped ZnO/Ag/Al-doped ZnO multilayer films deposited by electron beam evaporation technique." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/06281972504508331125.

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碩士<br>國立成功大學<br>材料科學及工程學系碩博士班<br>94<br>In this paper, a ZnO:Al/Ag/ZnO:Al multilayer system for the transparent electrodes having lower electrical resistance was prepared by electron beam evaporation method. The optical and electrical performance of an Ag and ZnO:Al single layer films with nano-dimensions was investigated. The smallest thickness of the continuous single layer Ag film that could be deposited on AZO surface by electron beam evaporation is approximately 11 nm. Based on these studies, a high quality transparent electrode, having sheet resistance as low as 7.70 ohm/sq and high trans

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Huang, Jian-wei, and 黃健瑋. "Study of Neodymium Doped ZnO by Sol-Gel Method." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/87847394467618590140.

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碩士<br>國立臺灣科技大學<br>電子工程系<br>95<br>We report the growth and characterization of neodymium doped ZnO prepared by sol-gel method. As-grown and annealed sample were analyzed by field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), Raman Scattering Spectroscopy (Raman), and Photoluminescence (PL). PL study of Nd:ZnO by using a He-Cd laser at 325 nm shows bandgap emission at 377 nm and defect related luminescence. Nd:ZnO also shows luminescence of Nd3+ near 890 nm by using He-Cd laser. The infrared emission is due to the electrons transition from 4F3/2 to 4I9/2 of Nd3+. Nd:Zn

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林晟維. "The study of complex impedance on Carbon-doped ZnO." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/47878571342887541152.

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Tang, Wei-Qun, and 唐緯群. "Al doped ZnO nanorod growth by chemical vapor deposition." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/61914003790523586332.

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碩士<br>中原大學<br>物理研究所<br>100<br>In this study, AlZnO nanorods were synthesized on silicon (100) substrates with different seed layer by chemical vapor deposition (CVD) technique. The morphologies and nanostructures were characterized by field-emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD). The optical properties were analyzed by room temperature photoluminescence (PL).We successfully fabricated n-type ZnO nanorods on a p-type GaN. And also we use a simple technique to create a light-emitting device.

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Chen, Yao-Ming, and 陳耀銘. "Optical and electrical properties of Al-doped ZnO nanoparticles." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/06582113238504458091.

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碩士<br>國立彰化師範大學<br>光電科技研究所<br>100<br>This study investigates the effect of Al content on the optical, electrical and structural properties of the sol-gel AlxZn1-xO nanoparticles by x-ray diffraction, scanning electron microscopy, photoluminescence and Raman scattering measurements. The incorporation of Al into ZnO may lead to the enhanced multiple phonons scattering in the AlxZn1-xO nanoparticles, increasing the probability of nonradiative recombination. In addition, conductivity of the AlxZn1-xO-based device increases with increasing Al content to a maximum at x = 5%, and decreases with increa

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Fang, Jian-Zh, and 方建智. "Al doped ZnO films prepared by Sol-gel method." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/42098775011659675224.

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碩士<br>中原大學<br>物理研究所<br>100<br>In this study, we used the sol-gel method to prepare ZnO films and Al doped ZnO films. We investigated how the speed of spin coating, annealing temperature and annealing atmosphere affect the ZnO films, and how the Al doping affects the AZO films. In our experiments, we used scanning electron microscope (SEM) to analyze surface morphology, energy dispersive X-ray spectrometer (EDS) to measure sample composition, X-ray diffraction (XRD) to analyze crystal phase, photoluminescence (PL) to measure band gap, the van der Pauw method to measure resistivity, and UV/VIS

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Chun-JungChang and 張竣榮. "Growth and Optoelectronic Properties of Al-doped ZnO Nanowire." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/57884075298503454710.

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碩士<br>國立成功大學<br>微電子工程研究所碩博士班<br>100<br>So far, many research group has been explored many method to grow AZO nanowires such as pulsed laser deposition, thermal evaporation method and hydrothermal method, however nobody combine AZO nanowire with optoelectronic device. Therefore, the study was divided into two parts, first part will describe to us how the synthesis of AZO nanowires and explore its physical property analysis; second part will describe to us how fabricate AZO nanowire metal-semiconductor-metal (MSM) device and measure it. In first part, we successful synthesized AZO nanowires on q

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Yang, Tsung-Ying, and 楊宗穎. "Utilizing Ni-doped ZnO nanorods as an UV detector." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/19727703232415227223.

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碩士<br>國立雲林科技大學<br>電子與光電工程研究所碩士班<br>101<br>The opto-electric applications of ZnO overlap with GaN, which is extensively used of light-emitting devices. Some advantages of ZnO are better than GaN such as large exciton binding energy and obtain high-quality ZnO single crystals easily. Great potential of ZnO-based devices due to its characteristics, low cost and obtained easily. It is believed that ZnO is a great candidate for the production of green, blue ultraviolet and white light-emission diodes. The purpose of this study was to determine if the use of Ni-doped ZnO nanorods would improve the p

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Lin, Chen-yu, and 林真瑜. "Aluminum-doped ZnO Nanoparticles for Amorphous Silicon Solar Cells." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/52310968778261971683.

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碩士<br>逢甲大學<br>光電研究所<br>99<br>The Al-doped ( 0 ~ 3% ) zinc oxide (AZO) nanoparticles were prepared by a chemical colloidal process were demonstrated. The AZO monolayer closed-pack structure was formed on Eagle 2000 glass using a dip-coating process. The monolayer closed-pack structure was embedded in a AZO thin-film with various thicknesses (80 nm, 160 nm, 240 nm, 320 nm, 400 nm ) deposited by a RF sputter. A new transparent conductive oxide (TCO) was fabricated. The structural, optical, and electrical properties of TCO structure were investigated. The average transmittance and reflection haze

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