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Journal articles on the topic 'Electric transport properties'

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1

KHVESHCHENKO, D. V. "TRANSPORT PROPERTIES OF ANYONS." International Journal of Modern Physics B 06, no. 17 (1992): 2837–54. http://dx.doi.org/10.1142/s0217979292002267.

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We consider electromagnetic response as well as electrical and thermal transport in a normal state of anyon system at finite temperatures. We find the frequency and momentum dependences of electrical and thermal conductivities in the longwavelength limit. It is also shown that a pole of electric current and stress tensor correlation functions identified at zero temperature with a gapless sound-like mode becomes a diffusion above the critical temperature of the hypothetical superfluid anyon phase transition.
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2

Peng, Gang, Wen Bo Ma, Xiao Kun Huang, et al. "Electrical Transport Properties of Single SiC NW-FET." Advanced Materials Research 704 (June 2013): 281–86. http://dx.doi.org/10.4028/www.scientific.net/amr.704.281.

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A single SiC NW-FET (nanowire field effect transistor) was fabricated by FIB (Focus-Ion-Beam) method and the photo-electric properties of the device including I-V characteristic, transfer characteristic and time response et.al. were studied in this paper. SiC NWs (NWs) were prepared by pyrolysis of a polymer precursor with ferrocene as the catalyst by a CVD route. The NWs were suspended in ethanol by ultrasonic, then sprayed onto a silicon wafer with 300nm silicon oxide. Pt electrodes were deposited directly by FEI NanoLab 600i along with the SiC NW on silicon wafer. The transfer characteristic of the device shows that the SiC NW is a n-type semiconductor and photoelectrical measurements of the device show an rapid change of voltage when applied a constant current and explored the device to 254nm UV light. The mechanism of photo-electric properties are discussed in the last. Our results show that the single SiC NW FET could be applied to a harsh environment due to its own excellent electrical and optical properties.
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3

Huang, S. L., L. X. Guan, J. B. Yi, et al. "Magnetic and electric transport properties of Nd0.75Sr1.25Co1−xMnxO4." Journal of Applied Physics 104, no. 12 (2008): 123904. http://dx.doi.org/10.1063/1.3046673.

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4

Tang, T., C. Tien, R. S. Huang, B. Y. Hou, and S. Y. Zhang. "Magnetic and electric transport properties of polycrystalline manganite Pr0.6Na0.4MnO3." Physica B: Condensed Matter 403, no. 19-20 (2008): 3689–92. http://dx.doi.org/10.1016/j.physb.2008.06.014.

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5

Wu, Cen-Shawn, Yu-Cheng Chang, Weimeng Chen, Chinping Chen, and Qingrong Feng. "Magnetization and electric transport properties of single-crystal MgB2nanowires." Nanotechnology 23, no. 46 (2012): 465706. http://dx.doi.org/10.1088/0957-4484/23/46/465706.

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6

Podlesnyak, A., A. Karkin, K. Conder, E. Pomjakushina, M. Stingaciu, and P. Allenspach. "Magnetic and electric transport properties of TbBaCo2O5.5 single crystal." Journal of Magnetism and Magnetic Materials 316, no. 2 (2007): e710-e712. http://dx.doi.org/10.1016/j.jmmm.2007.03.068.

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7

Rodrigues, Clóves G., Áurea R. Vasconcellos, Roberto Luzzi, and Valder N. Freire. "Nonlinear transport properties of III-nitrides in electric field." Journal of Applied Physics 98, no. 4 (2005): 043702. http://dx.doi.org/10.1063/1.1999024.

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8

Kawahara, T., T. Suzuki, K. Shimura, T. Terashima та Y. Bando. "Electric field effects on transport properties in YBa2Cu3O7−δ". Physica C: Superconductivity 235-240 (грудень 1994): 3363–64. http://dx.doi.org/10.1016/0921-4534(94)91208-4.

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9

Sharma, Indu Bhushan, C. Singh, and D. Singh. "Synthesis, structure, electric transport and magnetic properties of Sr3MnTiO7−." Journal of Alloys and Compounds 375, no. 1-2 (2004): 11–14. http://dx.doi.org/10.1016/j.jallcom.2003.11.139.

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10

Humble, Paul H., John N. Harb, H. Dennis Tolley, Adam T. Woolley, Paul B. Farnsworth, and Milton L. Lee. "Influence of transport properties in electric field gradient focusing." Journal of Chromatography A 1160, no. 1-2 (2007): 311–19. http://dx.doi.org/10.1016/j.chroma.2007.04.013.

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11

CAMPBELL, I. H., and D. L. SMITH. "ELECTRICAL TRANSPORT IN ORGANIC SEMICONDUCTORS." International Journal of High Speed Electronics and Systems 11, no. 02 (2001): 585–615. http://dx.doi.org/10.1142/s0129156401000952.

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Organic semiconductors have processing and performance advantages for low cost and/or large area applications that have led to their rapid commercialization. Organic semiconductors are π conjugated materials, either small molecules or polymers. Their electrical transport properties are fundamentally distinct from those of inorganic semiconductors. Organic semiconductor thin films are amorphous or polycrystalline and their electronic structures consist of a distribution of localized electronic states with different energies. The localized sites are either individual molecules or isolated conjugated segments of a polymer chain. Electrical transport results from carrier hopping between neighboring sites. At room temperature, equilibration between neighboring sites of different energy is fast enough that carrier transport can be described using a mobility picture. Hopping transport in these disordered systems leads to a mobility that can depend strongly on both the electric field and carrier density. This article presents experimental measurements and theoretical analysis of the electrical transport properties of representative organic semiconductors.
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12

Chabinyc, Michael L., Leslie H. Jimison, Jonathan Rivnay, and Alberto Salleo. "Connecting Electrical and Molecular Properties of Semiconducting Polymers for Thin-Film Transistors." MRS Bulletin 33, no. 7 (2008): 683–89. http://dx.doi.org/10.1557/mrs2008.140.

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AbstractAn overview of recent work on the connection between electrical and molecular properties of semiconducting polymers for thin-film transistors (TFTs) is presented. A description of the molecular packing and microstructure of amorphous to semicrystalline semiconducting polymers is presented. The features of basic models for electrical transport in TFTs are discussed. These studies indicate that defect states and traps are as important as ordered domains for understanding transport in semiconducting polymers. Advanced methods, such as electric force microscopy, useful for measuring the characteristics of defect states and charge traps, are briefly reviewed.
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13

Romaniv, I., B. Kuzhel, L. Romaka, and V. Pavlyuk. "Electrical Transport Properties of R3Ag4Sn4 (R = Gd, Tb, Dy, Ho) Compounds." Фізика і хімія твердого тіла 19, no. 4 (2018): 316–21. http://dx.doi.org/10.15330/pcss.19.4.316-321.

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Electrical transport properties of the R3Ag4Sn4 (R = Gd, Tb, Dy, Ho) intermetallics crystallized in the orthorhombic Gd3Cu4Ge4 structure type (space group Immm) were studied in the temperature interval 11 – 300 K. Measurements of the temperature dependencies of electrical resistivity (r(T)) showed that all the studied compounds are characterized by metallic type of conductivity. The slope change of the resistivity at low temperature part of r(T) dependencies for Gd3Ag4Sn4, Tb3Ag4Sn4 and Dy3Ag4Sn4 compounds is connected with their magnetic ordering. Change of the resistivity caused by magnetic ordering was not observed for the Ho3Ag4Sn4 compound in the studied temperature interval. Relation between magnetic and electric properties of the investigated R3Ag4Sn4 compounds was analyzed.
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14

Pagano, Sergio, Nadia Martucciello, Emanuele Enrico, Eugenio Monticone, Kazumasa Iida, and Carlo Barone. "Iron-Based Superconducting Nanowires: Electric Transport and Voltage-Noise Properties." Nanomaterials 10, no. 5 (2020): 862. http://dx.doi.org/10.3390/nano10050862.

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The discovery of iron-based superconductors paved the way for advanced possible applications, mostly in high magnetic fields, but also in electronics. Among superconductive devices, nanowire detectors have raised a large interest in recent years, due to their ability to detect a single photon in the visible and infrared (IR) spectral region. Although not yet optimal for single-photon detection, iron-based superconducting nanowire detectors would bring clear advantages due to their high operating temperature, also possibly profiting of other peculiar material properties. However, there are several challenges yet to be overcome, regarding mainly: fabrication of ultra-thin films, appropriate passivation techniques, optimization of nano-patterning, and high-quality electrical contacts. Test nanowire structures, made by ultra-thin films of Co-doped BaFe2As2, have been fabricated and characterized in their transport and intrinsic noise properties. The results on the realized nanostructures show good properties in terms of material resistivity and critical current. Details on the fabrication and low temperature characterization of the realized nanodevices are presented, together with a study of possible degradation phenomena induced by ageing effects.
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15

Ambrosone, G., U. Coscia, A. Cassinese, et al. "Low temperature electric transport properties in hydrogenated microcrystalline silicon films." Thin Solid Films 515, no. 19 (2007): 7629–33. http://dx.doi.org/10.1016/j.tsf.2006.11.180.

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16

Stadnyk, Yu, Yu Gorelenko, A. Tkachuk, A. Goryn, V. Davydov, and O. Bodak. "Electric transport and magnetic properties of TiCo1−xNixSb solid solution." Journal of Alloys and Compounds 329, no. 1-2 (2001): 37–41. http://dx.doi.org/10.1016/s0925-8388(01)01618-8.

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17

Li, Shu-Shen, and Jian-Bai Xia. "Transport properties through quantum dot in a vertical electric field." Physica E: Low-dimensional Systems and Nanostructures 17 (April 2003): 147–48. http://dx.doi.org/10.1016/s1386-9477(02)00716-6.

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18

Singh, Veer, Sulekha Batra, G. P. Sachdev, and Indu Bhushan Sharma. "Synthesis, Structure and Electric Transport Properties of Sr3WCoO7 and Sr3WNiO7." Materials Today: Proceedings 15 (2019): 575–80. http://dx.doi.org/10.1016/j.matpr.2019.04.123.

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19

Wang, X. J., J. F. Tian, T. Z. Yang, et al. "Single Crystalline Boron Nanocones: Electric Transport and Field Emission Properties." Advanced Materials 19, no. 24 (2007): 4480–85. http://dx.doi.org/10.1002/adma.200701336.

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20

Riva, G., and G. Airoldi. "Electric Transport Properties of NiTi Thin Wires Under Applied Stress." Journal de Physique IV 05, no. C8 (1995): C8–623—C8–628. http://dx.doi.org/10.1051/jp4/199558623.

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21

Qiu-Hong, Li, and Wang Tai-Hong. "Improved Electric Transport Properties of a Multi-wall carbon Nanotube." Chinese Physics Letters 20, no. 8 (2003): 1333–35. http://dx.doi.org/10.1088/0256-307x/20/8/344.

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22

Sedmidubský, D., E. Pollert, J. Hejtmánek та P. Vašek. "Electric transport properties of Bi2−xSr2−yCu1O6+δ ( solid solutions". Physica C: Superconductivity 232, № 1-2 (1994): 104–10. http://dx.doi.org/10.1016/0921-4534(94)90300-x.

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23

Skornia, Paweł, Jerzy Goraus, Marcin Fijałkowski, and Andrzej Ślebarski. "Electronic structure, magnetic, electric transport, and thermal properties of Ce5PdGe2." Journal of Alloys and Compounds 724 (November 2017): 222–28. http://dx.doi.org/10.1016/j.jallcom.2017.06.304.

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24

Ammar, M. H., M. M. El-hady, T. M. Salama, and A. A. Bahgat. "Reassess study of high temperature electric transport properties of PbTiO3." Journal of Alloys and Compounds 770 (January 2019): 308–19. http://dx.doi.org/10.1016/j.jallcom.2018.08.113.

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25

Kim, Sang-il, and Hyun-Sik Kim. "Calculated Electric Transport Properties of Thermoelectric Semiconductors Under Different Carrier Scattering Mechanisms." Korean Journal of Metals and Materials 59, no. 2 (2021): 127–34. http://dx.doi.org/10.3365/kjmm.2021.59.2.127.

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The widespread application of thermoelectric devices in cooling and waste heat recovery systems will be achieved when materials achieve high thermoelectric performance. However, improving thermoelectric performance is not straightforward because the Seebeck coefficient and electrical conductivity of the materials have opposite trends with varying carrier concentration. Here, we demonstrate that carrier scattering mechanism engineering can improve the power factor, which is the Seebeck coefficient squared multiplied by electrical conductivity, by significantly improving the electrical conductivity with a decreased Seebeck coefficient. The effect of engineering the carrier scattering mechanism was evaluated by comparing the band parameters (density-of-states effective mass, non-degenerate mobility) of Te-doped and Te, transition metal co-doped <i>n</i>-type Mg2Sb3 fitted via the single parabolic band model under different carrier scattering mechanisms. Previously, it was reported that co-doping transition metal with Te only changed the carrier scattering mechanism from ionized impurity scattering to mixed scattering between ionized impurities and acoustic phonons, compared to Te-doped samples. The approximately three times enhancement in the power factor of Te, transition metal co-doped samples reported in the literature have all been attributed to a change in the scattering mechanism. However, here it is demonstrated that Te, transition metal co-doping also increased the density-of-states effective mass. Here, the impact of the scattering mechanism change on the electric transport properties of <i>n</i>-type Mg2Sb3 without an effective mass increase was studied. Even without the effective mass increase, carrier scattering mechanism engineering improved the power factor, and its effect was maximized by appropriate carrier concentration tuning.
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26

Högblom, Olle, and Ronnie Andersson. "Multiphysics CFD Simulation for Design and Analysis of Thermoelectric Power Generation." Energies 13, no. 17 (2020): 4344. http://dx.doi.org/10.3390/en13174344.

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The multiphysics simulation methodology presented in this paper permits extension of computational fluid dynamics (CFD) simulations to account for electric power generation and its effect on the energy transport, the Seebeck voltage, the electrical currents in thermoelectric systems. The energy transport through Fourier, Peltier, Thomson and Joule mechanisms as a function of temperature and electrical current, and the electrical connection between thermoelectric modules, is modeled using subgrid CFD models which make the approach computational efficient and generic. This also provides a solution to the scale separation problem that arise in CFD analysis of thermoelectric heat exchangers and allows the thermoelectric models to be fully coupled with the energy transport in the CFD analysis. Model validation includes measurement of the relevant fluid dynamic properties (pressure and temperature distribution) and electric properties (current and voltage) for a turbulent flow inside a thermoelectric heat exchanger designed for automotive applications. Predictions of pressure and temperature drop in the system are accurate and the error in predicted current and voltage is less than 1.5% at all exhaust gas flow rates and temperatures studied which is considered very good. Simulation results confirm high computational efficiency and stable simulations with low increase in computational time compared to standard CFD heat-transfer simulations. Analysis of the results also reveals that even at the lowest heat transfer rate studied it is required to use a full two way coupling in the energy transport to accurately predict the electric power generation.
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27

Lowke, J. J., and J. C. Quartel. "Use of Transport Coefficients to Calculate Properties of Electrode Sheaths of Electric Arcs." Australian Journal of Physics 50, no. 3 (1997): 539. http://dx.doi.org/10.1071/p96089.

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Particle conservation equations for electrons and positive ions, together with Poisson"s equation to account for space-charge effects on the electric field, have been solved for the electrode sheath regions of electric arcs. For thermionic cathodes and the anode, we find that the ambipolar diffusion approximation is generally valid. At the surface of the anode we find that there is generally a small retarding electric field. For non-thermionic cathodes and no ionisation due to the electric field in the sheath, we calculate unrealistically high sheath voltages and even then, find that the electric fields at the cathode surface are insufficient for field emission. It is suggested that photoionisation in the region close to the cathode may be a principal source of electrons for non-thermionic cathodes.
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28

Tinh, Bui Duc, and Nguyen Quang Hoc. "Transport coefficients and Nernst signal of type-II superconductors under magnetic field." International Journal of Modern Physics B 30, no. 03 (2016): 1550267. http://dx.doi.org/10.1142/s0217979215502677.

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In this paper, we have studied the transport properties in two-dimensional superconductors in the frame of the Langevin approach to the time dependent Ginzburg–Landau equation. The electrical and thermoelectric conductivity, resulting from thermal fluctuations of the superconducting order parameter, are computed in the self-consistent Gaussian approximation for an arbitrarily strong electric field and a magnetic field. The Nernst signal, describing the Nernst effect in type-II superconductor under a magnetic field, is also calculated in linear response limit. We obtain analytical expressions for the electrical conductivity, the thermoelectric conductivity and the Nernst signal summing all Landau levels without need to cutoff higher Landau levels to treat an arbitrary magnetic field. Our results indicate that the electrical and thermoelectric conductivity are suppressed in high electric fields and the Nernst signal is in good agreement with experimental data on [Formula: see text].
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29

Tochaei, Amir Akbari. "High field properties of electron transport in bulk zincblende In0.53Ga0.47As and In0.53Ga0.47Sb." Modern Physics Letters B 29, no. 10 (2015): 1550038. http://dx.doi.org/10.1142/s0217984915500384.

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In this paper, electron transport properties in bulk zincblende In 0.53 Ga 0.47 As and In 0.53 Ga 0.47 Sb in high electric field are presented by using an ensemble Monte Carlo method. The steady state electron transport and transient situation in these two ternary semiconductors are reviewed and compared together by the three-valley model of conduction band. The results show that In 0.53 Ga 0.47 Sb has lower threshold field and higher drift velocity peak in comparison with In 0.53 Ga 0.47 As . Moreover, In 0.53 Ga 0.47 Sb has higher overshoot velocity and shorter time response in high electric field in comparison with In 0.53 Ga 0.47 As . However, overshoot relaxation time is equal for them in two applied electric fields.
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30

Sergeyev, D., N. Zhanturina, L. Myasnikova, A. I. Popov, A. Duisenova, and A. Istlyaup. "Computer Simulation of the Electric Transport Properties of the FeSe Monolayer." Latvian Journal of Physics and Technical Sciences 57, no. 6 (2020): 3–11. http://dx.doi.org/10.2478/lpts-2020-0029.

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AbstractThe paper deals with the model research of electric transport characteristics of stressed and non-stressed FeSe monolayers. Transmission spectra, current-voltage characteristic (CVC) and differential conductivity spectra of two-dimensional FeSe nanostructure have been calculated within the framework of the density functional theory and non-equilibrium Green’s functions (DFT + NEGF). It has been shown that the electrophysical properties depend on the geometry of the sample, the substrate, and the lattice constant. On CVC of non-stressed sample in the range from −1.2 V to −1 and from 1.2 V to 1.4 V, a region of negative differential resistance (NDR) has been observed. NDR is at both signs of the applied voltage due to the symmetry of the nanostructure. d2I/dV2 is used to determine the nature of the electron-phonon interaction and the features of quasiparticle tunnelling in stressed and non-stressed samples. The results obtained can be useful for calculating new elements of 2D nanoelectronics.
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31

Sato, Yohei, Kiyomasa Doi, Yumiko Katayama, and Kazunori Ueno. "Electrolyte dependence of transport properties of SrTiO3 electric double layer transistors." Japanese Journal of Applied Physics 56, no. 5 (2017): 051101. http://dx.doi.org/10.7567/jjap.56.051101.

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32

Sharma, Indu Bhushan, S. K. Magotra, D. Singh, S. Batra, and K. D. S. Mudher. "Synthesis, structure, electric transport and magnetic properties of Sr2LaMnFeO7 and Sr2LaMn1.5Fe0.5O7." Journal of Alloys and Compounds 291, no. 1-2 (1999): 16–20. http://dx.doi.org/10.1016/s0925-8388(99)00257-1.

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33

Pattanayak, R., S. Panigrahi, T. Dash, R. Muduli, and D. Behera. "Electric transport properties study of bulk BaFe12O19 by complex impedance spectroscopy." Physica B: Condensed Matter 474 (October 2015): 57–63. http://dx.doi.org/10.1016/j.physb.2015.06.006.

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34

Matsumoto, Yuji, Yoshinori Haga, Naoyuki Tateiwa, Etsuji Yamamoto, and Zachary Fisk. "Crystallographic, Magnetic, Thermal, and Electric Transport Properties in UPtIn Single Crystal." Journal of the Physical Society of Japan 87, no. 2 (2018): 024706. http://dx.doi.org/10.7566/jpsj.87.024706.

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35

Batkova, M., I. Batko, E. Bauer, R. T. Khan, V. B. Filipov, and E. S. Konovalova. "Effect of pressure on the electric transport properties of carbon-doped." Solid State Communications 150, no. 13-14 (2010): 652–54. http://dx.doi.org/10.1016/j.ssc.2009.12.025.

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36

Siegal, M. P., J. Podkaminer, A. L. Lima-Sharma, P. A. Sharma, and D. L. Medlin. "Correlating thermoelectric (Bi,Sb)2Te3 film electric transport properties with microstructure." Journal of Applied Physics 125, no. 17 (2019): 175107. http://dx.doi.org/10.1063/1.5089647.

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37

Bondarenko, S., and K. Komoshvili. "Transverse transport properties of a charged drop in an electric field." International Journal of Modern Physics E 24, no. 05 (2015): 1550034. http://dx.doi.org/10.1142/s0218301315500342.

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Transport properties of a charged droplet of weakly interacting particles in transverse electric field are investigated. Nonequilibrium, time-dependent distribution function which describes a process of the droplet transverse evolution with constant entropy in the field is calculated. With the help of this distribution function, shear viscosity coefficients in the transverse plane are calculated as well. They are found to be dependent on the ratio of the potential energy of the droplet in the electric field to the kinetic energy of the droplet; for weakly interacting particles, this parameter is small. Additionally, these coefficients are time-dependent and change during the hydrodynamical state of the droplet's expansion. Applicability of the results to the description of initial states of quark–gluon plasma (QGP) obtained in high-energy interactions of nuclei is also discussed.
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38

Sharma, Himanshu, Ashwin Tulapurkar, and C. V. Tomy. "Electric field controlled magnetization and transport properties of La0.7Ca0.3MnO3 ultrathin film." Materials Chemistry and Physics 186 (January 2017): 523–27. http://dx.doi.org/10.1016/j.matchemphys.2016.11.029.

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39

Łuszczek, M. "Structure and electric transport properties of Ca-doped bulk PrBa2Cu3O7−δ". Physica C: Superconductivity 355, № 1-2 (2001): 15–22. http://dx.doi.org/10.1016/s0921-4534(01)00025-9.

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40

Ermakova, L. E., M. P. Sidorova, and N. A. Zhura. "Electric transport properties of ultra-and nanoporous glasses in electrolyte solutions." Colloid Journal 69, no. 5 (2007): 571–78. http://dx.doi.org/10.1134/s1061933x07050067.

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41

Miyazaki, Takahumi, Retsuo Kawakami, and Nobuaki Ikuta. "Variation of Ion Transport Properties under Electric Field with Mass Ratios." Journal of the Physical Society of Japan 67, no. 4 (1998): 1260–72. http://dx.doi.org/10.1143/jpsj.67.1260.

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42

Miyazaki, Takahumi, Retsuo Kawakami, and Nobuaki Ikuta. "Variation of Ion Transport Properties under Electric Field with Mass Ratios." Journal of the Physical Society of Japan 67, no. 8 (1998): 2964. http://dx.doi.org/10.1143/jpsj.67.2964.

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43

Ren, R., Xuan Li, Weiren Wang, Zhongxia Zhao, and Lin Liu. "Electric transport and field-induced properties in ZnO/La0.4Gd0.1Sr0.5CoO3/Si heterostructure." Journal of Applied Physics 114, no. 13 (2013): 133705. http://dx.doi.org/10.1063/1.4823777.

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44

Li, Bowen, Lin Zhu, Chunyan Wu, Hanyu Cheng, and Kailun Yao. "The transport properties of Cl-decorated arsenene controlled by electric field." Electronic Structure 2, no. 4 (2020): 045001. http://dx.doi.org/10.1088/2516-1075/abbd2a.

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45

Li, T. S., and M. F. Lin. "Transport properties of finite carbon nanotubes under electric and magnetic fields." Journal of Physics: Condensed Matter 18, no. 47 (2006): 10693–703. http://dx.doi.org/10.1088/0953-8984/18/47/014.

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46

Xiao, Yixin, Xin Zhang, Rongrong Li, and Jiuxing Zhang. "Rapid Synthesis and Electric Transport Properties of (Ca1−xBax)12Al14O33 Electrides." Journal of Electronic Materials 49, no. 4 (2020): 2471–78. http://dx.doi.org/10.1007/s11664-020-07947-9.

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47

Kawahara, T., T. Suzuki, E. Komai, K. Nakazawa, T. Terashima, and Y. Bando. "Electric-field effect on transport and superconducting properties of YBa2Cu3O7−x." Physica C: Superconductivity 266, no. 1-2 (1996): 149–56. http://dx.doi.org/10.1016/0921-4534(96)00308-5.

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48

Sandu, Viorel, Stelian Popa, Ion Ivan, et al. "Fabrication and Transport Properties of Manganite-Polyacrylamide-Based Composites." Journal of Nanomaterials 2009 (2009): 1–5. http://dx.doi.org/10.1155/2009/429430.

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We present the fabrication and transport properties of a series of composites made ofLa2/3Sr1/3MnO3and acrylamide-based copolymers. The most important result is the very narrow transition, of only 27 K, displayed by the peak that appears around the metal-insulator transition of the composites made with poly(acrylamide-vinylacetate). Although the amount of polymer is rather low, different copolymers change drastically the electric transport characteristics.
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49

Racolta, D., and C. Micu. "The Aharonov-Bohm Effect and Transport Properties in Graphene Nanostructures." Annals of West University of Timisoara - Physics 57, no. 1 (2013): 52–60. http://dx.doi.org/10.1515/awutp-2015-0106.

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Abstract In this paper we discuss interplays between the Aharonov-Bohm effect and the transport properties in mesoscopic ring structures based on graphene. The interlayer interaction leads to a change of the electronic structure of bilayer graphene ring such that the electronic energy dispersion law exhibits a gap, either by doping one of the layers or by the application of an external perpendicular electric field. Gap adjustments can be done by varying the external electric field, which provides the possibility of obtaining mesoscopic devices based on the electronic properties of bilayer graphene. This opens the way to controllable manipulations of phase-coherent mesoscopic phenomena, as well as to Aharonov-Bohm oscillations depending on the height of the potential step and on the radius of the ring. For this purpose one resorts to a tight-binding model such as used to the description of conductance.
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50

Assefa, Gezahegn. "Electric Field Controlled Itinerant Carrier Spin Polarization in Ferromagnetic Semiconductors." Advances in Condensed Matter Physics 2021 (July 12, 2021): 1–5. http://dx.doi.org/10.1155/2021/6663876.

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Electric field control of magnetic properties has been achieved across a number of different material systems. In diluted magnetic semiconductors (DMSs), ferromagnetic metals, multiferroics, etc., electrical manipulation of magnetism has been observed. Here, we study the effect of an electric field on the carrier spin polarization in DMSs ( GaAsMn ); in particular, emphasis is given to spin-dependent transport phenomena. In our system, the interaction between the carriers and the localized spins in the presence of electric field is taken as the main interaction. Our results show that the electric field plays a major role on the spin polarization of carriers in the system. This is important for spintronics application.
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