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Relevant bibliographies by topics / EL2

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Academic literature on the topic 'EL2'

Author: Grafiati

Published: 4 June 2021

Last updated: 9 February 2022

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Journal articles on the topic "EL2"

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Banerjee, Antara A., Madhavi Dupakuntla, Bhakti R. Pathak, and Smita D. Mahale. "FSH receptor-specific residues L501 and I505 in extracellular loop 2 are essential for its function." Journal of Molecular Endocrinology 54, no. 3 (2015): 193–204. http://dx.doi.org/10.1530/jme-14-0275.

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The extracellular loop 2 (EL2) of FSH receptor (FSHR) plays a pivotal role in various events downstream of FSH stimulation. Because swapping the six FSHR-specific residues in EL2 (chimeric EL2M) with those from LH/choriogonadotropin receptor resulted in impaired internalization of FSH–FSHR complex and low FSH-induced cAMP production, six substitution mutants of EL2 were generated to ascertain the contribution of individual amino acids to the effects shown by chimeric EL2M. Results revealed that L501F mainly and I505V to a lesser extent contribute to the diminished receptor function in chimeric

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Yokota, Katsuhiro, Hideto Kuchii, Kazuhiro Nakamura, Masanori Sakaguchi, Hiromichi Takano, and Yasunori Ando. "EL2, EL3, and EL6 defects in GaAs highly implanted with sulfur." Journal of Applied Physics 88, no. 9 (2000): 5017–21. http://dx.doi.org/10.1063/1.1315331.

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Golvankar, Kapil, Mohammed Abdul Kader, Abhilash Abdul Latheef, Ahamed Babiker Mohammed Ali, Shahabe Saquib Abullais, and Mohammed Sibagathullah. "Comparison of Accuracy in Determining the Root Canal Working Length by Using Two Generations of Apex Locators – An In Vitro Study." Open Access Macedonian Journal of Medical Sciences 7, no. 19 (2019): 3276–80. http://dx.doi.org/10.3889/oamjms.2019.696.

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AIM: The present in-vitro study aims to compare the accuracy of root canal working length determination between the third generation and fourth generation electronic apex locators. MATERIAL AND METHODS: Fifty extracted single-rooted single canal teeth were selected for the study, and a definite coronal plane was prepared. Actual working length (AL) was measured using a stereomicroscope under 8X magnification. Electronic working length measurements were recorded using Root ZX (EL1) and Elements Diagnostic Unit (EL2) apex locators. One-way ANOVA test was carried out to analyse the data amo

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Shimizu, Yoshimi, Yoshitaka Shirasago, Takeru Suzuki, et al. "Characterization of monoclonal antibodies recognizing each extracellular loop domain of occludin." Journal of Biochemistry 166, no. 4 (2019): 297–308. http://dx.doi.org/10.1093/jb/mvz037.

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Abstract The tight junction protein occludin (OCLN) is a four-pass transmembrane protein with two extracellular loops (ELs), and also functions as a co-receptor for hepatitis C virus (HCV). Recently, we reported the establishment of monoclonal antibodies (mAbs) recognizing each intact EL domain of OCLN that can strongly prevent HCV infection in vitro and in vivo, and these mAbs were applicable for flow cytometric (FCM) analysis, immunocytochemistry (ICC) and cell-based enzyme-linked immunosorbent assay. In the present study, we further examined the application of these anti-OCLN mAbs and chara

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Uysal, Fatih, Fırat Hardalaç, Ozan Peker, Tolga Tolunay, and Nil Tokgöz. "Classification of Shoulder X-ray Images with Deep Learning Ensemble Models." Applied Sciences 11, no. 6 (2021): 2723. http://dx.doi.org/10.3390/app11062723.

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Fractures occur in the shoulder area, which has a wider range of motion than other joints in the body, for various reasons. To diagnose these fractures, data gathered from X-radiation (X-ray), magnetic resonance imaging (MRI), or computed tomography (CT) are used. This study aims to help physicians by classifying shoulder images taken from X-ray devices as fracture/non-fracture with artificial intelligence. For this purpose, the performances of 26 deep learning-based pre-trained models in the detection of shoulder fractures were evaluated on the musculoskeletal radiographs (MURA) dataset, and

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Gelczuk, Łukasz, Maria Dąbrowska-Szata, Beata Ściana, et al. "Characterization of deep-level defects in GaNAs/GaAs heterostructures grown by APMOVPE." Materials Science-Poland 34, no. 4 (2016): 726–34. http://dx.doi.org/10.1515/msp-2016-0126.

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AbstractConventional deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS techniques were used to study electrical properties of deep-level defects in dilute GaNAs epitaxial layers grown by atmospheric-pressure metalorganic vapourphase epitaxy (APMOVPE) on the GaAs substrate. Three samples with nitrogen concentrations of 1.2 %, 1.6 % and 2.7 % were investigated. In DLTS and LDLTS spectra of the samples, four predominant electron traps were observed. On the basis of the obtained electrical parameters and previously published results, one of the traps was associated with N-r

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Simon, Ágnes, Csaba Magyar, László Héja, and Julianna Kardos. "Peptide Binding Sites of Connexin Proteins." Chemistry 2, no. 3 (2020): 662–73. http://dx.doi.org/10.3390/chemistry2030042.

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Intercellular gap junction (GJ) contacts formed by the coupling of connexin (Cx) hemichannels (HCs) embedded into the plasma membranes of neighboring cells play significant role in the development, signaling and malfunctions of mammalian tissues. Understanding and targeting GJ functions, however, calls for finding valid Cx subtype-specific inhibitors. We conjecture the lack of information about binding interactions between the GJ interface forming extracellular EL1 and EL2 loops and peptide mimetics designed to specifically inhibit Cx43HC coupling to Cx43GJ. Here, we explore active spots at th

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Betti, Michele, Valentina Bonora, Luciano Galano, Eugenio Pellis, Grazia Tucci, and Andrea Vignoli. "An Integrated Geometric and Material Survey for the Conservation of Heritage Masonry Structures." Heritage 4, no. 2 (2021): 585–611. http://dx.doi.org/10.3390/heritage4020035.

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This paper reports the knowledge process and the analyses performed to assess the seismic behavior of a heritage masonry building. The case study is a three-story masonry building that was the house of the Renaissance architect and painter Giorgio Vasari (the Vasari’s House museum). An interdisciplinary approach was adopted, following the Italian “Guidelines for the assessment and mitigation of the seismic risk of the cultural heritage”. This document proposes a methodology of investigation and analysis based on three evaluation levels (EL1, analysis at territorial level; EL2, local analysis a

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He, Dao-Yao, Yoshiaki Yazaki, Yoko Nishizawa, et al. "Gene Activation by Cytoplasmic Acidification in Suspension-Cultured Rice Cells in Response to the Potent Elicitor, N-Acetylchitoheptaose." Molecular Plant-Microbe Interactions® 11, no. 12 (1998): 1167–74. http://dx.doi.org/10.1094/mpmi.1998.11.12.1167.

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N-Acetylchitoheptaose strongly induces a set of defense reactions in suspension-cultured rice cells including cytoplasmic acidification (K. Kuchitsu, Y. Yazaki, K. Sakano, and N. Shibuya, Plant Cell Physiol. 38:1012-1018, 1997) and the accumulation of mRNAs for two rapidly activated genes, EL2 and EL3 (E. Minami, K. Kuchitsu, D.-Y. He, H. Kouchi, N. Midoh, Y. Ohtsuki, and N. Shibuya, Plant Cell Physiol. 37:563-567, 1996), as well as phenylalanine ammonia-lyase (PAL), chitinase and β-1,3-glucanase. Treatment of cells with propionic acid resulted in the accumulation of the mRNAs for EL2, EL3, an

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Egli, C. M., C. Springer, and G. H. Braus. "A complex unidirectional signal element mediates GCN4 mRNA 3' end formation in Saccharomyces cerevisiae." Molecular and Cellular Biology 15, no. 5 (1995): 2466–73. http://dx.doi.org/10.1128/mcb.15.5.2466.

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The yeast GCN4 3' element represents a class of polyadenylation sites which function unidirectionally and efficiently in test systems in vivo as well as in vitro. A complex signal element is required for polyadenylation activity with a minimal size of 116 nucleotides for the functional element. We subdivided this element into five regions (EL1 to EL5) of 16 to 26 nucleotides each. Each region was characterized by deletion analysis in an in vivo test system. Two TTTTTAT motifs are located in different regions (EL1 and EL4) upstream of the poly(A) site. The 3' end processing activity was signifi

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Dissertations / Theses on the topic "EL2"

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Roca, Marín Santiago. "Análisis de la organización y enseñanza de EL2 en Alicante: Programas de Compensatoria y PASE (2003-2008)." Doctoral thesis, Universidad de Alicante, 2016. http://hdl.handle.net/10045/59768.

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Perez, Canizares Pilar, and Johannes Schnitzer. "El uso de herramientas lexicográficas ante problemas terminológicos: estrategias de profesores y estudiantes de ELE/EL2." Taylor & Francis Group, 2019. http://epub.wu.ac.at/6983/1/23247797.2019.pdf.

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Con el objetivo de contribuir al desarrollo de las estrategias de búsqueda lexicográfica de los estudiantes de español LE/L2, se realizó un estudio empírico para averiguar el uso concreto de recursos lexicográficos por parte tanto de profesores como de estudiantes. Con tal finalidad se observaron y anotaron los recursos usados, el orden de consulta y también las estrategias aplicadas por ambos grupos al realizar una traducción técnica del alemán al español. El análisis de los datos revela que existen pocas diferencias entre las estrategias de ambos grupos de usuarios: si bien los estud

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Moritz, Maria Ester Wollstein. "A contrastive genre study of conclusions as components of research articles across PL1, EL1 and EL2." Florianópolis, SC, 2006. http://repositorio.ufsc.br/xmlui/handle/123456789/89001.

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Tese (doutorado) - Universidade Federal de Santa Catarina, Centro de Comunicação e Expressão. Programa de Pós-Graduação em Letras/Inglês e Literatura Correspondente<br>Made available in DSpace on 2012-10-22T15:44:03Z (GMT). No. of bitstreams: 0<br>One line of research in the area of genre analysis prevailing in the last 25 years has concentrated on the study of rhetorical patterns of organization of research articles (RAs). The present study is a contrastive investigation which advances this research by focusing on the macro and micro-structural organization of conclusions of RAs written in Po

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Dobrilla, Paolo. "Infrared transmittance study of GaAs : Mapping stress, dislocation, and EL2 distributions /." Full text open access at:, 1986. http://content.ohsu.edu/u?/etd,100.

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Disdier, Laurent. "Non-linearites optiques resultant de l'excitation du defaut natif el2 dans GaAs." Phd thesis, Université Paris Sud - Paris XI, 1990. http://pastel.archives-ouvertes.fr/pastel-00713982.

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Les non-linearites de l'arséniure de gallium (gaas) sont étudies a la longueur d'onde 1,06 micron en regime nanoseconde et picoseconde. En régime nanoseconde, les porteurs libres (electrons et trous) sont crees par photoionisation des centres profonds el2. Ils provoquent une variation de permittivite du milieu tandis que l'évolution des densités de centres neutres et ionises change principalement l'absorption. L'etude de la réflectivité par une expérience de conjugaison de phase montre qu'un troisieme effet doit être pris en compte pour de forte énergie, le mouvement non-lineaire des electrons

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DISDIER, LAURENT. "Non-linearites optiques resultant de l'excitation du defaut natif el2 dans gaas." Paris 11, 1990. http://www.theses.fr/1990PA112309.

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Les non-linearites de l'arseniure de gallium (gaas) sont etudiees a la longueur d'onde 1,06 micron en regime nanoseconde et picoseconde. En regime nanoseconde, les porteurs libres (electrons et trous) sont crees par photoionisation des centres profonds el2. Ils provoquent une variation de permittivite du milieu tandis que l'evolution des densites de centres neutres et ionises change principalement l'absorption. L'etude de la reflectivite par une experience de conjugaison de phase montre qu'un troisieme effet doit etre pris en compte pour de forte energie, le mouvement non-lineaire des electron

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Reichel, Carsten. "Nachweis mesoskopischer elektrischer Inhomogenitäten in undotiertem GaAs mittels Punktkontakt-Verfahren." Doctoral thesis, Technische Universitaet Bergakademie Freiberg Universitaetsbibliothek "Georgius Agricola&quot, 2009. http://nbn-resolving.de/urn:nbn:de:swb:105-2480790.

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Zur Charakterisierung mesoskopischer elektrischer Inhomogenitäten in undotiertem GaAs, die meist eine zellulare Struktur mit hochohmigen Zellzentren und niederohmigen Zellwänden aufweisen, wurde die Punktkontakt-Technik weiterentwickelt, mit der hochaufgelöste und quantitative Widerstandsmessungen möglich sind. Untersuchungen der I-U-Kennlinie des Punktkontakts zeigten, dass sich letzterer näherungsweise durch einen Schottkykontakt mit hohem Serienwiderstand beschreiben lässt. Eine Kalibrierung des Punktkontakt-Stromes (IPC) lieferte für Widerstände &gt; 1E6 Ohmcm eine inverse Proportional

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Steinegger, Thomas. "Defect Engineering." Doctoral thesis, Technische Universitaet Bergakademie Freiberg Universitaetsbibliothek "Georgius Agricola&quot, 2009. http://nbn-resolving.de/urn:nbn:de:swb:105-8973489.

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Die Kenntnisse über die zur Passivierung führenden Wechselwirkungen des Verunreinigungselements Cu mit EL2 und EL6 wurden dahingehend erweitert, dass ein Gültigkeitsbereich für die Messungen zur Bestimmung der konzentrationsproportionalen Messgröße der Defekte festgelegt wurde. Der Defekt EL6 ist das die 0.8 eV-PL-Emission bedingende und die Ladungsträgerlebensdauer determinierende Rekombinationszentrum. Die Lebensdauer wird durch mindestens ein weiteres Zentrum beeinflusst. Die atomare Struktur des EL6 wurde mit AsGa VAs und die des weiteren Zentrums mit Asi bestimmt. Mittels Wärmebehandlung

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Ben, Cherifa Ali. "Contribution à l'étude des défauts d'irradiation et du centre profond EL2 dans GaAs et GaAlAs par spectroscopie capacitive." Grenoble 2 : ANRT, 1988. http://catalogue.bnf.fr/ark:/12148/cb376117869.

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Ben, Cherifa Ali. "Contribution à l’étude des défauts d'irradiation et du centre profond EL2 dans GaAs et GaAlAs par spectroscopie capacitive." Lyon, INSA, 1988. http://www.theses.fr/1988ISAL0017.

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Le mécanisme de compensation des substrats AsGa est basé sur l'existence d'un défaut profond intrinsèque EL2 de type donneur qui compense les accepteurs légers résiduels. Sa nature microscopique exacte n'était pas bien connue au début de notre étude. Nous nous sommes proposés donc d'apporter une contribution importante à son identification et à la connaissance de ses propriétés dans GaAs n et p et dans Gal-x Al As. Dans ce but, nous avons tenté de le créer artificiellement Nous avons également étudié les défauts profonds dans les matériaux GaAs type p. Les techniques capacitives de caractérisa

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Books on the topic "EL2"

1

Nicholls, Michael P. D. Measurement of EL2 and carbon concentrations in semi-insulating GaAs. UMIST, 1997.

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Eli, Ely. HardHead Communications, 2013.

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1936-, Sargent Pat, and Huff Jeane ill, eds. Eli the elk. Ozark Pub., 1998.

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Escandell, Ramón Baldaquí. Els Soler de Cornellà a Elx en el segle XVIII. Ajuntament d'Elx, 1993.

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ill, Anderson Philip S., ed. Eli the elf: A Christmas story for children of all ages. August House, 1993.

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Elu pärast elu. Allika, 2011.

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Encarnación, José Antonio Miranda. Els anys més difícils: Elx i la indústria Espanyola del Calçat durant l'autarquia. Ajuntament d'Elx, 1995.

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Wells, Gail. Elk. Oregon Forest Resources Institute, 2007.

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Cox, Daniel J. Elk. Chronicle Books, 1992.

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Myers, Bill. Eli. Zondervan, 2002.

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Book chapters on the topic "EL2"

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Roca Marín, Santiago. "Denominal verbs in Ele/El2 classroom (a didactic approach)." In Spanish Word Formation and Lexical Creation. John Benjamins Publishing Company, 2011. http://dx.doi.org/10.1075/ivitra.1.19mar.

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Kaminska, Maria. "Defect Identification: EL2 in GaAs." In Proceedings of the 17th International Conference on the Physics of Semiconductors. Springer New York, 1985. http://dx.doi.org/10.1007/978-1-4615-7682-2_165.

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Omling, P., L. Samuelson, and H. G. Grimmeiss. "EL2 in GaAs — Re-Evaluation of Optical Data." In Proceedings of the 17th International Conference on the Physics of Semiconductors. Springer New York, 1985. http://dx.doi.org/10.1007/978-1-4615-7682-2_167.

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Illés, Éva. "Towards an ELF-Informed Approach to ELT." In Understanding Context in Language Use and Teaching. Routledge, 2020. http://dx.doi.org/10.4324/9780429274589-7.

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Illés, Éva. "Implementation of an ELF-Informed Approach to ELT." In Understanding Context in Language Use and Teaching. Routledge, 2020. http://dx.doi.org/10.4324/9780429274589-8.

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Hovhannisyan, Gayane R. "Incorporating Intercultural Research into ELL/ELT in Oman." In English Education in Oman. Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-13-0265-7_6.

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Eisenberg, Florian. "elf." In Kanban – mehr als Zettel. Carl Hanser Verlag GmbH & Co. KG, 2018. http://dx.doi.org/10.3139/9783446457164.011.

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Rots, Hanne. "Elf." In Jij mág niet lief zijn. Bohn Stafleu van Loghum, 2004. http://dx.doi.org/10.1007/978-90-313-9257-5_11.

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Inai, Kei, Alexander K. C. Leung, Jouni Uitto, et al. "EA2." In Encyclopedia of Molecular Mechanisms of Disease. Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-540-29676-8_8448.

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Charman, Tony, Susan Hepburn, Moira Lewis, et al. "ELS." In Encyclopedia of Autism Spectrum Disorders. Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4419-1698-3_100522.

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Conference papers on the topic "EL2"

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Shi, Wei, Rui Liu, and Jing-li Wang. "Effects of EL2 deep level in GaAs photoconductive switch." In International Symposium on Photoelectronic Detection and Imaging 2009, edited by X. C. Zhang, James M. Ryan, Cun-lin Zhang, and Chuan-xiang Tang. SPIE, 2009. http://dx.doi.org/10.1117/12.835228.

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Sudzius, Markas, L. Bastiene, and Kestutis Jarasiunas. "Optical nonlinearities in GaAs at EL2 quenching by short laser pulses." In International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, edited by Sergey V. Svechnikov and Mikhail Y. Valakh. SPIE, 1995. http://dx.doi.org/10.1117/12.226172.

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Labranche, B., M. Levesque, M. Morin, et al. "Side-Pumped Eyesafe Laser." In Advanced Solid State Lasers. OSA, 2004. http://dx.doi.org/10.1364/assl.1994.el2.

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Pugnet, Michel, Jacques H. Collet, and Laurent Nardo. "Photocurrent response to picosecond pulses in semiconductors: application to EL2 in gallium arsenide." In Physical Concepts of Materials for Novel Optoelectronic Device Applications, edited by Manijeh Razeghi. SPIE, 1991. http://dx.doi.org/10.1117/12.24390.

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Disdier, Laurent, and Gerald Roosen. "Dynamic grating generated from EL2 level in semi-insulating GaAs by nanosecond pulses." In The Hague '90, 12-16 April, edited by Peter Guenter. SPIE, 1990. http://dx.doi.org/10.1117/12.20460.

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Alt, H. Ch, and G. Packeiser. "Two-Dimensional High-Resolution EL2 Topography in Thin Semi-Insulating LEC-Grown GaAs Wafers." In 1986 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1986. http://dx.doi.org/10.7567/ssdm.1986.d-8-2.

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Vezzoli, G. C., Terence Burke, M. Weiner, S. Levy, and B. Lalevic. "High Field Conductance And Hall Study Under Illumination Of EL2 Defect In Semi-Insulating GaAs." In O-E/Fiber LASE '88, edited by Mark A. Mentzer. SPIE, 1988. http://dx.doi.org/10.1117/12.960089.

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Isei-Jaakkola, Toshiko, Takatoshi Naka, and Keikichi Hirose. "Problems encountered by Japanese EL2 with English short vowels as illustrated on a 3d vowel chart." In Interspeech 2011. ISCA, 2011. http://dx.doi.org/10.21437/interspeech.2011-486.

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Isei-Jaakkola, Toshiko, and Keiko Ochi. "Frequency and durational comparisons of pauses in reading two short stories by Japanese L1 and EL2 and English L1." In ISAPh 2018 International Symposium on Applied Phonetics. ISCA, 2018. http://dx.doi.org/10.21437/isaph.2018-12.

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Ikari, T., Y. Tabuchi, A. Fukuyama, K. Yoshino, and K. Maeda. "Thermal recovery from the metastable state of deep lying defect level EL2 in GaAs investigated by piezoelectric photoacoustic technique." In PHOTOACOUSTIC AND PHOTOTHERMAL PHENOMENA. ASCE, 1999. http://dx.doi.org/10.1063/1.58057.

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Reports on the topic "EL2"

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Mejía Torres, Lina María, and Mauricio Jaramillo-Jassir. El abecé de la beligerancia y su aplicabilidad con el ELN. Génesis y desafíos inmediatos. Universidad del Rosario, 2021. http://dx.doi.org/10.12804/issne.2745-2085_10336.31360_sddtf.

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Gustin, Santiago. Differences in Syntactic Complexity in the Writing of EL1 and ELL Civil Engineering Students. Portland State University Library, 2000. http://dx.doi.org/10.15760/etd.7008.

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Santacana Mestre, Joan, and Nayra Llonch Molina. Els Vilars d’Arbeca i el seu model de socialització del coneixement. Edicions de la Universitat de Lleida, 2018. http://dx.doi.org/10.21001/rap.2018.28.13.

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Ruiz Rodríguez, Arturo. Historias paralelas: la fortaleza de Els Vilars y el oppidum de Puente Tablas. Edicions de la Universitat de Lleida, 2018. http://dx.doi.org/10.21001/rap.2018.28.12.

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Rodriguez, Tatiana Isabel. Measurement of the Standard Model $ZZ$ Cross-Section in the $ZZ \to \ell\ell\ell\ell$ Channel. Office of Scientific and Technical Information (OSTI), 2011. http://dx.doi.org/10.2172/1128076.

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Aubert, B. Search for B {yields} K{ell}{sup +}{ell}{sup -} and B {yields} K*(892){ell}{sup +}{ell}{sup -}. Office of Scientific and Technical Information (OSTI), 2004. http://dx.doi.org/10.2172/826703.

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Barger, Jack H., Richard W. Hall, Alden M. Townsend, and Alden M. Townsend. Elm leaf beetle performance on ozone-fumigated elm. U.S. Department of Agriculture, Forest Service, North Central Research Station, 1992. http://dx.doi.org/10.2737/ne-rp-661.

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Aubert, B. Search for Lepton Flavor Violation in tau{sup -} to ell{sup -} ell{sup +} ell{sup -}. Office of Scientific and Technical Information (OSTI), 2003. http://dx.doi.org/10.2172/826586.

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Gleason, Mark L., and Jean C. Batzer. National Elm Trial. Iowa State University, Digital Repository, 2010. http://dx.doi.org/10.31274/farmprogressreports-180814-871.

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Batzer, Jean C., and Mark L. Gleason. National Elm Trial. Iowa State University, Digital Repository, 2013. http://dx.doi.org/10.31274/farmprogressreports-180814-2795.

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