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Journal articles on the topic 'ELDRS'

Author: Grafiati

Published: 4 June 2021

Last updated: 7 February 2022

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1

Turflinger, T. L., A. B. Campbell, W. M. Schmeichel, R. J. Walters, J. F. Krieg, J. L. Titus, M. Reeves, P. W. Marshall, and R. L. Pease. "Eldrs in space: an updated and expanded analysis of the bipolar eldrs experiment on mptb." IEEE Transactions on Nuclear Science 50, no. 6 (December 2003): 2328–34. http://dx.doi.org/10.1109/tns.2003.820772.

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2

Pershenkov, V. S., A. S. Bakerenkov, A. T. Yastrebov, A. V. Solomatin, V. V. Belyakov, and V. V. Shurenkov. "Using Low Temperature Irradiation for ELDRS Estimation." Advanced Materials Research 1016 (August 2014): 484–89. http://dx.doi.org/10.4028/www.scientific.net/amr.1016.484.

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The technique for low dose rate response prediction, based on the combination of low, room and elevated temperature irradiation was described. The possibility of using Test Method 1019.8 for space applications was considered.

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3

Pease, Ronald L., Ronald D. Schrimpf, and Daniel M. Fleetwood. "ELDRS in Bipolar Linear Circuits: A Review." IEEE Transactions on Nuclear Science 56, no. 4 (August 2009): 1894–908. http://dx.doi.org/10.1109/tns.2008.2011485.

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4

Farragher, Barbara, Margo Wrigley, Orla Donohoe, and Joseph Duggan. "Screening for depression in hospitalised elderly medical patients." Irish Journal of Psychological Medicine 13, no. 4 (December 1996): 144–47. http://dx.doi.org/10.1017/s0790966700004407.

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AbstractObjective: The aim of this study was to screen a group of medically ill elderly hospitalised patients for depression and to facilitate this using a new screening questionnaire called the Evans Liverpool Depression Rating Scale (ELDRS).Method: The questionnaire was administered by a geriatric registrar to a consecutive series of 37 acutely ill elderly medical inpatients admitted to an acute hospital ward. They were subsequently interviewed by a member of the psychiatry of old age team.Results: Seven of the 37 acutely ill elderly patients admitted to hospital were found to be suffering from a major depressive illness according to DSMIIIR criteria. Of the patients screened, two were already on antidepressant medication. Five of the depressed patients were identified by using the ELDRS. All of the depressed group were judged to require antidepressant medication and two were referred to a psychiatry of old age day hospital.Conclusions: Our results suggest that there is a raised prevalence of depressive illness in elderly acutely ill medical patients which remains undetected. Use of a screening questionnaire such as the ELDRS would increase the likelihood of its identification in this group.

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5

Pershenkov, V. S., A. S. Bakerenkov, A. T. Yastrebov, A. V. Solomatin, V. V. Belyakov, and V. V. Shurenkov. "Effect of Radiation Induced Charge Neutralization on ELDRS." Advanced Materials Research 1016 (August 2014): 478–83. http://dx.doi.org/10.4028/www.scientific.net/amr.1016.478.

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The physical model, procedure of fitting parameter extraction and experimental study of the contribution of radiation induced charge neutralization (RICN) effect on enhanced low dose rate sensitivity (ELDRS) of bipolar devices are presented.

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6

Pershenkov, V. S., D. V. Savchenkov, and V. A. Telets. "ELDRS in a wide range of total doses." IOP Conference Series: Materials Science and Engineering 151 (October 2016): 012008. http://dx.doi.org/10.1088/1757-899x/151/1/012008.

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7

Li, Pei, Chaohui He, Hongxia Guo, Qi Guo, Jinxin Zhang, and Mohan Liu. "An Investigation of ELDRS in Different SiGe Processes." IEEE Transactions on Nuclear Science 64, no. 5 (May 2017): 1137–41. http://dx.doi.org/10.1109/tns.2017.2686429.

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8

Pershenkov, Vyacheslav, Alexander Bakerenkov, Alexander Rodin, Vladislav Felitsyn, Alexander Zhukov, Vitaly Telets, and Vladimir Belyakov. "Enhanced low dose rate sensitivity (ELDRS) and reduced low dose rate sensitivity (RLDRS) in bipolar devices." Facta universitatis - series: Electronics and Energetics 33, no. 2 (2020): 303–16. http://dx.doi.org/10.2298/fuee2002303p.

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Possible physical mechanism of enhanced low dose rate sensitivity (ELDRS) and reduced low dose rate sensitivity (RLDRS) in bipolar devices is described. Modification of the low dose rate conversion model is presented. The enhanced or reduced sensitivity can be connected with a specific position of the effective Fermi level relatively acceptor and donor radiation-induced interface traps. The qualitative and quantitative analysis of the low dose rate effects is presented. The effect of the oxide trapped charge on the value of the oxide electric field and the yield of the oxide charge were taken into account. It leads to dependence of the accumulation of radiation induced oxide charge and interface traps on the dose rate. In enhancement version the ELDRS and RLDRS conversion model describes the low dose rate effect in as ?true? dose rate effect.

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9

Boch, J., A. Michez, M. Rousselet, S. Dhombres, A. D. Touboul, J. R. Vaille, L. Dusseau, et al. "Dose Rate Switching Technique on_newline ELDRS-Free Bipolar Devices." IEEE Transactions on Nuclear Science 63, no. 4 (August 2016): 2065–71. http://dx.doi.org/10.1109/tns.2015.2512620.

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10

Boch, J., Y. Gonzalez Velo, F. Saigne, N. J. H. Roche, S. Perez, R. D. Schrimpf, J. R. Vaille, et al. "ELDRS: Optimization Tools for the Switched Dose Rate Technique." IEEE Transactions on Nuclear Science 58, no. 6 (December 2011): 2998–3003. http://dx.doi.org/10.1109/tns.2011.2171003.

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11

Yu-Zhan, Zheng, Lu Wu, Ren Di-Yuan, Wang Gai-Li, Yu Xue-Feng, and Guo Qi. "ELDRS and dose-rate dependence of vertical NPN transistor." Chinese Physics C 33, no. 1 (January 2009): 47–49. http://dx.doi.org/10.1088/1674-1137/33/1/010.

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12

Mrozovskaya, Elizaveta V., Petr A. Zimin, Pavel A. Chubunov, Gennady I. Zebrev, and Vladimir M. Maslovsky. "SIMULATION OF ANNEALING AND THE ELDRS IN p-MNOS RadFETs." High Temperature Material Processes An International Quarterly of High-Technology Plasma Processes 23, no. 4 (2019): 313–18. http://dx.doi.org/10.1615/hightempmatproc.2019031964.

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13

Pershenkov, V. S., A. S. Bakerenkov, V. A. Felitsyn, A. S. Rodin, V. A. Telets, and V. V. Belyakov. "ELDRS in SiGe transistors for room and low-temperature irradiation." Microelectronics Reliability 63 (August 2016): 56–59. http://dx.doi.org/10.1016/j.microrel.2016.05.010.

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14

Nowlin, R. N., R. L. Pease, D. G. Platteter, G. W. Dunham, and J. E. Seiler. "Evaluating TM1019.6 ELDRS screening methods using gated lateral PNP transistors." IEEE Transactions on Nuclear Science 52, no. 6 (December 2005): 2609–15. http://dx.doi.org/10.1109/tns.2005.860710.

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15

Fragopoulou, M., M. Zamani, S. Siskos, T. Laopoulos, V. Konstantakos, and G. Sarrabayrouse. "A Study of the Response of Depleted Type p-MOSFETs to Electron Doses." HNPS Proceedings 24 (April 1, 2019): 153. http://dx.doi.org/10.12681/hnps.1859.

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A study of depleted pMOSFETs characteristics performed with electrons, at energies ranging from 6 to 15 MeV delivered by Linac medical accelerator. The depleted pMOSFETs present high sensitivity to electron doses. Linear threshold voltage shift with dose was measured for all the electron’s energies studied. A small decrease of the response was observed with dose rate during irradiations which can be attributed to ELDRS effects.

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16

Pershenkov, V. S., A. S. Petrov, A. S. Bakerenkov, V. N. Ulimov, V. A. Felytsyn, A. S. Rodin, V. V. Belyakov, V. A. Telets, and V. V. Shurenkov. "True dose rate physical mechanism of ELDRS effect in bipolar devices." Microelectronics Reliability 76-77 (September 2017): 703–7. http://dx.doi.org/10.1016/j.microrel.2017.07.025.

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17

Li, Xiaolong, Wu Lu, Xin Wang, Qi Guo, Xin Yu, Chengfa He, Jing Sun, Mohan Liu, Shuai Yao, and Xinyu Wei. "Using temperature-switching approach to evaluate the ELDRS of bipolar devices." Radiation Effects and Defects in Solids 172, no. 11-12 (December 2, 2017): 824–34. http://dx.doi.org/10.1080/10420150.2017.1411354.

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18

Shaneyfelt, M. R., R. L. Pease, M. C. Maher, J. R. Schwank, S. Gupta, P. E. Dodd, and L. C. Riewe. "Passivation layers for reduced total dose effects and eldrs in linear bipolar devices." IEEE Transactions on Nuclear Science 50, no. 6 (December 2003): 1784–90. http://dx.doi.org/10.1109/tns.2003.820771.

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19

Titus, J. L., D. Emily, J. F. Krieg, T. Turflinger, R. L. Pease, and A. Campbell. "Enhanced low dose rate sensitivity (ELDRS) of linear circuits in a space environment." IEEE Transactions on Nuclear Science 46, no. 6 (1999): 1608–15. http://dx.doi.org/10.1109/23.819128.

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20

Li, Xiaolong, Wu Lu, Qi Guo, Daniel M. Fleetwood, Chengfa He, Xin Wang, Xin Yu, Jing Sun, Mohan Liu, and Shuai Yao. "Temperature-Switching During Irradiation as a Test for ELDRS in Linear Bipolar Devices." IEEE Transactions on Nuclear Science 66, no. 1 (January 2019): 199–206. http://dx.doi.org/10.1109/tns.2018.2879383.

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21

Gonzalez-Velo, Yago, Jérôme Boch, Frédéric Saigne, Nicolas J. H. Roche, Stephanie Perez, Jean-Roch Vaille, Christelle Deneau, et al. "Evaluation of ELDRS Mechanisms Using Dose Rate Switching Experiments on Gated Lateral PNP Transistors." IEEE Transactions on Nuclear Science 58, no. 6 (December 2011): 2953–60. http://dx.doi.org/10.1109/tns.2011.2170707.

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22

Hu, W., Y. Q. Zhuang, J. L. Bao, and Q. F. Zhao. "Effects of radiation-induced change in 1/f noise and ELDRS of the NPN transistors." Materials Research Innovations 19, sup6 (June 2015): S6–50—S6–53. http://dx.doi.org/10.1179/1432891715z.0000000001445.

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23

Galloway, K. F., R. L. Pease, R. D. Schrimpf, and D. W. Emily. "From Displacement Damage to ELDRS: Fifty Years of Bipolar Transistor Radiation Effects at the NSREC." IEEE Transactions on Nuclear Science 60, no. 3 (June 2013): 1731–39. http://dx.doi.org/10.1109/tns.2013.2244615.

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24

Pease, R. L., D. G. Platteter, G. W. Dunham, J. E. Seiler, H. J. Barnaby, R. D. Schrimpf, M. R. Shaneyfelt, M. C. Maher, and R. N. Nowlin. "Characterization of enhanced low dose rate sensitivity (ELDRS) effects using Gated Lateral PNP transistor structures." IEEE Transactions on Nuclear Science 51, no. 6 (December 2004): 3773–80. http://dx.doi.org/10.1109/tns.2004.839258.

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25

Pease, Ronald L., Philippe Claude Adell, Bernard G. Rax, Xiao Jie Chen, Hugh J. Barnaby, Keith E. Holbert, and Harold P. Hjalmarson. "The Effects of Hydrogen on the Enhanced Low Dose Rate Sensitivity (ELDRS) of Bipolar Linear Circuits." IEEE Transactions on Nuclear Science 55, no. 6 (December 2008): 3169–73. http://dx.doi.org/10.1109/tns.2008.2006478.

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26

Lu, Wu, Yu-Zhan Zheng, Yi-Yuan Wang, Di-Yuan Ren, Qi Guo, Zhi-Kuan Wang, and Jian-An Wang. "Effects of orientation of substrate on the enhanced low-dose-rate sensitivity (ELDRS) in NPN transistors." Chinese Physics C 35, no. 2 (February 2011): 169–73. http://dx.doi.org/10.1088/1674-1137/35/2/012.

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27

Александров, О. В. "Влияние интенсивности ионизирующего облучения на отклик МОП-структур." Физика и техника полупроводников 55, no. 2 (2021): 152. http://dx.doi.org/10.21883/ftp.2021.02.50502.9533.

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Проведено моделирование влияния интенсивности ионизирующего облучения на объемный заряд и плотность поверхностных состояний МОП-структур с тонким подзатворным диоксидом кремния. Показано, что зависимости плотности поверхностных состояний и объемного заряда от суммарного времени ионизирующего облучения и последующей выдержки при разных интенсивностях ионизирующего облучения ложатся на соответствующие общие кривые Nit(t) и Qot(t). Общая кривая Nit(t) обусловлена дисперсионным характером транспорта ионов водорода H+. Наблюдаемые отклонения от общей кривой Nit(t) непосредственно после окончания ионизирующего облучения связаны с переходным процессом перераспределения ионов H+. Общая кривая Qot(t) обусловлена релаксацией объемного заряда по механизму термоэмиссии с системы уровней с энергиями 0.3-1.0 эВ. Показано, что повышенная чувствительность к малым дозам ионизирующего облучения (ELDRS) МОП-структур с толстым базовым оксидом при низких интенсивностях определяется дисперсионным характером транспорта ионов H+. Ключевые слова: ионизирующее облучение, МОП-структура, поверхностные состояния, объемный заряд, дисперсионный транспорт, моделирование.

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28

Pease, R. L., M. Gehlhausen, J. Krieg, J. Titus, T. Turflinger, D. Emily, and L. Cohn. "Evaluation of proposed hardness assurance method for bipolar linear circuits with enhanced low dose rate sensitivity (ELDRS)." IEEE Transactions on Nuclear Science 45, no. 6 (1998): 2665–72. http://dx.doi.org/10.1109/23.736512.

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29

Titus, J. L., W. E. Combs, T. L. Turflinger, J. F. Krieg, H. J. Tausch, D. B. Brown, R. L. Pease, and A. B. Campbell. "First observations of enhanced low dose rate sensitivity (ELDRS) in space: One part of the MPTB experiment." IEEE Transactions on Nuclear Science 45, no. 6 (1998): 2673–80. http://dx.doi.org/10.1109/23.736514.

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30

BARNABY, H. J. "TOTAL DOSE EFFECTS IN LINEAR BIPOLAR INTEGRATED CIRCUITS." International Journal of High Speed Electronics and Systems 14, no. 02 (June 2004): 519–41. http://dx.doi.org/10.1142/s0129156404002491.

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Electronics systems that operate in space or strategic environments can be severely damaged by exposure to ionizing radiation. Space-based systems that utilize linear bipolar integrated circuits are particularly susceptible to radiation-induced damage because of the enhanced sensitivity of these circuits to the low rate of radiation exposure. The phenomenon of enhanced low-dose-rate sensitivity (ELDRS) demonstrates the need for a comprehensive understanding of the mechanisms of total dose effects in linear bipolar circuits. The majority of detailed bipolar total dose studies to date have focused on radiation effects mechanisms at either the process or transistor level. The goal of this text is to provide an overview of total dose mechanisms from the circuit perspective; in particular, the effects of transistor gain degradation on specific linear bipolar circuit parameters and the effects of circuit parameter degradation on select linear bipolar circuit applications.

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31

Ullán, M., M. Wilder, H. Spieler, E. Spencer, S. Rescia, F. M. Newcomer, F. Martinez-McKinney, W. Kononenko, A. A. Grillo, and S. Díez. "Enhanced Low Dose Rate Sensitivity (ELDRS) tests on advanced SiGe bipolar transistors for very high total dose applications." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 724 (October 2013): 41–46. http://dx.doi.org/10.1016/j.nima.2013.04.088.

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32

Rowsey, Nicole L., Mark E. Law, Ronald D. Schrimpf, Daniel M. Fleetwood, Blair R. Tuttle, and Sokrates T. Pantelides. "A Quantitative Model for ELDRS and ${\rm H}_{2}$ Degradation Effects in Irradiated Oxides Based on First Principles Calculations." IEEE Transactions on Nuclear Science 58, no. 6 (December 2011): 2937–44. http://dx.doi.org/10.1109/tns.2011.2169458.

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33

Krieg, J. F., J. L. Titus, D. Emily, M. Gehlhausen, J. Swonger, and D. Platteter. "Enhanced low dose rate sensitivity (ELDRS) in a voltage comparator which only utilizes complementary vertical NPN and PNP transistors." IEEE Transactions on Nuclear Science 46, no. 6 (1999): 1616–19. http://dx.doi.org/10.1109/23.819129.

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34

Adell, P. C., I. S. Esqueda, H. J. Barnaby, B. Rax, and A. H. Johnston. "Impact of Low Temperatures $({< 125}~{\rm K})$ on the Total Ionizing Dose Response and ELDRS in Gated Lateral PNP BJTs." IEEE Transactions on Nuclear Science 59, no. 6 (December 2012): 3081–86. http://dx.doi.org/10.1109/tns.2012.2224372.

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35

RASHKEEV, S. N., D. M. FLEETWOOD, R. D. SCHRIMPF, and S. T. PANTELIDES. "HYDROGEN AT THE Si/SiO2 INTERFACE: FROM ATOMIC-SCALE CALCULATIONS TO ENGINEERING MODELS." International Journal of High Speed Electronics and Systems 14, no. 02 (June 2004): 575–80. http://dx.doi.org/10.1142/s0129156404002521.

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Two contrasting behaviors have been observed for H in Si / SiO 2 structures: a) Radiation experiments established that protons released in SiO 2 migrate to the Si / SiO 2 interface where they induce new defects; b) For oxides exposed first to high-temperature annealing and then to molecular hydrogen, mobile positive charge believed to be protons can be cycled to and from the interface by reversing the oxide electric field. First-principles density functional calculations identify the atomic-scale mechanisms for the two types of behavior and conditions that are necessary for each. Using the results of the atomic-scale calculations we develop a model for enhanced interface-trap formation at low dose rates due to space charge effects in the base oxides of bipolar devices. We find that the hole trapping in the oxide cannot be responsible for all the Enhanced Low-Dose-Rate Sensitivity (ELDRS) effects in SiO 2, and the contribution of protons is also essential. The dynamics of interface-trap formation are defined by the relation between the proton mobility (transport time of the protons across the oxide) and the time required for positive-charge buildup near the interface due to trapped holes. The analytically estimated and numerically calculated interface-trap densities are found to be in very good agreement with available experimental data.

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36

Liu, Mohan, Wu Lu, Xin Yu, Xin Wang, Xiaolong Li, Shuai Yao, and Qi Guo. "Mechanism of Degradation Rate on the Irradiated Double-Polysilicon Self-Aligned Bipolar Transistor." Electronics 8, no. 6 (June 11, 2019): 657. http://dx.doi.org/10.3390/electronics8060657.

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The latent enhanced low dose rate sensitivity (ELDRS) effect is observed in the double-polysilicon self-aligned (DPSA) technology PNP bipolar junction transistor (BJT) irradiated with a high and low dose rate gamma ray, which is discussed from the perspective of the three-stage degradation rate of the excess base current. The great degradation rate as a result of the high dose irradiation of the first stage is dominantly ascribed to the positive oxide trap charges accumulated during a short irradiation, and then due to the competition between the recombination of electrons and capture of the hole by the traps. It declined sharply into a degradation rate saturated region of the second stage. However, for the low dose rate, the small increase in the degradation rate in the first stage is caused by the holes escaping from the initial recombination and being transported to the interface to form the interface states. Then, the competition between the steadily increasing interfacial trap charge and the continuously annealed shallow level oxide trap charge leads to the stable increase of degradation under low dose irradiation. Finally, in stage three, the increases of the degradation rates for high and low dose irradiation result from the different amounts of the hydrogen molecules generated by the hole reactive with depassiviated Si suspended bonds, which can interact with the deep level defects and release protons, causing an increase of interfacial trap charges with prolonged irradiation.

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37

Yang, Guixia, Kunlin Wu, Jianyong Liu, Dehui Zou, Junjie Li, Yi Lu, Xueyang Lv, Jiayun Xu, Liang Qiao, and Xuqiang Liu. "Enhanced Low-Neutron-Flux Sensitivity Effect in Boron-Doped Silicon." Nanomaterials 10, no. 5 (May 5, 2020): 886. http://dx.doi.org/10.3390/nano10050886.

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Space particle irradiation produces ionization damage and displacement damage in semiconductor devices. The enhanced low dose rate sensitivity (ELDRS) effect caused by ionization damage has attracted wide attention. However, the enhanced low-particle-flux sensitivity effect and its induction mechanism by displacement damage are controversial. In this paper, the enhanced low-neutron-flux sensitivity (ELNFS) effect in Boron-doped silicon and the relationship between the ELNFS effect and doping concentration are further explored. Boron-doped silicon is sensitive to neutron flux and ELNFS effect could be greatly reduced by increasing the doping concentration in the flux range of 5 × 109–5 × 1010 n cm−2 s−1. The simulation based on the theory of diffusion-limited reactions indicated that the ELNFS in boron-doped silicon might be caused by the difference in the concentration of remaining vacancy-related defects (Vr) under different neutron fluxes. The ELNFS effect in silicon becomes obvious when the (Vr) is close to the boron doping concentration and decreased with the increase in boron doping concentration due to the remaining vacancy-related defects being covered. These conclusions are confirmed by the p+-n-p Si-based bipolar transistors since the ELNFS effect in the low doping silicon increased the reverse leakage of the bipolar transistors and the common-emitter current gain (β) dominated by highly doped silicon remained unchanged with the decrease in the neutron flux. Our work demonstrates that the ELNFS effect in boron-doped silicon can be well explained by noise diagnostic analysis together with electrical methods and simulation, which thus provide the basis for detecting the enhanced low-particle-flux damage effect in other semiconductor materials.

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38

Stefánsdóttir, Elín Greta, and Ingi Rúnar Eðvarðsson. "Eldri starfmenn og yfirfærsla þekkingar í orkufyrirtækjum." Tímarit um viðskipti og efnahagsmál 13, no. 2 (December 15, 2016): 71. http://dx.doi.org/10.24122/tve.a.2016.13.2.4.

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Markmið greinarinnar er að kynna rannsókn á því hvernig íslensk orkufyrirtæki standa að yfirfærslu þekkingar eldri starfsmanna til þeirra yngri áður en þeir fyrrnefndu hætta störfum. Efnið hefur lítið verið rannsakað hér á landi og er rannsókninni ætlað að bæta við fræðilega umfjöllun á sviðinu, auka vitund fyrirtækja um mikilvægi yfirfærslu þekkingar og til að stjórnendur geti nýtt niðurstöðurnar í starfi sínu. Rannsóknin byggðist á hálfstöðluðum viðtölum við 18 verk- og tæknifræðinga og stjórnendur. Helstu niðurstöður eru að íslensk orkufyrirtæki hafa ekki mótað markvissa stefnu um yfirfærslu og varðveislu þekkingar, þó svo að sum þeirra hafi hafið undirbúning hennar. Viðmælendur voru sammála um að besta aðferðin við yfirfærslu þekkingar væri að eldri og yngri starfsemenn ynnu saman að verkefnum. Forsenda þess að þar takist vel til er vilji einstaklinga til að miðla, traust og gott samband á milli eldri og yngri starfsmanns og nálægð hvors við annan. Einnig þurfa stjórnendur að hvetja til miðlunar þekkingar. Helstu hindranirnar við miðlun þekkingar voru tímaskortur, verkefnaálag og skortur á markvissu verklagi. Ekki var mikill munur á viðhorfi eldra og yngra starfsfólks til þeirra þátta sem snúa að yfirfærslu þekkingar.

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39

Torjuul, Kirsti, Silje Birkenes, Gunn Eva S. Myren, and Karin Torvik. "Eldres erfaringer med regelmessig trening i gruppe: Fokusgruppeintervju med eldre over 80 år." Nordic Journal of Nursing Research 35, no. 2 (March 2, 2015): 85–90. http://dx.doi.org/10.1177/0107408315574446.

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Dr.M.Jeyaseelan, Dr M. Jeyaseelan, and G. Prabu G.Prabu. "Family and Marginalisation of Elders." Indian Journal of Applied Research 4, no. 5 (October 1, 2011): 601–3. http://dx.doi.org/10.15373/2249555x/may2014/189.

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M, Hariprasath. "Automated Bathroom Safety System Especially for Elders." International Journal of Trend in Scientific Research and Development Volume-3, Issue-1 (December 31, 2018): 804–8. http://dx.doi.org/10.31142/ijtsrd19058.

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Arnarsson, Atli, Ólöf Guðný Geirsdóttir, Alfons Ramel, Pálmi V. Jónsson, Laufey Steingrímsdóttir, and Inga Þórsdóttir. "Fæðuvenjur og fylgni við blóðþrýsting meðal eldri Íslendinga." Læknablaðið 2012, no. 10 (October 1, 2012): 515–20. http://dx.doi.org/10.17992/lbl.2012.10.455.

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Anthony Hecht. "Elders." Princeton University Library Chronicle 63, no. 1-2 (2002): 194. http://dx.doi.org/10.25290/prinunivlibrchro.63.1-2.0194.

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Gunnlaugsdóttir, Elín, Ársæll Már Arnarsson, and Friðbert Jónasson. "Sjónskerðing og blinda Reykvíkinga 50 ára og eldri - Reykjavíkuraugnrannsóknin." Læknablaðið 2013, no. 03 (March 1, 2013): 123–27. http://dx.doi.org/10.17992/lbl.2013.03.486.

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Höskuldsdóttir, Guðrún Þuríður, Ólöf Guðný Geirsdóttir, Inga Dóra Kristjánsdóttir, Hjördís Jóhannesdóttir, Bára Benediktsdóttir, Bryndís Guðjónsdóttir, Ingibjörg Magnúsdóttir, Sólrún Rúnarsdóttir, and Pálmi V. Jónsson. "Eldra fólk á bráðamóttöku: Íslenskar niðurstöður úr fjölþjóðarannsókn InterRAI." Læknablaðið 2014, no. 01 (January 2, 2014): 19–24. http://dx.doi.org/10.17992/lbl.2014.01.527.

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Anonymous. "Nonmetro Elders Poorer than Metro Elders." Journal of Gerontological Nursing 19, no. 8 (August 1993): 46. http://dx.doi.org/10.3928/0098-9134-19930801-12.

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Pragnya, K. Ranjitha, and J. Krishna Chaitanya. "Wireless Sensor Network based Healthcare Monitoring System for Homely Elders." International Journal of Advances in Engineering & Technology 6, no. 5 (November 1, 2013): 2078–83. http://dx.doi.org/10.7323/ijaet/v6_iss5_14.

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Wendling, Patricia. "More Elders, Super Elders Undergoing Emergent Surgeries." Caring for the Ages 16, no. 10 (October 2015): 7. http://dx.doi.org/10.1016/j.carage.2015.09.007.

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Coles, Robert, and David Levin. "Exemplary Elders." New England Quarterly 63, no. 4 (December 1990): 676. http://dx.doi.org/10.2307/365932.

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. "Kwaliteitsbeleid elders." Huisarts en Wetenschap 44, no. 12 (December 2001): 90. http://dx.doi.org/10.1007/bf03082355.

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