Academic literature on the topic 'Effet Rashba'
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Journal articles on the topic "Effet Rashba"
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Guo, Junhong, Jinlei Zhang, Yunsong Di, and Zhixing Gan. "Research Progress on Rashba Effect in Two-Dimensional Organic–Inorganic Hybrid Lead Halide Perovskites." Nanomaterials 14, no. 8 (2024): 683. http://dx.doi.org/10.3390/nano14080683.
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The Rashba effect appears in the semiconductors with an inversion–asymmetric structure and strong spin-orbit coupling, which splits the spin-degenerated band into two sub-bands with opposite spin states. The Rashba effect can not only be used to regulate carrier relaxations, thereby improving the performance of photoelectric devices, but also used to expand the applications of semiconductors in spintronics. In this mini-review, recent research progress on the Rashba effect of two-dimensional (2D) organic–inorganic hybrid perovskites is summarized. The origin and magnitude of Rashba spin splitting, layer-dependent Rashba band splitting of 2D perovskites, the Rashba effect in 2D perovskite quantum dots, a 2D/3D perovskite composite, and 2D-perovskites-based van der Waals heterostructures are discussed. Moreover, applications of the 2D Rashba effect in circularly polarized light detection are reviewed. Finally, future research to modulate the Rashba strength in 2D perovskites is prospected, which is conceived to promote the optoelectronic and spintronic applications of 2D perovskites.
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Jihad, Ibnu, Juhri Hendrawan, Adam Sukma Putra, Kuwat Triyana, and Moh Adhib Ulil Absor. "Rashba Effect on Buckled Square Lattice Ge and Sn chalcogenides (MX, M=Ge,Sn, X=O,S,Se,Te) using DFT method." Indonesian Journal of Chemistry 20, no. 3 (2020): 697. http://dx.doi.org/10.22146/ijc.49331.
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The Rashba splitting are found in the buckled square lattice. Here, by applying fully relativistic density-functional theory (DFT) calculation, we confirm the existence of the Rashba splitting in the conduction band minimum of various two-dimensional MX monochalcogenides (M = Ge, Sn and X = S, Se, Te) exhibiting a pair inplane Rashba rotation of the spin textures. A strong correlation has also been found between the size of the Rashba parameter and the atomic number of chalcogen atom for Γ and M point in the first Brillouin zone. Our investigation clarifies that the buckled square lattice are promising for inducing the substantial Rashba splitting suggesting that the present system is promising for spintronics device.
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Chen, Jiajia, Kai Wu, Huanhuan Ma, Wei Hu, and Jinlong Yang. "Tunable Rashba spin splitting in Janus transition-metal dichalcogenide monolayers via charge doping." RSC Advances 10, no. 11 (2020): 6388–94. http://dx.doi.org/10.1039/d0ra00674b.
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Two-dimensional Janus transition-metal dichalcogenides possess an intrinsic Rashba effect, which can be manipulated by charge doping. Electron doping can effectively strengthen the Rashba effect, while hole doping would weaken it.
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Krasnok, Alex. "Photonic Rashba effect." Nature Nanotechnology 15, no. 11 (2020): 893–94. http://dx.doi.org/10.1038/s41565-020-0764-8.
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Hong, Lan, Jun Ge, Shan Shuang, and Da-Quan Liu. "Influence of Rashba effect and Zeeman effect on properties of bound magnetopolaron in an anisotropic quantum dot." Acta Physica Sinica 71, no. 1 (2022): 016301. http://dx.doi.org/10.7498/aps.71.20210803.
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The influence of Rashba effect and Zeeman effect on the properties of bound magnetopolaron in an anisotropic quantum dot are studied with Pekar variational method. The expression of the ground state energy of the bound magnetopolaron is obtained through theoretical derivation. The relationship of the ground state energy of the polaron with the transverse effective confinement length, the longitudinal effective confinement length, the magnetic field cyclotron resonance frequency, and the Coulomb bound potential are discussed, respectively. Owing to the crystal structural inversion asymmetry and the time inversion asymmetry, the polaron energy experiences Rashba spin-orbit splitting and Zeeman splitting. Under the strong and weak magnetic field, we discuss the dominant position of Zeeman effect and Rashba effect, respectively. Owing to the presence of phonons and impurities, the polaron is more stable than the bare electron state.
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Kondo, Kenji. "A Derivation of Aharonov–Casher Phase and Another Adiabatic Approximation for Pure Gauge Under General Rashba Effects." SPIN 06, no. 02 (2016): 1640006. http://dx.doi.org/10.1142/s2010324716400063.
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Spin filters using spin–orbit interaction (SOI) are very important in the field of spintronics. Therefore, a theory of devices using SOI is necessary for designing the spin filters. The spin-filtering devices can be used to generate and detect spin polarized currents. Many researchers have reported on the spin-filters using linear Rashba SOI. However, the spin-filters using square and cubic Rashba SOIs are not yet reported. This is surely because the Aharonov–Casher (AC) phases acquired under square and cubic Rashba SOIs are ambiguous. In this paper, we try to derive the AC phases acquired under [Formula: see text]th order Rashba SOIs, which we call general Rashba SOIs, using non-Abelian SU (2) gauge theory. As a result, we have successfully derived these AC phases without completing the square methods which is useless except for linear Rashba SOI. In the process of derivation of AC phases, we have also found another expression of adiabatic approximation for a pure gauge. This finding will lead to the starting point for deeply understanding the adiabatic approximation. Using the above AC phases under general Rashba SOIs, we investigate the spin filter effect in Aharonov–Bohm (AB) ring with double quantum dots (QDs) under general Rashba SOIs. The spin transport is investigated from left nanowire to right nanowire in this structure within tight binding approximation. Especially, we focus on the difference of spin filter effects among general Rashba SOIs. We have obtained the penetrating magnetic flux dependence of spin polarization for the AB ring subject to general Rashba SOIs. It is found that the perfect spin filtering is achieved for all the Rashba SOIs. This result indicates that this AB ring under general Rashba SOIs can be a promising device for spin current generation without ferromagnetic metals. Moreover, this device under different order Rashba SOI behaves in totally different ways in response to penetrating magnetic flux, which is attributed to [Formula: see text] times rotation of directions of the effective magnetic field in the in-plane momentum. This fact means that we can determine the order of Rashba SOIs according to the peak position. We consider that this is very useful for many researchers.
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Karashtin E.A. "Photovoltaic effect in a ferromagnet with spin-orbit coupling." Physics of the Solid State 64, no. 9 (2022): 1300. http://dx.doi.org/10.21883/pss.2022.09.54170.28hh.
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The effect of the appearance of an electric current induced by the electromagnetic radiation at the interface of a ferromagnet and a non-magnetic material is calculated theoretically, taking into account the Rashba spin-orbit coupling. It is shown that the electric dipole transitions between the spin subbands of the conduction electrons of a ferromagnet due to the Rashba interaction lead to a photocurrent. This current has a resonance at a frequency corresponding to the energy of the exchange splitting of spin subbands. The resonance width is determined by the spin-orbit interaction constant. The estimates show the possibility of experimental observation of this effect in specially prepared multilayer systems. Keywords: Ferromagnet, exchange coupling, Rashba spin-orbit coupling, photovoltaic effect.
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Khordad, R. "Optical properties of wedge-shaped quantum dots under Rashba spin–orbit interaction." International Journal of Modern Physics B 31, no. 08 (2017): 1750055. http://dx.doi.org/10.1142/s0217979217500552.
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In the present paper, the optical properties of a GaAs wedge-shaped quantum dot (QD) under the effect of Rashba spin–orbit interaction (SOI) are theoretically studied. For this purpose, we have used analytical expressions for optical properties obtained by the compact-density matrix formalism. The dependence of the optical absorption coefficients and refractive index changes on the strength of Rashba SOI for different angles and different radii of wedge-shaped QD has been studied. According to the obtained results, it is found that (i) the Rashba SOI does not have considerable effects on the refractive index changes maxima. (ii) The total absorption coefficient is increased and shifted towards higher energies with considering the Rashba SOI. (iii) The influence of Rashba SOI on the optical properties depends on the parameters such as apex angle and radius of the wedge-shaped QD.
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AJAIB, MUHAMMAD ADEEL. "UNDERSTANDING LORENTZ VIOLATION WITH RASHBA INTERACTION." International Journal of Modern Physics A 27, no. 24 (2012): 1250139. http://dx.doi.org/10.1142/s0217751x12501394.
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Rashba spin–orbit interaction is a well-studied effect in condensed matter physics and has important applications in spintronics. The standard model extension (SME) includes a CPT-even term with the coefficient Hμν, which leads to the Rashba interaction term. From the limit available on the coefficient Hμν in the SME we derive a limit on the Rashba coupling constant for Lorentz violation. In condensed matter physics the Rashba term is understood as resulting from an asymmetry in the confining potential at the interface of two different types of semiconductors. Based on this interpretation we suggest that a possible way of inducing the Hμν term in the SME is with an asymmetry in the potential that confines us to three spatial dimensions.
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Niu, Wei, Zhenqi Wu, Yongda Chen та ін. "Evidence of the nontrivial Berry phase at γ-Al2O3/SrTiO3 heterointerfaces". Applied Physics Letters 121, № 10 (2022): 101601. http://dx.doi.org/10.1063/5.0093903.
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The nontrivial Berry phase in correlated oxide heterostructures has been highly attractive due to the Rashba spin–orbit interactions originating from the inversion symmetry breaking at the heterointerfaces. Despite the theoretically predicated nontrivial π Berry phase in Rashba systems, its experimental detection among all Rashba oxide interfaces remains elusive. Here, we report a nontrivial Berry phase at the interface between γ-Al2O3 and SrTiO3 as evidenced by the quantum oscillations. Analysis of transport properties under the high magnetic field up to 32 T reveals the weak anti-localization (WAL) effect and Shubnikov–de Haas (SdH) oscillations. Both the WAL effect and the nontrivial π Berry phase extracted from the SdH oscillations manifest the significance of the Rashba spin–orbit coupling in γ-Al2O3/SrTiO3. Physical quantities concerning the Fermi surface, such as effective mass, scattering time, etc., are experimentally accessed as well. Our work provides insights into the nontrivial Berry phase in correlated oxide interfaces.
Dissertations / Theses on the topic "Effet Rashba"
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Croes, Boris. "Croissance et ferroélectricité du GeTe sur Si (111)." Electronic Thesis or Diss., Aix-Marseille, 2022. http://www.theses.fr/2022AIXM0033.
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L’effet Rashba géant mesuré récemment dans GeTe a montré le potentiel pour la spintronique des matériaux ferroélectriques avec un fort couplage spin-orbite. Dans cette thèse nous avons réalisé la croissance de films minces de GeTe sur Si(111)-Sb par épitaxie par jet moléculaire dans une large gamme d’épaisseur. À 270°C, nous observons une croissance couche-par-couche et une relation d’épitaxie principale GeTe(111) ∥Si(111) et GeTe[110] ∥Si[110]. En outre des nanodomaines ferroélastiques apparaissent dont la fraction volumique ainsi que la taille peuvent être contrôlées en ajustant finement l’épaisseur et la température de dépôt. Leur maille est identique à celle du domaine principal (rhomboédrique avec ar = 0.429 nm et θ = 58.3°). L’axe [111] de leur maille et leur polarisation électrique sont inclinés d’environ 72° par rapport à l’axe [111] du domaine principal. Nous mettons en évidence par microscopie à effet tunnel à la surface des domaines ferroélastiques trois structures surfaciques différentes, En analysant de façon détaillée l’interface GeTe/Si par microscopie électronique en transmission, nous démontrons que les dislocations de désaccord paramétrique localisées à l’interface formées pendant la croissance jouent un rôle clé dans la stabilité des nanodomaines ferroélectriques. Finalement, nous avons caractérisé la structure de bande électronique des domaines majoritaires de GeTe et mesuré une constante Rashba αr = 0.49 eV.nm qui diminue avec l’épaisseur des couches minces. De premières mesures par spectroscopie d’émission de photo-électrons résolues angulairement en dichroïsme circulaire ont permis de caractériser la courbure de Berry des films minces de GeTe<br>The recently measured giant Rashba effect in GeTe has shown the potential for spintronics of ferroelectric materials with large spin-orbit coupling. In this thesis we have grown GeTe thin films on Si(111)-Sb by molecular beam epitaxy in a wide range of thickness. At 270°C, we observe a layer-by-layer growth and a main epitaxial relationship GeTe(111) ∥Si(111) and GeTe[110] ∥Si[110]. In addition, ferroelastic nanodomains appear which volume fraction and size can be controlled by fine tuning the thickness and the deposition temperature. Their unit cell is identical to that of the main domain (rhombohedral with ar = 0.429 nm and θ = 58.3°). The [111] axis of their unit cell and their electrical polarization are tilted by about 72° with respect to the [111] axis of the main domain. We show by scanning tunneling microscopy that the surface of the ferroelastic nanodomains have three different surface structures. By a detailed analysis of the GeTe/Si interface by transmission electron microscopy, we demonstrate that misfit dislocations localized at the interface formed during growth play a key role in the stability of ferroelectric nanodomains. Finally, we have characterized the electronic band structure of the GeTe majority domains and measured a Rashba constant αr = 0.49 eV.nm that decreases with film thickness. First measurements to characterize the Berry curvature are performed by circular dichroism in angle-resolved photoemission spectroscopy
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Noel, Paul. "Dynamical spin injection and spin to charge current conversion in oxide-based Rashba interfaces and topological insulators." Thesis, Université Grenoble Alpes (ComUE), 2019. http://www.theses.fr/2019GREAY062.
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L'utilisation de matériaux ferromagnétiques a longtemps été l'unique méthode pour détecter et produire des courants de spin. Cependant, depuis le milieu des années 2000 des méthodes alternatives ont été proposées. Un champ émergent de la spintronique, appelé spin-orbitronique, s'attelle à l'utilisation du couplage spin orbite pour détecter et produire des courants de spin en l'absence de matériaux ferromagnétiques. Une interconversion efficace entre courant de spin et courant de charge a pu être obtenues à l'aide de l'effet Hall de spin dans les métaux lourds tels que le Platine ou le Tantale. Une telle conversion peut aussi être obtenue en utilisant l'effet Edelstein dans les interfaces Rashba et les isolants topologiques.La conversion de courant de spin à courant de charge par effet Hall de spin et effet Edelstein inverse peut être étudiée par la méthode dite du pompage de spin par résonance ferromagnétique. Ce manuscrit présente ces différents effets de conversion ainsi que la technique utilisée basée sur une mesure électrique effectuée à la résonance ferromagnétique. Y sont présentés des résultats de conversion spin charge dans les métaux, les interfaces Rashba à base d'oxydes ainsi que dans les isolants topologiques. Parmi ces systèmes nous avons montré la possibilité de moduler à l'aide d'une grille électrostatique la conversion spin charge dans un gaz d'électron bidimensionel obtenu à la surface de l'oxyde SrTiO3. De plus il est possible de moduler, de façon rémanente, la conversion dans SrTiO3 grâce à la ferroélectricité obtenue à des températures cryogéniques.Parmi les autres systèmes étudiés les isolants topologiques HgTe et Sb2Te3 présentent des propriétés de conversion spin vers charge prometteuses à température ambiante. En particulier dans le cas de HgTe, en utilisant une couche de protection de HgCdTe nous avons pu obtenir des niveaux de conversion un ordre de grandeur plus élevé que dans le Platine.Ces résultats suggèrent que les gaz d'électrons bidimensionnels aux interfaces d'oxydes ainsi que les isolants topologiques sont des systèmes prometteurs pour la détections de courants de spin pour des applications au delà de la logique CMOS<br>Using a ferromagnetic layer has been the first method to obtain and detect spin currents, allowing to modify the magnetization state of an adjacent layer using spin transfer torque. However, in recent years, an alternative way to manipulate spin currents has been proposed. An emerging field of spintronics, called spin-orbitronics, exploits the interplay between charge and spin currents enabled by the spin-orbit coupling (SOC) in non-magnetic systems. An efficient current conversion can be obtained through the Spin Hall Effect in heavy metals such as Platinum or Tantalum. The conversion can also be obtained by exploiting the Edelstein Effect in Rashba interfaces and topological insulators.The spin to charge conversion by means of Inverse Edelstein Effect and inverse Spin Hall Effect can be studied by the spin pumping by ferromagnetic resonance technique. This manuscript present these two conversion mechanisms as well as the technique that was used to measure them, which is based on an electrical detection of the ferromagnetic resonance. Results on the spin to charge current conversion obtained in metals, oxide-based Rashba interfaces and topological insulators will be presented. Among these systems we have demonstrated the possibility to tune the conversion efficiency by using a gate voltage in a two-dimensional electron gas at the surface of an oxide SrTiO3. Moreover it is possible to tune this effect, a remanent way, thanks to the ferroelectricity obtained in SrTiO3 at cryogenic temperatures.Other studied systems such as topological insulators HgTe and Sb2Te3 also have promising properties for an efficient spin to charge current conversion at room temperature. In particular we showed than in HgTe by using a thin HgCdTe protective layer, it is possible to obtain a spin to charge current conversion efficiency one order of magnitude larger than in Pt.These results suggest that stwo dimensional electron gases at oxide interfaces and topological insulators have a strong potential for the efficient detection of spin currents for possible beyond CMOS applications
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Guillet, Thomas. "Tuning the spin-orbit coupling in Ge for spin generation, detection and manipulation." Thesis, Université Grenoble Alpes, 2020. http://www.theses.fr/2020GRALY033.
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L'un des principaux objectifs de la spintronique est de réaliser le transistor à spin et pour y parvenir, il faut mettre en œuvre avec succès une plateforme où les courants de spin peuvent être facilement injectés, détectés et manipulés à température ambiante. Dans cette optique, ce travail de thèse montre que le germanium est un très bon candidat grâce à ses propriétés optiques et de spin ainsi qu'à sa compatibilité avec les nanotechnologies à base de silicium.Au fil des années, plusieurs schémas d'injection et de détection de spin ont été réalisés dans Ge, mais la manipulation électrique de l'orientation du spin est toujours une pièce manquante. Dans cette thèse, nous nous sommes concentrés sur deux approches afin de manipuler l'interaction spin-orbite (SOI) dans le germanium. Les deux s'appuient sur l'absence de symétrie d'inversion structurale et le couplage spin-orbite aux surfaces et aux interfaces avec le germanium (111). Tout d'abord, nous avons effectué la croissance épitaxiale de l'isolant topologique Bi2Se3 sur Ge (111). Après avoir caractérisé les propriétés structurales et électriques de l'hétérostructure Bi2Se3/ Ge, nous avons développé une méthode originale pour sonder la conversion courant de spin-courant de charge à l'interface entre Bi2Se3 et Ge en tirant profit des propriétés optiques du Ge. Les résultats ont montré que l'hybridation entre les états de surface de Bi2Se3 et du Ge pourrait permettre la manipulation électrique de l'orientation du spin dans un transistor.La seconde approche consiste à exploiter le SOI intrinsèque de Ge (111). J'ai étudié les propriétés électriques d'un film mince de Ge (111) et découvert que le passage du courant dans des états de sous-surface où l'interaction Rashba est forte, induit un effet de magnétorésistance très particulier que nous avons appelé la magnétorésistance Rashba unidirectionnelle. Elle est due à l'interaction entre le champ magnétique appliqué extérieur et le pseudo champ magnétique induit par le courant appliquée dans les états polarisés en spin du Ge (111). La forte intensité et modularité de cet effet nous mène à penser que ces états pourraient être également mis à profit dans la réalisation d'un transistor à spin tout semi-conducteur.Parallèlement, j'ai intégré des jonctions tunnel magnétiques à anisotropie perpendiculaire à base de multicouches (Co/Pt) sur la plateforme de Ge (111). J'ai développé une technique hybride électro-optique originale basée sur une détection électrique du dichroïsme magnétique circulaire du (Co/Pt) pour faire de l’imagerie magnétique. Ces jonctions tunnel magnétiques ont ensuite été utilisées pour effectuer la génération et la détection de spin dans un dispositif de type vanne de spin latérale. L'anisotropie magnétique perpendiculaire permet de générer un courant de spin avec une orientation de spin perpendiculaire au plan de l'échantillon.Enfin, j'ai rassemblé tous ces éléments développés pendant ma thèse dans un dispositif ultime: un prototype de transistor à spin où une accumulation de spin peut être générée et détectée optiquement et/ou électriquement, en utilisant l'orientation optique de spin dans le germanium ou les jonctions tunnel magnétiques<br>One of the main goals of spintronics is to achieve the spin transistor operation and for this purpose, one has to successfully implement a platform where spin currents can be easily injected, detected and manipulated at room temperature. In this sense, this thesis work shows that Germanium is a very good candidate thanks to its unique spin and optical properties as well as its compatibility with Silicon-based nanotechnology.Throughout the years, several spin injection and detection schemes were achieved in Ge but the electrical manipulation of the spin orientation is still a missing part. Recently we focused on two approaches in order to tune the spin-orbit interaction (SOI) in a Ge-based platform. Both rely on the structural inversion asymmetry and the spin-orbit coupling at surfaces and interfaces with germanium (111). First, we performed the epitaxial growth of the topological insulator (TI) Bi2Se3 on Ge (111). After characterizing the structural and electrical properties of the Bi2Se3/Ge heterostructure, we developed an original method to probe the spin-to-charge conversion at the interface between Bi2Se3and Ge by taking advantage of the Ge optical properties. The results showed that the hybridization between the Ge and TI surface states could pave the way for implementing an efficient spin manipulation architecture.The latter approach is to exploit the intrinsic SOI of Ge (111). By investigating the electrical properties of a thin Ge(111) film epitaxially grown on Si(111), we found a large unidirectional Rashba magnetoresistance, which we ascribe to the interplay between the externally applied magnetic field and the current-induced pseudo-magnetic field in the spin-splitted subsurface states of Ge (111). The unusual strength and tunability of this UMR effect open the door towards spin manipulation with electric fields in an all-semiconductor technology platform.In a last step, I integrated perpendicularly magnetized (Co/Pt) multilayers-based magnetic tunnel junctions on the Ge (111) platform. I developed an original electro-optical hybrid technique to detect electrically the magnetic circular dichroism in (Co/Pt) and perform magnetic imagingThese MTJs were then used to perform spin injection and detection in a lateral spin valve device. The perpendicular magnetic anisotropy (PMA) allowed to generate spin currents with the spin oriented perpendicular to the sample plane.Finally, I assembled all these building blocks that were studied during my PhD work to build a prototypical spin transistor. The spin accumulation was generated either optically or electrically, using optical spin orientation in germanium or the injection from the magnetic tunnel junction
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Mouillon, Alexandre. "Couples de spin-orbite dans une couche de métal ferromagnétique ultramince comprise entre deux oxydes : confinement quantique et effet Rashba." Thesis, Université Grenoble Alpes (ComUE), 2019. http://www.theses.fr/2019GREAY034.
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Mis en évidence expérimentalement au début des années 2010, les couples de spin-orbite (SOTs) ont très rapidement suscité un très fort intérêt dans la communauté du magnétisme et de l'électronique de spin. En effet, ils permettent,dans un empilement de type métal lourd / métal ferromagnétique / oxyde (HM/FM/Ox), de manipuler l'aimantation de la couche ferromagnétique (FM) en injectant un courant dans le plan des couches. En remarquant que la bicouche FM/Ox correspond à la moitié d'un empilement typique utilisé dans les cellules mémoires de types MRAM (Magnetic Random Access Memory, mémoire magnétique à accès aléatoire), on comprend que ce mécanisme est très intéressant pour l'écriture de la couche libre de ces cellules. En effet, le courant d'écriture ne traverse plus la barrière tunnel, ce qui répond naturellement à certaines limitations des MRAM actuelles. L'interprétation physique de ces phénomènes s'est cependant révélée particulièrement complexe. Ces couples ont deux composantes, généralement appelée "Field-like", FL, et "Damping-like", DL. Si dans un premier temps, les études théoriques ont prédit que la composante DL provenait principalement d'un effet de volume dans la couche HM,et que la composante FL provenait principalement d'un effet d'interface, des études expérimentales plus récentes ont montré qu'il n'était pas si simple de séparer ces deux contributions.Dans ce travail de thèse, nous avons choisi une approche originale permettant de n'étudier qu'une seule des deux contributions. Pour ce faire, nous avons choisi de nous concentrer sur la contribution interfaciale en étudiant des échantillons de types Ox1/FM/Ox2. Nous avons ainsi pu mettre en évidence dans ces empilements la présence de SOTs ce qui n'était textit{a priori} pas si évident dans une structure ne contenant pas de métal lourd et présentant de surcroît une forte symétrie. D'autre part, nous avons pu montrer que seule la composante FL de ces couples était présente. Le comportement inattendu de ce FL-SOT en fonction de l'épaisseur de la couche FM, nous a conduit à proposer un modèle basé sur la combinaison d'un effet interfacial de type Rahsba et d'un effet de confinement quantique dû à la très faible épaisseur de matériau conducteur dans ces empilements<br>Experimentally demonstrated in the early 2010's, spin-orbite torques (SOTs) very quickly generated a very strong interest in the magnetism and spin electronics community. Indeed, they allow, in a heavy metal / ferromagnetic metal / oxide (HM/FM/Ox) multilayer, to manipulate the magnetization of the ferromagnetic layer (FM) by injecting an in-plane current. Noting that the FM/Ox bilayer corresponds to half of a typical stack used in MRAM memory cells (Magnetic Random Access Memory), we understand that this mechanism is very interesting for writing the free layer of these cells. Indeed, the writing current no longer crosses the tunnel barrier, which naturally responds to some of the limitations of current MRAMs. However, the physical interpretation of these phenomena has proved to be particularly complex. These torques have two components, generally called "Field-like", FL, and "Damping-like", DL. While initially, theoretical studies predicted that the DL component was mainly due to a volume effect in the HM layer, and the FL component was mainly due to an interface effect, more recent experimental studies have shown that it is not so simple to separate these two contributions.In this thesis work, we have chosen an original approach that allows us to study only one of the two contributions. To do so, we have chosen to focus on the interfacial contribution by studying Ox1/FM/Ox2 samples. We were thus able to highlight in these stacks the presence of SOTs, which was not so obvious in a structure that did not contain heavy metal and also had a strong symmetry. On the other hand, we were able to show that only the FL component of these couples was present. The unexpected behaviour of this FL-SOT as a function of the thickness of the FM layer led us to propose a model based on the combination of a Rahsba interfacial effect and a quantum confinement effect due to the very thin thickness of conductive material in these multilayers
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Trifu, Alexandru Vladimir. "Mesures de couples de spin orbite dans des héterostructures métal lourde/ferromagnet à base de Pt, avec anisotropie magnétique planaire." Thesis, Université Grenoble Alpes (ComUE), 2017. http://www.theses.fr/2017GREAY044/document.
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La loi de Moore est basée sur l’observation empirique qu’environ chaque deux années, le nombre de transistors dans des circuits denses intégrées double. Cette tendance s'est bien maintenue au cours des dernières décennies (années 1970 et suivantes). Cependant, la miniaturisation continue des transistors entraîne une augmentation significative des pertes d’énergie par le courant de fuite, ce qui augmente la consommation d'énergie de veille. Cette perte d’énergie est devenue un problème majeur dans la microélectronique pendant les dernières années, ce qui rend plus difficile le développement des nouvelles technologies. L’une des solutions est de placer des éléments mémoire non-volatile dans le puce, qui retiennent la configuration du transistor pendant la mise hors tension et permettent de le restaurer à la mise sous tension. Les Magnetic Random Access Memories (MRAM) sont considérées par l'ITRS comme un candidat crédible pour le remplacement potentiel de SRAM et de DRAM au-delà du nœud technologique de 20 nm. Bien que les exigences de base pour la lecture et l'écriture d'un élément de mémoire unique sont remplies, l'approche actuelle basée sur Spin Torque Transfer (STT) souffre d'un manque inné de la flexibilité. Le courant électrique entraine le retournement de l’aimantation de la couche ferromagnétique libre par le transfert du moment angulaire d’une couche ferromagnétique adjacent. Ainsi les éléments de mémoire basées sur STT ont deux terminaux dont les voies de courant pour « écriture » et « lecture » sont définies par la forme de «pillar». L’optimisation indépendant des paramètres d’écriture et de lecture reste, donc, très difficile. Au même temps, la densité de courant trop haute, nécessaire pour écrire, conduit à la vieillissement prémature du jonction tunnel. En conséquence, l’intégration MRAM dans la technologie du semi-conducteur reste, donc, difficile.Démonstrations récentes de reversement d’aimantation entrainées par l’injection d’un courant planaire dans des heterostructures métal lourd/ferromagnet ont attiré l’attention croissante sur les couples de spin basé sur le transfert du moment angulaire par l’effet Hall de spin et les effets d’interface. Contrairement à STT-MRAM, la SOT-MRAM a trois terminaux, dont les voies de courant pour « écriture » et « lecture » sont indépendantes. Cela permet d’améliorer les paramètres « écriture » et « lecture » de manière indépendante. Pour contrôler et optimiser les SOT il est nécessaire de comprendre très bien leur origine. Cela reste l’une des plus importantes questions dont on n’a pas une réponse définitive. Dans ce contexte, plusieurs études ont conclu sur un modèle basé seulement sur l’effet Hall de spin, en même temps que d’autres ont suggéré un modèle basé sur une contribution combiné de l’effet Hall de spin et l’effet d’interface.L’objectif de cette thèse est de réaliser une étude systématique sur les effets d’interface sur les SOT dans des heterostructures métal lourde/ferromagnet a base de Pt, avec aimantation planaire.Dans ce but, cette thèse explore trois voies différentes. Premièrement nous avons modifié le rapport entre les effets d’interface et les effets bulk en changeant l’épaisseur de la couche de Pt et en suivant l’évolution des SOT. En deuxième nous avons exploré des différents empilements métal lourde/ferromagnet afin d’étudier différentes interfaces. Finalement, nous avons changé les propriétés des interfaces soit par changer la structure cristalline soit par oxydation. La technique de mesure, la méthode d’analyse de données associé et les aspects théoriques nécessaires pour l’interprétation des données sont aussi détaillés dans ce manuscrit<br>Moore’s law is based on empirical observation and states that every two years approximately, the number of transistors in dense integrated circuits doubles. This trend has held up well in the past several decades (1970s and onwards). However, the continuous miniaturisation of transistors brings about a significant increase in leakage current, which increases the stand-by power consumption. This energy loss has become a major problem in microelectronics during the last several years, making the development of new technologies more difficult. One of the solutions that can address this issue is to place non-volatile memory elements inside the chip, that retain the configuration of the transistor during power-off and allow to restore it at power-on. Magnetic Random Access Memories (MRAM) are considered by the ITRS as a credible candidate for the potential replacement for SRAM and DRAM beyond the 20 nm technological node. Though the basic requirements for reading and writing a single memory element are fulfilled, the present approach based on Spin Transfer Torque (STT) suffers from an innate lack of flexibility. The electric current drives the magnetization switching of a free ferromagnetic layer by transferring angular momentum from an adjacent ferromagnet. Therefore, STT-based memory elements are two terminal devices in which the “pillar” shape defines both the “read” and the “write” current paths. Independent optimisation of the reading and writing parameters is therefore difficult, while the large writing current density injected through the tunnel barrier causes its accelerated ageing, particularly for fast switching. Consequently, the integration of MRAM into semiconductor technology poses significant difficulties.Recent demonstrations of magnetization switching induced by in-plane current injection in heavy metal (HM)/ferromagnet (FM) heterostructures have drawn increasing attention to spin-torques based on orbital-to-spin momentum transfer induced by Spin Hall and interfacial effects (SOTs). Unlike STT-MRAM, the in-plane current injection geometry of SOT-MRAM allows for a three-terminal device which decouples the “read” and “write” mechanisms, allowing the independent tuning of reading and writing parameters. However, an essential first step in order to control and optimise the SOTs for any kind of application, is to better understand their origin. The origin of the SOTs remains one of the most important unanswered questions to date. While some experimental studies suggest a SHE (Spin Hall Effect)-only model for the SOTs, others point towards a combined contribution of the bulk (SHE) and interface (Rashba Effect and Interfacial SHE). At the same time, many studies start with a SHE only hypothesis and do not consider interfacial effects. Furthermore, there are not so many systematic studies on the effects of interfaces. This thesis tries to fill in this gap, by providing a systematic study on the effects of interfaces on the SOTs, in Pt-based NM/FM/HM multilayers with in-plane magnetic anisotropy. For this purpose, this thesis explores three different, but related avenues. First, we changed the interface/bulk effect ratio by modifying the Pt thickness and following the evolution of the SOTs. Second, we explored different HM/FM/NM combinations, in order to study different interfaces. And third, we changed the properties of the interfaces by changing the crystallographic structure of the interface and by oxidation. The measurement technique and associated data analysis method, as well as the theoretical considerations needed for the interpretation of the results are also detailed in this manuscript
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Drouard, Marc. "Etude de l'origine des couples magnétiques induits par le couplage spin orbite dans des structures asymétriques à base de Co/Pt." Thesis, Grenoble, 2014. http://www.theses.fr/2014GRENY057/document.
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Afin de réduire la consommation de puissance des futures générations de systèmesélectroniques, une solution est d’intégrer de la non-volatilité au sein même des cellulesmémoires. Dans cette optique, l’utilisation du retournement de l’aimantation d’un matériauferromagnétique comme support de l’information a été utilisée initialement dans un conceptde mémoire, la MRAM. La dernière évolution de cette technologie, la SOT-RAM, utilise desphénomènes nouveaux appelés SOTs afin de contrôler la direction de l’aimantation. Parrapport aux générations précédentes (STT-MRAM notamment), elle devrait permettred’améliorer la vitesse d’écriture en conservant une endurance adaptée pour des utilisations enmémoires cache où en mémoire centrale. Le terme SOTs est une dénomination généraledésignant l’ensemble des effets, encore mal connus, liés au couplage spin-orbite et permettantle retournement de l’aimantation d’une cellule mémoire.Ce travail de thèse a eu pour objectif d’étudier les SOTs via un système expérimental demesure quasi-statique basé sur les effets Hall extraordinaires et planaires. Sonimplémentation et la méthode d’analyse associée, ainsi que les considérations théoriquesnécessaires à l’interprétation des résultats sont détaillées dans ce manuscrit. Il a été montréque le retournement de l’aimantation dans des systèmes à aimantation perpendiculaire à basede cobalt-platine ne peut être expliqué par les modèles simples considérés jusqu’à présentdans la littérature. En effet, il a été mis en évidence qu’au moins deux effets simultanés doiventêtre pris en compte pour expliquer les phénomènes observés. Par ailleurs, ceux-ci présententune sensibilité différente à la fois à une altération de la structure cristalline et à une variationde température<br>In order to reduce power consumption in next generations’ electronic devices, one potentialsolution is to implement non-volatility in memory cells. In this goal, the magnetizationswitching of a ferromagnetic material has been used in a memory concept: the MRAM. Thelatest development of this technology, called SOT-RAM, is based on new phenomena calledSOTs (Spin-Orbit Torques) in order to control magnetization direction. Contrary to precedentgenerations (STT-MRAM), it should achieve a higher operating speed and an enduranceadapted for cache and main memories applications. SOTs is a generic term referring to all theeffects, linked to the spin-orbit interaction, and that enable magnetization reversal. They areyet not perfectly understood.The main objective of this Ph.D. was then to study these SOTs through a quasi-staticexperimental measurement setup based on anomalous and planar Hall effects. Itsimplementation and the associated analysis method, as well as the required theoreticalconsiderations for data interpretation are detailed in this manuscript. It has been highlightedthat magnetization switching in perpendicularly magnetization cobalt-platinum systemscannot be explained by the simple models considered thus far in the literature. As a matter offact it has been evidenced that at least two effects have to be considered in order to explainobserved phenomena. In addition, they present different susceptibility both to a modificationof the crystal structure and to a temperature change
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Hernangomez, Perez Daniel. "Spin-orbit Coupling and Strong Interactions in the Quantum Hall Regime." Thesis, Grenoble, 2014. http://www.theses.fr/2014GRENY087.
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L'effet Hall quantique, qui apparaît dans les gaz d'électrons bidimensionnels soumis à un champ magnétique perpendiculaire et à basses températures, a été un sujet de recherche intense pendant les derniers trente ans, en particulier, à cause des manifestations spectaculaires de la mécanique quantique dans les propriétés de transport à l'échelle macroscopique. Dans cette thèse, on étend l'horizon de la recherche au niveau théorique sur ce sujet en considérant les effets du couplage spin-orbite et l'interaction électron-électron de façon analytique dans ce régime.Dans la première partie de ce manuscrit, on considère l'effet simultané du couplage spin-orbite de type Rashba et l'interaction Zeeman dans le régime de l'effet Hall quantique entier. Pour cela, on étend un formalisme de fonctions de Green basé sur des états de vortex cohérents avec l'objectif d'inclure le couplage entre les degrés de liberté orbitaux et de spin dans les états de dérive électroniques. Puis, comme première application, on montre comment obtenir analytiquement, nonperturbativement et de manière contrôlée des fonctionnelles quantiques (spectre et densité d'états locale) pour des potentiels électrostatiques arbitraires et localement plats. Les fonctionnelles sont ensuite analysées dans différents régimes de températures et comparées aux données expérimentales obtenues à partir des sondes de spectroscopie locales. Comme seconde mise en pratique du formalisme, on étudie en profondeur les propriétés de transport de charge et de spin dans un régime hydrodynamique d'équilibre local (ou quasi-équilibre) et dérive des expressions analytiques qui incorporent les caractères non-relativiste et relativiste des gaz d'électrons avec couplage spin-orbite de type Rashba.Dans la deuxième partie de cette thèse, on s'occupe du problème de traiter analytiquement les fortes interactions électron-électron dans le régime de l'effet Hall quantique fractionnaire. A cette fin, on étudie un problème à deux corps généralisé avec du désordre et des corrélations électroniques, en utilisant une nouvelle représentation d'états de vortex cohérents. Des corrélations à longue portée entre les particules sont incorporées de manière topologique à travers la présence d'une métrique non-Euclidienne. Subséquemment, on montre que ces états de vortex forment bien une base d'un espace de Hilbert élargi, puis on dérive l'équation du mouvement pour la fonction de Green. Enfin, on vérifie la consistance de notre théorie pour tout niveau de Landau de paire et on discute la nécessité d'aller au-delà de la limite semiclassique (à champ magnétique infinie) pour obtenir des gaps dans chaque niveau de énergie<br>The quantum Hall effect, appearing in disordered two-dimensional electron gases under strong perpendicular magnetic fields and low temperatures, has been a subject of intense research during the last thirty years due to its very spectacular macroscopic quantum transport properties. In this thesis, we expand the theoretical horizon by analytically considering the effects of spin-orbit coupling and strong electron-electron interaction in these systems.In the first part of the manuscript, we examine the simultaneous effect of Rashba spin-orbit and Zeeman interaction in the integer quantum Hall regime. Under these conditions, we extend a coherent-state vortex Green's function formalism to take into account the coupling between orbital and spin degrees of freedom within the electronic drift states. As a first application of this framework, we analytically compute controlled microscopic nonperturbative quantum functionals, such as the energy spectrum and the local density of states, in arbitrary locally flat electrostatic potential landscapes, which are then analyzed in detail in different temperature regimes and compared to scanning tunnelling experimental data. As a second application, we thoroughly study local equilibrium charge and spin transport properties and derive analytical useful formulas which incorporate the mixed non-relativistic and relativistic character of Rashba-coupled electron gases.In the second part of this thesis, we deal with the problem of analytically incorporating strong electron-electron interactions in the fractional quantum Hall regime. To this purpose, we consider a generalized two-body problem where both disorder and correlations are combined and introduce a new vortex coherent-state representation of the two-body states that naturally include long-range correlations between the electrons. The novelty of this theory is that correlations are topologically built in through the non-Euclidean metric of the Hilbert space. Next, we show that this kind of vortex states form a basis of an enlarged Hilbert space and derive the equation of motion for the Green's function in this representation. Finally, we check the consistency of our approach for any Landau level of the pair and discuss the necessity of going beyond the semiclassical (infinite magnetic field) approximation to obtain energy gaps within each energy level
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Haspot, Victor. "Exploitation d’hétérostructures d’oxydes intégrant La₂⁄₃Sr₁⁄₃MnO₃ pour des applications spin-orbitroniques et magnoniques." Thesis, université Paris-Saclay, 2020. http://www.theses.fr/2020UPASP079.
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Les dispositifs spintroniques classiques utilisent l'interaction d'échange entre les spins des électrons de conduction et les moments magnétiques locaux dans les matériaux magnétiques pour créer des courants polarisés en spin, ou pour manipuler l’aimantation par transfert de spin à partir de courants polarisés en spin. Une nouvelle direction de la spintronique - appelée aussi spin-orbitronique - exploite le couplage spin-orbite dans les matériaux non magnétiques au lieu de l'interaction d'échange dans les matériaux magnétiques dans le but de générer, détecter ou exploiter des courants polarisés en spin. Une autre voie - la magnonique - explore quant à elle le potentiel des ondes de spin pour transporter et traiter des informations dans des nanostructures magnétiques. Pour une large gamme d'applications dans ces deux domaines, des matériaux avec des très faibles valeurs d'amortissement magnétique sont nécessaires. Dans cette thèse, nous avons d'abord exploré le potentiel du matériau demi-métallique La₂⁄₃Sr₁⁄₃MnO₃ (LSMO) pour obtenir de très faible valeur d’amortissement magnétique. Nous avons étudié notamment l'effet de la contrainte et de la température sur les processus de relaxations magnétiques des couches minces LSMO. Par la suite, les films LSMO ont été utilisés comme injecteurs de spin dans des hétérostructures d’oxydes dans une perspective spin-orbitronique. Aussi, nous avons étudié l'opportunité de contrôler l'interconversion spin-charge en ajoutant un matériau ferroélectrique, BiFeO₃ (BFO) en exploitant les effets d'interfaces. Enfin, nous avons exploré le potentiel des bicouches LSMO / BFO dans le but de réaliser des cristaux magnoniques reprogrammables<br>Classical spintronic devices use the exchange interaction between conduction electron spins and local spins in magnetic materials to create spin-polarized currents, or to manipulate nanomagnets by spin transfer from spin-polarized currents. A novel direction of spintronics –called spin-orbitronics - exploits the spin-orbit coupling in nonmagnetic materials instead of the exchange interaction in magnetic materials to generate, detect or exploit spin-polarized currents. Another one –magnonics- explores the potential of spin waves to carry and process information in magnetic nanostructures. For a broad range of applications in both fields, materials with ultralow magnetic damping values are required. In this thesis we first explored the potential of the half metallic material La₂⁄₃Sr₁⁄₃MnO₃ (LSMO) to obtain very low damping. We studied the effect of strain and temperature on the damping of LSMO thin films. Subsequently, LSMO films were used as spin-current injectors in spin-orbitronic heterostructures. In those we also studied the opportunity to control the spin-charge interconversion by adding a ferroelectric material, BiFeO₃ (BFO) by exploiting the interface effects. Finally, we explored the potential of LSMO/BFO bilayers for reprogrammable magnonic crystals
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Pérez, Oscar Andres Babilonia. "Efeito Rashba em isolantes topológicos." Universidade de São Paulo, 2016. http://www.teses.usp.br/teses/disponiveis/43/43134/tde-22122016-131859/.
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Neste trabalho de mestrado apresentamos um estudo sobre a manifestação do efeito Rashba em isolantes topológicos na ausência de simetria de inversão estrutural. Os cálculos das propriedades atomísticas, energéticas e as estruturas eletrônicas são abordados através de métodos de primeiros princípios baseados na teoria do funcional da densidade. E seus resultados foram utilizados para o desenvolvimento de hamiltoniana efetiva baseado no modelo de Zhang. Realizamos o estudo de dois sistemas: 1) Bi$_2$Se$_3$ com átomos de Sn depositados na superfície: Este sistema pode ser entendido através da manifestação do efeito Rashba sobre um isolante topológico dada a quebra de simetria de inversão estrutural. Para um sítio de deposição específico, os átomos de Sn causam uma reconstrução da superfície e um terceiro cone de Dirac é observado na estrutura eletrônica. Este terceiro cone é não localizado na superfície e pode ser entendido como a manifestação do efeito Rashba. 2) PbBiI: Reportado aqui como um novo isolante topológico 2D com efeito Rashba. Descobrimos este sistema por um estudo sistemático sobre uma família de materiais formados por átomos tipo IV, V, e VII, cuja estrutura cristalina é hexagonal e não centrossimétrica. Mostramos que o PbBiI possui: i) Estabilidade mecânica, ii) Spin-splitting Rashba de 60 meV, iii) um gap de energia não trivial de 0.14 eV, iv) retroespalhamento proibido entre os estados de borda e v) retroespalhamento proibido entre os estados do bulk no entorno do nível de Fermi. Estas propriedades fazem do PbBiI um candidato para construção de dispositivos de spintrônica que atenua a perda de energia.<br>In this work, were studied the Rashba effect in topological insulators without structural inversion symmetry. We performed a first principles study based on density functional theory to calculate the atomistic properties, formation energy and electronic structure. These results were used to development a effective Hamiltonian based on Zhang model. They were studied two systems: 1) Bi$_2$Se$_3$ with Sn atoms deposited on the surface: This system can be seen as the Rashba effect manifestation on a topological insulator due to the structural inversion symmetry breaking. For a specific deposition site, the Sn atoms cause a reconstruction of the surface and display a third Dirac cone in the electronic structure. This third cone is not located on the surface and can be understood as the giant Rashba effect manifestation. 2) We propose a new non-centrosymmetric honeycomb-lattice QSH insulator family formed by the IV, V, and VII elements. The system formed by Bi, Pb and I atoms is reported here as a new 2D topological insulator with Rashba effect. We show that this system has: i) Mechanical stability, ii) spin-splitting Rashba of 60 meV, iii) nontrivial energy gap of 0.14 eV, iv) backscattering forbidden for both edge and bulk conductivity channels in the nanoribbon band structure. These properties make PbBiI a good candidate to construct spintronic devices with less energy loss.
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Krupin, Oleg. "Dichroism and Rashba effect at magnetic crystal surfaces of rare earth metals." [S.l. : s.n.], 2004. http://www.diss.fu-berlin.de/2004/249/index.html.
Full textBooks on the topic "Effet Rashba"
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Takayama, Akari. High-Resolution Spin-Resolved Photoemission Spectrometer and the Rashba Effect in Bismuth Thin Films. Springer Japan, 2015. http://dx.doi.org/10.1007/978-4-431-55028-0.
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Noguchi, Ryo. Designing Topological Phase of Bismuth Halides and Controlling Rashba Effect in Films Studied by ARPES. Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-1874-2.
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Takayama, Akari. High-Resolution Spin-Resolved Photoemission Spectrometer and the Rashba Effect in Bismuth Thin Films. Springer, 2014.
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Takayama, Akari. High-Resolution Spin-Resolved Photoemission Spectrometer and the Rashba Effect in Bismuth Thin Films. Springer, 2016.
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Takayama, Akari. High-Resolution Spin-Resolved Photoemission Spectrometer and the Rashba Effect in Bismuth Thin Films. Springer Japan, 2014.
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Noguchi, Ryo. Designing Topological Phase of Bismuth Halides and Controlling Rashba Effect in Films Studied by ARPES. Springer, 2022.
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Cook, Stephen L. Ezekiel 38–48. Yale University Press, 2018. http://dx.doi.org/10.5040/9780300262193.
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Stephen L. Cook offers an accessible translation and interpretation of the final sections of Ezekiel. These chapters, the most challenging texts of scripture, describe the end-time assault of Gog of Magog on Israel and provide an incredible visionary tour of God’s utopian temple. Following the approach of Moshe Greenberg, the author of the preceding Anchor Yale Bible commentaries on Ezekiel, this volume grounds interpretation of the book in an intimate acquaintance with Ezekiel’s source materials, its particular patterns of composition and rhetoric, and the general learned, priestly workings of the Ezekiel school. The commentary honors Greenberg’s legacy by including insights from traditional Jewish commentators, such as Rashi, Kimhi, and Eliezer of Beaugency. In contrast to preceding commentaries, the book devotes special attention to the Zadokite idea of an indwelling, anthropomorphic “body” of God, and the enlivening effect on people and land of that indwelling.
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Cook, Stephen L. Ezekiel 38–48. Yale University Press, 2018. http://dx.doi.org/10.5040/9780300262193.
Full textAbstract:
Stephen L. Cook offers an accessible translation and interpretation of the final sections of Ezekiel. These chapters, the most challenging texts of scripture, describe the end-time assault of Gog of Magog on Israel and provide an incredible visionary tour of God’s utopian temple. Following the approach of Moshe Greenberg, the author of the preceding Anchor Yale Bible commentaries on Ezekiel, this volume grounds interpretation of the book in an intimate acquaintance with Ezekiel’s source materials, its particular patterns of composition and rhetoric, and the general learned, priestly workings of the Ezekiel school. The commentary honors Greenberg’s legacy by including insights from traditional Jewish commentators, such as Rashi, Kimhi, and Eliezer of Beaugency. In contrast to preceding commentaries, the book devotes special attention to the Zadokite idea of an indwelling, anthropomorphic “body” of God, and the enlivening effect on people and land of that indwelling.
Book chapters on the topic "Effet Rashba"
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Litvinov, Vladimir. "Rashba Effect in Topological Quantum Wells." In Magnetism in Topological Insulators. Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-12053-5_5.
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Takayama, Akari. "Anomalous Rashba Effect of a Bi Thin Film on Si(111)." In High-Resolution Spin-Resolved Photoemission Spectrometer and the Rashba Effect in Bismuth Thin Films. Springer Japan, 2014. http://dx.doi.org/10.1007/978-4-431-55028-0_4.
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Takayama, Akari. "Rashba Effect at Interface of a Bi Thin Film on Si(111)." In High-Resolution Spin-Resolved Photoemission Spectrometer and the Rashba Effect in Bismuth Thin Films. Springer Japan, 2014. http://dx.doi.org/10.1007/978-4-431-55028-0_5.
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Johnson, P. D. "Electronic structure in the surface region: the Rashba effect and surface states." In Physics of Solid Surfaces. Springer Berlin Heidelberg, 2018. http://dx.doi.org/10.1007/978-3-662-53908-8_98.
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Takayama, Akari. "Introduction." In High-Resolution Spin-Resolved Photoemission Spectrometer and the Rashba Effect in Bismuth Thin Films. Springer Japan, 2014. http://dx.doi.org/10.1007/978-4-431-55028-0_1.
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Takayama, Akari. "Basic Principle of Photoemission Spectroscopy and Spin Detector." In High-Resolution Spin-Resolved Photoemission Spectrometer and the Rashba Effect in Bismuth Thin Films. Springer Japan, 2014. http://dx.doi.org/10.1007/978-4-431-55028-0_2.
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Takayama, Akari. "Development of High Resolution Spin-Resolved Photoemission Spectrometer." In High-Resolution Spin-Resolved Photoemission Spectrometer and the Rashba Effect in Bismuth Thin Films. Springer Japan, 2014. http://dx.doi.org/10.1007/978-4-431-55028-0_3.
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Takayama, Akari. "Conclusion." In High-Resolution Spin-Resolved Photoemission Spectrometer and the Rashba Effect in Bismuth Thin Films. Springer Japan, 2014. http://dx.doi.org/10.1007/978-4-431-55028-0_6.
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Labanino, Rafael, Michael Dobbins, and Rafał Riedel. "There Is No Tabula Rasa – the effect of varieties of communism on organizational formation rates in pre-transition interest group populations." In Exploring Organized Interests in Post-Communist Policy-Making. Routledge, 2021. http://dx.doi.org/10.4324/9781003049562-4.
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Qin, Zhenzhen. "Optimization of Thermoelectric Properties Based on Rashba Spin Splitting." In Thermoelectricity [Working Title]. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.98788.
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In recent years, the application of thermoelectricity has become more and more widespread. Thermoelectric materials provide a simple and environmentally friendly solution for the direct conversion of heat to electricity. The development of higher performance thermoelectric materials and their performance optimization have become more important. Generally, to improve the ZT value, electrical conductivity, Seebeck coefficient and thermal conductivity must be globally optimized as a whole object. However, due to the strong coupling among ZT parameters in many cases, it is very challenging to break the bottleneck of ZT optimization currently. Beyond the traditional optimization methods (such as inducing defects, varying temperature), the Rashba effect is expected to effectively increase the S2σ and decrease the κ, thus enhancing thermoelectric performance, which provides a new strategy to develop new-generation thermoelectric materials. Although the Rashba effect has great potential in enhancing thermoelectric performance, the underlying mechanism of Rashba-type thermoelectric materials needs further research. In addition, how to introduce Rashba spin splitting into current thermoelectric materials is also of great significance to the optimization of thermoelectricity.
Conference papers on the topic "Effet Rashba"
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Qi, Jingbo. "THz Radiation via Inverse Rashba-Edelstein effect." In International Symposium on Ultrafast Phenomena and Terahertz Waves. OSA, 2018. http://dx.doi.org/10.1364/isuptw.2018.wc4.
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Yin, Y., J. Kim, D. Han, et al. "Rashba-effect induced chiral magnetic domain-wall resistance." In 2015 IEEE International Magnetics Conference (INTERMAG). IEEE, 2015. http://dx.doi.org/10.1109/intmag.2015.7157624.
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Komissarov, I., J. Cheng, D. Chakraborty, et al. "Femtosecond spin-to-charge current conversion in FeCo/graphene nanobilayer excited by femtosecond optical laser pulse." In CLEO: Fundamental Science. Optica Publishing Group, 2023. http://dx.doi.org/10.1364/cleo_fs.2023.ff2g.5.
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The generation of THz transients in a FeCo/graphene nanobilayer, excited by femtosecond optical laser pulses is demonstrated. We assign the mechanism of the THz radiation to the inverse Rashba-Edelstein effect in graphene with λREE on the order of 0.001 nm.
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Lamari, S. "Role of Potential Steps on the Rashba Effect in Quantum Wells." In NANOTECHNOLOGY AND ITS APPLICATIONS: First Sharjah International Conference on Nanotechnology and Its Applications. AIP, 2007. http://dx.doi.org/10.1063/1.2776687.
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Gvozdić, D. M. "Strong Enhancement of Rashba Effect in Strained p-type Quantum Wells." In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994649.
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Sajedi, Maryam, Maxim Krivenkov, Dmitry Marchenko, et al. "Absence of giant Rashba effect in the valence band of CsPbBr3." In 2nd nanoGe International Conference on Perovskite Thin Film Photovoltaics and Perovskite Photonics and Optoelectronics. Fundació Scito, 2019. http://dx.doi.org/10.29363/nanoge.nipho.2020.026.
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Schapers, Thomas. "Investigations towards Semiconductor/Ferromagnet Spin Transistors: Rashba Effect, Local Hall Effect and Spin Injection." In 2002 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2002. http://dx.doi.org/10.7567/ssdm.2002.f-8-1.
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Iha, Wataru, Shinya Matsuda, Masashi Kakihana, et al. "Anomalous Hall Effect in Antiferromagnet EuNiGe3 with the Rashba-type Tetragonal Structure." In Proceedings of the International Conference on Strongly Correlated Electron Systems (SCES2019). Journal of the Physical Society of Japan, 2020. http://dx.doi.org/10.7566/jpscp.30.011092.
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Bleibaum, O., and S. Wachsmuth. "Spin-Hall Effect in Semiconductor Heterostructures with Cubic Rashba Spin-Orbit Interaction." In PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. AIP, 2007. http://dx.doi.org/10.1063/1.2730362.
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Maguid, Elhanan, Michael Yannai, Arkady Faerman, Igor Yulevich, Vladimir Kleiner, and Erez Hasman. "Disordered Geometric Phase: Photonic Transition from Spin Hall to Random Rashba Effect." In CLEO: QELS_Fundamental Science. OSA, 2018. http://dx.doi.org/10.1364/cleo_qels.2018.fth4j.8.
Full textReports on the topic "Effet Rashba"
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Li, Shujuan, Qiaoqiao Zhu, Juan Wu, and Yuping Sa. Clinical Evidence for Acupuncture Related to the Improvement of Female Stress Urinary Incontinence:A systematic Review and Meta-Analysis. INPLASY - International Platform of Registered Systematic Review and Meta-analysis Protocols, 2022. http://dx.doi.org/10.37766/inplasy2022.5.0135.
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Review question / Objective: The purpose of this systematic review is to evaluate the effect of acupuncture on SUI and the quality of life-based on the latest literature. Condition being studied: At least 25% of adult females in the world have urinary incontinence in some measure, of which more than half are stress urinary incontinence (SUI). SUI seriously affects the mental health of patients, but also leads to perineal rash, urinary tract infection, and other harms. The American Urological Association recommends pelvic floor muscle training (PFMT) as a conservative treatment for patients with mild to moderate SUI, but the cost of treatment is the main obstacle to its wide use of it. Acupuncture is one of the traditional therapies in ancient China, which is simple and cheap. Some systematic reviews and meta-analyses provide evidence for acupuncture in the treatment of SUI. Due to the quality of the study, these research results are not very reliable.
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Tang, Jiqin, Gong Zhang, Jinxiao Xing, Ying Yu, and Tao Han. Network Meta-analysis of Heat-clearing and Detoxifying Oral Liquid of Chinese Medicines in Treatment of Children’s Hand-foot-mouth Disease：a protocol for systematic review. INPLASY - International Platform of Registered Systematic Review and Meta-analysis Protocols, 2022. http://dx.doi.org/10.37766/inplasy2022.1.0032.
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Review question / Objective: The type of study was clinical randomized controlled trial (RCT). The object of study is the patients with HFMD. There is no limit to gender and race. In the case of clear diagnosis standard, curative effect judgment standard and consistent baseline treatment, the experimental group was treated with pure oral liquid of traditional Chinese medicine(A: Fuganlin oral liquid, B: huangzhihua oral liquid, C: Lanqin oral liquid, D: antiviral oral liquid, E: Huangqin oral liquid, F: Pudilan oral liquid, G: Shuanghuanglian oral liquid.)and the control group was treated with ribavirin or any oral liquid of traditional Chinese medicine. The data were extracted by two researchers independently, cross checked and reviewed according to the pre-determined tables. The data extraction content is (1) Basic information (including the first author, published journal and year, research topic). (2) Relevant information (including number of cases, total number of cases, gender, age, intervention measures, course of treatment of the experimental group and the control group in the literature). (3) Design type and quality evaluation information of the included literature. (4) Outcome measures (effective rate, healing time of oral ulcer, regression time of hand and foot rash, regression time of fever, adverse reactions.). The seven traditional Chinese medicine oral liquids are comparable in clinical practice, but their actual clinical efficacy is lack of evidence-based basis. Therefore, the purpose of this study is to use the network meta-analysis method to integrate the clinical relevant evidence of direct and indirect comparative relationship, to make quantitative comprehensive statistical analysis and sequencing of different oral liquid of traditional Chinese medicine with the same evidence body for the treatment of the disease, and then to explore the advantages and disadvantages of the efficacy and safety of different oral liquid of traditional Chinese medicine to get the best treatment plan, so as to provide reference value and evidence-based medicine evidence for clinical optimization of drug selection. Condition being studied: Hand foot mouth disease (HFMD) is a common infectious disease in pediatrics caused by a variety of enteroviruses. Its clinical manifestations are mainly characterized by persistent fever, hand foot rash, oral herpes, ulcers, etc. Because it is often found in preschool children, its immune system development is not perfect, so it is very vulnerable to infection by pathogens and epidemic diseases, resulting in rapid progress of the disease. A few patients will also have neurogenic pulmonary edema Meningitis, myocarditis and other serious complications even lead to death, so effectively improve the cure rate, shorten the course of disease, prevent the deterioration of the disease as the focus of the study. In recent years, traditional Chinese medicine has played an important role in the research of antiviral treatment. Many clinical practices have confirmed that oral liquid of traditional Chinese medicine can effectively play the role of antiviral and improve the body's immunity.