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Academic literature on the topic 'Dose électronique'
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Journal articles on the topic "Dose électronique"
Said, Myriam Ben, Mounir Ben Mustapha, Dhekra Trabelsi, Abdennaceur Hassen, and Chammam Abdeljellil. "Impact du mode d'alimentation électronique d'une lampe UV-C sur le processus de désinfection des eaux." Revue des sciences de l’eau 24, no. 3 (November 28, 2011): 241–50. http://dx.doi.org/10.7202/1006475ar.
Full textPivaut, Laurent. "Les Dictionnaires Électroniques." Lingvisticæ Investigationes. International Journal of Linguistics and Language Resources 13, no. 1 (January 1, 1989): 117–46. http://dx.doi.org/10.1075/li.13.1.05piv.
Full textKaranastasi, Eirini, Evangelos Vellios, Ian Roberts, Stuart MacFarlane, and Derek J. F. Brown. "The application of safranin-O for staining virus-vector trichodorid nematodes for electron and confocal laser scanning microscopy." Nematology 2, no. 2 (2000): 237–45. http://dx.doi.org/10.1163/156854100508980.
Full textMakhlouf Shabou, Basma. "Digital diplomatics and measurement of electronic public data qualities." Records Management Journal 25, no. 1 (March 16, 2015): 56–77. http://dx.doi.org/10.1108/rmj-01-2015-0006.
Full textVan Wesel, Maarten, and Anouk Prop. "Comparing students’ perceptions of paper-based and electronic portfolios." Canadian Journal of Learning and Technology / La revue canadienne de l’apprentissage et de la technologie 34, no. 3 (April 6, 2009). http://dx.doi.org/10.21432/t2fk5s.
Full textAeng, Elissa S. Y., Kaitlin C. McDougal, Emily M. Allegretto-Smith, and Aaron M. Tejani. "Hidden Costs of Multiple-Dose Products: Quantifying Ipratropium Inhaler Wastage in the Hospital Setting." Canadian Journal of Hospital Pharmacy 74, no. 2 (April 19, 2021). http://dx.doi.org/10.4212/cjhp.v74i2.3098.
Full textSymons, Frank Stuart. "Network Access Skills and Equity in the Workplace: Polarization in Social Policy." Canadian Journal of Communication 22, no. 2 (February 1, 1997). http://dx.doi.org/10.22230/cjc.1997v22n2a994.
Full textRoy, Caitlin, Carolyn Gray, Lisa Ruda, Ali Bell, and Jennifer Bolt. "High-Dose, Extended-Interval Gentamicin and Tobramycin for Pediatric Inpatients: A Survey of Canadian Hospital Pharmacists." Canadian Journal of Hospital Pharmacy 69, no. 5 (October 31, 2016). http://dx.doi.org/10.4212/cjhp.v69i5.1591.
Full textTamo Mamtio, Léonie, and Gilbert Tindo. "An efficient end to end verifiable voting system." Revue Africaine de la Recherche en Informatique et Mathématiques Appliquées Volume 33 - 2020 - Special... (September 13, 2021). http://dx.doi.org/10.46298/arima.6442.
Full textBuchanan, June St Clair, Michael L. Jones, and Ken Tann. "An Analysis of Media Representation of the Australian Electronic Gaming Machine Industry." Journal of Gambling Issues, no. 36 (August 2, 2017). http://dx.doi.org/10.4309/jgi.2017.36.4.
Full textDissertations / Theses on the topic "Dose électronique"
Berger, Lucie. "Utilisation d'un système d'imagerie portale électronique avec détecteur au silicium amorphe pour vérifier la dose reçue par les patients en radiothérapie." Toulouse 3, 2006. http://www.theses.fr/2006TOU30222.
Full textToday, amorphous silicon electronic portal imaging devices (aSi EPID) are currently used to check the accuracy of patient positioning. However, they are not use for dose reconstruction yet and more investigations are required to allow the use of an aSi EPID for routine dosimetric verification. The aim of this work is first to study the dosimetric characteristics of the EPID available at the Institut Curie and then, to check patient dose during treatment using these EPID. First, performance optimization of the Varian aS500 EPID system is studied. Then, a quality assurance system is set up in order to certify the image quality on a daily basis. An additional study on the dosimetric performance of the aS500 EPID is monitored to assess operational stability for dosimetry applications. Electronic portal imaging device is also a useful tool to improve IMRT quality control. The validation and the quality assurance of a portal dose image prediction system for IMRT pre-treatment quality control are performed. All dynamic IMRT fields are verified in clinical routine with the new method based on portal dosimetry. Finally, a new formalism for in vivo dosimetry using transit dose measured with EPID is developed and validated. The absolute dose measurement issue using aSi EPID is described and the midplane dose determination using in vivo dose measurements in combination with portal imaging is used with 3D-conformal-radiation therapy
Piccin, Yohan. "Durcissement par conception d'ASIC analogiques." Thesis, Bordeaux, 2014. http://www.theses.fr/2014BORD0145/document.
Full textThe purpose of this thesis work is to investigate circuit design techniques to improve the robustness to Total Ionizing Dose (TID) of analog circuits within electronic systems embedded in space probes, satellites and vehicles. Such circuits often contain bipolartransistor components which are quite sensitive to cumulated radiation dose. However highly integrated CMOS technology has been shown to exhibit better natural TDI hardening.The approach proposed here is a hardening by design using a full CMOS semiconductor technology commercially available from ST Microelectronics calledHCMOS9A. The proposed generic hardening design methods will be seen to be compatibleand applicable to other existing or future process technologies. Furthermore this approach addresses the issue of ever-increasing development cost and access to hardened technologies.The first TID hardening technique proposed is applied to a full-CMOS voltage reference. This technique does not involve p-n junctions nor any particular layout precaution but instead is based on the subtraction of two different threshold voltages which allows the cancellation of TDI effects. While the use of advanced commercial CMOS technologies for specific radiation hardened applications is becoming more common, these technologies suffer from larger inputoffs et voltage drift than their bipolar transistor counterparts, which can impact system performance. The second technique studied is that of auto-zeroing, which is an efficient method to reduce the complex offset voltage drift mechanisms of operational amplifiers due to temperature. The purpose here is to prove that this technique can also cancel input offset voltage drift due to TID.Index term : hardening, cumulated dose, CMOS technology, voltage reference,operational amplifier
Fillion, Olivier. "L'utilisation du recalage déformable d'images CT sur CBCT dans le but de générer des contours du jour et d'améliorer le cumul de dose avec image du jour." Master's thesis, Université Laval, 2016. http://hdl.handle.net/20.500.11794/27335.
Full textEmelianova, Olga. "Modeling gas-driven microstructural evolution in ODS-EUROFER steel by high dose helium and hydrogen ion implantation." Thesis, université Paris-Saclay, 2020. http://www.theses.fr/2020UPASP056.
Full textOxide dispersion strengthened (ODS) ferritic-martensitic steels are advanced high-performance structural materials for next generation nuclear and fusion facilities. An important issue for operation performance of these steels is their resistance to detrimental effects of transmutation gases, helium and hydrogen, with a particular attention to the effects from dense population of nano-size oxide particles. The objective of the thesis is a systematic investigation of fundamental trends in gas-driven microstructure development in ferritic-martensitic ODS steels in reply to variations in the accumulated gas content, gas accumulation and damage rates, and temperature, with particular attention to the role of oxide particles. The applied experimental approach involved saturation of steel samples with various amounts of helium and hydrogen atoms using ion implantation at the JANNuS-Orsay facility in well-controlled conditions. The reference material used was ODS-EUROFER steel. The microstructural changes accompanying gas accumulation were revealed using transmission electron microscopy (TEM). For the better understanding of the mechanisms of helium interaction with oxide particles, the experiments were backed up with ion implantation into a model Y₂O₃/FeCr bilayer system and with relevant analytical and numerical modeling. Microstructural investigations of ODS-EUROFER samples implanted to high He fluences reveal a persistent partitioning of introduced gas between different microstructural features. In addition to gas bubbles in the grain bulk, extensive bubble precipitation on extended defects (grain boundaries and dislocations) and precipitates (carbides and oxides) was observed. The relative abundance of bubbles associated with different microstructural features is found to be sensitive to implantation conditions and changes in uncorrelated manner with the variation of implantation parameters. Overall, the main contributions to steel volume expansion (swelling) and the He inventory were from bubbles on grain boundaries and, at lower implantation temperatures and higher fluxes, from bubbles in the grain matrix. However, the preferential He accumulation at grain boundaries does not lead to bubble coalescence and growth of huge grain boundary cavities, without causing high-temperature helium embrittlement. Oxide nanoparticles were found to be efficient centers for helium bubble nucleation, each hosting a single bubble typically noticeably larger than bubbles in other populations. However, their contributions to both swelling and He inventory were estimated to be generally relatively minor as compared to other bubble populations, implying that oxide particle provide no substantial improvement of steel radiation performance. On the contrary, the large bubbles bear the risk of accelerated bubble-to void transition in unfavorable conditions, launching uncontrolled void swelling. The viability of such effect was demonstrated in experiments on simultaneous steel implantation with He and Au ions and quantified using analytical modeling. Under sequential helium and hydrogen implantation into ODS-EUROFER steel, notable increase of hydrogen uptake was observed as compared to oxide-free steel. However, the parameters of He bubble microstructure and, hence, the overall steel radiation resistance were found to be only weakly influenced by hydrogen, in both ODS-EUROFER steel and in Y₂O₃/FeCr bilayer system. Visible hydrogen effects on bubble microstructure were minor and manifested only after the room temperature H implantation. Summing up, ODS steel is shown to be resistant to void swelling up to very high levels of accumulated helium and hydrogen. The presence of high density of nano-oxides is generally beneficial for steel radiation tolerance, but their influence is not as strong as commonly expected. Hydrogen trapping in helium bubbles doesn’t manifest any potential risks for ODS steel radiation tolerance under experimental conditions studied
Martin, Luc. "Méthodes de corrections avancées des effets de proximité en lithographie électronique à écriture directe : Application aux technologies sub-32nm." Thesis, Lyon, INSA, 2011. http://www.theses.fr/2011ISAL0003.
Full textIn electron beam lithography, a new proximity affects correction strategy has been imagined to push the resolution capabilities beyond the limitations of the standard dose modulation. In this work, the proximity affects inherent to e-beam lithography have been studied on the newest e-beam tools available at LETI. First, the limits of the standard dose modulation correction have been evaluated. The influences of each step of the lithographic process have also been analyzed from a theoretical point a view. A simulation approach was built and used to determine the impact of each of these steps on the patterned features. Then, a new writing strategy has been fully developed. It involves sub resolution features known as eRIF (electron Resolution Improvement features) which provide a finer control of the dose profile into the resist. Since the eRIF are exposed a top the nominal features, this new writing strategy is called multiple pass exposure. In this work, the position, the dose and the design of the eRIF have been studied and optimized to get the best of this new strategy. To do so, experiments were led in a clean room environment, and minimization algorithms have been developed. It has been demonstrated that the eRIF provide a significant gain compared to the standard dose modulation. Improvements have been observed even on the most critical levels of the Integrated circuits. By using the multiple pass exposure with optimized eRIF, the resolution capabilities of the e-beam tool have been reduced by 2 technological nodes. The design rules that have been determined to use the eRIF the most efficient way were finally implemented in INSCALE, the new data preparation software developed by ASELTA NANOGRAPHICS. This way, multiple pass exposure can be used in an automated mode to correct full layouts
Hanna, Rachelle. "Transport de charges et mécanismes de relaxation dans les matériaux diélectriques à usage spatial." Thesis, Toulouse, ISAE, 2012. http://www.theses.fr/2012ESAE0026.
Full textCharging behaviours of space dielectric materials, under electron beam irradiation, is of special interest for future spacecraft needs, since this mechanism could induce electrostatic discharges and consequently damages on the sensitive systems on board. In order to assess the risks of charging and discharging, this work aims at understanding the overall charge transport mechanisms and predicting the electrical behaviour of the insulator materials, especially Teflon® FEP and Kapton® HN. For an optimized prediction, the first part of our work is thus to check whether lateral conduction process can take place in the overall charge transport mechanism. Through the definition of a new experimental set-up and protocol, we have been able to discriminate between lateral and bulk conductivity and to reveal the presence of lateral conductivity that is enhanced by radiation ionization processes. We have been able to demonstrate as well that lateral intrinsic conductivity is enhanced with the increase current density and when approaching the sample surface. The second part of our work deals with the characterization of the electrical charging behaviour of Teflon® FEP under multi-energetic electron beam irradiation and the modelling of the overall bulk charge transport mechanisms. An experimental study on charge potential evolution as a function of electron spectrum, electric field, relaxation time, dose and dose rate, was performed. A numerical model has been developed to describe the effect of the different abovementioned mechanisms on the evolution of the surface potential. This model agrees correctly with the experimental phenomenology at qualitative level and therefore allows understanding the physical mechanisms steering charge transport in Teflon® and Kapton®
James, Anthony. "Développement de méthodes de caractérisation chimiques de surface en support à l’amélioration des procédés de la microélectronique avancée." Thesis, Lyon 1, 2015. http://www.theses.fr/2015LYO10097/document.
Full textThe main goal of this thesis was to develop reliable surface analysis methods to characterize various new materials used in very small size structures typical of current developments in microelectronics applications. A particular interest has been taken in combining several complementary techniques. The first study was focused on potential artifacts when characterizing insulating layers (silicon dioxide and fluorine doped silicon dioxide – FTEOS) which are used between metal layers in chips. A comprehensive study of the electron dose effects in AES was performed using complementary AES and XPS techniques. The results revealed chemical changes in the outermost surface (suboxides) that depend on the nature of the material. The second study was focused on the development of an analytical methodology to characterize the passivation layer on the etch sidewalls after two successive plasma etching processes applied onto very small size structures (300 nm lines and 200 nm trenches). This methodology was based on the use of the differential charging effect that takes place when analyzing simultaneously two materials exhibiting different electrical properties and on the complementarity of ToF-SIMS and XPS characterizations including angular resolved XPS (AR-XPS). The chemical composition of the outermost surface of the sidewall passivation layer could then be determined. The surface of that layer was found to be consisting mostly from oxygen than reacted with silicon to form silicon suboxides with various stoichiometries
Severac, Fabrice. "Jonctions ultra-minces p+/n pour MOS "ultimes étude de l'impact des défauts sur la mobilité et l'activation du bore." Phd thesis, Université Paul Sabatier - Toulouse III, 2009. http://tel.archives-ouvertes.fr/tel-00390908.
Full textDumas, Jean-Luc. "Etudes et modélisation de l'influence des petites hétérogénéités dans les faisceaux d'électrons à l'aide du concept de séparation dose primaire-dose diffusée." Toulouse 3, 1993. http://www.theses.fr/1993TOU30179.
Full textChanterault, Christophe. "Étude numérique et expérimentale des mécanismes de dégradation dans les structures de silice épaisses à faible débit de dose." Toulouse, ENSAE, 2004. http://www.theses.fr/2004ESAE0018.
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