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Journal articles on the topic 'DV/dt'

Author: Grafiati

Published: 4 June 2021

Last updated: 25 July 2025

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1

R, Mini, Manjiri Joshi, B. Hariram Satheesh, and Dinesh M.N. "Active LC Clamp dv/dt Filter for Voltage Reflection due to Long Cable in Induction Motor Drives." International Journal of Electrical and Computer Engineering (IJECE) 6, no. 4 (2016): 1456. http://dx.doi.org/10.11591/ijece.v6i4.9156.

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<p class="JESAbstract">This paper presents an active LC clamped dv/dt filter to mitigate the over voltages appearing across the motor terminals. The over voltages at motor terminal is due to voltage reflection effect of long motor cable connected between high frequency PWM inverter having high dv/dt switching waveforms and ac motor drives. The voltage reflection due to fast switching transients can be reduced by increasing the rise time and fall time of inverter output voltage pulses. The most commonly available mitigating technique is a passive dv/dt filter between inverter and cable. S

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2

R, Mini, Manjiri Joshi, B. Hariram Satheesh, and Dinesh M.N. "Active LC Clamp dv/dt Filter for Voltage Reflection due to Long Cable in Induction Motor Drives." International Journal of Electrical and Computer Engineering (IJECE) 6, no. 4 (2016): 1456. http://dx.doi.org/10.11591/ijece.v6i4.pp1456-1469.

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<p class="JESAbstract">This paper presents an active LC clamped dv/dt filter to mitigate the over voltages appearing across the motor terminals. The over voltages at motor terminal is due to voltage reflection effect of long motor cable connected between high frequency PWM inverter having high dv/dt switching waveforms and ac motor drives. The voltage reflection due to fast switching transients can be reduced by increasing the rise time and fall time of inverter output voltage pulses. The most commonly available mitigating technique is a passive dv/dt filter between inverter and cable. S

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3

Nakata, Shuhei, and Shota Tanaka. "Temperature Dependence of dV/dt Impact on the SiC-MOSFET." Materials Science Forum 963 (July 2019): 596–99. http://dx.doi.org/10.4028/www.scientific.net/msf.963.596.

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Recentlly, high speed switching circuits using SiC power device have been developed for reduction of switching loss and downsizing of electric products. The high speed switching leads to the rapid changing of the drain voltage (dV/dt) during the switching period. This paper reports the effects of the dV/dt impact on the self-turn-on and the characteristics of SiC-MOSFET, especially the temperature dependence. The results shows that the gate bias voltage to suppress the self-turn-on is negatively correlated with the temperature. And it is also found that the dV/dt impact breaks down the gate so

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4

Bu, Hanyoung, and Younghoon Cho. "GaN-based Matrix Converter Design with Output Filters for Motor Friendly Drive System." Energies 13, no. 4 (2020): 971. http://dx.doi.org/10.3390/en13040971.

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This paper introduces a gallium nitride (GaN) high electron mobility transistor (HEMT)-based matrix converter for motor friendly drive systems. A fast switching characteristic of the GaN devices causes high dv/dt. This increases the importance of noise immunity and the reduction of parasitic components in system design. In addition, the high dv/dt in motor drive systems leads to voltage spike at a motor input terminal and leakage current through a motor chassis. Accordingly, a gate drive circuit consists of devices with a high common mode transient immunity. A printed circuit board was designe

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5

Guo, Yahui, Peng Sun, Huanlin Li, Yumeng Cai, and Zhibin Zhao. "An Online Junction Temperature Monitoring Method for SiC MOSFET Based on Drain-source Voltage Change Rate During Turn-on Transient." Journal of Physics: Conference Series 2520, no. 1 (2023): 012043. http://dx.doi.org/10.1088/1742-6596/2520/1/012043.

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Abstract This paper analyzes the turn-on transient of silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET) based on the basic physical equation, and the analysis model of drain-source voltage change rate (dv ds/dt ) during turn-on transient is derived. The change rule of dv ds/dt of SiC MOSFET during turn-on transient and its temperature-dependent characteristics are studied, and the calculations generally fit the measurements well. Experimental results show that the magnitude of turn-on dv ds/dt increases with increasing temperature and exhibits good linearity. The

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6

Almpanis, Ioannis, Paul Evans, Marina Antoniou, et al. "10kV+ Rated SiC n-IGBTs: Novel Collector-Side Design Approach Breaking the Trade-Off between dV/dt and Device Efficiency." Key Engineering Materials 946 (May 25, 2023): 125–33. http://dx.doi.org/10.4028/p-21h5lt.

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10kV+ rated 4H- Silicon Carbide (SiC) Insulated Gate Bipolar Transistors (IGBTs) have the potential to become the devices of choice in future Medium Voltage (MV) and High Voltage (HV) power converters. However, one significant performance concern of SiC IGBTs is the extremely fast collector voltage rise (dV/dt) observed during inductive turn-off. Studies on the physical mechanisms of high dV/dt in 4H-SiC IGBTs revealed the importance of collector-side design in controlling the phenomenon. In this paper we propose a novel collector-side design approach, which consists of four n-type layers with

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7

Suzuki, Masayoshi. "dv/dt drive circuit method for pnpn switch withdv/dt protection." Electronics and Communications in Japan (Part II: Electronics) 70, no. 7 (1987): 72–80. http://dx.doi.org/10.1002/ecjb.4420700707.

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8

De Cogan, D., and M. Leeson. "dv/dt Dependence in metal oxide varistors." Electronics Letters 22, no. 18 (1986): 950. http://dx.doi.org/10.1049/el:19860648.

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9

Ivascu, A., M. K. Kazimierczuk, and S. Birca-Galateanu. "Class E resonant low dv/dt rectifier." IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications 39, no. 8 (1992): 604–13. http://dx.doi.org/10.1109/81.168927.

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10

Rybalka, S. B., A. A. Demidov, E. A. Kulchenkov, and A. Yu Drakin. "STUDY OF THE dV/dt CHARACTERISTICS OF THE SILICON CARBIDE SCHOTTKY DIODES." Belgorod State University Scientific bulletin Mathematics Physics 50, no. 4 (2018): 460–68. http://dx.doi.org/10.18413/2075-4639-2018-50-4-460-468.

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11

Tang, Sheng-Yi. "Study on Characteristics of Enhancement-Mode Gallium-Nitride High-Electron-Mobility Transistor for the Design of Gate Drivers." Electronics 9, no. 10 (2020): 1573. http://dx.doi.org/10.3390/electronics9101573.

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An enhancement-mode gallium-nitride high-electron-mobility transistor (E-mode GaN HEMT) operated at high frequency is highly prone to current spikes (di/dt) and voltage spikes (dv/dt) in the parasitic inductor of its circuit, resulting in damage to the power switch. To highlight the phenomena of di/dt and dv/dt, this study connected the drain, source, and gate terminals in series with inductors (LD, LS, and LG, respectively). The objective was to explore the effects of di/dt and dv/dt phenomena and operating frequency (fS) on drain-to-source voltage (Vds), drain-to-source current (Ids), and ga

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12

Zhang, Yingying. "Investigation and Improvement of Switching Characteristics of SiC Optically Controlled Transistor." Journal of Physics: Conference Series 2331, no. 1 (2022): 012006. http://dx.doi.org/10.1088/1742-6596/2331/1/012006.

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Abstract Aiming to the switching characteristics of SiC optically controlled transistor, SiC NPN optically controlled transistor was investigated through Silvaco TCAD. The results show that under 4500V bias voltage, the turn-on and turn-off dV/dt of the SiC transistor are 428.5V/ns and 23.9V/ns, respectively. And the tailing problem in the turn-off process is obvious. In order to improve the switching characteristics of SiC optically controlled transistor, the minority carrier lifetime in base layer is regional controlled. The simulation results indicate that, by using minority carrier lifetim

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13

Minami, Yutaro, and Hirotaka Koizumi. "Class DE Voltage Driven Low $dv/dt$ Rectifier." IEEE Transactions on Power Electronics 32, no. 2 (2017): 1255–67. http://dx.doi.org/10.1109/tpel.2016.2553172.

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14

Reatti, A., M. K. Kazimierczuk, and R. Redl. "Class E full-wave low dv/dt rectifier." IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications 40, no. 2 (1993): 73–85. http://dx.doi.org/10.1109/81.219821.

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15

Venkataraghavan, P., and B. Jayant Baliga. "The dV/dt capability of MOS-gated thyristors." IEEE Transactions on Power Electronics 13, no. 4 (1998): 660–66. http://dx.doi.org/10.1109/63.704134.

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16

Kim, Dongmin, Myung-Hwan Min, Tae-Pung An, and Hanju Cha. "A dv/dt Filter Design on the Voltage Reflection Theory at SiC Converter." Transactions of The Korean Institute of Electrical Engineers 73, no. 1 (2024): 69–73. http://dx.doi.org/10.5370/kiee.2024.73.1.69.

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17

Barreto, Jaison Antônio, Maria Esther Salles Nogueira, Suzana Madeira Diorio, and Samira Bührer-Sékula. "Sorologia rápida para hanseníase (teste ML Flow) em pacientes dimorfos classificados como paucibacilares pelo número de lesões cutâneas: uma ferramenta útil." Revista da Sociedade Brasileira de Medicina Tropical 41, suppl 2 (2008): 45–47. http://dx.doi.org/10.1590/s0037-86822008000700010.

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A hanseníase ainda é doença endêmica no Brasil, com cerca de 40.000 novos casos por ano. Devido à dificuldade na realização de exames laboratoriais em campo, classifica-se a forma clínica contando-se lesões, o que pode causar subdiagnóstico de casos multibacilares e falha terapêutica. Para avaliar uma nova ferramenta para diagnóstico de hanseníase multibacilar, o teste ML Flow, foi realizado em 21/77 (27,3%) pacientes com hanseníase dimorfa (6 DV e 15 DT) não tratados, com até cinco lesões de pele, avaliados de acordo com a classificação de Ridley & Jopling (R&J). O teste ML Flow foi p

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18

Moriyoshi, Yasuo, Osamu Matsumoto, Tatsuya Kuboyama, Takahiro Tsukamoto, Yoshiyuki Kinuzawa, and Hideaki Maeshima. "A Study of Ignition Method for Gas Heat Pump Engine Using Low Temperature Plasma." SAE International Journal of Advances and Current Practices in Mobility 2, no. 2 (2020): 1067–73. http://dx.doi.org/10.4271/2019-32-0622.

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<div class="section abstract"><div class="htmlview paragraph">Low temperature plasma ignition has been proposed as a new ignition technique as it has features of good wear resistance, low energy release and combustion enhancement. In the authors’ previous study, lean burn limit could be extended by low temperature plasma ignition while a voltage drop during discharge, leading to the transition to arc discharge, was found. In this study, the structure of plug and power supply’s performance with steep voltage rising with time, dV/dt, are examined to investigate the effects on combust

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19

Gerster, Christian, and Patrick Hofer. "Gate-Controlled dv/dt- and di/dt-Limitation in High Power IGBT Converters." EPE Journal 5, no. 3-4 (1996): 11–16. http://dx.doi.org/10.1080/09398368.1996.11463368.

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20

Shihong Park and T. M. Jahns. "Flexible dv/dt and di/dt control method for insulated gate power switches." IEEE Transactions on Industry Applications 39, no. 3 (2003): 657–64. http://dx.doi.org/10.1109/tia.2003.810654.

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21

Baek, Seunghoon, Dongmin Choi, Hanyoung Bu, and Younghoon Cho. "Analysis and Design of a Sine Wave Filter for GaN-Based Low-Voltage Variable Frequency Drives." Electronics 9, no. 2 (2020): 345. http://dx.doi.org/10.3390/electronics9020345.

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Gallium nitride (GaN) devices have been widely adopted to achieve high efficiency and high power density as alternative solutions to silicon devices. When the GaN power devices are used for variable frequency drive (VFD) systems, the high dv/dt pulses at the motor terminal, which induce shaft voltage and common mode current, should be carefully considered to ensure system reliability. Although the high dv/dt issues can be mitigated with a dv/dt filter method, it leads to performance degradation depending on cable length. Meanwhile, a matrix converter also becomes a next-generation power conver

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22

Silard, A. P. "The dV/dt capability of double-interdigitated (TIL) thyristors." IEEE Electron Device Letters 7, no. 9 (1986): 531–33. http://dx.doi.org/10.1109/edl.1986.26462.

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23

Kang, H., and F. Udrea. "Dynamic C GD and dV/dt in Superjunction MOSFETs." IEEE Transactions on Electron Devices 67, no. 4 (2020): 1523–29. http://dx.doi.org/10.1109/ted.2020.2974853.

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24

TANRIVERDİ, OSMAN, and DENİZ YILDIRIM. "Independent closed loop control of di/dt and dv/dt for high power IGBTs." Turkish Journal of Electrical Engineering and Computer Sciences 30, no. 3 (2022): 487–501. http://dx.doi.org/10.55730/1300-0632.3793.

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25

Asllani, Morel, Phung, and Planson. "10 kV Silicon Carbide PiN Diodes—From Design to Packaged Component Characterization." Energies 12, no. 23 (2019): 4566. http://dx.doi.org/10.3390/en12234566.

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This paper presents the design, fabrication and characterization results obtained on the last generation (third run) of SiC 10 kV PiN diodes from SuperGrid Institute. In forward bias, the 59 mm2 diodes were tested up to 100 A. These devices withstand voltages up to 12 kV on wafer (before dicing, packaging) and show a low forward voltage drop at 80 A. The influence of the temperature from 25 °C to 125 °C has been assessed and shows that resistivity modulation occurs in the whole temperature range. Leakage current at 3 kV increases with temperature, while being three orders of magnitude lower th

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26

Wang, Tongyang, Zehong Li, Yishang Zhao, et al. "A novel 3300 V trench IGBT with P-N-doped polysilicon split gate for low EMI noise." Semiconductor Science and Technology 37, no. 4 (2022): 045011. http://dx.doi.org/10.1088/1361-6641/ac5465.

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Abstract A novel 3300 V trench insulated gate bipolar transistor (IGBT) with p-n-doped polysilicon split gate (PNSG-IGBT) is proposed for low electromagnetic interference noise. The reverse-biased polysilicon PN junction is laterally depleted and charged by displacement current during the turn-off transient, which raises electrostatic potential in n-region of the polysilicon PN junction (V N) and electrostatic potential under the gate oxide (V ACC) simultaneously. By technology computer aided design simulation, during the turn-on transient, the maximum dV ACC /dt is 57.1% lower than that of th

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27

Makki, Loreine, Marc Anthony Mannah, Christophe Batard, Nicolas Ginot, and Julien Weckbrodt. "Investigating the Shielding Effect of Pulse Transformer Operation in Isolated Gate Drivers for SiC MOSFETs." Energies 14, no. 13 (2021): 3866. http://dx.doi.org/10.3390/en14133866.

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Wide-bandgap technology evolution compels the advancement of efficient pulse-width gate-driver devices. Integrated enhanced gate-driver planar transformers are a source of electromagnetic disturbances due to inter-winding capacitances, which serve as a route to common-mode(CM) currents. This paper will simulate, via ANSYS Q3D Extractor, the unforeseen parasitic effects of a pulse planar transformer integrated in a SiC MOSFET gate-driver card. Moreover, the pulse transformer will be ameliorated by adding distinctive shielding layers aiming to suppress CM noise effects and endure high dv/dt occu

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28

Kroičs, Kaspars, and Rodions Saltanovs. "INRUSH CURRENT LIMITATION BY UTILIZATION OF LINEAR MODE OF IGBT TRANSISTOR." HUMAN. ENVIRONMENT. TECHNOLOGIES. Proceedings of the Students International Scientific and Practical Conference, no. 20 (April 20, 2016): 121–28. http://dx.doi.org/10.17770/het2016.20.3544.

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Input filter is essential part of each switched mode power supply design. Important issue that must be solved in the design process is control of the high inrush current due to rapid rise of the voltage during initial connection of the power to the power supply. In the paper a single IGBT or MOSFET transistor is applied to control dv/dt in order to limit the high current spikes during initial power turn on or to limit overcurrent in microarc oxidation process. This inrush current limiting technique is beneficial because dv/dt control reduces the electromagnetic interference due to current and

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29

Birca-Galateanu, S., and A. Ivascu. "Class E low dv/dt and low di/dt rectifiers: energy transfer, comparison, compact relationships." IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications 48, no. 9 (2001): 1065–74. http://dx.doi.org/10.1109/81.948434.

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30

Shu, Lu, Junming Zhang, Fangzheng Peng, and Zhiqian Chen. "Active Current Source IGBT Gate Drive With Closed-Loop di/dt and dv/dt Control." IEEE Transactions on Power Electronics 32, no. 5 (2017): 3787–96. http://dx.doi.org/10.1109/tpel.2016.2587340.

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31

Yurkov, Sergey N., Tigran T. Mnatsakanov, Michael E. Levinshtein, Pavel A. Ivanov, Anant K. Agarwal, and John W. Palmour. "dV/dt effect in high-voltage (1.5kV) 4H–SiC thyristors." Solid-State Electronics 49, no. 12 (2005): 2011–15. http://dx.doi.org/10.1016/j.sse.2005.09.011.

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32

Sedykh, S. V., S. B. Rybalka, A. Yu Drakin, A. A. Demidov, and E. A. Kulchenkov. "Determation of dV/dt values for domestic SiC Schottky diodes." Journal of Physics: Conference Series 1410 (December 2019): 012195. http://dx.doi.org/10.1088/1742-6596/1410/1/012195.

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33

Suzuki, Masayoshi, Akio Sagawa, Naoyuki Izaki, and Hideaki Kawakami. "Driving method for pnpn switch with dv/dt protection circuit." Electronics and Communications in Japan (Part II: Electronics) 70, no. 2 (1987): 19–29. http://dx.doi.org/10.1002/ecjb.4420700203.

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34

Guo, Min, Lixin Wang, Shixin Wang, Yuan Zhao, and Bowang Li. "A New Design Technique for a High-Speed and High dV/dt Immunity Floating-Voltage Level Shifter." Electronics 12, no. 23 (2023): 4841. http://dx.doi.org/10.3390/electronics12234841.

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This paper presents a high-speed level shifter with about 500 V/ns power supply slew immunity. In this designed structure, a narrow pulse-controlled current source is adapted to accelerate the voltage conversion and reduce the power consumption. A Fast-Slewing Circuit speeds up the operation of the level shifter based on the current comparison principle. Edge detection technology is used to filter the generated voltage noise and achieve high dV/dt immunity. The proposed level shifter simulated with the 0.18 μm BCD (bipolar-CMOS-DMOS) process shows fast responses with a typical delay of 1.49 ns

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35

Clark, E. B., N. Hu, J. L. Dummett, G. K. Vandekieft, C. Olson, and R. Tomanek. "Ventricular function and morphology in chick embryo from stages 18 to 29." American Journal of Physiology-Heart and Circulatory Physiology 250, no. 3 (1986): H407—H413. http://dx.doi.org/10.1152/ajpheart.1986.250.3.h407.

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We evaluated wet and dry ventricular and embryo weights, hemodynamic parameters of ventricular function, and myocardial myocyte organelle composition in the developing chick embryo. Phasic and dP/dt ventricular pressure were measured with a servo null pressure system, and phasic, mean, and dV/dt dorsal aortic velocities were measured with a 20-MHz pulsed-Doppler meter. Ventricular and embryo weight increased geometrically with development, but at different rates, so that the ventricle-to-embryo weight ratio decreased from 0.02 to 0.001 just prior to hatching. Ventricular systolic and end-diast

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36

Iwaizumi, Hiroki, Yusuke Fujiwara, Yuya Fukuzumi, and Yutaka Moritomo. "The effect of 3d-electron configuration entropy on the temperature coefficient of redox potential in Co1−zMnz Prussian blue analogues." Dalton Transactions 48, no. 6 (2019): 1964–68. http://dx.doi.org/10.1039/c8dt04338h.

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Recently, it was reported that a thermocell can convert temperature into electrical energy by using the difference in the thermal coefficient (α ≡ dV/dT) of the redox potential (V) between the cathode and anode materials.

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37

Patterson, Burton R., and Robert T. DeHoff. "Linear Relationship Between dV/dt and Grain Volume During Grain Growth." Metallurgical and Materials Transactions A 52, no. 9 (2021): 3849–59. http://dx.doi.org/10.1007/s11661-021-06346-x.

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38

Ramamurthy, A., S. Sawant, and B. J. Baliga. "Modeling the [dV/dt] of the IGBT during inductive turn off." IEEE Transactions on Power Electronics 14, no. 4 (1999): 601–6. http://dx.doi.org/10.1109/63.774195.

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39

Luo, Peng, Sankara Narayanan Ekkanath Madathil, Shin-Ichi Nishizawa, and Wataru Saito. "Turn-OFF dV/dt Controllability in 1.2-kV MOS-Bipolar Devices." IEEE Transactions on Power Electronics 36, no. 3 (2021): 3304–11. http://dx.doi.org/10.1109/tpel.2020.3014560.

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40

Kim, Heonyoung, Anup Anurag, Sayan Acharya, and Subhashish Bhattacharya. "Analytical Study of SiC MOSFET Based Inverter Output dv/dt Mitigation and Loss Comparison With a Passive dv/dt Filter for High Frequency Motor Drive Applications." IEEE Access 9 (2021): 15228–38. http://dx.doi.org/10.1109/access.2021.3053198.

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41

Huang, Jun, Haimeng Huang, Xinjiang Lyu, and Xing Bi Chen. "Simulation Study of a Low Switching Loss FD-IGBT With High $dI/dt$ and $dV/dt$ Controllability." IEEE Transactions on Electron Devices 65, no. 12 (2018): 5545–48. http://dx.doi.org/10.1109/ted.2018.2873598.

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42

Shantala and L. Sudheer M. "Radiated Emission Due to Common Mode Current in Smps." International Journal of Engineering and Advanced Technology (IJEAT) 9, no. 4 (2020): 304–8. https://doi.org/10.35940/ijeat.C6433.049420.

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The high frequency switching of semiconductor switches in Switched Mode Power Supplies (SMPS) cause high dV/dt and dI/dt resulting in differential mode (DM) and common mode (CM) conducted and radiated Electromagnetic Interference (EMI). The CM noise current circulating through the ground path is the major contributor for radiated EMI in the frequency range of 30 MHz to 1 GHz which will usually be above the stipulated international standards and are addressed here. The high dV/dt and dI/dt are major sources of EMI producing noise currents which will get coupled to ground through parasitic capac

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43

Idir, Nadir, Robert Bausiere, and Jean Jacques Franchaud. "Active gate voltage control of turn-on di/dt and turn-off dv/dt in insulated gate transistors." IEEE Transactions on Power Electronics 21, no. 4 (2006): 849–55. http://dx.doi.org/10.1109/tpel.2007.876895.

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44

Choi, Hye-Won, Yun-Jae Bae, Yong-Jin Kang, Cheol-Hyun Park, and Kyo-Beum Lee. "Design of dv/dt Filter for Insulation Protection in SiC Inverter-Fed Motor Drive Systems." Transactions of The Korean Institute of Electrical Engineers 73, no. 1 (2024): 56–62. http://dx.doi.org/10.5370/kiee.2024.73.1.56.

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45

Bryant, A., Shaoyong Yang, P. Mawby, et al. "Investigation Into IGBT dV/dt During Turn-Off and Its Temperature Dependence." IEEE Transactions on Power Electronics 26, no. 10 (2011): 3019–31. http://dx.doi.org/10.1109/tpel.2011.2125803.

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46

Kkelis, George, David C. Yates, and Paul D. Mitcheson. "Class-E Half-Wave Zero dv/dt Rectifiers for Inductive Power Transfer." IEEE Transactions on Power Electronics 32, no. 11 (2017): 8322–37. http://dx.doi.org/10.1109/tpel.2016.2641260.

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47

Roubertou, S., R. Ehlinger, and J. P. Chante. "Study on dv/dt Susceptibility of a MCT Under Low Control Voltage." EPE Journal 8, no. 3-4 (1999): 11–13. http://dx.doi.org/10.1080/09398368.1998.11463428.

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48

Zhao, Yong-Rui, Xin-Quan Lai, Han-Xiao Du, and Cong Liu. "dv/dt Noise canceling circuit in ultra-high-voltage MOS gate drivers." Analog Integrated Circuits and Signal Processing 77, no. 2 (2013): 271–76. http://dx.doi.org/10.1007/s10470-013-0155-2.

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49

Okutsu, Yuya, Akihiro Yamada, Sotatsu Tonomura, Ryan J. Vaden та Jianguo G. Gu. "Electrophysiological properties of maxillary trigeminal Aβ-afferent neurons of rats". Molecular Pain 17 (січень 2021): 174480692110212. http://dx.doi.org/10.1177/17448069211021271.

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Aβ-afferents in maxillary or V2 trigeminal ganglion (TG) neurons are somatosensory neurons that may be involved in both non-nociceptive and nociceptive functions in orofacial regions. However, electrophysiological properties of these V2 trigeminal Aβ-afferent neurons have not been well characterized so far. Here, we used rat ex vivo trigeminal nerve preparations and applied patch-clamp recordings to large-sized V2 TG neurons to characterize their electrophysiological properties. All the cells recorded had afferent conduction velocities in the range of Aβ-afferent conduction speeds. However, th

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Zeng, Zhiheng, Ming Chen, Xiaoming Wang, et al. "Modeling and Optimization for Konjac Vacuum Drying Based on Response Surface Methodology (RSM) and Artificial Neural Network (ANN)." Processes 8, no. 11 (2020): 1430. http://dx.doi.org/10.3390/pr8111430.

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Abstract:

To reveal quality change rules and establish the predicting model of konjac vacuum drying, a response surface methodology was adopted to optimize and analyze the vacuum drying process, while an artificial neural network (ANN) was applied to model the drying process and compare with the response surface methodology (RSM) model. The different material thickness (MT) of konjac samples (2, 4 and 6mm) were dehydrated at temperatures (DT) of 50, 60 and 70 °C with vacuum degrees (DV) of 0.04, 0.05 and 0.06 MPa, followed by Box–Behnken design. Dehydrated samples were analyzed for drying time (t), konj

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